JPH04144201A - Positive temperature coefficient thermistor and manufacture thereof - Google Patents
Positive temperature coefficient thermistor and manufacture thereofInfo
- Publication number
- JPH04144201A JPH04144201A JP2268108A JP26810890A JPH04144201A JP H04144201 A JPH04144201 A JP H04144201A JP 2268108 A JP2268108 A JP 2268108A JP 26810890 A JP26810890 A JP 26810890A JP H04144201 A JPH04144201 A JP H04144201A
- Authority
- JP
- Japan
- Prior art keywords
- metal element
- added
- rare earth
- trivalent
- earth metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 3
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 17
- 150000002910 rare earth metals Chemical class 0.000 claims abstract description 15
- 239000000203 mixture Substances 0.000 claims abstract description 8
- 239000004065 semiconductor Substances 0.000 claims abstract description 8
- 229910002113 barium titanate Inorganic materials 0.000 claims abstract description 6
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical group [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000002994 raw material Substances 0.000 claims abstract description 6
- 229910052691 Erbium Inorganic materials 0.000 claims abstract description 4
- 229910052772 Samarium Inorganic materials 0.000 claims abstract description 4
- 229910052788 barium Inorganic materials 0.000 claims abstract description 4
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims abstract description 4
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 claims abstract description 4
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052712 strontium Inorganic materials 0.000 claims abstract description 4
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052723 transition metal Inorganic materials 0.000 claims abstract description 4
- 229910052777 Praseodymium Inorganic materials 0.000 claims abstract description 3
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 3
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 2
- 238000005245 sintering Methods 0.000 claims description 2
- 230000007423 decrease Effects 0.000 abstract description 11
- 229910052751 metal Inorganic materials 0.000 abstract description 6
- 239000002184 metal Substances 0.000 abstract description 4
- 239000010955 niobium Substances 0.000 abstract description 4
- 229910052727 yttrium Inorganic materials 0.000 abstract description 4
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052746 lanthanum Inorganic materials 0.000 abstract description 3
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052758 niobium Inorganic materials 0.000 abstract description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052715 tantalum Inorganic materials 0.000 abstract description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052684 Cerium Inorganic materials 0.000 abstract description 2
- 229910052787 antimony Inorganic materials 0.000 abstract description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052797 bismuth Inorganic materials 0.000 abstract description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 abstract description 2
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 abstract description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052721 tungsten Inorganic materials 0.000 abstract description 2
- 239000010937 tungsten Substances 0.000 abstract description 2
- -1 gadolinum Chemical compound 0.000 abstract 1
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 3
- 239000004615 ingredient Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052454 barium strontium titanate Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000077 insect repellent Substances 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、温度変化により抵抗が大幅に変化する素子に
関し、特に正の抵抗温度特性（以下ＰＴＣ特性と称す）
を有するサーミスタにおいて常温抵抗の小さい素子に関
する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to an element whose resistance changes significantly due to temperature change, and particularly relates to a positive resistance temperature characteristic (hereinafter referred to as PTC characteristic).
The present invention relates to a thermistor having a low resistance at room temperature.
［従来の技術］
温度変化によって素子の電気抵抗が大きく変化する半導
体感温素子であるサーミスタが温度センサ等として広く
使用されている。[Prior Art] A thermistor, which is a semiconductor temperature-sensitive element whose electrical resistance changes greatly depending on temperature changes, is widely used as a temperature sensor or the like.
サーミスタには、温度が上昇するにつれて電気抵抗が指
数関数的に減少する負の温度特性を有するＮＴＣに対し
て、逆に非直線的に抵抗が著しく増加するＰＴＣ特性を
有する正特性サーミスタが知られている。NTC has negative temperature characteristics in which electrical resistance decreases exponentially as temperature rises, while positive thermistors have PTC characteristics in which resistance significantly increases non-linearly. ing.
