JPS60254102A - Manufacture of optical circuit element - Google Patents

Manufacture of optical circuit element

Info

Publication number
JPS60254102A
JPS60254102A JP11143584A JP11143584A JPS60254102A JP S60254102 A JPS60254102 A JP S60254102A JP 11143584 A JP11143584 A JP 11143584A JP 11143584 A JP11143584 A JP 11143584A JP S60254102 A JPS60254102 A JP S60254102A
Authority
JP
Japan
Prior art keywords
optical circuit
circuit element
substrate
material layer
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11143584A
Other languages
Japanese (ja)
Other versions
JPH0658447B2 (en
Inventor
Minoru Kiyono
實 清野
Ippei Sawaki
一平 佐脇
Hiroki Nakajima
啓幾 中島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP59111435A priority Critical patent/JPH0658447B2/en
Publication of JPS60254102A publication Critical patent/JPS60254102A/en
Publication of JPH0658447B2 publication Critical patent/JPH0658447B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13Integrated optical circuits characterised by the manufacturing method

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

PURPOSE:To uniform the temperature distribution of the optical circuit element by providing a light shield layer in contact with at least electrodes on the substrate surface of the optical circuit element. CONSTITUTION:The optical circuit element which has an optical waveguide 2 and electrodes 3 formed on a substrate 1 is provided with the light shield material layer 4 of, for example, a black paint with high heat absorptivity. The light shield material layer 4 may be adhered on an electrode part, over the entire surface of the substrate, or to the reverse side of the substrate 1. When external heat is applied to this element, the light shield layer 4 becomes hot firstly. The metallic electrodes 3 have high heat conductivity, so the inside of the light shield material layer short-circuits thermall including the electrodes. Consequently, the temperature difference is eliminated and the external heat is relaxed.

Description

【発明の詳細な説明】 (1)発明の技術分野 本発明は光回路素子の製造方法、詳しくは光回路素子に
対し輻射熱等による吸熱、放熱を均一にし同素子内の温
度を平均的に保持するための遮光材を形成する方法に関
する。
DETAILED DESCRIPTION OF THE INVENTION (1) Technical Field of the Invention The present invention relates to a method for manufacturing an optical circuit element, and more specifically, a method for manufacturing an optical circuit element by uniformly absorbing and dissipating heat through radiant heat etc. to maintain an average temperature within the element. The present invention relates to a method of forming a light-shielding material for use in light-blocking materials.

(2)技術の背景 光通信技術の普及とともに、そこに使われる素子は多様
なものとなる傾向にある。これらの部品が使用される環
境は高温、低温、高湿等苛酷な、かつ変化する条件であ
り、これらの条件に耐えうる素子の研究が活発に進めら
れている。
(2) Background of the technology As optical communication technology becomes more widespread, the elements used there tend to become more diverse. The environments in which these parts are used are harsh and changing conditions such as high temperatures, low temperatures, and high humidity, and research into elements that can withstand these conditions is actively underway.

導波路デバイスは平板基板上に光ガイド(導波路)を作
り、その内に一体化された光回路素子を設けるものであ
り、量産性、小型化、一体化を目的として形成される。
A waveguide device is a device in which a light guide (waveguide) is formed on a flat substrate and an integrated optical circuit element is provided therein, and is formed for the purpose of mass production, miniaturization, and integration.

その−例である光スィッチは、リチウムナイオベート(
LiNb03)基板にチタン(Ti)を蒸着により被着
し熱拡散により導波路を作り、その上に電極を設けてス
イッチまたは変調機能をもたせたものである。
An example of this is an optical switch made of lithium niobate (
Titanium (Ti) is deposited on a LiNb03) substrate by vapor deposition, a waveguide is created by thermal diffusion, and electrodes are provided on the waveguide to provide a switch or modulation function.

(3)従来技術と問題点 ところで、光回路素子がもっている本来の性質は温度サ
イクルをかけると変化することが経験されている。電極
は金属材料で作られ、光のみならず輻射熱、放射熱など
を吸収し発熱し、金属電極の放(吸)熱係数はまわりの
金属の付いていない基板のそれとは異なり、その結果電
極が局部的に熱くなったり冷たくなったりする。
(3) Prior art and problems By the way, it has been experienced that the original properties of optical circuit elements change when subjected to temperature cycles. Electrodes are made of metal materials and generate heat by absorbing not only light but also radiant heat.The heat release (absorption) coefficient of metal electrodes is different from that of the surrounding substrate without metal, and as a result, the electrodes Feeling hot or cold locally.

導波路は幅例えば4μmのオーダーのものでそれが4〜
7μm間隔で配置されているので、前記した温度の不均
一性により強く影響され、このこともまた光回路素子の
特性の変化の原因である。
The width of the waveguide is, for example, on the order of 4 μm, and the width is on the order of 4 μm.
Since they are arranged at intervals of 7 μm, they are strongly affected by the temperature non-uniformity described above, which is also a cause of changes in the characteristics of the optical circuit element.

