JPH0633225A - Vacuum deposition device - Google Patents

Abstract

PURPOSE:To vary the kind and forming order of deposited film for each substrate by changing the position of a shutter by providing the shutter to cover only the specified region of a planetary substrate holding surface opposed to a vapor deposition source. CONSTITUTION:A planetary body 1 holding plural substrates W is provided in a vacuum vessel 3 and rotated around a rotation axis P, and the substrate holding surface 1a is opposed to a vapor deposition source 2. The source 2 consists of a crucible 5 contg. a vapor deposition material 4 (Al, Ni, etc.) and an electron gun 6 to emit an electron beam B. A shutter 10 is furnished to cover only the specified region of the substrate holding surface 1a, and the shutter 10 is turned by a mechanism 8 to deposit the materials 4 of a different kind on the surfaces of the substrates W by changing it's position. Consequently, the material 4 is selectively deposited on the substrate W.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vacuum vapor deposition apparatus used in a physical film deposition (PVD) process in a semiconductor manufacturing process.

[0002]

2. Description of the Related Art Recently, an electron beam heating type is generally used as a vacuum vapor deposition apparatus. As shown in FIG. 7, this vacuum vapor deposition apparatus is provided with a plurality of semiconductor substrates (wafers) W. A planetary (wafer holder) 1 that can be held and rotated about the rotation axis P, a vapor deposition source 2 that is arranged at a position facing the substrate holding surface 1a of this planetary 1, and a vacuum exhaust after accommodating these The bell jar (vacuum container) 3 is provided. The vapor deposition source 2 that constitutes this vacuum vapor deposition apparatus includes a crucible 5 that contains a vapor deposition material 4 such as Al or Ni and is water-cooled, and electrons that irradiate the vapor deposition material 4 with an electron beam B. It is composed of a gun (E gun) 6. That is, the vapor deposition material 4 housed in the crucible 5 is heated and vaporized by the irradiation of the electron beam B, and the atoms (molecules) of the vapor deposition material 4 vaporized in the high vacuum are on the surface of the semiconductor substrate W. The deposited film is formed after reaching the point.

Here, the crucible 5 shown in FIG. 7 has a structure capable of accommodating a plurality of kinds of vapor deposition materials 4 different from each other, and is rotated when forming multilayer wiring. The crucible 5 is rotated and positioned by the operation mechanism 7, and the electron beam B is applied only to the required vapor deposition material 4.
Is adjusted so that the electron beam B is emitted. Further, reference numeral 8 in FIG. 7 denotes a rotation operation mechanism arranged to rotate the planetary 1, and 9
Indicates the operation axis thereof, and the vacuum evacuation device, the vacuum gauge, etc. are not shown in this figure.

[0004]

By the way, when the vacuum vapor deposition apparatus having the above-mentioned conventional structure is used, vapor deposition is simultaneously performed on all of the plurality of semiconductor substrates W held by the planetary 1, that is, a so-called batch process. Therefore, in the same batch process such as when forming a multilayer wiring, the type and order of formation of the deposited film may be different for each semiconductor substrate W, or the deposited film may or may not be formed. Not possible, all semiconductor substrates W
The same kind of deposited film is always formed on the surface of the same in the same order. That is, A is present on the surface of a semiconductor substrate W.
While forming a deposited film in the order of 1 and Ni, Ni and Al are formed in order on another semiconductor substrate W, or alternatively, only Al is deposited on one semiconductor substrate W and another semiconductor substrate W is formed on the other semiconductor substrate W. The selectivity of depositing Al and Ni cannot be obtained. And in such cases,
Another batch process is required, which increases the labor required for vacuuming the bell jar 3.

Furthermore, in this vacuum vapor deposition apparatus, it is difficult to individually measure the thickness of each deposited film when a plurality of types of deposited films are formed on the surface of the semiconductor substrate W,
This also caused inconvenience in process control.

The present invention was devised in view of such inconveniences. Even in the same batch processing, the type and order of formation of the deposited film for each semiconductor substrate W are varied, and the presence or absence of the deposited film is formed. It is an object of the present invention to provide a vacuum vapor deposition apparatus capable of arbitrarily obtaining such selectivity.

