CN113718215B

CN113718215B - Magnetron sputtering equipment

Info

Publication number: CN113718215B
Application number: CN202110952656.3A
Authority: CN
Inventors: 匡友元
Original assignee: Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
Current assignee: Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority date: 2021-08-19
Filing date: 2021-08-19
Publication date: 2023-07-25
Anticipated expiration: 2041-08-19
Also published as: CN113718215A

Abstract

The application provides a magnetron sputtering device, which comprises a rotary target, a first rotating mechanism and a second rotating mechanism. The rotary target includes a first target and a second target. The first target and the second target are arranged in a first direction, and the first target is located at the end of the rotary target. The first rotating mechanism is connected to the first target. The second rotating mechanism is connected to the second target. According to the magnetron sputtering device, the sub-target at the end part of the rotary target and the sub-target in the middle of the rotary target are respectively connected to different rotating mechanisms, and in the sputtering process, the linear speed of the first target can be adjusted to be greater than that of the second target, so that the non-erosion area is reduced.

Description

Magnetron sputtering equipment

Technical Field

The application relates to the technical field of magnetron sputtering, in particular to a magnetron sputtering device.

Background

The magnetron sputtering technology is widely used in the manufacture of semiconductors, liquid Crystal Displays (LCDs), organic Light-emitting Diode (OLED) displays, and the like. Magnetron sputtering apparatuses generally include a target and a magnet disposed corresponding to the target. In the magnetron sputtering process, since the end of the target is far from the magnet, the intensity of the magnetic field applied to the end of the target is low, resulting in a low Plasma (Plasma) concentration that bombards the end of the target or no Plasma bombards the end of the target. These areas of lower plasma concentration or no plasma bombardment are referred to as Non-Erosion (Non-Erosion) areas. In the non-erosion area, the target is sputtered out, and because the kinetic energy is too small and the speed is too low, particles which cannot form a film on the target substrate can fall back onto the target. When the sputtering speed of the material on the target is smaller than the falling speed of the particles, the falling particles are accumulated on the surface of the target, so that the subsequent sputtering speed is influenced, and the film forming quality is influenced. On the other hand, there are also foreign matters in the apparatus, and when the sputtering speed of the material is smaller than the deposition speed of the foreign matters in the apparatus, the foreign matters are deposited on the target, which also affects the film forming quality. Therefore, the presence of non-eroded areas becomes one of the pain points of magnetron sputtering techniques.

Disclosure of Invention

The present application aims to provide a magnetron sputtering apparatus capable of reducing a non-erosion area.

The present application provides a magnetron sputtering apparatus, which includes:

the rotary target comprises a first target material and a second target material, wherein the first target material and the second target material are arranged in a first direction, and the first target material is positioned at the end part of the rotary target;

the first rotating mechanism is connected to the first target; and

and the second rotating mechanism is connected with the second target.

In one embodiment, the first rotating mechanism is configured to rotate the first target at a first linear velocity and the second rotating mechanism is configured to rotate the second target at a second linear velocity, the first linear velocity being greater than the second linear velocity.

In one embodiment, the magnetron sputtering apparatus further includes a sleeve, the sleeve includes a first sleeve and a second sleeve, the first sleeve and the second sleeve are arranged in the first direction, the first target is sleeved and fixed on the first sleeve, the first rotating mechanism is connected to the first sleeve, the second target is sleeved and fixed on the second sleeve, and the second rotating mechanism is connected to the second sleeve.

In one embodiment, the first rotating mechanism is disposed in the first sleeve, and the first rotating mechanism includes a first rotating shaft and a first transmission member, and the first transmission member is connected between the first rotating shaft and the first sleeve; the second rotating mechanism is arranged in the second sleeve, and comprises a second rotating shaft and a second transmission piece, and the second transmission piece is connected between the second rotating shaft and the second sleeve.

