JPH0662741B2 - Epoxy resin composition for semiconductor encapsulation - Google Patents
Epoxy resin composition for semiconductor encapsulationInfo
- Publication number
- JPH0662741B2 JPH0662741B2 JP61210543A JP21054386A JPH0662741B2 JP H0662741 B2 JPH0662741 B2 JP H0662741B2 JP 61210543 A JP61210543 A JP 61210543A JP 21054386 A JP21054386 A JP 21054386A JP H0662741 B2 JPH0662741 B2 JP H0662741B2
- Authority
- JP
- Japan
- Prior art keywords
- epoxy resin
- resin composition
- glass
- semiconductor encapsulation
- filler
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、熱衝撃を受けた場合の信頼性に優れるエポキ
シ樹脂組成物に係り、その特徴は内部に空洞を有する脆
いガラスを充填材の一部として用い熱ストレスを吸収さ
せるところにある。Description: TECHNICAL FIELD The present invention relates to an epoxy resin composition having excellent reliability when subjected to thermal shock, which is characterized in that a brittle glass having voids inside is used as a filler. It is used as a part to absorb heat stress.
従来の半導体の一般的な評価方法は、高温高湿条件にお
ける耐湿性テスト及び冷熱衝撃サイクルテストである。
これらは一般使用条件の加速テストとして利用されてお
り、主として２気圧100％RH条件での耐湿性評価や−65
℃と150℃の間での熱衝撃評価が実施されている。半導
体封止用エポキシ樹脂組成物も上記評価に対して寿命を
向上させるように改良されてきた。Conventional general evaluation methods for semiconductors are a humidity resistance test and a thermal shock cycle test under high temperature and high humidity conditions.
These are used as accelerated tests under general use conditions, and are mainly used for moisture resistance evaluation under 2 atm 100% RH conditions and -65.
Thermal shock evaluation between ℃ and 150 ℃ has been conducted. The epoxy resin composition for semiconductor encapsulation has also been improved so as to improve the life with respect to the above evaluation.
しかし、最近半導体の実装方法として半田浴に半導体及
び基板を浸漬させるという合理化方法が一部で実施され
今後かなり汎用化が予想される状況となってきた。However, recently, as a semiconductor mounting method, a rationalization method of immersing a semiconductor and a substrate in a solder bath has been partially implemented, and it is expected to be widely used in the future.
現在、従来の半導体封止用エポキシ樹脂組成物で対応し
ているが半田浸漬後の信頼性が大幅に低下するという問
題を抱えている。例えば、耐湿性が極端に劣化したり特
性変動を起こしたりすることが報告されている。従来材
の品質設計時に想定した条件とは全く異る急激な熱衝撃
が加わるため一室温から260℃まで数秒で熱変化するた
め対応しきれない状態になっている。Currently, the conventional epoxy resin composition for semiconductor encapsulation is used, but there is a problem that the reliability after immersion in solder is significantly lowered. For example, it has been reported that the humidity resistance is extremely deteriorated or the characteristics are changed. Since a sudden thermal shock, which is completely different from the condition assumed when designing the quality of conventional materials, is applied, the heat changes from one room temperature to 260 ° C in a few seconds, so it is not possible to deal with it.
そこで、半田浸漬実装法に対応する半導体封止用エポキ
シ樹脂組成物の開発が市場から強く要求されている。Therefore, there is a strong demand from the market to develop an epoxy resin composition for semiconductor encapsulation that is compatible with the solder immersion mounting method.
従来の低応力エポキシ樹脂組成物に関する技術として
は、液状合成ゴムもしくはこれらの変性品を添加する方
法が知られている（例、特開昭53−144958、特開昭57−
180626、特開昭58−174416）、又シリコーン類もしくは
これらの変性品を添加する方法も知られている（例、特
開昭56−129246、特開昭58−47014）。しかし、これら
の方法はいずれも成形性や耐湿性に重大な問題を有して
いた。さらにシリコーン類を使用する場合には価格が高
くなりすぎ汎用として使用できないという問題を有して
いた。As a conventional technique relating to a low stress epoxy resin composition, a method of adding a liquid synthetic rubber or a modified product thereof is known (eg, JP-A-53-144958 and JP-A-57-57).
