JPH04183856A - Magnetron sputtering method and system - Google Patents

Abstract

PURPOSE:To deposit a composition-gradient film with the composition continuously changing in the thickness direction by making a substrate eccentric to a target, arranging a notched shielding plate between the substrate and target and carrying out sputtering while rotating the substrate. CONSTITUTION:A substrate 4 is made eccentric to a target 6, and a notched shielding plate 8 is arranged between the substrate 4 and target 6. Sputtering is carried out while rotating the substrate 4 by a vertical shaft 5a through a holder 5. As a result, the area of the substrate can be increased, and a laminated film having different compositions is easily formed.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a magnetron sputtering method and apparatus, and in particular, to a magnetron sputtering method and apparatus, in particular, it is possible to increase the area of a substrate on which a film is deposited, to freely control the composition of the film, and to form a multilayer film or a compositionally graded film. The present invention relates to a magnetron sputtering method and apparatus capable of forming a film. The present invention can be used to form deposited films in various devices.

[Prior Art] Fig. 5 shows a conventional magnetron sputtering apparatus, in which 1 is a vacuum evacuation system, 2 is a processing chamber, 3 is leak pulp, 4 is a substrate on which a film is to be formed, and 5 is a fixed 6 is a target provided coaxially with the substrate 4 below the substrate 4, 7 is a power source, and 8 is a shielding plate provided horizontally movably between the substrate 4 and the target 6.

[Problem 1 to be Solved by the Present Invention] In conventional magnetron sputtering, as shown in FIG. 5, the substrate 4 and target 6 are coaxially stationary during sputtering. Furthermore, the distance between the substrate 4 and the target 6 is also limited in terms of film formation speed. For this reason, there is a limit to the size of a substrate on which a film with a uniform thickness distribution can be deposited.

Furthermore, as a method to solve this drawback, it is possible to generate a plurality of plasmas, and this includes a method of arranging a large number of magnetic poles and a method of moving plasma rings in the radial direction and superimposing them.

However, it has been difficult to adjust the film thickness distribution, and the control of the plasma position has been complicated. It was also difficult to control the composition of the film.

In this way, conventional magnetron sputtering
It is quite difficult to increase the area of the substrate, and it is also difficult to create laminated films with different compositions or compositionally graded films.

The present invention has been made in view of the above-mentioned circumstances, and an object of the present invention is to provide a magnetron sputtering method and apparatus capable of increasing the area of a substrate and producing a laminated film with a composition gradient.

[Means and effects for solving the problem] In the present invention, when performing magnetron sputtering, the substrate and the target are made eccentric to each other, a shielding plate having a cutout is arranged between the substrate and the target, and the substrate is rotated. The sputtering was performed in the same state.

In addition, as a device for this purpose, a substrate and a target are placed eccentrically from each other, a shielding plate having a notch is placed between the substrate and the target with the notch positioned above the target, and the substrate is rotated. I set it up freely.

[Example] The present invention will be described below based on embodiments shown in the drawings.

Figure 1.2 explains one embodiment of the present invention, in which 1 is a vacuum evacuation system, 2 is a processing chamber, 3 is a sputtering gas introduction boat, and the upper part of the inside of the processing chamber 2 is covered with a deposited film. A substrate 4 on which is formed is held and arranged by a holder 5. Further, a sputtering target 6 is arranged at the lower part of the processing chamber 2 in an eccentric state about the diameter of the substrate 4 . Furthermore, a shielding plate 8 having a notch (opening) that can adjust the film thickness distribution is installed between the substrate 4 and the target 6. The holder 5 and the substrate 4 are disk-shaped and are arranged horizontally so as to be freely rotatable about a vertical axis 5a. As shown in FIG. 2, the shielding plate 8 is a disc-shaped member held horizontally by a non-rotating vertical shaft 8a that is coaxial with the holder 5. A portion thereof has a relatively narrow fan-shaped notch 8c that matches the width of the lower target 6. The target 6 is horizontally long and is provided eccentrically from the substrate 4 and the shielding plate 8. That is, the target 6 is placed below the notch 8c of the shielding plate 8, as shown in FIG.

