JPH06222389A - Production of active matrix type liquid crystal display element - Google Patents

Abstract

PURPOSE:To reduce a fraction defective of a liquid crystal display element at the step of completion and to reduce a production cost by finding defective TFT array substrates having defects at the early step of production process by executing continuity inspections and short-circuit inspections at every production process of scanning lines and signal lines. CONSTITUTION:In a TFT array substrate 143, the scanning line 103 and the signal line 111 are connected with a common conductive part 141 composed of a first conductive part 107 and a second conductive part 113 via an electrical resistor composed of a semiconductor layer consisting of the same material as, for example, material used for a TFT element 121. Thus, when an inspection current is charged by applying a low voltage at both ends of the scanning line 103 or the signal line 111, the inspection current hardly flows through the electric resistor and the scanning line 103 and the signal line 111 are in the equivalent condition to being insulated. Consequently, the inspection of the scanning line 103 and the inspection of the signal line 111 can be executed respectively at respective production processes.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing an active matrix type liquid crystal display device, and more particularly to a device using a thin film transistor as a switching device.

[0002]

2. Description of the Related Art In recent years, liquid crystal display devices have been widely used as display elements for televisions, graphic displays, etc., by taking advantage of their features such as thinness and low power consumption.

Among them, a thin film transistor (Thin Film Tr
An active matrix type liquid crystal display device using an ansistor (hereinafter abbreviated as TFT) as a switching element is
It has excellent high-speed responsiveness and is suitable for increasing the number of pixels, and is expected to realize high image quality, large size, and color imaging of display screens, which has been researched and developed and is already in practical use. There is also.

The display element portion of this active matrix type liquid crystal display device is generally an active element array substrate provided with a switching active element such as a TFT and a pixel electrode connected thereto, and an active element array substrate opposed thereto. A main part is composed of a counter substrate having counter electrodes formed thereon, a liquid crystal composition sandwiched between these substrates, and a polarizing plate attached to the outer surface side of each substrate. .

As an example, FIG. 8 is a schematic sectional view showing a manufacturing process of an active matrix type liquid crystal display element using a conventional inverted stagger type TFT as a switching element, focusing on the TFT array substrate.

First, as shown in FIG. 8A, a film of tantalum (Ta) is formed on almost the entire surface of a transparent insulating substrate 801, for example, by a sputtering method, and photoetched into a predetermined shape to perform scanning. Line 803 and gate electrode 8
05 and the conductive portion 807 are integrally formed at the same time, the continuity of each scanning line is confirmed and a disconnection inspection is performed. In addition, a short circuit between adjacent scan lines 803 may be inspected.

Next, as shown in FIG. 8B, the scanning line 80
3 and the gate electrode 805 so as to cover the transparent insulating substrate 8
01 is almost entirely covered with silicon nitride (Si
The gate insulating film 809 made of N _x ) film is formed by plasma CVD.
It is formed using the method.

Next, using a plasma CVD method, an i-type amorphous silicon (hereinafter abbreviated as a-Si) film and SiN are formed.
_{After the x} film is continuously formed, the semiconductor layer 811 and the etching protection layer 81 are formed by photoetching into a predetermined shape.
3 is formed.

Then, an n-type a-is formed by a plasma CVD method.
By forming a Si film and photoetching it into a predetermined shape, ohmic layers 815 and 817 are formed.

Then, as shown in FIG. 8C, an ITO film is formed by using, for example, a sputtering method and photoetched into a predetermined shape to form a pixel electrode 819.

Finally, as shown in FIG. 8D, after removing the gate insulating film 809 in the portion which short-circuits the conductive portion 807 and the signal line 821, an aluminum film is formed by using, for example, a sputtering method. The drain electrode 823, the source electrode 825, and the signal line 821 are formed by photoetching into a predetermined shape. And signal line 8
By confirming the continuity of each 21 wire, the disconnection inspection is performed.

