JPH0237103Y2 - - Google Patents
Info
- Publication number
- JPH0237103Y2 JPH0237103Y2 JP1988147598U JP14759888U JPH0237103Y2 JP H0237103 Y2 JPH0237103 Y2 JP H0237103Y2 JP 1988147598 U JP1988147598 U JP 1988147598U JP 14759888 U JP14759888 U JP 14759888U JP H0237103 Y2 JPH0237103 Y2 JP H0237103Y2
- Authority
- JP
- Japan
- Prior art keywords
- alarm
- silane gas
- fire
- semiconductor
- control
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000007789 gas Substances 0.000 claims description 30
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 20
- 229910000077 silane Inorganic materials 0.000 claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 16
- 238000002485 combustion reaction Methods 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 239000000779 smoke Substances 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 238000003860 storage Methods 0.000 claims description 6
- 230000002265 prevention Effects 0.000 claims description 5
- 231100000331 toxic Toxicity 0.000 claims description 3
- 230000002588 toxic effect Effects 0.000 claims description 3
- 238000001514 detection method Methods 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000001784 detoxification Methods 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Fire-Detection Mechanisms (AREA)
- Emergency Alarm Devices (AREA)
- Fire Alarms (AREA)
Description
【考案の詳細な説明】
この考案は、超LSI工場などにおける製造工程
において発生する処理がスとしてのシランガスの
漏洩あるいは火災発生を検出し、消火装置などの
防災装置および製造工程を適切に制御する半導体
工場などにおける警報および制御装置に関するも
のである。[Detailed description of the invention] This invention detects the leakage of silane gas or the occurrence of a fire during the manufacturing process at a VLSI factory, etc., and appropriately controls disaster prevention devices such as fire extinguishers and the manufacturing process. This relates to alarm and control devices in semiconductor factories and the like.
近年大きな飛躍を遂げている超LSIなどの半導
体工場では、シリコンウエハに絶縁膜を設ける
際、シランガスを使用するが、このような処理ガ
スは有毒であるとともにその濃度が2〜5%以上
になると空気中の酸素と反応し着炎燃焼して危険
であり、ある超LSI工場でこれらガスが原因と思
われる火災が発生し、ただいの損害を被むつた。 Semiconductor factories, such as those for ultra-LSIs, which have made great strides in recent years, use silane gas when forming insulating films on silicon wafers, but such processing gases are toxic and can be dangerous if the concentration exceeds 2-5%. It is dangerous because it reacts with oxygen in the air and ignites and burns, and a fire thought to have been caused by these gases broke out at a super LSI factory, resulting in minor damage.
この考案は以上の点にかんがみ、漏洩したシラ
ンガスが空気中の酸素と反応し燃焼し燃焼生成物
を発生している状態を直ちに検出し、事前にある
いは火災の初期段階において適切な制御を行なう
ことができる半導体工場などの警報および制御装
置を提供するものである。 In consideration of the above points, this device immediately detects the state in which leaked silane gas reacts with oxygen in the air, combusts, and generates combustion products, and performs appropriate control in advance or at the initial stage of a fire. It provides alarm and control equipment for semiconductor factories and other facilities that can perform
以下この考案の一実施例を半導体ウエハに絶縁
膜を形成させる際に使用されるCVD装置
(Chemical Vapor Deposition)およびその周辺
装置に用いた場合について、図面により説明す
る。 Hereinafter, a case where an embodiment of this invention is applied to a CVD apparatus (Chemical Vapor Deposition) used for forming an insulating film on a semiconductor wafer and its peripheral equipment will be described with reference to the drawings.
第1図において、1はシランガスボンベ、2は
アンモニアガスボンベ、3はこれらボンベを収納
する格納箱、6は配管4,5を通じてシランガス
とアンモニアガスを供給し半導体ウエハに絶縁膜
を形成させる窒化膜形成装置(CVD)、8は装置
6から配管7を通じて流出される未反応のシラン
ガスに酸素を供給し強制的に酸化反応させる、す
なわち燃焼処理する除害装置、10は除害装置8
より排気ダクト11へ放出されるガスの状態を監
視するために配管9間に設けられた検出箱、12
は形成装置6内を真空にする真空ポンプ、13は
室内の空気を排気する排気口、14は格納箱3と
排気ダクト11とを結ぶ配管15中に設けられた
ダンパである。また格納箱3と検出箱10とに
は、シランガスが漏洩し空気中の酸素と反応し燃
焼したことにより生ずる燃焼生成物を検出する火
災感知器D1とD2とが設けられる。この場合燃焼
生成物を検出する火災感知器として光電式煙感知
器とイオン化式煙感知器が使用できるが、縦軸に
それぞれの感知器の出力、横軸にシランガスの燃
焼生成物の濃度が示された第3図の特性曲線図に
よれば、光電式煙感知器aよりもイオン化式煙感
知器bの方がシランガスの燃焼生成物に対し高感
度でより早期にその発生が検出できる。さらに上
記感知器D1,D2は第2図に示すように、格納箱
3内に設けられた火災感知器D1は直接、また検
出箱10に設けられた火災感知器D2はインバー
タIを介してOR回路ORに接続され、その出力
は火災警報あるいは消火装置などの防災装置ある
いは半導体製造工程を適切に制御する図示されな
い継電装置に接続される。 In FIG. 1, 1 is a silane gas cylinder, 2 is an ammonia gas cylinder, 3 is a storage box for storing these cylinders, and 6 is a nitride film forming unit that supplies silane gas and ammonia gas through pipes 4 and 5 to form an insulating film on a semiconductor wafer. A device (CVD), 8 is a detoxification device that supplies oxygen to the unreacted silane gas flowing out from the device 6 through the pipe 7 to force an oxidation reaction, that is, a combustion process; 10 is a detoxification device 8;
A detection box 12 is installed between the pipes 9 to monitor the state of the gas discharged into the exhaust duct 11.
