CN102315064A - Magnetron and thin film deposition treatment equipment applying same - Google Patents
Magnetron and thin film deposition treatment equipment applying same Download PDFInfo
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- CN102315064A CN102315064A CN2010102249561A CN201010224956A CN102315064A CN 102315064 A CN102315064 A CN 102315064A CN 2010102249561 A CN2010102249561 A CN 2010102249561A CN 201010224956 A CN201010224956 A CN 201010224956A CN 102315064 A CN102315064 A CN 102315064A
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Abstract
The invention provides a magnetron, which comprises a center magnetic control partition, an edge magnetic control partition and a driving mechanism, wherein the driving mechanism can synchronously or independently drive magnetic body groups in the center magnetic control partition and the edge magnetic control partition and make the magnetic body groups run in the own magnetic control partition according to predetermined tracks. The magnetron can effectively increase the metal atom ionization rate of the whole target region, particularly an edge region, so as to improve the hole filling uniformity of the edge region of a substrate. Furthermore, the invention also provides thin film deposition treatment equipment applying the magnetron.
Description
Technical field
The present invention relates to microelectronics technology, particularly, relate to a kind of magnetron and use the thin film deposition process equipment of this magnetron.
Background technology
In the industry, the level of microelectronic processing technique has obtained unprecedented achievement in modern times.Integrated circuit is a kind of typical microelectronic product; Fine structures such as its hole through on silicon chip, processing different shape, groove; Form small microelectronic elements such as transistor through in above-mentioned hole and groove, filling material different then; And through metal interconnection layer each microelectronic element is coupled together according to different electrology characteristics, finally form large-scale integrated circuit.Wherein, the production technology of metal interconnecting layer such as related copper, aluminium all need be achieved by sputtering technology in the production process of integrated circuit.
Along with the continuous development of microelectric technique and constantly dwindling of characteristic size, in sputtering technology to deeply/through hole of wide bigger (ratio of the hole degree of depth and width is greater than 1) and the filling capacity of narrow channel seem important further.But, the deposition direction of the uncontrollable sputtering particle of conventional sputter technology, thus can't accomplish smoothly to deeply/wide bigger through hole and the filling of narrow channel.As shown in Figure 1; When adopting conventional sputter technology to carry out the hole filling; Be easy to occur such problem: promptly; In the filling at hole bottom corners place still imperfect tense, has piled up a large amount of filler (be called top-hung in the industry and hang phenomenon) and with the hole complete closed, thereby hinder the continuation of hole inside has been filled at hole top corner place.
In order to address the above problem; Plasma magnetron sputtering (Magnetron Sputtering) technology is arisen at the historic moment; It can make the metallic atom ionization that sputters; And the energy and the direction of motion through the control metal ion, it is successfully got into and the filling pore sidewall, thus improve to deeply/wide bigger through hole and the step covering power of narrow channel.
See also Fig. 2, be the principle schematic of magnetron sputtering technique.Magnetron sputtering is a kind of high efficiency sputtering technology; Its principle is: utilize magnetron between substrate and sputtering target material, to load the magnetic field of intersecting with electric field; To limit the electronic motion scope and to prolong the electronic motion track; Make electronics ionization argon gas atmo and form argon ion to greatest extent, argon ion bombards target material surface and makes target material break away from target material surface with the state of metallic atom or ion then.
In above-mentioned magnetron sputtering technique, the ionization level of metallic atom is an important indicator.The ionization level of so-called metallic atom is meant the metallic shared ratio in all quilt metallics that sputter that breaks away from target with ionic condition.As shown in Figure 3; Can there be certain included angle between the shooting angle of the metallic atom of unionization and the substrate normal direction; And neutral metallic atom is not easy to receive the control of lower electrode bias; Thereby the angle during still according to the particle outgoing gets in the hole in the hole filling process; Thereby the hole shown in Fig. 3 occurs and fill the result: the metallic majority that is deposited near the hole (two holes of A and C among the figure) the substrate edge is from the target of this hole near center one side top; Again owing to the majority in the above-mentioned metallic gets in the hole with shooting angle; Thereby cause hole more, and finally cause being deposited on and keep to the side the thickness of metal film of a side in the hole, hole promptly occurs and fill asymmetric problem obviously greater than film thickness near center one side at the metallic that the metallic that is deposited on the sidewall near substrate edge is deposited on respect to the sidewall near substrate center.This shows that the ionization level of increase metallic atom is filled uniformity to the hole of sputtering technology and played crucial effects; And whether the structural design of magnetron rationally will directly influence in sputter procedure the ionization result to metallic atom.
