CN108591826A - Gas handling system and processing method - Google Patents
Gas handling system and processing method Download PDFInfo
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- CN108591826A CN108591826A CN201810366719.5A CN201810366719A CN108591826A CN 108591826 A CN108591826 A CN 108591826A CN 201810366719 A CN201810366719 A CN 201810366719A CN 108591826 A CN108591826 A CN 108591826A
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- Prior art keywords
- nitrogen
- gas
- pump housing
- exhaust piping
- pipeline
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- 238000003672 processing method Methods 0.000 title claims abstract description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 507
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 255
- 239000007789 gas Substances 0.000 claims abstract description 198
- JJWKPURADFRFRB-UHFFFAOYSA-N carbonyl sulfide Chemical compound O=C=S JJWKPURADFRFRB-UHFFFAOYSA-N 0.000 claims abstract description 88
- 238000004880 explosion Methods 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 10
- 239000012495 reaction gas Substances 0.000 claims abstract description 7
- 238000007865 diluting Methods 0.000 claims abstract description 5
- 238000012544 monitoring process Methods 0.000 claims description 20
- 238000010790 dilution Methods 0.000 claims description 13
- 239000012895 dilution Substances 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 12
- 238000007789 sealing Methods 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 238000009434 installation Methods 0.000 claims description 5
- 238000009826 distribution Methods 0.000 claims description 4
- 238000002156 mixing Methods 0.000 claims description 3
- 230000002159 abnormal effect Effects 0.000 claims description 2
- 238000004659 sterilization and disinfection Methods 0.000 claims description 2
- 238000002485 combustion reaction Methods 0.000 description 6
- 238000000605 extraction Methods 0.000 description 6
- 230000002269 spontaneous effect Effects 0.000 description 6
- 238000011068 loading method Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- XOCUXOWLYLLJLV-UHFFFAOYSA-N [O].[S] Chemical compound [O].[S] XOCUXOWLYLLJLV-UHFFFAOYSA-N 0.000 description 1
- XKMRRTOUMJRJIA-UHFFFAOYSA-N ammonia nh3 Chemical compound N.N XKMRRTOUMJRJIA-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000003113 dilution method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
- F17D—PIPE-LINE SYSTEMS; PIPE-LINES
- F17D1/00—Pipe-line systems
- F17D1/02—Pipe-line systems for gases or vapours
- F17D1/04—Pipe-line systems for gases or vapours for distribution of gas
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
- F17D—PIPE-LINE SYSTEMS; PIPE-LINES
- F17D3/00—Arrangements for supervising or controlling working operations
- F17D3/01—Arrangements for supervising or controlling working operations for controlling, signalling, or supervising the conveyance of a product
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
- F17D—PIPE-LINE SYSTEMS; PIPE-LINES
- F17D3/00—Arrangements for supervising or controlling working operations
- F17D3/12—Arrangements for supervising or controlling working operations for injecting a composition into the line
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
- F17D—PIPE-LINE SYSTEMS; PIPE-LINES
- F17D5/00—Protection or supervision of installations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The present invention relates to a kind of gas handling system and processing method, system includes that first pump housing of exhaust system is connect with wafer vacuum reative cell, and gas exhaust piping is connect with first, second pump housing；Nitrogen pipeline is connect with nitrogen feed system and gas exhaust piping, and the nitrogen supplied in nitrogen feed system is transported to the carbonyl sulfide concentration to explosion ratio lower limit that gas exhaust piping dilutes in the first mixed gas or less by nitrogen pipeline；It is to be distributed from the nitrogen that nitrogen feed system is supplied to each factory service equipment supplied to the nitrogen in nitrogen pipeline.Method includes being put into wafer into wafer vacuum reative cell and being continually fed into reaction gas；Nitrogen is transported in gas exhaust piping and is diluted to carbonyl sulfide by nitrogen pipeline；Gas in gas exhaust piping is pumped into its inside and is discharged after diluting again by second pump housing.The present invention solves the problems, such as that carbonyl sulfide excessive concentration occurs explosion and do not increase nitrogen feed system burden in gas exhaust piping.
Description
Technical field
The present invention relates to gas handling techniques field, more particularly to a kind of gas handling system and processing method.
Background technology
It often needs to use carbonyl sulfide (cos) gas during crystal round etching, but carbonyl sulfide gas belongs to inflammable easy
Gas explosion body is likely to occur spontaneous combustion or explosion when the concentration of carbonyl sulfide reaches 11.9%~29%.Therefore, in crystal round etching
Wafer vacuum reative cell after need increase gas dilution system dilution wafer vacuum reative cell in carbonyl sulfide.It is existing
Carbonyl sulfide dilution is carried out in the end of gas exhaust piping of extraction carbonyl sulfide, but since carbonyl sulfide gas exists
Concentration has been able to reach 13.15% when being just pumped into gas exhaust piping, within the scope of the explosion ratio in carbonyl sulfide, therefore holds
Easily there is safety accident, causes equipment and hazard to person.On the other hand, existing in order to reduce the occurrence probability of safety accident
Mode is each section of cohesive position installation sealing ring and package explosion-proof blanket in gas exhaust piping, to reduce the damage to equipment and the person
It is bad.But since gas exhaust piping is long and needs explosion-proof blanket to be mounted excessive, operating personnel need working at height to carry out explosion-proof blanket
Installation and maintenance, therefore easily cause to fall and the perils such as pipeline explosion occur.
