JPH066000A - Ceramic wiring board - Google Patents
Ceramic wiring boardInfo
- Publication number
- JPH066000A JPH066000A JP4164689A JP16468992A JPH066000A JP H066000 A JPH066000 A JP H066000A JP 4164689 A JP4164689 A JP 4164689A JP 16468992 A JP16468992 A JP 16468992A JP H066000 A JPH066000 A JP H066000A
- Authority
- JP
- Japan
- Prior art keywords
- wiring conductor
- wiring board
- layer
- ceramic
- semiconductor element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
Landscapes
- Parts Printed On Printed Circuit Boards (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は半導体素子が搭載される
回路配線基板や半導体素子を収容する半導体素子収納用
パッケージに好適に使用されるセラミック配線基板に関
するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a ceramic wiring board suitable for use in a circuit wiring board on which a semiconductor element is mounted and a semiconductor element housing package for housing the semiconductor element.
【０００２】[0002]
【従来の技術】従来、半導体素子が搭載される回路配線
基板や半導体素子を収容する半導体素子収納用パッケー
ジ等に使用されるセラミック配線基板は電気絶縁性に優
れた酸化アルミニウム焼結体から成る絶縁基体と、該絶
縁基体の表面に被着されたタングステン、モリブデン、
マンガン等から成る配線導体とにより構成されている。2. Description of the Related Art Conventionally, a ceramic wiring board used for a circuit wiring board on which a semiconductor element is mounted, a semiconductor element housing package for housing the semiconductor element, or the like is made of an aluminum oxide sintered body excellent in electrical insulation. A substrate and tungsten, molybdenum deposited on the surface of the insulating substrate,
The wiring conductor is made of manganese or the like.
【０００３】かかる従来のセラミック配線基板は一般
に、まず酸化アルミニウム粉末に有機溶剤、溶媒を添加
混合して泥漿状となすとともにこれをシート状に成形し
てセラミックグリーンシートを形成し、次に、タングス
テン、モリブデン、マンガン等の金属粉末に適当な有機
溶剤、溶媒を添加混合して得た金属ペーストを前記セラ
ミックグリーンシート表面にスクリーン印刷法等の厚膜
形成技術により所定パターンに印刷塗布し、最後に、前
記金属ペーストが所定パターンに印刷塗布されたセラミ
ックグリーンシートを還元雰囲気中、約1600℃の温度で
焼成し、酸化アルミニウム粉末とタングステン、モリブ
デン等の金属粉末とを焼成一体化させることによって製
作される。In general, such a conventional ceramic wiring board is prepared by first adding an organic solvent and a solvent to aluminum oxide powder to form a slurry and molding this into a sheet to form a ceramic green sheet, and then a tungsten. , A suitable organic solvent to a metal powder such as molybdenum, manganese, etc., a metal paste obtained by adding and mixing a solvent is printed and applied in a predetermined pattern on the surface of the ceramic green sheet by a thick film forming technique such as screen printing, and finally. The ceramic green sheet on which the metal paste is printed and applied in a predetermined pattern is fired at a temperature of about 1600 ° C. in a reducing atmosphere, and aluminum oxide powder and metal powders such as tungsten and molybdenum are fired and integrated. It
【０００４】尚、前記セラミック配線基板は通常、タン
グステン等から成る配線導体の表面に金層が間にニッケ
ル層を介して被着されており、該金層によって配線導体
の酸化腐食が有効に防止されているとともに配線導体と
半導体素子の各電極との電気的接続が良好なものとなっ
ている。In the above-mentioned ceramic wiring board, a gold layer is usually deposited on the surface of a wiring conductor made of tungsten or the like with a nickel layer interposed therebetween, and the gold layer effectively prevents oxidative corrosion of the wiring conductor. In addition, the electrical connection between the wiring conductor and each electrode of the semiconductor element is good.