In one embodiment, the first transmission member includes a first gear and a second gear, the first gear is sleeved on the first rotating shaft, the second gear is disposed on the inner wall of the first sleeve and meshed with the outer periphery of the first gear, the second transmission member includes a third gear and a fourth gear, the third gear is sleeved on the second rotating shaft, the fourth gear is disposed on the inner wall of the second sleeve and meshed with the outer periphery of the third gear, and the diameter of the first gear is larger than that of the third gear.

In one embodiment, the first rotating mechanism is configured to rotate the first target at a first angular velocity, the second rotating mechanism is configured to rotate the second target at a second angular velocity, the first angular velocity is greater than the second angular velocity, and the diameter of the first target is the same as the diameter of the second target.

In one embodiment, the first rotating mechanism comprises a first rotating shaft and a first driving motor, one end of the first rotating shaft is connected to the first driving motor, the other end of the first rotating shaft is fixedly connected to the first target, the second rotating mechanism comprises a second rotating shaft and a second driving motor, one end of the second rotating shaft is connected to the second driving motor, and the other end of the second rotating shaft is fixedly connected to the second target.

In one embodiment, the magnetron sputtering apparatus further comprises a magnet assembly disposed in the cavity, the magnet assembly comprising a magnet and a motor, the magnet being fixedly connected to the motor, the motor being configured to move the magnet within the cavity.

In one embodiment, a guide rail is provided on the inner wall of the sleeve, the guide rail extends along the first direction, the magnet assembly is disposed in the guide rail, and the width of the guide rail is greater than that of the magnet.

In one embodiment, the rotary target further includes a third target and a third rotation mechanism, the third target and the second target are arranged in the first direction, the third target is located at the other end of the target, and the third rotation mechanism is connected to the third target.

According to the magnetron sputtering device, the sub-target material positioned at the end part of the rotary target and the sub-target material positioned in the middle of the rotary target are respectively connected to different rotating mechanisms, and the rotary target is driven to rotate by the different rotating mechanisms. In the sputtering process, the linear speed of the first target material is adjusted to be larger than that of the second target material, and the sputtering speed of particles is increased by increasing the rotating linear speed, so that the deposition of sputtered particles and foreign matters on the first target material is reduced, and the non-erosion area is reduced.

Drawings

In order to more clearly illustrate the technical solutions of the present application, the drawings that are needed in the description of the embodiments will be briefly introduced below, it being obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings can be obtained according to these drawings without inventive effort for a person skilled in the art.

Fig. 1 is a schematic structural view of a magnetron sputtering apparatus according to a first embodiment of the application.

Fig. 2 is a schematic structural view of a rotary target, a first rotating mechanism, a second rotating mechanism, a third rotating mechanism, and a magnet assembly of the magnetron sputtering apparatus of fig. 1.

FIG. 3 (a) is a schematic top view of the first target and the first rotation mechanism in the rotary target of FIG. 2; FIG. 3 (b) is a schematic top view of a second target and a second rotation mechanism in the rotary target of FIG. 2; fig. 3 (c) is a schematic top view of a third target and a third rotation mechanism in the rotary target of fig. 2.

Fig. 4 is a schematic structural view of a rotary target, a first rotating mechanism, a second rotating mechanism, and a third rotating mechanism of a magnetron sputtering apparatus according to a second embodiment of the present application.

FIG. 5 (a) is a schematic top view of the first target and the first rotation mechanism in the rotary target of FIG. 4; FIG. 5 (b) is a schematic top view of a second target and a second rotation mechanism in the rotary target of FIG. 4; fig. 5 (c) is a schematic top view of the third target and the third rotation mechanism in the rotary target of fig. 4.

Detailed Description

The technical solutions in the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It will be apparent that the described embodiments are only some, but not all, of the embodiments of the present application. All other embodiments, based on the embodiments herein, which are within the scope of the protection of the present application, will be within the skill of the art without undue effort.

