JPH0647269A - Vacuum treating device - Google Patents
Vacuum treating deviceInfo
- Publication number
- JPH0647269A JPH0647269A JP4200154A JP20015492A JPH0647269A JP H0647269 A JPH0647269 A JP H0647269A JP 4200154 A JP4200154 A JP 4200154A JP 20015492 A JP20015492 A JP 20015492A JP H0647269 A JPH0647269 A JP H0647269A
- Authority
- JP
- Japan
- Prior art keywords
- vacuum
- gas
- dry
- processing apparatus
- exhaust gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007789 gas Substances 0.000 claims abstract description 53
- 238000004519 manufacturing process Methods 0.000 claims abstract description 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 13
- 239000001301 oxygen Substances 0.000 claims abstract description 13
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 13
- 238000007865 diluting Methods 0.000 claims abstract description 4
- 238000012545 processing Methods 0.000 claims description 15
- 238000002156 mixing Methods 0.000 claims description 12
- 238000001784 detoxification Methods 0.000 claims description 5
- 238000004891 communication Methods 0.000 claims description 2
- 239000000356 contaminant Substances 0.000 abstract 3
- 239000002912 waste gas Substances 0.000 abstract 2
- 238000009489 vacuum treatment Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 9
- 238000010790 dilution Methods 0.000 description 7
- 239000012895 dilution Substances 0.000 description 7
- 238000009423 ventilation Methods 0.000 description 5
- 230000005856 abnormality Effects 0.000 description 4
- 238000004880 explosion Methods 0.000 description 4
- 230000002159 abnormal effect Effects 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 229910000039 hydrogen halide Inorganic materials 0.000 description 1
- 239000012433 hydrogen halide Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000011866 long-term treatment Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002341 toxic gas Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
- Treating Waste Gases (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、真空処理装置に係り、
特に、ドライエッチング、ＣＶＤ（化学蒸着）、イオン
注入などの工程に代表される半導体や液晶など精密電子
部品の製造装置（以下、真空製造装置という）の排気処
理を含めた真空処理装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vacuum processing apparatus,
In particular, the present invention relates to a vacuum processing apparatus including exhaust processing of a manufacturing apparatus for precision electronic components such as semiconductors and liquid crystals (hereinafter referred to as a vacuum manufacturing apparatus) represented by processes such as dry etching, CVD (chemical vapor deposition), and ion implantation.
【０００２】[0002]
【従来の技術】半導体製造プロセスの排気系には、ウエ
ハープロセスに供給された未反応ガスや、プロセスであ
らたに生成した数多くのガス成分が含有されている。こ
れらの中には酸素との親和力がきわめて強くて酸素が共
存すると自然発火的に燃焼するガス（ＳｉＨ4 など）や
水分と反応して腐食性のはげしいハロゲン化水素を発生
するガス（ＳｉＦ4 ，Ｃｌ2 など）が含まれている。こ
のため、排気系に大気が混入すると、大気中の酸素や水
分により発火・爆発、構成材料の腐食を引き起す。2. Description of the Related Art An exhaust system of a semiconductor manufacturing process contains unreacted gas supplied to a wafer process and many gas components newly generated in the process. Among these, there is a very strong affinity with oxygen and a gas that spontaneously combusts when oxygen coexists (such as SiH 4 ) or a gas that reacts with moisture to generate corrosive hydrogen halide (SiF 4 , Cl 2 etc.) is included. Therefore, when the atmosphere is mixed in the exhaust system, oxygen and moisture in the atmosphere cause ignition / explosion and corrosion of constituent materials.
【０００３】これ迄、これらのガスを取扱う工程では、
定期点検保修時や停電時に装置が停止したときに細心の
注意を払って系内のガスをＮ2 などの不活性ガスで置換
している。また、万一の事態が発生しないように装置及
び配管・弁の材料に耐久性にすぐれ信頼性の高いものを
採用したり、排ガスを多量の不活性ガスで常時希釈して
排気するなどの方法がとられている。又、真空ポンプ乾
式除害装置をボックス内に収納し、工場内の排気ダクト
に接続して換気することもある。Until now, in the process of handling these gases,
The gas in the system is replaced with an inert gas such as N 2 with great care when the equipment is stopped during periodic inspection and maintenance or during a power failure. Also, in order to prevent accidents, adopt materials that are highly durable and highly reliable, such as equipment and piping / valve materials, or exhaust gas by constantly diluting exhaust gas with a large amount of inert gas. Has been taken. In addition, a vacuum pump dry abatement device may be housed in a box and connected to an exhaust duct in a factory for ventilation.