負の温度特性を有するＮＴＣサーミスタは温度センサを
中心に広く利用されているが、正の温度特性を有するＰ
ＴＣサーミスタを、発熱させた場合には温度の上昇にと
もなって電気抵抗が増加すると通電電流が減少し、その
結果発熱量が減少するという自己温度制御機能を有して
いるために、温度ヤンサとして利用されるよりも、テレ
ビのブラウン管の消磁回路用やモータの起動回路用の無
接点電流制御素子として、ヘヤードライヤ、ふとん乾燥
詠 炊飯保温器 電気蚊取り器 複写機の温度保持用等
の自己温度制御発熱体として利用されている。NTC thermistors, which have negative temperature characteristics, are widely used mainly in temperature sensors, but NTC thermistors, which have positive temperature characteristics,
TC thermistors have a self-temperature control function in which when the electrical resistance increases as the temperature rises, the current flowing through them decreases, and as a result, the amount of heat generated decreases. Rather than being used, it is used as a non-contact current control element for the degaussing circuit of television cathode ray tubes and the starting circuit of motors, and for self-temperature control of hair dryers, futon dryers, rice cookers, electric mosquito repellents, copying machines, etc. It is used as a heating element.
ＰＴＣサーミスタはチタン酸バリウム又はチタン酸スト
ロンチウムなどの導電性を有しない酸化物に、これらの
酸化物を半導体化させるドープ剤としてイツトリウム、
ランタンなどの３価の希土類金属元素あるいはニオブ、
タンタルなどの５価の遷移金属元素を添加し大気中で１
，２００〜１゜４００℃で焼成することによって製造し
ているセラミックスであるが、強誘電体相から常誘電体
相へ変わるキュリー点温度付近で数十Ω・ａｍないし数
百Ω・ｃｍであった抵抗値が１０７Ω・ａｍないし１０
１＠Ω・Ｃｍへと急激に増加するいわゆるＰＴＣ特性を
示すが、抵抗の変化するキュリー点温度、抵抗増加の幅
等に関して使用目的に応じて各種の改良がなされている
。PTC thermistors are made by adding yttrium or yttrium to non-conductive oxides such as barium titanate or strontium titanate as dopants to convert these oxides into semiconductors.
Trivalent rare earth metal elements such as lanthanum or niobium,
1 in the atmosphere by adding pentavalent transition metal elements such as tantalum.
,200~1°C Ceramics are manufactured by firing at 400°C, but the resistance is several tens of Ω・am to several hundred Ω・cm near the Curie point temperature where the ferroelectric phase changes to the paraelectric phase. The resistance value is 107Ω・am or 10
It exhibits a so-called PTC characteristic that rapidly increases to 1@Ω·Cm, but various improvements have been made in terms of the Curie point temperature at which the resistance changes, the range of increase in resistance, etc. depending on the purpose of use.
［発明が解決しようとする課題］
現在、 ＰＴＣサーミスタは数多くの場所で使用されて
おり使用目的に応じて要求されるＰＴＣサーミスタの各
種の特性のうち、常温抵抗は、公称ゼロ負荷抵抗値とし
て電子材料工業会標準規格で定められている。公称ゼロ
負荷抵抗値は、ＰＴＣサーミスタの常温での１つの電気
特性を示す指標であって、発熱および印加電圧による抵
抗値変化が無視できるような十分低い電力および電圧で
測定した直流電気抵抗値である。[Problem to be solved by the invention] Currently, PTC thermistors are used in many places, and among the various characteristics of PTC thermistors required depending on the purpose of use, room temperature resistance is It is stipulated by the Materials Industry Association standards. The nominal zero-load resistance value is an index indicating one of the electrical characteristics of a PTC thermistor at room temperature, and is the DC electrical resistance value measured at sufficiently low power and voltage that resistance changes due to heat generation and applied voltage can be ignored. be.
また、公称ゼロ負荷抵抗値はその素子の半導体化の程度
を示すものであり、利用分野によっては低い値のものが
必要である。Further, the nominal zero-load resistance value indicates the degree of semiconductorization of the element, and a low value is required depending on the field of use.
ＰＴＣサーミスタで大電流を制御したり、発熱量の大き
な大型のヒータを製造するためには、大電流を流すこと
ができる常温抵抗の低い素子が必要とさね また、素子
の小型化のためにも同様に低抵抗化が望まれている。一
方、信頼性の向上のためには、低抵抗化に伴う耐電圧値
の低下も極力押える必要がある。In order to control large currents with PTC thermistors or to manufacture large heaters that generate a large amount of heat, an element with low room temperature resistance that can flow a large current is required.Also, in order to miniaturize the element Similarly, lower resistance is desired. On the other hand, in order to improve reliability, it is necessary to suppress the decrease in withstand voltage value as much as possible due to lower resistance.
