JPH0645107A - Barium titanate semiconductor porcelain having negative resistance temperature characteristics - Google Patents
Barium titanate semiconductor porcelain having negative resistance temperature characteristicsInfo
- Publication number
- JPH0645107A JPH0645107A JP21818292A JP21818292A JPH0645107A JP H0645107 A JPH0645107 A JP H0645107A JP 21818292 A JP21818292 A JP 21818292A JP 21818292 A JP21818292 A JP 21818292A JP H0645107 A JPH0645107 A JP H0645107A
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- JP
- Japan
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- site
- barium titanate
- temperature
- constant
- negative resistance
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、スイッチング電源な
どにおける電源投入初期の過電流を防止するための過電
流防止素子などに用いられる負の抵抗温度特性を有する
チタン酸バリウム系半導体磁器に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a barium titanate-based semiconductor porcelain having a negative resistance temperature characteristic used for an overcurrent preventing element for preventing an overcurrent at the initial stage of power supply in a switching power supply or the like.
【０００２】[0002]
【従来の技術及び発明が解決しようとする課題】スイッ
チング電源などにおいて、電源投入時の過電流を防止す
るために、温度が上昇すると抵抗が低下する負の温度特
性を有する半導体磁器（負特性サーミスタ）が用いられ
ている。この負特性サーミスタは、室温における抵抗が
高いため、スイッチング電源などの電源投入初期におけ
る過電流を抑制するとともに、その後の自己発熱により
昇温して低抵抗になるため、定常状態では電力消費量が
減少するという特性を有しており、過電流防止素子とし
て種々の用途に広く用いられている。2. Description of the Related Art In a switching power supply or the like, in order to prevent an overcurrent at the time of power-on, a semiconductor ceramic (negative-characteristic thermistor) having a negative temperature characteristic in which the resistance decreases as the temperature rises. ) Is used. Since this negative-characteristic thermistor has a high resistance at room temperature, it suppresses overcurrent at the initial stage of power-on of a switching power supply, etc., and then it self-heats to raise its temperature to a low resistance, so power consumption in the steady state is reduced. It has the property of decreasing and is widely used in various applications as an overcurrent preventing element.
【０００３】しかし、スイッチング電源などに使用され
る従来の負特性サーミスタは、温度と抵抗との関係を表
すＢ定数が２０００〜４０００Ｋであるため、雰囲気温
度の影響を受けやすく、外気温度の変化により初期抵抗
が大きく変動し、立上がり特性にばらつきが生じるとい
う問題点がある。特に、０℃以下の低温では立上がりが
遅くなり過ぎるという問題点がある。However, a conventional negative characteristic thermistor used for a switching power supply or the like has a B constant of 2000 to 4000K, which represents the relationship between temperature and resistance, and is therefore easily affected by the ambient temperature, and changes due to changes in the outside air temperature. There is a problem that the initial resistance fluctuates greatly and the rising characteristics vary. In particular, at a low temperature of 0 ° C. or lower, there is a problem that the rise is too slow.
【０００４】上記のような問題点を解決するためには、
常温付近（０〜５０℃）でＢ定数が小さく、それ以上の
温度になるとＢ定数が大きくなるような特性を有する負
特性サーミスタが必要となる。In order to solve the above problems,
A negative characteristic thermistor having a characteristic that the B constant is small at around room temperature (0 to 50 ° C.) and becomes large at a temperature higher than that is required.
【０００５】このような素子として、チタン酸バリウム
（ＢａＴｉＯ3）にＬｉ2ＣＯ3を２０重量％添加した素
子が提案されている（特公昭４８−６３５２号公報）。As such an element, an element in which 20% by weight of Li 2 CO 3 is added to barium titanate (BaTiO 3 ) has been proposed (Japanese Patent Publication No. 48-6352).
【０００６】しかし、この素子は、相転移点を越えると
Ｂ定数が急激に大きくなるという特性を有しているもの
の、１４０℃の比抵抗が１０5Ω・cm以上と大きいた
め、定常状態における電力消費量が大きいという問題点
がある。However, this element has a characteristic that the B constant rapidly increases when the phase transition point is exceeded, but since the specific resistance at 140 ° C. is as large as 10 5 Ω · cm or more, it is in a steady state. There is a problem that the power consumption is large.
