JPS6274072A - Thin film forming device - Google Patents

Abstract

PURPOSE:To form multi-layered thin films having uniform film quality by disposing a shutter which is divided and is turned oppositely from each other between plural substrates on a substrate holder which is rotationally driven and targets which are disposed to face the substrates. CONSTITUTION:Two sets of cathode electrodes 2 are provided in a vacuum vessel 1 of a thin film forming device and the targets 3, 4 are disposed thereon. The plural substrates 6 are attached to the rotating substrate holder 5 above the targets 3, 4 so as to face the targets. Gas is introduced into the above- mentioned vacuum vessel 1 from a gas introducing hole 7 and is converted to plasma 20 by which the targets 3, 4 are sputtered and the thin films are formed on the substrates 6. The shutter for controlling the spattered and splashed particles 21 is provided between the targets 3, 4 and the substrates 6 of the above-mentioned device. The shutter is constituted of the shutter plates 9, 10 which are bisected approximately along the straight line connecting the centers of the substrates 6 and are respectively turned cooperatively oppositely from each other by means of a central shaft 13 and auxiliary shaft 14 engaged with gears 15, 16. The opening and closing speed of the shutter are thereby increased and the quality of the thin film is made uniform.

Description

Detailed Description of the Invention [Field of Application of the Invention] The present invention relates to a thin film forming apparatus such as a sputtering apparatus, a vapor deposition apparatus, and an ion beam application apparatus, and particularly relates to a shutter apparatus suitable for forming a uniform and homogeneous film. The present invention relates to a thin film forming apparatus.

[Background of the invention]

For example, it is well known that a sputtering device is used to form a thin film made of metal on the surface of an insulating substrate, and a shutter is used to scatter ions or particles of the metal onto the insulating substrate or to stop the scattering. Generally, equipment is provided.

The shutter mechanism in conventional sputtering equipment was developed in Japanese Patent Application Laid-open No. 1986-
As described in Japanese Patent No. 39819, a rotating shaft for opening/closing operation is provided at one end of a shirt plate disposed between a target and a substrate. By operating this rotating shaft from outside the container, the sputtered particles scattered from the target were shielded with a shutter plate to prevent them from flying onto the substrate, or opened to allow them to fly onto the substrate.

Further, as another example, there is one described in Japanese Patent Publication No. 60-15700. This device has a rotating operation shaft in the center of the shirt plate, and by rotating the position of an opening provided in a part of the shirt plate, sputtered particles can be made to fly or blocked. 6 On the other hand, with the recent development of thin film forming technology and the diversification of the films to be formed, it has become possible to select the method for sending two or more types of sputtering materials to the substrate from the shutter plate, or to open and close the shutter plate. There is now a need for a shutter mechanism that can operate at higher speeds and form a uniform film.

In contrast, with conventional methods, it is particularly difficult to vary the sputtering time from two types of targets and to open and close them at high speed, and it is difficult to maintain uniformity and homogeneity of the formed film. , was not given sufficient consideration.

That is, the conventional shutter mechanism is shown in FIG. 3(a).

As shown in (b), the disc shutter 18 is made of a circular plate and has an opening 19 at a location corresponding to the - board, and is capable of reciprocating rotation of 180''. As is clear from this, when the rotation angle is large, high-speed driving becomes difficult, and in the state shown in FIG. It has the disadvantage of being easily scattered.

[Purpose of the invention]

The present invention has been made based on such circumstances, and its purpose is to provide a thin film forming apparatus that can form a multilayer thin film having more uniform film quality.

[Summary of the invention]

In order to achieve such an object, the present invention aims to compensate for the difference in sputtering yield depending on the materials by changing the shutter opening time when a multilayer film is formed by sputtering or the like using two types of target materials. control and uniformity of film quality.
This is what we were trying to achieve through high-speed opening/closing drive.

Therefore, by making the rotating directions of the two-split rotary shirt plate different from each other, the rotation angle can be halved, and
By placing this rotating shaft between the two targets, the opening/closing speed is improved and the non-uniformity of the film quality during the opening/closing operation of the shirt shirt is also improved. That is, a substrate holder that holds at least two substrates and is rotationally driven, two targets that are arranged to face each of the substrates when the substrate holder comes to a fixed position, and a connection between the targets and the substrates. and a shutter disposed between the substrates, the shutter is divided into two parts approximately along a straight line connecting the centers of the respective substrates, and each of the divided shutters is provided with a drive vertically disposed between the respective substrates. The shafts are configured to interlock with each other and rotate in opposite directions when the shafts are driven.

[Embodiments of the invention]

FIG. 1 and FIGS. 2(a) and 2(b) are configuration diagrams showing one embodiment of a thin film forming apparatus according to the present invention.

