JPH0647268A - Operating method of vacuum treating device - Google Patents
Operating method of vacuum treating deviceInfo
- Publication number
- JPH0647268A JPH0647268A JP4200153A JP20015392A JPH0647268A JP H0647268 A JPH0647268 A JP H0647268A JP 4200153 A JP4200153 A JP 4200153A JP 20015392 A JP20015392 A JP 20015392A JP H0647268 A JPH0647268 A JP H0647268A
- Authority
- JP
- Japan
- Prior art keywords
- vacuum
- gas
- dry
- vacuum pump
- detoxifying
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000011017 operating method Methods 0.000 title abstract description 5
- 239000007789 gas Substances 0.000 claims abstract description 47
- 238000000034 method Methods 0.000 claims abstract description 19
- 230000002159 abnormal effect Effects 0.000 claims abstract description 8
- 239000011261 inert gas Substances 0.000 claims abstract description 7
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 238000012545 processing Methods 0.000 claims description 11
- 238000010790 dilution Methods 0.000 claims description 8
- 239000012895 dilution Substances 0.000 claims description 8
- 238000004891 communication Methods 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 8
- 238000007865 diluting Methods 0.000 abstract 1
- 238000009423 ventilation Methods 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 4
- 238000001784 detoxification Methods 0.000 description 4
- 238000004880 explosion Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000012433 hydrogen halide Substances 0.000 description 1
- 229910000039 hydrogen halide Inorganic materials 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000011866 long-term treatment Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、真空処理装置の運転方
法に係り、特に、ドライエッチング、ＣＶＤ（化学蒸
着）、イオン注入などの工程に代表される半導体や液晶
など精密電子部品の製造装置（以下、真空製造装置とい
う）の排気処理を含めた真空処理装置の運転方法に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of operating a vacuum processing apparatus, and more particularly, to an apparatus for manufacturing precision electronic parts such as semiconductors and liquid crystals represented by processes such as dry etching, CVD (chemical vapor deposition) and ion implantation. The present invention relates to a method of operating a vacuum processing apparatus including exhaust processing (hereinafter referred to as a vacuum manufacturing apparatus).
【０００２】[0002]
【従来の技術】半導体製造プロセスの排気系には、ウエ
ハープロセスに供給された未反応ガスや、プロセスであ
らたに生成した数多くのガス成分が含有されている。こ
れらの中には酸素との親和力がきわめて強くて酸素が共
存すると自然発火的に燃焼するガス（ＳｉＨ4 など）や
水分と反応して腐食性のはげしいハロゲン化水素を発生
するガス（ＳｉＦ4 ，Ｃｌ2 など）が含まれている。こ
のため、排気系に大気が混入すると、大気中の酸素や水
分により発火・爆発、構成材料の腐食を引き起す。2. Description of the Related Art An exhaust system of a semiconductor manufacturing process contains unreacted gas supplied to a wafer process and many gas components newly generated in the process. Among these, there is a very strong affinity with oxygen and a gas that spontaneously combusts when oxygen coexists (such as SiH 4 ) or a gas that reacts with moisture to generate corrosive hydrogen halide (SiF 4 , Cl 2 etc.) is included. Therefore, when the atmosphere is mixed in the exhaust system, oxygen and moisture in the atmosphere cause ignition / explosion and corrosion of constituent materials.
【０００３】これ迄、これらのガスを取扱う工程では、
定期点検保修時や停電時に装置が停止したときに細心の
注意を払って系内のガスをＮ2 などの不活性ガスで置換
しているまた、万一の事態が発生しないように装置及び
配管・弁の材料に耐久性にすぐれ信頼性の高いものを採
用したり、排ガスを多量の不活性ガスで常時希釈して排
気するなどの方法がとられている。又、真空ポンプ乾式
除害装置をボックス内に収納し、工場内の排気ダクトに
接続して換気することもある。Until now, in the process of handling these gases,
The gas in the system is replaced with an inert gas such as N 2 with great care when the equipment stops during regular inspection and maintenance or during a power outage. Also, equipment and piping are provided so that an unexpected situation does not occur. -Valve materials such as highly durable and highly reliable ones are adopted, and exhaust gas is always diluted with a large amount of inert gas and exhausted. In addition, a vacuum pump dry abatement device may be housed in a box and connected to an exhaust duct in a factory for ventilation.