【０００７】この発明は、上記問題点を解決するもので
あり、抵抗が低く、通電時の電力損失を抑えることがで
きるとともに、Ｂ定数が、室温では小さく、高温になる
と大きくなるような負の抵抗温度特性を有するチタン酸
バリウム系半導体磁器を提供することを目的とする。The present invention solves the above-mentioned problems. It has a low resistance and can suppress the power loss during energization, and the B constant is negative at room temperature and large at high temperatures. An object of the present invention is to provide a barium titanate-based semiconductor ceramic having resistance temperature characteristics.
【０００８】[0008]
【課題を解決するための手段】上記目的を達成するため
に、この発明の負の抵抗温度特性を有するチタン酸バリ
ウム系半導体磁器は、負の抵抗温度特性を有するチタン
酸バリウム系半導体磁器において、ＢａサイトとＴｉサ
イトのモル比（Ｂａサイト／Ｔｉサイト）を１．００１
〜１．０５としたことを特徴とする。In order to achieve the above object, a barium titanate-based semiconductor ceramic having a negative resistance-temperature characteristic of the present invention is a barium titanate-based semiconductor ceramic having a negative resistance-temperature characteristic. The molar ratio of Ba site to Ti site (Ba site / Ti site) is 1.001.
It is characterized in that it is set to 1.05.
【０００９】すなわち、この発明の負の抵抗温度特性を
有するチタン酸バリウム系半導体磁器は、Ｂａサイト／
Ｔｉサイト（モル比）を１．００１〜１．０５の範囲に
調整することにより、抵抗を低く抑えるとともに、立方
晶から正方晶への相転移点（例えば、１２０℃）以上の
温度におけるＢ定数を、相転移点以下の温度におけるＢ
定数よりも大きくするようにしている。That is, the barium titanate-based semiconductor porcelain having the negative resistance-temperature characteristic of the present invention has a Ba site /
By adjusting the Ti site (molar ratio) in the range of 1.001 to 1.05, the resistance is suppressed to a low level, and the B constant at a temperature of the phase transition point from the cubic system to the tetragonal system (for example, 120 ° C.) or higher. At a temperature below the phase transition point
It is made larger than the constant.
【００１０】なお、Ｂａサイトとは、例えば、チタン酸
バリウム系半導体を一般式(1) （Ｂａ1-XＡX）m（Ｔｉ1-YＢY）Ｏ3 (1) で表した場合の（Ｂａ1-XＡX）の部分を意味する。Ｂａ
サイトに入るとされている元素Ａとしては、Ｃａ，Ｓ
ｒ，Ｐｂ，Ｌａ，Ｎｄなどの元素が例示されるが、これ
に限られるものではなく、また、不要であれば添加しな
くてもよい。The Ba site is, for example, a barium titanate-based semiconductor represented by the general formula (1) (Ba 1-X A X ) m (Ti 1-Y B Y ) O 3 (1). It means a portion of (Ba 1-X A X ). Ba
The elements A that are supposed to enter the site are Ca and S
Elements such as r, Pb, La, and Nd are exemplified, but the elements are not limited to these and may be omitted if not necessary.
【００１１】また、Ｔｉサイトとは、上記の式(1)の
（Ｔｉ1-YＢY）の部分を意味している。Ｔｉサイトに入
るとされている元素Ｂとしては、Ｚｒ，Ｓｎ，Ｎｂ，Ｔ
ａ，Ｓｂなどの元素が例示されるが、これに限られるも
のではなく、また、不要であれば添加しなくてもよい。The Ti site means the portion of (Ti 1 -Y B Y ) in the above formula (1). As the element B which is considered to enter the Ti site, Zr, Sn, Nb, T
Elements such as a and Sb are exemplified, but the elements are not limited to these and may be omitted if not necessary.
【００１２】この発明において、ＢａサイトとＴｉサイ
トのモル比とは、式(1)における（Ｂａ1-XＡX）と（Ｔ
ｉ1-YＢY）のモル比、すなわち、焼成体（チタン酸バリ
ウム系半導体磁器）中における（Ｂａ1-XＡX）／（Ｔｉ
1-YＢY）の値（式(1)のｍ）を意味している。In the present invention, the molar ratio of Ba site to Ti site means (Ba 1-X A X ) and (T 1) in the formula (1).
i 1-Y B Y ) molar ratio, that is, (Ba 1-X A X ) / (Ti in the fired body (barium titanate-based semiconductor porcelain).