FIG. 9 is a partially omitted plan view of a TFT array substrate of such a liquid crystal display element. In order to prevent electrostatic breakdown of the gate insulating film 809 due to static electricity, all scanning lines 8
03 and all signal lines 821 are connected to a conductive portion 807, which is a so-called short ring, provided on the peripheral portion of the transparent insulating substrate 801. This is because when the gate insulating film 809 is broken, the scanning line 803 and the signal line 821 are short-circuited at that portion and a line defect occurs in the display image. Is what is needed to prevent.

However, in such a method of manufacturing an active matrix type liquid crystal display device, all the scanning lines 803 and the signal lines 821 are short-circuited by one common conductive portion 807 during the manufacturing process of the TFT array substrate. Therefore, the scan line 803 and the signal line 821 cannot be tested for continuity or short circuit. In the above example, at least the short circuit inspection of the signal line 821 is impossible.

Therefore, a TFT array substrate having a short circuit defect of the scanning line 803 or the signal line 821 is brought to a step subsequent to the TFT array substrate manufacturing step, such as a liquid crystal cell assembling step. As a result, the scan line 803 is completed until the liquid crystal display device is completed and actually displayed and inspected.
Since a conduction defect or a short circuit defect of the signal line 821 is not found, the defect rate of the liquid crystal display element at the stage of completing the liquid crystal display element is high, and there is a problem that the manufacturing is wasteful and the manufacturing cost is high. .

[0015]

The present invention has been made to solve such a problem. An object of the present invention is to perform a continuity inspection and a short circuit inspection of a scanning line or a signal line for each manufacturing process of the scanning line or the signal line, and to provide a TFT having a defect in the scanning line or the signal line early in the manufacturing process.
By finding the array substrate, it is possible to reduce the defective rate of the liquid crystal display element at the completed stage, avoid the waste of manufacturing, and realize the reduction of manufacturing cost.

[0016]

In order to achieve the above object, a method of manufacturing an active matrix type liquid crystal display device according to the first invention comprises forming a first wiring on one main surface of an insulating substrate, An insulating layer is formed thereon, a second wiring is formed across the insulating layer, a thin film transistor element connected to the first wiring and the second wiring is formed, and the thin film transistor element is connected to the thin film transistor element. An active matrix type in which a pixel electrode is formed to form an element array substrate, a counter substrate having a counter electrode is arranged to face the element array substrate, the periphery of both substrates is sealed, and a liquid crystal composition is injected between both substrates. In the method of manufacturing a liquid crystal display element, a plurality of first wirings are formed, and a first conductor is formed while avoiding connection with the first wirings, and each of the first wirings is formed. Continuity check and adjacency A short circuit between wires is inspected to form a second conductor connected to the first wire via an electric resistor and connected to the first conductor, and at the same time, intersecting the first wire. Second wiring that is connected to the first conductor via an electric resistor and is subjected to a continuity inspection for each second wiring and a short-circuit inspection between adjacent wirings. Is characterized by.

According to the method of manufacturing an active matrix type liquid crystal display element of the second invention, the first wiring is formed on one main surface of the insulating substrate, the insulating layer is formed, and the insulating layer is separated. 2 wirings are formed, a thin film transistor element connected to the first wiring and the second wiring is formed, a pixel electrode connected to the thin film transistor element is formed to form an element array substrate, and this element array is formed. In a method of manufacturing an active matrix type liquid crystal display device, in which a counter substrate having a counter electrode is arranged to face each other, the periphery of both substrates is sealed, and a liquid crystal composition is injected between the two substrates, Forming a plurality of first wirings each having a connecting end portion and forming a first conductive portion on three sides of a peripheral portion of the insulating substrate while avoiding connection with the connecting end portion; First wiring A step of conducting a continuity test for each line and a short circuit test between adjacent wirings; a step of forming an insulating film so as to cover the first wirings and the conductive portion; A wiring portion contact hole for exposing a connection end portion of a wiring, a conductive portion contact hole for partially exposing the first conductive portion, and an end portion contact hole for exposing an end portion of the first conductive portion are formed. A step of forming an electric resistor in the wiring portion contact hole and the conductive portion contact hole; and a step of forming an electric resistor in the wiring portion contact hole and the conductive portion contact hole, the electric resistor being disposed through the electric resistor of the conductive portion contact hole. Forming a second wiring connected to the first conductive portion, connecting to the first wiring through an electric resistor of the wiring portion contact hole, and the end contact; A second conductive portion connected to the first conductive portion with a tool, and a step of conducting a continuity inspection for each of the second wirings and a short circuit inspection between adjacent wirings. It is characterized by having.