耐電圧値はＰＴＣサーミスタの素子に電圧をかけてゆき
、素子が破壊するところの電圧値であるが、ＰＴＣサー
ミスタは通常電源電圧値で直接使用するために、日本で
は１００Ｖ以上の値が必要であり、欧米では２００Ｖの
以上の耐電圧値が必要となる。また、耐電圧値は、通常
公称ゼロ負荷抵抗値が低下するにつれて低くなる。The withstand voltage value is the voltage value at which the element breaks down when a voltage is applied to the element of the PTC thermistor, but since PTC thermistors are usually used directly at the power supply voltage value, a value of 100V or more is required in Japan. In Europe and America, a withstand voltage value of 200V or higher is required. Further, the withstand voltage value usually decreases as the nominal zero-load resistance value decreases.
本発明は、上記のような課題を解決するためにＰＴＣサ
ーミスタの基本的な特性に影響を及ぼす材料の基本成分
比を変えることなく、さらに微量の成分を添加すること
によって常温抵抗の低下を実現し、特性を向上させたも
のである。In order to solve the above problems, the present invention realizes a reduction in room temperature resistance by adding a small amount of ingredients without changing the basic component ratio of the material that affects the basic characteristics of the PTC thermistor. However, it has improved characteristics.
［課題を解決するための手段］
上記問題点を解決するために本発明のＰＴＣサーミスタ
は、バリウムの一部をストロンチウムで置換したチタン
酸バリウムの（Ｂａ、５ｒ）Ｔｉ０３組成物１モルに対
して半導体化剤として０゜００３モル以下の３価又は５
価の金属元素が添加されているＰＴＣサーミスタ原料に
更に０．００１モル以下の３価の希土類金属元素を添加
し混合、仮焼した後、その成形体を大気中１２００℃な
いし１４００℃で焼成することにより製造したものであ
る。[Means for Solving the Problems] In order to solve the above-mentioned problems, the PTC thermistor of the present invention has a composition of barium titanate (Ba, 5r) in which a part of barium is replaced with strontium per mole of (Ba, 5r) Ti03 composition. Trivalent or pentavalent 0°003 mol or less as a semiconducting agent
0.001 mol or less of a trivalent rare earth metal element is further added to the PTC thermistor raw material to which a valent metal element is added, mixed and calcined, and then the molded body is fired at 1200°C to 1400°C in the atmosphere. It was manufactured by
チタン酸バリウム系の組成物に添加する半導体化剤には
、イツトリウム（Ｙ）、セリウム（Ｃｅ）ランタン（Ｌ
ａ）などの３価の希土類金属元素、アンチモン（ｓｂ）
、ビスマス（Ｂｉ）などの３価の金属元素、あるいはニ
オブ（Ｎｂ）、タンタル（Ｔａ）、タングステン（Ｗ）
などの５価の金属元素が用いられる。Semiconducting agents added to barium titanate-based compositions include yttrium (Y), cerium (Ce), and lanthanum (L).
Trivalent rare earth metal elements such as a), antimony (sb)
, trivalent metal elements such as bismuth (Bi), or niobium (Nb), tantalum (Ta), and tungsten (W).
Pentavalent metal elements such as are used.
また、 ＰＴＣサーミスタの常温抵抗の低下に使用する
３価の希土類金属元素にはブラヤオジム（Ｐｒ）、サマ
リウム（Ｓｍ）、ガドリニウム（Ｇｄ）、エルビウム（
Ｅｒ）などがあるが、他の希土類元素もイオン半径の違
いのみで同様の挙動を示すので、他の希土類元素も同様
に利用することが可能である。In addition, trivalent rare earth metal elements used to lower the room temperature resistance of PTC thermistors include Brayaozym (Pr), samarium (Sm), gadolinium (Gd), and erbium (
However, since other rare earth elements exhibit similar behavior only with a difference in ionic radius, other rare earth elements can also be used in the same way.
［作用コ
本発明によるＰＴＣサーミスタは、ＰＴＣサーミスタ材
料の基本成分比を変えることなくその公称ゼロ負荷抵抗
値を０〜５％の範囲で自由に下げることができる。更に
抵抗値が減少することに伴う耐電圧の低下を極力押える
ことができる。[Function] The PTC thermistor according to the present invention can freely lower its nominal zero-load resistance value within the range of 0 to 5% without changing the basic component ratio of the PTC thermistor material. Furthermore, a decrease in withstand voltage due to a decrease in resistance value can be suppressed as much as possible.
［実施例］ 以下、本発明の実施例について説明する。[Example] Examples of the present invention will be described below.
