JPH0413756Y2 - - Google Patents

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Publication number
JPH0413756Y2
JPH0413756Y2 JP1988151278U JP15127888U JPH0413756Y2 JP H0413756 Y2 JPH0413756 Y2 JP H0413756Y2 JP 1988151278 U JP1988151278 U JP 1988151278U JP 15127888 U JP15127888 U JP 15127888U JP H0413756 Y2 JPH0413756 Y2 JP H0413756Y2
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JP
Japan
Prior art keywords
gas
detector
fire
alarm
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1988151278U
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Japanese (ja)
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JPH0184187U (en
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Filing date
Publication date
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Priority to JP1988151278U priority Critical patent/JPH0413756Y2/ja
Publication of JPH0184187U publication Critical patent/JPH0184187U/ja
Application granted granted Critical
Publication of JPH0413756Y2 publication Critical patent/JPH0413756Y2/ja
Expired legal-status Critical Current

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  • Fire Alarms (AREA)
  • Fire-Detection Mechanisms (AREA)

Description

【考案の詳細な説明】 この考案は、超LSI工場などにおける製造工程
において発生する処理ガスの漏洩あるいは火災発
生を検出し、消火装置などの防災装置および製造
工程を適切に制御する半導体工場などにおける警
報および制御装置に関するものである。
[Detailed description of the invention] This invention is used in semiconductor factories, etc., to detect leakage of processing gas or the occurrence of fire that occurs during the manufacturing process in VLSI factories, etc., and to appropriately control disaster prevention devices such as fire extinguishers and manufacturing processes. Concerning alarm and control devices.

近年大きな飛躍を遂げている超LSIなどの半導
体工場では、シリコンウエハに絶縁膜を設ける
際、シランガスを使用するが、このような処理ガ
スは有毒であるとともにその濃度が2〜5%以上
になると空気中の酸素と反応し着炎燃焼して危険
であり、ある超LSI工場でこれらガスが原因と思
われる火災が発生し、ただいの損害を被むつた。
Semiconductor factories, such as those for ultra-LSIs, which have made great strides in recent years, use silane gas when forming insulating films on silicon wafers, but such processing gases are toxic and can be dangerous if the concentration exceeds 2-5%. It is dangerous because it reacts with oxygen in the air and ignites and burns, and a fire thought to have been caused by these gases broke out at a super LSI factory, resulting in minor damage.

この考案は以上の点にかんがみ、漏洩した処理
ガスが、ガス自体の状態または空気中の酸素と反
応し燃焼し燃焼生成物を発生している状態のいず
れをも検出するようにし、事前にあるいは火災の
初期段階において適切な制御を行なうことができ
る半導体工場などの警報および制御装置を提供す
るものである。
In consideration of the above points, this invention detects whether the leaked process gas is in its own state or reacts with oxygen in the air, burns, and generates combustion products. The present invention provides an alarm and control device for semiconductor factories and the like that can perform appropriate control in the early stages of a fire.

以下この考案の一実施例を半導体ウエハに絶縁
膜を形成させる際に使用されるCVD装置
(Chemical Vapor Deposition)およびその周辺
装置に用いた場合について、図面により説明す
る。
Hereinafter, a case where an embodiment of this invention is applied to a CVD apparatus (Chemical Vapor Deposition) used for forming an insulating film on a semiconductor wafer and its peripheral equipment will be described with reference to the drawings.