Further, a method for manufacturing an active matrix type liquid crystal display element according to a third aspect of the invention is the same material as the semiconductor layer used for the thin film transistor element in the electric resistor in the first aspect or the second aspect. It is characterized by consisting of.

As the resistance value of the electric resistor, the static electricity generated on the insulating substrate can be conducted from the first wiring or the second wiring to the conductor, and the resistance of the above-mentioned continuity test can be obtained. At this time, it is desirable that the resistance value be such that the current used for the continuity test can be suppressed so as not to increase. Furthermore, it is desirable that the resistance value is lower than that of the interlayer insulating film so that the interlayer insulating film such as between the scanning line and the signal line is not destroyed due to static electricity generated on the insulating substrate.

As the electric resistor satisfying the above resistance value condition, a semiconductor layer used in a normal TFT element is suitable. This is because the manufacturing cost can be reduced by using such a semiconductor layer.

[0021]

In the TFT array substrate of the active matrix type liquid crystal display element of the present invention, the scanning line and the signal line as the first wiring and the second wiring are, for example, TF during the manufacturing process.
It is connected to a common conductive portion composed of a first conductive portion and a second conductive portion via an electric resistor made of a semiconductor layer made of the same material as that used for the T element.

Thus, when a low voltage is applied to both ends of the scanning line or the signal line to inspect a line defect by inspecting the line defect, the inspection current hardly flows through the electric resistor, so that the scanning line and the signal line are not in contact with each other. Since it is almost equivalent to a state in which it is electrically insulated from each other, it is possible to perform a scan line continuity inspection and a short circuit inspection, and a signal line continuity inspection and a short circuit inspection for each manufacturing process. it can. Thus, the conduction inspection and the short circuit inspection of the scanning lines and the signal lines are performed, respectively, and the TFT array substrate having the defects in the scanning lines and the signal lines is found in the early stage of the manufacturing process. The manufacturing cost can be reduced by reducing the defective rate of the manufacturing process and avoiding the waste of manufacturing.

In addition, the electric resistor is configured to transfer the static electricity accumulated in the TFT array substrate to the first conductive portion and the second conductive portion.
Since it flows to the common conductive part composed of the conductive parts of the above, it is possible to prevent electrostatic breakdown of the interlayer insulating film or the like interposed between the scanning line and the signal line by this conductive part, and to improve the yield of the TFT array substrate. It is possible to improve the manufacturing cost and reduce the manufacturing cost.

If the electric resistor is formed by using the same material as the semiconductor layer used for the TFT element, it is possible to avoid the complicated process of separately forming the electric resistor, and the manufacturing process is improved. It can be simplified.

[0025]

Embodiments of the present invention will now be described in detail with reference to the drawings.

(Embodiment 1) FIG. 1 shows an inverted stagger type TFT.
FIG. 6 is a cross-sectional view showing a manufacturing process of an active matrix liquid crystal display element using the element as a switching element.
FIG. 1 mainly shows the TFT array substrate.
FIG. 2 is a partially omitted plan view showing the structure of an active matrix type liquid crystal display device manufactured by the manufacturing method of the present invention. First, as shown in FIG. 1A, a film of, for example, tantalum (Ta) is formed on the entire surface of a transparent insulating substrate 101 by a sputtering method, and photoetching is performed into a predetermined shape to scan lines 103 and gates. Electrode 10
5, the first conductive portion 107 is formed.

FIG. 3 is a schematic plan view of the liquid crystal display element in the step shown in FIG. A first conductive portion 107 and a scanning line 103 are formed on the transparent insulating substrate 101 while avoiding electrical connection. At the stage of this step, a short circuit inspection of adjacent scanning lines 103 is performed. In addition, a continuity test is performed on each scanning line 103. A substrate that is found to have a line defect by such inspection is excluded from the process as a defective product and is not put into the subsequent processes. Or after applying laser repair to the defective part to eliminate the defect,
It is put into the subsequent process as a good product.