In this application, unless expressly stated or limited otherwise, a first feature "above" or "below" a second feature may include both the first and second features directly, or may include both the first and second features not directly connected but contacted by additional features therebetween. Moreover, a first feature being "above," "over" and "on" a second feature includes the first feature being directly above and obliquely above the second feature, or simply indicating that the first feature is higher in level than the second feature. The first feature being "under", "below" and "beneath" the second feature includes the first feature being directly under and obliquely below the second feature, or simply means that the first feature is less level than the second feature.

Embodiments of the present invention will be described below with reference to the drawings, but the present invention is not limited to the embodiments.

The magnetron sputtering apparatus 100 of the present application can be used in physical vapor deposition processes of products such as semiconductors, LCDs, OLED displays, and the like.

Referring to fig. 1, 2 and 3 (a) to 3 (c), the magnetron sputtering apparatus 100 of the present application includes a vacuum processing chamber 10. The vacuum processing chamber 10 may be a box. An exhaust port 20 is provided at one end of the vacuum processing chamber 10 for exhausting air to form a vacuum environment. The other end of the vacuum processing chamber 10 is provided with an air inlet 30 for introducing a processing gas for generating plasma. The process gas may be exemplified by: argon (Ar) ₂ ) Or nitrogen (N) ₂ ) Etc. The process gas may be a single gas or a mixture of two or more gases. The air inlet 30 and the air outlet 20 may be provided at both ends of the vacuum processing chamber 10, respectively.

The magnetron sputtering apparatus 100 includes a stage 40, a rotary target 50, a first rotation mechanism 61, a second rotation mechanism 62, and a third rotation mechanism 62 provided in the vacuum processing chamber 10. The carrier 40 is disposed opposite to the rotary target 50. The first rotation mechanism 61, the second rotation mechanism 62, and the third rotation mechanism 62 are respectively connected to the rotary target 50.

The stage 40 is used for carrying a target substrate 200. The target substrate 200 shown in fig. 1 is a target to be sputtered to form a film by the magnetron sputtering apparatus 100, and is not a part of the magnetron sputtering apparatus 100. The carrier 40 is connected to an anode (not shown). The susceptor 40 is provided with a transport device (not shown) that can form a film while passing the target substrate 200 over the spin targets 50.

The material of the rotary target 50 may be a single element material such as molybdenum (Mo), aluminum (Al), tantalum (Ta), copper (Cu), titanium (Ti), or chromium (Cr), or a composite material composed of 2 or more elements such as GeSbTe or NiFe. The rotary target 50 is spaced apart from the susceptor 40, and a space for plasma bombardment is formed between the rotary target 50 and the susceptor 40.

Due to the size limitations of commercial targets, multiple sub-targets can be spliced to form the rotary target 50 when performing magnetron sputtering. The rotary target 50 includes a first target 51, a second target 52, and a third target 53. The first target 51, the second target 52, and the third target 53 are arranged in the first direction D1. The first target 51 is located at an end of the rotary target 50. The third target 53 is located at the other end of the rotary target 50. The second target 52 is located between the first target 51 and the third target 53. The rotary target 50 includes at least one section of a second target 52. That is, the rotary target 50 includes a first target 51 and a second target 52 at both end portions, and a second target 52 in the middle.

The first rotating mechanism 61 is connected to the first target 51, and the first rotating mechanism 61 is configured to drive the first target 51 to rotate at a first linear velocity V1. The second rotating mechanism 62 is connected to the second target 52, and the second rotating mechanism 62 is configured to drive the second target 52 to rotate at a second linear velocity V2. The third rotation mechanism 63 is connected to the third target 53, and the third rotation mechanism 63 is configured to drive the third target 53 to rotate at a third linear velocity V3. Wherein the first linear velocity V1 and the third linear velocity V3 are greater than the second linear velocity V2. The first linear velocity V1 and the third linear velocity V3 may be equal or unequal.