第1図において、1はシランガスボンベ、2は
アンモニアガスボンベ、3はこれらボンベを収納
する格納箱、6は配管4,5を通じてシランガス
とアンモニアガスを供給し半導体ウエハに絶縁膜
を形成させる窒化膜形成装置(CVD)、8は装置
6から配管7を通じて流出される未反応のシラン
ガスに酸素を供給し強制的に酸化反応させる、す
なわち燃焼処理する除害装置、10は除害装置8
より排気ダクト11へ放出されるガスの状態を監
視するために配管9間に設けられた検出箱、12
は形成装置6内を真空にする真空ポンプ、13は
室内の空気を排気する排気口である。また格納箱
3と検出箱10とには、シランガスなどの処理ガ
スの漏洩を検出するガス検出器G1,G2と、ガス
が燃焼したことにより生ずる燃焼生成物を検出す
る火災感知器D1,とD2とが設けられる。この場
合ガス検出器G1,G2としてはガス粒子による散
乱光を検出する光学的なガス検出器も使用できる
が、特公昭55−14380号公報で一酸化炭素の検出
素子として知られている酸化第二スズの組成物中
に白金黒を含有した金属酸化物半導体をシランガ
スの雰囲気中でエージングすると、0.2〜0.5%以
上の低濃度のシランガスに応答する、この実施例
に好適なガス検出器が得られる。また燃焼生成物
を検出する火災感知器として光電式煙感知器とイ
オン化式煙感知器が使用できるが、縦軸にそれぞ
れの感知器の出力、横軸にシランガスの燃焼生成
物の濃度が示された第3図の特性曲線図によれ
ば、光電式煙感知器aよりもイオン化式煙感知器
bの方がシランガスの燃焼生成物に対し高感度で
より早期にその発生が検出できる。さらに上記検
出器G1,G2と感知器D1,D2は第2図に示すよう
に、格納箱3内に設けられたガス検出器G1と火
災感知器D1は第1のOR回路OR1に、検出箱10
内に設けられたガス検出器G2は直接また火災感
知器D2はインバータを介して第2のOR回路
OR2に接続され、それら出力は第3のOR回路
OR3に接続され、その出力は火災警報あるいは消
火装置などの防災装置あるいは半導体製造工程を
適切に制御する図示されない継電装置に接続され
る。
In FIG. 1, 1 is a silane gas cylinder, 2 is an ammonia gas cylinder, 3 is a storage box for storing these cylinders, and 6 is a nitride film forming unit that supplies silane gas and ammonia gas through pipes 4 and 5 to form an insulating film on a semiconductor wafer. A device (CVD), 8 is a detoxification device that supplies oxygen to the unreacted silane gas flowing out from the device 6 through the pipe 7 to force an oxidation reaction, that is, a combustion process; 10 is a detoxification device 8;
A detection box 12 is installed between the pipes 9 to monitor the state of the gas discharged into the exhaust duct 11.
1 is a vacuum pump that evacuates the inside of the forming apparatus 6, and 13 is an exhaust port that exhausts the air in the room. Furthermore, the storage box 3 and the detection box 10 include gas detectors G 1 and G 2 that detect leakage of processing gas such as silane gas, and a fire detector D 1 that detects combustion products generated when the gas is combusted. , and D 2 are provided. In this case, optical gas detectors that detect light scattered by gas particles can also be used as the gas detectors G1 and G2 , but a device known as a carbon monoxide detection element is disclosed in Japanese Patent Publication No. 55-14380. A gas detector suitable for this example, which responds to a low concentration of silane gas of 0.2 to 0.5% or more when a metal oxide semiconductor containing platinum black in a stannic oxide composition is aged in an atmosphere of silane gas. is obtained. Photoelectric smoke detectors and ionization smoke detectors can be used as fire detectors to detect combustion products, but the vertical axis shows the output of each sensor, and the horizontal axis shows the concentration of silane gas combustion products. According to the characteristic curve diagram in FIG. 3, the ionization type smoke detector b has higher sensitivity to the combustion products of silane gas and can detect the generation thereof earlier than the photoelectric type smoke detector a. Furthermore, the above-mentioned detectors G 1 and G 2 and the sensors D 1 and D 2 are connected to the first OR as shown in FIG. Detection box 10 in circuit OR 1
The gas detector G 2 installed inside is connected to the second OR circuit directly, and the fire detector D 2 is connected to the second OR circuit via an inverter.
OR 2 and their outputs are connected to the third OR circuit
It is connected to OR 3 , and its output is connected to a disaster prevention device such as a fire alarm or fire extinguisher, or a relay device (not shown) that appropriately controls the semiconductor manufacturing process.

次に上記装置の作用について説明する。窒化膜
形成装置6は、この中に半導体ウエハを入れ、真
空ポンプ12により真空にした後、シランガスボ
ンベ1とアンモニアガスボンベ2とを開きシラン
ガスとアンモニアガスとを装置6に供給し半導体
ウエハに必要な窒化膜、すなわち絶縁膜を生成さ
せる。また未反応ガスを含んだ処理後のガスは除
害装置8において強制的に酸化反応されて安全な
ものとして配管9を通じて排気ダクト11より排
出される。
Next, the operation of the above device will be explained. In the nitride film forming apparatus 6, a semiconductor wafer is placed therein, the vacuum pump 12 is used to create a vacuum, and then the silane gas cylinder 1 and the ammonia gas cylinder 2 are opened to supply silane gas and ammonia gas to the apparatus 6 to form the nitride film necessary for the semiconductor wafer. A nitride film, that is, an insulating film is generated. Further, the treated gas containing unreacted gas is forcibly oxidized in the abatement device 8 and is discharged from the exhaust duct 11 through the pipe 9 as a safe gas.