【０００４】[0004]
【発明が解決しようとする課題】従来の対処では、危険
が予知できる停電時、定期点検保修時には有効である
が、日常の操作中における異常事態の予知あるいは早期
発見は困難であり、特にこれらの有害ガスを長期間にわ
たって処理したことにより、発火・爆発を誘起する恐れ
のある乾式除害装置の除害カラムに対しては万全の対応
ではなかった。本発明は、上記の日常運転時の事故を予
知して、未然に防止することのできる真空処理装置の運
転方法を提供することを課題とする。The conventional measures are effective at the time of a power outage in which danger can be predicted, and at the time of regular inspection and maintenance, but it is difficult to predict or detect an abnormal situation during daily operation. It was not a perfect countermeasure for the detoxification column of the dry detoxification device, which may cause ignition or explosion due to the long-term treatment of harmful gas. It is an object of the present invention to provide a method of operating a vacuum processing apparatus, which can predict the above-mentioned accidents during daily operation and prevent them from occurring.
【０００５】[0005]
【課題を解決するための手段】上記課題を解決するため
に、本発明では、真空製造装置と該装置に連通して設け
た真空ポンプと該真空ポンプで吸引されるガスを処理す
る乾式除害装置からなる真空処理装置の運転方法におい
て、前記真空ポンプ出口部、乾式除害装置入口部又は出
口部、及び乾式除害装置の除害カラム内部のうちのいず
れか１か所以上に温度センサを配備し、該温度センサの
どれかが温度異常上昇を検知すると、前記真空製造装置
に流入するプロセスガスを停止させ、及び／又は、希釈
用不活性ガスを吸引ガス中に大量に流入させることとし
たものである。In order to solve the above problems, according to the present invention, a vacuum manufacturing apparatus, a vacuum pump provided in communication with the apparatus, and a dry type abatement for treating gas sucked by the vacuum pump. In a method of operating a vacuum processing apparatus comprising a device, a temperature sensor is provided at any one or more of the vacuum pump outlet, the dry abatement device inlet or outlet, and the inside of the abatement column of the dry abatement device. When any of the temperature sensors is installed and an abnormal temperature rise is detected, the process gas flowing into the vacuum manufacturing apparatus is stopped and / or a large amount of the inert gas for dilution is caused to flow into the suction gas. It was done.
【０００６】[0006]
【作用】正常な運転においては、プロセスガス流量や半
導体製造装置の操作条件は非常に厳密にコントロールさ
れているので、真空ポンプで排気されるガスの組成・各
成分の濃度・ガス流量の変動は少い。したがって、排気
系の各ポイントにおける温度も安定しており、たとえ
ば、標準的なドライエッチング工程の排気系では排気ガ
ス量１０リットル／ｍｉｎ程度で、真空ポンプ出口直後
１５０〜２００℃、ＳＵＳフレキシブルダクト１〜２ｍ
後で３０〜４０℃、乾式除害カラム入口部ではほぼ室温
に冷却される。[Function] In normal operation, the process gas flow rate and the operating conditions of the semiconductor manufacturing equipment are controlled very strictly, so the composition of the gas exhausted by the vacuum pump, the concentration of each component, and the fluctuation of the gas flow rate are Little. Therefore, the temperature at each point of the exhaust system is also stable. For example, in the exhaust system of a standard dry etching process, the exhaust gas amount is about 10 liters / min, the temperature is 150 to 200 ° C. immediately after the vacuum pump outlet, and the SUS flexible duct 1 ~ 2m
After that, the temperature is cooled to 30 to 40 ° C. and to the room temperature at the inlet of the dry detoxification column.