First, in FIG. 1, in a vacuum chamber 1 there are arranged two sets of cathode electrodes 2 and 4 for generating sputtered particles, and a target 3.times.4 fixed to the top of these electrodes. Above the target, a substrate holder 5 and a plurality of substrates 6 are mounted on each target-facing surface of this holder, and are rotated within the vacuum vessel 1. The gas flowing through the gas introduction hole 7 provided in the vacuum container turns into plasma on the targets 3 and 4, collides with it, and performs sputtering, and the remaining gas is exhausted to the outside through the 2 exhaust holes 8. There is. At this time, shutter plates 9 and 10 are provided between the substrate 6 and the target 3.4 in order to control the amount of generated sputtered particles flying toward the substrate 6. The shutter plates 9 and 10 are fixed to the central shaft 13 and the sub-shaft ]-4 via fixing couplings 11 and 12, respectively. Further, the central shaft 13 receives a rotational force from the outside of the vacuum container and rotates, and the sub-shaft 14 rotates.

It is held by a metal fitting 17, and the rotational driving force of the central shaft 13 is transmitted through gears 15 and 16, so that it rotates in the opposite direction.

As shown in FIG. 2(a), the shutter plates 9 and 10 are connected to two substrates (each of which are arranged facing each other with the rotation axis of the substrate holder 5 in between) out of each substrate 6 on the surface of the substrate holder 5. When the targets 3 and 4 (opposed to each other) are specified, they are composed of two sets of shirt plates that are divided into two roughly along a line connecting the centers of the respective substrates. Each shirt plate 9,
10 has an overlapping region formed at its divided portion, and in the state shown in FIG. 2(a), both of the substrates are completely shuttered.

Each rotation R8S axis 11 of each shutter Fi9.10
．． 12 are arranged close to each other, the rotary drive shaft 12 is directly fixed to the shirt flap plate 10, and the rotary drive shaft 11 is loosely inserted into an arcuate hole 30 provided in the shirt flap plate 10 and directly fixed to the shirt flap plate 9. ing.

From the state shown in FIG. 2(a), when the rotational drive shaft 52 rotates to the left in the figure, the shirt shirt plate 10 also rotates in the direction shown in FIG. 2(b), rotating by 45''. It is designed to stop in this state.

At this time, since the rotary drive shaft '11 is interlocked with the rotary drive shaft 12 and rotates in the opposite direction, the shirt flap plate 9 is moved 45'' in the opposite direction to the shirt flap plate 10 as shown in FIG. 2(b).
It is designed to stop while rotating.

In this case, as is clear from FIG. 2(b).

The shutter for the substrate 3 will be released.

Since the thin film forming apparatus configured in this manner has a double shutter mechanism, the shutter can be opened by rotating the rotary drive shaft 1-2 by 45''.

Therefore, the shutter can be closed or opened at high speed. This allows the scattering of ions or particles to the substrate or their stopping instantaneously, so that the quality of the formed film can be made uniform.

Further, when ions or particles are being scattered to one substrate, the other substrate is completely stopped from scattering ions or particles by a shutter, and therefore, the minute ions or particles are not scattered to the other substrate. It is also possible to prevent scattering, and the quality of the formed film can be made uniform.

In the embodiment described above, as a result of arranging the rotary drive shafts 11 and 12 of each shutter 9 and 10 close to each other, one of the rotary drive shafts 11 is loosely inserted into the circular arc hole 30 provided in the shutter 9. This is what is being adopted. However, as shown in FIG. 4, by changing the shape of the shutter near its rotational drive shaft, a configuration different from that of the above embodiment can be adopted.

〔Effect of the invention〕

As is clear from the above explanation, according to the thin film forming apparatus according to the present invention, a multilayer thin film having more uniform film quality can be formed.

[Brief explanation of drawings]

FIG. 1 is a block diagram showing an embodiment of a thin film forming apparatus according to the present invention, and FIGS. 2(a) and 2(b) are block diagrams showing an embodiment of a shutter mechanism provided in the thin film forming apparatus. Figure 3 (
FIG. 4 is a block diagram showing another embodiment of the thin film forming apparatus according to the present invention. 1... Vacuum container, 2... Cathode electrode, 3, 4...
・Target, 5... Substrate holder, 6... Substrate,
7... Gas introduction hole, 8... Exhaust hole, 9, 10...
Shaft plate, 11.12...Coupling, 13.1
4... Rotation drive shaft, ]-7... Support metal fittings, 18...
・Disc shutter. 19... Opening, 20... Plasma, 21... Sputtered particles.

Claims (1)

[Claims] 1. A substrate holder that holds at least two substrates and is rotationally driven, two targets that are arranged to face each of the substrates when the substrate holder comes to a fixed position, and a connection between the targets and the substrates. and a shutter disposed between the substrates, the shutter is divided into two parts approximately along a straight line connecting the centers of the respective substrates, and each of the divided shutters is provided with a drive vertically disposed between the respective substrates. A thin film forming apparatus characterized in that the apparatus is configured to interlock with each other and rotate in opposite directions by driving shafts.