JPS61227170A - Sputtering device - Google Patents

Sputtering device

Info

Publication number
JPS61227170A
JPS61227170A JP6713785A JP6713785A JPS61227170A JP S61227170 A JPS61227170 A JP S61227170A JP 6713785 A JP6713785 A JP 6713785A JP 6713785 A JP6713785 A JP 6713785A JP S61227170 A JPS61227170 A JP S61227170A
Authority
JP
Japan
Prior art keywords
substrate
support
dummy
films
sample plates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6713785A
Other languages
Japanese (ja)
Inventor
Junzo Toda
戸田 順三
Naoyuki Yamamoto
山本 尚之
Hitoshi Takagi
均 高木
Kazuo Kobayashi
和雄 小林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP6713785A priority Critical patent/JPS61227170A/en
Publication of JPS61227170A publication Critical patent/JPS61227170A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To permit the easy inspection of the quality of formed multi-layer films and to improve the efficiency of a sputtering device by exposing successively plural dummy sample plates in parallel with the lamination and formation of the multi-layer films onto a substrate and forming thin dummy films for inspecting the film quality. CONSTITUTION:This sputtering device laminates and forms the multi-layer films on the substrate 8 supported on a rotating substrate susceptor 7 by changing over successively plural targets 3, 4 in a vacuum vessel 1 by operating a change-over switch 9 and a shutter 11. A sample support 21 which supports plural dummy sample plates 22 is freely rotatably provided to part of the above- mentioned susceptor 7 in parallel therewith. The support 21 is turned by a rotational driving mechanism 23 disposed on the outside of the vacuum vessel 1 in accordance with the change-over of the targets 3, 4 to expose the sample plates by each sheet from a shielding cover 23 so that the thin films for inspecting the film quality by each layer are successively formed on the dummy sample plates 22.

Description

【発明の詳細な説明】 〔概 要〕 真空容器内に複数の異種ターゲ7)と、それに対向して
基板を支持した支持体が配置され、該基板上に連続して
複数の異種ターゲット物質を順に積層形成する多層膜形
成用スパッタリング装置において、上記基板支持体の一
部に各層の膜質検査用の複数のダミー試料板を支持する
試料支持体と、該ダミー試料板を一枚づつ露出させる遮
蔽カバー体を設けると共に、前記試料支持体を任意の回
転方向に回動する回転駆動機構を真空容器外に配設して
、基板上に連続的に多層膜を積層形成するに平行して、
前記試料支持体を回動して配置した複数枚のダミー試料
板を順に露出せしめ、各ダミー試料板上に各層別の膜質
検査用11膜を得るようにして、形成された多層膜の各
層の膜質検査を容易にしたことである。
[Detailed Description of the Invention] [Summary] A plurality of different types of targets 7) and a support supporting a substrate are arranged in a vacuum container, and a plurality of different types of target substances are continuously applied onto the substrate. In a sputtering apparatus for forming a multilayer film in which layers are sequentially formed, a sample support for supporting a plurality of dummy sample plates for inspecting the film quality of each layer is provided on a part of the substrate support, and a shield for exposing the dummy sample plates one by one. A cover body is provided, and a rotation drive mechanism for rotating the sample support body in an arbitrary rotational direction is disposed outside the vacuum vessel, and in parallel with the continuous lamination of the multilayer film on the substrate,
A plurality of dummy sample plates arranged by rotating the sample support are sequentially exposed, and 11 films for film quality inspection for each layer are obtained on each dummy sample plate, and each layer of the formed multilayer film is This makes it easier to inspect film quality.

〔産業上の利用分野〕[Industrial application field]

本発明は各種薄膜を被着形成するスパッタリング装置に
係り、特にスパッタリング法により複数の異MWl膜を
連続的に多層に積層形成する装置構成において、該積層
形成される各層の膜質を個々に検査するためのダミー試
料も同時に得られるようにしたスパッタリング装置の構
造に関するものである。
The present invention relates to a sputtering apparatus for depositing and forming various thin films, and in particular, in an apparatus configured to continuously form multiple layers of different MWl films by a sputtering method, the film quality of each of the laminated layers is individually inspected. The present invention relates to the structure of a sputtering apparatus that can simultaneously obtain dummy samples.