(4)発明の目的 本発明は上記従来の問題に鑑み、温度分布が均一化され
た光回路素子を提供することを目的とする。
(4) Purpose of the Invention In view of the above-mentioned conventional problems, an object of the present invention is to provide an optical circuit element with uniform temperature distribution.

(5)発明の構成 そしてこの目的は本発明によれば、複数の材料により構
成される光回路素子の基板表面の少なくとも電極に密着
して遮光材層を設けることを特徴とする光回路素子の製
造方法を提供することによって達成され、また前記遮光
材層と光回路素子基板の間に電気的、光学的、化学的絶
縁性をもった保護材でバッファ層を形成してもよい。
(5) Structure and object of the invention According to the present invention, an optical circuit element is provided with a light shielding material layer in close contact with at least an electrode on the surface of the substrate of the optical circuit element made of a plurality of materials. This can be achieved by providing a manufacturing method, and a buffer layer may be formed between the light shielding material layer and the optical circuit element substrate using a protective material having electrical, optical, and chemical insulation properties.

(6)発明の実施例 以下本発明の実施例を図面によって詳述する。(6) Examples of the invention Embodiments of the present invention will be described in detail below with reference to the drawings.

外部に温度変化が生じた場合、この変化は伝導熱、輻射
熱として素子に伝わる。このとき、素子が異なる材質か
ら構成されている場合、それぞれの材質により、吸熱係
数、伝導率が異なるため、素子中に温度分布が生ずる。
When a temperature change occurs outside, this change is transmitted to the element as conductive heat or radiant heat. At this time, when the element is made of different materials, each material has a different heat absorption coefficient and conductivity, so a temperature distribution occurs in the element.

通常温度変化により物質の屈折率が変化するため、温度
分布に従った屈折率分布が生ずる。光回路素子ではこの
ような屈折率分布が重要である場合が多い。これを除去
するため、本発明では筺体内部の素子に対して、これに
密着させて遮光材を設けたものである。
Since the refractive index of a substance usually changes due to temperature changes, a refractive index distribution follows the temperature distribution. Such a refractive index distribution is often important in optical circuit elements. In order to eliminate this, in the present invention, a light shielding material is provided in close contact with the element inside the housing.

第1図はLiNbO3基板1上に作られた光導波路2と
電極3を示している。電極は通常アルミニウム(^β)
等の金属を蒸着して形成される。かかる基板はSUS、
ガラスまたはAl製の台の上に配置される。
FIG. 1 shows an optical waveguide 2 and an electrode 3 made on a LiNbO3 substrate 1. Electrodes are usually aluminum (^β)
It is formed by vapor depositing metals such as Such a board is made of SUS,
It is placed on a table made of glass or Al.

この素子に外部から熱を加えた場合、例えばランプ照射
がなされまたはまわりが高温になった場合、電極3に用
いた金属の吸熱効率が高いため、電極部が選択的に加熱
される。この結果、電極下の屈折率が変化し、このスイ
ッチ特性が悪影響を受ける。
When heat is applied to this element from the outside, for example when it is irradiated with a lamp or the surroundings become high temperature, the electrode portions are selectively heated because the metal used for the electrodes 3 has a high heat absorption efficiency. As a result, the refractive index under the electrode changes and this switching characteristic is adversely affected.

これに対し、本発明によると第2図に示されるように遮
光材層4を設ける。遮光材は例えば熱吸収率の高い黒色
塗料などを用いる。そうすると素子内部の温度分布は均
一となり、電極金属の熱伝導率は高いため、結果的には
LiNbO31の表面層は面内で温度分布が均一となる
。なお第2図と第3図において、既に図示した部分と同
じ部分は同一符号を付して表示する。
In contrast, according to the present invention, a light shielding material layer 4 is provided as shown in FIG. For example, black paint with high heat absorption rate is used as the light shielding material. Then, the temperature distribution inside the element becomes uniform, and since the electrode metal has high thermal conductivity, the temperature distribution of the surface layer of LiNbO31 becomes uniform within the plane. Note that in FIGS. 2 and 3, the same parts as those already illustrated are designated by the same reference numerals.

遮光材は黒色の輻射熱吸収率が高いもので作ったから、
先ず遮光材層4が熱くなる。金属電極3は熱伝導性が高
いので遮光材層内部は電極を含め熱的に短絡した状態に
なる。その結果、温度差がなくなり、外部からの熱は緩
和されることになる。
The light shielding material was made of black material with high radiant heat absorption rate,
First, the light shielding material layer 4 becomes hot. Since the metal electrode 3 has high thermal conductivity, the inside of the light shielding material layer including the electrode is thermally short-circuited. As a result, there is no temperature difference, and heat from the outside is alleviated.