In the prior art, multiple sub-targets in the rotary target 50 are sleeved with each other to form a whole, and the diameters of the targets are the same. In the magnetron sputtering process, the multi-section sub-targets rotate at the same angular and linear speeds. However, the magnetic field at the sub-target located at the end of the rotary target 50 is weaker than the magnetic field at the sub-target located at the middle position of the rotary target 50, resulting in a sputtering speed lower than the falling speed of the sputtered particles or foreign matter, causing the sputtered particles or foreign matter to deposit at the sub-target located at the end of the rotary target 50, thereby forming a non-erosion region. In this application, the first target 51, the second target 52, and the third target 53 are driven to rotate by different rotation mechanisms. During the sputtering process of the rotary target 50, the linear velocity of the first target 51 and the third target 53 positioned at the end can be adjusted to be greater than the linear velocity of the second target 52 positioned in the middle, and by increasing the rotational linear velocity, the sputtering velocity of the particles can be increased, and the deposition of sputtered particles and foreign substances on the first target 51 and the third target 53 can be reduced, reducing the non-erosion area. It is understood that in other embodiments, the rotary target 50 may include only the first target 51 and the second target 52. At this time, the second target 52 includes not only the middle portion of the rotary target 50 but also the other end portion of the rotary target 50. The first target 51 is connected to a first rotating mechanism 61, and the second target 52 is connected to a second rotating mechanism 62. The first and second rotating structures respectively drive the first and second targets 51 and 52 to rotate, and the linear velocity V1 of the rotation of the first target 51 is greater than the linear velocity V1 of the rotation of the second target 52, thereby reducing the non-erosion region at one end of the rotating target 50.

Further, the magnetron sputtering apparatus 100 further includes a sleeve 70. The rotary target 50 is sleeved on the sleeve 70. For convenience of illustration, the internal structure of the sleeve 70 is omitted in fig. 2. The sleeve 70 includes a first sleeve 71, a second sleeve 72, and a third sleeve 73. The first sleeve 71, the second sleeve 72, and the third sleeve 73 are also arranged in the first direction D1. The first target 51 is sleeved and fixed on the first sleeve 71, and the first rotating mechanism 61 is connected to the first sleeve 71 and connected to the first target 51 through the first sleeve 71. The second target 52 is sleeved and fixed on the second sleeve 72, and the second rotating mechanism 62 is connected to the second sleeve 72 and connected to the second target 52 through the second sleeve 72. The third target 53 is sleeved and fixed on the third sleeve 73, and the third rotating mechanism 63 is connected to the third sleeve 73 and is connected to the third target 53 through the third sleeve 73.

Alternatively, in order to prevent mutual interference between the sub-targets rotating at different linear speeds, the first target 51, the second target 52, and the third target 53 may be disposed at intervals in the first direction D1. The first sleeve 71, the second sleeve 72, and the third sleeve 73 for disposing the first target 51, the second target 52, and the third target 53 are also disposed at intervals in the first direction D1.

In the present embodiment, the first rotation mechanism 61 is disposed in the first sleeve 71, and the first rotation mechanism 61 includes a first rotation shaft 611 and a first transmission member 612. The first transmission member 612 is connected between the first shaft 611 and the first sleeve 71. The second rotating mechanism 62 is disposed in the second sleeve 72, and the second rotating mechanism 62 includes a second rotating shaft 621 and a second transmission member 622. The second transmission member 622 is connected between the second shaft 621 and the second sleeve 72. The third rotating mechanism 63 is disposed in the third sleeve 73, and the third rotating mechanism 63 includes a third rotating shaft 631 and a third rotating member 632. The third rotating member 632 is connected between the third rotating shaft 631 and the third sleeve 73. The first shaft 611 and the second shaft 621 are connected to the third shaft 631. Further, the first rotation shaft 611, the second rotation shaft 621 and the third rotation shaft 631 are the same rotation shaft. It will be appreciated that the sputtering apparatus of the present application further comprises a drive motor (not shown). The driving motors can be respectively arranged at two ends of the target material, and the positions of the driving motors are not limited in the application. The first and third rotating shafts 611 and 631 may protrude from the ends of the rotary target 50, respectively, and are connected to a driving motor.