【０００７】除害剤の入ったカラム内の反応帯では常温
＋数℃〜数１０℃、除害装置出口では室温〜室温＋数℃
程度になる。装置的なトラブルにより通常希釈用Ｎ2 ガ
ス量が低下すると真空ポンプ出口部の排気温度が上昇す
る。また、排気中のガス成分濃度が上昇するのでカラム
内の反応帯の温度も上昇することになる。さらにカラム
内のガス流入部には反応性に富んだガス成分が高濃度に
吸着されており、大気が混入した排気ガスと接触すると
加水分解反応により発熱し、発火・燃焼の引き金になる
恐れがある。たとえば、エッチング系ガス成分を１リッ
トル当り１００〜２００ｇ吸着した活性炭系除害剤に空
気を通すと、約１０数℃〜数１０℃の温度上昇が認めら
れた。At the reaction zone in the column containing the detoxifying agent, room temperature to several tens of degrees Celsius to several tens of degrees Celsius, and at the exit of the detoxifying apparatus, room temperature to room temperature to several degrees Celsius
It will be about. When the amount of the N 2 gas for dilution usually decreases due to a mechanical problem, the exhaust temperature at the outlet of the vacuum pump rises. Moreover, since the concentration of the gas component in the exhaust gas increases, the temperature of the reaction zone in the column also increases. Furthermore, a highly reactive gas component is adsorbed at a high concentration in the gas inflow part of the column, and if it contacts exhaust gas mixed with the atmosphere, it will generate heat due to a hydrolysis reaction and may trigger ignition or combustion. is there. For example, when air was passed through an activated carbon type detoxifying agent that adsorbed 100 to 200 g of an etching type gas component per liter, a temperature increase of about 10 to several tens of degrees C was observed.
【０００８】このように、各部の温度の異常上昇をセン
サで検知し、大気の混入を含む異常事態を予知するの
は、きわめて有効な手段である。温度センサの異常出力
信号により、プロセスガスの緊急遮断、不活性ガスの多
量導入を行う。不活性ガス導入量は一律に規定できない
が、配管の接続部がはずれるなどの突発的な事故を除く
と腐食孔からの大気混入や、一時的な操作ミスに起因す
ることが多いことから、１００リットル／ｍｉｎ程度で
充分である。こうすることにより、除害カラム内の発熱
を未然に防止して、発火、爆発等の事故を予防すること
ができる。As described above, it is a very effective means to detect an abnormal rise in the temperature of each part by the sensor and predict an abnormal situation including the mixture of the atmosphere. The abnormal output signal of the temperature sensor is used to shut off the process gas urgently and to introduce a large amount of inert gas. Although the amount of inert gas introduced cannot be specified uniformly, it is often caused by atmospheric mixture from the corrosion holes or temporary operation mistakes, except for sudden accidents such as disconnection of pipe connections. About l / min is sufficient. By doing so, it is possible to prevent heat generation in the detoxification column and prevent accidents such as ignition and explosion.
【０００９】[0009]
【実施例】以下、本発明を図面を用いて具体的に説明す
るが、本発明はこれに限定されるものではない。 実施例１ 図１は、本発明の運転方法に用いる真空処理装置の概略
を示す系統図である。図において、半導体製造装置１は
真空ポンプ２によって真空が保持され、プロセスガスが
１６から流入されている。真空ポンプ２では排気ガスが
６から吸引され、通常希釈ライン１４からのＮ2 ガスに
よって希釈されて、排気ガスライン７から排出される。
そして、排気ガスライン７からの排気ガスは、乾式除害
装置３に流入して、除害剤が充填されたカラム４内で有
害ガスを除去して排気ガスライン８から排気ダクトに排
出される。乾式除害装置３内には、充填カラム４をバイ
パスするバイパス弁５を有するバイパス通路を設けて、
排気ガスライン７からの排気ガスを直接排気ガスライン
８に排出させることができるようにしてもよい。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be specifically described below with reference to the drawings, but the present invention is not limited thereto. Example 1 FIG. 1 is a system diagram showing an outline of a vacuum processing apparatus used in the operating method of the present invention. In the figure, the semiconductor manufacturing apparatus 1 is maintained in vacuum by a vacuum pump 2, and process gas is introduced from 16. In the vacuum pump 2, the exhaust gas is sucked from 6, is diluted with the N 2 gas from the normal dilution line 14, and is discharged from the exhaust gas line 7.