1-Y value of B Y) means the m) (Equation (1).
【００１３】[0013]
【実施例】以下に、この発明の実施例を示してその特徴
をさらに詳しく説明する。EXAMPLES The features of the present invention will be described in more detail below with reference to examples of the present invention.
【００１４】ＢａＣＯ3、Ｌａ2Ｏ3、ＴｉＯ2、及びＳｉ
Ｏ2の粉末を下記の式(2) （Ｂａ0.9999Ｌａ0.0001）mＴｉＯ3＋0.007ＳｉＯ2 (2) で表される組成となるように秤量する。それから、各原
料粉末を水とともにボールミルで５時間湿式混合して乾
燥した後、１１５０℃で２時間仮焼する。次に、得られ
た粉末（仮焼粉末）にバインダーを加えてボールミルで
５時間湿式混合して粉砕し、濾過、乾燥を行った後、直
径１０mmの円板に加圧成形し、窒素に３％の水素を混合
した雰囲気中（Ｈ2／Ｎ2＝３vol％）において１３００
℃で２時間加熱して焼結した。それから、焼結した円板
の両側にＩｎ−Ｇａを塗布して電極を形成する。BaCO 3 , La 2 O 3 , TiO 2 , and Si
The O 2 powder is weighed so as to have a composition represented by the following formula (2) (Ba 0.9999 La 0.0001 ) m TiO 3 + 0.007SiO 2 (2). Then, each raw material powder is wet mixed with water in a ball mill for 5 hours, dried, and then calcined at 1150 ° C. for 2 hours. Next, a binder is added to the obtained powder (calcined powder), and the mixture is wet mixed in a ball mill for 5 hours, crushed, filtered, dried, and then pressure-molded into a disk having a diameter of 10 mm, and nitrogen is added to % In a mixed atmosphere of hydrogen (H 2 / N 2 = 3 vol%) 1300
Sintered by heating for 2 hours at ℃. Then, In—Ga is applied to both sides of the sintered disk to form electrodes.
【００１５】このようにして作成した試料について、−
４０℃，２５℃，１５０℃の比抵抗ρ、２５℃と１５０
℃のρの比率、２５℃，１５０℃のＢ定数、２５℃と１
５０℃のＢ定数の比率などを測定、算出した。その結果
を表１に示す。Regarding the sample thus prepared,
40 ° C, 25 ° C, 150 ° C resistivity ρ, 25 ° C and 150
Ρ ratio of ℃, 25 ℃, B constant of 150 ℃, 25 ℃ and 1
The ratio of B constant at 50 ° C. was measured and calculated. The results are shown in Table 1.
【００１６】[0016]
【表１】 [Table 1]
【００１７】なお、表１において、試料番号に＊印を付
したものはこの発明の範囲外の比較例であり、その他の
ものはこの発明の実施例である。In Table 1, the sample numbers marked with * are comparative examples outside the scope of the present invention, and the others are examples of the present invention.
【００１８】また、ＢａサイトとＴｉサイトのモル比
（Ｂａサイト／Ｔｉサイト）ｍ＝１．０１０の試料の、
比抵抗と温度との関係（抵抗温度特性）を図１に示す。Further, a sample having a molar ratio of Ba site and Ti site (Ba site / Ti site) m = 1.010,
The relationship between the specific resistance and the temperature (resistance temperature characteristic) is shown in FIG.
【００１９】図１より、０〜１２０℃の範囲において、
比抵抗は約４．０×１０2Ω・cm前後でほぼ一定であり、
この試料は１２０℃以上でＢ定数が約２５００ＫのＮＴ
Ｃ特性を示す。From FIG. 1, in the range of 0 to 120 ° C.,
The specific resistance is almost constant at around 4.0 × 10 2 Ω · cm,
This sample is NT with a B constant of about 2500K at 120 ° C or higher.
The C characteristic is shown.