See also Fig. 4, wherein show a kind of existing magnetron structures.Drive the orbiting motion that magnet group 84 is carried out asteroid formula as shown in Figure 5 through one group of planet circular system (fixed gear 72, drive 76, moving gear 78, master arm 74 and slave arm 80) transmission mechanism in this magnetron.So-called asteroid track is meant, the track that rotate around fixed star with asteroid in the approximate universe under the drive of planet circular system in the motor point and a kind of running orbit of being carried out around the center of planet circular system.In sputter procedure; Be loaded into target on the power majority can be concentrated in the magnetic field range of magnet group 84; Because magnet group 84 pole dimension are less; Thereby target power is constrained in the very little scope, and therefore the plasma area below magnet group 84 has very high power density, thus but the moment raising magnet group 84 target atom ionization levels in the zone that pass through.Meanwhile; Magnet group 84 runs up with desired trajectory as shown in Figure 5 magnetron through transmission mechanism; So that above-mentioned magnet group 84 is accomplished scanning to whole target zone in the short as far as possible time; Thereby shorten the scan period as far as possible, make each zone of target all have higher metallic atom ionization level.The said scan period is meant that the magnet group accomplishes the used duration of single pass circulation in its running orbit.
Though above-mentioned magnetron can improve the ionization level of target atom to a certain extent, there is following shortcoming inevitably in it:
One of which can be found out through running orbit shown in Figure 5, and the magnet group in the above-mentioned magnetron is starkly lower than the scanning density to the target center zone for the scanning density of target fringe region when the target zone is scanned.This just directly causes the ionization level of target fringe region metallic atom will be starkly lower than the ionization level of target center regional metal atom, and then causes the asymmetric problem of hole filling thickness of substrate edge shown in Figure 3.When this magnetron is applied to large-sized target as sputter technology, the problems referred to above will be more obvious.
Its two, along with improving constantly of technological level, sizes of substrate will increase to 450mm gradually, corresponding target size can increase to 650～700mm thereupon.At this moment, the scanning area of magnetron also will be multiplied, if will make the scan period of magnetron constant, will significantly improve the speed of service of magnetron.But; After significantly improving, the speed of service of magnet group just is difficult to control its running precision; If can not guarantee the running precision of magnet group, also just can't obtain uniform Distribution of Magnetic Field at target material surface, this will influence the uniformity to the metal ionization of overall target.And if do not improve the speed of service of magnet group; Then will certainly prolong the scan period of magnet group; This technology duration may occur less than the situation of magnet group scan period, that is, the magnet group had only been accomplished scanning to part target zone when technology finished; Will be apparently higher than not by the metal ionization level in scanned target zone by the metal ionization level in scanned target zone; Accordingly, also can be better by the uniformity that the hole of the corresponding substrate region of scanned target zone institute is filled, but then not relatively poor relatively by the uniformity of the hole of scanned target area relative substrate region filling; Have a strong impact on the whole hole filling quality of substrate the most at last.Therefore, the magnetron of said structure can't satisfy the sputtering technology requirement of large size substrate, particularly 450mm and above size substrate.
Summary of the invention
For addressing the above problem, the present invention provides a kind of magnetron, and it can make the target fringe region obtain higher metallic atom ionization level, thereby each regional hole of substrate all can well be filled, and can satisfy the sputtering technology requirement of large size substrate.
For addressing the above problem; The present invention also provides a kind of thin film deposition process equipment of using above-mentioned magnetron; Its same its can make the target fringe region obtain higher metallic atom ionization level; Thereby each regional hole of substrate all can well be filled, and can satisfy the sputtering technology requirement of large size substrate.
For this reason, the present invention provides a kind of magnetron, is used for forming equally distributed magnetic field at target material surface, and said magnetron comprises: center magnetic control subregion, and it has the center magnet group that applies magnetic field corresponding to the target center zone; Edge magnetic control subregion, it is provided with around said center magnetic control subregion, has the edge magnets group that applies magnetic field corresponding to the target fringe region; Driving mechanism; It comprises central drive mechanism that is connected with said center magnet group and the edge driving mechanism that is connected with said edge magnets group; Said central drive mechanism and edge driving mechanism can be synchronously or drive said center magnet group independently and the edge magnets group is moved along projected path in magnetic control subregions separately, to form equally distributed magnetic field at the central area and the fringe region of said target respectively.
Wherein, said edge magnets group comprises the small magnet of radially a plurality of and/or circumferential array and is covered with said edge magnetic control subregion that wherein, the N of adjacent small magnet, S level are interlocked and arranged; Said edge magnets group is that rotating shaft rotatablely moves as circumference with the target center under the driving of said edge driving mechanism.