【０００４】[0004]
【発明が解決しようとする課題】従来の対処では、危険
が予知できる停電時、定期点検保修時には有効である
が、日常の操作中における異常事態の予知あるいは早期
発見は困難であり、特にこれらの有害ガスを長期間にわ
たって処理したことにより、発火・爆発を誘起する恐れ
のある乾式除害装置の除害カラムに対しては万全の対応
ではなかった。本発明は、上記の日常運転時の事故を予
知して、未然に防止することのできる真空処理装置を提
供することを課題とする。The conventional measures are effective at the time of a power outage in which danger can be predicted, and at the time of regular inspection and maintenance, but it is difficult to predict or detect an abnormal situation during daily operation. It was not a perfect countermeasure for the detoxification column of the dry detoxification device, which may cause ignition or explosion due to the long-term treatment of harmful gas. It is an object of the present invention to provide a vacuum processing apparatus capable of predicting the above-mentioned accident during daily operation and preventing it in advance.
【０００５】[0005]
【課題を解決するための手段】上記課題を解決するため
に、本発明では、真空製造装置と該装置に連通して設け
た真空ポンプと該真空ポンプで吸引される排気ガスを処
理する乾式除害装置からなる真空処理装置において、前
記乾式除害装置の入口配管及び／又は出口配管に大気混
入センサを配備したものである。前記大気混入センサと
しては、酸素濃度計及び／又は水分計を用いるのがよ
い。In order to solve the above-mentioned problems, according to the present invention, a vacuum manufacturing apparatus, a vacuum pump provided in communication with the apparatus, and a dry type removal apparatus for treating exhaust gas sucked by the vacuum pump. In a vacuum processing apparatus composed of a harmful device, an atmospheric air mixing sensor is provided in an inlet pipe and / or an outlet pipe of the dry type harm removing device. It is preferable to use an oxygen concentration meter and / or a moisture meter as the air mixing sensor.
【０００６】また、前記真空処理装置には、大気混入セ
ンサの出力信号により作動する真空製造装置へのプロセ
スガス供給停止機構、吸引ガスへの希釈用Ｎ2 ガス流入
機構及び排気ガスの乾式除害装置バイパス弁開放機構を
備えるのがよく、それにより大気混入センサにより異常
を検知した際に直に対応することができる。In the vacuum processing apparatus, a process gas supply stop mechanism for the vacuum manufacturing apparatus, which operates according to the output signal of the atmospheric air mixing sensor, an N 2 gas inflow mechanism for diluting the suction gas, and a dry detoxification of the exhaust gas. It is preferable to provide a device bypass valve opening mechanism so that when an abnormality is detected by the air mixing sensor, it is possible to directly respond to the abnormality.
【０００７】[0007]
【作用】正常な運転がなされている限りにおいては、プ
ロセスガス流量や半導体製造装置の操作条件は非常に厳
密にコントロールされているので、真空ポンプで排気さ
れるガスの組成や各成分の濃度、ガス流量の変動は非常
に少い。例えば、ポリシリコンの成膜工程から排出され
る排ガスの一例を以下に示す。 ＳｉＨ4 ３８０ｐｐｍ Ｈ2 ３２００ｐｐｍ これは、希釈酸素が８０リットル／ｍｉｎの場合である
が、それが低下すると爆発範囲に入るし、その際に空気
の混入があって酸素濃度があがれば自然発火も起こり得
る。As long as normal operation is carried out, the process gas flow rate and the operating conditions of the semiconductor manufacturing equipment are controlled very strictly, so the composition of the gas exhausted by the vacuum pump and the concentration of each component, The fluctuation of the gas flow rate is very small. For example, an example of the exhaust gas discharged from the polysilicon film forming process is shown below. SiH 4 380ppm H 2 3200ppm This is the case when the diluted oxygen is 80 liters / min, but when it decreases, it enters the explosive range, and at that time, if air is mixed and the oxygen concentration rises, spontaneous ignition also occurs. obtain.