近来、複数の異種ターゲットと薄膜を形成すべき基板が
対向配置されたスパッタリング雰囲気中において、基板
と上記各ターゲット間に印加する電圧を順に切り換えて
、異なる薄膜を該基板上に連続的に多層に積層形成する
スパッタリング装置が提案されている。
Recently, in a sputtering atmosphere in which a plurality of different types of targets and a substrate on which a thin film is to be formed are arranged facing each other, the voltage applied between the substrate and each of the targets is sequentially switched, and different thin films are successively formed in multiple layers on the substrate. A sputtering device that forms layers has been proposed.

この・ような装置によって異なる薄膜を基板上に連続的
に積層形成する場合、これら各層の膜質を充分に把握し
、管理することが必要である。
When different thin films are successively layered on a substrate using such an apparatus, it is necessary to fully understand and manage the film quality of each of these layers.

〔従来の技術〕[Conventional technology]

上記した従来のスパッタリング装置としては、第3図に
示すように排気装置2が付設された真空容器1内に、そ
れぞれ異種ターゲット3.4を付設した2つのターゲッ
ト支持体5,6と、それに対向して薄膜を形成すべき基
板7を支持した支持体8が配置されている。各ターゲッ
ト支持体5゜6は真空容器と電気的に絶縁され、切換え
スイッチ9を介して直流電圧、或いは高周波電圧を選択
的に印加するように構成されている。また基板支持体7
は基板8に被着する薄膜の膜厚を均一化するために、回
転機構10により回動可能となっている。
As shown in FIG. 3, the conventional sputtering apparatus described above includes two target supports 5 and 6 each having a different type of target 3.4 attached thereto, in a vacuum chamber 1 equipped with an exhaust device 2, and A support 8 supporting a substrate 7 on which a thin film is to be formed is disposed. Each target support 5.degree.6 is electrically insulated from the vacuum vessel, and is configured to selectively apply a DC voltage or a high frequency voltage via a changeover switch 9. Also, the substrate support 7
is rotatable by a rotation mechanism 10 in order to equalize the thickness of the thin film deposited on the substrate 8.

そして前記真空容器1内をアルゴン(Ar)ガスなどの
スパッタ用ガス雰囲気にして、一方の異種ターゲット3
側のシャッタ11を開けて、該異種ターゲット3と基板
7間に直流電圧、或いは高周波電圧を印加して放電させ
、該基板7を回転させながら所要時間スパッタリングを
行い、図示しない第1の薄膜を被着形成する。
Then, the vacuum chamber 1 is made into a sputtering gas atmosphere such as argon (Ar) gas, and one of the different targets 3
The shutter 11 on the side is opened, a DC voltage or a high frequency voltage is applied between the foreign target 3 and the substrate 7 to cause a discharge, and sputtering is performed for the required time while rotating the substrate 7 to form a first thin film (not shown). Adhesive formation.

次に切換えスイッチ9を切り換えて他方の異種ターゲッ
ト4と基板7間に同じく直流電圧、或いは高周波電圧を
印加して放電させ、所要時間スパッタリングを行い、第
1の薄膜上に図示しない第2の薄膜を積層形成する。以
下同様のスパッタリング工程を繰り返すことにより前記
基板7上に連続して多層膜を形成することを可能にして
いる。
Next, the changeover switch 9 is switched to apply the same DC voltage or high frequency voltage between the other different target 4 and the substrate 7 to cause a discharge, and sputtering is performed for the required time to form a second thin film (not shown) on the first thin film. Laminated and formed. By repeating the same sputtering process thereafter, it is possible to continuously form a multilayer film on the substrate 7.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

ところで上記のように多層膜を積層形成する場合、連続
して順次積層される各at膜の膜質を把握管理すること
が極めて重要である。 しかし、上記の如き従来のスパ
ッタリング装置にあっては、真空排気工程からスパッタ
リング工程に至る一連の工程により短時間で連続的に多
層膜を被着形成することができるといった極めて効率の
良い利点を有する反面、形成された多層膜の各層の膜質
を把握することが出来ない問題がある。
By the way, when forming multilayer films as described above, it is extremely important to understand and manage the film quality of each AT film that is successively stacked. However, conventional sputtering equipment as described above has the advantage of being extremely efficient in that it can continuously deposit and form multilayer films in a short period of time through a series of steps from the vacuum evacuation process to the sputtering process. On the other hand, there is a problem in that it is not possible to grasp the film quality of each layer of the formed multilayer film.