Wherein, said edge magnets group comprises the sub-magnet group in a plurality of independently edges, and the sub-magnet group in each edge comprises inner magnet again and around a plurality of outer magnets of said inner magnet, and the polarity near the magnetic pole of target one side on said outer magnet and the said inner magnet is opposite; The sub-magnet group in each edge is that rotating shaft rotatablely moves as circumference with the target center under the driving of driving mechanism on the edge of.
Wherein, said center magnet group comprises the small magnet of radially a plurality of and/or circumferential array and is covered with said center magnetic control subregion that wherein, the N of adjacent small magnet, S level are interlocked and arranged; Said center magnet group is that rotating shaft rotatablely moves as circumference with the target center under the driving of central drive mechanism.
Wherein, said center magnet group comprises an inner magnet and around a plurality of outer magnets of said inner magnet, and the polarity near the magnetic pole of target one side on said outer magnet and the said inner magnet is opposite; Said center magnet group is that rotating shaft rotatablely moves as circumference with the target center under the driving of central drive mechanism, perhaps, does the orbital path motion around target center.
Wherein, said center magnet group comprises a plurality of small magnets that are arranged on the fan, and the N of adjacent small magnet, S level are interlocked and arranged; Perhaps, be positioned on the small magnet of fan-shaped home position near the polarity near target one side on the pole polarity of target one side and the small magnet that is arranged in fan-shaped other position opposite; Said center magnet group is that rotating shaft rotatablely moves as circumference with the target center under the driving of central drive mechanism.
Wherein, Said center magnet group comprises two middle center magnet groups; Said two middle center magnet groups comprise an inner magnet respectively and around a plurality of outer magnets of said inner magnet, and the polarity near the magnetic pole of target one side on said outer magnet and the said inner magnet is opposite; Said two middle center magnet groups are that rotating shaft rotatablely moves as circumference with the target center.
Wherein, said center magnet group and edge magnets group are that rotating shaft carries out synchronous circumference and rotatablely moves with said target center under the driving of said driving mechanism.
Wherein, said center magnet group and edge magnets group are respectively in self-movement and uncorrelated mutually in magnetic control subregion separately under the driving of said central drive mechanism and edge driving mechanism.
In addition, the present invention also provides a kind of thin film deposition process equipment, comprises processing chamber and is arranged on the target of processing chamber top, above said target, is provided with the magnetron that the invention described above provides, in order to form equally distributed magnetic field at said target material surface.
Wherein, said thin film deposition process equipment is Pvd equipment.
The present invention has following beneficial effect:
At first; Magnetron provided by the invention, have center magnetic control subregion and edge magnetic control subregion, be separately positioned in center magnetic control subregion and the edge magnetic control subregion the magnet group and can be synchronously or the driving mechanism that in magnetic control subregion separately, moves of the said center magnet group of drive and edge magnets group along desired trajectory.Magnetron provided by the invention; Can carry out independent control to the ruuning situation of the magnet group in target center and the fringe region according to the actual process needs; When the metallic atom ionization level of target edge or central area hangs down; Can be through the speed of service, the scanning density of taking to strengthen this regional driving mechanism and the mode that increases number of magnets and density etc.; Obtain more target power in the lower zone of original metallic atom ionization level and make, thereby improve the metallic atom ionization level this zone in, and then avoid occurring asymmetric etc. the problem of the regional hole filling thickness of substrate edge.
Its two, magnetron provided by the invention is owing to have center magnetic control subregion and edge magnetic control subregion, and can control respectively the movement locus of the magnet group in center magnetic control subregion and the edge magnetic control subregion.Therefore, when being applied to 450mm and larger sized substrate sputtering technology, though the area of whole target increases to some extent, the area in the target zone that center magnetic control subregion and edge magnetic control section post are corresponding is also little.Therefore, when utilizing magnetron provided by the invention to carry out sputtering technology, need not to improve the speed of service of each magnet group, thereby can effectively guarantee the scanning accuracy of magnet group; And; Under the prerequisite that does not improve sweep speed; Still can in the short scan period, accomplish scanning, thereby in technical process, guarantee, and then guarantee uniformity and the symmetry that the substrate hole is filled the Ionized uniformity of metallic atom in each zone of target to whole target zone.
In addition; In a preferred embodiment of the invention; Through parameters such as edge magnetic control subregion and the number of magnets in the magnetic control subregion of center of adjustment magnetron, the density of arranging, the Distribution of Magnetic Field of may command target material surface and power density distribution, thus make target power concentrate on the target fringe region more; With the ionization effect of enhancing, and then improve the uniformity and the symmetry of the hole filling in substrate edge zone to the metallic atom of target fringe region.
