JPH0644536A - Magneto-resistance effect element and its production - Google Patents

Abstract

PURPOSE:To improve the characteristics of the magneto-resistance effect element having a magnetosensitive part consisting of fine patterns (<=several tenmum) and to shorten the size of the element by obtaining a ground surface substrate which warps less, has a smooth surface and is exact and small in the pitch of conductor electrodes and using this substrate. CONSTITUTION:The substrate consisting of an insulating layer 1 consisting of ceramics or glass which can be fired at <=1000 deg.C or a compsn. composed of the glass and the ceramics and a conductor metallized layer 3 formed on this insulating layer 1 is used. As a result, the smoothness and warpage of the surface of the insulating layer are decreased and the exactness and reduction of the pitch of the conductor electrodes are attained. The magnetosensitive part consisting of the fine (<=several tenmum) patterns free from the variation in shape is obtd., by which the characteristics are improved and the element is miniaturized.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetoresistive effect element and its manufacturing method.

[0002]

2. Description of the Related Art In recent years, in order to improve detection sensitivity and accuracy, magnetoresistive effect elements are required to have a smooth element surface so that the element surface can be placed in parallel with and closest to an object to be detected. There is. In addition, the surface of the base substrate is required to be smooth due to problems in the characteristics of the thin film element. Therefore, conventionally, as shown in FIGS. 5 and 6, a glass glaze 12 having excellent surface smoothness is provided on the alumina substrate 1, and
Electrodes 14 connecting the front and back are provided at the corners of the substrate, and a magnetic sensitive pattern 15 made of a ferromagnetic material is provided on the glass glaze 12.
Was connected to the electrode 14 and the terminal was taken out from the back electrode.

In addition, after the glass paste is screen-printed on the entire surface other than the through holes and lands of the alumina substrate having the V grooves at the chip size intervals on the back surface and the through holes at the intersections of the V grooves, the manufacturing method is as follows. After baking, silver-palladium paste for electrodes is screen-printed on the land and through holes, and then baked, and then a ferromagnetic material such as permalloy is vapor-deposited on the entire glaze side, followed by resist coating, exposure, development, etching, and resist stripping. After obtaining a magneto-sensitive pattern of a desired shape in contact with the electrode, the terminal was taken out from the back surface electrode by dividing it.

[0004]

However, in the above structure, the glass on the alumina substrate has an alkali-free high transition point containing silicon oxide, aluminum oxide, barium oxide, calcium oxide or the like as a main component. hand,
Since it burns at a high temperature of about 1100 to 1200 ° C,
The obtained substrate (hereinafter, such a structure is referred to as a glaze alumina substrate) is warped by about 100 μm per 2 inches, and the entire surface is exposed at one time by using the proximity aligner to focus on the substrate center. In this case, the shape of the formed pattern is separated from that of the mask as it is separated from the center of the substrate, which causes a problem that the distribution of the resistance value of the product after division becomes large.
In addition, a through hole electrode is formed by screen printing on the substrate where there is a variation in pitch between through holes caused by a difference in contraction rate during alumina firing to obtain conduction between the front and back sides, and the through hole is divided into four to divide each element into four elements. Since the method of using electrodes is adopted, the reduction of the element size depends on the processing accuracy of the alumina substrate and the through-hole electrode, and the problem that it has already reached its limit and only four or fewer terminals can be obtained. There was a problem that I could not do it.

In view of the above problems, the present invention has a small warp,
And the surface is smooth, the pitch of the conductor electrodes is accurate and small, and there are a number of underlying substrates more than the conventional one, and the thin film has a magnetic sensitive portion without fine shape variation, and is small in size. A porcelain resistance effect element having an unlimited number of terminals and a method for manufacturing the same.

[0006]

In order to achieve the above object, the magnetoresistive effect element of the present invention comprises an insulating layer made of ceramic or glass or glass and a ceramic composition, and connecting the front and back surfaces inside the insulating layer. The conductor metallized layer embedded as described above, and the magnetic sensitive portion formed of a ferromagnetic thin film of a predetermined shape connected to the exposed portion of the conductor metallized layer and formed on the insulating layer. is there.

The manufacturing method of the present invention is 800 to 10
After preparing a raw sheet made of ceramic or glass that can be fired at 00 ° C., or raw material powder of glass and ceramics, a binder and a plasticizer, a through hole is opened in the raw sheet, and a conductive paste is filled in the through hole. , A step of baking at a high temperature, a step of forming a thin film of a ferromagnetic material on one surface of the obtained substrate, and forming a magnetically sensitive portion of a predetermined shape by contact with a conductor on the front surface of the substrate, And a step of taking out the terminal from the conductor.

[0008]

According to this structure, a warp is small, the surface is smooth, the pitch of the conductor electrodes is accurate and small, and there are a number of base substrates more than the conventional one. Therefore, it is possible to eliminate the exposure variation of the pattern due to the warp of the substrate, which has been a problem in the past, and to improve the processing accuracy of the substrate and the electrode to reduce the size of the element. Therefore, the number of terminals can be increased.

[0009]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A magnetoresistive effect element according to an embodiment of the present invention and a method of manufacturing the same will be described below with reference to the drawings. FIG. 1 is a sectional view of a magnetoresistive effect element according to an embodiment of the present invention, and FIG. 2 is a top view.

In FIG. 1, 1 is an insulating layer made of ceramic or glass or a composition of glass and ceramic, 2 is a ferromagnetic thin film, 3 is a conductor metallized layer,
In FIG. 2, 4 is a current supply terminal (+), 5 is GND,
Reference numerals 6 and 7 are output terminals.

The magnetoresistive element according to one embodiment of the present invention is
An insulating layer 1 made of a composition containing borosilicate glass and alumina as a main component, and embedded inside the insulating layer 1 so as to connect the front and back surfaces, for example, a silver: palladium ratio of 15:
85 conductor metallization layer 3 and this conductor metallization layer 3
A thin film of ferromagnetic material film 2 connected to the exposed portion of the surface of the insulating layer 1 and having a thickness of 0.1 μm and a width of 10 μm formed on the insulating layer 1 in the shape of folded stripes 2
It consists of and. The surface roughness of the insulating layer 1 is 0.20
It is below μmRa.

FIGS. 3 and 4 are views showing another embodiment of the present invention. In the embodiment shown in FIG. 3, the conductor metallization layer 3 is internally provided so as to be substantially parallel to the surface of the insulating layer 1. The inner layer 3a is provided, and a plurality of connecting portions 3b are provided from the inner layer 3a provided therein to the front surface and the back surface of the insulating layer 1, and in the embodiment shown in FIG. The glass layer 8 is provided on the glass layer 8 and the ferromagnetic thin film 2 is formed on the glass layer 8.
Is formed.

Next, a specific example of the present invention will be described.
Borosilicate glass powder and alumina powder in a weight ratio of 60: 4
100 parts by weight of polyvinyl butyral as an organic binder, cibutyl phthalate (DBP) as a plasticizer, and a mixed solution of toluene and ethanol (60:40 ratio) as a solvent, 100 parts of an inorganic component, polyvinyl butyral 5 parts, dibutyl phthalate (DBP) 10
Parts, toluene and ethanol at a ratio of 30 parts, were wet-pulverized to form a slurry, and bubbles were removed from the slurry by vacuum deaeration treatment to adjust the viscosity. The slurry was coated on a polyester support using a doctor blade and dried through an oven to prepare a green sheet having a thickness of 0.5 mm. While removing the green sheet from the support, the through hole is formed by punching to form a through hole. For example, a conductor paste having a ratio of palladium to silver of 15:85 is filled in the through hole and dried,
The temperature was raised at a rate of 400 ° C./h, the temperature was kept at 900 ° C. for 1 hour, and then the sheet was taken out at room temperature. The obtained substrate was placed in a vacuum vapor deposition machine, evacuated to a predetermined degree of vacuum, and then permalloy was vapor-deposited to a thickness of 0.1 μm. After resist coating, exposure, development, etching, and resist stripping, the width was 10 μm. To obtain a magnetic sensitive pattern having a shape in which stripes were folded back. After dicing to the element size (for example, 2 × 2 mm), a wire was attached to the back surface electrode.

The warp of the obtained substrate was 50 μm or less. Further, the element size obtained this time has not been obtained in the conventional example. Although the number of terminals is four this time, the number of independent magnetic sensitive parts can be increased and the number of terminals can be increased to five or more.

The resistance value of the magnetoresistive effect element having the above-described structure was compared with that of the conventional magnetoresistive effect element. The resistance value was measured between 5 and 6 (see FIG. 2). The results are shown in (Table 1).

As is clear from Table 1, the magnetoresistive effect element of the present invention has a smaller variation in resistance value than the conventional magnetoresistive effect element.

As described above, according to this embodiment, it is possible to improve the characteristics, reduce the element size, and increase the number of terminals.

[0018]

[Table 1]

[0019]

As described above, according to the present invention, 1000
By obtaining a substrate composed of a ceramic or glass that can be fired at ℃ or below, or an insulating layer composed of glass and a ceramic composition, and a conductor metallized layer formed on the insulating layer, smoothness and warpage of the surface of the insulating layer can be obtained. Since it has a magnetic sensitive part consisting of a fine (several + μm or less) thin film pattern with no shape variation due to reduction, the characteristics are improved, and the element size is reduced by making the electrode conductor forming method easy and highly accurate, The number of terminals can be increased.

[Brief description of drawings]

FIG. 1 is a sectional view of a magnetoresistive effect element according to an embodiment of the present invention.

FIG. 2 is a top view of the magnetoresistive effect element.

FIG. 3 is a sectional view of a magnetoresistive effect element according to another embodiment of the present invention.

FIG. 4 is a sectional view of a magnetoresistive effect element according to another embodiment of the present invention.

FIG. 5 is a sectional view of a conventional magnetoresistive effect element.

FIG. 6 is a top view of a conventional magnetoresistive effect element.

[Explanation of symbols]

 1 Insulating layer 2 Ferromagnetic thin film 3 Conductor metallized layer

Claims (2)

[Claims] 1. An insulating layer made of ceramic or glass or a composition of glass and ceramic, a conductor metallization layer embedded inside the insulating layer so as to connect front and back surfaces, and exposed on the surface of the conductor metallization layer. A magnetoresistive effect element composed of a magnetic sensitive portion formed of a ferromagnetic thin film having a predetermined shape, which is connected to the above portion and is formed on an insulating layer. 2. A raw sheet made of ceramic or glass that can be fired at 800 to 1000 ° C., or raw material powder of glass and ceramics, a binder and a plasticizer is prepared, and a through hole is opened in the raw sheet to form the through hole. After the conductive paste is filled in, a step of baking at a high temperature and a step of forming a thin film of a ferromagnetic material on one surface of the obtained substrate and forming a magnetically sensitive portion of a predetermined shape in contact with a conductor on the surface of the substrate And a step of taking out a terminal from the conductor on the back surface of the substrate, the method for manufacturing a magnetoresistive element.