JP3162526B2 - Method for manufacturing active matrix type liquid crystal display element - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing an active matrix type liquid crystal display element, and more particularly to a method using a thin film transistor as a switching element.

[0002]

2. Description of the Related Art In recent years, liquid crystal display devices have been actively used as display elements for televisions, graphic displays, etc., taking advantage of features such as thinness and low power consumption.

[0003] Among them, a thin film transistor (Thin Film Tr)
An active matrix type liquid crystal display device using an anistor (hereinafter abbreviated as TFT) as a switching element,
It has excellent high-speed response and is suitable for increasing the number of pixels. It is expected to realize high image quality, large size, and color imaging of display screens. There is also.

A display element portion of the active matrix type liquid crystal display device generally includes an active element array substrate on which a switching active element such as a TFT and a pixel electrode connected thereto are disposed, and an active element array substrate opposed thereto. The main part is composed of an opposing substrate on which opposing electrodes are formed, a liquid crystal composition sandwiched between these substrates, and a polarizing plate stuck on the outer surface side of each substrate. .

FIG. 8 is a schematic cross-sectional view showing, as an example, a manufacturing process of an active matrix type liquid crystal display element using a conventional inverted stagger type TFT as a switching element, centering on the TFT array substrate.

First, as shown in FIG. 8A, a tantalum (Ta) film is formed on almost the entire surface of a transparent insulating substrate 801 by using, for example, a sputtering method, and scanning is performed by photoetching into a predetermined shape. Line 803 and gate electrode 8
After simultaneously forming the semiconductor device 05 and the conductive portion 807 integrally, the continuity of each scanning line is confirmed and a disconnection inspection is performed. Further, a short circuit between the adjacent scanning lines 803 may be inspected.

[0008] Next, as shown in FIG.
3 and a transparent insulating substrate 8 so as to cover the gate electrode 805.
01 over substantially the entire main surface.
_N.sub.x ) gate insulating film 809 is formed by plasma CVD.
It is formed using a method.

Next, an i-type amorphous silicon (hereinafter abbreviated as a-Si) film, SiN
_{After the x} film is continuously formed, the semiconductor layer 811 and the etching protection layer 81 are photo-etched into a predetermined shape.
Form 3

Subsequently, the n-type a-
Ohmic layers 815 and 817 are formed by forming a Si film and photoetching it into a predetermined shape.

Then, as shown in FIG. 8C, a pixel electrode 819 is formed by forming an ITO film by using, for example, a sputtering method and performing photo-etching into a predetermined shape.

Finally, as shown in FIG. 8D, after removing the gate insulating film 809 at the portion where the conductive portion 807 and the signal line 821 are short-circuited, an aluminum film is formed by, for example, a sputtering method. The drain electrode 823, the source electrode 825, and the signal line 821 are formed by photoetching into a predetermined shape. And signal line 8
By checking the continuity of the wires 21 one by one, the disconnection inspection is performed.

FIG. 9 is a partially omitted plan view of a TFT array substrate of such a liquid crystal display device. To prevent electrostatic breakdown of the gate insulating film 809 due to static electricity, all the scanning lines 8
03 and all the signal lines 821 are connected to a conductive portion 807 provided on the periphery of the transparent insulating substrate 801, that is, a so-called short ring. This is because, when the gate insulating film 809 is broken, the scanning line 803 and the signal line 821 are short-circuited at that portion and a line defect is generated in a display image, for example. It is necessary to prevent.

However, in such a method of manufacturing an active matrix type liquid crystal display element, all the scanning lines 803 and the signal lines 821 are short-circuited by one common conductive portion 807 during the manufacturing process of the TFT array substrate. Therefore, the continuity test and the short-circuit test of the scanning line 803 and the signal line 821 cannot be performed. In the above example, at least the short-circuit test of the signal line 821 cannot be performed.

