JPS59226177A - Thin film forming device - Google Patents

Abstract

PURPOSE:To decrease the variance in the thickness of the film on a base plate by disposing two sheets of shutters between a base plate to be formed thereon with the thin film and a film forming source in such a way as to be superposed in front of the base plate and moving simultaneously two sheets of the shutters in different directions. CONSTITUTION:Two sheets of shutters 13 and 14 are disposed between a base plate 7 on which a thin film is to be formed and a film forming source in such a way as to be superposed in front of the plate 7 and are connected to a shutter opening/closing mechanism 15. The opening and closing of the shutters 13, 14 are accomplished by rotating the driving shaft 19 of a revolution transmitting machine 18 via belt 17 and turning the shutter 13 attached to an arm 26. Gears 24, 25 are rotated at the same time to rotate a driven shaft 20, by which the shutter 14 attached to an arm 27 is turned in the direction opposite to the rotating direction of the shutter 13. The time when the plate 7 is exposed to the film forming material scattering to said plate by the opening and closing of the shutters 13, 14 is thus made identical and the thickness of the film formed on the plate 7 is made practically identical.

Description

[Detailed Description of the Invention] [Field of Application of the Invention] The present invention relates to a thin film forming apparatus for forming thin film elements such as ICs and facsimiles, and particularly to a method for reducing film thickness variations of a thin film forming substrate (hereinafter referred to as a substrate). The present invention relates to a thin film forming apparatus suitable for this purpose.

[Background of the invention]

In a conventional thin film forming apparatus, one shutter is moved to block the deposition material from adhering to the substrate, so the exposure time inside the substrate is different at both ends in the direction of shutter movement, and as a result, the substrate There was a drawback that the thickness of the thin film formed was large.

This point will be explained in more detail with reference to the drawings.

FIG. 1 shows an outline of a sputtering apparatus as an example of a thin film forming apparatus, and FIG. 2 shows a shutter of the sputtering apparatus and its opening/closing operation.

Sputtering generates a glow discharge in a low-pressure (10-1oPa) gas atmosphere (usually Ar gas is used), and the film-forming material (target) placed on the cathode is repelled by ion bombardment, which converts it into a film-forming material. This is a technique to form a thin film by depositing it on substrates placed opposite each other.

In the sputtering apparatus shown in FIG. 1, a vacuum chamber 1 is evacuated to a high vacuum (=10 Pa or less) by a vacuum pump 2, and then Ar gas 12 is introduced to a predetermined pressure (10-1 to 10 Pa) by a gas introduction system 3. do. A high voltage is then applied between the sputter electrode 4 and the anode 6 to generate glow discharge. A substrate 7 on which a thin film is to be formed is held by a substrate holder 8 and placed stationary opposite the sputter electrode 4. A shutter 9 is provided between the substrate 7 and the sputter electrode 4, and the substrate 7 The film-forming material 5 is shielded so that it does not fly away.Furthermore, the shutter opening/closing mechanism 10
is opened for a predetermined period of time, the substrate 7 is exposed to the flying film-forming material, and film-forming is performed.

By the way, the planar magnetron type sputtering electrode that is widely used today enables high-speed film formation, and a film formation rate of 1.4 μm/min (however, the film forming material is Al) has been obtained.

In the conventional thin film forming apparatus, one shutter 9 is opened and closed as shown in FIG. 2, and the shutter 9 moves in the direction of arrow 11, so the beginning of opening of the shutter 9 is indicated by the broken line in FIG. At the position shown, part A in the substrate Z is exposed earlier than part B. Further, since the shutter 9 closes later in the A section than in the B section, the exposure time of the -A section is longer than that of the B section. As a result, the film thickness in part A becomes thicker than in part B, resulting in film thickness variations. As described above, the conventional thin film forming apparatus has the drawback that the opening and closing of the shutter 9 causes variations in the film thickness within the substrate 7 because the shutter 9 is closed and opened in different directions. For example, the deposition rate is 1
．． When forming a film with a thickness of 1 μm at a rate of 4 μm/min, in order to reduce the film thickness variation within the substrate 7 (substrate diameter φ150) due to the opening and closing of the shutter 9 to ±1 line or less, the opening and closing of the shutter 9 must be It must be less than 0.4 seconds. However, when the shutter 9 is moved at such a high speed, vibrations occur when the shutter tries to stop, and the film attached to the shutter 9 peels off, causing foreign matter to drop onto the board.
Therefore, in practice, it is not possible to move the shutter 9 at high speed as described above.

[Purpose of the invention]

SUMMARY OF THE INVENTION An object of the present invention is to provide a thin film forming apparatus that can open and close a shutter in the normal shutter opening and closing time and can reduce variations in film thickness of a substrate.

[Summary of the invention]

The present invention provides that two shutters are disposed between a substrate and a film forming source so that polymerization can occur in front of the substrate;
By connecting the shutters to a shutter opening/closing mechanism that moves the shutters simultaneously and in different directions, even if the shutters are opened and closed within the normal shutter opening/closing time (1 to 2 seconds each), the film thickness of the substrate will vary. This is a thin film forming device that can be made smaller.