【０００８】また、アルミエッチングで多用されるＢＣ
ｌ3 のような加水分解性ガスを処理した乾式除害装置で
は、その除害原理によらずガス流入部にそれらのガスが
滞留しており、大気が混入するとその水分と反応して発
熱するだけでなくＢ（ＯＨ）3 のような固形物を生成し
閉塞の原因となると同時に発生するＨＣｌにより接ガス
部が激しく腐食し配管にピンホールをあけ有毒ガスの漏
えいにつながる。このように酸素分圧や水分の変化をセ
ンサで検知して、通常希釈用Ｎ2 ガス量の低下、大気の
混入などの異常事態を予知することは大災害を未然に防
止する上できわめて有効な手段である。BC which is often used in aluminum etching
In a dry type abatement device that treats a hydrolyzable gas such as l 3 , those gases remain in the gas inflow section regardless of the abatement principle, and when the atmosphere is mixed, it reacts with the moisture and generates heat. Not only that, but solid substances such as B (OH) 3 are generated to cause clogging, and at the same time, HCl that is generated corrodes the gas-contacting part violently and opens a pin hole in the pipe, leading to leakage of toxic gas. In this way, detecting changes in oxygen partial pressure and water with a sensor and predicting abnormal situations such as a decrease in the amount of N 2 gas for normal dilution and atmospheric mixing is extremely effective in preventing major disasters. It is a means.
【０００９】酸素分圧が上昇しうるケースとしては 半導体製造装置の操作ミス又は故障による大気混入 半導体製造装置の操作ミス又は故障による通常希釈
用Ｎ2 の低下 半導体製造装置〜乾式除害装置の配管（真空ポンプ
本体を含む）の不具合、例えば配管が腐食されることに
より、腐食孔（ピンホール）からの大気混入 などの原因があげられる。本発明によれば、このような
大気の混入を迅速に検知でき、万一混入するとセンサか
らの異常信号の出力によって、プロセスガスの供給停
止、希釈用Ｎ2 ガスの流入、乾式除害装置バイパス弁開
放等により直ちに対応でき、発火・爆発等の事故を予防
できる。As a case where the oxygen partial pressure may rise, air is mixed due to an operation error or a failure of the semiconductor manufacturing apparatus. A normal dilution N 2 is lowered due to an operation error or a failure of the semiconductor manufacturing apparatus. Problems (including the vacuum pump body), such as corrosion of piping, may cause atmospheric contamination from the corrosion holes (pinholes). According to the present invention, such a mixture of the atmosphere can be quickly detected, and if it is mixed, an abnormal signal is output from the sensor to stop the supply of the process gas, the inflow of the N 2 gas for dilution, and the dry detoxification device bypass. You can respond immediately by opening the valve and prevent accidents such as ignition and explosion.
【００１０】[0010]
【実施例】以下、本発明を図面を用いて具体的に説明す
るが、本発明はこれに限定されるものではない。 実施例１ 図１は、本発明の真空処理装置の概略を示す系統図であ
る。図において、半導体製造装置１は真空ポンプ２によ
って真空が保持され、プロセスガスが１６から流入され
ている。真空ポンプ２では排気ガスが６から吸引され、
通常希釈ライン１５からのＮ2 ガスによって希釈され
て、排気ガスライン７から排出される。そして、排気ガ
スライン７からの排気ガスは、乾式除害装置３に流入し
て、除害剤が充填されたカラム４内で有害ガスを除去し
て排気ガスライン８から排気ダクトに排出される。乾式
除害装置３内には、充填カラム４をバイパスするバイパ
ス弁５を有するバイパス通路を設けて、排気ガスライン
７からの排気ガスを直接排気ガスライン８に排出させる
ことができるようにしてもよい。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be specifically described below with reference to the drawings, but the present invention is not limited thereto. Example 1 FIG. 1 is a system diagram showing an outline of a vacuum processing apparatus of the present invention. In the figure, the semiconductor manufacturing apparatus 1 is maintained in vacuum by a vacuum pump 2, and process gas is introduced from 16. In the vacuum pump 2, exhaust gas is sucked from 6,
It is usually diluted with N 2 gas from the dilution line 15 and discharged from the exhaust gas line 7. Then, the exhaust gas from the exhaust gas line 7 flows into the dry type abatement device 3, the harmful gas is removed in the column 4 filled with the abatement agent, and the exhaust gas is exhausted from the exhaust gas line 8 to the exhaust duct. . A bypass passage having a bypass valve 5 that bypasses the packed column 4 is provided in the dry abatement device 3 so that the exhaust gas from the exhaust gas line 7 can be directly discharged to the exhaust gas line 8. Good.