Disclosed above- mentioned information is only used for reinforcing the understanding of the background to the present invention in the background technology, therefore it may be wrapped
Containing the information for not being formed as the prior art that those of ordinary skill in the art are known.
Invention content
In view of this, a kind of gas handling system of offer of the embodiment of the present invention and processing method, existing to solve or alleviate
Technical problem present in technology at least provides a kind of beneficial selection.
What the technical solution of the embodiment of the present invention was realized in：
According to one embodiment of present invention, a kind of gas handling system is provided, including：
An at least exhaust system has first pump housing, second pump housing and gas exhaust piping；First pump housing and a wafer are true
Empty reative cell connection, the inlet end of the gas exhaust piping are connect with first pump housing, and first pump housing is true by the wafer
The first mixed gas in empty reative cell is pumped into the gas exhaust piping；The outlet side of the gas exhaust piping and second pump housing
Connection；First mixed gas includes carbonyl sulfide；
Nitrogen feed system is used for each factory service equipment the supply of nitrogen；And
Nitrogen pipeline is connect, the nitrogen with the inlet end of the nitrogen feed system and the gas exhaust piping
Pipeline is for the nitrogen supplied in the nitrogen feed system to be transported at the inlet end of the gas exhaust piping, with dilution
Below the carbonyl sulfide concentration to explosion ratio lower limit in first mixed gas；
Wherein, it is to be set from the nitrogen feed system supplied to each factory service supplied to the nitrogen in the nitrogen pipeline
It is distributed in standby nitrogen, and the nitrogen amount in the nitrogen feed system does not increase；Described in the first mixed gas warp
The second mixed gas is produced after nitrogen dilution, second mixed gas is transported to second pump via the gas exhaust piping
Body, second pump housing are used to the second mixed gas in the gas exhaust piping being discharged.
In some embodiments, the factory service equipment includes second pump housing, and the nitrogen feed system is described the
Two pump housing the supply of nitrogen, second pump housing be used for using nitrogen by the carbonyl sulfide in second mixed gas again
It dilutes and second pump housing is discharged；
Wherein, the nitrogen being supplied in the nitrogen pipeline is to be supplied to second pump housing from the nitrogen feed system
Nitrogen in distribute, the nitrogen feed system is supplied to the nitrogen amount of the nitrogen pipeline to be less than and is supplied to described second
The nitrogen amount of the pump housing.
In some embodiments, further include：
Volume control device is arranged in the nitrogen pipeline, the flow for controlling nitrogen in the nitrogen pipeline；
Control unit is electrically connected with the volume control device and the nitrogen feed system, and described control unit is used
The volume control device described in the monitoring nitrogen feed system and monitoring and controlling.
In some embodiments, the volume control device includes the pressure gauge being arranged in the nitrogen pipeline, pressure regulation
Valve, flowmeter and flow valve；Described control unit and the pressure gauge, the pressure regulator valve, the flowmeter and the flow
Valve is electrically connected, and described control unit controls the pressure regulation valve opening by monitoring the pressure gauge, and by monitoring the stream
Gauge controls the flow valve opening, to adjust the nitrogen amount conveyed in the nitrogen pipeline.
In some embodiments, described control unit includes monitoring pipeline and pressure controller, the monitoring pipeline and institute
It states nitrogen pipeline to be arranged in parallel and connect with the nitrogen feed system, the pressure controller is by monitoring the monitoring pipeline
In nitrogen amount, to monitor the gas supply situation of the nitrogen feed system.
In some embodiments, described control unit is also electrically connected with the wafer vacuum reative cell, according to the institute of monitoring
The case where stating nitrogen feed system and the volume control device controls the wafer vacuum reative cell work.
In some embodiments, nitrogen feed system distribution portion from the nitrogen for being supplied to each factory service equipment
Nitrogen does not increase the nitrogen amount in the nitrogen feed system to the nitrogen pipeline.
In some embodiments, the gas exhaust piping is vertically arranged, and includes lower layer region, media areas successively from the bottom to top
With high-rise region；The wafer vacuum reative cell and first pump housing are located at the high-rise region, and second pump housing is located at
The lower layer region.
In some embodiments, it is provided with heating tape outside the inlet end of the gas exhaust piping, in the heating
The outside of band is provided with explosion-proof blanket, and the installation position of the heating tape and the explosion-proof blanket is in first pump housing and the nitrogen
Between pipeline.
In some embodiments, further include air washer, the air washer is connect with second pump housing, and described second
Nitrogen in second mixed gas and second pump housing is pumped into the air washer into promoting the circulation of qi by the pump housing together
After body disinfection, it is discharged in air.