180626, JP-A-58-174416), and a method of adding silicones or modified products thereof (eg, JP-A-56-129246, JP-A-58-47014). However, all of these methods have serious problems in moldability and moisture resistance. Further, when silicones are used, there is a problem that the price becomes too high to be used as a general purpose.
本発明は、従来材料では不可能であった半田浸漬時の熱
衝撃に耐える材料を目的として研究した結果、内部に適
度の空洞を有するガラスを適量使用することにより急激
な熱衝撃を吸収できるだけでなく従来の特性も保持でき
る物質・機構を見い出し、市場で適用できる材料を完成
したものである。The present invention has been studied for the purpose of a material that can withstand thermal shock during solder immersion, which was impossible with conventional materials. We have found a substance / mechanism that retains the conventional properties, and completed a material that can be applied in the market.
エポキシ樹脂、硬化剤、硬化促進剤、充填材からなるエ
ポキシ樹脂組成物において、内部に空洞を有するガラス
を充填材の１／10〜２／３（重量比）含むことを特徴と
する半導体封止用エポキシ樹脂組成物であり、好ましく
は空洞の一つの大きさが、ガラス径の８／10以下、且つ
50μｍ以下であり、又は空洞の全体積がガラス体積の１
／10〜７／10である。An epoxy resin composition comprising an epoxy resin, a curing agent, a curing accelerator, and a filler, wherein glass having a cavity inside is contained in 1/10 to 2/3 (weight ratio) of the filler. An epoxy resin composition for use, wherein the size of one of the cavities is 8/10 or less of the glass diameter, and
50 μm or less, or the total volume of cavities is 1 glass volume
/ 10 to 7/10.
本発明は、エポキシ樹脂、硬化剤、硬化促進剤、内部に
空洞を有するガラス充填材を必須とし、必要に応じて難
燃剤、処理剤、顔料、離型剤その他の添加剤を配合した
ものである。半導体の封止を目的としているので不純物
は少ない方が好ましく例えば試料5gを純水95gで125℃・
20時間抽出した時の抽出水電導度が80μｓ／cm以下が望
ましい。The present invention requires an epoxy resin, a curing agent, a curing accelerator, and a glass filler having a cavity inside, and optionally contains a flame retardant, a treating agent, a pigment, a release agent and other additives. is there. Since it is intended for semiconductor encapsulation, it is preferable that the amount of impurities be small.
It is desirable that the electric conductivity of the extracted water after extraction for 20 hours is 80 μs / cm or less.
エポキシ樹脂とは、エポキシ基を有するもの全般のこと
をいい、例えばビスフェノール型エポキシ・フェノール
ノボラック型エポキシ樹脂・複素環型エポキシ樹脂とい
った一般名を挙げることができる。The epoxy resin refers to all resins having an epoxy group, and examples thereof include common names such as bisphenol type epoxy / phenol novolac type epoxy resin / heterocyclic epoxy resin.
硬化剤とは、フェノールノボラック樹脂をいう。The curing agent refers to phenol novolac resin.
硬化促進剤とは、エポキシ樹脂組成物の硬化を促進させ
る触媒全般のことをいい、例えばイミダゾール類・第３
級アミン類・有機リン化合物・有機アルミニウム化合物
といった一般名を挙げることができる。The curing accelerator refers to all catalysts that accelerate the curing of the epoxy resin composition, for example, imidazoles
Common names such as primary amines, organic phosphorus compounds, and organic aluminum compounds can be mentioned.