The first transmission 612 includes a first gear 6121 and a second gear 6122. The first gear 6121 is sleeved on the first rotating shaft 611, and the second gear 6122 is arranged on the inner wall of the first sleeve 71 and meshed with the outer periphery of the first gear 6121. The second transmission member 622 includes a third gear 6221 and a fourth gear 6222, the third gear 6221 is sleeved on the second rotating shaft 621, and the fourth gear 6222 is disposed on the inner wall of the second sleeve 72 and is meshed with the outer periphery of the third gear 6221. The third transmission member 632 includes a fifth gear 6321 and a sixth gear 6322, the fifth gear 6321 is sleeved on the third rotating shaft 631, and the sixth gear 6322 is disposed on the inner wall of the third sleeve 73 and engaged with the outer periphery of the fifth gear 6321. The diameter of the first gear 6121 and the diameter of the fifth gear 6321 are greater than the diameter of the third gear 6221.

In the present embodiment, the first to third rotating mechanisms 61 to 63 are connected to the same rotating shaft, and the angular velocity ω of the rotating shaft at the time of rotation is the same. But the diameters of the first gear 6121 and the fifth gear 6321 are larger than the diameter of the third gear 6221, the linear speed at which the first gear 6121 rotates and the linear speed at which the fifth gear 6321 rotates are larger than the linear speed of the third gear 6221, so that the linear speed at which the second gear 6122 meshed with the first gear 6121 and the sixth gear 6322 meshed with the fifth gear 6321 rotate is larger than the linear speed at which the fourth gear 6222 meshed with the third gear 6221, so that the linear speed V1 of the first target 51 fixedly connected with the second gear 6122 and the linear speed V3 of the third target 53 fixedly connected with the fifth gear 6321 are larger than the linear speed V2 of the second target 52 fixedly connected with the second gear 6122. By increasing the linear speed of sputtering of the sub-target, the deposition of sputtered particles and foreign matter on the target surface can be reduced, thereby reducing the non-erosion zone. In addition, according to the embodiment, the sub-target at the end part of the target and the sub-target in the middle of the target can be rotated at different linear speeds through the same rotating shaft, so that the structure is simple, and the cost is low.

Referring again to fig. 1, the magnetron sputtering apparatus 100 further includes a magnet assembly 80. The sleeve 70 has a cavity 70a therein. The magnet assembly 80 is disposed within the cavity 70a. The magnet assembly 80 includes a magnet 81 and a motor 82, the magnet 81 being fixedly connected to the motor 82. The motor 82 is disposed on a side of the magnet 81 remote from the sleeve 70. The motor 82 is configured to move the magnet 81 within the cavity 70a. Specifically, the motor 82 is capable of controlling movement of the magnet in the guide rail 74 in a first direction D1 and a second direction D2 perpendicular to the first direction D1. The inner wall of the sleeve 70 may be provided with a guide rail 74, the guide rail 74 extends along the first direction D1, the magnet assembly 80 is disposed in the guide rail 74, and the width of the guide rail 74 is greater than the width of the magnet 81, so that the magnet 81 can move in the guide rail 74. The width of the guide rail 74 and the width of the magnet 81 refer to widths perpendicular to the first direction D1. During sputtering, the motor 82 may be caused to move the magnet 81 in the guide rail 74 at a predetermined frequency and a predetermined path, thereby changing the magnetic field strength.

Referring to fig. 4, 5 (a) to 5 (c), the second embodiment of the present application is different from the first embodiment in that:

the first rotation mechanism 61 is configured to rotate the first target 51 at a first angular velocity ω1, the second rotation mechanism 62 is configured to rotate the second target 52 at a second angular velocity ω2, and the third rotation mechanism 63 is configured to rotate the third target 53 at a third angular velocity ω3, the first and third angular velocities ω1 and ω3 being greater than the second angular velocity ω2. The diameters of the first target 51, the second target 52, and the third target 53 are the same.