【００２０】また、表１より、Ｂａサイト／Ｔｉサイト
（モル比）ｍを１．００１〜１．０５０の範囲に調整す
ることにより、Ｂ１５０℃／Ｂ２５℃の値が１より大き
く、Ｂ定数が立方晶−正方晶相転移温度（例えば、１２
０℃）以上で大きくなるようなチタン酸バリウム系半導
体が得られることがわかる。Further, from Table 1, by adjusting the Ba site / Ti site (molar ratio) m in the range of 1.001 to 1.050, the value of B150 ° C./B25° C. is larger than 1 and the B constant is Cubic-tetragonal phase transition temperature (eg 12
It can be seen that a barium titanate-based semiconductor which becomes larger at 0 ° C. or higher can be obtained.
【００２１】なお、Ｂａサイト／Ｔｉサイト（モル比）
ｍが１．０５０を越えて、例えば、１．０６０になると
（表１のNo.９）、ＮＴＣ特性が失われてＰＴＣ特性を
示すようになり、スイッチング電源用のＮＴＣ材料とし
て使用することができなくなるため好ましくない。Ba site / Ti site (molar ratio)
When m exceeds 1.050, for example, 1.060 (No. 9 in Table 1), the NTC characteristics are lost and the PTC characteristics are exhibited, and it can be used as an NTC material for a switching power supply. It is not preferable because it cannot be done.
【００２２】[0022]
【発明の効果】上述のように、この発明の負の抵抗温度
特性を有するチタン酸バリウム系半導体磁器は、Ｂａサ
イト／Ｔｉサイト（モル比）を１．００１〜１．０５に
調整するようにしているので、低温での温度安定性に優
れているとともに、低抵抗で、立方晶から正方晶への相
転移点（例えば、１２０℃）以上の温度におけるＢ定数
が、相転移点以下の温度におけるＢ定数よりも相当に大
きい負の抵抗温度特性を有するチタン酸バリウム系半導
体磁器を得ることができる。As described above, in the barium titanate-based semiconductor ceramic having the negative resistance temperature characteristic of the present invention, the Ba site / Ti site (molar ratio) should be adjusted to 1.001 to 1.05. Therefore, the temperature stability at low temperature is excellent, the resistance is low, and the B constant at a temperature of the cubic to tetragonal phase transition point (for example, 120 ° C.) or higher is equal to or lower than the phase transition point. It is possible to obtain a barium titanate-based semiconductor porcelain having a negative resistance-temperature characteristic which is considerably larger than the B constant in the above.
【図１】この発明の一実施例にかかる負の抵抗温度特性
を有するチタン酸バリウム系半導体磁器の抵抗温度特性
を示す線図である。FIG. 1 is a diagram showing a resistance temperature characteristic of a barium titanate-based semiconductor ceramic having a negative resistance temperature characteristic according to an embodiment of the present invention.
Claims (1)
ウム系半導体磁器において、ＢａサイトとＴｉサイトの
モル比（Ｂａサイト／Ｔｉサイト）が１．００１〜１．
０５であることを特徴とする負の抵抗温度特性を有する
チタン酸バリウム系半導体磁器。1. In a barium titanate-based semiconductor ceramic having a negative resistance temperature characteristic, the molar ratio of Ba site to Ti site (Ba site / Ti site) is from 1.001 to 1.
A barium titanate-based semiconductor porcelain having a negative resistance-temperature characteristic.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21818292A JP3208857B2 (en) | 1992-07-24 | 1992-07-24 | Barium titanate-based semiconductor porcelain with negative resistance temperature characteristics |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21818292A JP3208857B2 (en) | 1992-07-24 | 1992-07-24 | Barium titanate-based semiconductor porcelain with negative resistance temperature characteristics |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0645107A true JPH0645107A (en) | 1994-02-18 |
| JP3208857B2 JP3208857B2 (en) | 2001-09-17 |
Family
ID=16715903
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21818292A Expired - Lifetime JP3208857B2 (en) | 1992-07-24 | 1992-07-24 | Barium titanate-based semiconductor porcelain with negative resistance temperature characteristics |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3208857B2 (en) |
-
1992
- 1992-07-24 JP JP21818292A patent/JP3208857B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP3208857B2 (en) | 2001-09-17 |
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