As another kind of technical scheme; Thin film deposition process equipment provided by the invention, owing in its processing chamber, adopted the magnetron that the invention described above provided, therefore; It equally can be under the prerequisite that guarantees magnet group running precision; Effectively improve the metallic atom ionization level in the target as sputter process, especially can effectively improve the metallic atom ionization level of target fringe region, thereby improve the uniformity and the symmetry of the hole filling in substrate edge zone.
Description of drawings
The phenomenon sketch map is hung in the top-hung that Fig. 1 is occurred when for employing conventional sputter technology the hole of high-aspect-ratio being filled;
Fig. 2 is the principle schematic of magnetron sputtering technique;
Fig. 3 be in the middle of the sputtering technology not ionizable metallic atom to the filling sketch map of substrate hole;
Fig. 4 is present existing a kind of magnetron structures sketch map;
Fig. 5 is the movement locus sketch map of the magnet group in the magnetron of structure shown in Figure 4;
Fig. 6 is the structural representation of first kind of specific embodiment of magnetron provided by the invention;
Fig. 7 is the structural representation of the center magnet group 106 in the magnetron shown in Figure 6;
Fig. 8, Fig. 9, Figure 11 and Figure 12 are respectively second kind of structural representation to the 5th kind of specific embodiment of magnetron provided by the invention; And
Figure 10 is the sketch map of another kind of magnet arrangement mode of the center magnet group 106 of magnetron shown in Figure 9.
Embodiment
For making those skilled in the art understand technical scheme of the present invention better, magnetron provided by the invention and the thin film deposition process equipment of using this magnetron are described in detail below in conjunction with accompanying drawing.
Magnetron provided by the present invention is used in plasma sputtering technology, makes target material surface form equally distributed magnetic field, thereby improves the ionization level of metallic atom.Said magnetron comprises: center magnetic control subregion, and it has the center magnet group that applies magnetic field corresponding to the target center zone; Edge magnetic control subregion, it is provided with around center magnetic control subregion, and has the edge magnets group that applies magnetic field corresponding to the target fringe region; Driving mechanism; It comprises central drive mechanism that is connected with the center magnet group and the edge driving mechanism that is connected with the edge magnets group; Central drive mechanism and edge driving mechanism can be synchronously or drive the center magnet group independently and the edge magnets group is moved along projected path in magnetic control subregions separately, to form equally distributed magnetic field at the central area and the fringe region of target respectively.
In practical application, can above-mentioned center magnet group, edge magnets group and driving mechanism be arranged in the special-purpose housing.Central drive mechanism and edge driving mechanism comprise respectively: the mechanical parts such as CD-ROM drive motor, bearing, drive link and travelling gear that are used to provide power; Center magnet group and edge magnets group are connected with the drive link or the travelling gear of central drive mechanism and edge driving mechanism respectively, and under the drive of CD-ROM drive motor, move according to projected path.Particularly, can make center magnet group and the synchronous operation of edge magnets group, also can make the two with running orbit with certain correlation independent operating, perhaps, can also make the two with diverse running orbit independent operating.
See also Fig. 6, be the structural representation of first kind of specific embodiment of magnetron provided by the invention.The central drive mechanism of magnetron is one group of transmission mechanism with asteroid track, comprise with the center fixed gear 101 of the concentric setting of target, pass center fixed gear 101 the center and can around the center drive link 102 of this center rotation, be arranged on center drive link 102 other ends and with the planetary gear 103 of center fixed gear engagement, center magnet group 106 and the counterweight 104 that is fixed on the Gear Planet Transmission bar 105 on the planetary gear 103 and is separately positioned on Gear Planet Transmission bar 105 two ends.Its running is: center drive link 102 rotates; Drive planetary gear 103 around 101 rotations of center fixed gear; Simultaneously since with the engagement of center fixed gear, autobiographies take place in planetary gear 103; And drive Gear Planet Transmission bar 105 rotation synchronously with it, thereby the center magnet group 106 that is positioned at Gear Planet Transmission bar 105 1 ends is moved along asteroid formula track.Here, counterweight 104 also can change another magnet group identical with center magnet group 106 into, and it is rotated around target center with asteroid formula track equally.
