JPH0658447B2 - Optical circuit element - Google Patents
Optical circuit elementInfo
- Publication number
- JPH0658447B2 JPH0658447B2 JP59111435A JP11143584A JPH0658447B2 JP H0658447 B2 JPH0658447 B2 JP H0658447B2 JP 59111435 A JP59111435 A JP 59111435A JP 11143584 A JP11143584 A JP 11143584A JP H0658447 B2 JPH0658447 B2 JP H0658447B2
- Authority
- JP
- Japan
- Prior art keywords
- circuit element
- optical circuit
- shielding material
- substrate
- optical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Integrated Circuits (AREA)
Description
【発明の詳細な説明】 (1)発明の技術分野 本発明は光回路素子、詳しくは光回路素子に対し輻射熱
等による吸熱、放熱を均一にし同素子内の温度を平均的
に保持するための遮光材を形成して成る光回路素子に関
する。Description: (1) Technical Field of the Invention The present invention relates to an optical circuit element, and more particularly to an optical circuit element for uniformly absorbing heat and radiating heat by radiant heat or the like and keeping the temperature in the element evenly. The present invention relates to an optical circuit element formed by forming a light shielding material.
(2)技術の背景 光通信技術の普及とともに、そこに使われる素子は多様
なものとなる傾向にある。これらの部品が使用される環
境は高温、低温、高湿等過酷な、かつ変化する条件であ
り、これらの条件に耐えうる素子の研究が活発に進めら
れている。(2) Background of technology With the spread of optical communication technology, the devices used in it tend to be diverse. The environment in which these parts are used is harsh and changing conditions such as high temperature, low temperature, and high humidity, and the research of devices that can withstand these conditions is actively underway.
導波路デバイスは平板基板上に光ガイド（導波路）を作
り、その内に一体化された光回路素子を設けるものであ
り、量産性、小型化、一体化を目的として形成される。
その一例である光スイッチは、リチウムナイオベート
（LiNbO3）基板にチタン（Ti）を蒸着により被着し熱放
散により導波路を作り、その上に電極を設けてスイッチ
または変調機能をもたせたものである。The waveguide device is for forming an optical guide (waveguide) on a flat substrate and providing an integrated optical circuit element therein, and is formed for the purpose of mass production, miniaturization and integration.
An example of such an optical switch is one in which titanium (Ti) is deposited on a lithium niobate (LiNbO 3 ) substrate by vapor deposition, a waveguide is formed by heat dissipation, and electrodes are provided on it to provide a switch or modulation function. Is.
(3)従来技術と問題点 ところで、光回路素子がもっている本来の性質は温度サ
イクルをかけると変化することが経験されている。電極
は金属材料で作られ、光のみならず輻射熱、放射熱など
を吸収し発熱し、金属電極の放（吸）熱係数はまわりの
金属の付いていない基板のそれとは異なり、その結果電
極が局部的に熱くなったり冷たくなったりする。(3) Prior art and problems By the way, it has been experienced that the original properties of optical circuit elements change when subjected to temperature cycling. The electrode is made of a metallic material and absorbs not only light but also radiant heat, radiant heat, etc. to generate heat, and the heat dissipation coefficient of the metal electrode is different from that of the substrate without surrounding metal, and as a result, the electrode It may get hot or cold locally.
導波路は幅例えば４μｍのオーダーのものでそれが４〜
７μｍ間隔で配置されているので、前記した温度の不均
一性により強く影響され、このこともまた光回路素子の
特性の変化の原因である。The width of the waveguide is, for example, on the order of 4 μm.
Since they are arranged at intervals of 7 μm, they are strongly influenced by the above-mentioned nonuniformity of temperature, which is also a cause of the change in the characteristics of the optical circuit element.
(4)発明の目的 本発明は上記従来の問題に鑑み、温度分布が均一化され
た光回路素子を提供することを目的とする。(4) Object of the Invention In view of the above conventional problems, it is an object of the present invention to provide an optical circuit device having a uniform temperature distribution.
(5)発明の構成 そしてこの目的は本発明によれば、複数の材料により構
成される光回路素子の基板表面の全面に密着して、該基
板表面を熱的に短絡させるための遮光材層を設けたこと
を特徴とする光回路素子を提供することによって達成さ
れ、また前記遮光材層と光回路素子基板との間に電気
的、光学的、化学的絶縁性をもった保護材からなるバッ
ファ層を有する光回路素子を形成してもよい。(5) Structure of the invention According to the present invention, a light-shielding material layer for adhering to the entire surface of the substrate of an optical circuit element composed of a plurality of materials to thermally short-circuit the substrate surface. And a protective material having electrical, optical and chemical insulation between the light shielding material layer and the optical circuit element substrate. An optical circuit element having a buffer layer may be formed.
(6)発明の実施例 以下、本発明の実施例を図面によって詳述する。(6) Embodiments of the Invention Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
外部に温度変化が生じた場合、この変化は伝導熱、輻射
熱として素子に伝わる。このとき、素子が異なる材質か
ら構成されている場合、それぞれの材質により、吸熱係
数、伝導率が異なるため、素子中に温度分布が生ずる。
通常温度変化により物質の屈折率が変化するため、温度
分布に従った屈折率分布が生ずる。光回路素子ではこの
ような屈折率分布が重要である場合が多い。これを除去
するため、本発明では筺体内部の素子に対して、これに
密着させて遮光材を設けたものである。When a temperature change occurs outside, this change is transmitted to the element as conduction heat or radiant heat. At this time, when the element is made of different materials, the endothermic coefficient and the conductivity are different depending on each material, so that the temperature distribution occurs in the element.
Usually, the refractive index of the substance changes due to the temperature change, so that the refractive index distribution follows the temperature distribution. In the optical circuit element, such a refractive index distribution is often important. In order to remove this, in the present invention, a light-shielding material is provided in close contact with the element inside the housing.
第１図はLiNbO3基板１上に作られた光導波路２と電極３
を示している。電極は通常アルミニウム（Ａ）等の金
属を蒸着して形成される。かかる基板はSUS、ガラスま
たはＡ製の台の上に配置される。Figure 1 shows an optical waveguide 2 and an electrode 3 made on a LiNbO 3 substrate 1.
Is shown. The electrodes are usually formed by depositing a metal such as aluminum (A). Such a substrate is placed on a table made of SUS, glass or A.
この素子に外部から熱を加えた場合、例えばランプ照射
がなされまたはまわりが高温になった場合、電極３に用
いた金属の吸熱効率が高いため、電極部が選択的に加熱
される。この結果、電極下の屈折率が変化し、このスイ
ッチ特性が悪影響を受ける。When heat is applied to this element from the outside, for example, when the lamp is irradiated or the temperature becomes high, the metal used for the electrode 3 has a high heat absorption efficiency, so that the electrode portion is selectively heated. As a result, the refractive index under the electrode changes, and this switch characteristic is adversely affected.
これに対し、本発明によると第２図に示されるように遮
光材層４を設ける。遮光材は例えば熱吸収率の高い黒色
塗料などを用いる。そうすると素子内部の温度分布は均
一となり、電極金属の熱伝導率は高いため、結果的には
LiNbO3基板の表面層は面内で温度分布が均一となる。な
お、第２図と第３図において、既に図示した部分と同じ
部分は同一符号を付して表示する。On the other hand, according to the present invention, the light shielding material layer 4 is provided as shown in FIG. As the light shielding material, for example, black paint having a high heat absorption rate is used. Then, the temperature distribution inside the device becomes uniform, and the thermal conductivity of the electrode metal is high.
The surface layer of the LiNbO 3 substrate has a uniform temperature distribution within the surface. In FIGS. 2 and 3, the same parts as those already shown are designated by the same reference numerals.
遮光材は黒色の輻射熱吸収率が高いもので作ったから、
先ず遮光材層４が熱くなる。金属電極３は熱伝導性が高
いので遮光材層内部は電極を含め熱的に短絡した状態に
なる。その結果、温度差がなくなり、外部からの熱は緩
和されることになる。遮光材層がないときには、透過性
をもった輻射熱は電極を透過して下にある導波路２に達
し、前記した如くその部分の屈折率に変化を与え、素子
の特性に影響を与えたものである。Since the light shielding material is made of black with a high radiant heat absorption rate,
First, the light shielding material layer 4 becomes hot. Since the metal electrode 3 has high thermal conductivity, the inside of the light shielding material layer is thermally short-circuited including the electrodes. As a result, there is no temperature difference and the heat from the outside is alleviated. When there is no light-shielding material layer, radiant heat having transmissivity passes through the electrode and reaches the underlying waveguide 2, which changes the refractive index of that portion as described above and affects the characteristics of the element. Is.
遮光材層４は電極部分のみに、もしくは基板全面に被着
してもよく、または第２図に示す如くLiNbO3基板１の裏
側に被着してもよい。The light-shielding material layer 4 may be applied only to the electrode portion or the entire surface of the substrate, or may be applied to the back side of the LiNbO 3 substrate 1 as shown in FIG.
第３図は本発明の他の実施例を示し、この実施例におい
ては遮光材層４の下に更にバッファ層５を設ける。バッ
ファ層５はアルミナ（Ａ２Ｏ３）または二酸化シリコ
ン（SiO2）で作る。バッファ層を設けることにより、素
子は酸化、温度等から電気的、光学的、化学的に絶縁さ
れ保護されるとともに、遮光材層に用いた材料の導電性
等によるリークを防止する効果がある。FIG. 3 shows another embodiment of the present invention. In this embodiment, a buffer layer 5 is further provided under the light shielding material layer 4. The buffer layer 5 is made of alumina (A 2 O 3 ) or silicon dioxide (SiO 2 ). By providing the buffer layer, the element is electrically, optically, and chemically insulated and protected from oxidation, temperature, and the like, and at the same time, it has the effect of preventing leakage due to the conductivity of the material used for the light shielding material layer.
(7)発明の効果 以上詳細に説明した如く本発明によれば、光回路素子に
おいて素子に密着させて遮光材層を設けることにより光
回路素子内の温度分布を均一にし、外部からの熱による
素子特性の変化を防止するに効果大である。なお、遮光
材、バッファ層の材料は上記の例に限定されるものでな
く、光回路素子の種類、それの用いられる環境を考慮し
て適宜選定することができる。(7) Effects of the Invention According to the present invention as described in detail above, the temperature distribution in the optical circuit element is made uniform by providing the light shielding material layer in close contact with the element in the optical circuit element, and the heat generated from the outside It is effective in preventing changes in device characteristics. The materials for the light shielding material and the buffer layer are not limited to the above examples, and can be appropriately selected in consideration of the type of optical circuit element and the environment in which it is used.
第１図はバイポーラ光スイッチの一部断面を示す斜視
図、第２図と第３図は本発明実施例の断面図である。 １……LiNbO3基板、２……導波路、 ３……電極、４……遮光材層、 ５……バッファ層FIG. 1 is a perspective view showing a partial cross section of a bipolar optical switch, and FIGS. 2 and 3 are cross sectional views of an embodiment of the present invention. 1 ... LiNbO 3 substrate, 2 ... waveguide, 3 ... electrode, 4 ... light-shielding material layer, 5 ... buffer layer
───────────────────────────────────────────────────── フロントページの続き (72)発明者 中島 啓幾 神奈川県川崎市中原区上小田中1015番地 富士通株式会社内 (56)参考文献 特開 昭57−173819（ＪＰ，Ａ) ─────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Keiichi Nakajima 1015 Kamiodanaka, Nakahara-ku, Kawasaki-shi, Kanagawa Fujitsu Limited (56) References JP 57-173819 (JP, A)
Claims (2)
基板表面の全面に密着して、該基板表面を熱的に短絡さ
せるための遮光材層を設けたことを特徴とする光回路素
子。1. An optical circuit element comprising a light-shielding material layer which is in close contact with the entire surface of a substrate of an optical circuit element composed of a plurality of materials to thermally short-circuit the surface of the substrate. .
気的、光学的、化学的絶縁性をもった保護材からなるバ
ッファ層を有することを特徴とする特許請求の範囲第１
項記載の光回路素子。2. A buffer layer made of a protective material having electrical, optical and chemical insulating properties is provided between the light shielding material layer and the optical circuit element substrate.
The optical circuit element according to the item.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59111435A JPH0658447B2 (en) | 1984-05-31 | 1984-05-31 | Optical circuit element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59111435A JPH0658447B2 (en) | 1984-05-31 | 1984-05-31 | Optical circuit element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60254102A JPS60254102A (en) | 1985-12-14 |
| JPH0658447B2 true JPH0658447B2 (en) | 1994-08-03 |
Family
ID=14561118
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59111435A Expired - Lifetime JPH0658447B2 (en) | 1984-05-31 | 1984-05-31 | Optical circuit element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0658447B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6457207A (en) * | 1987-08-28 | 1989-03-03 | Hitachi Ltd | Waveguide type optical device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57173819A (en) * | 1981-04-20 | 1982-10-26 | Matsushita Electric Ind Co Ltd | Optical switch |
-
1984
- 1984-05-31 JP JP59111435A patent/JPH0658447B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60254102A (en) | 1985-12-14 |
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