In some embodiments, the exhaust system is to be arranged in parallel multiple, and each exhaust system is with one
The nitrogen pipeline is connected with a wafer vacuum reative cell.
In some embodiments, when the gas exhaust piping is multistage pipeline structure, in the connection of each section of pipeline structure
Sealing ring is arranged in place, is arranged without explosion-proof blanket outside the sealing ring.
According to one embodiment of present invention, a kind of gas processing method is additionally provided, including：
Gas handling system as described above is provided；
It is put into wafer into the wafer vacuum reative cell and is continually fed into reaction gas, the reaction gas and the crystalline substance
Circle generates first mixed gas during being etched；
First pump housing continues first mixed gas in the wafer vacuum reative cell being pumped into the exhaust
Pipeline；
The nitrogen pipeline continues nitrogen being transported in the gas exhaust piping, with to the institute in first mixed gas
It states carbonyl sulfide and carries out first time dilution；Wherein, the nitrogen in the gas exhaust piping is transported to supply for the nitrogen feed system
It should be to being distributed in the nitrogen of each factory service equipment, and the nitrogen amount in the nitrogen feed system does not increase, it is described
First mixed gas produces the second mixed gas after first time dilutes；And
Second pump housing continues second mixed gas in the gas exhaust piping being pumped into inside it, and described
Second pump is discharged after diluting the carbonyl sulfide in second mixed gas again using nitrogen in second pump housing
Body.
In some embodiments, the nitrogen being transported in the gas exhaust piping is the nitrogen feed system described in
It is distributed in the nitrogen of second pump housing.
In some embodiments, the nitrogen supply (NS) situation in the nitrogen feed system is monitored by control unit, works as institute
When stating nitrogen feed system the supply of nitrogen appearance exception, described control unit controls the wafer vacuum reative cell and stops to described
Wafer performs etching, while described control unit control volume control device is closed, and stops the nitrogen pipeline to the exhaust
Supplying nitrogen in pipeline.
The embodiment of the present invention due to using the technology described above, has the following advantages：1, present system is supplied to nitrogen
Nitrogen in air pipe for diluting the first mixed gas is that nitrogen feed system provides, and the nitrogen is nitrogen feed system
Supplied to what is distributed in the nitrogen of each factory service equipment, do not increase the burden of nitrogen feed system additionally, ensures each factory
It is engaged in the case of equipment normal operation, not only saving the production cost of system while also improving the safety of system.2, originally
Invention system is passed through a small amount of nitrogen by nitrogen pipeline since nitrogen pipeline is arranged in gas exhaust piping inlet end into gas exhaust piping
To be diluted into the carbonyl sulfide concentration in gas exhaust piping, so as to avoid the carbonyl sulfide concentration in gas exhaust piping is entered
Excessively high generation spontaneous combustion or explosion, improve equipment and personnel safety.3, the oxygen of present system entered in gas exhaust piping
Nitric sulfid gas is diluted by nitrogen, therefore within the scope of safe concentration, not will produce explosion, therefore without in gas exhaust piping
Upper package explosion-proof blanket reduces the danger and cost of equipment maintenance of staff's working at height.4, control unit of the invention
Due to being electrically connected with wafer vacuum reative cell, volume control device and nitrogen feed system, system can be supplied in nitrogen
The nitrogen supply (NS) of system goes wrong and is, control unit volume control device and the linkage of wafer vacuum reative cell are stopped, and avoid
It is worked in nitrogen supply (NS) deficiency so that explosion or spontaneous combustion occur for the carbonyl sulfide excessive concentration entered in gas exhaust piping.
Above-mentioned general introduction is merely to illustrate that the purpose of book, it is not intended to be limited in any way.Except foregoing description
Schematical aspect, except embodiment and feature, by reference to attached drawing and the following detailed description, the present invention is further
Aspect, embodiment and feature, which will be, to be readily apparent that.
Description of the drawings
In the accompanying drawings, unless specified otherwise herein, otherwise run through the identical reference numeral of multiple attached drawings and indicate same or analogous
Component or element.What these attached drawings were not necessarily to scale.It should be understood that these attached drawings are depicted only according to the present invention
Some disclosed embodiments, and should not serve to limit the scope of the present invention.
Fig. 1 is the structure chart of the gas handling system of the embodiment of the present invention.
Fig. 2 is the structure chart of the gas handling system of another embodiment of the present invention.
Fig. 3 is the flow chart of the gas processing method of the embodiment of the present invention.
Drawing reference numeral explanation：
10- exhaust systems；First pump housings of 11-；Second pump housings of 12-；
13- gas exhaust pipings；14- nitrogen pipelines；20- wafer vacuum reative cells；
131- inlet ends；The outlet sides 132-；30- nitrogen feed systems；
40- control units；15- volume control devices；151- pressure gauges；
152- pressure regulator valves；153- flowmeters；41- signal pipings；
42- pressure controllers；50- crawl arms；60- loading zones；
70- transmitting devices；The heating tapes 133-；134- explosion-proof blankets；
80- air washers；135- pipeline structures；136- sealing rings；
154- flow valves.