Therefore, a TFT array substrate having a short-circuit defect of the scanning line 803 or the signal line 821 is brought to a later process than the TFT array substrate manufacturing process, such as a liquid crystal cell assembling process. As a result, the scanning lines 803 are completed until the liquid crystal display element is completed and actually displayed and inspected.
Since no defective connection or short-circuit defect of the signal line 821 is found, the defect rate of the liquid crystal display element at the stage of completion as a liquid crystal display element is high, and there is a problem that the production is wasteful and the production cost is high. .

[0015]

SUMMARY OF THE INVENTION The present invention has been made to solve such a problem. An object of the present invention is to conduct a continuity inspection and a short-circuit inspection of a scanning line or a signal line for each scanning line or a signal line manufacturing process, and to provide a TFT having a defect in the scanning line or the signal line early in the manufacturing process.
An object of the present invention is to find an array substrate, reduce a defective rate of a liquid crystal display element at a completed stage, avoid waste of production, and realize a reduction in production cost.

[0016]

According to a first aspect of the present invention, there is provided a method of manufacturing an active matrix type liquid crystal display device, comprising: forming a first wiring on one main surface of an insulating substrate; An insulating layer is formed thereon, a second wiring is formed via the insulating layer, a thin film transistor element connected to the first wiring and the second wiring is formed, and the thin film transistor element is connected to the thin film transistor element. An active matrix type in which a pixel electrode is formed to form an element array substrate, a counter substrate having a counter electrode is disposed on the element array substrate, and a liquid crystal composition is injected between the two substrates by sealing the periphery of both substrates. In the method for manufacturing a liquid crystal display element, a plurality of first wirings are formed, a first conductor is formed avoiding connection with the first wirings, and a first conductor is formed for each of the first wirings. Continuity test and side-by-side A short-circuit test between wires is performed to form a second conductor connected to the first wire via an electrical resistor and connected to the first conductor, and to intersect with the first wire. Forming a second wiring connected to the first conductor via an electric resistor and performing a continuity test for each second wiring and a short-circuit test between adjacent wirings. It is characterized by.

According to a second aspect of the present invention, there is provided a method of manufacturing an active matrix type liquid crystal display element, wherein a first wiring is formed on one principal surface of an insulating substrate, an insulating layer is formed, and a first wiring is formed with the insulating layer interposed therebetween. Forming an element array substrate, forming a thin film transistor element connected to the first wiring and the second wiring, forming a pixel electrode connected to the thin film transistor element, and forming an element array substrate. In a method of manufacturing an active matrix type liquid crystal display element in which a counter substrate having a counter electrode is disposed opposite to a substrate, a periphery of both substrates is sealed, and a liquid crystal composition is injected between the two substrates, Forming a plurality of first wirings having connection ends, and forming first conductive portions on three sides of a peripheral portion of the insulating substrate while avoiding connection with the connection ends; First wiring Performing a continuity test for each line and a short-circuit test between adjacent wires; forming an insulating film so as to cover the first wires and the conductive portion; A wiring part contact hole for exposing a connection end of the wiring, a conductive part contact hole for partially exposing the first conductive part, and an end contact hole for exposing an end of the first conductive part are formed. Forming an electrical resistor in the wiring portion contact hole and the conductive portion contact hole; disposing the electrical resistor in a manner intersecting with the first wire, and forming the electrical resistor through the conductive portion contact hole electrical resistor. Forming a second wiring connected to the first conductive part, connecting the second wiring to the first wiring via an electric resistor in the wiring part contact hole, and forming the end contact; Forming a second conductive portion connected to the first conductive portion with a tool, and performing a continuity test for each of the second wires and a short-circuit test between adjacent wires. It is characterized by having.

According to a third aspect of the invention, there is provided a method of manufacturing an active matrix type liquid crystal display element, wherein the electric resistor is made of the same material as the semiconductor layer used in the thin film transistor element in the first or second aspect. It is characterized by consisting of.