【０００５】また前記配線導体と金層との間に介在され
るニッケル層は配線導体を構成するタングステン、モリ
ブデン等と金層との接合性が悪く、両者を直接強固に被
着接合させることができないため両者を強固に接合させ
るための密着層として作用する層である。Further, the nickel layer interposed between the wiring conductor and the gold layer is poor in the bondability between the gold layer and the tungsten, molybdenum, etc. constituting the wiring conductor, so that both can be directly and firmly adhered to each other. Since it is not possible, it is a layer that acts as an adhesion layer for firmly bonding the two.
【０００６】[0006]
【発明が解決しようとする課題】しかしながら、近時、
半導体素子は高性能化が急激に進み、半導体素子に出し
入れされる電気信号もパルス幅の短い、高周波のものと
なってきた。そのためこの半導体素子を従来のセラミッ
ク配線基板に搭載、収容し、しかる後、配線導体を介し
て半導体素子に電気信号を伝達させた場合、配線導体の
表面に被着させたニッケル層が磁性材料であるため磁場
が残留し、これが次に伝達される電気信号にノイズとな
って入り込み半導体素子を誤動作させるという欠点を招
来した。However, in recent years,
The performance of semiconductor elements has rapidly increased, and the electric signals input to and output from the semiconductor elements have become high-frequency signals with a short pulse width. Therefore, when this semiconductor element is mounted and housed on a conventional ceramic wiring board and then an electric signal is transmitted to the semiconductor element via the wiring conductor, the nickel layer deposited on the surface of the wiring conductor is made of a magnetic material. For this reason, a magnetic field remains, which causes noise in an electric signal to be transmitted next, and causes a malfunction of the semiconductor element.
【０００７】[0007]
【発明の目的】本発明は上記欠点に鑑み案出されたもの
で、その目的は搭載、収容される半導体素子に誤動作を
起こさせることなく、長期間にわたり正常、且つ安定に
作動させることができるセラミック配線基板を提供する
ことにある。SUMMARY OF THE INVENTION The present invention has been devised in view of the above-mentioned drawbacks, and an object of the present invention is to enable normal and stable operation for a long period of time without causing a malfunction in a semiconductor element to be mounted and housed. It is to provide a ceramic wiring board.
【０００８】[0008]
【課題を解決するための手段】本発明はセラミック体上
にタングステン、モリブデン、マンガンの少なくとも1
種から成る配線導体を被着させて成るセラミック配線基
板であって、前記配線導体の表面が厚さ0.1 μm 以上の
白金層と、厚さ0.05μm 以上の金層とで被覆されている
ことを特徴とするものである。The present invention provides at least one of tungsten, molybdenum and manganese on a ceramic body.
A ceramic wiring substrate formed by depositing a wiring conductor made of seed, wherein the surface of the wiring conductor is covered with a platinum layer having a thickness of 0.1 μm or more and a gold layer having a thickness of 0.05 μm or more. It is a feature.
【０００９】[0009]
【実施例】次に本発明を添付図面に基づき詳細に説明す
る。図1 は本発明のセラミック配線基板の一実施例を示
す断面図であり、1 は絶縁基体、2 は配線導体である。The present invention will now be described in detail with reference to the accompanying drawings. FIG. 1 is a sectional view showing an embodiment of the ceramic wiring board of the present invention, in which 1 is an insulating substrate and 2 is a wiring conductor.
【００１０】前記絶縁基体1 は酸化アルミニウム質焼結
体、ムライト質焼結体、窒化アルミニウム質焼結体、炭
化珪素質焼結体等の電気絶縁性に優れた材料から成り、
例えば酸化アルミニウム質焼結体から成る場合にはアル
ミナ(Al 2 O 3 ) 、シリカ(SiO2 ) 、カルシア(CaO) 、
マグネシア(MgO) 等の原料粉末に適当な有機溶剤、溶媒
を添加混合して泥漿状となすとともにこれを従来周知の
ドクターブレード法やカレンダーロール法を採用するこ
とによってセラミックグリーンシート( セラミック生シ
ート) を形成し、しかる後、前記セラミックグリーンシ
ートに適当な打ち抜き加工を施し、所定形状となすとと
もに高温( 約1600℃) で焼成することによって、或いは
アルミナ等の原料粉末に適当な有機溶剤、溶媒を添加混
合するとともに該原料粉末をプレス成形機によって所定
形状に成形し、次に前記成形体を約1600℃の温度で焼成
することによって製作される。The insulating substrate 1 is made of a material having excellent electrical insulation such as an aluminum oxide sintered body, a mullite sintered body, an aluminum nitride sintered body, and a silicon carbide sintered body.