[0007]

In order to achieve such an object, a vacuum vapor deposition apparatus according to the present invention comprises a planetary capable of holding and rotating a plurality of semiconductor substrates, and a substrate holding surface of the planetary. A vapor deposition source arranged at a position facing each other, and a shutter covering only a predetermined region of the substrate holding surface.

[0008]

According to the above structure, when the shutter covers the predetermined area of the planetary substrate holding surface, both the predetermined area and the semiconductor substrate held on the predetermined area are shielded from the vapor deposition source by the shutter. become. Therefore, the deposited film made of the evaporated evaporation material is not formed on the surface of the semiconductor substrate shielded from the evaporation source, and the evaporation material is deposited on the surface of the shutter.

[0009]

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 is a sectional view showing a simplified vacuum evaporation apparatus according to this embodiment, FIG. 2 is a plan view showing a state of the planetary viewed from below, and FIGS. 3 to 5 respectively show a shutter and a shutter. It is a top view which shows the state which looked at the modification from the lower side. Since the entire structure of this vacuum vapor deposition apparatus is basically the same as that of the conventional example, the structure shown in FIG.
Parts and portions that are the same as or correspond to each other are denoted by the same reference numerals.

As shown in FIGS. 1 and 2, this vacuum vapor deposition apparatus holds a planetary 1 capable of holding a plurality of semiconductor substrates W and then rotating about a rotation axis P, and a substrate holding of the planetary 1. It is provided with a vapor deposition source 2 arranged at a position facing the surface 1a, and a bell jar 3 which is evacuated after accommodating these, and the vapor deposition source 2 is a crucible containing a vapor deposition material 4 such as Al or Ni. 5 and an electron gun 6 which irradiates the vapor deposition material 4 with an electron beam B. The planetary 1 is provided above the bell jar 3 and the vapor deposition source 2 is provided below the bell jar 3.

Further, this vacuum vapor deposition apparatus is provided with a shutter 10 which is arranged close to the substrate holding surface 1a of the planetary 1 and covers only a predetermined region of the substrate holding surface 1a, and the shutter 10 serves as the planetary 1. It is supported in a freely rotatable state around the same axis P of rotation.
That is, the shutter 10 is formed as a semicircular flat plate centered on the rotation axis P as shown in FIG. 3, and is inserted, for example, inside the operation shaft 9 of the hollow planetary 1. The structure is such that the center point position is restricted by the operation shaft 11. At this time, the shutter 1
The operation shaft 11 of 0 is operated by using the same rotation operation mechanism 8 as the operation shaft 9 of the planetary 1 or a rotation operation mechanism (not shown) provided separately from the rotation operation mechanism 8. It is designed to be operated in synchronization with the shaft 9 or independently.

By the way, the planar shape of the shutter 10 is not limited to the semicircular shape as shown in FIG.
As shown in FIG. 4, openings 10a corresponding to a predetermined number of semiconductor substrates W may be formed, and the entire surface excluding these openings 10a may have a circular shape that covers the substrate holding surface 1a of the planetary 1. Further, as shown in FIG. 5, it is composed of a plurality of overlapping fan-shaped flat plates 10b, and has a structure in which the size of a predetermined region of the substrate holding surface 1a can be changed by opening / closing these. Of course, it may be.

Also in the vacuum vapor deposition apparatus according to the present embodiment, the electron gun 6 constituting the vapor deposition source 2 is formed as in the conventional example.
The vapor deposition material 4 housed in the crucible 5 is heated and evaporated by the electron beam B emitted from the semiconductor substrate W in which the vaporized vapor deposition material 4 is held on the substrate holding surface 1a of the planetary 1. The film reaches the surface of and the deposited film is formed.