The resistance value of the electric resistor is such that static electricity generated on the insulating substrate can be conducted from the first wiring or the second wiring to the conductor, and the resistance value of the above-mentioned continuity test is determined. In this case, it is desirable that the resistance value is such that the current used for the continuity test can be suppressed so as not to increase. Further, it is preferable that the resistance value be lower than that of the interlayer insulating film so that the interlayer insulating film between the scanning line and the signal line is not broken due to static electricity generated on the insulating substrate.

As the electric resistor satisfying the above-mentioned condition of the resistance value, a semiconductor layer used for a normal TFT element is preferable. This is because the use of such a semiconductor layer can reduce the manufacturing cost.

[0021]

According to the TFT array substrate of the active matrix type liquid crystal display device of the present invention, during the manufacturing process, the scanning lines and signal lines as the first wiring and the second wiring are, for example, TF.
It is connected to a common conductive part consisting of a first conductive part and a second conductive part via an electric resistor made of a semiconductor layer of the same material as that used for the T element.

When a low voltage is applied to both ends of a scanning line or a signal line and an inspection current flows to perform a line defect inspection, the inspection current hardly flows through the electric resistor. Since the lines are in a state almost equivalent to the state where they are electrically insulated from each other, it is possible to conduct continuity inspection and short-circuit inspection of scanning lines, continuity inspection and short-circuit inspection of signal lines for each manufacturing process. it can. As a result, the continuity inspection and short-circuit inspection of the scanning lines and signal lines are performed, respectively, and a TFT array substrate having a defect in the scanning lines and signal lines is found early in the manufacturing process. And the manufacturing cost can be reduced by reducing the defective rate and avoiding waste of manufacturing.

Further, the electric resistor transfers the static electricity accumulated on the TFT array substrate to the first conductive portion and the second conductive portion.
Flow through the common conductive portion composed of the conductive portions of the above, the conductive portion can prevent electrostatic breakdown of an interlayer insulating film or the like interposed between the scanning line and the signal line, and reduce the yield of the TFT array substrate. The manufacturing cost can be reduced by improving the cost.

If the electric resistor is formed using the same material as the semiconductor layer used for the TFT element, a complicated process of separately forming the electric resistor can be avoided, and the manufacturing process can be simplified. It can be simplified.

[0025]

Embodiments of the present invention will be described below in detail with reference to the drawings.

Example 1 FIG. 1 shows an inverted stagger type TFT.
It is sectional drawing which shows the manufacturing process of the active matrix type liquid crystal display element which used the element as a switching element.
FIG. 1 mainly shows a TFT array substrate.
FIG. 2 is a partially omitted plan view showing a configuration of an active matrix type liquid crystal display device manufactured by the manufacturing method of the present invention. First, as shown in FIG. 1A, a film of, for example, tantalum (Ta) is formed on the entire surface of the transparent insulating substrate 101 by a sputtering method, and is photo-etched into a predetermined shape, so that the scanning line 103 and the gate are formed. Electrode 10
5. The first conductive portion 107 is formed.

FIG. 3 is a schematic plan view of the liquid crystal display device in the step shown in FIG. The first conductive portion 107 and the scanning line 103 are formed on the transparent insulating substrate 101 so as to avoid electrical connection. In this step, a short-circuit inspection of adjacent scanning lines 103 is performed. In addition, a continuity test of each scanning line 103 is performed. A substrate found to have a line defect by such an inspection is excluded from the process as a defective product, and is not put into subsequent processes. Alternatively, after applying laser repair to the defective part and eliminating the defect,
It will be introduced into the subsequent process as a good product.

The substrate which has been confirmed to have no line defect by the above inspection is put into the next step. In that step, the SiN is covered so as to cover almost the entire main surface of the transparent insulating substrate 101.
_A gate insulating film 109 made of an _x film is formed by using a plasma CVD method. 1 by the gate insulating film 109.
As shown in (b), the scanning line 103 and the gate electrode 10
5 is covered.