Specifically, the first rotation mechanism 61 includes a first rotation shaft 611 and a first drive motor 613. The first sleeve 71 has a first fixing portion 711 provided on an inner wall thereof. The first fixing portion 711 may be a planar plate body perpendicular to the length direction of the first sleeve 71. Since the magnet assembly 80 is also required to be disposed in the cavity 70a, a space for the magnet assembly 80 needs to be reserved, and the thickness of the first fixing portion 711 should not be too thick. The first fixing portion 711 has a first through hole 711a formed therein, and the first through hole 711a is provided along the central axis of the first sleeve 71 and the rotary target 50. The first rotation shaft 611 is fixed in the first through hole 711 a. The first rotation shaft 611 is connected to a first driving motor 613. For convenience of illustration, the internal structure of the sleeve 70 is omitted in fig. 4.

The second rotating mechanism 62 includes a second rotating shaft 621 and a second driving motor 623. A second fixing portion 721 is provided on the inner wall of the second sleeve 72. The second fixing portion 721 may be a planar plate body perpendicular to the length direction of the first sleeve 71. The second fixing portion 721 is provided with a second through hole 721a, and the second through hole 721a is provided along the central axis of the second sleeve 72 and the rotary target 50. The second shaft 621 is fixed in the second through hole 721 a. The second rotating shaft 621 is connected to the second driving motor 623.

The third rotation mechanism 63 includes a third rotation shaft 631 and a third driving motor 633, and the third rotation shaft 631 is connected to the third driving motor 633. A third fixing portion 731 is provided on an inner wall of the third sleeve 73. The third fixing portion 731 may be a planar plate perpendicular to the length direction of the first sleeve 71. The third fixing portion 731 is provided with a third through hole 731a, and the third through hole 731a is provided along the central axis of the third sleeve 73 and the rotary target 50. The third rotation shaft 631 is fixed in the third through hole 731 a. The third rotation shaft 631 is connected to the third driving motor 633.

The first driving motor 613 is for driving the first rotation shaft 611 to rotate at a first angular velocity ω1. The second driving motor 623 is for driving the second rotating shaft 621 to rotate at a second angular velocity ω2. The third driving motor 633 is configured to drive the third rotating shaft 631 to rotate at a third angular velocity ω3. The first angular velocity ω1 and the third angular velocity ω3 are greater than the second angular velocity ω2. The diameters of the first target 51, the second target 52, and the third target 53 are the same. Thus, the linear velocity of the first target 51 and the linear velocity of the third target 53 are greater than the linear velocity of the second target 52.

In the present embodiment, the first rotation shaft 611, the second rotation shaft 621, and the third rotation shaft 631 are disposed at intervals. The first, second and third rotating shafts 611, 621 and 631 are connected to different driving motors, respectively, thereby being rotatable at different angular speeds. Since the diameters of the first target 51 to the third target 53 are the same, when the first target 51 and the third target 53 are rotated at a greater angular velocity than the second target 52, the linear velocity of the first target 51 and the third target 53 is greater than the linear velocity of the second target 52, and thus the non-erosion areas on the first target 51 and the second target 52 can be reduced.

Alternatively, the first rotation shaft 611, the second rotation shaft 621, and the third rotation shaft 631 may be coaxially disposed to ensure that the rotation centers of the first target 51, the second target 52, and the third target 53 are on the same line, thereby ensuring film formation uniformity. The first rotation shaft 611 extends outside the rotary target 50 and is connected to a first driving motor 613. The second rotating shaft 621 may be connected to the second driving motor 623 through a transmission mechanism 624. The transmission 624 may include a turntable 6241 and a fourth spindle 6242, among other things. The rotary plate 6241 is provided with a first connection hole 6241a and a second connection hole 6241b. The first connecting hole 6241a is spaced apart from the second connecting hole 6241b. The second shaft 621 is fixedly disposed in the first connecting hole 6241a. One end of the fourth rotation shaft 6242 is fixedly disposed in the second connection hole 6241b, and the other end is connected to the second driving motor 623. The fourth rotation shaft 6242 is connected to the third driving motor 633 so as to extend outside the rotary target 50.