Specific implementation mode
Hereinafter, certain exemplary embodiments are simply just described.As one skilled in the art will recognize that
Like that, without departing from the spirit or scope of the present invention, described embodiment can be changed by various different modes.
Therefore, attached drawing and description are considered essentially illustrative rather than restrictive.
In the description of the present invention, it is to be understood that, term "center", " longitudinal direction ", " transverse direction ", " length ", " width ",
" thickness ", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outside", " up time
The orientation or positional relationship of the instructions such as needle ", " counterclockwise ", " axial direction ", " radial direction ", " circumferential direction " be orientation based on ... shown in the drawings or
Position relationship is merely for convenience of description of the present invention and simplification of the description, and does not indicate or imply the indicated device or component must
There must be specific orientation, with specific azimuth configuration and operation, therefore be not considered as limiting the invention.
In addition, term " first ", " second " are used for description purposes only, it is not understood to indicate or imply relative importance
Or implicitly indicate the quantity of indicated technical characteristic.Define " first " as a result, the feature of " second " can be expressed or
Implicitly include one or more this feature.In the description of the present invention, the meaning of " plurality " is two or more,
Unless otherwise specifically defined.
In the present invention unless specifically defined or limited otherwise, term " installation ", " connected ", " connection ", " fixation " etc.
Term shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or integral；Can be that machinery connects
It connects, can also be electrical connection, can also be communication；It can be directly connected, can also indirectly connected through an intermediary, it can be with
It is connection or the interaction relationship of two components of two component internals.For the ordinary skill in the art, may be used
To understand the concrete meaning of above-mentioned term in the present invention as the case may be.
In the present invention unless specifically defined or limited otherwise, fisrt feature the "upper" of second feature or "lower"
It may include that the first and second features are in direct contact, can also not be to be in direct contact but pass through it including the first and second features
Between other characterisation contact.Moreover, fisrt feature second feature " on ", " side " and " above " include fisrt feature
Right over second feature and oblique upper, or it is merely representative of fisrt feature level height and is higher than second feature.Fisrt feature is
Two features " under ", " lower section " and " following " include fisrt feature right over second feature and oblique upper, or be merely representative of
One characteristic level height is less than second feature.
Following disclosure provides many different embodiments or example is used for realizing the different structure of the present invention.In order to
Simplify disclosure of the invention, hereinafter the component of specific examples and setting are described.Certainly, they are merely examples, and
And it is not intended to limit the present invention.In addition, the present invention can in different examples repeat reference numerals and/or reference letter,
This repetition is for purposes of simplicity and clarity, itself not indicate between discussed various embodiments and/or setting
Relationship.In addition, the present invention provides various specific techniques and material example, but those of ordinary skill in the art can be with
Recognize the application of other techniques and/or the use of other materials.
As shown in Figure 1, an embodiment of the present invention provides a kind of gas handling systems, including：
An at least exhaust system 10 has first pump housing 11, second pump housing 12, gas exhaust piping 13.First pump housing 11 and one
Wafer vacuum reative cell 20 connects.The inlet end 131 of gas exhaust piping 13 is connect with first pump housing 11, and first pump housing 11 is true by wafer
The first mixed gas in empty reative cell 20 is pumped into gas exhaust piping 13, the outlet side 132 of gas exhaust piping 13 and second pump housing 12
Connection.Wherein, the first mixed gas includes carbonyl sulfide, it should be noted that further include other gases in the first mixed gas,
Such as oxygen.
Nitrogen feed system 30, for providing nitrogen to each factory service equipment.
Nitrogen pipeline 14 is connect with the inlet end 131 of nitrogen feed system 30 and gas exhaust piping 13, and nitrogen pipeline 14 is used
It is transported at the inlet end 131 of gas exhaust piping 13 in the nitrogen for supplying nitrogen feed system 30, to dilute the first mixed gas
In carbonyl sulfide concentration to explosion ratio lower limit below.It should be noted that the explosion ratio range of carbonyl sulfide is
11.9%-29%.
Wherein, it is that nitrogen feed system 30 is supplied in the nitrogen of each factory service equipment to be supplied to the nitrogen in nitrogen pipeline 14
It is distributed.Second pump housing 12 is used to the second mixed gas in gas exhaust piping 13 being discharged, and the second mixed gas includes nitrogen
The nitrogen conveyed in air pipe 14 and the first mixed gas.
Nitrogen feed system 30 from be supplied in the nitrogen of each factory service equipment distribution portion nitrogen to nitrogen pipeline 14, non-volume
The outer nitrogen amount increased in nitrogen feed system 30.It can be appreciated that nitrogen feed system 30 supply nitrogen total amount not because
Extra Supply nitrogen changes to nitrogen pipeline 14.Therefore, because nitrogen, which is nitrogen feed system 30, is supplied to each factory service equipment
Nitrogen in distributed, do not increase the burden of nitrogen feed system 30 additionally, ensureing each factory service equipment normal operation
In the case of, it not only saves the production cost of system while also improving the safety of system.