The substrate confirmed to have no line defect by the above inspection is put into the next step. In that step, SiN is formed so as to cover almost the entire main surface of the transparent insulating substrate 101.
_The gate insulating film 109 made of the _x film is formed by using the plasma CVD method. With this gate insulating film 109, FIG.
As shown in (b), the scanning line 103 and the gate electrode 10
The top of 5 is covered.

Subsequently, a conductive portion contact hole 115 is formed at a place where the first conductive portion 107 and a signal line 111 formed in a later step are connected, and a second conductive portion 113 formed in a later step with the scan line 103. A wiring portion contact hole 117 is formed at a location where connection is made with the end portion, and an end contact hole 119 is provided at a location where connection between the first conductive portion 107 and the second conductive portion 113 is formed.

Then, an i-type a is formed by using the plasma CVD method.
By forming a -Si film and photoetching it into a predetermined shape, the semiconductor layer 123 of the TFT element 121 is formed.
And the electric resistor 125 is formed in each of the contact holes. In this way, the TFT element 121
Since the same semiconductor film as the semiconductor layer 123 used in the above is used as the electric resistor 125, it is possible to avoid adding a complicated step of separately forming the electric resistor 125.

Subsequently, as shown in FIG. 1C, a channel protection film 127 is formed by forming a SiN _x film by a plasma CVD method and photoetching it into a predetermined shape. Similarly, by plasma CVD method, n
A type a-Si film is formed and photoetched into a predetermined shape to form ohmic contact layers 129 and 131. At this time, the connection member 1 made of the same film as the ohmic contact layers 129 and 131 is also formed in each contact hole.
33 is also provided.

Thereafter, as shown in FIG. 1D, for example, an ITO film is formed by a sputtering method and photoetched into a predetermined shape to form a pixel electrode 135.

Then, as shown in FIG. 1E, for example, an aluminum film is formed by sputtering and photoetched into a predetermined shape to form a drain electrode 137, a source electrode 139, and a signal line 111. Second
The conductive portion 113 of is formed. This second conductive portion 113
Is connected to the scanning line 103 at the wiring portion contact hole 117 via the electric resistor 125 and the connecting member 133, and is connected to the first conductive portion 107 at the end contact hole 11.
9 is connected via the connecting member 133. Signal line 1
11 and the first conductive portion 107 are conductive portion contact holes 1
At 15, the electric resistor 125 and the connecting member 133 are connected.

In this way, the conductive portion 141 is formed by the first conductive portion 107 and the second conductive portion 113. The conductive portion 141 absorbs static electricity on the transparent insulating substrate 101 to electrostatically destroy the TFT element 121, an interlayer insulating film such as the gate insulating film 109 interposed between the scanning line 103 and the signal line 111, and the like. The electrostatic breakdown of can be prevented.

Then, a line defect inspection of the signal line 111 is performed, and a continuity inspection for each one and a short circuit inspection for adjacent wirings are performed.

The TFT array substrate 143 of the liquid crystal display element thus formed has a structure as shown in the partially omitted plan view of FIG. A TFT element 121 is provided at each intersection of the scanning line 103 and the signal line 111. The TFT element 121 includes a scanning line 103 and a signal line 111.
It is connected to the. Further, a pixel electrode 135 made of a transparent conductive film is provided for each TFT element 121. Then, all scanning lines 103 and all signal lines 111
Are connected to the conductive portion 141 via the electric resistor 125 made of a semiconductor film.

FIG. 4 shows a simplified equivalent circuit diagram of the TFT array substrate 143 of the liquid crystal display element manufactured as described above.

Rg is the electrical resistance per scanning line 103, Rs is the electrical resistance per signal line 111, Rc
Is the electric resistance of each electric resistor 125. Rc is much larger than Rg and Rs.

