JPH064304Y2 - 静電容量形半導体圧力センサ - Google Patents
静電容量形半導体圧力センサInfo
- Publication number
- JPH064304Y2 JPH064304Y2 JP1987125054U JP12505487U JPH064304Y2 JP H064304 Y2 JPH064304 Y2 JP H064304Y2 JP 1987125054 U JP1987125054 U JP 1987125054U JP 12505487 U JP12505487 U JP 12505487U JP H064304 Y2 JPH064304 Y2 JP H064304Y2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- type
- layer
- type semiconductor
- epitaxial growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims description 31
- 239000000758 substrate Substances 0.000 claims description 29
- 238000004891 communication Methods 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 5
- 239000011810 insulating material Substances 0.000 claims description 4
- 238000005259 measurement Methods 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Landscapes
- Measuring Fluid Pressure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987125054U JPH064304Y2 (ja) | 1987-08-17 | 1987-08-17 | 静電容量形半導体圧力センサ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987125054U JPH064304Y2 (ja) | 1987-08-17 | 1987-08-17 | 静電容量形半導体圧力センサ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6430423U JPS6430423U (enrdf_load_stackoverflow) | 1989-02-23 |
| JPH064304Y2 true JPH064304Y2 (ja) | 1994-02-02 |
Family
ID=31375319
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1987125054U Expired - Lifetime JPH064304Y2 (ja) | 1987-08-17 | 1987-08-17 | 静電容量形半導体圧力センサ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH064304Y2 (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4639487B2 (ja) * | 2001-02-13 | 2011-02-23 | 株式会社デンソー | 薄膜部を有するセンサの製造方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4332000A (en) * | 1980-10-03 | 1982-05-25 | International Business Machines Corporation | Capacitive pressure transducer |
| JPS60138434A (ja) * | 1983-12-27 | 1985-07-23 | Fuji Electric Co Ltd | 半導体形静電容量式圧力センサの製造方法 |
-
1987
- 1987-08-17 JP JP1987125054U patent/JPH064304Y2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6430423U (enrdf_load_stackoverflow) | 1989-02-23 |
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