In one embodiment, factory service equipment can include second pump housing 12, and nitrogen feed system 30 is second pump housing 12
Carbonyl sulfide in second mixed gas is diluted and second pump housing is discharged by the supply of nitrogen, the nitrogen in second pump housing 12 again
12.Preferably, it is supplied to the nitrogen in nitrogen pipeline 14 and is supplied to institute in the nitrogen of second pump housing 12 for nitrogen feed system 30
It distributes.And nitrogen feed system 30 is supplied to the nitrogen amount of nitrogen pipeline 14 to be less than the nitrogen for being supplied to second pump housing 12
Amount.
For example, in a specific embodiment, second pump housing 12 meets the nitrogen amount maximum value of running requirements specification
For 40SLM (mark condition state liter/min), when the nitrogen amount that nitrogen pipeline 14 conveys is 1~2SLM, second pump housing 12 is distributed to
Nitrogen amount after nitrogen pipeline 14 is 30~38SLM.It is nitrogen pipeline and then while ensureing the second 12 operating condition of the pump housing
14 provide nitrogen, and do not increase the burden of nitrogen feed system 30.
In one embodiment, gas handling system further includes volume control device 15 and control unit 40.Flow control
Device 15 is arranged in nitrogen pipeline 14, the flow for controlling nitrogen in nitrogen pipeline 14.Control unit 40 and flow control
Device 15 and nitrogen feed system 30 are electrically connected, and control unit 40 is used to monitor the nitrogen supply (NS) feelings of nitrogen feed system 30
Condition, and the nitrogen delivery situation of volume control device 15 is monitored and controlled.Control unit 40 also with wafer vacuum reative cell 20
Electrical connection, according to 20 work of control wafer vacuum reative cell the case where the nitrogen feed system 30 of monitoring and volume control device 15
Make.Realize the linkage between wafer vacuum reative cell 20, volume control device 15 and nitrogen feed system 30.Gas exhaust piping 13
Inside is vacuum environment.
It should be noted that the mixed gas in wafer vacuum reative cell 20 is mainly used for in wafer vacuum reative cell 20
Wafer handled.Wafer vacuum reative cell 20 can carry out a variety of processing to wafer, not according to processing step and technique
Together, the first mixed gas being passed through in wafer vacuum reative cell 20 also differs.When mixed gas includes carbonyl sulfide and oxygen
When, wafer vacuum reative cell 20 is mainly used for being etched wafer.Nitrogen pipeline 14 in the present embodiment is at least in crystalline substance
Circle vacuum reaction chamber 20 works when being etched to wafer, i.e. carbonyl sulfide concentration in dilute gas mixture body.Preferably,
Also it can only be diluted by 14 supplying nitrogen of nitrogen pipeline in the higher several steps of carbonyl sulfide concentration in etching treatment procedure
Carbonyl sulfide in gas exhaust piping 13 prevents spontaneous combustion or explosion.
In order to preferably control the nitrogen delivery situation with detection nitrogen pipeline 14, volume control device 15 includes that setting exists
Pressure gauge 151, pressure regulator valve 152, flowmeter 153 in nitrogen pipeline 14 and flow valve 154.Control unit 40 and pressure gauge 151,
Pressure regulator valve 152, flowmeter 153 and flow valve 154 are electrically connected, by monitoring the numerical value of pressure gauge 151 and flowmeter 153, control
The aperture of pressure regulator valve 152 and flow valve 154 processed is to adjust the nitrogen amount conveyed in nitrogen pipeline 14.Wherein, pressure gauge 151 can
14 internal pressure situation of nitrogen pipeline is detected, flowmeter 153 can detect the flow via the nitrogen after pressure regulator valve 152.
In one embodiment, control unit 40 includes monitoring pipeline 41 and pressure controller 42, monitors pipeline 41 and nitrogen
Air pipe 14 is arranged in parallel and is connect with nitrogen feed system 30, and pressure controller 42 monitors the nitrogen in pipeline 41 by monitoring
Amount, and then monitor the gas supply situation of nitrogen feed system 30.
In a preferred embodiment, control unit 40 can also respectively with crawl arm 50, loading zone 60, transmitting device 70
Electrical connection.Wherein crawl arm 50 is for grabbing wafer in loading zone 60, and loading zone 60 is for storing wafer and by wafer
On distribution to transmitting device 70, transmitting device 70 is for wafer to be transported in wafer vacuum reative cell 20.When control unit 40
It, being capable of coordinated signals crawl arm 50, loading zone 60, transmitting device when detecting the nitrogen supply (NS) exception in nitrogen feed system 30
70, wafer vacuum reative cell 20 and nitrogen feed system 30 are simultaneously stopped work.