一方このような状態において、シランガスボン
ベ1よりシランガスが空気中の酸素と反応し着炎
燃焼しない程度の少量漏れると、そのガス自体を
検出しガス検出器G1が動作し、またガスボンベ
1よりシランガスが漏れる量が多く直ちに空気中
の酸素と反応し着炎燃焼してしまう場合はその燃
焼生成物により火災感知器D1が動作し、OR回路
OR1,OR3を介して図示されない火災警報や消火
装置などの防災装置あるいはこの製造工程を制御
する継電装置を動作させる。また検出箱10にお
いては、除害装置8が正常に動作している間は、
配管9を介して焼却された燃焼生成物が配管9を
通じて排気ダクト11へ排出されるので、ガス検
出器G2は動作せずその出力を出さず、また火災
感知器D2は燃焼生成物を検出し動作するが、そ
の出力はインバータにより反転されるので、
OR回路OR2にはなんら入力されず、OR回路OR2
は動作しない。ところが除害装置8が故障し未処
理のままのシランガスが放出され燃焼生成物が発
生しなくなると、シランガスによりガス検出器
G2が動作するか、または火災感知器D2は不動作
となるが、インバータによりその出力は反転さ
れ出力が発生するのでOR回路OR2が動作し、OR
回路OR3を通じて図示されない火災警報や消火装
置などの防災装置あるいは製造工程を制御する継
電装置を動作させる。
On the other hand, in such a situation, if a small amount of silane gas leaks from the silane gas cylinder 1 to the extent that it reacts with oxygen in the air and does not ignite and burn, the gas itself is detected and the gas detector G 1 is activated, and the silane gas from the gas cylinder 1 is leaked. If a large amount of gas leaks and immediately reacts with oxygen in the air, flaming and burning, the combustion products will activate the fire detector D1 , and the OR circuit will be activated.
Via OR 1 and OR 3 , a disaster prevention device (not shown) such as a fire alarm or fire extinguishing device or a relay device that controls this manufacturing process is operated. In addition, in the detection box 10, while the abatement device 8 is operating normally,
Since the combustion products incinerated through the pipe 9 are discharged through the pipe 9 to the exhaust duct 11, the gas detector G 2 does not operate and does not output its output, and the fire detector D 2 does not detect the combustion products. It detects and operates, but its output is inverted by an inverter, so
Nothing is input to OR circuit OR 2 , and OR circuit OR 2
doesn't work. However, when the abatement device 8 malfunctions and untreated silane gas is released and no combustion products are generated, the silane gas causes the gas detector to
G 2 will operate, or fire detector D 2 will be inoperative, but its output will be inverted by the inverter and an output will be generated, so the OR circuit OR 2 will operate, and the OR circuit will operate.
Disaster prevention devices such as fire alarms and fire extinguishing devices (not shown) or relay devices that control the manufacturing process are operated through circuit OR 3 .

なお上記実施例では、ガス検出器と火災感知器
とを別個に設けたが、両者を一体としかつ第2図
の回路機能を組み込むようにしてもよい。
In the above embodiment, the gas detector and the fire detector are provided separately, but they may be integrated and the circuit function shown in FIG. 2 may be incorporated.

この考案の火災警報装置は以上のように半導体
製造工程など、シランガスなどの有毒で可燃性の
処理ガスを使用する箇所であつて、処理ガスを格
納および処理する箇所には、処理ガスを選択的に
検出するガス検出器と該処理ガスの燃焼生成物を
検出する火災感知器を設け、また使用後の処理ガ
スを安全に処理する除害装置の二次側には、処理
ガスを選択的に検出するガス検出器と出力側にイ
ンバータを備えた処理ガスの燃焼生成物を検出す
る火災感知器とを設け、上記検出器と感知器の動
作により警報を発すると共に消火装置などの防災
装置および半導体製造工程などを制御するように
したので、処理ガスの何れの形の漏洩にも対処で
きまた既存の感知器にインバータを設けるだけで
対処できるので、事前にあるいは火災の初期段階
において適切な制御が行うことができ且つ安価な
半導体工場などにおける警報および制御装置が得
られる効果がある。
As mentioned above, the fire alarm system of this invention is used in places where toxic and flammable process gases such as silane gas are used, such as in semiconductor manufacturing processes, and where process gases are stored and processed. A gas detector is installed to detect the process gas, and a fire detector is installed to detect the combustion products of the process gas.The secondary side of the abatement device that safely processes the process gas after use is equipped with a gas detector to detect the combustion products of the process gas. It is equipped with a gas detector to detect the gas and a fire detector equipped with an inverter on the output side to detect the combustion products of the process gas, and the operation of the detector and the sensor generates an alarm and also fires a disaster prevention device such as a fire extinguisher and a semiconductor. Since the manufacturing process is controlled, any type of leakage of process gas can be dealt with, and it can be dealt with by simply installing an inverter in the existing detector, so appropriate control can be carried out in advance or at the initial stage of a fire. This has the effect of providing an alarm and control device for semiconductor factories and the like that is easy to use and inexpensive.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はこの考案の一実施例の概略図、第2図
はその回路図、第3図は光電式煙感知器とイオン
化式煙感知器との特性曲線図である。 1……シランガスボンベ、3……格納箱、6…
…窒化膜形成装置、8……除害装置、10……検
出箱、11……排気ダクト、G1,G2……ガス検
出器、D1,D2……燃焼生成物を検出する火災感
知器。
FIG. 1 is a schematic diagram of an embodiment of this invention, FIG. 2 is a circuit diagram thereof, and FIG. 3 is a characteristic curve diagram of a photoelectric smoke detector and an ionization smoke detector. 1...silane gas cylinder, 3...storage box, 6...
... Nitride film forming device, 8 ... Elimination device, 10 ... Detection box, 11 ... Exhaust duct, G 1 , G 2 ... Gas detector, D 1 , D 2 ... Fire that detects combustion products sensor.