In the manufacturing process of the TFT array substrate as described above, when the line defect inspection of the scanning line 103 is performed,
At the time of the state shown in FIGS. 1A and 3, the scanning lines 103 are electrically separated one by one. Therefore, for example, the conduction (disconnection) inspection can be performed by observing the conduction between ab and the short circuit inspection can be performed by observing the conduction between the points a and x.

On the other hand, when the line defect inspection of the signal line 111 is performed, the signal line 11 is formed when the signal line 111 is formed.
1 is short-circuited by the conductive portion 141 via the electric resistor 125 made of a film made of the same material as the semiconductor film 123.
Therefore, the continuity inspection of the signal line 111 can be performed by, for example, inspecting the continuity between cd. The short circuit inspection between the adjacent signal lines 111 can be performed by measuring the electric resistance value between yz, for example. Where c
Specifically, the point means an inspection terminal 145 as shown in FIG.
Is. A probe electrode (inspection electrode) is brought into contact with the inspection terminal 145 to pass an inspection current. The reason why the inspection terminals 145 are used is to make it easier to inspect the signal lines 111 and the scanning lines 103 having a fine pitch and a fine line width.

When the adjacent signal line Xy and signal line Xz are not short-circuited, the measured resistance value Ryz is Rc + R.
s. However, when the signal line Xy and the signal line Xz are short-circuited, the measured resistance value Ryz becomes the value shown in the following equation. That is, when Rc >> Rx ≧ Rs, Ryz to Rc / 2, and when Rc >> Rs and Rx >> Rs, Ryz to Rc × (2 /
3) When the measured resistance value Ryz is the above value, it is found that the adjacent signal line Xy and signal line Xz are short-circuited.

Further, when a high voltage due to static electricity is applied to the array substrate, the scanning line 103 and the signal line 111 are electrically connected to the conductive portion 141 through the electric resistor 125. The current caused by the flow into the conductive portion 141 via the electric resistor 125 can prevent electrostatic breakdown of the TFT element 121 and electrostatic breakdown of an interlayer insulating film such as the gate insulating film 109.

The resistance value R of the electric resistor 125 described above.
c is the gate insulating film 1 as the above-mentioned interlayer insulating film.
It is necessary that the resistance value is smaller than the resistance value Ri of 09 and has sufficient conductivity to allow the static electricity accumulated in the TFT array substrate 143 to flow.

As a material satisfying such a condition, T
The semiconductor film used for the semiconductor layer 123 of the FT element 121 is suitable. When the semiconductor film forming the semiconductor layer 123 is used as the electric resistor 125 as described above, a complicated process of separately forming the electric resistor 125 can be avoided and the manufacturing process can be simplified. preferable.

Further, in each contact hole, the connecting member 133 is omitted and an electric resistor 125 is disposed, and the electric resistor 125 directly connects the conductive portion 141 to the scanning line 103 or the signal line 111. It goes without saying that you can do so.

Example 2 As a second example, a method of manufacturing an active matrix type liquid crystal display element using a forward stagger type TFT element as a switch element will be described. FIG. 5 is a cross-sectional view showing the manufacturing process of the TFT array substrate.

First, as shown in FIG. 5A, an insulating film 203 made of a SiN _x film is formed on the entire main surface of the transparent insulating substrate 201 by plasma CVD. Then, for example, an aluminum film is formed by a sputtering method and photoetched into a predetermined shape to form a signal line 205 as a first wiring, a drain electrode 207 integrally formed with the signal line 205, a source electrode 209, and a first conductive film. 211 is formed.

FIG. 6 is a partially omitted plan view showing the schematic structure of the liquid crystal display element in the step shown in FIG. A plurality of signal lines 205 are electrically insulated and formed on the transparent insulating substrate 201. In this process,
A continuity test is performed on each signal line 205 as the first wiring and a short circuit test is performed on adjacent signal lines 205. The substrate confirmed to be a non-defective product having no line defect in the signal line 205 is put into the next step. The substrate which has been found to have line defects is not put into the following steps. Alternatively, after correcting the defective portion, it may be put into the next step as a non-defective product.