即ち、多層膜により、その各薄膜の膜質を検査すること
は非常に至難である。
That is, it is extremely difficult to inspect the film quality of each thin film in a multilayer film.

そこで基板7上に順次各層の薄膜を形成するに際して、
逐次前記真空容器1内を大気にして基板7近傍に対応す
る膜質検査用のダミー試料板を配置することも試みたが
、この方法では多層膜の積層形成に非常に長時間を要し
、連続的に多層膜を形成可能とするスパッタリング装置
の特性及び利点が有効に発揮出来ない不都合があった。
Therefore, when forming thin films of each layer sequentially on the substrate 7,
We also attempted to gradually increase the atmosphere inside the vacuum container 1 and place a dummy sample plate for film quality inspection near the substrate 7, but this method required a very long time to form a multilayer film, and However, there is a problem in that the characteristics and advantages of a sputtering apparatus that can form a multilayer film cannot be effectively utilized.

本発明はこのような問題点に鑑みて、真空容器1内の基
板7近傍に予め、形成すべき積層数に対応する複数枚の
膜質検査用のダミー試料板を配置して置き、前記真空容
器1内を大気に戻すことなく、各薄膜の積層形成に平行
して前記複数枚の膜質検査用のダミー試料板に、順次そ
のダミー薄膜を被着し得るようにした新規なスパッタリ
ング装置を提供することを目的とするものである。
In view of these problems, the present invention places a plurality of dummy sample plates for film quality inspection in advance in the vicinity of the substrate 7 in the vacuum container 1, corresponding to the number of laminated layers to be formed. To provide a new sputtering device capable of sequentially depositing dummy thin films on the plurality of dummy sample plates for film quality inspection in parallel with the formation of layers of each thin film without returning the inside of the sputtering device to the atmosphere. The purpose is to

〔問題点を解決するための手段〕[Means for solving problems]

本発明は上記目的を達成するため、第1図に示すように
基板7を支持する支持体7の一部に、複数のダミー試料
板22を支持する試料支持体21を回動可能に設けると
共に、その前面に該ダミー試料板22を一枚づつ露出さ
せるように遮蔽カバー体23を設け、更に、前記試料支
持体21を真空容器1外に付設された回転駆動機構24
により任意の回転方向に回動制御し得るように構成され
ている。
In order to achieve the above object, the present invention rotatably provides a sample support 21 that supports a plurality of dummy sample plates 22 on a part of the support 7 that supports the substrate 7, as shown in FIG. A shielding cover body 23 is provided on the front surface of the dummy sample plate 22 so as to expose the dummy sample plates 22 one by one.
It is configured so that rotation can be controlled in any rotational direction.

〔作 用〕[For production]

このように構成された装置においては、基板7上に連続
的に多層膜をスパッタリング法により形成する際に、各
層の薄膜形成毎に試料支持体21を回動させて支持され
た複数のダミー試料板22を遮蔽カバー体23より順に
露出せしめ、該ダミー試料板22上にも同時にi膜を被
着形成することにより、膜質を検査すべき前記各層の薄
膜対応の薄膜試料を効率良く、容易に得ることが可能と
なる。
In the apparatus configured as described above, when a multilayer film is continuously formed on the substrate 7 by sputtering, the sample support 21 is rotated and supported by a plurality of dummy samples each time a thin film of each layer is formed. By sequentially exposing the plates 22 from the shielding cover body 23 and simultaneously depositing the i-film on the dummy sample plate 22, it is possible to efficiently and easily prepare thin film samples corresponding to the thin films of each layer whose film quality is to be tested. It becomes possible to obtain.

〔実施例〕〔Example〕

以下図面を用いて本発明の実施例について詳細に説明す
る。
Embodiments of the present invention will be described in detail below with reference to the drawings.

第1図は本発明に係るスパッタリング装置の一実施例を
示す断面図である。
FIG. 1 is a sectional view showing an embodiment of a sputtering apparatus according to the present invention.