充填材としては、シリカ・マイカ・ガラス・クレー・ア
スベスト・アルミナ等を挙げることができる。この中で
も特にシリカが好ましい。Examples of the filler include silica, mica, glass, clay, asbestos, alumina and the like. Of these, silica is particularly preferable.
本発明の空洞を有するガラス（以下、中空ガラスと称す
る）は、内部に空洞を有するガラス状物質全てのことを
いう。The glass having a cavity of the present invention (hereinafter referred to as hollow glass) refers to all glassy substances having a cavity inside.
具体的な製造メーカーとしては、日本板硝子・日本電気
硝子・旭硝子・セントラル硝子等を挙げることができ
る。Specific manufacturers include Nippon Sheet Glass, Nippon Electric Glass, Asahi Glass, Central Glass and the like.
中空ガラスの空洞としては、大きさがガラス径の８／10
以下で且つ100μｍ以下又体積がガラス体積の１／10〜
７／10であることが好ましい。空洞が多きすぎても又少
なすぎても多すぎても悪影響を及ぼす場合がある。例え
ば、大きすぎたり、多すぎると強度や耐湿性が低下した
り又少なすぎると耐熱衝撃性が悪くなったりすることも
ある。中空ガラスの使用量としては、充填材の１／10〜
２／３（重量比）であることが好ましい。少なすぎると
耐熱衝撃性が悪くなったり、多すぎると強度や耐湿性が
低下したりすることもある。The size of the hollow glass cavity is 8/10 of the glass diameter.
Or less and 100 μm or less, and the volume is 1/10 to the glass volume
It is preferably 7/10. Too many cavities, too few cavities, or too many cavities may have an adverse effect. For example, if it is too large or too large, the strength and moisture resistance may decrease, and if it is too small, the thermal shock resistance may deteriorate. The amount of hollow glass used is 1/10 of the filler
It is preferably 2/3 (weight ratio). If it is too small, the thermal shock resistance may deteriorate, and if it is too large, the strength and moisture resistance may decrease.
本発明に従うと半田浸漬といった厳しい実装条件でも従
来同等以上の信頼性を保持するエポキシ樹脂封止半導体
が得られる。即ち、大量生産・低コストを目的とした合
理化合物実装法−半田浸漬−が可能となりさらに半導体
を汎用のものとすることが達成できた。現在でも半導体
は日常生活の中で一般的に使用されているが、本発明に
より今後さらに半導体は汎用化し生活水準向上に役立つ
ことが期待できる。According to the present invention, it is possible to obtain an epoxy resin-encapsulated semiconductor that retains reliability equal to or higher than that of conventional products even under severe mounting conditions such as solder immersion. That is, the rational compound mounting method-solder dipping-for the purpose of mass production and low cost was made possible, and it was possible to achieve the general-purpose semiconductor. Even now, semiconductors are generally used in daily life, but it can be expected that the present invention will make the semiconductors more versatile in the future and help improve the standard of living.
以下、半導体封止用成形材料での検討例で説明する。検
討例で用いた部は全て重量部である。又、使用した原料
は次の通りである。Hereinafter, description will be made on a study example of a molding material for semiconductor encapsulation. All parts used in the study examples are parts by weight. The raw materials used are as follows.
従来の低応力添加剤 (A) 信越化学工業 KF−100 (B) 宇部興産 CTBN1300 検討例 エポキシ樹脂20部、硬化剤10部、充填材（70−ｘ）部、
中空ガラス（日本板硝子（株）製）ｘ部、硬化促進剤0.
2部、表面処理剤0.5部、顔料0.5部、離型剤0.5部、従来
の低応力添加剤ｙを表−２に従って混合後100℃の熱ロ
ールで３分間混練し、半導体封止用成形材料８種を得
た。これら材料の特性及び模擬ICの特性に関する評価結
果を表−２に示す。表−２より明らかなように本発明の
中空ガラスを用いることにより半田浸漬後の特性が大幅
に向上する。特に、好ましい範囲で用いた場合には抜群
の効果がある。 Conventional low stress additive (A) Shin-Etsu Chemical KF-100 (B) Ube Industries CTBN1300 Examination example Epoxy resin 20 parts, curing agent 10 parts, filler (70-x) part,
Hollow glass (manufactured by Nippon Sheet Glass Co., Ltd.) x part, curing accelerator 0.