First pump housing 11 is from the carbonyl sulfide in the first mixed gas extracted out in wafer vacuum reative cell 20 in order to prevent
The danger such as explosion occur before by the nitrogen dilution in nitrogen pipeline 14, it can be outside the inlet end 131 of gas exhaust piping 13
It is provided with heating tape 133, the outside of heating tape 133 is provided with explosion-proof blanket 134, the setting position of heating tape 133 and explosion-proof blanket 134
It sets between first pump housing 11 and nitrogen pipeline 14.Explosion-proof blanket 134 is mainly used for preventing from having just enter into the oxygen in gas exhaust piping 13
Nitric sulfid excessive concentration is exploded.Heating tape 133 is mainly used for heating the inlet end 131 of gas exhaust piping 13, prevents
First pump housing 11 extraction Mixed Gas Condensation and be attached on the inner wall of gas exhaust piping 13.
In one embodiment, as shown in Figure 1, further including air washer 80, air washer 80 is connect with second pump housing 12,
The second mixed gas in gas exhaust piping 13 and the nitrogen in second pump housing 12 are pumped into net gas and filled by second pump housing 12 together
In setting 80, air washer 80 removes the evil to each gas, purifies to be discharged in air after safe and harmless gas.It needs to illustrate
Be, air washer 80 arbitrary equipment in the prior art can be used, it can be achieved that above-mentioned purification gas function.
For the ease of the extraction and conveying of the mixed gas in wafer vacuum reative cell 20, gas exhaust piping 13 can be set vertically
It sets.The upper position for setting each attached drawing in Figure of description is top, and the lower orientation of each attached drawing is bottom.Gas exhaust piping 13
Include lower layer region, media areas and high-rise region successively from the bottom to top.Wafer vacuum reative cell 20 and first pump housing 11 are located at
High-rise region, second pump housing 12 are located at lower layer region.The top one end of high rise zone domain (be located at) of gas exhaust piping 13 include into
The bottom (one end for being located at lower layer region) at gas end 131, gas exhaust piping 13 includes outlet side 132.Due to being located at high-rise region
The inlet end 131 of gas exhaust piping 13 be passed through the nitrogen of the conveying of nitrogen pipeline 14, therefore the carbonyl sulfide in gas exhaust piping 13
Concentration is diluted to explosion ratio lower limit hereinafter, therefore gas exhaust piping 13 will not explode, without the height in gas exhaust piping 13
Explosion-proof blanket is installed in layer region and media areas, therefore staff is not necessarily to carry out working at height in high-rise region and media areas,
The personal safety of staff is reduced while avoiding equipment from causing danger.
As shown in Fig. 2, when exhaust system 10 is multiple, each exhaust system 10 is arranged in parallel, and each exhaust system 10
Nitrogen pipeline 14 connect with same nitrogen feed system 30, realize simultaneously to the mixing in multiple wafer vacuum reative cells 20
Gas is carried out at the same time carbonyl sulfide dilution, improves the processing efficiency and gas dilution efficiency of wafer.
As shown in Figure 1, when gas exhaust piping is long, when gas exhaust piping 13 is formed by the combination of multistage pipeline structure 135, each
Sealing ring 136 is arranged in the junction of section pipeline structure 135, and sealing ring 136 can prevent each section of generation gas of pipeline structure 135 from letting out
Leakage.Simultaneously as the carbonyl sulfide gas in gas exhaust piping 13 is diluted by the nitrogen in nitrogen pipeline 14, therefore do not need
In the junction of each section of pipeline structure 135, explosion-proof blanket 134 is set.
In a preferred embodiment, sealing ring 136 uses perfluor ring.
Illustrate the technique effect of present system below by a specific embodiment.
When wafer vacuum reative cell 20 is etched wafer, it is required to react to wafer vacuum in step X, Y, Z
It is passed through carbonyl sulfide 0.028SLM, oxygen 0.175SLM in room 20, and wafer is etched.First pump housing 11 is by wafer
Carbonyl sulfide and oxygen in vacuum reaction chamber 20 are pumped into gas exhaust piping 13, first pump housing 11 in order to avoid extraction gas
It is attached to first pump housing, 11 inner wall, it is therefore desirable to which the nitrogen for being passed through 0.01SLM provides purging power.At this point, having just enter into exhaust
Carbonyl sulfide a concentration of 13.15% (as shown in table 1) in pipeline 13.
Table 1
After the nitrogen of 1-2SLM is passed through gas exhaust piping 13 by nitrogen pipeline 14, the carbonyl sulfide content in gas exhaust piping 13
It is diluted as 2.31% (as shown in table 2) so that carbonyl sulfide gas concentration is in safe range, without dense in spontaneous combustion or explosion
It spends in range.
Table 2
Then second pump housing 12 continues by the gas extraction in gas exhaust piping 13, in order to ensure extraction flow and prevent from mixing
It closes gas and adheres to the second pump housing inner wall, need the nitrogen that 30-38SLM is added, carbonyl sulfide is diluted further to concentration at this time
Only 0.07%.