【００１１】上記のような半導体製造装置を含む真空処
理装置において、本発明では、真空ポンプ２からの排気
ガスライン７に排気ガス分岐配管１３を取り付けてその
配管１３に水分計又は酸素濃度計１２が接続されてい
る。そして、この水分計又は酸素濃度計１２の信号を半
導体製造装置１内に設けたコントロールボックス１４に
送り、送られた信号が異常を示した場合は、コントロー
ルボックス１４からの指令により、プロセスガス流入ラ
イン１６に設けた自動弁を閉止し、Ｎ2 ガス希釈ライン
１５に設けた自動弁１７及び１８を開とし、また、排気
ガス乾式除害装置３をバイパスする通路に設けたバイパ
ス弁５を開放することのできる機構としている。In the vacuum processing apparatus including the semiconductor manufacturing apparatus as described above, according to the present invention, the exhaust gas branch pipe 13 is attached to the exhaust gas line 7 from the vacuum pump 2 and the moisture meter or the oxygen concentration meter 12 is attached to the pipe 13. Are connected. Then, the signal of the moisture meter or the oxygen concentration meter 12 is sent to the control box 14 provided in the semiconductor manufacturing apparatus 1, and when the sent signal indicates an abnormality, a command from the control box 14 causes a process gas inflow. The automatic valve provided in the line 16 is closed, the automatic valves 17 and 18 provided in the N 2 gas dilution line 15 are opened, and the bypass valve 5 provided in the passage bypassing the exhaust gas dry abatement system 3 is opened. It is a mechanism that can be used.
【００１２】なお、上記図１において、９は真空ポンプ
ボックスの換気ダクトであり、１０は除害装置ボックス
の換気ダクトであり、１１は集合主ダクトである。ま
た、大気混入センサは入口配管でなく、出口配管あるい
は入口と出口配管の両方に設けてもよい。In FIG. 1, 9 is a ventilation duct of the vacuum pump box, 10 is a ventilation duct of the abatement device box, and 11 is a collective main duct. Further, the air mixing sensor may be provided not at the inlet pipe but at the outlet pipe or both the inlet and outlet pipes.
【００１３】[0013]
【発明の効果】本発明によれば、排気系の大気の混入又
は希釈用Ｎ2 ガスの設定異常を酸素濃度計又は水分計で
早期に検知することによって、発火・爆発などの危険を
未然に防止することができ、より安全な運転が確保され
る。EFFECTS OF THE INVENTION According to the present invention, the risk of ignition, explosion, etc. can be obviated by detecting the mixing of the atmosphere of the exhaust system or the setting abnormality of the dilution N 2 gas with an oxygen concentration meter or a moisture meter at an early stage. Can be prevented, and safer driving is ensured.
【図１】本発明の真空処理装置の概略を示す系統図。FIG. 1 is a system diagram showing an outline of a vacuum processing apparatus of the present invention.
１：半導体製造装置 ２：真空ポンプ ３：乾式除害装置 ４：除害剤充填カラム ５：バイパス弁 ６、７、８：排ガス排気ライン ９：真空ポンプ収納ボックスの換気ダクト １０：乾式除害装置収納ボックスの換気ダクト １１：集合主ダクト １２：大気混入センサ １３：大気混入センサへの排ガス分岐配管 １４：コントロールボックス １５：Ｎ2 ガス希釈ライン １６：プロセスガス流入ライン １７、１８：自動弁1: Semiconductor manufacturing device 2: Vacuum pump 3: Dry abatement device 4: Detoxifying agent filling column 5: Bypass valve 6, 7, 8: Exhaust gas exhaust line 9: Ventilation duct of vacuum pump storage box 10: Dry abatement device Ventilation duct of storage box 11: Collecting main duct 12: Air mixing sensor 13: Exhaust gas branch pipe to air mixing sensor 14: Control box 15: N 2 gas dilution line 16: Process gas inflow line 17, 18: Automatic valve
フロントページの続き (72)発明者 辻村 学 東京都大田区羽田旭町11番１号 株式会社 荏原製作所内 (72)発明者 福永 明 神奈川県藤沢市本藤沢４丁目２番１号 株 式会社荏原総合研究所内Front page continued (72) Inventor Manabu Tsujimura 11-1 Haneda Asahi-cho, Ota-ku, Tokyo Inside the EBARA CORPORATION (72) Inventor Akira Fukunaga 4-2-1 Motofujisawa, Fujisawa-shi, Kanagawa Ebara Inside the research institute
Claims (3)
真空ポンプと該真空ポンプで吸引される排気ガスを処理
する乾式除害装置からなる真空処理装置において、前記
乾式除害装置の入口配管及び／又は出口配管に大気混入
センサを配備したことを特徴とする真空処理装置。1. A vacuum processing apparatus comprising a vacuum manufacturing apparatus, a vacuum pump provided in communication with the apparatus, and a dry-type abatement apparatus for processing exhaust gas sucked by the vacuum pump, the inlet of the dry-type abatement apparatus. A vacuum processing apparatus, wherein an atmospheric air mixing sensor is provided in the pipe and / or the outlet pipe.