図において、1は排気装置2が付設された真空容器であ
り、該真空容器1内にそれぞれ異種ターゲット3,4を
付設した2つのターゲット支持体5.6と、それに対向
して薄膜を形成すべき基板7を支持した支持体8が配置
されている。
In the figure, reference numeral 1 denotes a vacuum container equipped with an exhaust device 2, and inside the vacuum container 1 there are two target supports 5.6 each having different types of targets 3 and 4 attached thereto, and a thin film is formed opposite thereto. A support body 8 supporting a substrate 7 to be processed is disposed.

各ターゲット支持体5,6は真空容器と電気的に絶縁さ
れ、切換えスイッチ9を介して直流電圧、或いは高周波
電圧が選択的に印加される。
Each target support 5, 6 is electrically insulated from the vacuum vessel, and a DC voltage or a high frequency voltage is selectively applied via a changeover switch 9.

また基板支持体7は基板8上に被着される薄膜の膜厚を
均一化する・ために、回転機構10により回動可能とな
っており、その一部に図示の如く複数のダミー試料板2
2を支持する試料支持体21が真空容器1外に付設され
た回転駆動機構24により任意の回転方向に回動可能に
設けられ、かつ該試料支持体21は第2図の部分拡大平
面図に示すように、その表面に取付けられた複数枚のダ
ミー試料板22を一枚づつ露出するように遮蔽カバー体
23により装設されている。
In addition, the substrate support 7 is rotatable by a rotation mechanism 10 in order to equalize the thickness of the thin film deposited on the substrate 8, and a part thereof has a plurality of dummy sample plates as shown in the figure. 2
A sample support 21 that supports 2 is provided so as to be rotatable in any rotational direction by a rotation drive mechanism 24 attached outside the vacuum container 1, and the sample support 21 is shown in the partially enlarged plan view of FIG. As shown, a shielding cover body 23 is installed so that a plurality of dummy sample plates 22 attached to the surface thereof are exposed one by one.

更に、前記試料支持体21の回転軸と回転駆動機構24
の回転軸とは通常は離間しており、該試料支持体21を
所定に回動する際に、回転駆動機構24の回転軸を試料
支持体21例の回転軸へ当接接続して試料支持体21を
回動させる構成となっている。
Furthermore, the rotation shaft of the sample support 21 and the rotation drive mechanism 24
The rotation axis of the sample support 21 is normally separated from the rotation axis of the sample support 21, and when the sample support 21 is rotated in a predetermined manner, the rotation axis of the rotation drive mechanism 24 is connected in contact with the rotation axis of the sample support 21 to support the sample. The body 21 is configured to rotate.

さて、このような構成のスパッタリング装置によって基
板支持体7上の基板8に、多層膜を形成するに並行して
各層の膜質検査用ダミー試料を同時に得るには、先ず基
板支持体7上に基板8を配置すると共に、試料支持体2
1上にも形成すべき積層数に対応する複数枚の膜質検査
用のダミー試料板を配置する。
Now, in order to form a multilayer film on the substrate 8 on the substrate support 7 using a sputtering apparatus having such a configuration and simultaneously obtain a dummy sample for film quality inspection of each layer, first, the substrate is placed on the substrate support 7. 8 and sample support 2
A plurality of dummy sample plates for film quality inspection are also placed on top of the sample plate corresponding to the number of laminated layers to be formed.

次に真空容器1内を真空に排気した後、該容器1内をア
ルゴン(Ar)ガスなどからなるスパッタ用ガス雰囲気
にし、前記基板8を回転させて一方の異種ターゲット3
側のシャッタ11を開けて、該異種ターゲット3と基板
支持体7間に直流電圧、或いは高周波電圧を印加して放
電させて所要時間スパッタリングを行い、図示しない第
1の薄膜を被着形成する。
Next, after evacuating the inside of the vacuum container 1, the inside of the container 1 is made into a sputtering gas atmosphere consisting of argon (Ar) gas, etc., and the substrate 8 is rotated so that one of the different targets 3
The shutter 11 on the side is opened, and a DC voltage or high frequency voltage is applied between the foreign target 3 and the substrate support 7 to cause discharge and perform sputtering for a required period of time, thereby depositing and forming a first thin film (not shown).