Therefore, present system dilutes carbonyl sulfide by nitrogen twice so that in the entire system in gas exhaust piping 13
Spontaneous combustion or explosion will not occur for the carbonyl sulfide gas in any position, significantly improve device security.
As shown in figure 3, the embodiment of the present invention additionally provides a kind of gas concentration dilution process, it is based on above-mentioned any embodiment
System, method includes the following steps：
S100：Be put into wafer into wafer vacuum reative cell 20 and be continually fed into reaction gas, reaction gas and wafer into
The first mixed gas is generated in row etching process.
S200：First pump housing 11 continues the first mixed gas in wafer vacuum reative cell 20 being pumped into gas exhaust piping 13.
S300：Nitrogen pipeline 14 continues nitrogen being transported in gas exhaust piping 13, with to the oxygen sulphur in the first mixed gas
Change carbon and carries out first time dilution.Wherein, the nitrogen being transported in gas exhaust piping 13 is that nitrogen feed system 30 is supplied to each factory service
It is distributed in the nitrogen of equipment.
S400：Second pump housing 12 continues the second mixed gas in gas exhaust piping 13 being pumped into inside it, and passes through second
Second pump housing 12 is discharged in nitrogen in the pump housing 12 after diluting the carbonyl sulfide in mixed gas again.
In one embodiment, the nitrogen being transported in gas exhaust piping 13 is that nitrogen feed system 30 is supplied to second pump housing
It is distributed in 12 nitrogen.
In one embodiment, control unit 40 monitors the nitrogen supply (NS) situation in nitrogen feed system 30, when nitrogen supplies
When occurring abnormal to 30 the supply of nitrogen of system, control unit 40 controls wafer vacuum reative cell 20 and stops performing etching wafer,
Control unit 20 controls volume control device 15 and closes simultaneously, stops the supplying nitrogen into gas exhaust piping 13 of nitrogen pipeline 14.
The above description is merely a specific embodiment, but scope of protection of the present invention is not limited thereto, any
Those familiar with the art in the technical scope disclosed by the present invention, can readily occur in its various change or replacement,
These should be covered by the protection scope of the present invention.Therefore, protection scope of the present invention should be with the guarantor of the claim
It protects subject to range.
Claims (15)
1. a kind of gas handling system, which is characterized in that including：
An at least exhaust system has first pump housing, second pump housing and gas exhaust piping；First pump housing and a wafer vacuum are anti-
Room is answered to connect, the inlet end of the gas exhaust piping is connect with first pump housing, and first pump housing is anti-by the wafer vacuum
The first mixed gas in room is answered to be pumped into the gas exhaust piping；The outlet side of the gas exhaust piping connects with second pump housing
It connects；First mixed gas includes carbonyl sulfide；
Nitrogen feed system is used for each factory service equipment the supply of nitrogen；And
Nitrogen pipeline is connect, the nitrogen pipeline with the inlet end of the nitrogen feed system and the gas exhaust piping
For the nitrogen supplied in the nitrogen feed system to be transported at the inlet end of the gas exhaust piping, described in dilution
Below the carbonyl sulfide concentration to explosion ratio lower limit in first mixed gas；
Wherein, the nitrogen being supplied in the nitrogen pipeline is to be supplied to each factory service equipment from the nitrogen feed system
It is distributed in nitrogen；First mixed gas produces the second mixed gas, second mixing after nitrogen dilution
Gas is transported to second pump housing via the gas exhaust piping, and second pump housing is used for second in the gas exhaust piping
Mixed gas is discharged.
2. gas handling system as described in claim 1, which is characterized in that the factory service equipment includes second pump housing,
The nitrogen feed system is described second pump housing the supply of nitrogen, and second pump housing using nitrogen by described second for being mixed
The carbonyl sulfide in gas dilutes and second pump housing is discharged again；
Wherein, the nitrogen being supplied in the nitrogen pipeline is the nitrogen that second pump housing is supplied to from the nitrogen feed system
It is distributed in gas, the nitrogen feed system is supplied to the nitrogen amount of the nitrogen pipeline to be less than and is supplied to second pump housing
Nitrogen amount.
3. gas handling system as described in claim 1, which is characterized in that further include：
Volume control device is arranged in the nitrogen pipeline, the flow for controlling nitrogen in the nitrogen pipeline；
Control unit is electrically connected with the volume control device and the nitrogen feed system, and described control unit is for supervising
Control volume control device described in the nitrogen feed system and monitoring and controlling.
4. gas handling system as claimed in claim 3, which is characterized in that the volume control device includes being arranged described
Pressure gauge, pressure regulator valve, flowmeter in nitrogen pipeline and flow valve；Described control unit and the pressure gauge, the pressure regulator valve,
The flowmeter and flow valve electrical connection, described control unit are opened by monitoring the pressure gauge control pressure regulator valve
Degree, and the flow valve opening is controlled by monitoring the flowmeter, to adjust the nitrogen amount conveyed in the nitrogen pipeline.