As shown in FIG. 5B, plasma CVD
Then, an n-type a-Si film is formed by a method and photoetched into a predetermined shape to form ohmic contact layers 213 and 215. Further, a semiconductor layer 217 is formed by forming a film of i-type amorphous silicon (a-Si) by using a plasma CVD method and photoetching it into a predetermined shape. At this time, a connection member 219 made of the same film as the ohmic contact layers 213 and 215 and an electric resistor 221 made of the same film as the semiconductor layer 217 are formed by photoetching also in the portions corresponding to the contact holes formed in the subsequent process. To do. However, the electric resistor 221 is not provided at the end of the first conductive portion 211.

Thereafter, as shown in FIG. 5C, for example, an ITO film is formed by a sputtering method and photoetched into a predetermined shape to form a pixel electrode 223. Then, a SiN _x film is formed by plasma CVD so as to cover almost the entire main surface of the transparent insulating substrate 201 to form a gate insulating film 225.

Subsequently, as shown in FIG. 5D, a conductive portion contact hole 229 is formed at a place where the first conductive film 211 is connected to a scanning line 227 formed thereafter, and a conductive line contact hole 229 and a signal line 205 are formed thereafter. A wiring portion contact hole 233 is formed at a place where the second conductive film 231 to be formed is connected, and an end contact hole 235 is formed at a place where the first conductive film 211 and the second conductive film 231 are formed. Si at that location
The N _x film is formed by photoetching.

Then, for example, tantalum (Ta) is deposited by a sputtering method and photoetched into a predetermined shape, and the scan line 227 as the second wiring, the gate electrode 237 integrally formed with the scan line 227, and the second line. The conductive film 231 is formed. In this way, the first conductive portion 211 and the second conductive portion 211
The conductive portion 231 forms a conductive portion 239. This conductive portion 239 absorbs static electricity on the transparent insulating substrate 201, electrostatic breakdown of the TFT element 241, and scanning line 22.
7 and the signal line 205 are interposed between the gate insulating film 225
It is possible to prevent electrostatic breakdown of such an interlayer insulating film.

A schematic structure of the TFT array substrate of the liquid crystal display element formed as described above is shown in a partially omitted plan view of FIG.

Then, the scanning line 2 as the second wiring
The line defect inspection of 27 is performed, and the continuity inspection for each one and the short-circuit inspection for the adjacent wirings are performed. Since the active matrix type liquid crystal display element of the second embodiment is also electrically similar in configuration to the equivalent circuit diagram of FIG. 4 described in the first embodiment, the line defect inspection of the scanning line 227 is performed first. 1
This can be performed by the same method as the signal line 111 as the second wiring in the embodiment.

Further, during the manufacturing process, the signal line 205 and the scanning line 227 are connected by the conductive portion 239, and are protected from electrostatic breakdown caused by the generated static electricity, so that electrostatic breakdown of the TFT element 241 is performed. Or the gate insulating film 22
It is possible to prevent electrostatic breakdown of the interlayer insulating film as shown in FIG.

The present invention is not limited to the above embodiments. In addition to this, it goes without saying that various changes can be made to the material of the semiconductor layer used in the TFT element, for example, without departing from the scope of the present invention.

[0057]

As described above in detail, according to the manufacturing method of the active matrix type liquid crystal display element of the present invention, the continuity inspection of the scanning lines and the signal lines is performed for each manufacturing process of the scanning lines and the signal lines. And short-circuit inspection are carried out, and T having a defect in the scanning line or the signal line in the early stage of the manufacturing process.
By discovering the FT array substrate, it is possible to reduce the defect rate of the liquid crystal display element at the completed stage, avoid waste of manufacturing, and realize the reduction of manufacturing cost.

[Brief description of drawings]

FIG. 1 is a sectional view showing a manufacturing process of an array substrate of an active matrix type liquid crystal display element of a first embodiment according to the present invention.

FIG. 2 is a partially omitted plan view showing a schematic configuration of an array substrate of an active matrix type liquid crystal display device according to a first embodiment of the present invention.

FIG. 3 is a partially omitted plan view showing a schematic configuration of an array substrate of the active matrix type liquid crystal display element of the first embodiment according to the present invention at the time of forming a scanning line.