実施例
（Ｂ ａ ｓ、ａ＊ｓ ｒ ｓ、２＠） Ｔ ｉ ０１
，１＋０３ ＋ ０． ００１５ Ｄ １２０ｓの組成
になるように基本成分を配合した後、３価の希土類金属
元素プラセオジム（Ｐｒ）、サマリウム（Ｓｍ）、ガド
リニウム（Ｇｄ）又はエルビウム（Ｅｒ）を第１表に示
す量を基本成分１モに対して添加する。添加する希土類
金属元素は酸化物Ｍ２Ｏ３の形のものを使用した。Example (B a s, a*s r s, 2@) T i 01
,1+03+0. 0015 D After blending the basic ingredients to have a composition of 120s, add the trivalent rare earth metal elements praseodymium (Pr), samarium (Sm), gadolinium (Gd), or erbium (Er) in the amounts shown in Table 1. Add to 1 mo of ingredients. The rare earth metal element added was in the form of oxide M2O3.
添加の後に湿式混練し、乾燥後１０５０〜１１５０℃で
仮焼を行う。次に、この仮焼粉１モルに対し二酸化マン
ガン（Ｍ ｎ Ｏ２）を０．０００７モル、二酸化ケイ
素（Ｓｉｎ２）を０．０１５０モル、酸化７’ンチモン
（Ｓ ｂｚｏｓ） ’ｒ”ｏ、 ０００５モ＃を添加
した後ボールミルにより混合粉砕を行う。After addition, wet kneading is performed, and after drying, calcining is performed at 1050 to 1150°C. Next, for 1 mol of this calcined powder, 0.0007 mol of manganese dioxide (MnO2), 0.0150 mol of silicon dioxide (Sin2), and 0.005 mol of manganese dioxide (Sbzos) were added. After adding #, mixed and pulverized using a ball mill.
更に、 １５ ｗ ｔ％のポリビニルアルコールを原料
に対して１０ｗｔ％添加して造粒し直径２０ｍｍ、厚さ
３．０ｍｍの円板状に１，０００ｋｇ／Ｃｍ２の圧力で
成形した後ニ１． ３００〜１． ３５０℃で２時間焼
成する。得られた焼結体にはオーミック性銀電極の端子
を接合して、ＰＴＣサーミスタを製造した
得られたＰＴＣサーミスタを２５℃に保たれた恒温槽中
で素・子にＩ■の電圧を印加して直流抵抗値を測定した
ところところ、第１表に示すような結果が得られ旭
［以下余白コ
第１表
比較例
常温抵抗を減少させるための希土類金属元素を添加しな
い点を除いては、実施例と同様の条件でＰＴＣサーミス
タを製造し、実施例において使用シタ方法と同一の方法
で電気抵抗を測定したところ、 ２０Ω・ｃｍであっ旭
第１表に、希土類金属外元素の添加量と抵抗値の減少率
を示すように、いずれの希土類金属元素の添加量が基本
成分１モルに対して０．００１５モル以上となると半導
体化が認められなくなることが示されており、それ以下
の添加量であれば抵抗値の減少率は０〜５％程度認めら
れる。Furthermore, 15 wt% of polyvinyl alcohol was added to the raw material in an amount of 10 wt%, granulated, and molded into a disk shape with a diameter of 20 mm and a thickness of 3.0 mm at a pressure of 1,000 kg/cm2. 300-1. Bake at 350°C for 2 hours. A PTC thermistor was manufactured by bonding an ohmic silver electrode terminal to the obtained sintered body. A voltage of I was applied to the obtained PTC thermistor in a constant temperature oven kept at 25°C. When we measured the DC resistance value, we obtained the results shown in Table 1. When a PTC thermistor was manufactured under the same conditions as in the example and the electrical resistance was measured using the same method as used in the example, it was found to be 20Ω・cm. As shown by the rate of decrease in resistance value, it has been shown that when the amount of any rare earth metal element added is 0.0015 mol or more per 1 mol of the basic component, no semiconductor formation is observed; If the amount is added, a reduction rate of resistance value of about 0 to 5% can be observed.
一方、抵抗値の減少に伴うＰＴＣ特性への影響について
は、抵抗温度係数、抵抗変化率には変化は認められなか
っ旭 まだ、耐電圧については最大３％程度の低下が認
められた程度で特性に悪影響を及ぼすような顕著な変化
は認められなかった。On the other hand, regarding the effect on PTC characteristics due to a decrease in resistance value, no change was observed in the temperature coefficient of resistance or rate of change in resistance. No significant changes were observed that would adversely affect the results.
［発明の効果コ
本発明の、正特性サーミスタは、半導体化剤の添加され
た（Ｂａ、５ｒ）Ｔｉ０３に更に少量の３価の希土類の
金属元素を添加し焼結することにより、正特性サーミス
タの基本的な特性に影響を及ぼす基本成分を変更するこ
となく、常温電気抵抗を減少させることができる。[Effects of the Invention] The positive temperature thermistor of the present invention is produced by adding a small amount of trivalent rare earth metal element to (Ba, 5r)Ti03 to which a semiconducting agent has been added and sintering it. The room-temperature electrical resistance can be reduced without changing the basic components that affect the basic properties of the material.
Claims (3)
ン酸バリウムの組成物１モルに対し、半導体化剤として
０．００３モル以下の３価又は５価の遷移金属元素を添
加した正特性サーミスタ原料の１モルに対して０．００
１モル以下の３価の希土類金属元素を添加したことを特
徴とする正特性サーミスタ。(1) A positive temperature coefficient thermistor raw material in which 0.003 mol or less of a trivalent or pentavalent transition metal element is added as a semiconductor agent to 1 mol of a barium titanate composition in which a part of barium is replaced with strontium. 0.00 per mole
A positive characteristic thermistor characterized in that 1 mole or less of a trivalent rare earth metal element is added.
サマリウム（Ｓｍ）、ガドリニウム（Ｇｄ）、エルビウ
ム（Ｅｒ）から選ばれることを特徴とする請求項１記載
の正特性サーミスタ。(2) The trivalent rare earth metal element is praseodymium (Pr),
The positive temperature coefficient thermistor according to claim 1, characterized in that the positive temperature coefficient thermistor is selected from samarium (Sm), gadolinium (Gd), and erbium (Er).
ン酸バリウムの組成物１モルに対し、半導体化剤として
０．００３モル以下の３価又は５価の遷移金属元素を添
加した正特性サーミスタ原料の１モルに対して０．００
１モル以下の３価の希土類金属元素を添加して１２００
℃以上の温度で焼結することを特徴とする正特性サーミ
スタの製造方法。(3) A positive temperature coefficient thermistor raw material in which 0.003 mol or less of a trivalent or pentavalent transition metal element is added as a semiconductor agent to 1 mol of a barium titanate composition in which a part of barium is replaced with strontium. 0.00 per mole
1200 by adding 1 mol or less of a trivalent rare earth metal element
A method for manufacturing a positive characteristic thermistor characterized by sintering at a temperature of ℃ or higher.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2268108A JPH04144201A (en) | 1990-10-05 | 1990-10-05 | Positive temperature coefficient thermistor and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2268108A JPH04144201A (en) | 1990-10-05 | 1990-10-05 | Positive temperature coefficient thermistor and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04144201A true JPH04144201A (en) | 1992-05-18 |
Family
ID=17454009
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2268108A Pending JPH04144201A (en) | 1990-10-05 | 1990-10-05 | Positive temperature coefficient thermistor and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04144201A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0655752A2 (en) * | 1993-11-25 | 1995-05-31 | NGK Spark Plug Co. Ltd. | Ceramic composition and thermistor comprising such ceramic composition |
| JP2010254536A (en) * | 2009-04-28 | 2010-11-11 | Nichicon Corp | Positive characteristic thermistor ceramic composition |
| JP2016027839A (en) * | 2014-07-11 | 2016-02-25 | サンメディカル株式会社 | Medical heating device |
-
1990
- 1990-10-05 JP JP2268108A patent/JPH04144201A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0655752A2 (en) * | 1993-11-25 | 1995-05-31 | NGK Spark Plug Co. Ltd. | Ceramic composition and thermistor comprising such ceramic composition |
| EP0655752A3 (en) * | 1993-11-25 | 1996-05-01 | Ngk Spark Plug Co | Ceramic composition and thermistor comprising such ceramic compositon. |
| JP2010254536A (en) * | 2009-04-28 | 2010-11-11 | Nichicon Corp | Positive characteristic thermistor ceramic composition |
| JP2016027839A (en) * | 2014-07-11 | 2016-02-25 | サンメディカル株式会社 | Medical heating device |
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