[Embodiments of the invention]

An embodiment of the present invention will be described below with reference to FIG. 3 and FIG. 4J.

Two shutters 13.14 are arranged between the substrate 7 on which a thin film is to be formed and the film formation source so as to be able to overlap in front of the substrate 7, and the two shutters 13.14 have a shutter opening/closing mechanism. 15.

The substrate 7 is held by a substrate holder 8 and placed opposite to the film forming source.

In the sputtering apparatus, the film forming source is configured to include a sputter electrode, a film forming hair material, and an anode.
It is omitted in the figure and FIG.

As shown in FIG. 4, the shutter opening/closing mechanism 15 includes a rotation introducing machine 18 which is drive-connected to a motor 16 through a belt 17 to a motor 1 installed outside the vacuum container 1, and a vacuum is supplied from the rotation introduction machine 18. A drive shaft 19 inserted into the interior of the vacuum container 1, a passive shaft 20 provided parallel to the drive shaft 19 inside the vacuum container 1, and a shaft mounted on the drive shaft 19 and the passive shaft 20. It includes two gears 2425 meshed with each other, and arms 26 and 27 connected to the driving shaft 19 and the driven shaft 20, respectively. Said passive shaft 2
0 is supported by bearings 22 and 23 provided in a bearing box 21 fixed inside the vacuum container 1. The drive shaft 1
9 and the passive shaft 20 are gears 24, 251 . The shutters 13, 14 are attached to the arms 26, 27, respectively.

In the thin film forming apparatus of the above embodiment, when the drive shaft 19 of the shutter opening/closing mechanism 15 is rotated in the direction of the arrow C in FIG. 3 from the state where the shutter 1614 is open, the arm 2
6, the shutter 16 moves in the direction of the arrow e, and at the same time, the driven shaft 20 rotates in the direction of the arrow e' through the gear 24.25, and the shutter 14 moves in the direction of the arrow e through the arm 27.
’ direction. As a result, 2
The two shutters 13 and 14 overlap as shown by the two-dot chain line in FIG. ) to the third drive @19 of the shutter opening/closing mechanism 15.
When rotated in the direction of the arrow d in the figure, the shutter 16 moves in the direction of the arrow f through the arm 26, the driven 711120 rotates in the direction of the arrow d' through the gears 24.25, and the shutter 16 moves in the direction of the arrow d' through the arm 27'f;c. 14 moves in the direction of arrow f' at the same time as the shutter 13, and the shutters 13 and 14 open so that the film-forming material jumps onto the substrate 7.

In this way, since the two shutters 13 and 14 are opened and closed simultaneously and moved in different directions, the shutters 13 and 14 on the substrate 7 are opened and closed simultaneously. ．． It is possible to make the film thicknesses of the N part and the N part in the moving direction of the shutter 14 almost the same, so that the film thickness variation can be reduced even if the shutter 15.14 is opened and closed during the normal shutter opening and closing time. Can be done.

Note that the other functions of the structure 9 of this embodiment are the same as those shown in FIG. 1 above.

In addition, in the present invention, the specific structure of the shutter opening/closing mechanism 15 is not limited to the illustrated embodiment;
Any structure may be sufficient as long as it can move both at the same time and in different directions.

〔Effect of the invention〕

According to the present invention described above, between the substrate and the film forming source,
By arranging two shutters so that they can overlap in front of the board and connecting the two shutters to a shutter opening/closing mechanism that can move the two shutters simultaneously and in opposite directions, both ends of the board in the direction of movement of the shutters are Since the V thickness of the film can be made the same, variations in film thickness can be reduced even if the shutter is opened and closed at a normal shutter opening/closing time.

[Brief explanation of drawings]

FIG. 1 is a longitudinal sectional view schematically showing a conventional sputtering apparatus, FIG. 2 is a front view showing opening and closing of the shutter of the sputtering apparatus shown in FIG. 1, and FIGS. 6 and 4 are an embodiment of the present invention. FIG. 3 is a front view of the main parts of the shutter and the shutter opening/closing mechanism, and FIG. 4 is a longitudinal sectional side view of the same. DESCRIPTION OF SYMBOLS 1... Makabe container 4... Sputtering electrode 5... Film forming material (target) which constitutes a film forming source 6... Anode 7... Substrate 13.14...
・Shutter 15...Shutter opening/closing mechanism 16...
Motor 18...Rotation introduction machine 19...Drive shaft 20...Passive shaft 24.25...Gear
26.27...Arm 1 figure 2 figure de''50

Claims (1)

[Claims] 112 shutters are arranged between a thin film forming substrate and a film forming source so that they can overlap in front of the thin film forming substrate, and a shutter opening/closing mechanism moves the two shutters simultaneously and in different directions. A thin film forming apparatus characterized by being connected to.