See also Fig. 7; Comprise an inner magnet 61 and a plurality of inner magnet 61 outer magnets 62 on every side that are looped around in the above-mentioned center magnet group 106; Each outer magnet 62 is identical near the pole polarity of target one side and be the N utmost point; And above-mentioned inner magnet 61 is the S utmost point in the pole polarity near target one side, and is opposite with each outer magnet 62.It is pointed out that in the present embodiment that the quantity of outer magnet 62 is 12, but the present invention is not limited thereto, those skilled in the art can choose arbitrarily the quantity of outer magnet 62 as required; And, also can make each outer magnet 62 be made as the S utmost point in pole polarity near target one side, be the N utmost point and make inner magnet 61 in pole polarity near target one side.
The edge magnets group of magnetron comprise be covered with edge magnetic control subregion 20 a plurality of radially with the small magnet of circumferential array, wherein, the N of adjacent small magnet, the S level is staggered arranges, thereby between adjacent small magnet, forms the magnetic field of sealing.Particularly; Each small magnet is radial arrangement along the target radial direction; And upwards form a plurality of annulars in week, and and the small magnet quantity on each annular is identical, each small magnet and its circumferentially are contrary in the polarity near the magnetic pole of target one side with the footpath adjacent small magnet that makes progress.Here; Arrangement mode for the small magnet in the edge magnets group is not limited thereto; For example can also make each small magnet form a plurality of annulars in the magnetic control subregion on the edge of; And circumferentially closely arranged in the small magnet edge in each annular, and the more small magnet of can on the bigger circumference of radius, arranging usually, thus the small magnet quantity on each annular is increased along with the increase of this annular radii.
Driving for the edge magnets group is simple relatively; Only need make the edge magnets group in the magnetic control subregion is that rotating shaft carries out circumference and rotatablely moves and get final product on the edge of with the target center; This rotatablely moves and can adopt clockwise mode; Also can adopt counterclockwise mode, the mode that can also adopt clockwise and hocket counterclockwise.At this moment, the driving mechanism mode that can adopt CD-ROM drive motor directly to drive center magnet group rotation in edge drives.
Need to prove; In magnetron provided by the present invention, the small magnet that gathers in center magnet group and the edge magnets group is cylinder, and these cylindrical two ends are the two poles of the earth of magnet; Because the magnetic field intensity of the near surface of magnetic pole is maximum; Therefore in installation process, the magnetic pole that makes small magnet usually is provided with over against the direction of target, to obtain stronger Distribution of Magnetic Field at target material surface as far as possible.
Above-mentioned magnetron is when carrying out sputtering technology, and its center magnet group 106 is being moved in the magnetic control subregion of center with orbital path under the drive of central drive mechanism; Simultaneously, the edge magnets group is carried out circumference around target center under the drive of driving mechanism on the edge of and is rotatablely moved.When needs increase the metallic atom ionization level of target center or fringe region; Arrange parameters such as density and increase the magnetic field intensity in this zone of the speed of service, the magnet that can suitably adjust this zone inner magnet group; Thereby the corresponding raising of the ionization level that makes metallic atom, and then in the good hole filling result of substrate surface acquisition.And; When magnetron provided by the invention is being applied to the sputtering technology of large scale (450mm and more than) substrate; Because the target area that the center magnetic control subregion of magnetron and edge magnetic control section post are corresponding is not big especially; Thereby the speed of service that need not significantly to improve the magnet group can guarantee to accomplish the scanning of magnetic control subregion separately within a short period of time, thereby both guaranteed the running precision of scanning, has the short scan period again; And then make each regional metallic atom ionization level of target keep all even stable in the assurance technical process, avoid the regional hole of substrate edge to fill the problem of asymmetric grade.
See also Fig. 8, be the structural representation of second kind of specific embodiment of magnetron provided by the invention.In the present embodiment, the central drive mechanism in the center magnetic control subregion 10 of magnetron and the structure of center magnet group are identical or similar with first kind of embodiment shown in Figure 7 with above-mentioned Fig. 6 with operational mode, do not repeat them here.
In the edge magnetic control subregion 20 that present embodiment provided; The edge magnets group comprises the sub-magnet group in a plurality of independently edges; The sub-magnet group in each edge comprises inner magnet again and around a plurality of outer magnets of inner magnet, and the polarity near the magnetic pole of target one side on outer magnet and the inner magnet is opposite, here; Therefore the similar of the center magnet group 106 in first kind of specific embodiment shown in the structure of the sub-magnet group in edge and above-mentioned Fig. 7 repeats no more.Certainly, the structure of the sub-magnet group in said edge can also have multiple modification, and the quantity of the sub-magnet group in edge also can have multiple choices.Present embodiment is compared with above-mentioned first kind of embodiment; The number of magnets of target fringe region top is less, and the transient magnetic field area of target material surface is less, therefore under equal power condition; The instantaneous power of overlay area, magnetic field is bigger, thereby can obtain higher relatively metallic atom ionization level.