For example, when it is made of an aluminum oxide sintered body, alumina (Al 2 O 3 ), silica (SiO 2 ), calcia (CaO),
Ceramic green sheet (ceramic green sheet) by adding a suitable organic solvent and solvent to raw material powder such as magnesia (MgO) to form a slurry and adopting the conventionally known doctor blade method or calender roll method. Then, the ceramic green sheet is appropriately punched to form a predetermined shape and is baked at a high temperature (about 1600 ° C), or an appropriate organic solvent or solvent is added to the raw material powder such as alumina. It is manufactured by adding and mixing and molding the raw material powder into a predetermined shape by a press molding machine, and then firing the molded body at a temperature of about 1600 ° C.
【００１１】また前記絶縁基体1 の上面には配線導体2
が被着されており、該配線導体2 は絶縁基体1 の上面に
搭載、収容される半導体素子3 を外部電気回路等に接続
する際の導電路として作用する。前記配線導体2 はタン
グステン、モリブデン、マンガンの少なくとも1 種から
から成り、該タングステン等の金属粉末に適当な有機溶
剤、溶媒を添加混合して得た金属ペーストを絶縁基体1
となるセラミックグリーンシート等の表面に予め従来周
知のスクリーン印刷法等の厚膜形成技術を採用し所定パ
ターンに印刷塗布しておくことによって絶縁基体1 の上
面に被着される。A wiring conductor 2 is formed on the upper surface of the insulating substrate 1.
The wiring conductor 2 is mounted on the upper surface of the insulating substrate 1 and acts as a conductive path when the semiconductor element 3 housed and accommodated therein is connected to an external electric circuit or the like. The wiring conductor 2 is made of at least one of tungsten, molybdenum, and manganese, and a metal paste obtained by adding and mixing an appropriate organic solvent or solvent to the metal powder of tungsten or the like is used as the insulating substrate 1.
A thick film forming technique such as a well-known screen printing method is used in advance on the surface of a ceramic green sheet or the like to be formed and printed and applied in a predetermined pattern, so that it is attached to the upper surface of the insulating substrate 1.
【００１２】前記配線導体2 はまたその表面に白金層4
が被着されており、該白金層4 によって配線導体2 は被
覆されている。The wiring conductor 2 also has a platinum layer 4 on its surface.
And the wiring layer 2 is covered with the platinum layer 4.
【００１３】前記白金層4 は配線導体2 の表面に後述す
る金層5 を被着させる際、配線導体2 と金層5 とを強固
に被着接合させる作用を為し、通常、電解メッキ法等に
よって配線導体2 の露出する表面に被着される。尚、前
記白金層4 は非磁性材料であるため配線導体2 に周波数
の高い電気信号が伝達されたとしても白金層4 に磁場が
残留することはなく、その結果、白金層4 に残留する磁
場によって配線導体2 に次に伝達される電気信号にノイ
ズが入り込むことは皆無で、半導体素子3 をつねに正
常、且つ安定に作動させることが可能となる。The platinum layer 4 has a function of firmly adhering and bonding the wiring conductor 2 and the gold layer 5 to each other when the gold layer 5 to be described later is adhered to the surface of the wiring conductor 2. And the like are attached to the exposed surface of the wiring conductor 2. Since the platinum layer 4 is a non-magnetic material, even if a high frequency electric signal is transmitted to the wiring conductor 2, the magnetic field does not remain in the platinum layer 4, and as a result, the magnetic field remaining in the platinum layer 4 remains unchanged. As a result, noise will never be introduced into the electric signal to be transmitted next to the wiring conductor 2, and the semiconductor element 3 can always be operated normally and stably.