Then, the exhaust gas from the exhaust gas line 7 flows into the dry type abatement device 3, the harmful gas is removed in the column 4 filled with the abatement agent, and the exhaust gas is exhausted from the exhaust gas line 8 to the exhaust duct. . A bypass passage having a bypass valve 5 for bypassing the packed column 4 is provided in the dry abatement device 3,
The exhaust gas from the exhaust gas line 7 may be directly discharged to the exhaust gas line 8.
【００１０】上記のような半導体製造装置を含む真空処
理装置において、本発明では、温度センサ１２を、真空
ポンプ２の出口部１２−１、乾式除害装置３の入口部１
２−２、充填カラム４内１２−３及び除害装置３の出口
部１２−４の４か所に設けてあり、これらの温度センサ
１２の信号を温度監視ボックス１７で受けて、半導体製
造装置１内に設けたコントロールボックス１３に送る。
送られた信号のいずれかが温度の異常上昇を示した場合
は、コントロールボックス１３の指令により、プロセス
ガス流入ライン１６に設けた自動弁を閉止し、また、Ｎ
2 ガスの希釈ライン非常時用の自動弁１５を開いて、希
釈ガスを真空ポンプ２に多量に流すように操作する。In the vacuum processing apparatus including the semiconductor manufacturing apparatus as described above, in the present invention, the temperature sensor 12 is connected to the outlet section 12-1 of the vacuum pump 2 and the inlet section 1 of the dry type abatement apparatus 3.
2-2, the inside 12-3 of the packed column 4 and the outlet 12-4 of the abatement device 3 are provided at four locations, and the signals of these temperature sensors 12 are received by the temperature monitoring box 17, and the semiconductor manufacturing apparatus is operated. It is sent to the control box 13 provided in 1.
If any of the signals sent indicates an abnormal rise in temperature, the control box 13 issues a command to close the automatic valve provided in the process gas inflow line 16, and
2 Gas dilution line The automatic valve 15 for emergencies is opened to operate so that a large amount of dilution gas is supplied to the vacuum pump 2.
【００１１】なお、上記図１において、９は真空ポンプ
ボックスの換気ダクトであり、１０は除害装置ボックス
の換気ダクトであり、１１は集合主ダクトである。ま
た、上記においては、温度センサは４つ設置したもので
説明したが、温度センサはこれら４つのうちのいずれか
１つ又は２つ以上を組合せて設けてもよい。In FIG. 1, 9 is a ventilation duct of the vacuum pump box, 10 is a ventilation duct of the abatement device box, and 11 is a main collecting duct. Further, in the above description, four temperature sensors are provided, but the temperature sensor may be provided with any one of these four or a combination of two or more.
【００１２】[0012]
【発明の効果】本発明によれば、排気系各ポイントの温
度を適切に管理することにより、大気の混入などの異常
を早期に検知し、発火・爆発などの危険を防止すること
ができる。According to the present invention, by properly controlling the temperature of each point in the exhaust system, it is possible to detect abnormalities such as the mixture of the atmosphere at an early stage and prevent the danger of ignition and explosion.
【図１】本発明の運転方法に用いる真空処理装置の概略
系統図。FIG. 1 is a schematic system diagram of a vacuum processing apparatus used in an operating method of the present invention.