It is to be understood that in the present embodiment, other transmission structures may be used to connect the second driving motor 623 and the second rotating shaft 621, which is not limited herein. In other embodiments, the first rotation shaft 611, the second rotation shaft 621, and the third rotation shaft 631 may not all be coaxially disposed, for example, the first rotation shaft 611 and the third rotation shaft 631 are coaxially disposed, the second rotation shaft 621 is parallel to the first rotation shaft 611 and the third rotation shaft 631, or the first rotation shaft 611, the second rotation shaft 621, and the third rotation shaft 631 are all parallel.

According to one embodiment of the application, the sub-targets positioned at the end parts of the targets and the sub-targets positioned in the middle of the targets can be rotated at different linear speeds through the same rotating shaft, and the structure is simple and the cost is low.

According to another embodiment of the present application, the sub-target located at the end of the rotary target and the sub-target located in the middle of the rotary target are respectively connected to different rotating mechanisms, and are driven to rotate by the different rotating mechanisms. In the sputtering process, the angular velocity of the first target material can be adjusted to be larger than the angular velocity of the second target material, and the sputtering velocity of particles is improved by improving the rotation angular velocity and then the linear velocity, so that the deposition of sputtered particles and foreign matters on the first target material is reduced, and the non-erosion area is reduced.

The foregoing has provided a detailed description of embodiments of the present application, with specific examples being set forth herein to provide a thorough understanding of the present application. Meanwhile, those skilled in the art will have variations in the specific embodiments and application scope in light of the ideas of the present application, and the present description should not be construed as limiting the present application in view of the above.

Claims

1. A magnetron sputtering apparatus, characterized by comprising:

a first rotation mechanism coupled to the first target, the first rotation mechanism configured to rotate the first target at a first linear velocity; and

a second rotating mechanism coupled to the second target, the second rotating mechanism configured to rotate the second target at a second linear velocity, the first linear velocity being greater than the second linear velocity;

wherein the magnetron sputtering device further comprises a sleeve, the sleeve comprises a first sleeve and a second sleeve, the first sleeve and the second sleeve are arranged in the first direction, the first target is sleeved and fixed on the first sleeve, the first rotating mechanism is connected with the first sleeve, the second target is sleeved and fixed on the second sleeve, the second rotating mechanism is connected with the second sleeve,

the first rotating mechanism is arranged in the first sleeve, and comprises a first rotating shaft and a first transmission piece, and the first transmission piece is connected between the first rotating shaft and the first sleeve; the second rotating mechanism is arranged in the second sleeve, and comprises a second rotating shaft and a second transmission piece, and the second transmission piece is connected between the second rotating shaft and the second sleeve;

the first driving medium includes first gear and second gear, first gear cover is located in the first pivot, the second gear set up in on the first sheathed tube inner wall, and with the periphery meshing of first gear, the second driving medium includes third gear and fourth gear, the third gear cover is located in the second pivot, the fourth gear set up in on the second sheathed tube inner wall, and with the periphery meshing of third gear, the diameter of first gear is greater than the diameter of third gear.

2. The magnetron sputtering apparatus of claim 1 wherein the sleeve has a cavity therein, the magnetron sputtering apparatus further comprising a magnet assembly disposed within the cavity, the magnet assembly comprising a magnet and a motor, the magnet being fixedly connected to the motor, the motor being configured to move the magnet within the cavity.

3. The magnetron sputtering apparatus of claim 2 wherein the sleeve has a guide rail formed on an inner wall thereof, the guide rail extending in the first direction, the magnet assembly being disposed in the guide rail, the guide rail having a width greater than a width of the magnet.

4. The magnetron sputtering apparatus as claimed in claim 1, wherein the rotary target further includes a third target and a third rotation mechanism, the third target and the second target being arranged in the first direction, the third target being located at the other end portion of the target, the third rotation mechanism being connected to the third target.