Claims (1)

【実用新案登録請求の範囲】 1 半導体製造工程など、シランガスなどの有毒
で可燃性の処理ガスを使用する箇所であつて、
処理ガスを格納および処理する箇所には、処理
ガスを選択的に検出するガス検出器と該処理ガ
スの燃焼生成物を検出する火災感知器を設け、
また使用後の処理ガスを安全に処理する除害装
置の二次側には、処理ガスを選択的に検出する
ガス検出器と出力側にインバータを備えた処理
ガスの燃焼生成物を検出する火災感知器とを設
け、上記検出器と感知器のいずれかの動作によ
り警報を発すると共に消火装置などの防災装置
および半導体製造工程などを制御することを特
徴とする半導体工場などにおける警報および制
御装置。 2 ガス検出器は、その検出素子が金属酸化物半
導体よりなる実用新案登録請求の範囲第1項記
載の半導体工場などにおける警報および制御装
置。 3 火災感知器が、イオン化式煙感知器である実
用新案登録請求の範囲第1項記載の半導体工場
などにおける警報および制御装置。
[Scope of claim for utility model registration] 1. Where toxic and flammable processing gases such as silane gas are used, such as in semiconductor manufacturing processes,
A gas detector for selectively detecting the processing gas and a fire detector for detecting combustion products of the processing gas are installed at locations where the processing gas is stored and processed.
In addition, the secondary side of the abatement device that safely processes the processed gas after use is equipped with a gas detector that selectively detects the processed gas and an inverter on the output side to detect the combustion products of the processed gas. What is claimed is: 1. An alarm and control device for a semiconductor factory, etc., which is equipped with a sensor, and issues an alarm by the operation of either of the above-mentioned detectors and the sensor, and controls a disaster prevention device such as a fire extinguisher, a semiconductor manufacturing process, etc. 2. The gas detector is an alarm and control device in a semiconductor factory or the like as set forth in claim 1, wherein the detection element thereof is made of a metal oxide semiconductor. 3. The alarm and control device for a semiconductor factory, etc. as set forth in claim 1, wherein the fire detector is an ionization smoke detector.
JP1988151278U 1988-11-22 1988-11-22 Expired JPH0413756Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1988151278U JPH0413756Y2 (en) 1988-11-22 1988-11-22

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1988151278U JPH0413756Y2 (en) 1988-11-22 1988-11-22

Publications (2)

Publication Number Publication Date
JPH0184187U JPH0184187U (en) 1989-06-05
JPH0413756Y2 true JPH0413756Y2 (en) 1992-03-30

Family

ID=31425177

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1988151278U Expired JPH0413756Y2 (en) 1988-11-22 1988-11-22

Country Status (1)

Country Link
JP (1) JPH0413756Y2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101988361B1 (en) * 2017-06-15 2019-06-12 버슘머트리얼즈 유에스, 엘엘씨 Gas Supply System

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5138797U (en) * 1974-09-17 1976-03-23
JPS5396895A (en) * 1977-02-03 1978-08-24 Nitto Electric Ind Co Gas sensor element
JPS553510A (en) * 1978-06-21 1980-01-11 Yasunori Nagao Inner cylinder for rotary incinerator
JPS5721350A (en) * 1980-05-28 1982-02-04 Naarden International Nv Perfume composition and use

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0216283Y2 (en) * 1977-09-19 1990-05-02

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5138797U (en) * 1974-09-17 1976-03-23
JPS5396895A (en) * 1977-02-03 1978-08-24 Nitto Electric Ind Co Gas sensor element
JPS553510A (en) * 1978-06-21 1980-01-11 Yasunori Nagao Inner cylinder for rotary incinerator
JPS5721350A (en) * 1980-05-28 1982-02-04 Naarden International Nv Perfume composition and use

Also Published As

Publication number Publication date
JPH0184187U (en) 1989-06-05

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