5. gas handling system as claimed in claim 3, which is characterized in that described control unit includes monitoring pipeline and pressure
Controller, the monitoring pipeline are arranged in parallel with the nitrogen pipeline and are connect with the nitrogen feed system, the pressure control
Device processed monitors the gas supply situation of the nitrogen feed system by monitoring the nitrogen amount in the monitoring pipeline.
6. gas handling system as claimed in claim 5, which is characterized in that described control unit is also anti-with the wafer vacuum
Room is answered to be electrically connected, it is true to control the wafer according to the case where nitrogen feed system of monitoring and volume control device
Empty reative cell work.
7. gas handling system as described in claim 1, which is characterized in that the nitrogen feed system is each described from being supplied to
Distribution portion nitrogen does not increase the nitrogen amount in the nitrogen feed system to the nitrogen pipeline in the nitrogen of factory service equipment.
8. gas handling system as described in claim 1, which is characterized in that the gas exhaust piping is vertically arranged, from the bottom to top
Include lower layer region, media areas and high-rise region successively；The wafer vacuum reative cell and first pump housing are located at described
High-rise region, second pump housing are located at the lower layer region.
9. gas handling system as described in claim 1, which is characterized in that outside the inlet end of the gas exhaust piping
It is provided with heating tape, the outside of the heating tape is provided with explosion-proof blanket, the installation position of the heating tape and the explosion-proof blanket
Between first pump housing and the nitrogen pipeline.
10. gas handling system as described in claim 1, which is characterized in that further include air washer, the air washer with
Second pump housing connection, second pump housing pump the nitrogen in second mixed gas and second pump housing together
It is sent to after carrying out gas disinfection in the air washer, is discharged in air.
11. gas handling system as described in claim 1, which is characterized in that the exhaust system be arranged in parallel it is multiple,
And each exhaust system is connect with a nitrogen pipeline and a wafer vacuum reative cell.
12. gas handling system as described in claim 1, which is characterized in that when the gas exhaust piping is multistage pipeline structure,
Sealing ring is set in the junction of each section of pipeline structure, is arranged without explosion-proof blanket outside the sealing ring.
13. a kind of gas processing method, which is characterized in that including：
Gas handling system as described in claim 1 is provided；
Be put into wafer into the wafer vacuum reative cell and be continually fed into reaction gas, the reaction gas and the wafer into
First mixed gas is generated in row etching process；
First pump housing continues first mixed gas in the wafer vacuum reative cell being pumped into the gas exhaust piping；
The nitrogen pipeline continues nitrogen being transported in the gas exhaust piping, with to the oxygen in first mixed gas
Nitric sulfid carries out first time dilution；Wherein, the nitrogen being transported in the gas exhaust piping is that the nitrogen feed system is supplied to
It is distributed in the nitrogen of each factory service equipment, and the nitrogen amount in the nitrogen feed system does not increase, described first
Mixed gas produces the second mixed gas after first time dilutes；And
Second pump housing continues second mixed gas in the gas exhaust piping being pumped into inside it, and described second
Second pump housing is discharged after diluting the carbonyl sulfide in second mixed gas again using nitrogen in the pump housing.
14. gas processing method as claimed in claim 13, which is characterized in that the nitrogen being transported in the gas exhaust piping is
The nitrogen feed system is supplied to being distributed in the nitrogen of second pump housing.
15. gas processing method as claimed in claim 13, which is characterized in that monitor the nitrogen by control unit and supply
Nitrogen supply (NS) situation in system, when described nitrogen feed system the supply of nitrogen occurs abnormal, described control unit controls institute
It states the stopping of wafer vacuum reative cell to perform etching the wafer, while described control unit control volume control device is closed,
Stop nitrogen pipeline supplying nitrogen into the gas exhaust piping.
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| CN201810366719.5A CN108591826A (en) | 2018-04-23 | 2018-04-23 | Gas handling system and processing method |
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| CN110440132A (en) * | 2019-09-09 | 2019-11-12 | 湖南航天机电设备与特种材料研究所 | The used group sealing unit inflated with nitrogen system and method for one kind |
| CN111174096A (en) * | 2020-01-17 | 2020-05-19 | 广东宏工物料自动化系统有限公司 | Conveying system for asphalt smoke |
| CN111271607A (en) * | 2020-01-19 | 2020-06-12 | 北京北方华创微电子装备有限公司 | Overvoltage protection device and method for semiconductor equipment and abnormality detection method |
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Effective date of registration: 20181008 Address after: 230000 room 630, Hai Heng mansion 6, Cui Wei Road, Hefei economic and Technological Development Zone, Anhui Applicant after: CHANGXIN MEMORY TECHNOLOGIES, Inc. Address before: 230000 room 526, Hai Heng mansion 6, Cui Wei Road, Hefei economic and Technological Development Zone, Anhui Applicant before: INNOTRON MEMORY CO.,Ltd. |