遮光材層がないときには、透過性をもった輻射熱は電極
を透過して下にある導波路2に達し、前記した如くその
部分の屈折率に変化を与え、素子の特性に影響を与えた
ものである。
When there is no light-shielding material layer, the transparent radiant heat passes through the electrode and reaches the waveguide 2 below, causing a change in the refractive index of that part as described above, which affects the characteristics of the element. It is.

遮光材層4は電極部分のみに、もしくは基板全面に被着
してもよく、または第2図に示す如くLjNbOa基板
1の裏側に被着してもよい。
The light shielding material layer 4 may be deposited only on the electrode portions, on the entire surface of the substrate, or on the back side of the LjNbOa substrate 1 as shown in FIG.

第3図は本発明の他の実施例を示し、この実施例におい
ては遮光材層4の下に更にバッファ層5を設ける。バッ
ファN5はアルミナ(An2.03)または二酸化シリ
コン(5302)で作る。バッファ層を設けることによ
り、素子は酸化、湿度等から電気的、光学的、化学的に
絶縁され保護されるとともに、遮光材層に用いた材料の
導電性等によるリークを防止する効果がある。
FIG. 3 shows another embodiment of the present invention, in which a buffer layer 5 is further provided below the light shielding material layer 4. Buffer N5 is made of alumina (An2.03) or silicon dioxide (5302). By providing the buffer layer, the element is electrically, optically, and chemically insulated and protected from oxidation, humidity, etc., and has the effect of preventing leakage due to the conductivity of the material used for the light shielding layer.

(7)発明の効果 以上詳細に説明した如く本発明によれば、光回路素子に
おいて素子に密着させて遮光材層を設けることにより光
回路素子内の温度分布を均一にし、外部からの熱による
素子特性の変化を防止するに効果大である。なお、遮光
材、バッファ層の材料は上記の例に限定されるものでな
く、光回路素子の種類、それの用いられる環境を考慮し
て適宜選定することができる。
(7) Effects of the Invention As explained in detail above, according to the present invention, by providing a light-shielding material layer in close contact with the optical circuit element, the temperature distribution inside the optical circuit element is made uniform, and heat from the outside is This is highly effective in preventing changes in device characteristics. Note that the materials for the light-shielding material and the buffer layer are not limited to the above examples, and can be appropriately selected in consideration of the type of optical circuit element and the environment in which it is used.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はバイポーラ光スィッチの一部断面を示す斜視図
、第2図は第3図は本発明実施例の断面図である。 1−LiNbO3基板、2−導波路、 3−電極、4−遮光材層、5−バッファ層第1図 第3図
FIG. 1 is a perspective view showing a partial cross section of a bipolar optical switch, and FIGS. 2 and 3 are cross sectional views of an embodiment of the present invention. 1-LiNbO3 substrate, 2-waveguide, 3-electrode, 4-light shielding material layer, 5-buffer layer Fig. 1 Fig. 3

Claims (1)

【特許請求の範囲】 +11複数の材料により構成される光回路素子の基板表
面の少なくとも電極に密着して遮光材層を設けることを
特徴とする光回路素子の製造方法。 (2)前記遮光材層と光回路素子基板との間に電気的、
光学的、化学的絶縁性をもった保護材でバッファ層を形
成することを特徴とする特許請求の範囲第1項記載の方
法。
[Scope of Claims] +11 A method for manufacturing an optical circuit element, characterized in that a light-shielding material layer is provided in close contact with at least an electrode on the surface of a substrate of an optical circuit element made of a plurality of materials. (2) There is an electrical connection between the light shielding material layer and the optical circuit element substrate.
2. The method according to claim 1, wherein the buffer layer is formed of a protective material having optical and chemical insulating properties.
JP59111435A 1984-05-31 1984-05-31 Optical circuit element Expired - Lifetime JPH0658447B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59111435A JPH0658447B2 (en) 1984-05-31 1984-05-31 Optical circuit element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59111435A JPH0658447B2 (en) 1984-05-31 1984-05-31 Optical circuit element

Publications (2)

Publication Number Publication Date
JPS60254102A true JPS60254102A (en) 1985-12-14
JPH0658447B2 JPH0658447B2 (en) 1994-08-03

Family

ID=14561118

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59111435A Expired - Lifetime JPH0658447B2 (en) 1984-05-31 1984-05-31 Optical circuit element

Country Status (1)

Country Link
JP (1) JPH0658447B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4904037A (en) * 1987-08-28 1990-02-27 Hitachi, Ltd. Waveguide type optical device with thermal compensation layers

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57173819A (en) * 1981-04-20 1982-10-26 Matsushita Electric Ind Co Ltd Optical switch

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57173819A (en) * 1981-04-20 1982-10-26 Matsushita Electric Ind Co Ltd Optical switch

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4904037A (en) * 1987-08-28 1990-02-27 Hitachi, Ltd. Waveguide type optical device with thermal compensation layers

Also Published As

Publication number Publication date
JPH0658447B2 (en) 1994-08-03

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