Subsequently, a conductive part contact hole 115 is formed at a position where the first conductive part 107 is connected to a signal line 111 formed in a later step, and a second conductive part 113 formed in a later step with the scanning line 103. A wiring contact hole 117 is formed at a position where the first conductive portion 107 and the second conductive portion 113 are connected, and an end contact hole 119 is formed at a position where the first conductive portion 107 and the second conductive portion 113 are connected.

Then, an i-type a
-Forming a Si film and photoetching it into a predetermined shape to form a semiconductor layer 123 of the TFT element 121;
And an electric resistor 125 is formed in each of the contact holes. Thus, the TFT element 121
Since the same semiconductor film as the semiconductor layer 123 used for the above is used as the electric resistor 125, it is possible to avoid adding a complicated step of separately forming the electric resistor 125.

Subsequently, as shown in FIG. 1C, a channel protective film 127 is formed by forming a SiN _x film by a plasma CVD method and photoetching the SiN _x film into a predetermined shape. Similarly, by plasma CVD, n
A mold a-Si film is formed and photo-etched into a predetermined shape to form ohmic contact layers 129 and 131. At this time, the connection member 1 made of the same film as the ohmic contact layers 129 and 131 is also provided in each contact hole.
33 is also provided.

After that, as shown in FIG. 1D, a pixel electrode 135 is formed by, for example, forming an ITO film by a sputtering method and photo-etching it into a predetermined shape.

Then, as shown in FIG. 1E, for example, an aluminum film is formed by a sputtering method and photoetched into a predetermined shape to form a drain electrode 137, a source electrode 139, and a signal line 111. Second
Is formed. This second conductive portion 113
Is connected to the scanning line 103 at the wiring contact hole 117 via the electric resistor 125 and the connection member 133, and is connected to the first conductive portion 107 at the end contact hole 11.
At 9, connection is made via the connection member 133. Signal line 1
11 and the first conductive part 107 are the conductive part contact hole 1
At 15, the connection is made via the electric resistor 125 and the connection member 133.

In this manner, the first conductive portion 107 and the second conductive portion 113 form the conductive portion 141. The conductive portion 141 absorbs static electricity on the transparent insulating substrate 101 to cause electrostatic breakdown of the TFT element 121 or an interlayer insulating film such as a gate insulating film 109 interposed between the scanning line 103 and the signal line 111. Can be prevented from being electrostatically damaged.

Then, a line defect inspection of the signal line 111 is performed, and a continuity inspection of each of the lines and a short-circuit inspection of adjacent wirings are performed.

The TFT array substrate 143 of the liquid crystal display element thus formed has a configuration as shown in a partially omitted plan view of FIG. A TFT element 121 is provided at each intersection between the scanning line 103 and the signal line 111. The TFT element 121 includes a scanning line 103 and a signal line 111.
It is connected to the. Further, a pixel electrode 135 made of a transparent conductive film connected to each of the TFT elements 121 is provided. Then, all scanning lines 103 and all signal lines 111
Is connected to the conductive portion 141 via an electric resistor 125 made of a semiconductor film.

FIG. 4 is a simplified equivalent circuit diagram of the TFT array substrate 143 of the liquid crystal display element manufactured as described above.

Rg is the electric resistance per one scanning line 103, Rs is the electric resistance per one signal line 111, Rc
Is the electric resistance of each electric resistor 125. Rc is much larger than Rg and Rs.

In the manufacturing process of the TFT array substrate as described above, when performing a line defect inspection of the scanning line 103,
At the time shown in FIGS. 1A and 3, the scanning lines 103 are electrically separated one by one. Therefore, for example, a continuity (disconnection) test can be performed by checking the continuity between a and a, and a short-circuit test can be performed by checking the continuity between the points a and x.

On the other hand, when the line defect inspection of the signal line 111 is performed, the signal line 11 is formed at the time when the signal line 111 is formed.
1 is short-circuited by the conductive portion 141 via an electric resistor 125 made of the same material as the semiconductor film 123.
Therefore, the continuity test of the signal line 111 can be performed by, for example, checking the continuity between the cds. In addition, a short circuit test between adjacent signal lines 111 can be performed by measuring, for example, an electrical resistance value between yz. Where c
The point is, specifically, the inspection terminal 145 as shown in FIG.
It is. A probe electrode (inspection electrode) is brought into contact with the inspection terminal 145 to flow an inspection current. The reason why such an inspection terminal 145 is used is to make it easier to inspect the signal line 111 and the scanning line 103 having a fine pitch and a fine line width.

When the adjacent signal lines Xy and Xz are not short-circuited, the measured resistance Ryz is Rc + R
s. However, when the signal line Xy and the signal line Xz are short-circuited, the measured resistance value Ryz has a value represented by the following equation. That is, when Rc >> Rx ≧ Rs, Ryz〜Rc / 2, and when Rc >> Rs, Rx >> Rs, Ryz〜Rc × (2 /
3) When the measured resistance value Ryz is as described above, it is found that the adjacent signal lines Xy and Xz are short-circuited.

When a high voltage due to static electricity is applied to the array substrate, the scanning line 103 and the signal line 111 are electrically connected to the conductive portion 141 via the electric resistor 125, so that the high voltage Current flows into the conductive portion 141 via the electric resistor 125, and the electrostatic breakdown of the TFT element 121 and the electrostatic breakdown of the interlayer insulating film such as the gate insulating film 109 can be prevented.

The resistance value R of the electric resistor 125 is
c is the gate insulating film 1 as the interlayer insulating film described above.
It is necessary to have a conductivity smaller than the resistance value Ri of 09 and sufficient to allow static electricity accumulated in the TFT array substrate 143 to flow.

Materials satisfying such conditions include T
The semiconductor film used for the semiconductor layer 123 of the FT element 121 is preferable. When the semiconductor film forming the semiconductor layer 123 is used as the electric resistor 125, a complicated process of separately forming the electric resistor 125 can be avoided and the manufacturing process can be simplified. preferable.

In each contact hole, an electric resistor 125 is provided without the connection member 133, and the conductive portion 141 is directly connected to the scanning line 103 or the signal line 111 by the electric resistor 125. Needless to say, this may be done.

(Embodiment 2) As a second embodiment, a method of manufacturing an active matrix type liquid crystal display device using a forward stagger type TFT device as a switching device will be described. FIG. 5 is a sectional view showing a manufacturing process of the TFT array substrate.

First, as shown in FIG. 5A, an insulating film 203 made of a SiN _x film is formed on almost the entire main surface of the transparent insulating substrate 201 by using a plasma CVD method. Then, for example, an aluminum film is formed by a sputtering method and is photo-etched into a predetermined shape, and is used as a first wiring as a signal line 205, a drain electrode 207 integrated with the signal line 205, a source electrode 209, and a first conductive film. 211 is formed.

FIG. 6 is a partially omitted plan view showing a schematic configuration of the liquid crystal display element in the step shown in FIG. A plurality of signal lines 205 are formed on the transparent insulating substrate 201 so as to be electrically insulated from each other. In this process,
A continuity test for each signal line 205 as a first wiring and a short-circuit test for adjacent signal lines 205 are performed. Here, the substrate that has been confirmed to be a non-defective product having no line defect in the signal line 205 is supplied to the next step. The substrate found to have the line defect is not put into the following steps. Alternatively, after correcting the defective portion, the defective portion may be supplied to the next process as a non-defective product.