１：半導体製造装置 ２：真空ポンプ ３：乾式除害装置 ４：除害剤充填カラム ５：バイパス弁 ６、７、８：排ガス排気ライン ９：真空ポンプボックスの換気ダクト １０：除害装置ボックスの換気ダクト １１：集合主ダクト １２：温度センサ １３：コントロールボックス １４：Ｎ2 ガス希釈ライン １５：Ｎ2 ガス非常時希釈ラインの自動弁 １６：プロセスガス流入ライン １７：温度監視ボックス1: Semiconductor manufacturing equipment 2: Vacuum pump 3: Dry abatement device 4: Detoxifying agent-filled column 5: Bypass valve 6, 7, 8: Exhaust gas exhaust line 9: Ventilation duct of vacuum pump box 10: Abatement device box Ventilation duct 11: Collecting main duct 12: Temperature sensor 13: Control box 14: N 2 gas dilution line 15: N 2 gas emergency dilution line automatic valve 16: Process gas inflow line 17: Temperature monitoring box
フロントページの続き (72)発明者 村上 生吾 東京都大田区羽田旭町11番１号 株式会社 荏原製作所内 (72)発明者 森 洋一 東京都港区港南１丁目６番27号 荏原イン フィルコ株式会社内 (72)発明者 伊藤 晴子 神奈川県藤沢市本藤沢４丁目２番１号 株 式会社荏原総合研究所内Front page continuation (72) Inventor Seigo Murakami 11-1 Haneda-Asahi-cho, Ota-ku, Tokyo Inside the EBARA CORPORATION (72) Inventor Yoichi Mori 1-6-27 Konan, Minato-ku, Tokyo EBARA IN FILCO CORPORATION In-company (72) Inventor Haruko Ito 4-2-1 Motofujisawa, Fujisawa-shi, Kanagawa Incorporated EBARA Research Institute
Claims (1)
真空ポンプと該真空ポンプで吸引されるガスを処理する
乾式除害装置からなる真空処理装置の運転方法におい
て、前記真空ポンプ出口部、乾式除害装置入口部又は出
口部、及び乾式除害装置の除害カラム内部のうちのいず
れか１か所以上に温度センサを配備し、該温度センサの
どれかが温度異常上昇を検知すると、前記真空製造装置
に流入するプロセスガスを停止させ、及び／又は、希釈
用不活性ガスを吸引ガス中に大量に流入させることを特
徴とする真空処理装置の運転方法。1. A method for operating a vacuum processing apparatus comprising a vacuum manufacturing apparatus, a vacuum pump provided in communication with the apparatus, and a dry abatement apparatus for processing a gas sucked by the vacuum pump. If a temperature sensor is provided at one or more locations inside the dry abatement device inlet or outlet and inside the abatement column of the dry abatement device, and one of the temperature sensors detects an abnormal temperature rise, A method for operating a vacuum processing apparatus, characterized in that the process gas flowing into the vacuum manufacturing apparatus is stopped, and / or a large amount of an inert gas for dilution is caused to flow into the suction gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4200153A JPH07106315B2 (en) | 1992-07-06 | 1992-07-06 | Operating method of vacuum processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4200153A JPH07106315B2 (en) | 1992-07-06 | 1992-07-06 | Operating method of vacuum processing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0647268A true JPH0647268A (en) | 1994-02-22 |
| JPH07106315B2 JPH07106315B2 (en) | 1995-11-15 |
Family
ID=16419673
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4200153A Expired - Lifetime JPH07106315B2 (en) | 1992-07-06 | 1992-07-06 | Operating method of vacuum processing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07106315B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016176095A (en) * | 2015-03-19 | 2016-10-06 | 大陽日酸株式会社 | Exhaust gas treatment method |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20210127597A1 (en) * | 2018-09-12 | 2021-05-06 | Korea Wheel Corporation | Work room system for plant factory |
-
1992
- 1992-07-06 JP JP4200153A patent/JPH07106315B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016176095A (en) * | 2015-03-19 | 2016-10-06 | 大陽日酸株式会社 | Exhaust gas treatment method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07106315B2 (en) | 1995-11-15 |
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