FIG. 4 is an equivalent circuit diagram showing an electrical schematic configuration of an array substrate of the active matrix type liquid crystal display element of the first embodiment and the second embodiment according to the present invention.

FIG. 5 is a cross-sectional view showing the manufacturing process of the array substrate of the active matrix type liquid crystal display device of the second embodiment according to the present invention.

FIG. 6 is a partially omitted plan view showing a schematic configuration at the time when a signal line is formed on an array substrate of an active matrix type liquid crystal display element according to a second embodiment of the present invention.

FIG. 7 is a partially omitted plan view showing a schematic configuration of an array substrate of an active matrix type liquid crystal display device according to a second embodiment of the present invention.

FIG. 8 is a sectional view showing a manufacturing process of a conventional array substrate of an active matrix type liquid crystal display element.

FIG. 9 is a partially omitted plan view showing a schematic configuration of an array substrate of a conventional active matrix type liquid crystal display element.

[Explanation of symbols]

101 ... Transparent insulating substrate, 103 ... Scan line, 105 ... Gate electrode, 107 ... First conductive portion, 109 ... Gate insulating film, 111 ... Signal line, 113 ... Second conductive portion, 121 ...
TFT element, 123 ... Semiconductor layer, 125 ... Electric resistor,
135 ... Pixel electrode, 141 ... Conductive part, 143 ... TFT element substrate

Claims (3)

[Claims] 1. A first wiring is formed on one main surface of an insulating substrate, an insulating layer is formed on the first wiring, and a second wiring is formed on the insulating layer. A thin film transistor element connected to the second wiring is formed, a pixel electrode connected to the thin film transistor element is formed to form a thin film transistor element array substrate, and a counter substrate having a counter electrode is arranged to face the both substrates. In a method of manufacturing an active matrix type liquid crystal display device, in which a periphery of a substrate is sealed and a liquid crystal composition is injected between both substrates, a plurality of first wirings are formed and connection with the first wirings is avoided. A first conductor is formed to perform a continuity test for each of the first wirings and a short circuit test between adjacent wirings, and the first wiring is connected to the first wiring through an electric resistor and
Forming a second conductor connected to the first conductor and forming a second wiring arranged to intersect with the first wiring and connected to the first conductor via an electric resistor. Then, a method for manufacturing an active matrix type liquid crystal display element, characterized in that a continuity test is conducted for each of the second wirings and a short circuit test is conducted between adjacent wirings. 2. A first wiring is formed on one main surface of an insulating substrate, an insulating layer is formed, and a second wiring is formed with the insulating layer interposed therebetween, and the first wiring and the second wiring are formed. A thin film transistor element connected to the wiring is formed, a pixel electrode connected to the thin film transistor element is formed to form an element array substrate, and a counter substrate having a counter electrode is arranged opposite to the substrate to surround the both substrates. In a method for manufacturing an active matrix liquid crystal display device, which seals a substrate and injects a liquid crystal composition between both substrates, a plurality of first
The step of forming the first conductive part on the three sides of the peripheral edge of the insulating substrate while avoiding the connection with the connection end part, and the continuity test for each of the first wires. And a step of performing a short-circuit inspection between adjacent wirings, a step of forming an insulating film so as to cover the first wirings and the conductive portion, and a wiring portion that exposes a connection end of the first wirings. Forming a contact hole and a conductive portion contact hole that partially exposes the first conductive portion and an end contact hole that exposes an end portion of the first conductive portion in the insulating film; and the wiring portion. Forming an electric resistor in the contact hole and the conductive portion contact hole; and arranging to intersect with the first wiring and connecting to the first conductive portion through the electric resistor in the conductive portion contact hole. To form a second wiring, the wiring part through the electrical resistance of the contact hole is connected to the first wiring, and the first at the end contact hole
Forming a second conductive part connected to the conductive part, and conducting a continuity test for each of the second wires and a short circuit test between adjacent wires. Manufacturing method of active matrix type liquid crystal display device. 3. The method for manufacturing an active matrix type liquid crystal display element according to claim 1, wherein the electric resistor is made of the same material as the semiconductor layer used for the thin film transistor element.