2 parts, surface treatment agent 0.5 part, pigment 0.5 part, release agent 0.5 part and conventional low stress additive y are mixed according to Table-2 and then kneaded for 3 minutes on a hot roll at 100 ° C. to form a molding material for semiconductor encapsulation. 8 kinds were obtained. Table 2 shows the evaluation results regarding the characteristics of these materials and the characteristics of the simulated IC. As is clear from Table 2, by using the hollow glass of the present invention, the characteristics after solder immersion are significantly improved. In particular, when used in a preferable range, it has an outstanding effect.
フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 23/31 Continuation of the front page (51) Int.Cl. 5 Identification code Office reference number FI technical display location H01L 23/31
Claims (3)
材からなるエポキシ樹脂組成物において、内部に空洞を
有するガラスを充填材の１／10〜２／３（重量比）含む
ことを特徴とする半導体封止用エポキシ樹脂組成物。1. An epoxy resin composition comprising an epoxy resin, a curing agent, a curing accelerator, and a filler, wherein glass having a cavity inside is contained at 1/10 to 2/3 (weight ratio) of the filler. The epoxy resin composition for semiconductor encapsulation.
下、且つ50μｍ以下であることを特徴とする特許請求の
範囲第（１）項記載の半導体封止用エポキシ樹脂組成
物。2. The epoxy resin composition for semiconductor encapsulation according to claim 1, wherein the size of one cavity is 8/10 or less of the glass diameter and 50 μm or less.
10であることを特徴とする特許請求の範囲第（１）項又
は第（２）項記載の半導体封止用エポキシ樹脂組成物。3. The total volume of the cavities is 1/10 to 7 / of the glass volume.
The epoxy resin composition for semiconductor encapsulation according to claim (1) or (2), wherein the epoxy resin composition is 10.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61210543A JPH0662741B2 (en) | 1986-09-09 | 1986-09-09 | Epoxy resin composition for semiconductor encapsulation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61210543A JPH0662741B2 (en) | 1986-09-09 | 1986-09-09 | Epoxy resin composition for semiconductor encapsulation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6366220A JPS6366220A (en) | 1988-03-24 |
| JPH0662741B2 true JPH0662741B2 (en) | 1994-08-17 |
Family
ID=16591083
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61210543A Expired - Fee Related JPH0662741B2 (en) | 1986-09-09 | 1986-09-09 | Epoxy resin composition for semiconductor encapsulation |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0662741B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0282644A (en) * | 1988-09-20 | 1990-03-23 | Fujitsu Ltd | Semiconductor device |
| DE69909274T2 (en) | 1998-04-06 | 2004-05-27 | Miyawaki, Fujio, Fujimi | MECHANICAL AUXILIARY HEART FOR RESTORING HEART FUNCTION |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53102361A (en) * | 1977-02-18 | 1978-09-06 | Toray Silicone Co Ltd | Thermosetting resin composition |
| JPS5823853A (en) * | 1981-08-03 | 1983-02-12 | Matsushita Electric Works Ltd | Molding material of thermosetting resin |
| JPS5857463A (en) * | 1981-10-01 | 1983-04-05 | Matsushita Electric Works Ltd | Thermosetting resin molding material |
| JPS5993716A (en) * | 1982-11-20 | 1984-05-30 | Nitto Electric Ind Co Ltd | Thermosetting molding resin composition |
-
1986
- 1986-09-09 JP JP61210543A patent/JPH0662741B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6366220A (en) | 1988-03-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |