JPH06338493A - Spattering device - Google Patents

Abstract

PURPOSE:To simplify a driving mechanism of a shutter and a conductance value in a sputtering device for preventing trouble of the driving mechanism, mixture of foreign matter and vacuum leak. CONSTITUTION:A shutter 1c is positioned between a ware holder 1a and an earth shield 1b for becoming a closed state. When a sputtering is started, the shutter 1c is rotated by a rotary motor 6 for being moved up to the top of an exhaust hole 1e. For reducing occulusion of argon gas inside a treatment chamber 1 by a vacuum pump 3, the shutter 1c on the exhaust hole 1e is moved by an up and down motor 7 so as to control an argon gas quantity. Further, this shutter 1c also becomes a heat shielding plate tp protect the vacuum pump 3 from high heat at the time of sputtering by moving to the top of the exhaust hole 1e.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vacuum evaporation system,
In particular, the present invention relates to a technique effectively applied to a sputtering device having a shutter and a conductance valve.

[0002]

2. Description of the Related Art In a sputtering apparatus, a shutter provided in a processing chamber is used at the time of pre-sputtering for removing a contaminated layer on a target surface and stabilizing sputtering, which is performed before forming a thin film on a semiconductor wafer. It is closed and this shutter prevents the film from adhering to the semiconductor wafer.

At the time of sputtering for forming a thin film on a semiconductor wafer, the shutter is opened to form the thin film.

Further, argon gas or the like is introduced into the processing chamber as a discharge gas, and in order to reduce suction of the argon gas or the like by the vacuum pump, in addition to the shutter opening / closing mechanism, the vacuum pump is evacuated. A conductance valve is provided to control the quantity.

Further, at the time of sputtering, a plate-shaped collimator provided with a large number of holes such as a honeycomb shape for improving the vertical ejection of target atoms in order to improve the step coverage in a contact hole or the like on a semiconductor wafer is targeted. And the semiconductor wafer.

[0006]

However, in the case of this sputtering apparatus, the shutter and the conductance valve must be operated for each sputtering, and the mechanical parts such as the shutter and the conductance valve must be operated for frequent operation. There is a risk of malfunction, foreign matter entering the processing chamber, and vacuum leak. Also, when the collimator is provided in the processing chamber, the collimator must be attached to the collimator installation location manually by the operator.

Further, in order to determine the mounting position of the collimator having the best step coverage, the mounting position of the collimator must be changed many times, and the processing chamber must be returned from the vacuum to the atmosphere every time the position is changed. Since this does not occur, the number of working steps increases, and there is a risk of foreign matter and the like leaking into the processing chamber and vacuum leakage.

An object of the present invention is to provide a sputtering apparatus which simplifies the drive mechanism for the shutter, conductance valve and collimator, and prevents the drive mechanism from malfunctioning, foreign matter from entering, vacuum leak and the like.

The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

[0010]

Among the inventions disclosed in the present application, a brief description will be given to the outline of typical ones.
It is as follows.

That is, a shutter for preventing a film from adhering to a semiconductor wafer during pre-sputtering, a rotating means for rotating the shutter with a point on the outer peripheral surface of the shutter as a fulcrum, and a vertical moving means for vertically moving the shutter. And means for moving.

Further, during sputtering, the shutter is moved by a rotating means to an exhaust port for evacuation provided in a processing chamber of the sputtering apparatus, and an up-and-down moving means moves the vicinity of the exhaust port up and down to exhaust gas. The resistance is changed to control the exhaust amount.

Further, the shutter moves up and down in the vicinity of the exhaust port by the up-and-down moving means to serve as heat shielding means for protecting the vacuum pump from high heat during sputtering.

Further, a shutter for preventing a film from adhering to the semiconductor wafer during pre-sputtering and a plate-like collimator provided with a large number of holes for improving vertical ejection of target atoms are provided. Adjacent to each other, a rotating means for interlockingly rotating the shutter and the collimator with one point on the outer peripheral surface of the shutter and the collimator as a fulcrum, and a vertically moving means for vertically moving the shutter and the collimator are provided. Is.

Further, during sputtering, the collimator is moved between the target and the semiconductor wafer in the processing chamber of the sputtering apparatus by the rotating means, and is moved up and down by the up-and-down moving means to control the vertical ejection amount of the target atoms. To do.

[0016]

According to the sputtering apparatus having the above-mentioned structure, the drive mechanism for the conductance valve is not required and only the drive mechanism for the shutter is required, so that the drive mechanism can be simplified.

Further, by doing so, it is possible to reduce troubles in the operating part such as the conductance valve, contamination of foreign substances into the processing chamber, and vacuum leakage.

Further, the shutter can protect the vacuum pump from high heat during sputtering as a heat shield means.

Further, the collimator does not have to be manually attached by the operator, and the collimator can be moved even if the processing chamber is in a vacuum, so that the workability is improved, and contamination of foreign matter and vacuum leak are reduced. be able to.

[0020]

EXAMPLES Examples of the present invention will be described in detail below.

(Embodiment 1) FIG. 1 is a sectional view of a processing chamber portion of a sputtering apparatus according to Embodiment 1 of the present invention.

In the first embodiment, a wafer holder 1a for fixing the semiconductor wafer 2 is arranged in the lower part of the processing chamber 1 which is a sputtering device, and in the upper part thereof,
A target (not shown) which is disposed on the surface of the cathode and is a substance which becomes a film by ion bombardment, and an earth shield 1b which serves as a counter electrode of the target are disposed.

Further, a conductance valve (control means) is provided in the center of the processing chamber 1 to prevent a film from being deposited on the semiconductor wafer during pre-sputtering and to control the exhaust amount in the processing chamber 1. A shutter 1c serving as a heat shield plate (heat shield means) for protecting the vacuum pump 3 from heat generated during sputtering is provided.

The shutter 1c has a driving shaft 1 for driving the shutter 1c with one point on the outer peripheral surface of the shutter 1c as a fulcrum.
It is attached to d.

Next, the drive shaft 1d is sealed by a bellows 4 which is a vacuum seal for vertical movement and a magnetic seal 5 which is a vacuum seal for rotational movement, and is disposed outside the processing chamber 1. Rotation motor (rotation means) that is a mechanism
6 and an up-down motor (up-down moving means) 7 are connected to perform up-down movement and rotational movement.

An exhaust port 1e for evacuating the inside of the processing chamber 1 by a vacuum pump 3 is provided in the lower portion of the processing chamber 1 opposite to the wafer holder 1a.

Next, the operation of this embodiment will be described.

At the time of pre-sputtering, the shutter 1c in the processing chamber 1 is moved between the wafer holder 1a and the earth shield 1b so that the shutter 1c is closed.

After the pre-sputtering and at the start of the sputtering, the drive shaft 1d is driven by the rotary motor 6.
The shutter 1c is rotated by rotating the shutter 1c so that the shutter 1c is opened. The shutter 1c in the opened state is further rotated by the rotation motor 6 and moved to above the exhaust port 1e.

At this time, in order to reduce the suction of argon gas or the like by the vacuum pump 3, the shutter 1c on the exhaust port 1e is moved up and down by the vertical motor 7 to change the exhaust resistance, and the exhaust port 1e is changed. Controls the amount of argon gas exhausted.

The shutter 1c also functions as a heat shield plate that protects the vacuum pump 3 from high heat during sputtering by moving above the exhaust port 1e.

As a result, in the first embodiment, the shutter 1c also serves as a conductance valve and a heat shield plate, so that the drive mechanism is simplified, and the mechanical operation of the drive mechanism is reduced. It is possible to reduce the contamination and the vacuum leak.

(Embodiment 2) FIG. 2 is a sectional view of a processing chamber portion of a sputtering apparatus according to Embodiment 2 of the present invention.

In the second embodiment, the shutter 1c is provided with a large number of holes 1f in order to improve the vertical ejection of target atoms to the drive shaft 1d mounted with one point on the outer peripheral surface of the shutter 1c as a fulcrum. The plate-like collimator 1g provided with is attached with one point on the outer peripheral surface of the collimator 1g as a fulcrum.

As a result, during pre-sputtering, the shutter 1c is moved between the wafer holder 1a and the earth shield 1b, and the shutter 1c is in a closed state. Next, the rotary motor 6 drives the drive shaft 1d.
When the shutter 1c is opened and sputtering is started by rotating, the drive shaft 1d is further rotated by the rotation motor 6 to move the collimator 1g between the wafer holder 1a and the earth shield 1b.

The drive shaft 1 is driven by the vertical motor 7.
By moving d up and down, the distance between the collimator 1g and the target on the earth shield 1b is changed, and the vertical ejection amount of the target atoms is controlled to perform sputtering at the position where the step coverage is optimum.

As a result, in the second embodiment, since the drive mechanism of the shutter 1c and the collimator 1g are operated by the same drive mechanism, the operation mechanism is simplified.

Further, the collimator 1g does not need to be manually attached by an operator, and even if the processing chamber 1 is in a vacuum, the collimator 1g can be moved, so that workability is improved and foreign matter is mixed in or vacuum leak occurs. As described above, the invention made by the present inventor has been described based on the embodiments. However, the present invention is not limited to the embodiments and various modifications can be made without departing from the scope of the invention. Needless to say.

[0039]

Of the inventions disclosed by the present invention,
The following is a brief description of the effects obtained by the typical ones.

(1) According to the present invention, since the shutter also serves as the heat shield plate and the conductance valve, the shutter drive mechanism can be simplified, and the mechanical operation of the drive mechanism is reduced.

(2) Since the position of the collimator can be changed while the processing chamber is evacuated, the number of working steps can be reduced.

(3) Further, by the above (1) and (2), it is possible to reduce the failure of the driving mechanism of the sputtering apparatus, the mixing of foreign matters, the vacuum leak and the like.

[Brief description of drawings]

FIG. 1 is a sectional view of a processing chamber portion of a sputtering apparatus according to a first embodiment of the present invention.

FIG. 2 is a sectional view of a processing chamber portion of a sputtering apparatus according to a second embodiment of the present invention.

[Explanation of symbols]

 1 Processing Chamber 1a Wafer Holder 1b Earth Shield 1c Shutter (Control Means, Heat Shielding Means) 1d Driving Shaft 1e Exhaust Port 1f Hole 1g Collimator 2 Semiconductor Wafer 3 Vacuum Pump 4 Bellows 5 Magnetic Seal 6 Rotation Motor (Rotating Means) 7 Up and Down Motor (up and down moving means)

Claims (5)

[Claims] 1. A shutter for preventing a film from adhering to a semiconductor wafer during pre-sputtering, a rotating means for rotating the shutter with a point on the outer peripheral surface of the shutter as a fulcrum, and the shutter for moving up and down. A sputtering apparatus comprising: an up-and-down moving means for moving. 2. At the time of sputtering, the shutter is moved by the rotating means to an exhaust port for evacuation provided in the processing chamber of the sputtering apparatus, and the vertically moving means moves the shutter up and down in the vicinity of the exhaust port. The sputtering apparatus according to claim 1, wherein the sputtering apparatus serves as a control unit that changes the exhaust resistance by being moved and controls the exhaust amount. 3. The heat shield means for protecting the vacuum pump from heat during sputtering by moving the shutter up and down in the vicinity of the exhaust port by the up and down moving means. Item 2. The sputtering apparatus according to item 2. 4. A shutter for preventing a film from adhering to a semiconductor wafer during pre-sputtering, and a plate-shaped collimator having a large number of holes for improving vertical ejection of target atoms. Rotating means arranged adjacent to each other and rotating the shutter and the collimator in conjunction with each other with one point on the outer peripheral surface of the shutter and the collimator as a fulcrum, and vertically moving the shutter and the collimator up and down. And a means for sputtering. 5. At the time of sputtering, the collimator is moved by the rotating means between the target in the processing chamber of the sputtering apparatus and the semiconductor wafer,
By moving up and down by the up and down moving means,
The sputtering apparatus according to claim 4, wherein the amount of the target atoms ejected in the vertical direction is controlled.