JPH06317810A - Matrix wiring board - Google Patents

Abstract

PURPOSE:To inspect the electrical characteristic while the ends of a matrix wiring are connected with a low-resistance wiring and to prevent the trouble such as the dielectric breakdown and the deterioration of an active device by arranging an appropriate element in the mid-way of the low-resistance wiring connecting the matrix wirings. CONSTITUTION:A TFT is formed at a cross between a gate signal wiring 101 and a source signal wiring 102. Inspection electrode terminals 103a and 113a on the gate side, inspection electrode terminals 104a and 114a on the source side and the low-resistance wirings (short ring) 105a and 105b and a transistor 106 for short-circuiting one ends of all the source signal wirings and one ends of all the gate signal wirings are provided. The source 106a and drain 106b of the transistor 106 are connected respectively to the low-resistance wirings 105b and 105a, the gate 106c is connected to one electrode of a switching capacity 107 with the other electrode grounded, and an electrode terminal 108 is connected to the node to charge the capacity 107.

Description

Detailed Description of the Invention

[0001]

FIELD OF THE INVENTION The present invention relates to a matrix wiring board. More specifically, the present invention relates to a matrix wiring board including a plurality of wiring groups having intersecting portions on an insulating board.

[0002]

2. Description of the Related Art Matrix wiring is often used for electronic devices in which elements are arranged on a plane, for example, image sensors for cameras using charge-coupled elements and substrates for active matrix type liquid crystal display panels.
Consider a wiring group of wirings that do not electrically intersect with each other in a matrix wiring formed on a plane. Here, consider a matrix wiring including two wiring groups, that is, a first wiring group and a second wiring group. The intersection of the first wiring group and the second wiring group is formed with an insulating film interposed. Further, in the above-mentioned substrate for the image sensor or the active matrix type liquid crystal display panel, a charge coupled device or a thin film transistor (hereinafter referred to as TF) is provided at this intersection.
Active device such as T) is formed,
The specific wiring forming the wiring group and the specific wiring forming the second wiring group are connected to each other via the active device at the intersection. These active devices exhibit a predetermined function, for example, a function as a switch in the case of a TFT, in accordance with an electric signal supplied from the wires of the first wiring group or the second wiring group. If no signal is input, it is electrically isolated. Therefore, the first wiring group and the second wiring group are electrically insulated from each other, and when static electricity is applied between the wiring groups, an overvoltage is generated in the active devices formed between the wirings at the intersections or at the intersections. When applied, a failure such as dielectric breakdown or characteristic deterioration of the active device occurs.
In order to solve this problem, all the wirings of the first wiring group and the second wiring group are connected by a conductor of low resistance,
A method is used to prevent an overvoltage from being applied to the active devices formed between the wirings at the intersections or at the intersections. According to this method, the outer peripheral portion of the matrix wiring is short-circuited by the ring-shaped low resistance wiring called a short ring.

FIG. 52 is an explanatory view showing a matrix wiring substrate having a conventional short ring described in, for example, Japanese Patent Application Laid-Open No. 2-251931. In FIG. 52, 701 is a short ring, 708 is a wiring that constitutes the first wiring group,
In this case, the source signal line, 709 is a wiring forming the second wiring group, in this case, the gate signal line, 702 is the inspection electrode terminals formed at both ends of the source signal line 708 and the gate signal line 709, and 703 is A terminal electrode for connecting to the source signal line driving IC (hereinafter referred to as a source IC connecting electrode), 704 a terminal electrode for connecting to the gate signal line driving IC (hereinafter referred to as a gate IC connecting electrode), e ₁ ~ E ₃₀ , f ₁ ~ f
Reference numeral ₂₀ is a cut portion between the short ring 701 and each signal wiring.

As is apparent from FIG. 52, in the conventional matrix wiring substrate having a short ring, the short ring 701 and the gate IC connecting electrode 704 and the short ring 701 and the source IC connecting electrode 703 are short-circuited. And all wiring is short-circuited. Further, cut portions e ₁ ..., f ₁ ... For cutting with a laser beam or the like are formed in the short-circuit portion. Note that the TFT as a switching element in FIG. 52 is formed at the intersection of the source signal line 708 and the gate signal line 709, but it is omitted in the drawing. When the matrix wiring board having the short ring is inspected or actually driven, the matrix wiring is cut from the short ring in advance by cutting the cut portions e _{1 to} e ₃₀ and f _{1 to} f ₂₀ by laser processing.

FIG. 53 is an explanatory view showing a matrix wiring substrate having a conventional short ring, which is also described in Japanese Patent Laid-Open No. 251931/1990. In FIG. 53, 711 is a short ring, 712 to 717 are short rings that share a plurality of source signal lines (hereinafter referred to as block short rings) 718 is a source signal line, 719 is a gate signal line, 72
0 to 723 are inspection electrodes connected to the short ring 711, 724
~ 729 are inspection electrode terminals connected to the block short ring (hereinafter referred to as block inspection electrode terminals), 730, 731
Is an IC connection electrode for connecting the terminal electrode of the driving IC to each signal line, 733 is an inspection electrode terminal formed at both ends of each signal line, a _{1 to} a ₄ , b _{1 to} b ₆ , c _{1 to} c ₂₀ and d ₁
˜d ₃₀ are cutting parts. Although the TFT as a switching element is formed at the intersection of the source signal line 718 and the gate signal line 719 in FIG. 53, it is omitted in the drawing.

With such a configuration, the source signal lines are short-circuited by 10 or more to form a common block,
In addition, each common block is connected to a short ring formed in the peripheral portion. In the process of inspecting the matrix wiring board, first, the cut portions a _{1 to} a ₄ provided in the squares of the short ring 711 are irradiated with laser light to cut. As a result, the matrix wiring becomes the inspection electrode terminal 72.
The short ring 711 connected to 0 to 723 is separated into two sets of a source signal line group and a gate signal line group, which are short-circuited by each side portion after the disconnection. Therefore inspection electrode terminals
By applying a voltage between 720 and 722 or between 721 and 723, it is possible to detect a short circuit defect between the blocks. If a defect is detected, the cutting part b ₁
Cutting the ~b ₆ inspects the block. Finally, by cutting the cut portions c _{1 to} c ₂₀ and d _{1 to} d ₃₀ , respectively, all wirings can be separated and independent. Therefore, when there is a defect in the block, each signal line can be separately isolated for the inspection, and the inspection time can be shortened.

As described above, it has been attempted in the past to prevent the dielectric breakdown of the matrix wiring and the breakdown of the active device by the short ring, but the short ring must be disconnected when inspecting each wiring for disconnection or short circuit. I won't.

[0008]

However, when the matrix wiring is separated from the short ring, the first wiring group and the second wiring group forming the matrix wiring are electrically insulated from each other as described above. However, when static electricity is applied between the wiring groups, there is a problem that an overvoltage is applied to the active devices formed between the wirings at the intersections or at the intersections, resulting in breakdown such as dielectric breakdown or characteristic deterioration of the active devices. In this state, an inspection process, a liquid crystal panel assembling process, a driving IC mounting process, etc. must be performed. Therefore, if electric charges are supplied to a wiring on the matrix wiring board during these steps, the wiring crosses. There is a problem that an active device formed at a portion or an intersection portion fails due to electrostatic breakdown or the like.

Further, in the matrix wiring board of FIG. 53,
Although the wirings that make up the wiring blocks are short-circuited, the wiring blocks are electrically isolated,
When static electricity is applied between the wiring blocks, a potential difference is generated between the wiring blocks and other wiring blocks. Therefore, there is a problem in that an intersection of the wiring block including the wiring to which the electric charge is supplied and another wiring block and a failure such as electrostatic breakdown or characteristic deterioration of the TFT formed at the intersection occur.

The present invention has been made in order to solve such a problem, and prevents a failure such as dielectric breakdown or characteristic deterioration of an electrically insulated crossing portion of an matrix wiring board or an active device formed at the crossing portion. An object of the present invention is to provide a matrix wiring board that can perform an electrical inspection such as a short circuit and a disconnection of the matrix wiring without causing the wiring.

[0011]

The matrix wiring board of the present invention is a first wiring board formed by a conductor on an insulating board.
A wiring group and a second wiring group formed of a conductor having an intersecting portion electrically insulated from the first wiring group. At least one that connects the ends of some wires
A first low resistance wiring and at least one second low resistance wiring connecting end portions of at least a part of the wiring of the second wiring group are provided, and the first low resistance wiring and the second low resistance wiring are provided. Is connected to the low-resistance wiring via a device having the function of an electrical switch for direct current or alternating current.

As the element having the function of the electric switch, a switching element capable of reversibly selecting a conducting state and an insulating state, a capacitor, a composite element in which a capacitor and a resistor are connected in parallel, a certain voltage value or more A switching element that is irreversibly brought into a conductive state when the voltage is applied, or a switching element that is reversibly brought into a conductive state or an insulating state depending on an applied voltage value is used.

Yet another matrix wiring board according to the present invention is a first wiring board formed by a conductor on an insulating board.
A wiring group of the first wiring group and a second wiring group formed of a conductor having an intersection electrically insulated from the first wiring group. One end side of at least one first switching element is connected to a connecting portion of at least one end portion of one wiring or at least one end portion of a plurality of wirings, and the other end side of the first switching element is second Is connected to the end of each wire of the wire group directly or via the second switching element.

A composite structure in which a switching element in which the first and / or the second switching element irreversibly changes from a conductive state to an insulating state and a switching element in which the insulating state changes irreversibly to a conductive state are connected in series. It is preferable that at least two switching elements are connected in parallel because the insulating state can be maintained during the inspection and the conductive state can be maintained except during the inspection.

Still another matrix wiring board according to the present invention is a first wiring board formed by a conductor on an insulating board.
A wiring group and a second wiring group formed of a conductor having an intersecting portion that is electrically insulated from the first wiring group, the matrix wiring substrate comprising at least one matrix wiring group. An element having a function of an electrical switch for direct current or alternating current is provided at both ends of each of the constituent wires or at both ends of a plurality of wires.

As the element having the function of the electric switch, a switching element capable of reversibly selecting a conducting state and an insulating state, a switching element which irreversibly changes from an insulating state to a conducting state, an inductor, a resistor, or an inductor. An element in which a resistor and a resistor are connected in series is used.

Yet another matrix wiring board according to the present invention is a first wiring board formed by a conductor on an insulating board.
A wiring group and a second wiring group formed of a conductor having an intersecting portion electrically insulated from the first wiring group, wherein both ends of each wiring are the matrix. It is connected to one electrode of a capacitor formed on a wiring board, and the other electrode of the capacitor is connected to an equipotential path.

Still another matrix wiring board according to the present invention is a first wiring board formed by a conductor on an insulating board.
And a second wiring group formed of a conductor having an intersecting portion electrically insulated from the first wiring group, the matrix wiring substrate comprising: The resistance wirings have a resistance higher than that of the matrix wiring and a resistance lower than the insulation resistance value between the wirings at the intersections.

Still another matrix wiring board according to the present invention is a first wiring board formed by a conductor on an insulating board.
A wiring group and a second wiring group formed of a conductor having an intersection electrically insulated from the first wiring group, the matrix wiring board having all of the matrix wirings. While being connected by a resistance wiring having a resistance higher than that of the matrix wiring and having a resistance lower than the inter-wiring insulation resistance value at the intersection,
Both ends of each wiring of the matrix wiring are connected to one electrode of a capacitor formed on the matrix wiring substrate, and the other electrode of the capacitor is connected to an equipotential path.

[0020]

According to the present invention, the element having the function of an electrical switch for direct current or alternating current is provided in the middle of the low resistance wiring connected to all of the matrix wirings. In the process of inspecting the electrical characteristics, the insulating state can be selected when an electric signal is input to the matrix wiring from the outside, and the conductive state can be selected when the electric signal is not input. When the switching element is in the insulated state, the low resistance wiring is divided into individual wirings for each wiring or a plurality of wirings by this switching element, and each of them is insulated. All matrix wirings connected to
A plurality of insulated wiring groups are formed. Since these wiring groups are insulated, an independent electric signal can be input to each, and the electrical characteristics of the matrix wiring board can be inspected.

On the other hand, when the element having the function of the electrical switch is made conductive, the low resistance wiring becomes one continuous wiring, and all the matrix wirings are connected by the low resistance wiring. Therefore, even if static electricity is applied between two matrix wirings, a current mainly flows through the low resistance wirings, and the voltage drop cancels the voltage between the two wirings generated by the static electricity. Therefore, an overvoltage is not applied to the insulated intersection of the two matrix wirings, and the active device provided at the intersection does not cause dielectric breakdown or deterioration.

As the element having the function of the electrical switch, a switching element capable of reversibly selecting a conducting state and an insulating state is used, so that an insulating state for inspecting wiring and a conducting state when not inspected. Switching between and can be simplified.

Further, since a capacitor is used as the element having the function of the electric switch, a low impedance is obtained for a high frequency component, and even if static electricity is applied between two matrix wirings, the initial impedance is reduced. Specifically, a current flows through this capacitor, the voltage drop consumes the voltage between the two wirings generated by static electricity, and the overvoltage is not applied to the insulated intersection of the two matrix wirings.

Further, since a composite element in which a capacitor and a resistor are connected in parallel is used as an element having the function of the electric switch, a DC voltage component between two wirings caused by static electricity is a resistance. A current flows through the body, and the voltage drop causes the voltage between the two wires generated by static electricity to be consumed, and if an AC voltage component is applied, it is consumed by the capacitor as described above and the two matrix wires are insulated. No overvoltage is applied to the intersection.

Further, as the element having the function of the electric switch, a switching element which is irreversibly brought into a conductive state when a voltage of a certain voltage value or more is applied is used. When the voltage between wirings exceeds a certain value, the switching element becomes conductive and current flows, and the voltage drop consumes the voltage between the two wirings generated by static electricity, and the insulated intersection of the two matrix wirings. No overvoltage is applied to the.

Further, by using a switching element that reversibly becomes conductive or insulated by an applied voltage value as an element having the function of the electric switch, between two wirings generated by the supply of static electricity. When the voltage exceeds a certain value, the switching element becomes conductive and a current flows, and the voltage drop consumes the voltage between the two wirings generated by static electricity, and an overvoltage occurs at the insulated intersection of the two matrix wirings. Not applied. At the same time, when the applied voltage becomes a certain value or less, the insulating state is restored, so that the matrix wiring board can be inspected in the subsequent steps.

Further, according to the invention of claim 7, the first
Since at least one end of each matrix of the wiring group is connected to the second wiring group via the switching element, the switching element can be switched between the conducting state and the non-conducting state. The second wiring group and the second wiring group can be brought into a non-conducting state and normally in a conducting state to prevent an overvoltage between the wirings due to the application of static electricity and also to inspect the wiring. it can.

According to the eighth aspect of the present invention, it is possible to irreversibly change the switching element which is irreversibly changed from the conducting state to the insulating state to the end of each matrix wiring and the insulating state to the conducting state. Since a composite switching element in which switching elements are connected in series is provided, the switching element that can irreversibly change from the insulating state to the conductive state before the inspection process is brought into the conductive state and the composite switching element is brought into the conductive state. By this, the low resistance wiring becomes one continuous wiring, and all the matrix wirings are connected by the low resistance wiring. Therefore, even if static electricity is applied between two matrix wirings, a current mainly flows through this low resistance wiring, and the voltage drop between the two wirings is consumed due to the voltage drop, and the two matrix wirings are consumed. No overvoltage is applied to the insulated intersection of the. In the inspection step, the matrix wiring board can be inspected by setting the switching element, which can irreversibly change from the conductive state to the insulated state, to the insulated state. After the inspection,
Due to static electricity, the composite switching device connected in parallel with the composite switching device can be irreversibly changed from the insulated state to the conductive state by bringing the switching device into the conductive state to bring the composite switching device into the conductive state. It is possible to prevent breakdown such as dielectric breakdown.

According to the invention of claim 9, an element having an electric switch function for direct current or alternating current is provided at the end of each matrix wiring forming at least one matrix wiring group. Therefore, when the matrix wiring board is inspected or actually driven, the element having the switch function is brought into a conductive state, and the insulating state is selected in other manufacturing steps. By insulating the element having the switch function, the matrix wiring becomes in a floating state and the contact area with the outside is reduced, so that static electricity can be prevented from being supplied to the wiring.

Since a switching element capable of reversibly selecting a conductive state and an insulating state is used as the element having the function of the electric switch, conduction in an inspection step or an actual driving and other manufacturing steps is performed. The state and the insulated state can be easily switched.

Further, since the switching element capable of irreversibly changing from the insulating state to the conductive state is used as the element having the function of the electric switch, the matrix wiring is in the floating state when the switching element is in the insulating state. In addition, the contact area with the outside can be reduced and the supply of static electricity to the wiring can be prevented. Moreover, inspection and actual driving can be performed by changing the switching element to the conductive state.

Further, since the inductor is used as the element having the function of the electric switch, the inductor acts as a high impedance for a voltage signal having a high frequency component supplied from the end side of the matrix wiring of the inductor. , It is possible to prevent an overvoltage from being applied to the intersection of the matrix wiring.

Further, since the resistor is used as the element having the function of the electrical switch, the resistor is resistant to the voltage signal having the high frequency component supplied from the end side of the matrix wiring of the resistor. A low-pass filter is formed together with the capacitive component in parallel with the body to prevent a sharp overvoltage from being applied to the intersection of the matrix wiring.

Further, since the inductor and the resistor connected in series are used as the element having the function of the electric switch, a high frequency component supplied from the end side of the resistor and the matrix wiring of the inductor is provided. For the voltage signal, a low-pass filter is configured with the capacitance component in parallel with the resistor and the inductor to prevent a sharp overvoltage from being applied to the intersection of the matrix wiring.

According to the fifteenth aspect of the invention, a capacitor having one electrode connected to the end of each wiring and the other electrode connected to the equipotential path is provided on the matrix wiring substrate. Therefore, a voltage signal having a high frequency component applied to the matrix wiring acts as a low impedance, a current flows between the equipotential path, and a sharp overvoltage is applied to the intersection of the matrix wiring. Prevent that.

Further, according to the sixteenth aspect of the present invention, all the end portions of the matrix wiring have a resistance higher than the resistance value of the matrix wiring and are higher than the inter-wiring insulation resistance value at the intersection. Since they are connected by resistance wiring that lowers, even if static electricity is supplied between the two matrix wirings, it is possible that an overvoltage is applied to the intersections of the matrix wirings due to the current flowing through the resistance wirings. To prevent. Since the resistance between the two matrix wirings is sufficiently higher than the resistance of the matrix wiring itself, it does not hinder the inspection of the matrix wiring board.

According to the seventeenth aspect of the invention, in addition to the equipotential path, the resistance value is higher than the resistance value of the matrix wiring and is lower than the inter-wiring insulation resistance value at the intersection. Since they are connected by such resistance wiring, and the equipotential path and the matrix wiring are connected via the capacitor, even if static electricity occurs between the wirings, a current is passed through both the resistance wiring and the capacitor to make them equipotential. Prevent overvoltage. In particular, high-frequency voltage can be short-circuited with a capacitor, which is effective for high-frequency noise. In addition, since there is usually a high resistance state between the wirings, there is no problem in the inspection of the wiring board.

[0038]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, a matrix wiring board of the present invention will be described with reference to the drawings.

In the present invention, at least one end of the first wiring group and / or the second wiring group of the matrix wiring substrate has an element having an electric switch function for direct current or alternating current for each matrix wiring or for several matrix wirings. Alternatively, the wirings connected to all the blocks are connected so that the conductive state and the insulated state can be switched. As the element having this switching function, various switching elements such as transistors, capacitors, parallel connection elements of capacitors and resistors, inductors, series connection elements of inductors and resistors, resistors, etc. may be used. it can. Examples of each element and the connecting method will be described in detail below.

[Embodiment 1] FIG. 1 shows T of Embodiment 1 of the present invention.
It is explanatory drawing which shows the structure of FT active matrix wiring board. In FIG. 1, 101 is a gate signal wiring and 102 is a source signal wiring, and a TFT is formed at the intersection of the gate signal wiring 101 and the source signal wiring 102, but they are omitted in the drawing. 103a and 113a are inspection electrode terminals on the gate side, and 104a and 114a are inspection electrode terminals on the source side. Ten
5a and 105b are one of the total number of source signal wiring groups,
And a low resistance wiring (short ring) for commonly short-circuiting one of all gate signal wiring groups, a transistor 106 having its source 106a and drain 106b connected to low resistance wirings 105b and 105a, respectively, and a gate 106c having one An electrode is connected to the other electrode side of the grounded switching capacitor 107, and an electrode terminal 108 for applying an electric charge to the switching capacitor 107 is connected to the connection point. As the switching capacitor 107, for example, one having a capacity of about 1 to 100 μF can be used, although it depends on the performance of the TFT.

At normal times, that is, except when a short circuit is inspected between the gate signal wiring and the source signal wiring, the electrode terminal 108
By applying a constant positive voltage, the switching capacitor 107
Is applied to increase the potential of the gate 106c of the transistor 106 to turn on the transistor 106 so that the source 106a and the drain 106b are electrically connected. This allows 105a
And the low resistance wirings of 105b are short-circuited, and serve as a conventional short ring. At this time, the gate signal wiring
A disconnection inspection of 101 or the source signal wiring 102 can be performed.

On the other hand, at the time of short-circuit inspection between the gate signal wiring 101 and the source signal wiring 102, the electrode terminal 108 is grounded, the transistor 106 is turned off, and the low resistance wiring 105 is provided.
Insulating between a and 105b, and inspecting the conduction between the inspection electrode terminals 103a, ... And 104a ,. You can However, if a short circuit occurs between the gate signal wiring 101 and the source signal wiring 102, the location of the short circuit and the number of short circuits cannot be limited.

[Embodiment 2] In Embodiment 1, one of all the signal wiring groups and one of all the source wirings are short-circuited by the low resistance wiring. However, in this embodiment, as shown in FIG. One of the gate signal wiring group and one of several source wiring groups are short-circuited by the low resistance wirings 105a to 105d, and the transistors 106A to 106D and the capacitor 107A are connected.
To 107D are connected to each block. Therefore, at the time of short-circuit inspection of the gate signal wiring 101 and the source signal wiring 102 of the above-mentioned embodiment, the electrode terminal 108A is grounded,
With the transistor 106A turned off, the low resistance wiring 105a
And 105b are insulated from each other to inspect the conduction between the electrodes of the inspection electrode terminals 103a, 103b, 103c and 104d, 104e, 104f. Shorts with 102 can be checked. However, the signal wiring 101 in the block 110
If a short circuit occurs between the source wiring 102 and the source wiring 102, the location of the short circuit and the number of short circuits cannot be limited.

[Embodiment 3] FIG. 3 shows T of Embodiment 3 of the present invention.
It is explanatory drawing which shows the structure of FT active matrix wiring board. In FIG. 3, 101 is a gate signal wiring, 102 is a source signal wiring, and gate signal wiring 101 and source signal wiring 102.
Although a TFT is formed at the intersection of, it is omitted in the drawing. 103a, 103b ..., 113a, 113b ...
Gate side inspection electrodes, 104a, 104b ..., 114a, 114b
... are source-side inspection electrodes. Reference numeral 106 denotes a transistor, the source 106a side of which is connected to the source signal wiring 102 or the gate signal wiring 101, the drain 106b side thereof is connected to the low resistance wiring 105, the gate 106c is all short-circuited, and one electrode is grounded. An electrode terminal 108 is connected to the other electrode side of 107, and an electrode terminal 108 for applying an electric charge to the switching capacitor 107 is connected to the connection point.

At a normal time, that is, at a time other than the wiring inspection, a constant voltage is applied from the electrode terminal 108 to give an electric charge to the switching capacitor 107 so that the gate of the transistor 106 is provided.
The potential of 106c is increased to turn on the transistor 106 so that the source 106a and the drain 106b are electrically connected. As a result, the gate signal wiring 101 and the low resistance wiring 105 are short-circuited and the source signal wiring 102 and the low resistance wiring 105 are short-circuited to function as a conventional short ring.

On the other hand, at the time of short-circuit inspection between the gate signal wiring 101 and the source signal wiring 102, the electrode terminal 108 is grounded, the transistor 106 is turned off, and between the source signal wiring 101 and the low resistance wiring 105 and Gate signal wiring 10
By insulating between 2 and the low resistance wiring 105, the conduction between the inspection electrode terminals 103a, ... And 104a ,. can do. It goes without saying that the gate signal wiring 101 or the source signal wiring 102 and the short circuit between adjacent wirings can be inspected in the same manner.

[Embodiment 4] In Embodiment 3, transistors are provided at both ends of the gate signal wiring group or the source signal wiring group, but in this embodiment, as shown in FIG.
By short-circuiting only a few terminals on one side and connecting a transistor to the short-circuited portion, the inspection electrode terminal 103a, ...
The short circuit between the gate signal wiring 101 and the source signal wiring 102 in the block can be inspected at one time by inspecting the conduction between .. and 104a ,. However, if a short circuit occurs between the gate signal wiring and the source signal wiring in the block, the location of the short circuit and the number of short circuits cannot be limited. It goes without saying that the source signal wiring or the gate signal wiring can be similarly inspected for disconnection.

[Embodiment 5] In Embodiment 3, transistors are provided at both ends of the gate signal wiring 101 and the source signal wiring 102, but in this embodiment, as shown in FIG. Shorted so that they are staggered left and right, and transistors are connected to that part, or adjacent source signal wirings 102 are shorted so that they are staggered vertically, and transistors are connected to that part Is. This allows the gate signal wiring 10
1 inspection electrode terminal during short circuit inspection between 1 and source signal wiring 102
By inspecting the continuity between 103a, ... And 104a ,. You can Further, when a short circuit occurs, the short circuit location can be determined by changing the combination between the inspection electrodes.

It goes without saying that the gate signal wiring 101 or the source signal wiring 102 can be collectively tested for disconnection.

[Embodiment 6] FIG. 6 shows T of Embodiment 6 of the present invention.
It is explanatory drawing which shows the structure of FT active matrix wiring board. In FIG. 6, 101 is a gate signal wiring, 102 is a source signal wiring, and the gate signal wiring 101 and the source signal wiring 1
Although a TFT is formed at the intersection of 02, it is omitted in the drawing. Inspection electrode terminals 103a, ... And 104a, ... On one end side of the gate signal wiring 101 and the source signal wiring 102
Are all short-circuited by the low resistance wirings 105b and 105a, and the other end is connected to the inspection electrode terminals 113a, ...
... is provided. Gate side low resistance wiring 105b
And the low resistance wiring 105a on the source side are connected via a capacitor 121. As the capacitor 121, for example, one having a capacitance of about 1 to 100 μF can be used, although it depends on the performance of the TFT.

Normally, the inspection electrodes 113a, ... And 114
Even if static electricity is generated between a, ..., Since the instantaneous overvoltage generated by the static electricity is regarded as an AC signal, the low resistance wiring on the gate side and the low resistance wiring on the source side are electrically connected through the capacitor. Therefore, there is no risk of dielectric breakdown at the intersection of the gate signal wiring 101 and the source signal wiring 102.

In addition, for the short circuit inspection of the gate signal wiring 101 and the source signal wiring 102, the inspection electrode terminals 113a, ...
It can be measured by sending a DC signal between 4a, ... It goes without saying that the gate signal wiring and the source signal wiring can be inspected for disconnection.

[Seventh Embodiment] In the sixth embodiment, the capacitor is formed between the low resistance wiring on the gate signal wiring 101 side and the low resistance wiring on the source signal wiring 102 side. As described above, since the capacitor 121 and the low resistance body 122 are connected in parallel between the low resistance wiring 105b on the gate signal wiring 101 side and the low resistance wiring 105a on the source signal wiring 102 side, the inspection electrode terminals 103a ,. ..And 104a, ..
・ Even if static electricity is generated between them, the AC component of static electricity passes through the capacitor 121 and has low resistance wiring on the gate signal wiring 101 side.
Since 105b and the low resistance wiring 105a on the source signal wiring 102 side are electrically connected and the direct current component of static electricity is consumed by the resistor 122, the gate signal wiring 101 and the source signal wiring 102
There is no risk of dielectric breakdown at the intersection of. Resistor 12
As 2, it is possible to use, for example, one having a value of about 50 to 100 MΩ, although it depends on the performance of the TFT.

Needless to say, similar to the sixth embodiment, it is possible to inspect each signal wiring for short circuit and disconnection.

[Embodiment 8] FIG. 8 is an explanatory view for explaining an embodiment 8 of the invention. In FIG. 8, 201i and 202j denote the i-th gate signal wiring and the j-th source signal wiring, respectively. A TFT 203ij (subscripts i and j correspond to pixels in the i-th row and the j-th column, respectively) is formed in each pixel portion where the gate signal wiring 201i and the source signal wiring 202j intersect. 206i and 206j are inspection electrode terminals connected to one end of the i-th gate signal wiring 201i and source signal wiring 202j, respectively. Reference numeral 215 is a gate-side low resistance wiring that short-circuits all of the gate signal wirings 201i. Reference numeral 216 is a source-side low resistance wiring that short-circuits all of the source signal wirings 201j. Reference numeral 204 is a short-circuit TFT formed by the same process as the TFT 203ij in the pixel portion.

FIG. 9 is a sectional view of the short-circuiting TFT 204. Reference numerals 207, 208, and 209 denote electrodes made of conductors, 212 an insulating oxide film, 213 a channel region made of a semiconductor, and 214 a glass substrate.

In the present embodiment, the thickness d of the insulating oxide film 212 of the short-circuit TFT 204 is made thin so that the withstand voltage of the short-circuit TFT 204 becomes lower than the withstand voltage of the pixel TFT 203ij. Gate electrode 2 of TFT 204 for short circuit
07 is connected to one end of the gate side low resistance wiring 215, and the source electrode 208 is connected to one end of the source side low resistance wiring 216. In addition, the drain electrode 209 is not connected anywhere. Further, at the other end of the gate side low resistance wiring 215, the gate side common inspection electrode terminal 218 is connected to the source side low resistance wiring 216.
Source-side common inspection electrode terminals 217 are respectively connected to one ends of the. The short-circuit TFT 204 and the low-resistance wirings 215 and 216 are cut along the broken line 211 and removed after the short-circuiting and breaking of the matrix wiring are inspected.

Next, a method of inspecting each signal wiring of the matrix wiring board of FIG. 8 for disconnection and short circuit will be described.
The disconnection of the gate signal wiring 201i is inspected by applying a signal to the gate side common inspection electrode terminal 218 and each gate side signal inspection electrode terminal 206i.
The disconnection inspection is performed by applying a signal to the source-side common inspection electrode terminal 217 and each source-side inspection electrode terminal 206j. Also, the gate signal wiring 201i and the source signal wiring 2
For short circuit inspection between 02j, common inspection electrode terminal on the gate side
This is performed by checking the continuity between 218 and the source-side common inspection electrode terminal 217.

Next, when static electricity is generated between certain wirings 201i and 202j in the process of manufacturing the matrix wiring board and the inspection process, the TF of the pixel portion where these wirings intersect with each other.
A potential difference occurs between the gate and source of T203ij. This potential is also applied between the gate electrode 207 and the source electrode 208 of the shorting TFT 204 connected in parallel. Here, since the withstand voltage of the short-circuit TFT 204 is lower than the withstand voltage of the pixel TFT 203ij, the insulating oxide film 212 of the short-circuit TFT 204 causes dielectric breakdown earlier than the TFT 203ij, and the charge generated by static electricity is generated by the short-circuit TFT 20.
It flows in the insulating oxide film of 4. Furthermore, since a voltage drop occurs in this process, no overvoltage is applied between the gate and source of the pixel TFT 203ij.

As described above, the low resistance wiring 215 in which one ends of all the gate signal wirings are short-circuited and the low resistance wiring 216 in which one ends of all the source signal wirings are short-circuited are
The short circuit TFT 204 is connected to the gate electrode 207 and the source electrode 208, respectively, and the withstand voltage of the TFT 204 is set lower than the withstand voltage of the pixel TFT 203ij. The short-circuit inspection can be performed, and even when static electricity is generated between certain wirings, only the short-circuit TFT is early dielectrically broken down, so that the pixel TFT 203ij is protected from overvoltage.

[Ninth Embodiment] FIG. 10 is an explanatory view for explaining a ninth embodiment of the present invention. In FIG. 10, the i-th gate signal wiring 201i, the j-th source signal wiring 202j, and the TFT 20
3ij (subscripts i and j correspond to pixels in the i-th row and the j-th column, respectively) are the same as those in the eighth embodiment.
206mi and 206ni are inspection electrode terminals connected to the left end and the right end of the i-th gate signal wiring in FIG. 10, 206pj and 206qj are upper and lower ends of the j-th source signal wiring in FIG. Is an inspection electrode terminal connected to. 204i and 205j are the TFTs 203ij of the pixel portion
It is a short-circuit TFT formed by the same process as described above. The cross-sectional configuration diagram of these short-circuit TFTs 204i and 205j and the connection of electrodes 207, 208 and 209 are shown in FIG.
It has the same structure as T. The gate electrode 207 of the short-circuit TFT 204i on the gate signal line side is connected to one end of the gate signal line 201i, and the gate electrode 207 of the short-circuit TFT 205j on the source signal line side is connected to one end of the source signal line 202j. In addition, all short-circuit TFT204
The electrodes 208 of i and 205j are short-circuited by a short ring 210 which is a low resistance wiring. The thickness d (see FIG. 9) of the insulating oxide film 212 of the short-circuit TFT is formed thin so that the withstand voltage of two short-circuit TFTs connected in series becomes lower than the withstand voltage of one pixel TFT 203ij. The short-circuit TFTs 204i and 205j and the short ring 210 are cut off along the broken line 211 after the short-circuit and break of the matrix wiring are inspected.

Next, a method of inspecting the signal wirings of the matrix wiring board of FIG. 10 for breaks and short circuits will be described.
The disconnection of the matrix wiring is inspected by applying a signal between the gate side inspection electrode terminals 206mi and 206ni and between the source side inspection electrode terminals 206pj and 206qj. Further, the short circuit between the gate signal wiring 201i and the source signal wiring 202j can be inspected for each pixel by examining the conduction between a certain gate side inspection electrode terminal 206mi and a certain source side inspection electrode terminal 206pj. it can.

FIG. 11 is an equivalent circuit diagram of this embodiment viewed from a certain pixel TFT 203ij. When static electricity is generated between certain wirings 201i and 202j in the process of manufacturing the matrix wiring board or the inspection process, a potential difference is generated between the gate 219 and the source 220 of the TFT 203ij of the pixel portion where these wirings intersect, that is, between A and B. Occurs. This potential difference is caused by the electrodes 207a of the two short-circuiting TFTs 205j and 204i connected in series.
Is also applied between the electrode and the electrode 207b. Here, the thickness d (see FIG. 9) of the insulating oxide film of the short-circuit TFT is set so that the withstand voltage of two short-circuit TFTs 205j and 204i connected in series is lower than the withstand voltage of one pixel TFT 203ij. Since it is formed thin, it flows through the insulating oxide film of the two short-circuit TFTs 205j and 204i. Furthermore, since a voltage drop occurs in this process, the pixel TFT 203
No overvoltage is applied between the gate 219 and the source 220 of ij.

As described above, the short-circuit TFT is connected to one end of each of the gate signal wiring and the source signal wiring, and this T
Since the FTs are connected by the short ring 210, and the withstand voltage of two short-circuiting TFTs connected in series is lower than the withstand voltage of one pixel TFT 203ij, insulation and short-circuit inspection is performed for each wiring. It is possible to perform pixel display, and when static electricity is generated between certain wirings, only the short-circuiting TFT is early dielectrically broken down, and the pixel TFT is protected from overvoltage.

[Embodiment 10] FIG. 12 is an explanatory diagram for explaining Embodiment 10 of the present invention. i-th gate signal wiring 201i,
j-th source signal wiring 202j, TFT 203ij (subscripts i and j correspond to pixels in the i-th row and the j-th column, respectively),
The inspection electrode terminals 206mj, 206ni, 206pj, and 206qj are the same as those shown in the ninth embodiment. 221i, 222
j is a shorting TFT formed by the same process as the pixel TFT 203ij. TF for these shorts
The cross-sectional structure of T221i, 222j and the connection of electrodes 207, 208, 209 are the same as those shown in FIG. Here, the length of the channel between the source 208 and the drain 209 of the short-circuit TFTs 221i and 222j is shortened to shorten the short-circuit TFT 2
It is formed so that the withstand voltage of the individual source and drain connected in series is lower than the withstand voltage between the gate and the source of the pixel TFT 203ij. The electrode 208 of the short-circuit TFT 221i on the gate signal wiring side is connected to one end of the gate signal wiring 201i, and the electrode 208 of the short-circuit TFT 222j on the source signal wiring side is connected to one end of the source signal wiring 202j. Also for all short T
The electrodes 209 of the FTs 221i and 222j are short-circuited by a short ring 210 which is a low resistance wiring. Further, the electrodes 207 of all the short-circuit TFTs 221i and 222j are connected to the wiring 223.
Has been lowered to the GND level. These short-circuit TFTs 221i and 222j and the short rings 210 and G
The ND wiring 223 is cut off along the broken line 211 after inspecting the matrix wiring for a short circuit or a break.

In the tenth embodiment shown in FIG. 12, an insulation short circuit can be inspected for each wiring as in the case of the ninth embodiment, pixel display is possible, and static electricity is generated between certain wirings. Only the short-circuit TFT is dielectrically destroyed, and the pixel TFT is not destroyed. Furthermore, since the thickness of the insulating oxide film can be made equal to the thickness of the insulating oxide film of the TFT of the pixel, the TF for short circuit can be obtained without adding a manufacturing process.
T is formed.

[Embodiment 11] FIG. 13 is an explanatory view for explaining Embodiment 11 of the invention. In FIG. 13, the i-th gate signal wiring 201i, the j-th source signal wiring 202j, and the TFT 20
3ij and inspection electrode terminals 206mi and 206pj are the same as those shown in the tenth embodiment. 215 is a gate side peripheral wiring, 216 is a source side peripheral wiring, 218 is a gate side common inspection electrode terminal, and 217 is a source. It is the side common inspection electrode terminal 217. Reference numeral 229 is a MIM (Metal Insulator Metal) element having a structure in which an insulating film is provided between two metal electrodes. Figure 14
A cross-sectional configuration diagram of this MIM element 229 is shown in FIG. 225 is a Cr electrode, 226 is a Ta electrode connected to the gate wiring 201i, 227
Is an insulating oxide film formed of Ta ₂ O ₅ and having a thickness of about 40 to 60 nm, and 214 is a glass substrate. T of MIM element 229
The a electrode 226 is connected to the gate side peripheral wiring 215, and the Cr electrode 225 is connected to the source side peripheral wiring 216. By setting the thickness of the insulating oxide film 227 of the short-circuit MIM element 229 to an appropriate thickness, it is set lower than the withstand voltage between the gate and the source of the pixel TFT 203ij. These MIM elements
The 229 and the peripheral wirings 215 and 216 are cut out along the broken line 211 after the inspection of the matrix wiring for a short circuit or a break.

In the eleventh embodiment shown in FIG. 13, an MIM element in which wirings in which one ends of all gate signal wirings are short-circuited and wirings in which one ends of all source signal wirings are short-circuited are formed outside the matrix wirings. Since the voltage is lower than the withstand voltage between the gate and the source of the pixel TFT 203ij connected to each of the two electrodes, the insulation inspection and wiring of each line are performed at the time of the inspection of the disconnection or short circuit of the matrix wiring as in the case of the eighth embodiment. A short circuit between the gate and the source of the substrate can be inspected, and even if static electricity is generated between certain wirings, only the MIM element will be dielectrically broken down.
T is not destroyed.

[Embodiment 12] FIG. 15 is a view for explaining an embodiment 12 of the present invention. In FIG. 15, the i-th gate signal wiring 201i, the j-th source signal wiring 202j, and the TFT 203i
j, inspection electrode terminals 206mi, 206pj, gate side peripheral wiring
215, source side peripheral wiring 216, gate side common inspection electrode terminal
218 and the source-side common inspection electrode terminal 217 are the same as those shown in the eleventh embodiment. 230 is a series connection of two diodes in opposite directions (hereinafter BT
B element). FIG. 16 shows a sectional configuration diagram of the BTB element 230. 232 is n-type amorphous silicon (a
-Si) thin film, 233 is an i-type a-Si thin film, 234 is an insulating oxide film 235, 236 is a platinum electrode, and 237 is a glass substrate. BT
The electrode 235 of the B element 230 is connected to the source side peripheral wiring 216 and the electrode 236.
Are respectively connected to the gate side peripheral wiring 215. B
The voltage-current characteristic between the electrodes of the TB element 230 has a non-linear characteristic shown in FIG. V ₁ is set smaller than the withstand voltage between the gate and the source of the pixel TFT 203ij. This BTB
The element 230 and the peripheral wirings 215 and 216 are cut out along the broken line 211 after the inspection of the matrix wiring for a short circuit or a break. Although the withstand voltage V ₁ of the BTB element 230 varies depending on the purpose of use, a withstand voltage V ₁ of about 8 to ₁₀ V can normally be used.

The disconnection inspection of the matrix wiring is performed by applying a signal between the gate side inspection electrode terminal 206mi and the gate side common electrode terminal 218 and between the source side inspection electrode terminal 206pj and the source side common electrode terminal 217, respectively. Done. In addition, the short-circuit inspection between the gate signal wiring 201i and the source signal wiring 202j is performed with the common electrode terminal 217.
Between 218 and 218, by applying a signal voltage of −V _{1 to} V ₁ shown in FIG. 17, since the gate-side peripheral wiring 215 and the source-side peripheral wiring 216 are in an insulating state, a current flows. You can inspect for shorts.

On the other hand, when static electricity is applied between the wirings 201i and 202j in the process of manufacturing the matrix wiring substrate and the inspection process, a high voltage is applied between the gate and the source of the TFT 203ij of the pixel portion where these wirings intersect. V ₂ is produced. This voltage V ₂ is also applied between the electrodes 235 and 236 of the BTB element 230 connected in parallel. Figure 17
As shown in, a current flows between the electrodes of the BTB element 230,
Since a voltage drop occurs in this process, the pixel TFT 203ij
No voltage is applied between the gate and source of the. Therefore, even if static electricity is generated between the wirings 201i and 202j and a high voltage V ₂ is generated between the gate and the source of the TFT 203ij in the pixel portion where these wirings intersect, the pixel TFT 203ij
Is not destroyed. Further, by setting the withstand voltage of the BTB element sufficiently high, even if static electricity occurs once, if the overvoltage is equal to or lower than the withstand voltage of the BTB element, the BTB element is not destroyed, so that the inspection can be continued and the inspection can be performed again. It can cope with the generation of static electricity.

[Thirteenth Embodiment] FIG. 18 is a diagram for explaining the thirteenth embodiment of the present invention. In FIG. 18, the i-th gate signal wiring 201i, inspection electrode terminals 206mi, 206ni, 306pj, 30
6qj is the same as that shown in the ninth embodiment (subscripts i and j correspond to pixels in the i-th row and the j-th column, respectively). 302j is a j-th source signal wiring formed on the counter substrate side. 240 ij is a MIM (Metal Insulator Metal) element having a structure in which an insulating film is provided between two metal electrodes, and its sectional configuration diagram is the same as that shown in FIG. 14 of the eleventh embodiment. The Ta electrode 226 of 240 ij is the gate signal wiring 201 i, and the Cr electrode 225 is the source signal wiring 302 formed on the counter substrate side via the transparent electrode.
j, respectively. 245i and 311j are short-circuit MIM elements formed by the same process as the MIM element 240ij in the pixel section.
The electrode is connected to the gate side peripheral wiring 215, the Cr electrode is connected to the inspection electrode terminal 206ni, the Ta electrode of the MIM element 311j is connected to the inspection electrode terminal 306qj, and the Cr electrode is connected to the source side peripheral wiring 316.

FIG. 19 shows the voltage-current characteristics between the electrodes of the pixel MIM element 240ij and the short MIM elements 245i and 311j. In FIG. 19, the MIM element for pixels 240i
j is A, the short-circuiting MIM elements 245i and 311j
Are represented as B ₁ and B ₂ . As shown in FIG. 19, the rising voltages (B ₁ and B _{2 in} FIG. 19) of the short-circuit MIM elements 245i and 311j are set to the pixel MIM element 240i.
It is set to be sufficiently smaller than the rising voltage V _{1 of} j or to have a steepness with respect to the voltage so that a large amount of current flows in the short-circuit MIM element when a larger voltage V ₂ is applied. I have to. The rising voltage can be adjusted by changing the thickness and area of the insulating oxide film. This short MIM element
The 245i, 311j and the peripheral wirings 215, 316 are cut out along the broken line 211 after inspecting the matrix wiring for a short circuit or a break. In this embodiment, two sets of wiring groups are not formed on the same substrate, but one wiring group is provided on the counter substrate. Thus, one of the wiring groups is formed on the counter substrate. , The respective embodiments of the present invention can be similarly applied. In FIG. 18, those formed on the counter substrate are shown in the 300 series.

In this embodiment, as in the case of the ninth embodiment, the disconnection of the matrix wiring is inspected by the gate side inspection electrode terminal 20.
6mi and 206ni and source side inspection electrodes 306pj and 306q
This is done by applying signals to each of j. The short circuit inspection between the gate signal wiring 201 and the source signal wiring 302 can be conducted for each pixel by examining the conduction between a certain gate side inspection electrode terminal 206mi and a certain source side inspection electrode terminal 306pj. On the other hand, in the manufacturing process and inspection process of the matrix wiring board,
Even if static electricity is generated between 201i and 302j, a high voltage V ₂ is generated between the electrodes 225 and 226 of the MIM element 240ij in the pixel section where these wirings intersect. This voltage V ₂ is ₂ connected in series
It is also applied between the electrodes of the two MIM elements 245i and 311j.
At this time, as shown in FIG. 19, more current flows in the short-circuit MIM element than in the pixel MIM element, and a voltage drop occurs in this process, so that the electrode 2 of the pixel MIM 240ij
Little voltage is applied between 25 and 226. Therefore, even if a high voltage V ₂ is applied between the electrodes of the MIM element 240ij in the pixel portion where these wirings intersect with each other and static electricity is generated between the wirings 201i and 302j, the pixel MIM element 240i
j is not destroyed. Furthermore, by setting the withstand voltage of the short-circuiting MIM element sufficiently high, if the overvoltage is equal to or lower than the withstand voltage even if static electricity is applied once, the short-circuiting MIM element is short.
Since the M element is not destroyed, the inspection can be performed as it is, and it is possible to cope with the static electricity supply again.