【００１４】また前記白金層4 はその厚みが0.1 μm 未
満となると配線導体2 に金層5 を強固に被着接合させる
のが困難となるため前記白金層4 はその厚みが0.1 μm
以上に特定され、経済的な点を考慮すると0.1 乃至3.0
μm の範囲とすることが好ましい。When the platinum layer 4 has a thickness of less than 0.1 μm, it becomes difficult to firmly adhere and bond the gold layer 5 to the wiring conductor 2, so that the platinum layer 4 has a thickness of 0.1 μm.
Given the above, considering economic factors 0.1 to 3.0
It is preferably in the range of μm.
【００１５】前記白金層4 は更にその表面に金層5 が被
着されており、該金層5 によって配線導体2 及び白金層
4 が被覆されている。The platinum layer 4 is further coated with a gold layer 5 on the surface thereof, and the gold layer 5 allows the wiring conductor 2 and the platinum layer to be formed.
4 is coated.
【００１６】前記金層5 は配線導体2 の酸化腐食を有効
に防止するとともに配線導体2 と半導体素子3 等との電
気的接続を良好とする作用を為し、通常、電解メッキ法
等によって白金層4 の露出する表面に被着される。尚、
前記金層4 は非磁性材料であるため配線導体2 に周波数
の高い電気信号が伝達されたとしても金層5 に磁場が残
留することはなく、その結果、金層5 に残留する磁場に
よって配線導体2 に次に伝達される電気信号にノイズが
入り込むことは皆無で、半導体素子3 をつねに正常、且
つ安定に作動させることが可能となる。The gold layer 5 effectively prevents oxidative corrosion of the wiring conductor 2 and improves electrical connection between the wiring conductor 2 and the semiconductor element 3 and the like. It is applied to the exposed surface of layer 4. still,
Since the gold layer 4 is a non-magnetic material, even if a high-frequency electric signal is transmitted to the wiring conductor 2, the magnetic field does not remain in the gold layer 5, and as a result, the magnetic field remaining in the gold layer 5 causes wiring. It is possible to operate the semiconductor element 3 normally and stably without any noise entering the electric signal transmitted next to the conductor 2.
【００１７】また前記金層4 はその厚みが0.05μm 未満
となると半導体素子3 等を配線導体2 に対し良好に電気
的接続するのが困難となるため前記金層5 はその厚みが
0.05μm 以上に特定され、経済的な点を考慮すると0.05
乃至3.0 μm の範囲とすることが好ましい。If the thickness of the gold layer 4 is less than 0.05 μm, it becomes difficult to satisfactorily electrically connect the semiconductor element 3 and the like to the wiring conductor 2.
It is specified above 0.05 μm, and considering the economical point, it is 0.05
It is preferably in the range of to 3.0 μm.
【００１８】かくして本発明のセラミック配線基板によ
れば配線導体2 に半導体素子3 等を電気的に接続し、配
線導体2 を介して半導体素子3 に電気信号を出し入れす
ることによって回路配線基板や半導体素子収納用パッケ
ージとして機能する。Thus, according to the ceramic wiring board of the present invention, the semiconductor element 3 or the like is electrically connected to the wiring conductor 2 and an electric signal is sent or received to or from the semiconductor element 3 via the wiring conductor 2 to form a circuit wiring board or a semiconductor. Functions as a package for element storage.
【００１９】尚、本発明は上述の実施例に限定されるも
のではなく、本発明の要旨を逸脱しない範囲であれば種
々の変更は可能である。The present invention is not limited to the above-mentioned embodiments, and various modifications can be made without departing from the gist of the present invention.
【００２０】[0020]
【発明の効果】本発明によればセラミック体上に被着さ
せた配線導体を厚さが0.1 μm 以上の白金層と、厚さが
0.05μm 以上の金層とで被覆したことから配線導体の酸
化腐食を有効に防止して、且つ配線導体に半導体素子等
を強固に電気的接続することが可能となる。According to the present invention, the wiring conductor deposited on the ceramic body has a platinum layer with a thickness of 0.1 μm or more and a thickness of 0.1 μm or more.