Edge driving mechanism in the present embodiment specifically can comprise following two parts: one of which, be the edge main driving machine structure that rotating shaft rotatablely moves as circumference with the target center for driving the sub-magnet group in each edge; Be the edge secondary driving mechanism that rotation takes place at the center with separately inner magnet two, for driving the sub-magnet group in each edge.Here, described edge main driving machine structure and edge secondary driving mechanism can adopt multiple mechanical structure and realize, and these mechanical structures are known technology commonly used, thereby repeat no more.
In addition, the magnetron that present embodiment provides can effectively improve the metallic atom ionization level of target center and fringe region equally in actual process, thereby avoids occurring the problem of the regional asymmetric grade of hole filling thickness of substrate edge; And when being applied to large-sized substrate, need not to increase the magnet group speed of service, can guarantee the short scan period equally, thereby satisfy the requirement of sputtering technology.
See also Fig. 9, be the structural representation of the third specific embodiment of magnetron provided by the invention.The edge magnets group that is adopted in the present embodiment is identical or similar with above-mentioned first kind of embodiment shown in Figure 6.Difference is that the center magnet group 106 in this enforcement has the support of a sector structure, on this fan, is placed with a plurality of small magnets, and the N of adjacent small magnet, S level are interlocked and arranged.The radius of above-mentioned fan and the radius of center magnetic control subregion 10 equate or are slightly less than the radius of center magnetic control subregion 10.Said fan-shaped center magnet group 106 is that rotating shaft rotatablely moves as circumference with the target center under the driving of central drive mechanism; Particularly; The small magnet that is positioned at fan-shaped home position is overlapped with target center; Making this fan-shaped center magnet group 106 do circumference around the center of circle of himself then rotatablely moves; Whenever rotate a circle promptly and to accomplish once the scanning to whole center magnetic control subregion 10, this center magnet group 106 used duration that rotates a circle is scan period of center magnetic control subregion 10.Compare the operational mode of the asteroid track in the foregoing description, the operation stability of the center magnet group in the present embodiment can be more better.In addition; Arrangement mode to each small magnet in the center magnet group in the present embodiment can also have multiple modification, for example makes on the small magnet that is positioned at fan-shaped home position near the pole polarity of target one side on the contrary with the small magnet that is arranged in fan-shaped other position, specifically can be arrangement mode shown in Figure 10; Promptly; The N utmost point of the small magnet that is positioned at the fan-shaped home position and the contiguous center of circle is provided with towards the target direction, and the S utmost point of the small magnet of fan-shaped other position is provided with towards the target direction, particularly; The N utmost point that can make three small magnets that are positioned at zone, the fan-shaped center of circle is towards target, and the S utmost point that makes the small magnet beyond the zone, the fan-shaped center of circle is towards target.The difference of Fig. 9 and two kinds of arrangement modes shown in Figure 10 is that formed Distribution of Magnetic Field is slightly different, is specially, and adjacent small magnet can carry out closure with the formed magnetic field of magnet group that N, S level interlace mode are arranged between each adjacent small magnet; The formed magnetic field of magnet group shown in Figure 10 is then closed between the small magnet in center of circle zone and the small magnet beyond the zone, the center of circle.Except that the structure of center magnet group with operational mode is different, present embodiment and above-mentioned first kind of embodiment have same advantage.
See also Figure 11, be the structural representation of the 4th kind of specific embodiment of magnetron provided by the invention.Center magnet group 106 in the present embodiment comprises two middle center magnet groups (106a as shown in the figure and 106b); Said two middle center magnet groups respectively comprise an inner magnet and around a plurality of outer magnets of said inner magnet; Polarity near the magnetic pole of target one side on said outer magnet and the said inner magnet is opposite; Particularly, the structure of above-mentioned two middle center magnet groups is identical or similar with magnet group structure shown in Figure 7.In the course of the work, these two middle center magnet groups are that rotating shaft rotatablely moves as circumference with the target center.Certainly, the center magnet group 106 in the present embodiment also can only keep a middle center magnet group, and the counter weight construction of equal volume and weight is removed or changed into to center magnet group in another.It is to be noted; The middle center magnet group that is adopted in this enforcement also can adopt other structure, for example adopts the fan-shaped center magnet group shown in Fig. 9 and Figure 10, particularly; Can make two fan-shaped be the symmetrical centre setting with the target center, and be rotated around target center.
See also Figure 12, be the structural representation of the 5th kind of specific embodiment of magnetron provided by the invention.Edge magnetic control subregion in this enforcement is identical or similar with the edge magnetic control subregion of above-mentioned first kind of embodiment shown in Figure 6, thereby repeats no more.In the present embodiment, the center magnet group is a kind of structure of the small magnet that in center magnetic control subregion 10, gathers, and the N of each adjacent small magnet, S is extremely staggered arranges.When operate as normal, this center magnet group is that rotating shaft rotatablely moves as circumference with the target center, in the present embodiment; Can make center magnet group and edge magnets group is that rotating shaft carries out synchronous circumference and rotatablely moves with the target center; Certainly, also can make the rotation of the two asynchronous, perhaps make the two along opposite reverse rotation; Perhaps, the two is rotated etc. in opposite direction all can with different rotating speed.That is to say, can make center magnet group and edge magnets group respectively in self-movement and uncorrelated mutually in magnetic control subregion separately under the driving of central drive mechanism and edge driving mechanism.
Because target power can be in the Distribution of Magnetic Field regional centralized; And center magnet group in the present embodiment and edge magnets group are the structure of the small magnet that gathers; Therefore in technical process; Target power can and be arranged density and between target center and edge, distributes according to the quantity of the small magnet in center magnet group and the edge magnets group, that is to say, if hope that target power density that fringe region obtains is higher; Just can arrange the edge magnets group closeer, and make the quantity of small magnet in the edge magnets group more.
In sum; Magnetron provided by the invention is owing to have center magnetic control subregion and the edge magnetic control subregion that can control respectively; Therefore not only can effectively improve the metallic atom ionization level of target center or fringe region; And when being applied to the sputtering technology of large size substrate; The speed of service that need not significantly to improve the magnet group also can guarantee the short scan period, thereby has effectively improved the uniformity to the large-size target sputter, and then has guaranteed uniformity and symmetry that each regional hole of substrate is filled.In addition; In some preferred embodiments; Can also be through parameters such as the number of magnets in adjustment edge magnetic control subregion and the center magnetic control subregion, the density of arranging; And the Distribution of Magnetic Field and the power density distribution of control target material surface, thereby make target power concentrate on the target fringe region more, to strengthen ionization effect to the metallic atom of target fringe region.
It is to be noted; In practical application; Can also a kind of two-region target with central area and fringe region be set accordingly for magnetron provided by the invention; And make the central area of this two-region target corresponding with the center magnetic control subregion of magnetron, make the fringe region of two-region target corresponding with the edge magnetic control subregion of magnetron.At this moment, can load different power supplys and select different power with fringe region for the central area of two-region target, to control the metallic atom ionization level at target edge and center better.Wherein, be loaded on target center power supply type regional and fringe region and comprise DC power supply, pulse dc power, intermediate frequency power supply or radio-frequency power supply.
As another kind of technical scheme; The present invention also provides a kind of thin film deposition process equipment; It comprises processing chamber and is arranged on the target of processing chamber top, above said target, is provided with the magnetron that the invention described above provides, in order to form equally distributed magnetic field at said target material surface.In practical application, this thin film deposition process equipment specifically can be a kind of Pvd equipment, more specifically, can be a kind of plasma sputtering treatment facility.
Based on same reason; Thin film deposition process equipment provided by the invention can make target center or fringe region obtain higher metallic atom ionization level equally; Thereby each regional hole of substrate all can well be filled, and can satisfy the sputtering technology requirement of large size substrate.
It is understandable that above execution mode only is the illustrative embodiments that adopts for principle of the present invention is described, yet the present invention is not limited thereto.For the one of ordinary skilled in the art, under the situation that does not break away from spirit of the present invention and essence, can make various modification and improvement, these modification also are regarded as protection scope of the present invention with improving.
Claims (11)
1. a magnetron is used for forming equally distributed magnetic field at target material surface, it is characterized in that said magnetron comprises:
Center magnetic control subregion, it has the center magnet group that applies magnetic field corresponding to the target center zone;
Edge magnetic control subregion, it is provided with around said center magnetic control subregion, has the edge magnets group that applies magnetic field corresponding to the target fringe region;
Driving mechanism; It comprises central drive mechanism that is connected with said center magnet group and the edge driving mechanism that is connected with said edge magnets group; Said central drive mechanism and edge driving mechanism can be synchronously or drive said center magnet group independently and the edge magnets group is moved along projected path in magnetic control subregions separately, to form equally distributed magnetic field at the central area and the fringe region of said target respectively.