次に前記回転駆動機構24の回転軸を試料支持体21例
の回転軸へ当接接続させて試料支持体21を回動させ、
第1の薄膜形成と同時に薄膜が被着された第1ダミー試
料板22を次に送り、次の第2ダミー試料板22を露出
させる。しかる後、切換えスイッチ9を切り換えて他方
の異種ターゲット4と基板7間に同じく直流電圧、或い
は高周波電圧を印加して放電させ、所要時間スパッタリ
ングを行って第1の薄膜上に図示しない第2の薄膜を積
層形成する。以下同様のスパッタリング工程を繰り返す
ことにより、前記基板7上に連続して多層膜を形成する
と共に、これに平行して試料支持体21上の複数枚のダ
ミー試料板上に、順次各層別の膜質検査用薄膜を容易に
形成することが可能となる。
Next, the rotation shaft of the rotation drive mechanism 24 is brought into contact with the rotation shaft of the sample support 21 to rotate the sample support 21,
At the same time as the first thin film is formed, the first dummy sample plate 22 coated with the thin film is sent next, and the next second dummy sample plate 22 is exposed. Thereafter, the changeover switch 9 is switched to apply a DC voltage or high frequency voltage between the other different target 4 and the substrate 7 to cause a discharge, and sputtering is performed for the required time to form a second thin film (not shown) on the first thin film. Laminated thin films are formed. Thereafter, by repeating the same sputtering process, a multilayer film is continuously formed on the substrate 7, and in parallel, the film quality of each layer is sequentially formed on a plurality of dummy sample plates on the sample support 21. It becomes possible to easily form a thin film for inspection.

〔発明の効果〕〔Effect of the invention〕

以上の説明から明らかなように、本発明に係るスパッタ
リング装置によれば、基板上に連続的に多層膜を積層形
成するに平行して、効率良く該基板に隣接して配置した
複数枚のダミー試料板上にも順次、各層別の膜質検査用
薄膜を得ることが可能となり、形成された多層膜の各層
の膜質を迅速に、かつ容易に検査することができる優れ
た利点を有する。
As is clear from the above description, according to the sputtering apparatus according to the present invention, a plurality of dummy films are efficiently arranged adjacent to the substrate in parallel with the continuous stacking of multilayer films on the substrate. It becomes possible to sequentially obtain thin films for film quality inspection for each layer on the sample plate, and has the excellent advantage that the film quality of each layer of the formed multilayer film can be quickly and easily tested.

従って、この種の連続多層膜形成用スパッタリング装置
や膜質検査用薄膜試料を必要とする各種スパッタリング
装置に適用して実用上の効果は大きい。
Therefore, it has great practical effects when applied to this type of sputtering apparatus for forming continuous multilayer films and various sputtering apparatuses that require thin film samples for film quality inspection.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明に係るスパッタリング装置の一実施例を
示す断面図、 第2図は第1図における試料支持体の配設構成の一実施
例を示す部分拡大平面図、 第3図は従来のスパッタリング装置を説明するための断
面図である。 第1図及び第2図において、 1は真空容器、3.4は複数の異種ターゲフト、7は基
板支持体、8は基板、9は切換えスイッチ、21は試料
支持体、22は複数のダミー試料板、23は遮蔽カバー
体、24は回転駆動機構をそれぞれ示す。 4号さ’Asr*fj*TivR1b*fLjM’lr
+iol!III?  図 第2図
FIG. 1 is a sectional view showing an embodiment of a sputtering apparatus according to the present invention, FIG. 2 is a partially enlarged plan view showing an embodiment of the arrangement of the sample support in FIG. 1, and FIG. 3 is a conventional sputtering apparatus. FIG. 2 is a cross-sectional view for explaining the sputtering apparatus of FIG. In FIGS. 1 and 2, 1 is a vacuum container, 3.4 is a plurality of different target lifts, 7 is a substrate support, 8 is a substrate, 9 is a changeover switch, 21 is a sample support, and 22 is a plurality of dummy samples. 23 is a shielding cover body, and 24 is a rotational drive mechanism. No.4'Asr*fj*TivR1b*fLjM'lr
+iol! III? Figure 2

