JPS6035016B2 - Thermistor bolometer - Google Patents
Thermistor bolometerInfo
- Publication number
- JPS6035016B2 JPS6035016B2 JP8888879A JP8888879A JPS6035016B2 JP S6035016 B2 JPS6035016 B2 JP S6035016B2 JP 8888879 A JP8888879 A JP 8888879A JP 8888879 A JP8888879 A JP 8888879A JP S6035016 B2 JPS6035016 B2 JP S6035016B2
- Authority
- JP
- Japan
- Prior art keywords
- thermistor
- bolometer
- constant
- thin film
- resistance value
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010409 thin film Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 claims 1
- 239000010980 sapphire Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 7
- 230000035945 sensitivity Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 244000237986 Melia azadirachta Species 0.000 description 1
- 235000013500 Melia azadirachta Nutrition 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- MUJOIMFVNIBMKC-UHFFFAOYSA-N fludioxonil Chemical compound C=12OC(F)(F)OC2=CC=CC=1C1=CNC=C1C#N MUJOIMFVNIBMKC-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- PGAPATLGJSQQBU-UHFFFAOYSA-M thallium(i) bromide Chemical compound [Tl]Br PGAPATLGJSQQBU-UHFFFAOYSA-M 0.000 description 1
- CMJCEVKJYRZMIA-UHFFFAOYSA-M thallium(i) iodide Chemical compound [Tl]I CMJCEVKJYRZMIA-UHFFFAOYSA-M 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Radiation Pyrometers (AREA)
Description
【発明の詳細な説明】
本発明の目的は以上のような欠点を除去し、比抵抗に制
限されることなく充分大きいＢ定数のサーミスタを使用
した、高感度のボーロメー夕を提供しようとするもので
ある。DETAILED DESCRIPTION OF THE INVENTION The object of the present invention is to eliminate the above-mentioned drawbacks and provide a highly sensitive bolometer using a thermistor with a sufficiently large B constant without being limited by resistivity. It is.
以下、本発明の実施例を添付図面第１図〜第４図により
従釆例と対比しながら説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described with reference to FIGS. 1 to 4 of the accompanying drawings, while comparing them with subsidiary examples.
まず、第１図、第２図により既存のサーミスタ・ボロメ
ータの基本構成について示す。First, the basic configuration of an existing thermistor bolometer is shown in FIGS. 1 and 2.
１はョウ化タリウム、臭化タリウム、ゲルマニウムなど
の赤外線透過窓である。1 is an infrared transmitting window made of thallium iodide, thallium bromide, germanium, or the like.
２は受光素子、３は補償素子で、抵抗値、Ｂ定数の一致
したサ−ミスタが使用される。2 is a light receiving element, 3 is a compensation element, and thermistors having the same resistance value and B constant are used.
４と５はバイアス端子で、同圧、逆符号の電圧が印加さ
れる。4 and 5 are bias terminals to which voltages of the same voltage and opposite sign are applied.
６は出力端子である。6 is an output terminal.
第２図は２，３の素子を拡大した図で、７はサフアィャ
，セラミック，ガラスなどの絶縁本発明は高感度で低抵
抗の薄膜型サーミスタ・ボーロメータに関するものであ
る。放射温度計などに使用される赤外線検出器にボロメ
ータがあるが、この受光部には、一般に金属に比較して
抵抗温度係数のきわめて大きいサーミスタが使用される
。FIG. 2 is an enlarged view of elements 2 and 3, and 7 is an insulator made of saphire, ceramic, glass, etc. The present invention relates to a thin film type thermistor borometer with high sensitivity and low resistance. A bolometer is an infrared detector used in a radiation thermometer, etc., and a thermistor, which has a much larger temperature coefficient of resistance than a metal, is generally used in the light receiving part of the bolometer.
なお、サーミスタの温度係数はＢ定数と呼ばれる定数で
ある。ボロメータの感度はＢ定数が大きいほど大きくな
るが、この比抵抗がＢ定数の指数関数にほぼ対応して大
きくなるため、受信回路の入力インピーダンス制限から
来るボロメータの抵抗値制限、応答時間制限などにより
膜厚上限が定められ、おのずから使用し得るＢ定数にも
上限が生じてしまつ。Note that the temperature coefficient of the thermistor is a constant called the B constant. The sensitivity of the bolometer increases as the B constant increases, but since this resistivity increases almost in proportion to the exponential function of the B constant, the sensitivity of the bolometer increases due to the input impedance limit of the receiving circuit, the response time limit, etc. The upper limit of the film thickness is set, and there is also an upper limit to the B constant that can be used.
基板で、この上にサーミスタ８が蒸着あるいはスパッタ
などの方法で形成され、さらにこの両端に電極９が形成
される。A thermistor 8 is formed on the substrate by a method such as vapor deposition or sputtering, and electrodes 9 are further formed on both ends of the substrate.
ａは平面図、ｂは側面図である。図中で電流は長さＬ方
向に流れる。次に本発明のサーミスタ・ボロメ−夕の受
光素子の基本構成を第３図により説明する。A is a plan view, and b is a side view. In the figure, the current flows in the length L direction. Next, the basic structure of the light receiving element of the thermistor bolometer of the present invention will be explained with reference to FIG.
第３図において１川ま下部電極であり、この上にサーミ
スタ８が形成される。In FIG. 3, one river is the lower electrode, on which the thermistor 8 is formed.
１１は上部電極でサーミスタに効率良く赤外線が吸収さ
れるよう、赤外線に対して透明な材料であるゲルマニウ
ムなどを使用する。Reference numeral 11 denotes an upper electrode, which is made of a material such as germanium that is transparent to infrared rays so that the thermistor efficiently absorbs infrared rays.
あるいは、これを側都電極１２と一体とし、金あるいは
白金などの金属にて形成し、サーミスタの上部にあたる
部分のみ黒化して÷同じく赤外線吸収が良好であるよう
にしてもよい。図中で電流は厚さ日方向に流れる。次に
ボロメータの赤外線検出作用について説明する。Alternatively, this may be integrated with the side electrode 12, made of metal such as gold or platinum, and only the upper part of the thermistor is blackened so that it also has good infrared absorption. In the figure, the current flows in the thickness direction. Next, the infrared detection function of the bolometer will be explained.
外部から赤外線透過窓を通して入射した赤外線は、受光
素子２のサーミスタ受光面にて熱に変換され、サーミス
タ８の温度を上げる。Infrared rays incident from the outside through the infrared transmitting window are converted into heat at the thermistor light receiving surface of the light receiving element 2, thereby increasing the temperature of the thermistor 8.
この時、サーミスタの抵抗値は−Ｂ／Ｔ２に従って△Ｒ
ａだけ小さくなる。第４図に示すように、ボロメータの
受光素子２、補償素子３に電圧Ｅが印加されていたとす
ると、出力端子１３には次式に従ってＶが発生する。Ｖ
＝霊曇＝会憲章三叢Ｅ …イ１１
ここでＲａ，Ｒｃはそれぞれ受光素子、補償素子の抵抗
値で、温度が同じであればＲａ：ＲＣである。At this time, the resistance value of the thermistor is △R according to -B/T2
becomes smaller by a. As shown in FIG. 4, if a voltage E is applied to the light receiving element 2 and the compensation element 3 of the bolometer, a voltage V is generated at the output terminal 13 according to the following equation. V
= Reitun = Society Charter Sanso E...11 Here, Ra and Rc are the resistance values of the light receiving element and the compensation element, respectively, and if the temperature is the same, Ra:RC.
既存のボロメータの場合、受光素子の抵抗値Ｒａは第２
図で見るように次式で表わされる。Ｌ
．．．・・・（２）Ｒａ＝Ｐ両日視野角
の対称性のため、一般にＷ；Ｌであるから、Ｒａを小さ
くするためには日を大きくしなければならない。In the case of existing bolometers, the resistance value Ra of the light receiving element is the second
As shown in the figure, it is expressed by the following formula. L
．． ．． ．． (2) Ra=P Due to the symmetry of the viewing angle on both days, generally W; L, so in order to reduce Ra, the day must be increased.
しかし、サーミスタ薄膜をスパッタなどの方法で形成し
た場合、膜が厚くなると急速に内部応力が大きくなり、
膜剥離などの原因になる。また応答性が悪くなり、薄膜
で形成したことの利点が失われてしまう。一方、感度を
上げるためにはＢ定数を大きくしなければならないが、
比抵抗ｐとＢ定数の間には次式のような関係があり、ｐ
＝ｐ畑ｐ為；ｐ。However, when a thermistor thin film is formed by a method such as sputtering, internal stress increases rapidly as the film becomes thicker.
This may cause film peeling, etc. Furthermore, the responsiveness deteriorates, and the advantage of forming the thin film is lost. On the other hand, in order to increase sensitivity, the B constant must be increased,
There is a relationship between the specific resistance p and the B constant as shown in the following equation, and p
=pfieldptame;p.
ｅＸｐ（亭−者）．．．‐‐．‘３’Ｂ定数をわずかに
大きくして感度を良くしようとすると、抵抗値がさわめ
て大きくなり、膜厚のみによる抵抗値制御では、多くの
問題を生ずることになってしまう。eXp (tei-sha). ．． ．． ‐‐． If an attempt is made to improve the sensitivity by slightly increasing the '3'B constant, the resistance value will increase significantly, and many problems will occur if the resistance value is controlled only by the film thickness.
しかしながら本発明による素子の場合、抵抗値Ｒａは次
式日 ．．．・・・｛４
１Ｒａ＝Ｐ丙ｔのように表わされるため、抵抗値を下げ
るためには受光面積を大きくするか、膜厚日を薄くすれ
ば良いわけで、Ｂ定数のきわめて大きい材料を使用して
も、前述のような問題は生じない。However, in the case of the device according to the invention, the resistance value Ra is given by the following formula: ．． ．． ...{4
Since it is expressed as 1Ra=Pt, in order to lower the resistance value, it is sufficient to increase the light receiving area or reduce the film thickness.Even if a material with an extremely large B constant is used, the above-mentioned Such problems do not occur.
表１にこの一例を示す。既存の素子の仕様で使用し得る
材料の上限Ｂ定数が３００の星度であっても、本発明の
素子では７００晩華度のＢ定数の素子を使用し得る。表
１ｐのニ５×１０‐３Ｑ仇
Ｔ＝（２５十２７３．１５）Ｋ
ＷニＬニ０，５肋ニ５×１０‐２仇
日ニームｍニＩＸＩＯ−４仇
Ｒａ
以上詳述したように本発明は、サーミス夕薄膜の厚さ方
向に電流が流れるように形成したサーミスタ・ボロメー
タである。Table 1 shows an example of this. Even if the upper limit B constant of the material that can be used in the specifications of the existing element is 300 star degrees, the element of the present invention can use an element with a B constant of 700 degrees Fahrenheit. In Table 1p, 5 x 10-3 Q T = (25 273.15) K W 2 L 0.5 ribs 5 x 10-2 days Neem m IXIO-4 Ra As detailed above. The present invention is a thermistor bolometer formed so that current flows in the thickness direction of the thermistor thin film.
従って、従来のものにおいて抵抗値を下げるには膜厚を
厚くしなければならず、又、Ｂ定数を大きくすると急撃
に抵抗値が大きくなってしまうのに比較して、本発明で
は、膜厚を薄くするが受光面積を大きくするかすれば容
易に抵抗値を下げることができ、又、Ｂ定数を大きくし
たとしても、極端に抵抗値が大きくなってしまうことが
ない。Therefore, in the conventional method, the film thickness must be increased in order to lower the resistance value, and when the B constant is increased, the resistance value increases suddenly, but in the present invention, the film thickness is increased. The resistance value can be easily lowered by reducing the thickness but increasing the light-receiving area, and even if the B constant is increased, the resistance value will not become extremely large.
つまり、Ｂ定数の大きいサーミスタを使用しても抵抗値
は大きくなってしまうことはなく、実用上すぐれた高感
度のサーミスタを得ることができる。In other words, even if a thermistor with a large B constant is used, the resistance value will not become large, and a practically excellent high-sensitivity thermistor can be obtained.
第１図、第２図はそれぞれ従来のサーミスタ・ボロメー
タの−部切欠斜視図、一部拡大構成図、第３図は本発明
の一実施を示すサーミスタボロメータの一部拡大構成図
、第４図は測定回路である。
２，３・・・…素子、７・…・・絶縁基板、８・・・…
サーミスタ、１０・・・・・・下部電極、１１・・・・
・・上部電極。
第１図第２図
第３図
第４図1 and 2 are respectively a partially cutaway perspective view and a partially enlarged configuration diagram of a conventional thermistor bolometer, FIG. 3 is a partially enlarged configuration diagram of a thermistor bolometer showing one embodiment of the present invention, and FIG. 4 is the measurement circuit. 2, 3...Element, 7...Insulating substrate, 8...
Thermistor, 10... Lower electrode, 11...
...Top electrode. Figure 1 Figure 2 Figure 3 Figure 4
Claims (1)
て、サフアイヤ，セラミツク，ガラスのような絶縁基板
上に下部電極を設け、この下部電極上にサーミスタ薄膜
を設け、このサーミスタ薄膜上に上部電極を設け、サー
ミスタ薄膜の膜厚方向に電流が流れるようにしたことを
特徴とするサーミスタ・ボロメータ。 ２ 上部電極が赤外線に対して透明であることを特徴と
する特許請求の範囲第１項記載のサーミスタ・ボロメー
タ。 ３ 上部電極が赤外線に対して黒体であることを特徴と
する特許請求の範囲第１項記載のサーミスタ・ボロメー
タ。[Scope of Claims] 1. In a thermistor used in the light receiving part of a bolometer, a lower electrode is provided on an insulating substrate such as sapphire, ceramic, or glass, a thermistor thin film is provided on the lower electrode, and a thermistor thin film is provided on the thermistor thin film. A thermistor bolometer characterized in that an upper electrode is provided so that current flows in the thickness direction of the thermistor thin film. 2. The thermistor bolometer according to claim 1, wherein the upper electrode is transparent to infrared rays. 3. The thermistor bolometer according to claim 1, wherein the upper electrode is a black body for infrared rays.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8888879A JPS6035016B2 (en) | 1979-07-13 | 1979-07-13 | Thermistor bolometer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8888879A JPS6035016B2 (en) | 1979-07-13 | 1979-07-13 | Thermistor bolometer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5612521A JPS5612521A (en) | 1981-02-06 |
| JPS6035016B2 true JPS6035016B2 (en) | 1985-08-12 |
Family
ID=13955503
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8888879A Expired JPS6035016B2 (en) | 1979-07-13 | 1979-07-13 | Thermistor bolometer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6035016B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58149201A (en) * | 1982-02-08 | 1983-09-05 | 北海製罐株式会社 | Method and device for boxing can cover |
| US6744346B1 (en) * | 1998-02-27 | 2004-06-01 | Micron Technology, Inc. | Electronic device workpieces, methods of semiconductor processing and methods of sensing temperature of an electronic device workpiece |
| US6229322B1 (en) | 1998-08-21 | 2001-05-08 | Micron Technology, Inc. | Electronic device workpiece processing apparatus and method of communicating signals within an electronic device workpiece processing apparatus |
| US6967497B1 (en) | 1998-08-21 | 2005-11-22 | Micron Technology, Inc. | Wafer processing apparatuses and electronic device workpiece processing apparatuses |
-
1979
- 1979-07-13 JP JP8888879A patent/JPS6035016B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5612521A (en) | 1981-02-06 |
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