[Embodiment 14] FIG. 20 shows T of Embodiment 14 of the present invention.
It is explanatory drawing which shows the structure of FT active matrix wiring board. In FIG. 20, 101 is a gate signal wiring and 102 is a source signal wiring, and a TFT is formed at the intersection of the gate signal wiring 101 and the source signal wiring 102, but they are omitted in the drawing.

A switching element capable of irreversibly changing from a conductive state to an insulating state in the middle of a low resistance wiring 105 connecting all of one end sides of a gate signal wiring 101 and a source signal wiring 102 and an irreversible state from an insulating state to a conductive state A switching element group 150 is formed by connecting at least two or more composite switching elements in which variable switching elements are connected in series in parallel. FIG. 21 shows a conceptual diagram of the switching element group 150. Reference numeral 150 denotes a switching element 152a capable of irreversibly changing from a conductive state to an insulating state and a switching element capable of irreversibly changing from an insulating state to a conductive state.
Composite switching element 152,15 in which 152b is connected in series
At least two or more 3,154 are connected in parallel. Figure 2
2 shows a sectional view of the structure of the composite switching element 152. 161
Is a glass substrate, 162 is, for example, metal wiring of Al or Cr, 1
63 is an insulating film made of, for example, SiO ₂ or SiN, 164
Is a metal wiring made of, for example, Al or Cr. 15
Reference numeral 2a is an irreversible switching element which is initially in a conductive state, and the metal wiring 162 is disconnected by irradiating a laser to be in an insulating state. In addition, 152b is in an insulating state for the first time, and the metal wiring 16b
This is an irreversible switching element in which 4 and the insulating film 163 are melted and the upper metal wiring 164 and the lower metal wiring 162 are connected to each other to be in a conductive state.

At normal times (except when a short circuit is inspected between the gate signal line and the source signal line), the gate signal line 101 and the source signal line 102 have a low resistance due to the composite switching element 153 formed only by the conductive state 153a. It is connected to the wiring 105. Therefore, the low-resistance wiring 105 functions as a short ring, and all the wiring is short-circuited.

Between the gate signal wiring 101 and the source signal wiring 102
When performing a short circuit test at
It is possible to perform a short circuit inspection between the gate signal wiring 101 and the source signal wiring 102 by switching the conductive state 153a from the conductive state to the insulated state by laser cutting. After the inspection is completed, the low resistance wiring 105 again functions as a short ring by switching the composite switching element 154b from the insulated state to the conductive state by laser welding, and the gate signal wiring 101 and the source signal wiring 102 are again provided.
Are short-circuited. Composite switching element 15 connected in parallel
Switching is possible by the number of constituents of 0. Also,
Since they are connected in parallel, there is redundancy.

[Embodiment 15] In Embodiment 14, the switching element capable of irreversibly changing from the conductive state to the insulated state.
The switching element group 150 is configured by connecting at least two or more composite switching elements 152 in which the switching elements 152b that are irreversibly changeable from the insulated state to the conductive state in series are connected in parallel to each other, as shown in FIG. As described above, at least two composite switching elements 172, 173, 174 in which the switching element 172a capable of irreversibly changing from the conductive state to the insulated state and the switching element 172b capable of irreversibly changing from the insulated state to the conductive state are connected in parallel By forming the switching element group 170 by connecting them in series as described above, a large number of composite switching elements can be formed between the gate signal wirings having a narrow pitch width and between the source signal wirings.

At normal times (other than when a short circuit is inspected between the gate signal wiring and the source signal wiring), the composite switching element 172 is formed by only the conductive state 172a so that the gate signal wiring and the source signal wiring have a low resistance wiring 105. And all wiring is short-circuited.

During a short circuit inspection between the gate signal wiring and the source signal wiring, the short circuit inspection between the gate signal wiring and the source signal wiring can be performed by switching the conductive switching element 172a from the conductive state to the insulated state. Become. After the inspection is completed, the 172 of the composite switching element 172 is
By switching b from the insulating state to the conducting state, all the wirings are short-circuited again. Switching can be performed by the number of constituents of the composite switching element group 170 connected in series.

[Embodiment 16] FIG. 24 is an explanatory diagram showing the structure of a TFT active matrix wiring substrate for explaining Embodiment 16 of the present invention. In FIG. 24, the i-th gate signal wiring 201i, the j-th source signal wiring 202j, and the pixel TF
T203ij, inspection electrode terminals 206mi, 206ni, 206pj,
206qj represents the same part as that in the twelfth embodiment. 401mi, 401ni, 401pj, and 401qj are pixel TFs
T for inspection terminal formed in the same process as T203ij
It is FT. However, inspection terminal TFTs 401mi, 401n
i, 401pj, 401qj should have sufficiently high withstand voltage,
The area of the element is formed larger than that of the pixel TFT 203ij.

The drain electrodes 402 of the inspection terminal TFTs 401mi and 401ni are connected to both ends of the gate signal wiring 201i, and the drain electrodes 402 of the inspection terminal TFTs 401pj and 401qj are connected to both ends of the source signal wiring 202j. Further, the source electrodes 40 of the inspection terminal TFTs 401mi and 401ni
Reference numeral 3 is connected to the inspection electrode terminals 206mi and 206ni, respectively, and source electrodes 403 of the inspection terminal TFTs 401pj and 401qj are connected to the inspection electrode terminals 206pj and 206qj, respectively. In addition, all inspection terminal TFTs 401mi, 401n
The gate electrodes 404 of i, 401pj, and 401qj are connected to the switch terminal 406 by the peripheral wiring 405. The inspection terminal TFTs 401mi, 401ni, 401pj, 401qj, the peripheral wiring 405, and the switching terminal 406 are cut out along the broken line 211 after the matrix wiring is inspected for a short circuit or a disconnection.

In this embodiment, a switch is used during a wiring inspection such as a short circuit inspection between the gate signal wiring 201i and the source signal wiring 202j, a disconnection inspection of the gate signal wiring 201i or the source signal wiring 202j, or a short circuit inspection of an adjacent wiring. Terminal
By applying a positive voltage to 406, the TF for the inspection terminal
T401mi, 401ni, 401pj, 401qj are turned on, and each wiring can be inspected by checking the conduction between the inspection electrodes. Since voltage is not applied to the switch terminals 406 except during inspection, each inspection electrode terminal is insulated from each matrix wiring, and since each matrix wiring is covered with a protective film, static electricity is generated in the matrix wiring. Is less likely to be applied to. Therefore, the pixel TFT 203ij is not easily destroyed by static electricity.

[Embodiment 17] FIG. 25 is an explanatory diagram showing the structure of a TFT active matrix wiring substrate for explaining Embodiment 17 of the present invention. In FIG. 25, the i-th gate signal wiring 201i, the j-th source signal wiring 202j, and the pixel TF
T203ij, inspection electrode terminals 206mi, 206ni, 206pj,
206qj, inspection terminal TFTs 401pj and 401qj, peripheral wiring 405, and switch terminal 406 are the same as those in the sixteenth embodiment, but in this embodiment, the gate signal wiring 201i is used.
There is no inspection terminal TFT on the side, and gate signal wiring 201
The inspection electrode terminals 206mi and 206ni are directly connected to i.

In this embodiment, a switch is used during a wiring inspection such as a short circuit inspection between the gate signal wiring 201i and the source signal wiring 202j, a disconnection inspection of the gate signal wiring 201i or the source signal wiring 202j, or a short circuit inspection of an adjacent wiring. Terminal
TFT4 for inspection terminal by applying positive voltage to 406
01pj and 401qj are turned on, and each wiring can be inspected by checking the conduction between the inspection electrodes. Further, since the voltage is not applied to the switch terminal 406 except at the time of inspection, the inspection electrode terminals 206pj and 206qj on the source side are insulated from each matrix wiring and the source signal wiring 202j is covered with the protective film. Static electricity is less likely to occur on the source signal wiring. On the other hand, when static electricity is generated in the gate signal wiring, the potential of the source signal wiring 202j also rises as the potential of the gate signal wiring 201i rises. The charges generated at this time are the high withstand voltage test terminal TFT 401p.
j and 401qj, the dielectric breakdown is unlikely to occur at the intersection of the gate signal wiring and the source signal wiring.

[Embodiment 18] FIG. 26 is an explanatory diagram showing the structure of a TFT active matrix wiring substrate for explaining Embodiment 18 of the present invention. In this embodiment, high withstand voltage phototransistors 411 are provided in place of the high withstand voltage inspection terminal TFTs connected to both ends of the gate signal wiring 201i and the source signal wiring 202j in the 16th embodiment.

In this embodiment, by irradiating the phototransistor 411 with light, each matrix wiring 201i, 2
02j and inspection electrode terminals 206mi and 206ni and 206pj and 2
Since 06qj is brought into conduction, each wiring can be inspected by the same operation as in the sixteenth embodiment. Also, except when inspecting, each inspection electrode terminal is insulated from each matrix wiring by blocking the light to the phototransistor 411, and since each matrix wiring is covered with a protective film, static electricity is not generated. Less likely to be applied to matrix wiring. Therefore, the pixel TFT 203ij is not easily destroyed by static electricity.

[Embodiment 19] FIG. 27 is an explanatory view showing the constitution of a substrate of TFT active matrix wiring for explaining Embodiment 19 of the present invention. In FIG. 27, the i-th gate signal wiring 201i, the j-th source signal wiring 202j, the pixel T
FT203ij, inspection electrode terminals 206mi, 206ni, 206p
j and 206qj represent the same parts as those in the tenth embodiment. Reference numeral 420 denotes an irreversible switching element, the cross-sectional structure of which is shown in FIGS. In FIG. 28 (a),
422 and 423 are conductor terminals, the terminal 422 is the matrix wiring 201i or 202j, and the terminal 423 is the inspection electrode terminal 206p.
j or 206qj. An insulating film 424 insulates the terminals 422 and 423 from each other. 425 is a protective film.

In this embodiment, in the manufacturing process of the matrix wiring board, each inspection electrode is insulated from each matrix wiring, and since each matrix wiring is covered with the protective film, static electricity is applied to the matrix wiring. Less likely to occur. Therefore, the pixel TFT 203ij is not easily destroyed by static electricity. In addition, during the inspection process of the matrix wiring board or during the actual driving,
As shown in (b), the irreversible switching element 420 is irradiated with laser light to electrically connect the terminals 422 and 423.
As a result, the respective matrix wirings and the respective inspection electrode terminals are electrically connected to each other, so that inspection and actual driving can be performed.

[Embodiment 20] FIG. 29 is an explanatory diagram showing the structure of a TFT active matrix wiring substrate for explaining Embodiment 20 of the present invention. In FIG. 29, the i-th gate signal wiring 201i, the j-th source signal wiring 202j, and the pixel TF
T203ij, inspection electrode terminals 206mi, 206ni, 206pj,
206qj, the irreversible switching element 420 is the same as that of the embodiment 19
In the present embodiment, the inspection terminal TFTs are not provided on the gate signal wiring 201i side, and the inspection electrode terminals 206mi and 206mi are provided on the gate signal wiring 201i.
ni are directly connected.

In this embodiment, in the process of manufacturing the matrix wiring board, the source side inspection electrode terminals 206pj and 206qj are insulated from the respective matrix wirings and the source signal wirings are protected by a protective film, as in the case of the seventeenth embodiment. Since it is covered, static electricity is not easily applied to the source signal wiring. On the other hand, when static electricity is generated in the gate signal wiring, the potential of the source wiring 202j also rises as the potential of the gate signal wiring 201i rises, so that no voltage is applied between the gate and the source of the pixel TFT 203ij. Therefore, the pixel TFT 203ij is not easily destroyed by static electricity. Further, in the inspection step or the actual driving of the matrix wiring board, as in the case of Example 19, the irreversible switching element 420 is irradiated with a laser, each matrix wiring and each inspection electrode terminal are electrically connected, and the inspection or the actual It can be driven.

[Embodiment 21] FIG. 30 is an explanatory diagram showing the structure of Embodiment 21 of the present invention. In FIG. 30, 501 is a first wiring group that forms a matrix wiring, 502 is a second wiring group that forms a matrix wiring, 503 is an inspection electrode section of the first wiring group 501 that forms a matrix wiring, and 504 is An inspection electrode portion of the second wiring group 502 forming a matrix wiring, 505 is an inductor provided at both ends of each wiring of the second matrix wiring group, and 506 is a first matrix wiring 5
Second matrix wiring 502 via 01 and inductor 505
It is a low-resistance wiring that short-circuits. Since the second wiring group 502 forming the matrix wiring is connected to the wiring group 501 forming the matrix wiring by providing the inductors 505 at both ends, the wiring groups 501 and 5 forming the matrix wiring are formed.
02 allows inspection of short circuits and open circuits.
On the other hand, due to the inductors 505 formed at both ends of the wiring group 502 forming the matrix wiring, the current instantaneously flowing through the inductor 505 changes in proportion to the inductance L of the inductor 505. Since the time constant is directly proportional to the inductance L, the larger the value of the inductance L, the smaller the current instantaneously flowing through the inductor 505 to the wiring group 502 forming the matrix wiring. Therefore, the voltage component having a high frequency component supplied from the side opposite to the matrix wiring group 502 via the inductor 505 causes the voltage having the high frequency component to be reduced by the inductor 505, and the overvoltage is applied to the wiring group 502 forming the matrix wiring. Prevent it from taking an instant. In this embodiment, the inductors 505 are provided at both ends of the one wiring 502 forming the matrix wiring group, but the same effect can be obtained by providing the inductors 505 at both ends of the wiring group 501 forming the matrix wiring. Needless to say, the inductors 505 may be provided at both ends of the wiring group forming the matrix wiring.

[Embodiment 22] FIG. 31 is an explanatory diagram showing the structure of Embodiment 22 of the present invention. In FIG. 31, 501 is a first wiring group forming a matrix wiring, 502 is a second wiring group forming a matrix wiring, 503 is an inspection electrode portion of the first wiring group 501 forming a matrix wiring, and 504 is An inspection electrode portion of the second wiring group 502 forming a matrix wiring, 505 is an inductor provided at each end of each wiring of the second matrix wiring group, and 506 is a first matrix wiring 5
Second matrix wiring 5 through 01 and inductor 505
Reference numeral 507 denotes a low resistance wiring for short-circuiting 02, and 507 is a connection point in which a plurality of inductors 505 provided at both ends of a wiring group 502 forming a matrix wiring are connected to each block. The second wiring group 502 that forms the matrix wiring has a wiring group 501 that forms the matrix wiring by providing inductors 505 at both ends.
Since the wiring groups 501 and 502 that form the matrix wiring are connected to each other, it is possible to inspect each other for a short circuit and an open circuit. On the other hand, due to the inductors 505 formed at both ends of the wiring group 502 forming the matrix wiring, the current instantaneously flowing through the inductor 505 is
It changes in proportion to the inductance L of 05. At that time, since the constant is directly proportional to the inductance L, the larger the value of the inductance L, the smaller the current instantaneously flowing through the inductor 505 to the wiring group 502 forming the matrix wiring. Therefore, the voltage component having a high frequency component supplied from the side opposite to the matrix wiring group 502 through the inductor 505 is reduced by the inductor 505, and the overvoltage is momentarily applied to the wiring group 502 forming the matrix wiring. Prevent. In this embodiment, a plurality of inductors 505 are connected to form a block,
By using the connection point 507 as an inspection electrode terminal when inspecting each of the wiring groups 501 and 502 forming the matrix wiring group for a short circuit, the time of the inspection process can be shortened. In this embodiment, one wiring forming the matrix wiring group
Although the inductors 505 are provided at both ends of 502, the same effect can be obtained by further providing the inductors 505 at both ends of the wiring group 501 forming the matrix wiring. Further, the inductors 505 may be provided at both ends of both wiring groups forming the matrix wiring. Further, also in the matrix wiring group 501, the same effect can be obtained by blocking the inductors 505 formed at both ends of the wiring.

[Embodiment 23] FIG. 32 is an explanatory diagram showing the structure of Embodiment 23 of the present invention. In FIG. 32, 501 is a first wiring group that forms a matrix wiring, 502 is a second wiring group that forms a matrix wiring, 503 is an inspection electrode portion of the first wiring group 501 that forms a matrix wiring, and 504 is An inspection electrode portion of the second wiring group 502 forming a matrix wiring, 515 is a resistor provided at both ends of each wiring of the second matrix wiring group, and 506 is a first via the first matrix wiring 501 and the resistor 515. It is a low resistance wiring that short-circuits the second matrix wiring 502. Since the resistors 515 are provided at both ends of the second wiring group 502 forming the matrix wiring and connected to the wiring group 501 forming the matrix wiring, the wiring groups 501 and 502 forming the matrix wiring are connected to each other. Short circuit and open circuit inspections are possible. On the other hand, due to the resistors 515 formed at both ends of the wiring group 502 forming the matrix wiring, the current instantaneously flowing through the resistor 515 is
Changes in proportion to the resistance R. Since the time constant is directly proportional to the resistance R, the larger the value of the resistance R, the momentarily the resistance 51
The current flowing through the wiring group 502 forming the matrix wiring via 5 becomes small. Therefore, the voltage component having a high frequency component supplied from the opposite side of the matrix wiring group 502 via the resistor 515 is reduced by the resistor 515, and the overvoltage is momentarily applied to the wiring group 502 forming the matrix wiring. Prevent. In this embodiment, the resistors 515 are provided at both ends of the one wiring 502 forming the matrix wiring group, but the same effect can be obtained by further providing the resistors 515 at both ends of the wiring group 501 forming the matrix wiring. . It goes without saying that the resistors 515 may be provided at both ends of both wiring groups forming the matrix wiring.

[Embodiment 24] FIG. 33 is an explanatory diagram showing the structure of Embodiment 24 of the present invention. In FIG. 33, 501 is a first wiring group forming a matrix wiring, 502 is a second wiring group forming a matrix wiring, 503 is an inspection electrode portion of the first wiring group 501 forming a matrix wiring, and 504 is An inspection electrode portion of the second wiring group 502 forming a matrix wiring, 515 is a resistor provided at both ends of each wiring of the second matrix wiring group, and 506 is a resistor provided between the first matrix wiring 501 and the resistor 515. It is a low resistance wiring that short-circuits the second matrix wiring 502. Reference numeral 517 is a contact point in which a plurality of resistors 515 provided at both ends of a wiring group 502 forming a matrix wiring are connected to each block. Since the second wiring group 502 forming the matrix wiring is connected to the wiring group 501 forming the matrix wiring by providing the resistor 515 at both ends, the wiring groups 501 and 502 forming the matrix wiring are formed.
It is possible to inspect for short circuit and open circuit between wires. On the other hand, due to the resistors 515 formed at both ends of the wiring group 502 forming the matrix wiring, the current instantaneously flowing through the resistor 515 changes in proportion to the resistance R of the resistor 515. Since the time constant is directly proportional to the resistance R, the larger the value of the resistance R, the smaller the current instantaneously flowing through the resistance 515 to the wiring group 502 forming the matrix wiring. Therefore, the voltage component having a high frequency component supplied from the opposite side of the matrix wiring group 502 via the resistor 515 is reduced in voltage by the resistor 515, and an overvoltage is momentarily applied to the wiring group 502 forming the matrix wiring. This is prevented. In the present embodiment, each wiring is formed by connecting a plurality of resistors 515 into blocks and forming a matrix wiring group.
By using the connection point 517 as an inspection electrode when inspecting a short circuit between 501 and 502, the inspection process time can be shortened. In this embodiment, the resistors 515 are provided at both ends of the one wiring 502 forming the matrix wiring group. However, the resistors 515 are further provided at both ends of the wiring group 501 forming the matrix wiring.
Even if is provided, the same effect can be obtained by blocking. Further, resistors 515 may be provided at both ends of both wiring groups forming the matrix wiring to form blocks.

[Embodiment 25] FIG. 34 is an explanatory diagram showing the structure of Embodiment 25 of the present invention. In FIG. 34, 501 to 504 indicate the same parts as those of the twenty-first embodiment, 525 is a resistance provided at both ends of each wiring of the second matrix wiring wiring group 502, and 526 is each wiring of the second matrix wiring wiring group. An inductor 506 connected in series with a resistor 525 provided at both ends is a low resistance wiring 506 that short-circuits the second matrix wiring 502 via the first matrix wiring 501, the resistance 525 and the inductor 526. Since the second wiring group 502 forming the matrix wiring is connected to the wiring group 501 forming the matrix wiring by connecting the resistor 525 and the inductor 526 in series at both ends, the wiring group 501 forming the matrix wiring and The 502 can inspect for short circuit and open circuit between wirings.

On the other hand, a wiring group forming a matrix wiring
A resistor 525 formed at both ends of 502 and an inductor 526 connected in series with the resistor 525 allow the resistor 525 and the inductor 52 to be connected together.
The current instantaneously flowing through 6 changes in proportion to the resistance R of the resistor 525 and the inductance L of the inductor 526. Since the time constant is directly proportional to R and L, the current instantaneously flowing in the wiring group 502 forming the matrix wiring via the resistor 525 and the inductor 526 becomes small. Therefore, the voltage component having a high frequency component supplied from the side opposite to the matrix wiring group 502 via the resistor 525 and the inductor 526 is reduced by the resistor 525 and the inductor 526, and the wiring forming the matrix wiring is formed. It is possible to prevent the overvoltage from being instantaneously applied to the group 502. In this embodiment, one wiring group 502 forming the matrix wiring group is formed.
Although the resistor 525 and the inductor 526 are provided at both ends of the same, the same effect can be obtained by providing the resistor 525 and the inductor 526 in series at both ends of the wiring group 501 forming the matrix wiring. Note that resistor 525 and inductor 5
As 26, the same resistors and inductors as those in the 23rd and 21st embodiments can be used. In addition, resistors 52 are provided at both ends of both wiring groups forming the matrix wiring.
The same effect can be obtained by providing 5 and the inductor 526.

[Embodiment 26] FIG. 35 is an explanatory diagram showing the structure of Embodiment 26 of the present invention. In FIG. 35, all reference numerals refer to the same parts as in Example 25, and in this Example, a resistance 525 connected between the inspection electrode portions 503 and 504 of the wiring group forming the matrix wiring and the low resistance wiring 506. Inductor 526
The connection order is reversed. Also in this embodiment, by connecting the resistor and the inductor in series, the instantaneously flowing current is attenuated, and the same effect as that of the twenty-fifth embodiment can be obtained.