13 is a vacuum pump that evacuates the inside of the forming apparatus 6; 13 is an exhaust port that exhausts indoor air; and 14 is a damper provided in a pipe 15 connecting the storage box 3 and the exhaust duct 11. Furthermore, the storage box 3 and the detection box 10 are provided with fire detectors D 1 and D 2 that detect combustion products produced when silane gas leaks, reacts with oxygen in the air, and burns. In this case, photoelectric smoke detectors and ionization smoke detectors can be used as fire detectors to detect combustion products; the vertical axis shows the output of each sensor, and the horizontal axis shows the concentration of silane gas combustion products. According to the characteristic curve diagram shown in FIG. 3, the ionization type smoke detector b is more sensitive to the combustion products of silane gas than the photoelectric type smoke detector a, and can detect the occurrence of the combustion products earlier. Further, as shown in FIG. 2, the above-mentioned detectors D 1 and D 2 are connected directly to the fire detector D 1 installed in the storage box 3, and directly connected to the fire detector D 2 installed in the detection box 10, as shown in FIG. It is connected to the OR circuit OR through the OR circuit, and its output is connected to a disaster prevention device such as a fire alarm or fire extinguisher, or a relay device (not shown) that appropriately controls the semiconductor manufacturing process.
次に上記装置の作用について説明する。窒化膜
形成装置6は、この中に半導体ウエハを入れ、真
空ポンプ12により真空にした後、シランガスボ
ンベ1とアンモニアガスボンベ2とを開きシラン
ガスとアンモニアガスとを装置6に供給し半導体
ウエハに必要な窒化膜、すなわち絶縁膜を生成さ
せる。また未反応ガスを含んだ処理後のガスは除
害装置8において強制的に酸化反応させて安全な
ものとして配管9を通じて排気ダクト11より排
出される。 Next, the operation of the above device will be explained. In the nitride film forming apparatus 6, a semiconductor wafer is placed therein, the vacuum pump 12 is used to create a vacuum, and then the silane gas cylinder 1 and the ammonia gas cylinder 2 are opened to supply silane gas and ammonia gas to the apparatus 6 to form the nitride film necessary for the semiconductor wafer. A nitride film, that is, an insulating film is generated. Further, the treated gas containing unreacted gas is forcibly subjected to an oxidation reaction in the abatement device 8 and is discharged from the exhaust duct 11 through the piping 9 as a safe gas.
一方このような状態において、シランガスボン
ベ1よりシランガスが空気中の酸素と反応し燃焼
すると、その燃焼生成物により火災感知器D1が
動作し、OR回路ORを介して図されない火災警
報や消火置などの防災装置あるいはダンパ14の
開度を全開とし漏洩したガスをダクト11に放出
するなどこの製造工程を制御する継電装置を動作
させる。また検出箱10においては、除害装置8
が正常に動作している間は、配管9を介して焼却
された燃焼生成物が配管9を通じて排気ダクト1
1へ排出されるので、火災感知器D2は燃焼生成
物を検出し動作するが、その出力はインバータI
により反転されるので、OR回路ORにはなんら
入力されず、OR回路ORは動作しない。ところ
が除害装置8が故障し未処理のままのシランガス
が放出され燃焼生成物が発生しなくなると、火災
感知器D2は不動作となるが、インバータIによ
りその出力は反転され出力が発生するのでOR回
路ORを通じて図示されない火災警報や消火装置
などの防災装置あるいは製造工程を制御する継電
装置を動作させる。 On the other hand, in such a situation, when the silane gas from the silane gas cylinder 1 reacts with oxygen in the air and burns, the combustion product activates the fire detector D 1 , and an unplanned fire alarm or fire extinguishing system is activated via the OR circuit OR. A disaster prevention device such as the above or a relay device that controls this manufacturing process is operated, such as by fully opening the damper 14 and releasing the leaked gas into the duct 11. In addition, in the detection box 10, the abatement device 8
is in normal operation, the combustion products incinerated through pipe 9 are discharged through pipe 9 to exhaust duct 1.
1, the fire detector D2 detects the combustion products and operates, but its output is output from the inverter I.