2. magnetron according to claim 1 is characterized in that, said edge magnets group comprises the small magnet of radially a plurality of and/or circumferential array and be covered with said edge magnetic control subregion that wherein, the N of adjacent small magnet, S level are interlocked and arranged; Said edge magnets group is that rotating shaft rotatablely moves as circumference with the target center under the driving of said edge driving mechanism.
3. magnetron according to claim 1; It is characterized in that; Said edge magnets group comprises the sub-magnet group in a plurality of independently edges; The sub-magnet group in each edge comprises inner magnet again and around a plurality of outer magnets of said inner magnet, and the polarity near the magnetic pole of target one side on said outer magnet and the said inner magnet is opposite; The sub-magnet group in each edge is that rotating shaft rotatablely moves as circumference with the target center under the driving of driving mechanism on the edge of.
4. magnetron according to claim 1 is characterized in that, said center magnet group comprises the small magnet of radially a plurality of and/or circumferential array and be covered with said center magnetic control subregion that wherein, the N of adjacent small magnet, S level are interlocked and arranged; Said center magnet group is that rotating shaft rotatablely moves as circumference with the target center under the driving of central drive mechanism.
5. magnetron according to claim 1 is characterized in that, said center magnet group comprises an inner magnet and around a plurality of outer magnets of said inner magnet, and the polarity near the magnetic pole of target one side on said outer magnet and the said inner magnet is opposite; Said center magnet group is that rotating shaft rotatablely moves as circumference with the target center under the driving of central drive mechanism, perhaps, does the orbital path motion around target center.
6. magnetron according to claim 1 is characterized in that, said center magnet group comprises a plurality of small magnets that are arranged on the fan, and the N of adjacent small magnet, S level are interlocked and arranged; Perhaps, be positioned on the small magnet of fan-shaped home position near the polarity near target one side on the pole polarity of target one side and the small magnet that is arranged in fan-shaped other position opposite; Said center magnet group is that rotating shaft rotatablely moves as circumference with the target center under the driving of central drive mechanism.
7. magnetron according to claim 1; It is characterized in that; Said center magnet group comprises two middle center magnet groups; Said two middle center magnet groups comprise an inner magnet respectively and around a plurality of outer magnets of said inner magnet, and the polarity near the magnetic pole of target one side on said outer magnet and the said inner magnet is opposite; Said two middle center magnet groups are that rotating shaft rotatablely moves as circumference with the target center.
8. magnetron according to claim 1 is characterized in that, said center magnet group and edge magnets group are that rotating shaft carries out synchronous circumference and rotatablely moves with said target center under the driving of said driving mechanism.
9. magnetron according to claim 1 is characterized in that, the self-movement and uncorrelated mutually in magnetic control subregion separately under the driving of said central drive mechanism and said edge driving mechanism respectively of said center magnet group and edge magnets group.
10. thin film deposition process equipment; Comprise processing chamber and be arranged on the target of processing chamber top; It is characterized in that, above said target, be provided with any described magnetron among the claim 1-9, in order to form equally distributed magnetic field at said target material surface.
11. thin film deposition process equipment according to claim 10 is characterized in that, said thin film deposition process equipment is Pvd equipment.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201010224956.1A CN102315064B (en) | 2010-07-02 | 2010-07-02 | Magnetron and thin film deposition treatment equipment applying same |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010224956.1A CN102315064B (en) | 2010-07-02 | 2010-07-02 | Magnetron and thin film deposition treatment equipment applying same |
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| CN102315064A true CN102315064A (en) | 2012-01-11 |
| CN102315064B CN102315064B (en) | 2014-07-30 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113249701A (en) * | 2021-06-25 | 2021-08-13 | 上海陛通半导体能源科技股份有限公司 | Ionization PVD equipment capable of improving filling uniformity |
| CN113699495A (en) * | 2021-06-21 | 2021-11-26 | 北京北方华创微电子装备有限公司 | Magnetron sputtering component, magnetron sputtering equipment and magnetron sputtering method |
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| US6497802B2 (en) * | 1999-02-12 | 2002-12-24 | Applied Materials, Inc. | Self ionized plasma sputtering |
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| US5126029A (en) * | 1990-12-27 | 1992-06-30 | Intel Corporation | Apparatus and method for achieving via step coverage symmetry |
| US5795451A (en) * | 1997-06-12 | 1998-08-18 | Read-Rite Corporation | Sputtering apparatus with a rotating magnet array |
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| CN113699495B (en) * | 2021-06-21 | 2023-12-22 | 北京北方华创微电子装备有限公司 | Magnetron sputtering assembly, magnetron sputtering equipment and magnetron sputtering method |
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|---|---|
| CN102315064B (en) | 2014-07-30 |
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