又は水分計であることを特徴とする請求項１記載の真空
処理装置。2. The air mixing sensor is an oxygen concentration meter and / or
Alternatively, the vacuum processing apparatus according to claim 1, which is a moisture meter.
の出力信号により作動する真空製造装置へのプロセスガ
ス供給停止機構、吸引ガスへの希釈用Ｎ2 ガス流入機構
及び排気ガスの乾式除害装置バイパス弁開放機構を備え
ていることを特徴とする請求項１又は２記載の真空処理
装置。3. The vacuum processing apparatus comprises a process gas supply stop mechanism for a vacuum manufacturing apparatus which operates according to an output signal of an atmospheric air mixing sensor, a diluting N 2 gas inflow mechanism for sucking gas, and a dry type detoxification of exhaust gas. The vacuum processing apparatus according to claim 1 or 2, further comprising an apparatus bypass valve opening mechanism.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4200154A JP2511363B2 (en) | 1992-07-06 | 1992-07-06 | Vacuum processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4200154A JP2511363B2 (en) | 1992-07-06 | 1992-07-06 | Vacuum processing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0647269A true JPH0647269A (en) | 1994-02-22 |
| JP2511363B2 JP2511363B2 (en) | 1996-06-26 |
Family
ID=16419691
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4200154A Expired - Fee Related JP2511363B2 (en) | 1992-07-06 | 1992-07-06 | Vacuum processing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2511363B2 (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003135952A (en) * | 2001-11-01 | 2003-05-13 | Nec Corp | Plasma treating system and plasma treating method |
| JP2007014909A (en) * | 2005-07-08 | 2007-01-25 | Sumitomo Electric Ind Ltd | Exhaust gas treatment apparatus |
| JP2012207888A (en) * | 2011-03-30 | 2012-10-25 | Edwards Kk | Detoxifying apparatus |
| KR20150108328A (en) * | 2014-03-17 | 2015-09-25 | 가부시키가이샤 에바라 세이사꾸쇼 | Vacuum pump with abatement function |
| KR20150108327A (en) * | 2014-03-17 | 2015-09-25 | 가부시키가이샤 에바라 세이사꾸쇼 | Vacuum pump with abatement function |
| KR20150139514A (en) * | 2013-04-04 | 2015-12-11 | 에드워즈 리미티드 | Vacuum pumping and abatement system |
| US11130271B2 (en) | 2016-02-19 | 2021-09-28 | Nissei Asb Machine Co., Ltd. | Blow molding device and blow molding method |
| US11472091B2 (en) | 2015-10-29 | 2022-10-18 | Nissei Asb Machine Co., Ltd. | Two step blow molding unit, apparatus and method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS645639U (en) * | 1987-06-25 | 1989-01-12 | ||
| JPH0240492A (en) * | 1988-07-30 | 1990-02-09 | Kobe Steel Ltd | Interlock device for hot hydrostatic pressure apparatus |
-
1992
- 1992-07-06 JP JP4200154A patent/JP2511363B2/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS645639U (en) * | 1987-06-25 | 1989-01-12 | ||
| JPH0240492A (en) * | 1988-07-30 | 1990-02-09 | Kobe Steel Ltd | Interlock device for hot hydrostatic pressure apparatus |
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003135952A (en) * | 2001-11-01 | 2003-05-13 | Nec Corp | Plasma treating system and plasma treating method |
| JP2007014909A (en) * | 2005-07-08 | 2007-01-25 | Sumitomo Electric Ind Ltd | Exhaust gas treatment apparatus |
| JP4501799B2 (en) * | 2005-07-08 | 2010-07-14 | 住友電気工業株式会社 | Exhaust gas treatment equipment |
| JP2012207888A (en) * | 2011-03-30 | 2012-10-25 | Edwards Kk | Detoxifying apparatus |
| KR20150139514A (en) * | 2013-04-04 | 2015-12-11 | 에드워즈 리미티드 | Vacuum pumping and abatement system |
