JPH01205071A - Multilayered film forming device - Google Patents

Abstract

PURPOSE:To shorten the time for forming multilayered films by projecting ions beams respectively independently to plural targets by such operation as measure as provision of a partition wall for parting the particles sputtered from the plural targets. CONSTITUTION:This multilayered film forming device is constituted of a target holder 4 which allows mounting of the plural targets 5, 7, 7, 8 and is freely rotatable, ion guns 1, 51, the partition wall 13, etc. The above-mentioned ion guns 1, 51 project the ions beams 3, 53 simultaneously to two pieces of the adjacent targets 5, 6 among the plural targets 5, 6, 7, 8. The above-mentioned partition wall 13 prevent the arrival of the sputtered particles from one target 6 among the particles sputtered from the plural targets 5, 6 at a substrate 15.

Description

Detailed Description of the Invention [Industrial Applications] The present invention relates to a multilayer one-copy forming apparatus, and is particularly useful when forming multilayer metal films, insulating films, etc. on a substrate by ion beam sputtering. The present invention relates to a multilayer film forming apparatus having a structure that enables efficient formation.

[Prior Art 1] First, a case will be described taking as an example a case where four layers of films are formed on a substrate.

An example of a conventional multilayer film forming apparatus is shown in FIG.

A target holder 4 is provided within a chamber 21 having an exhaust system 22 . When forming a multilayer film using an ion beam sputtering device, as shown in the figure, an ion beam 3 produced by an ion gun 1 is irradiated from a grid 2 to a first target 5, and sputtered particles are deposited on a substrate 15.
Therefore, it was necessary to cover the substrate with a shutter 16 while performing bliss sputtering to clean the surface of the first target 5 prior to film formation.

Furthermore, when forming the next film of the second target 6 on the substrate, rotate the target holder 4 to the left to a position where the target 6 hits the ion beam, close the shutter 16, and perform bliss sputtering. A film of target 6 was formed. From then on, target 7 and target 8
The same applies to the case of forming a film.

[Problems to be Solved by the Invention] Therefore, in the conventional apparatus, when forming a multilayer film, not only does it take extra time for bliss sputtering each time the target is rotated, but it is also necessary to open and close a shutter on the substrate. Ta.

It is an object of the present invention to perform bliss sputtering of the target of the next film to be deposited at the same time during film formation, and to open and close the shutter plate on the substrate only once before forming the first film, thereby continuously forming a multilayer film. An object of the present invention is to provide an ion beam sputtering device that can efficiently perform ion beam sputtering.

[Means for Solving the Problems] In order to achieve such an object, the present invention provides an apparatus for forming a multilayer film on a substrate, which includes a rotatable target holder capable of mounting a plurality of targets, and a target holder. at least one ion gun for simultaneously irradiating two adjacent targets with an ion beam among a plurality of targets attached to the ion gun; and particles sputtered from one of the two targets. It is characterized by comprising a partition wall for preventing particles from reaching the substrate.

[Function] In the present invention, a partition wall is provided at a position connecting the vicinity of the midpoint between adjacent different targets and the ion beam irradiation direction, and the ion beam is independently irradiated onto two or more targets. Therefore, the formation time when forming a multilayer film can be shortened, and the shutter can be opened and closed only once during bliss sputtering of the first film.

[Example] The present invention will be described in detail below with reference to the drawings.

FIG. 1 is a diagram showing a first embodiment of the present invention, in which the apparatus includes a chamber 21. In addition to the vacuum evacuation system 22, two ion guns 1 and 51 are installed. Ions produced by the first sputtering gun 1 pass through the grid 2, become an ion beam 3, and are irradiated onto the first film forming target 5. Since bliss sputtering is necessary before forming the first film, the shutter 16 is closed. After a predetermined pre-sputtering, the shutter is opened to form a film on the substrate 15 to a predetermined thickness. During the steps up to this point, ions are produced using the second gun 51 for simultaneously performing pre-sputtering on the second film formation target, and the ion beam 53 is irradiated from the grid 52 onto the second film formation target 6. .

In order to avoid particles sputtered by ions irradiating the targets 5 and 6 from flying onto the substrate at the same time, a position connecting the intermediate area between the first gun 1 and the second gun 51 and the targets 5 and 6 is provided. A partition wall 13 is provided. Therefore, the particles sputtered from the target 6 do not reach the substrate 15, so only the particles from the target 5 are deposited on the substrate.

Next, in order to form a second film on the substrate, the target holder 4 is rotated so that the beam of the first gun hits the second film forming target 6. At this time, the third film forming target 7 is irradiated with the ion beam from the second bliss sputtering gun 51. During this process,
Since the second film forming target 6 has already been sufficiently bliss sputtered, the shutter 16 remains open and the second film forming target 6 is immediately sputtered.
can be formed on the substrate 15.

Similarly, the third. A fourth film is also formed. Further, a film in which these four layers are repeatedly laminated can also be formed by repeating this process.

FIG. 2 shows another embodiment of the invention.

In this case, the sputtering ion beam for the first film forming target 5 and the bliss sputtering ion beam for the S2 film forming target 6 are irradiated from the same ion gun 1. A partition wall 13 is located near the middle of the two targets in the traveling direction of the ion beam 3, and has a structure that separates the beam irradiated to both targets. Also in this case, the bliss-sputtered particles of the second film forming target do not fly to the substrate, and only the first film is formed on the substrate. By rotating the target holder 4, the second. A third and fourth film can be sequentially formed on the substrate.

FIG. 3 shows one of still other embodiments of the present invention.

In this case, the second film forming target sputtering gun is a so-called stationary ion gun 61 installed in the chamber 21. The sputtering method can be carried out in the same manner as that described in the embodiments of FIGS. 1 and 2 above.

As described above, in the embodiments shown in FIGS. 1, 2, and 3, there are four types of targets for forming a multilayer film. In this case, the type of film formed can be reduced to 4 if reactive gas ions are used.
Other types of film formation than seed target materials are also possible. By changing the target boulder, it is possible to further increase the number of targets that can be used for forming multilayer films.

FIG. 4 illustrates one such embodiment, in which six targets can be mounted. Similarly, if the size of the chamber 21 is increased, a larger number of targets can be attached, and various types of multilayer films can be formed.

Next, an example of multilayer film formation using the apparatus of the present invention will be described.

By multilayering FeNi-based magnetic films, BS: approximately 2
It is possible to produce a film with T, Ile: 1 Oe or less, Hk: 50e or less, and with almost zero magnetostriction using ion beam sputtering. Patent application already filed in 1986-1949
As shown in No. 85, a multilayer film in which 50 layers of Fe and Ni of 10 nm and 2 nm each are alternately stacked on a substrate at too-200° C. and the total thickness is 0.6 μm exhibits the above characteristics.

In the production of such a film, the apparatus of the present invention is used, and the first
A case will be described in which Fe targets are placed as targets 5 and 7 in the figure, and Ni targets are placed as targets 6 and 8, and the above multilayer film is formed on a substrate.

First, the chamber 21 is evacuated, and targets 5.6 and 7.8 are bliss sputtered for 10 minutes each (20 minutes in total) with the shutter 16 closed. After that, the shutter 16
Open the chamber, apply Fe at 10r+m (sputtering time approximately 2 minutes),
Ni is formed on the substrate by 2 nm (about 15 seconds). According to this method, there is no need for any bliss sputtering other than the first bliss sputtering, and it takes 20 minutes + 2.5 minutes to form a 0.6 μm multilayer film.
25 minutes x 50 = 132.5 minutes. On the other hand, in the case of the conventional example shown in FIG.
Bliss sputtering for about 10 seconds is required before forming each film (12.5 minutes), and in that case, it is necessary to open and close a shutter before and after bliss sputtering. If this is 15 seconds in total, then 15 seconds x 100 = 25 minutes. The total time is 177.5 minutes, and 45 minutes can be saved in producing a 0.6 μm FeNi multilayer film.

[Effects of the Invention] As described above, according to the present invention, when a film is formed on a substrate by sputtering one target, a target for forming the next film can be simultaneously sputtered. Therefore, the time for bliss sputtering and the opening and closing of the shutter can be omitted, and multilayer film formation can be performed at high speed with a simple configuration.

[Brief explanation of the drawing]

FIG. 1, FIG. 2, FIG. 3, and FIG. 4 each show an embodiment of the present invention, and FIG. 5 shows a conventional multilayer film forming apparatus. 1.51.61...Ion gun, 2.52...Grid, 3.53.63...Ion beam, 4...Target holder, 5.8,7,8,9.10... Target, 15...
- Board, l6...Shutter.

Claims (1)

[Claims] 1) An apparatus for forming a multilayer film on a substrate, comprising: a rotatable target holder to which a plurality of targets can be attached; and two adjacent targets among the plurality of targets attached to the target holder. at least one ion gun for simultaneously irradiating two targets with an ion beam; and particles sputtered from the two targets,
A multilayer film forming apparatus comprising a partition wall for preventing sputtered particles from one target from reaching the substrate.