[Embodiment 27] FIG. 36 is an explanatory diagram showing the structure of Embodiment 27 of the present invention. In FIG. 36, reference numerals denote the examples
In the present embodiment, an inductor 526 is connected in series to a connection point 527, which is a resistor provided at each end of each wiring of the second matrix wiring group, and a plurality of 525 is connected for each block. The difference from Examples 25 and 26 is that
Also in this embodiment, the second wiring for forming the matrix wiring is used.
The wiring group 502 is a wiring group 501 in which a resistor 525 and an inductor 526 are connected in series at both ends to form a matrix wiring.
Since the wiring groups 501 and 502 that form the matrix wiring are connected to each other, the wirings can be inspected for short circuit and open. Further, a plurality of resistors 525 are connected to form a block, and the connection point 527 is used as an inspection electrode when inspecting each of the wirings 501 and 502 forming the matrix wiring group for a short circuit. The time can be shortened. On the other hand, the resistors 525 formed at both ends of the wiring group 502 forming the matrix wiring group and the inductor 526 connected in series with the resistors 526 are used to form Examples 25 and 26.
Similarly, the current flowing through the wiring group 502 becomes small. Therefore, a voltage component having a high frequency component applied from the opposite side of the matrix wiring group 502 through the resistor 525 and the inductor 526 has its voltage lowered by the resistor 525 and the inductor 526, and forms a matrix wiring. Wiring group 50
It is possible to prevent overvoltage from being applied to 2 instantaneously. In addition,
In this embodiment, the resistor 525 and the inductor 526 are provided at both ends of the one wiring group 502 forming the matrix wiring group, but the resistor 525 is connected to both ends of the wiring group 501 forming the matrix wiring to form a block. The same effect can be obtained by providing the inductor 526 in series at the connection point. Also,
The same effect can be obtained by providing the block of the resistor 525 and the inductor 526 which are similarly provided at both ends of both wiring groups forming the matrix wiring.

[Embodiment 28] FIG. 37 is an explanatory diagram showing the structure of Embodiment 28 of the present invention. In FIG. 37, all reference numerals refer to the same parts as in Example 27, and in this example, inductors provided at both ends of each wiring of the second matrix wiring group,
It differs from the twenty-seventh embodiment in that a resistor 525 is connected in series to a connection point 527 where a plurality of 526 are connected in blocks.
Also in this embodiment, the second wiring for forming the matrix wiring is used.
Since the wiring group 502 is connected to the wiring group 501 forming the matrix wiring by providing the inductor 526 and the resistor 525 in series at both ends, the wiring groups 501 and 502 forming the matrix wiring are short-circuited with each other and Open inspection is possible. Further, the plurality of inductors 526 are connected to each other to form a block, and the connection point 52 is used when inspecting each of the wirings 501 and 502 forming the matrix wiring group for a short circuit.
By using 7 as the inspection electrode terminal, the inspection process time can be shortened. On the other hand, due to the inductor 526 formed at both ends of the wiring group 502 forming the matrix wiring and the resistor 525 connected in series with the inductor 526, the current flowing through the wiring group 502 becomes small as in the twenty-seventh embodiment. Therefore, the matrix wiring group 50 is connected through the inductor 526 and the resistor 525.
The voltage component having a high frequency component applied from the side opposite to 2 is reduced by the inductor 526 and the resistor 525, and it is possible to prevent the overvoltage from being instantaneously applied to the wiring group 502 forming the matrix wiring. In this embodiment, the inductor 526 and the resistor 525 are provided at both ends of the one wiring group 502 forming the matrix wiring group, but the inductor 526 is provided at both ends of the wiring group 501 forming the matrix wiring.
The same effect can be obtained by connecting and blocking and connecting the resistor 525 in series at the connection point. The same effect can be obtained by providing the inductor 526 and the resistor 525 at both ends of both wiring groups forming the matrix wiring.

[Embodiment 29] FIG. 38 is an explanatory diagram showing the structure of Embodiment 29 of the present invention. In FIG. 38, 101 is a gate signal wiring, 102 is a source signal wiring, 103 is a gate side inspection electrode terminal, and 104 is a source side inspection electrode terminal. Reference numeral 601 is an equipotential path, and 602 is a capacitor.

A capacitor 60 formed on a matrix wiring substrate in which one electrode is connected to the end of each wiring of the matrix wiring and the other electrode is connected to the equipotential path 601.
2 acts as a low impedance for a voltage signal having a high frequency component supplied to the matrix wiring, and a current is passed between the equipotential path 601 to cause a sharp overvoltage at the intersection of the matrix wiring. It is prevented from being applied. As the capacitor 602, a capacitor having a capacitance of about 1 μF or less can be used, though it depends on the use of the wiring board.

At the time of inspecting a short circuit between the gate signal wiring 101 and the source signal wiring 102, a DC voltage is applied to the inspection electrode terminal 10
By applying to 3 and 104, the equipotential path 601 and the matrix wirings 101 and 102 are insulated, and the equipotential path does not serve as a short ring.

FIG. 39 shows the structure when the capacitor 602 is formed between the equipotential path 601 and the matrix wiring. FIG. 39 shows a cross section of the substrate on which the matrix wiring is formed, and shows, for example, a cross section of the main part near the end of the gate signal wiring 101. A dielectric film 603 is provided between the wiring layer of the gate signal wiring 101 and the wiring layer of the equipotential path 601, so that the respective wirings are overlapped with each other, and the capacitor is provided there.
602 is formed.

FIG. 40 shows the structure of a capacitor formed in a plane between the equipotential path 601 and the matrix wiring, for example, the gate signal wiring 101. FIG. 40 is a plan view seen from above the substrate on which the matrix wiring is formed. The equipotential paths 601 and the gate signal wirings 101 are alternately arranged in a comb shape, and a dielectric film is buried between them to form a dielectric film 603, and a capacitor 602 is formed.

[Embodiment 30] FIG. 41 is an explanatory diagram showing the structure of Embodiment 30 of the present invention. In FIG. 41, 101 is a gate signal wiring, 102 is a source signal wiring, 103 is a gate side inspection electrode terminal, and 104 is a source side inspection electrode terminal. 611 is a resistor.

A resistance wiring in which all the matrix wirings are connected by a plurality of resistors 611 so that all the matrix wirings have a higher resistance than the matrix wiring and are lower than the resistance value at the intersection, When static electricity is applied between the two matrix wirings, an electric current is caused to flow through the resistance wirings to prevent an overvoltage from being applied to the intersections of the matrix wirings.

If the resistance between the two matrix wirings is made sufficiently higher than the resistance of the matrix wiring itself, the matrix wiring board can be inspected.

FIG. 42 shows the structure when the matrix wirings are connected by the resistor 611. Resistive wiring is formed by forming thick film resistors 611 between matrix wirings, for example, gate signal wirings 101, and connecting the wirings with each other.

Further, FIG. 43 shows a resistor between the matrix wirings.
It shows another example of the structure when connected by 611. A matrix wiring, such as an amorphous silicon film, a polysilicon film, or a NiCr alloy film, is formed between the gate signal wirings 101, and a resistance wiring having a higher resistivity than the signal wirings is formed.
Set to 1 to connect each wiring.

Further, FIG. 44 shows a resistor between the matrix wirings.
This is another example of the structure when connected by 611. Matrix wiring, eg gate signal wiring 10
Between 1s, the wirings of a pattern having a line width smaller than that of the matrix wiring are connected, and the wirings are connected by using them as resistors.

[Embodiment 31] FIG. 45 is an explanatory diagram showing the structure of Embodiment 31 of the present invention. In FIG. 45, 101 is a gate signal wiring, 102 is a source signal wiring, 103 is a gate side inspection electrode terminal, and 104 is a source side inspection electrode terminal. Reference numeral 601 is an equipotential path, 611 is a resistor, and 602 is a capacitor.

The matrix wiring substrate shown in FIG. 45 has a capacitor 602 in which the inspection electrode terminals 103 and 104 are connected to one electrode and the equipotential path 601 is connected to the other electrode,
In addition, all of the matrix wirings have a higher resistance than the matrix wirings and are connected by a resistor having a resistance value lower than the resistance value of the intersection. In such a matrix wiring, the capacitor 602 formed on the matrix wiring substrate acts as a low impedance for a voltage signal having a high frequency component supplied to the matrix wiring, and is provided between the equipotential paths 601. A steep overvoltage is prevented from being applied to the intersection of the matrix wiring by passing a current. When static electricity is applied between the two matrix wirings, the resistor 611
An overvoltage is prevented from being applied to the crossing portion of the matrix wiring by causing a current to flow therethrough.

Each resistor 611 between two matrix wirings
Is sufficiently higher than the resistance of the matrix wiring itself, and the equipotential path 601 and the matrix wiring are insulated from each other by the capacitor 602, so that the matrix wiring board can be inspected.

FIG. 46 shows a structure in which matrix wirings are connected by a resistor 611 and a capacitor 602 is provided between the matrix wirings and the equipotential path 601. Equipotential path 601 and matrix wiring, for example, gate signal wiring 101
The capacitor shown in FIG. 39 is provided between them, and the resistor 611 composed of the thick film resistor shown in FIG. 42 is provided between the matrix wirings.
The wires are connected with each other.

FIG. 47 shows another structural example in the case where the matrix wirings are connected by the resistor 611 and the capacitor 602 is provided between the matrix wiring 101 and the equipotential path 601.
The capacitor 602 shown in FIG. 39 is provided between the equipotential path 601 and the matrix wiring, for example, the gate signal wiring 101, and the wiring is connected between the matrix wirings by the resistor 611 made of polysilicon shown in FIG.

FIG. 48 shows still another structural example in which the matrix wirings are connected by the resistor 611 and the capacitor 602 is provided between the matrix wirings and the equipotential path 601. A planar arrangement type capacitor 602 shown in FIG. 40 is provided between the equipotential path 601 and the matrix wiring, for example, the gate signal wiring 101, and the resistor 611 made of the thick film resistor shown in FIG. 42 is provided between the matrix wirings. Connect the wires.

FIG. 49 shows still another structural example in which the matrix wirings are connected by the resistor 611 and the capacitor 602 is provided between the matrix wirings and the equipotential path 601. The plane layout type capacitor 602 shown in FIG. 40 is provided between the equipotential path 601 and the matrix wiring, for example, the gate signal wiring 101, and the wiring is formed between the matrix wirings by the resistor 606 made of polysilicon shown in FIG. Connect between.

FIG. 50 shows still another structural example when the matrix wirings are connected by the resistor 611 and the capacitor 602 is provided between the matrix wirings and the equipotential path 601. The capacitor 40 shown in FIG. 39 is provided between the equipotential path 601 and the matrix wiring, for example, the gate signal wiring 101, and the wiring is connected between the matrix wirings by the resistor 611 composed of the thin wiring shown in FIG.

FIG. 51 shows a structure in which the matrix wirings are connected by a resistor 611, and a capacitor 602 is provided between the matrix wirings and the equipotential path 601. Equipotential path 601 and matrix wiring, for example, gate signal wiring
Between 101, the planar arrangement type capacitor 602 shown in FIG.
Are provided between the matrix wirings, and the wirings are connected by the resistor 606 made of the thin wirings shown in FIG.

[0122]

As described above, by arranging an appropriate element in the middle of the low resistance wiring for connecting the matrix wiring, the electrical characteristics of the matrix wiring board can be improved while the end portions of the matrix wiring are connected by the low resistance wiring. (EN) A matrix wiring board which can be inspected and which can prevent breakdown due to static electricity such as dielectric breakdown or characteristic deterioration of an active device formed at the intersection of the matrix wiring board or at the intersection.

The same effect can be obtained by arranging appropriate elements at both ends of the matrix wiring.

Furthermore, the same effect can be obtained by connecting the matrix wiring with a high resistance wire having an appropriate resistance value.

[Brief description of drawings]

FIG. 1 is an explanatory diagram showing a configuration of a first embodiment showing an embodiment of a matrix wiring board of the present invention.

FIG. 2 is an explanatory diagram showing a configuration of a second embodiment showing an embodiment of a matrix wiring board of the present invention.

FIG. 3 is an explanatory diagram showing a configuration of a third embodiment showing an embodiment of a matrix wiring board of the present invention.

FIG. 4 is an explanatory diagram showing a configuration of a fourth embodiment showing an embodiment of a matrix wiring board of the present invention.

FIG. 5 is an explanatory diagram showing a configuration of a fifth embodiment showing an embodiment of a matrix wiring board of the present invention.

FIG. 6 is an explanatory diagram showing a configuration of Example 6 showing an example of the matrix wiring board of the present invention.

FIG. 7 is an explanatory diagram showing a configuration of a seventh embodiment showing an embodiment of a matrix wiring board of the present invention.

FIG. 8 is an explanatory diagram showing a configuration of an eighth example showing an example of the matrix wiring board of the present invention.

FIG. 9 is a cross-sectional view of a short-circuit TFT of Example 8 showing an example of the matrix wiring substrate of the present invention.

FIG. 10 is an explanatory diagram showing a configuration of Example 9 showing an example of the matrix wiring board of the present invention.

FIG. 11 is an equivalent circuit diagram seen from a TFT 403ij of Example 9 showing an example of the matrix wiring substrate of the present invention.

FIG. 12 is an explanatory diagram showing a configuration of Example 10 showing an example of the matrix wiring board of the present invention.

FIG. 13 is an explanatory diagram showing the configuration of Example 11 showing an example of the matrix wiring board of the present invention.

FIG. 14 is a cross-sectional configuration diagram of an MIM element of Example 11 showing an example of the matrix wiring board of the present invention.

FIG. 15 is an explanatory diagram showing a configuration of Example 12 showing an example of the matrix wiring substrate of the present invention.

FIG. 16 is a sectional configuration diagram of a BTB element of Example 12 showing an example of a matrix wiring board of the present invention.

FIG. 17 is a voltage-current characteristic diagram of the BTB element of Example 12 showing an example of the matrix wiring board of the present invention.

FIG. 18 is an explanatory diagram showing a configuration of Example 13 showing an example of the matrix wiring board of the present invention.

FIG. 19 is a voltage-current characteristic diagram of the MIM element of Example 13 showing an example of the matrix wiring board of the present invention.

FIG. 20 is an explanatory diagram showing the configuration of Example 14 showing an example of the matrix wiring board of the present invention.

FIG. 21 is an explanatory diagram of a composite element group of Example 14 showing an example of the matrix wiring board of the present invention.

FIG. 22 is a sectional view of a switching element of Example 14 showing an example of the matrix wiring board of the present invention.

FIG. 23 is an explanatory diagram of a composite element group of Example 15 showing an example of the matrix wiring board of the present invention.

FIG. 24 is an explanatory diagram showing a configuration of Example 16 showing an example of the matrix wiring board of the present invention.

FIG. 25 is an explanatory diagram showing a configuration of Example 17 showing an example of the matrix wiring board of the present invention.

FIG. 26 is an explanatory diagram showing a configuration of Example 18 showing an example of the matrix wiring board of the present invention.

FIG. 27 is an explanatory diagram showing the configuration of Example 19 showing an example of the matrix wiring board of the present invention.

FIG. 28 is a cross-sectional view of an irreversible switching element of Example 19 showing an example of the matrix wiring board of the present invention.

FIG. 29 is an explanatory diagram showing the configuration of Example 20 showing an example of the matrix wiring board of the present invention.

FIG. 30 is an explanatory diagram showing a structure of Example 21 showing an example of the matrix wiring board of the present invention.

FIG. 31 is an explanatory diagram showing a structure of Example 22 showing an example of the matrix wiring board of the present invention.

FIG. 32 is an explanatory diagram showing the structure of a twenty-third embodiment showing an embodiment of the matrix wiring substrate of the present invention.

FIG. 33 is an explanatory diagram showing a configuration of Example 24 showing an example of the matrix wiring board of the present invention.

FIG. 34 is an explanatory diagram showing the structure of a twenty-fifth embodiment showing an embodiment of the matrix wiring board of the present invention.

FIG. 35 is an explanatory diagram showing a structure of Example 26 showing an example of the matrix wiring board of the present invention.

FIG. 36 is an explanatory diagram showing the structure of a twenty-seventh embodiment showing an embodiment of the matrix wiring board of the present invention.

FIG. 37 is an explanatory diagram showing the structure of a twenty-eighth embodiment showing an embodiment of the matrix wiring board of the present invention.

FIG. 38 is an explanatory diagram showing the structure of a twenty-ninth embodiment showing an embodiment of the matrix wiring board of the present invention.

FIG. 39 is an explanatory diagram showing a structure of a capacitor of Example 29 showing an example of the matrix wiring board of the present invention.

FIG. 40 is an explanatory diagram showing another example of the configuration of the capacitor of Example 29 showing the example of the matrix wiring substrate of the present invention.

FIG. 41 is an explanatory diagram showing a configuration of Example 30 showing an example of the matrix wiring board of the present invention.

FIG. 42 is an explanatory diagram showing the structure of equipotential paths of Example 30 showing an example of the matrix wiring board of the present invention.

FIG. 43 is an explanatory diagram showing another example of the configuration of equipotential paths of Example 30 showing an example of the matrix wiring board of the present invention.

FIG. 44 is an explanatory diagram showing still another example of the configuration of the equipotential paths of Example 30 showing an example of the matrix wiring board of the present invention.

FIG. 45 is an explanatory diagram showing a structure of an example 31 showing an example of the matrix wiring board of the present invention.

FIG. 46 is an explanatory diagram showing the structure of the matrix wiring end portion of the embodiment 31 showing the embodiment of the matrix wiring substrate of the present invention.

FIG. 47 is an explanatory diagram showing another example of the configuration of the matrix wiring end portion of the embodiment 31 showing the embodiment of the matrix wiring substrate of the present invention.

FIG. 48 is an explanatory diagram showing still another example of the configuration of the matrix wiring end portion of the embodiment 31 showing the embodiment of the matrix wiring substrate of the present invention.

FIG. 49 is an explanatory diagram showing still another example of the configuration of the matrix wiring end portion of the embodiment 31 showing the embodiment of the matrix wiring substrate of the present invention.

FIG. 50 is an explanatory diagram showing still another example of the configuration of the matrix wiring end portion of the embodiment 31 showing the embodiment of the matrix wiring substrate of the present invention.

FIG. 51 is an explanatory view showing still another example of the configuration of the matrix wiring end portion of the embodiment 31 showing the embodiment of the matrix wiring substrate of the present invention.

FIG. 52 is a diagram showing an example of a conventional matrix wiring board.

FIG. 53 is a diagram showing another example of a conventional matrix wiring board.

[Explanation of symbols]

 101 Gate signal wiring 102 Source signal wiring 103 Inspection electrode terminal 104 Inspection electrode terminal 105 Low resistance wiring 106 Transistor 121 Short ring capacitor 122 Short ring resistor 150 Switching element group 152 Composite switching element 162 Composite switching element 160 Switching element group 201 Gate signal wiring 202 Source signal wiring 204 Shorting TFT 210 Shorting ring 215 Peripheral wiring 216 Peripheral wiring 221 Shorting TFT 222 Shorting TFT 229 MIM element 230 BTB element 240 MIM element 245 Shorting MIM element 302 Source signal wiring 311 Shorting MIM Element 401 TFT for inspection terminal 405 Peripheral wiring 411 High breakdown voltage phototransistor 420 Irreversible switching element 501 First wiring group 502 Second wiring group 503 Inspection terminal portion 504 Inspection terminal portion 505 Inductor 506 Low resistance wiring 515 Resistance 525 Resistance 526 Inn Kuta 601 Equipotential path 602 capacitor 611 resistor

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁵ Identification number Internal reference number FI Technical indication location H05K 1/02 M 8824-4E (72) Inventor Toshio Ohnawa 8-1, Tsukaguchihonmachi, Amagasaki No. 1 Mitsubishi Electric Co., Ltd. Material Device Research Center (72) Inventor Yoshinori Numano 8-1-1 Tsukaguchi Honcho, Amagasaki City Mitsubishi Electric Co., Ltd. Material Device Research Center (72) Inventor Fumio Matsukawa 8-1-1 Tsukaguchi Honcho, Amagasaki City No. 1 Mitsubishi Electric Corporation, Material Devices Research Center

Claims (17)

[Claims] 1. A first wiring group formed by a conductor on an insulating substrate, and a second wiring group formed by a conductor having an intersection electrically insulated from the first wiring group. A matrix wiring board including: at least one first low-resistance wiring for connecting end portions of at least some wirings of the first wiring group and at least some wirings of the second wiring group Is provided with at least one second low resistance wiring, and the first low resistance wiring and the second low resistance wiring have a function of an electrical switch for direct current or alternating current. A matrix wiring board that is connected through elements. 2. The matrix wiring board according to claim 1, wherein the element having a function of the electric switch is a switching element capable of reversibly selecting a conducting state and an insulating state. 3. The matrix wiring board according to claim 1, wherein the element having a function of the electrical switch is a capacitor. 4. The matrix wiring board according to claim 1, wherein the element having the function of the electrical switch is a composite element in which a capacitor and a resistor are connected in parallel. 5. An element having the function of the electric switch is a switching element which becomes irreversibly turned on when a voltage of a certain voltage value or more is applied.
The matrix wiring board described. 6. The matrix wiring board according to claim 1, wherein the element having the function of the electric switch is a switching element which reversibly becomes conductive or insulated depending on a voltage value applied. 7. A first wiring group formed by a conductor on an insulating substrate, and a second wiring group formed by a conductor having an intersection electrically insulated from the first wiring group. A matrix wiring substrate including at least one end of one wiring of the first wiring group or at least one connecting portion of at least one end of a plurality of wirings.
One end side of each of the first switching elements is connected,
The matrix wiring board in which the other end side of the switching element is connected to the end of each wiring of the second wiring group directly or via the second switching element. 8. A switching element in which the first and / or the second switching element irreversibly changes from a conductive state to an insulating state and a switching element in which the insulating state changes irreversibly to a conductive state are connected in series. 8. The matrix wiring board according to claim 7, wherein at least two composite switching elements are connected in parallel. 9. A first wiring group formed of a conductor on an insulating substrate, and a second wiring group formed of a conductor having an intersection electrically insulated from the first wiring group. An element having a function of an electrical switch for direct current or alternating current at each end of each wiring forming at least one of the matrix wiring groups or at each connection portion of both ends of a plurality of wirings A matrix wiring board provided with. 10. The matrix wiring board according to claim 9, wherein the element having the function of the electrical switch is a switching element capable of reversibly selecting a conducting state and an insulating state. 11. The matrix wiring board according to claim 9, wherein the element having the function of the electrical switch is a switching element which irreversibly changes from an insulating state to a conducting state. 12. The matrix wiring board according to claim 9, wherein the element having the function of the electrical switch is an inductor. 13. The matrix wiring board according to claim 9, wherein the element having the function of the electrical switch is a resistor. 14. The matrix wiring board according to claim 9, wherein the element having the function of the electric switch is an element in which an inductor and a resistor are connected in series. 15. A first wiring group formed of a conductor on an insulating substrate, and a second wiring group formed of a conductor having an intersection electrically insulated from the first wiring group. A matrix wiring board composed of: each end of each wiring is connected to one electrode of a capacitor formed on the matrix wiring board, and the other electrode of the capacitor is connected to an equipotential path. Wiring board. 16. A first wiring group formed by a conductor on an insulating substrate, and a second wiring group formed by a conductor having an intersection electrically insulated from the first wiring group. A matrix wiring substrate having all of the matrix wirings having a resistance higher than that of the matrix wiring and having a resistance lower than the inter-wiring insulation resistance value at the intersection. A matrix wiring board that is connected by wiring. 17. A first wiring group formed by a conductor on an insulating substrate, and a second wiring group formed by a conductor having an intersection electrically insulated from the first wiring group. A matrix wiring board having a resistance higher than that of the matrix wiring, and a resistance lower than the inter-wiring insulation resistance value at the intersection. Are connected to each other by the resistance wiring, and both ends of each wiring of the matrix wiring are connected to one electrode of a capacitor formed on the matrix wiring substrate, and the other electrode of the capacitor is connected to an equipotential path. Matrix wiring board.