As shown in FIG. 5B, plasma CVD
The ohmic contact layers 213 and 215 are formed by forming an n-type a-Si film by a method and photoetching the film into a predetermined shape. In addition, a semiconductor layer 217 is formed by forming an i-type amorphous silicon (a-Si) film using a plasma CVD method and photoetching the film into a predetermined shape. At this time, a connection member 219 made of the same film as the ohmic contact layers 213 and 215 and an electric resistor 221 made of the same film as the semiconductor layer 217 are formed by photoetching also in a portion corresponding to each contact hole formed in a later step. I do. However, the electric resistor 221 is not provided at the end of the first conductive portion 211.

Thereafter, as shown in FIG. 5C, a pixel electrode 223 is formed by, for example, forming an ITO film by a sputtering method and photoetching it into a predetermined shape. Then, a SiN _x film is formed using a plasma CVD method so as to cover almost the entire main surface of the transparent insulating substrate 201, and a gate insulating film 225 is formed.

Subsequently, as shown in FIG. 5D, a conductive portion contact hole 229 is formed at a position where the first conductive film 211 is connected to the scanning line 227 to be formed thereafter, and the signal line 205 and a conductive line contact hole 229 are formed after the conductive film. A wiring contact hole 233 is provided at a location where the second conductive film 231 is formed, and an end contact hole 235 is provided at a location where the first conductive film 211 and the second conductive film 231 are connected. Si of the place
The _Nx film is formed by photoetching.

Then, for example, a film of tantalum (Ta) is formed by a sputtering method, and the film is photo-etched into a predetermined shape. As a second wiring, the scanning line 227, the gate electrode 237 formed integrally with the scanning line 227, the second wiring A conductive film 231 is formed. Thus, the first conductive portion 211 and the second
The conductive part 239 is formed by the conductive part 231 of FIG. The conductive portion 239 absorbs static electricity on the transparent insulating substrate 201, and causes the electrostatic breakdown of the TFT element 241 and the scanning line 22.
Gate insulating film 225 interposed between signal line 7 and signal line 205
It is possible to prevent electrostatic breakdown of the interlayer insulating film and the like.

The schematic configuration of the TFT array substrate of the liquid crystal display element formed as described above is shown in a partially omitted plan view of FIG.

Then, the scanning line 2 as a second wiring
A line defect inspection of 27 lines is performed, and a continuity inspection for each line and a short-circuit inspection between adjacent wirings are performed. Since the active matrix type liquid crystal display element of the second embodiment is also electrically similar in configuration to the equivalent circuit diagram of FIG. 4 described in the first embodiment, the line defect inspection of the scanning line 227 is carried out in the second embodiment. 1
This can be performed in the same manner as the signal line 111 as the second wiring in the embodiment.

Further, during the manufacturing process, the signal line 205 and the scanning line 227 are connected by the conductive portion 239 and are protected from the electrostatic breakdown caused by the generated static electricity. And the gate insulating film 22
5 can prevent electrostatic breakdown of the interlayer insulating film and the like.

The present invention is not limited to only the above embodiments. In addition, it goes without saying that, for example, the material of the semiconductor layer used for the TFT element can be variously changed without departing from the gist of the present invention.

[0057]

As described above in detail, according to the method of manufacturing an active matrix type liquid crystal display element of the present invention, the continuity inspection of the scanning line and the signal line is performed for each manufacturing step of the scanning line and the signal line. And short-circuit inspection, respectively, to detect a defect in a scanning line or a signal line early in the manufacturing process.
By finding the FT array substrate, the defective rate of the liquid crystal display element at the time of completion can be reduced, the production waste can be avoided, and the production cost can be reduced.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a manufacturing process of an array substrate of an active matrix type liquid crystal display element according to a first embodiment of the present invention.

FIG. 2 is a partially omitted plan view showing a schematic configuration of an array substrate of the active matrix type liquid crystal display element according to the first embodiment of the present invention.

FIG. 3 is a partially omitted plan view showing a schematic configuration of an array substrate of the active matrix type liquid crystal display element according to the first embodiment of the present invention at the time when scanning lines are formed.