In this apparatus, by rotating the substrate 4 and the holder 5 at an appropriate speed during film formation, the length of the target 6 is approximately 2
A film with a uniform thickness distribution can be obtained on the lower surface of a relatively large substrate 4 having twice the diameter.

In the above embodiment, when a substantially rectangular plasma-controlled magnetron sputtering target is used as the target, as shown in FIGS. 3 and 4, the target 6 is composed of partial targets 6a and 6b, and the back surface of the target is Magnet 9 and solenoid coils 10a and 10b on the side
is located. Here, if the magnetic fields Bm and Bc generated by the solenoid coils 10a and 10b are appropriately adjusted as shown in FIG. 4, the plasma 11 moves alternately over the partial targets 6a and 6b. Therefore, by appropriately adjusting the period in which the plasma 11 moves and the period in which the substrate 4 rotates, laminated films having different compositions can be deposited on the substrate 4. For example, a light element such as carbon or silicon is used for the target 6a, a heavy element such as titanium, tungsten, molybdenum, or iron is used for the target 6b, and the conditions are such that only the target 6a is sputtered and only the target 6b is sputtered. By alternately setting these conditions and at the same time appropriately rotating the substrate holder 5, a layer made of a light element such as silicon (for example, a 30-layer thick layer and a layer made of a heavy element such as molybdenum) is formed on the substrate surface. (For example, 60 thick layers could be formed alternately, and thus a multilayer film for soft X-rays could be easily formed on a large-area substrate.

Further, for example, using silicon as the target 6a,
A high melting point metal such as titanium, tungsten, molybdenum, tantalum, etc. is used as the target 6b, and conditions are set so that only the target 6a is sputtered in the early stage of sputtering, and the spatter of the target 6a gradually decreases and the spatter of the target 6b is sputtered in the middle stage of sputtering. By setting conditions so that sputtering gradually increases, and setting conditions so that both targets 6a and 6b are sputtered at a predetermined ratio in the latter stage of sputtering, polysilicon is formed as a first layer on the surface of substrate 4. A high melting point silicide layer such as molybdenum silicide whose composition changes continuously in the thickness direction is formed as the second layer, and a high melting point silicide layer such as molybdenum silicide whose composition is uniform in the thickness direction as the third layer. Thus, a polycide electrode with less stress and less likely to cause delamination was easily formed.

[Effects of the Invention] As is clear from the above description, according to the present invention, the area of the substrate can be increased by making the substrate and target eccentric, inserting a shielding plate having a notch between them, and rotating the substrate. With this method, it is possible to easily deposit laminated films with different compositions and compositionally graded films in which the composition changes continuously in the thickness direction.

[Brief explanation of the drawing]

1 to 3 show one embodiment for carrying out the method of the present invention, FIG. 1 is a schematic front view, FIG. 2 is a view taken along the line n-n in FIG. 3 is a front view of the target and the magnet section, FIG. 4 is an explanatory view showing one embodiment of the operating method of the present invention, and FIG. 5 is a schematic front view showing an example of a conventional device similar to the present invention. be. ■...Vacuum exhaust system, 2...Processing chamber, 4...Substrate, 5...
...Substrate holder, 6...Target,
8... Shielding plate, 8c... Notch,
9...Magnet, 10...Solenoid coil, 11...Plasma. Patent applicant: Ube Industries, Ltd.

Claims (2)

[Claims] (1) A magnetron sputtering method in which the substrate and target are made eccentric to each other, a shielding plate having a notch is placed between the substrate and the target, and sputtering is performed while the substrate is rotated. (2) The substrate and the target are arranged eccentrically from each other, a shielding plate having a notch is placed between the substrate and the target with the notch positioned above the target, and the substrate is provided so as to be freely rotatable. Magnetron sputtering equipment.