Since the wiring conductor is covered with a gold layer having a thickness of 0.05 μm or more, it is possible to effectively prevent oxidative corrosion of the wiring conductor and to firmly electrically connect the semiconductor element or the like to the wiring conductor.
【００２１】また本発明によれば配線導体を非磁性材料
である白金と金で被覆したことから配線導体に高周波の
電気信号が伝達したとしても磁場が残留することはな
く、該残留磁場によって配線導体に次に伝達される電気
信号にノイズが入り込むことが皆無となって半導体素子
を常に、正常、且つ安定に作動させることが可能とな
る。Further, according to the present invention, since the wiring conductor is coated with platinum and gold which are non-magnetic materials, no magnetic field remains even when a high frequency electric signal is transmitted to the wiring conductor, and the residual magnetic field causes wiring It is possible to always operate the semiconductor element normally and stably, since no noise will be introduced into the electric signal transmitted next to the conductor.
【図１】本発明のセラミック配線基板の一実施例を示す
断面図である。FIG. 1 is a sectional view showing an embodiment of a ceramic wiring board of the present invention.
１・・・・・絶縁基体 ２・・・・・配線導体 ３・・・・・半導体素子 ４・・・・・白金層 ５・・・・・金層 1 ... Insulating substrate 2 ... Wiring conductor 3 ... Semiconductor element 4 ... Platinum layer 5 ... Gold layer
Claims (1)
ン、マンガンの少なくとも1 種から成る配線導体を被着
させて成るセラミック配線基板であって、前記配線導体
の表面が厚さ0.1 μm 以上の白金層と、厚さ0.05μm 以
上の金層とで被覆されていることを特徴とするセラミッ
ク配線基板。1. A ceramic wiring board comprising a ceramic body and a wiring conductor made of at least one of tungsten, molybdenum and manganese deposited on the ceramic body, the surface of the wiring conductor being a platinum layer having a thickness of 0.1 μm or more. , A ceramic wiring board characterized by being coated with a gold layer having a thickness of 0.05 μm or more.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4164689A JP2738624B2 (en) | 1992-06-23 | 1992-06-23 | Ceramic wiring board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4164689A JP2738624B2 (en) | 1992-06-23 | 1992-06-23 | Ceramic wiring board |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH066000A true JPH066000A (en) | 1994-01-14 |
| JP2738624B2 JP2738624B2 (en) | 1998-04-08 |
Family
ID=15797989
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4164689A Expired - Fee Related JP2738624B2 (en) | 1992-06-23 | 1992-06-23 | Ceramic wiring board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2738624B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104349586A (en) * | 2013-07-31 | 2015-02-11 | 黄小蔓 | Ceramic-based manganese coating wire PCB and preparation method thereof |
| WO2018042918A1 (en) | 2016-08-31 | 2018-03-08 | 日本特殊陶業株式会社 | Wiring board and method for manufacturing same |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04109658A (en) * | 1990-08-30 | 1992-04-10 | Electroplating Eng Of Japan Co | Electronic component package |
-
1992
- 1992-06-23 JP JP4164689A patent/JP2738624B2/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04109658A (en) * | 1990-08-30 | 1992-04-10 | Electroplating Eng Of Japan Co | Electronic component package |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104349586A (en) * | 2013-07-31 | 2015-02-11 | 黄小蔓 | Ceramic-based manganese coating wire PCB and preparation method thereof |
| WO2018042918A1 (en) | 2016-08-31 | 2018-03-08 | 日本特殊陶業株式会社 | Wiring board and method for manufacturing same |
| US11399426B2 (en) | 2016-08-31 | 2022-07-26 | Ngk Spark Plug Co., Ltd. | Wiring board and method for manufacturing same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2738624B2 (en) | 1998-04-08 |
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