FIG. 4 is an equivalent circuit diagram showing an electrical schematic configuration of an array substrate of an active matrix type liquid crystal display element according to the first and second embodiments of the present invention.

FIG. 5 is a sectional view showing a manufacturing process of an array substrate of an active matrix type liquid crystal display element according to a second embodiment of the present invention.

FIG. 6 is a partially omitted plan view showing a schematic configuration of an active matrix type liquid crystal display device according to a second embodiment of the present invention when signal lines are formed on an array substrate.

FIG. 7 is a partially omitted plan view showing a schematic configuration of an array substrate of an active matrix type liquid crystal display element according to a second embodiment of the present invention.

FIG. 8 is a cross-sectional view showing a manufacturing process of an array substrate of a conventional active matrix type liquid crystal display element.

FIG. 9 is a partially omitted plan view showing a schematic configuration of an array substrate of a conventional active matrix type liquid crystal display element.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 101 ... Transparent insulating substrate, 103 ... Scan line, 105 ... Gate electrode, 107 ... First conductive part, 109 ... Gate insulating film, 111 ... Signal line, 113 ... Second conductive part, 121 ...
TFT element, 123: semiconductor layer, 125: electric resistor,
135 ... pixel electrode, 141 ... conductive part, 143 ... TFT element substrate

Claims (3)

(57) [Claims] 1. A first wiring is formed on one main surface of an insulating substrate, an insulating layer is formed thereon, and a second wiring is formed on the insulating layer. A thin film transistor element connected to the second wiring is formed, a pixel electrode connected to the thin film transistor element is formed, a thin film transistor element array substrate is formed, and a counter substrate having a counter electrode on the substrate is disposed to face the both substrates. A method of manufacturing an active matrix type liquid crystal display device in which a liquid crystal composition is injected between both substrates by sealing the periphery of the substrate, forming a plurality of first wirings and avoiding connection with the first wirings. Forming a first conductor by conducting a continuity test for each of the first wirings and a short-circuit test between adjacent wirings, and connecting the first wirings to the first wirings via an electric resistor;
Forming a second conductor connected to the first conductor, and forming a second wire disposed to intersect the first wire and connected to the first conductor via an electric resistor. And performing a continuity test for each of the second wirings and a short-circuit test between adjacent wirings. 2. A method according to claim 1, wherein a first wiring is formed on one main surface of the insulating substrate, an insulating layer is formed, a second wiring is formed across the insulating layer, and the first wiring and the second wiring are formed. A thin film transistor element connected to the wiring is formed, a pixel electrode connected to the thin film transistor element is formed, an element array substrate is formed, and a counter substrate having a counter electrode is disposed on the substrate so as to face each other. A liquid crystal composition is injected between the two substrates by sealing the first substrate and the second substrate.
Forming a first conductive portion on three sides of a peripheral portion of the insulating substrate while avoiding connection with the connection end, and conducting a continuity test for each of the first wires. Performing a short-circuit test between adjacent wirings; forming an insulating film so as to cover the first wiring and the conductive portion; and a wiring portion exposing a connection end of the first wiring. Forming a contact hole and a conductive part contact hole for partially exposing the first conductive part and an end contact hole for exposing an end of the first conductive part in the insulating film; Forming an electrical resistor in the contact hole and the conductive portion contact hole; and arranging the electrical resistor crossing the first wiring and connecting to the first conductive portion via the electrical resistor in the conductive portion contact hole. To form a second wiring, the wiring part through the electrical resistance of the contact hole is connected to the first wiring, and the first at the end contact hole
Forming a second conductive portion connected to the conductive portion, and performing a continuity test for each of the second wires and a short-circuit test between adjacent wires. A method for manufacturing an active matrix liquid crystal display device. 3. The method for manufacturing an active matrix liquid crystal display device according to claim 1, wherein said electric resistor is made of the same material as a semiconductor layer used for said thin film transistor device.