Since it is inverted by , nothing is input to the OR circuit OR, and the OR circuit OR does not operate. However, when the abatement device 8 malfunctions and untreated silane gas is released and no combustion products are generated, the fire detector D 2 becomes inoperable, but its output is reversed by the inverter I and an output is generated. Therefore, through the OR circuit OR, disaster prevention devices such as fire alarms and fire extinguishing devices (not shown) or relay devices that control the manufacturing process are operated.
この考案は以上のように半導体製造工程など、
処理ガスとしての有毒で可燃性のシランガスを使
用する箇所に、このガスの燃焼による燃焼生成物
を検出する火災感知器を設けるようにしたので、
事前にあるいは火災の初期段階において適切な制
御が行なうことができる半導体工場などにおける
警報および制御装置が得られる効果がある。 As mentioned above, this idea can be applied to semiconductor manufacturing processes, etc.
Fire detectors are installed at locations where toxic and flammable silane gas is used as a processing gas to detect combustion products from the combustion of this gas.
This has the effect of providing an alarm and control device for semiconductor factories and the like that can perform appropriate control in advance or at the initial stage of a fire.
第1図はこの考案の一実施例の概略図、第2図
はその回路図、第3図は光電式煙感知器とイオン
化式煙感知器との特性曲線図である。
1……シランガスボンベ、3……格納箱、6…
…窒化膜形成装置、8……除害装置、10……検
出箱、11……排気ダクト、D1,D2……燃焼生
成物を検出する火災感知器。
FIG. 1 is a schematic diagram of an embodiment of this invention, FIG. 2 is a circuit diagram thereof, and FIG. 3 is a characteristic curve diagram of a photoelectric smoke detector and an ionization smoke detector. 1...silane gas cylinder, 3...storage box, 6...
...Nitride film forming device, 8...Abatement device, 10...Detection box, 11...Exhaust duct, D1 , D2 ...Fire detector for detecting combustion products.
Claims (1)
可燃性のシランガスを使用しまた焼却除害する
箇所に、該シランガスが漏洩し空気中の酸素と
反応し燃焼することにより生ずる燃焼生成物を
検出する火災感知器を設け、この感知器の出力
変化により警報を発するとともに消火装置など
の防災装置および半導体製造工程などを制御す
ることを特徴とする半導体工場などにおける警
報および制御装置。 2 使用済のシランガスを燃焼処理する除害装置
の2次側に、出力側にインバータを備えた火災
感知器が設けられた実用新案登録請求の範囲第
1項記載の半導体工場などにおける警報および
制御装置。 3 火災感知器がシランガスボンベを収納した格
納箱に設けられた実用新案登録請求の範囲第1
項記載の半導体工場などにおける警報および制
御装置。 4 火災感知器が、イオン化式煙感知器である実
用新案登録請求の範囲第1項ないし第3項のい
ずれかに記載された半導体工場などにおける警
報および制御装置。[Scope of Claim for Utility Model Registration] 1. When toxic and flammable silane gas is used as a processing gas such as in the semiconductor manufacturing process and is removed by incineration, the silane gas leaks and reacts with oxygen in the air and burns. Alarm and control in semiconductor factories, etc., characterized in that a fire detector is installed to detect combustion products generated, and a change in the output of this detector is used to issue an alarm and control disaster prevention equipment such as a fire extinguisher and semiconductor manufacturing processes. Device. 2. Alarm and control in semiconductor factories, etc. as set forth in Claim 1 of the Utility Model Registration Claim, in which a fire detector equipped with an inverter on the output side is installed on the secondary side of a pollution abatement device that burns used silane gas. Device. 3 Claim No. 1 for Utility Model Registration in which a fire detector is installed in a storage box containing silane gas cylinders
Alarm and control devices in semiconductor factories, etc., as described in Section 2. 4. An alarm and control device for a semiconductor factory or the like as set forth in any one of claims 1 to 3 of the utility model registration claim, wherein the fire detector is an ionization smoke detector.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1988147598U JPH0237103Y2 (en) | 1988-11-14 | 1988-11-14 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1988147598U JPH0237103Y2 (en) | 1988-11-14 | 1988-11-14 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0184185U JPH0184185U (en) | 1989-06-05 |
JPH0237103Y2 true JPH0237103Y2 (en) | 1990-10-08 |
Family
ID=31418150
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1988147598U Expired JPH0237103Y2 (en) | 1988-11-14 | 1988-11-14 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0237103Y2 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7271769B1 (en) * | 2022-05-19 | 2023-05-11 | 大陽日酸株式会社 | High pressure gas facility monitoring system and high pressure gas facility monitoring method |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5138797U (en) * | 1974-09-17 | 1976-03-23 | ||
JPS5721350A (en) * | 1980-05-28 | 1982-02-04 | Naarden International Nv | Perfume composition and use |
-
1988
- 1988-11-14 JP JP1988147598U patent/JPH0237103Y2/ja not_active Expired
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5138797U (en) * | 1974-09-17 | 1976-03-23 | ||
JPS5721350A (en) * | 1980-05-28 | 1982-02-04 | Naarden International Nv | Perfume composition and use |
Also Published As
Publication number | Publication date |
---|---|
JPH0184185U (en) | 1989-06-05 |
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