However, when the shutter 10 of the vacuum vapor deposition apparatus covers a predetermined area of the substrate holding surface 1a of the planetary 1, the semiconductor substrate W held on the predetermined area sandwiches the shutter 10. In this state, the semiconductor substrate W faces the vapor deposition source 2 and these semiconductor substrates W are shielded from the vapor deposition source 2 by the shutter 10. Therefore, the deposited film made of the evaporated evaporation material 4 is not formed on the surface of the semiconductor substrate W held on the predetermined region of the substrate holding surface 1a, and the deposited film made of the evaporation material 4 is not formed. Are formed on the surface of the shutter 10. Then, at this time, when the shutter 10 is rotated to correspond to the change of the vapor deposition material 4 and its position is changed, different vapor deposition materials 4 are deposited on the respective surfaces of the semiconductor substrates W. That is, when such an operation is performed, even in the same batch process, a deposited film is formed in the order of Al and Ni on the surface of a semiconductor substrate W, and Ni is formed on another semiconductor substrate W. , Al in this order, or alternatively, only Al is deposited on the surface of one semiconductor substrate W and Al and Ni are deposited on the other semiconductor substrate W. .

Further, by rotating the shutter 10 every time when vapor deposition is performed when forming the multi-layer wiring, the semiconductor substrate W for film thickness monitoring covered by the shutter 10 is changed. Semiconductor substrate W
Only one kind of deposited film of different kind is formed on each. As a result, even when a plurality of types of deposited films are formed on the surface of the semiconductor substrate W that is to be another product, the thickness of each deposited film can be individually measured. The shutter 10 as described above
The operation of is synchronized with the rotation of the planetary 1, and is independently performed when the planetary 1 is stopped without being rotated.

By the way, the shutter 1 in the above embodiment
Although 0 has a structure capable of rotating similarly to the planetary 1, the structure is not limited to such a rotating structure. For example, as shown in FIG.
The structure may be such that only the sliding operation is performed along the direction orthogonal to the rotation axis P so as to cover the a. That is, the shutter 10 covers the predetermined area on the substrate holding surface 1a of the planetary 1 by being operated to move in and out of the bell jar 3. Note that, in FIG. 6, a sealing (airtight) structure of the shutter 10 with respect to the bell jar 3 is omitted. When the shutter 10 having such a structure is adopted, the predetermined region of the substrate holding surface 1a shielded from the vapor deposition source 2 by the shutter 10 is changed by rotating the planetary 1. Become.

[0018]

As described above, since the vacuum vapor deposition apparatus according to the present invention is provided with the shutter that covers only the predetermined area of the substrate holding surface in the planetary, it is possible to cover the shutter with this shutter. The semiconductor substrate held on the predetermined region of the substrate holding surface is shielded from the vapor deposition source. Therefore, the deposited film made of the evaporated vapor deposition material is not formed on the surface of these semiconductor substrates, and the vapor deposition material is deposited on the surface of the shutter.

Therefore, according to this vacuum vapor deposition apparatus,
Even in the same batch process, by changing the position of the shutter, it is possible to change the type and formation order of the deposited film for each semiconductor substrate, and to select whether or not the deposited film is formed. In addition, the thickness of each deposited film formed on the surface of the semiconductor substrate can be individually measured, and the process control can be facilitated.

[Brief description of drawings]

FIG. 1 is a schematic cross-sectional view of a vacuum vapor deposition device according to an embodiment.

FIG. 2 is a plan view showing a state in which the planetary is viewed from below.

FIG. 3 is a plan view showing a state where the shutter is viewed from below.

FIG. 4 is a plan view showing a modified example of the shutter as viewed from below.

FIG. 5 is a plan view showing a modified example of the shutter as viewed from below.

FIG. 6 is a cross-sectional view showing a modified example of the vacuum vapor deposition device.

FIG. 7 is a cross-sectional view showing a simplified vacuum deposition apparatus according to a conventional example.

[Explanation of symbols]

 1 Planetary 1a Substrate holding surface 2 Deposition source 10 Shutter

Claims (2)

[Claims] 1. A planetary (1) capable of holding and rotating a plurality of semiconductor substrates (W), and a vapor deposition source (2) arranged at a position facing a substrate holding surface (1a) of the planetary (1). ) And a shutter (10) covering only a predetermined area of the substrate holding surface (1a), the vacuum vapor deposition apparatus. 2. The shutter (10) is a planetary (1).
The vacuum vapor deposition apparatus according to claim 1, wherein the vacuum vapor deposition apparatus can rotate about the same rotation axis (P) as the center.