Claims (1)

【特許請求の範囲】[Claims] 真空容器(1)内に複数の異種ターゲット(3)、(4
)と、それに対向して基板(8)を支持した支持体(7
)が配置され、該真空容器(1)内をスパッタ用ガス雰
囲気にして放電させ、複数の異種ターゲット物質を基板
(8)上に順次積層形成する装置構成において、上記基
板支持体(7)の一部に、それと平行して複数のダミー
試料板(22)を支持する試料支持体(21)を回転自
在に設けると共に、該ダミー試料板(22)を一枚づつ
ターゲット側に露出させる遮蔽カバー体(23)を設け
、かつ被スパッタターゲットの切換えに応答して前記試
料支持体(21)を任意の回転方向に回動して、別のダ
ミー試料板(22)を露出させるための回転駆動機構(
24)を真空容器(1)外に配設して成ることを特徴と
するスパッタリング装置。
A plurality of different targets (3), (4) are placed in a vacuum container (1).
) and a support (7) that supported the substrate (8) opposite to it.
) is placed in the vacuum chamber (1), the inside of the vacuum vessel (1) is made into a sputtering gas atmosphere, and discharge is caused to sequentially form a plurality of different target materials on the substrate (8). A sample support (21) that supports a plurality of dummy sample plates (22) is rotatably provided in a part thereof in parallel, and a shielding cover that exposes the dummy sample plates (22) one by one to the target side. a rotational drive for exposing another dummy sample plate (22) by rotating the sample support (21) in an arbitrary rotational direction in response to switching of sputtering targets; mechanism(
24) is arranged outside the vacuum vessel (1).
JP6713785A 1985-03-29 1985-03-29 Sputtering device Pending JPS61227170A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6713785A JPS61227170A (en) 1985-03-29 1985-03-29 Sputtering device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6713785A JPS61227170A (en) 1985-03-29 1985-03-29 Sputtering device

Publications (1)

Publication Number Publication Date
JPS61227170A true JPS61227170A (en) 1986-10-09

Family

ID=13336210

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6713785A Pending JPS61227170A (en) 1985-03-29 1985-03-29 Sputtering device

Country Status (1)

Country Link
JP (1) JPS61227170A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6487768A (en) * 1987-09-29 1989-03-31 Hitachi Ltd Multifunction vacuum plating device
JPH02185970A (en) * 1989-01-12 1990-07-20 Ishikawajima Harima Heavy Ind Co Ltd Film thickness meter for vapor-deposition device
JPH0320093A (en) * 1989-01-19 1991-01-29 Natl Res Inst For Metals Thin film manufacturing device
KR101076218B1 (en) 2008-11-03 2011-10-26 엘아이지에이디피 주식회사 Formation apparatus and method thereof of alloy composite membrane
CN102234783A (en) * 2010-04-28 2011-11-09 鸿富锦精密工业(深圳)有限公司 A target material pedestal and a film plating apparatus employing the target material pedestal
RU2485212C1 (en) * 2011-10-24 2013-06-20 Открытое акционерное общество "Национальный институт авиационных технологий" Simulation methods of vacuum ion-beam treatment processes (versions), and specimen for their implementation

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6487768A (en) * 1987-09-29 1989-03-31 Hitachi Ltd Multifunction vacuum plating device
JPH02185970A (en) * 1989-01-12 1990-07-20 Ishikawajima Harima Heavy Ind Co Ltd Film thickness meter for vapor-deposition device
JPH0320093A (en) * 1989-01-19 1991-01-29 Natl Res Inst For Metals Thin film manufacturing device
KR101076218B1 (en) 2008-11-03 2011-10-26 엘아이지에이디피 주식회사 Formation apparatus and method thereof of alloy composite membrane
CN102234783A (en) * 2010-04-28 2011-11-09 鸿富锦精密工业(深圳)有限公司 A target material pedestal and a film plating apparatus employing the target material pedestal
RU2485212C1 (en) * 2011-10-24 2013-06-20 Открытое акционерное общество "Национальный институт авиационных технологий" Simulation methods of vacuum ion-beam treatment processes (versions), and specimen for their implementation

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