| US10300433B2 (en) | 2013-04-04 | 2019-05-28 | Edwards Limited | Vacuum pumping and abatement system |
| JP2016514825A (en) * | 2013-04-04 | 2016-05-23 | エドワーズ リミテッド | Vacuum pumping and abatement system |
| KR20150108328A (en) * | 2014-03-17 | 2015-09-25 | 가부시키가이샤 에바라 세이사꾸쇼 | Vacuum pump with abatement function |
| JP2015195344A (en) * | 2014-03-17 | 2015-11-05 | 株式会社荏原製作所 | Vacuum pump with detoxification function |
| JP2015194150A (en) * | 2014-03-17 | 2015-11-05 | 株式会社荏原製作所 | Vacuum pump having detoxification function |
| KR20150108327A (en) * | 2014-03-17 | 2015-09-25 | 가부시키가이샤 에바라 세이사꾸쇼 | Vacuum pump with abatement function |
| US10641256B2 (en) | 2014-03-17 | 2020-05-05 | Ebara Corporation | Vacuum pump with abatement function |
| US10641272B2 (en) | 2014-03-17 | 2020-05-05 | Ebara Corporation | Vacuum pump with abatement function |
| US11472091B2 (en) | 2015-10-29 | 2022-10-18 | Nissei Asb Machine Co., Ltd. | Two step blow molding unit, apparatus and method |
| US11130271B2 (en) | 2016-02-19 | 2021-09-28 | Nissei Asb Machine Co., Ltd. | Blow molding device and blow molding method |
| US11731337B2 (en) | 2016-02-19 | 2023-08-22 | Nissei Asb Machine Co., Ltd. | Blow molding device and blow molding method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2511363B2 (en) | 1996-06-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI499450B (en) | Systems and methods for treating flammable effluent gases from manufacturing processes | |
| JP2008520435A5 (en) | ||
| JP2511363B2 (en) | Vacuum processing equipment | |
| US5827339A (en) | Apparatus for generating chemical-free dry air | |
| KR101929696B1 (en) | Ion implanter comprising integrated ventilation system | |
| CN108591826A (en) | Gas handling system and processing method | |
| CN208253187U (en) | Gas handling system | |
| US5635242A (en) | Method and apparatus for preventing rupture and contamination of an ultra-clean APCVD reactor during shutdown | |
| CN116190279A (en) | Tail gas emission device and semiconductor heat treatment equipment | |
| US5176889A (en) | Method and apparatus for treatment of NF3 gas | |
| JPS5998295A (en) | Alarm and controller for semiconductor plant or the like | |
| JPH0647268A (en) | Operating method of vacuum treating device | |
| US20060002830A1 (en) | Wet abatemenbt system for waste SiH4 | |
| JP6248360B2 (en) | Exhaust gas treatment system | |
| US10586744B2 (en) | Method for optimizing dry absorber efficiency and lifetime in epitaxial applications | |
| JPS62237929A (en) | Method and device for treating nitrogen trifluoride gas | |
| JPH10321636A (en) | Solid manufacture device | |
| US5401473A (en) | Method and apparatus for treatment of NF3 gas | |
| KR900006259B1 (en) | Vacuum system for chemical vapor deposition | |
| JPH0623220A (en) | Dry type harm-removing device | |
| JPH0237103Y2 (en) | ||
| KR920008039B1 (en) | Vacuum system for rapid thermal process | |
| JPH0237105Y2 (en) | ||
| TW202417675A (en) | Flow control arrangements with enclosed flow switches and isolation valves, semiconductor processing systems, and flow control methods | |
| JP2006055824A (en) | Exhaust gas detoxifying apparatus and exhaust gas detoxifying method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |