JP3316929B2 - Matrix wiring board - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a matrix wiring board. More specifically, the present invention relates to a matrix wiring substrate including a plurality of wiring groups having an intersection on an insulating substrate.

[0002]

2. Description of the Related Art Matrix wiring is widely used in electronic devices having elements arranged on a plane, for example, image sensors for cameras using charge-coupled devices, substrates for active matrix type liquid crystal display panels, and the like.
In a matrix wiring formed on a plane, a wiring group including wirings that do not electrically cross each other is considered. Here, consider a matrix wiring composed of two wiring groups, that is, a first wiring group and a second wiring group. The intersection of the first wiring group and the second wiring group is formed via an insulating film. Further, in the above-described substrate for an image sensor or an active matrix type liquid crystal display panel, a charge-coupled device or a thin film transistor (hereinafter, referred to as a TF)
An active device (such as T) is formed.
The specific wirings forming the wiring group and the specific wirings forming the second wiring group are connected to each other via active devices at intersections. These active devices exhibit a predetermined function, for example, a function as a switch in the case of a TFT, by an electric signal supplied from the wiring of the first wiring group or the wiring of the second wiring group. When no signal is input, it is electrically insulated. For this reason, the first wiring group and the second wiring group are in an electrically insulated state, and when static electricity is applied between the wiring groups, an overvoltage is applied to the active devices formed between the wirings at the intersections or at the intersections. Voltage, and failures such as dielectric breakdown and characteristic deterioration of active devices occur.
In order to solve this problem, all the wirings of the first wiring group and the second wiring group are connected by a low-resistance conductor,
A method of preventing an overvoltage from being applied to the active devices formed between the wirings at the intersection or at the intersection is used. According to this method, the outer periphery of the matrix wiring is short-circuited by a low-resistance wiring formed in a ring shape called a short ring.

FIG. 52 is an explanatory view showing a matrix wiring board having a conventional short ring described in, for example, Japanese Patent Application Laid-Open No. 2-251931. In FIG. 52, reference numeral 701 denotes a short ring, and reference numeral 708 denotes a wiring constituting a first wiring group.
In this case, a source signal line, 709 is a wiring constituting a second wiring group, in this case, a gate signal line, 702 is a test electrode terminal formed at both ends of the source signal line 708 and the gate signal line 709, and 703 is A terminal electrode for connecting to a source signal line driving IC (hereinafter, referred to as a source IC connection electrode), 704 is a terminal electrode for connecting to a gate signal line driving IC (hereinafter, referred to as a gate IC connection electrode), e ₁ ~ E ₃₀ , f ₁ ~ f
Reference numeral ₂₀ denotes a cut portion between the short ring 701 and each signal wiring.

As is apparent from FIG. 52, in a conventional matrix wiring board having a short ring, the short ring 701 and the gate IC connection electrode 704 and the short ring 701 and the source IC connection electrode 703 are short-circuited. And all the wires are short-circuited. Further, cut portions e _1, ..., F _1, ... For cutting by a laser beam or the like are formed in the short-circuit portion. In FIG. 52, a TFT as a switching element is formed at the intersection of the source signal line 708 and the gate signal line 709, but is omitted in the drawing. When the matrix wiring substrate having the short ring is inspected or actually driven, the matrix wiring is cut after cutting the cut portions e _{1 to} e ₃₀ and f _{1 to} f ₂₀ from the short ring in advance by laser processing.

FIG. 53 is an explanatory view showing a conventional matrix wiring board having a short ring described in Japanese Patent Application Laid-Open No. H2-251931. In FIG. 53, reference numeral 711 denotes a short ring, reference numerals 712 to 717 denote a short ring that uses a plurality of source signal lines in common (hereinafter referred to as a block short ring) 718, a source signal line, 719, a gate signal line, and 72.
0 to 723 are test electrodes connected to the short ring 711, 724
729 are test electrode terminals connected to the block short ring (hereinafter referred to as block test electrode terminals), 730 and 731
Is an IC connection electrode for connecting the terminal electrode of the driving IC to each signal line, 733 is an inspection electrode terminal formed at both ends of each signal line, a _{1 to} a ₄ , b _{1 to} b ₆ , c _{1 to} c ₂₀ and d ₁
~d ₃₀ is cut. In FIG. 53, a TFT as a switching element is formed at an intersection of the source signal line 718 and the gate signal line 719, but is omitted in the drawing.

With this configuration, ten or more source signal lines are short-circuited to form a common block,
In addition, each common block is connected to a short ring formed in a peripheral portion. In the inspection process of the matrix wiring substrate, first, the cut portions a _{1 to} a ₄ provided at the squares of the short ring 711 are cut by irradiating a laser beam. As a result, the matrix wiring becomes the inspection electrode terminal 72.
Each of the shorted rings 711 connected to 0 to 723 is separated into two sets of source signal line groups and gate signal line groups that are short-circuited by each side portion after cutting. Therefore, the test electrode terminal
When a voltage is applied between 720 and 722 or between 721 and 723, a short circuit between the blocks can be detected. If a defect is detected, the cutting part b ₁
Cutting the ~b ₆ inspects the block. Finally, by cutting the cut portions c _{1 to} c ₂₀ and d _{1 to} d ₃₀ , all the wirings can be separated and independent. Therefore, when a defect occurs in a block, each signal line can be independently tested for inspection, and the inspection time can be reduced.

As described above, conventionally, the dielectric breakdown of the matrix wiring and the destruction of the active device due to the short ring have been prevented. No.

[0008]

However, when the matrix wiring is disconnected from the short ring, the first wiring group and the second wiring group constituting the matrix wiring are electrically insulated as described above. In addition, if static electricity is applied between the wiring groups, an overvoltage is applied to the active devices formed between the wirings at the intersections or at the intersections, causing a problem such as dielectric breakdown or deterioration of the characteristics of the active devices. In this state, an inspection process, a liquid crystal panel assembling process, a driving IC mounting process, and the like have to be performed. There is a problem that an active device formed in a part or an intersection part breaks down due to electrostatic breakdown or the like.

In the matrix wiring board shown in FIG.
Although there is a short circuit between the wires that make up the wiring blocks, the wiring blocks are electrically insulated,
When static electricity is applied between the wiring blocks, a potential difference is generated between the wiring blocks and other wiring blocks. Therefore, there is a problem that a failure such as electrostatic breakdown or deterioration of characteristics of a TFT formed at a crossing portion of a wiring block including the wiring to which the charge is supplied and another wiring block and a crossing portion occurs.

SUMMARY OF THE INVENTION The present invention has been made to solve such a problem, and it is intended to prevent a failure such as dielectric breakdown or characteristic deterioration of an electrically insulated intersection or an active device formed at the intersection in a matrix wiring board. An object of the present invention is to provide a matrix wiring board capable of performing an electrical inspection such as a short circuit and a disconnection of a matrix wiring without causing the occurrence.

[0011]

A matrix wiring board according to the present invention comprises a first wiring group formed of a conductor on an insulating substrate, and an intersection portion electrically insulated from the first wiring group. A second wiring group formed of a conductor having
At least one first low-resistance wire connecting at least a portion of wires of at least one of the second wire group and at least one second wire connecting at least a portion of wires of at least one of the second wire group.
Low resistance wiring and is provided, the first low-resistance wiring and a second low-resistance wiring, be connected via a device having a function of electrical switches with respect to direct current or alternating current, electrical
An element having a switch function is thinner than the pixel TFT.
A short-circuit TFT with a thin insulating film and constant voltage
Irreversibly conductive by applying a voltage higher than the value
The switching element is in a state .

[0012]

[0013] Still another matrix wiring board according to the present invention is a first matrix wiring board formed of a conductor on an insulating substrate.
And a second wiring group formed by conductors having intersections electrically insulated from the first wiring group, the matrix wiring board comprising: One end of at least one first switching element is connected to at least one end of one of the wirings or a connecting portion of at least one end of the plurality of wirings, and the other end of the first switching element is connected to a second one. The first and / or second switching elements are connected directly or via a second switching element to an end of each wiring of the wiring group
Switch that changes irreversibly from a conducting state to an insulating state.
Irreversibly changes from insulated to conducting
Switch with multiple switching elements connected in series
That at least two switching elements are connected in parallel.
Features.

[0014]

Still another matrix wiring board according to the present invention is a first matrix wiring board formed of a conductor on an insulating substrate.
And a second wiring group formed by conductors having intersections electrically insulated from the first wiring group, wherein at least one matrix wiring group is formed. An element having a function of an electrical switch for direct current or alternating current is provided at each end of each wiring or at each connection at both ends of a plurality of wirings.
The element having the function of an electrical switch is
Data.

Still another matrix arrangement according to the present invention
The wire substrate is a first substrate formed of a conductor on an insulating substrate.
And a crossing portion electrically insulated from the first wiring group
Composed of a second group of wirings formed by conductors having different portions
Matrix wiring board, at least one of
Or both ends of each wiring that constitutes the matrix wiring group
Is DC or AC for each connection at both ends of multiple wires.
On the other hand, an element having the function of an electrical switch is provided.
Becomes, the element having a function of electrical switches, and wherein the inductor and a resistor are connected in series elements
I do.

Still another matrix wiring board according to the present invention is a first matrix wiring board formed of a conductor on an insulating substrate.
And a second wiring group formed of conductors having intersections electrically insulated from the first wiring group, wherein both ends of each wiring are arranged in the matrix. The capacitor is connected to one electrode of a capacitor formed in a planar comb shape on a wiring board, and the other electrode of the capacitor is connected to an equipotential path.

[0018]

Still another matrix wiring board according to the present invention is a first matrix wiring board formed of a conductor on an insulating substrate.
And wiring group, a matrix wiring board composed of a second wiring group formed by a conductor having a first wiring group and electrically insulated intersection, all the ends of the matrix wiring Are connected by resistance wiring having a resistance higher than the resistance of the matrix wiring and a resistance lower than the insulation resistance between the wirings at the intersection, and both ends of each wiring of the matrix wiring are on the matrix wiring board. Is connected to one electrode of a capacitor formed on the other side, and the other electrode of the capacitor is connected to an equipotential path.

[0020]

According to the present invention, a pixel TF is provided as an element having an electric switch function for direct current or alternating current in the middle of a low resistance wiring connected to all of the matrix wirings.
Since a short-circuit TFT having an insulating film thinner than T is provided, an insulating state is selected when an electric signal is externally input to the matrix wiring in a process of inspecting electric characteristics of the matrix wiring substrate. However, when no electric signal is input, the conduction state can be selected. When the switching element is in an insulated state, the low-resistance wiring is divided individually or sequentially into a plurality of wirings by the switching element, and each of them is insulated. All the matrix wirings connected to are connected to one wiring group to form a plurality of insulated wiring groups. Since these wiring groups are insulated, independent electrical signals can be input to each of them, and the electrical characteristics of the matrix wiring board can be inspected.

On the other hand, when the element having the function of the electric switch is turned on, the low-resistance wiring becomes one continuous wiring, and all the matrix wirings are connected by the low-resistance wiring. Therefore, even if static electricity is applied between certain two matrix wirings, a current mainly flows through the low-resistance wiring, and the voltage drop between the two wirings is canceled by the voltage drop. Therefore, an overvoltage is not applied to the insulated intersection of the two matrix wirings, and the active device provided in the intersection does not break down or deteriorate.

[0022]

[0023]

[0024]

As an element having the function of an electric switch , a display having an insulating film thinner than a pixel TFT is used.
A switching element which is irreversibly turned on when a voltage higher than a certain voltage value is applied is used as a switching TFT, so that a voltage between two wirings generated by supply of static electricity is higher than a certain value. Then, the switching element becomes conductive and a current flows, the voltage between the two wires generated by the static electricity due to the voltage drop is consumed, and no overvoltage is applied to the insulated intersection of the two matrix wires.

[0026]

[0027]

A composite switching system in which a switching element that irreversibly changes from a conductive state to an insulating state and a switching element that can irreversibly change from an insulating state to a conductive state is connected in series to the end of each matrix wiring is provided. Since the element is provided, before the inspection step, the switching element that can irreversibly change from the insulated state to the conductive state is made conductive and the composite switching element is made conductive so that the low-resistance wiring is reduced. It becomes a continuous line of books, and all the matrix lines are connected by low-resistance lines. Therefore, even if static electricity is applied between certain two matrix wirings, a current mainly flows through the low-resistance wiring, and a voltage drop between the two wirings caused by the static electricity is caused by the voltage drop. No overvoltage is applied to the insulated intersections. In the inspection step, the switching element, which can irreversibly change from the conductive state to the insulated state, is insulated, so that the matrix wiring board can be inspected. After the inspection is completed, the switching elements that can irreversibly change from the insulating state to the conduction state of the composite switching element connected in parallel with the composite switching element are brought into the conduction state, and the composite switching element is brought into the conduction state. This can prevent failure such as dielectric breakdown due to static electricity.

Further, since the provided element having a function of electrical switches with respect to direct current or alternating current even without least an end portion of each matrix wiring constituting one of the matrix wiring group, the inspection process of the matrix wiring board In the case of actual driving, the element having the switch function is made conductive, and in other manufacturing steps, the insulating state is selected. By making the element having the switch function insulated, the matrix wiring is in a floating state and the contact area with the outside is reduced, so that the supply of static electricity to the wiring can be prevented.

[0030]

[0031]

Further, since an inductor is used as an element having the function of the electric switch, it acts as a high impedance for a voltage signal having a high frequency component supplied from the end of the matrix wiring of the inductor. In addition, an overvoltage is prevented from being applied to the intersection of the matrix wiring.

[0033]

Further, by using an inductor and a resistor connected in series as an element having the function of the electric switch, a high frequency component supplied from the end of the matrix wiring of the resistor and the inductor is provided. A low-pass filter is formed for a voltage signal together with a capacitance component in parallel with the resistor and the inductor, thereby preventing a sharp overvoltage from being applied to the intersection of the matrix wiring.

Further, since a capacitor in which one electrode is connected to an end of each wiring and the other electrode is connected to an equipotential path is provided on the matrix wiring substrate in a planar comb shape , the matrix wiring Acts as a low impedance for voltage signals having high frequency components applied to the circuit, preventing current from flowing between the equipotential paths and applying a steep overvoltage to the intersection of the matrix wiring. .

[0036]

In addition , apart from the equipotential paths, they are connected by resistance wiring having a resistance higher than the resistance of the matrix wiring and lower than the insulation resistance between the wirings at the intersection, and Since the equipotential path and the matrix wiring are connected via the capacitor, even if static electricity is generated between the wirings, a current flows through both the resistance wiring and the capacitor to make them equipotential, thereby preventing an overvoltage. In particular, since a high-frequency voltage can be short-circuited by a capacitor, it is also effective for high-frequency noise. In addition, since the wirings are in a high resistance state during normal times, there is no problem in inspecting the wiring board.

[0038]

Next, a matrix wiring board of the present invention will be described with reference to the drawings.

In the present invention, at least one end of the first wiring group and / or the second wiring group of the matrix wiring board has an element having a function of an electric switch for direct current or alternating current for every matrix wiring or several elements. Alternatively, they are connected to each of the wirings arranged in all the blocks so that the conductive state and the insulated state can be switched. As the element having the switching function, various switching elements such as transistors, capacitors, parallel-connected elements of capacitors and resistors, inductors, series-connected elements of inductors and resistors, resistors, and the like can be used. it can. Hereinafter, embodiments of each element and a connection method thereof will be described in detail.

[Embodiment 1] FIG. 1 is a view showing a T in Embodiment 1 of the present invention.
FIG. 3 is an explanatory diagram illustrating a configuration of an FT active matrix wiring board. In FIG. 1, 101 is a gate signal line, 102 is a source signal line, and a TFT is formed at the intersection of the gate signal line 101 and the source signal line 102, but is omitted in the drawing. 103a and 113a are inspection electrode terminals on the gate side, and 104a and 114a are inspection electrode terminals on the source side. Ten
5a and 105b are ones of all the source signal wiring groups,
And a low-resistance wiring (short ring) for commonly short-circuiting one of all the gate signal wiring groups, a transistor 106, a source 106a and a drain 106b thereof are connected to low-resistance wirings 105b and 105a, respectively, and a gate 106c is connected to one of the low-resistance wirings 105b and 105a. The electrode is connected to the other electrode side of the earthed switching capacitor 107, and an electrode terminal 108 for applying a charge to the switching capacitor 107 is connected to the connection point. The switching capacitance 107 varies depending on the performance of the TFT and the like, but for example, a capacitance of about 1 to 100 μF can be used.

At normal times, that is, except for a short circuit test between the gate signal wiring and the source signal wiring, the electrode terminal 108
By applying a constant positive voltage, the switching capacitance 107
, The potential of the gate 106c of the transistor 106 is increased, and the transistor 106 is turned on to keep the source 106a and the drain 106b conductive. As a result, 105a
And the low-resistance wirings 105b are short-circuited and serve as a conventional short ring. At this time, the gate signal wiring
A disconnection test of the source signal wiring 101 or the source signal wiring 102 can be performed.

On the other hand, when inspecting a short circuit between the gate signal wiring 101 and the source signal wiring 102, the electrode terminal 108 is grounded, the transistor 106 is turned off, and the low resistance wiring 105
a, 105b is inspected for short-circuit between the gate signal line 101 and the source signal line 102 by inspecting continuity between the inspection electrode terminals 103a,... and 104a,. Can be. However, if a short circuit occurs between the gate signal line 101 and the source signal line 102, the location of the short circuit and the number of short circuits cannot be limited.

[Second Embodiment] In the first embodiment, one of all signal wiring groups and one of all source wirings are short-circuited by low-resistance wiring. In this embodiment, however, as shown in FIG. One of the gate signal wiring groups and one of several source wiring groups are short-circuited by each of the low resistance wirings 105a to 105d, and the transistors 106A to 106D and the capacitor 107A are short-circuited.
To 107D for each block. Therefore, during the short-circuit inspection of the gate signal wiring 101 and the source signal wiring 102 in the above embodiment, the electrode terminal 108A is grounded,
The transistor 106A is turned off and the low-resistance wiring 105a is turned off.
The gate signal wiring 101 and the source signal wiring in the block 110 are tested by checking the continuity between the test electrode terminals 103a, 103b, 103c and 104d, 104e, 104f by insulating the wiring between A short circuit with 102 can be inspected. However, the signal wiring 101 in the block 110
If a short circuit occurs between the source wiring 102 and the short circuit, the location of the short circuit and the number of short circuits cannot be limited.

[Embodiment 3] FIG. 3 is a graph showing T in Embodiment 3 of the present invention.
FIG. 3 is an explanatory diagram illustrating a configuration of an FT active matrix wiring board. 3, 101 is a gate signal line, 102 is a source signal line, and the gate signal line 101 and the source signal line 102
Are formed at the intersections of, but are omitted in the drawing. ..., 103a, 103b ..., 113a, 113b ...
Gate side inspection electrode, 104a, 104b ..., 114a, 114b
.. Are source-side inspection electrodes. A switching capacitor 106 has a source 106a connected to the source signal wiring 102 or the gate signal wiring 101, a drain 106b connected to the low-resistance wiring 105, all the gates 106c short-circuited, and one electrode grounded. An electrode terminal 108 for applying a charge to the switching capacitor 107 is connected to a connection point of the other electrode side of the electrode 107.

At normal times, that is, other than at the time of wiring inspection, a constant voltage is applied from the electrode terminal 108 to apply a charge to the switching capacitor 107, and the gate of the transistor 106
The potential of the transistor 106c is increased to turn on the transistor 106 so that the source 106a and the drain 106b are electrically connected. As a result, a short circuit occurs between the gate signal wiring 101 and the low-resistance wiring 105 and between the source signal wiring 102 and the low-resistance wiring 105, thereby serving as a conventional short ring.

On the other hand, at the time of a short circuit test between the gate signal wiring 101 and the source signal wiring 102, the electrode terminal 108 is grounded, the transistor 106 is turned off, and the connection between the source signal wiring 101 and the low resistance wiring 105 and Gate signal wiring 10
2 and the low-resistance wiring 105 are insulated to test for continuity between the test electrode terminals 103a,... And 104a,. can do. Similarly, it is needless to say that a disconnection inspection of the gate signal wiring 101 or the source signal wiring 102 and a short-circuit inspection between adjacent wirings can be performed.

Fourth Embodiment In the third embodiment, transistors are provided at both ends of the gate signal wiring group or the source signal wiring group. In this embodiment, as shown in FIG.
By short-circuiting only some of the terminals on one side and connecting a transistor to the short-circuited portion, the inspection electrode terminals 103a,.
By inspecting the continuity between... And 104a,... The short-circuit between the gate signal wiring 101 and the source signal wiring 102 in the block can be inspected at once, and the inspection can be speeded up. However, if a short circuit occurs between the gate signal wiring and the source signal wiring in the block, the location of the short circuit and the number of short circuits cannot be limited. Similarly, it goes without saying that the disconnection inspection of the source signal wiring or the gate signal wiring can be performed.

Fifth Embodiment In the third embodiment, transistors are provided at both ends of the gate signal wiring 101 and the source signal wiring 102. In this embodiment, as shown in FIG. Are short-circuited so that they are alternately left and right, and a transistor is connected to that part, or the adjacent source signal wiring 102 is short-circuited so that they are alternately up and down, and a transistor is connected to that part. It is. As a result, the gate signal wiring 10
Inspection electrode terminal during short circuit inspection between 1 and source signal wiring 102
By inspecting the continuity between 103a,... And 104a,..., The short circuit between the gate signal wiring 101 and the source signal wiring 102 in the block can be simultaneously inspected at four places, thereby speeding up the inspection. Can be. Furthermore, if a short circuit occurs, the location of the short circuit can be determined by changing the combination between the test electrodes.

Needless to say, the inspection for disconnection of the gate signal wiring 101 or the source signal wiring 102 can be performed collectively.

[Embodiment 6] FIG. 6 is a graph showing a T value of Embodiment 6 of the present invention.
FIG. 3 is an explanatory diagram illustrating a configuration of an FT active matrix wiring board. 6, reference numeral 101 denotes a gate signal line, 102 denotes a source signal line, and the gate signal line 101 and the source signal line 1
Although a TFT is formed at the intersection of 02, it is omitted in the drawing. .. And 104a,... At one end of the gate signal wiring 101 and the source signal wiring 102.
Are short-circuited by low-resistance wirings 105b and 105a, and test electrode terminals 113a,.
Are provided. Gate side low resistance wiring 105b
And the low-resistance wiring 105 a on the source side are connected via a capacitor 121. As the capacitor 121, for example, a capacitor having a capacitance of about 1 to 100 μF can be used depending on the performance of the TFT.

Normally, the inspection electrodes 113a,.
Even if static electricity is generated during a,..., the instantaneous overvoltage caused by the static electricity is regarded as an AC signal, so that the low-resistance wiring on the gate side and the low-resistance wiring on the source side pass through a capacitor. Therefore, there is no possibility that dielectric breakdown occurs at the intersection of the gate signal wiring 101 and the source signal wiring 102.

Further, the inspection electrode terminals 113a,.
4a,... Can be measured by passing a DC signal. Needless to say, the disconnection inspection of the gate signal wiring and the source signal wiring can be performed.

[Embodiment 7] In the embodiment 6, the capacitor is formed between the low resistance wiring on the side of the gate signal wiring 101 and the low resistance wiring on the side of the source signal wiring 102, but in this embodiment, it is shown in FIG. As described above, since the capacitor 121 and the low-resistance body 122 are connected in parallel between the low-resistance wiring 105b on the side of the gate signal wiring 101 and the low-resistance wiring 105a on the side of the source signal wiring 102, the inspection electrode terminals 103a,.・ ・ And 104a 、 ・ ・
・ Even if static electricity is generated during the process, the AC component of the static electricity is passed through the capacitor 121 to the low-resistance wiring on the gate signal wiring 101 side.
105b and the low resistance wiring 105a on the side of the source signal wiring 102 are conducted, and the DC component of static electricity is consumed by the resistor 122, so that the gate signal wiring 101 and the source signal wiring 102
There is no danger of dielectric breakdown occurring at the intersections of. Resistor 12
Although the value of 2 varies depending on the performance of the TFT, it may be, for example, approximately 50 to 100 MΩ.

Further, it is needless to say that a short-circuit and a disconnection of each signal wiring can be inspected similarly to the sixth embodiment.

[Eighth Embodiment] FIG. 8 is an explanatory diagram for explaining an eighth embodiment of the present invention. In FIG. 8, reference numerals 201i and 202j denote an i-th gate signal wiring and a j-th source signal wiring, respectively. In each pixel portion where the gate signal wiring 201i and the source signal wiring 202j intersect, a TFT 203ij (subscripts i and j correspond to the i-th row and j-th column pixels, respectively) is formed. 206i and 206j are test electrode terminals connected to one ends of the i-th gate signal wiring 201i and the source signal wiring 202j, respectively. 215 is a gate-side low-resistance wiring that short-circuits all of the gate signal wirings 201i. Reference numeral 216 denotes a source-side low-resistance wiring that short-circuits all of the source signal wirings 201j. Reference numeral 204 denotes a short-circuit TFT formed by the same process as the TFT 203ij in the pixel portion.

FIG. 9 shows a sectional view of the shorting TFT 204. Reference numerals 207, 208, and 209 denote electrodes formed of conductors, 212 denotes an insulating oxide film, 213 denotes a channel region formed by a semiconductor, and 214 denotes a glass substrate.

In the present embodiment, the thickness d of the insulating oxide film 212 of the short-circuit TFT 204 is formed so that the withstand voltage of the short-circuit TFT 204 is lower than the withstand voltage of the pixel TFT 203ij. Gate electrode 2 of shorting TFT 204
07 is connected to one end of the gate-side low-resistance wiring 215, and the source electrode 208 is connected to one end of the source-side low-resistance wiring 216. Further, the drain electrode 209 is not connected anywhere. Further, a gate-side common inspection electrode terminal 218 is provided at the other end of the gate-side low-resistance wiring 215, and a source-side low-resistance wiring 216 is provided.
Are connected to a source-side common inspection electrode terminal 217, respectively. The short-circuit TFT 204 and the low-resistance wirings 215 and 216 are cut and removed along the broken line 211 after inspection for short-circuit and disconnection of the matrix wiring.

Next, a method of checking for disconnection and short-circuit of each signal wiring of the matrix wiring board of FIG. 8 will be described.
The inspection of the disconnection of the gate signal wiring 201i is performed by applying a signal to the gate-side common inspection electrode terminal 218 and each gate-side signal inspection electrode terminal 206i.
The inspection for disconnection is performed by applying a signal to the source-side common inspection electrode terminal 217 and each source-side inspection electrode terminal 206j. The gate signal wiring 201i and the source signal wiring 2
Inspection of short circuit between 02j is common gate electrode terminal
This is performed by checking continuity between 218 and the source-side common test electrode terminal 217.

Next, when static electricity is generated between certain wirings 201i and 202j in the manufacturing process and the inspection process of the matrix wiring board, the TF of the pixel portion where these wirings intersect is determined.
A potential difference occurs between the gate and source of T203ij. This potential is also applied between the gate electrode 207 and the source electrode 208 of the short-circuit TFT 204 connected in parallel. Here, the withstand voltage of the short-circuit TFT 204 is lower than the withstand voltage of the pixel TFT 203ij.
4 flows through the insulating oxide film. Further, since a voltage drop occurs in this process, no overvoltage is applied between the gate and the source of the pixel TFT 203ij.

As described above, the low-resistance wiring 215 in which one end of all gate signal wirings are short-circuited and the low-resistance wiring 216 in which one end of all source signal wirings are short-circuited,
The short-circuit TFT 204 is connected to the gate electrode 207 and the source electrode 208, respectively, and the withstand voltage of the TFT 204 is lower than the withstand voltage of the pixel TFT 203ij. Can be inspected, and even when static electricity is generated between certain wirings, only the short-circuiting TFT is broken down early, so that the pixel TFT 203ij is protected from overvoltage.

Ninth Embodiment FIG. 10 is an explanatory diagram for explaining a ninth embodiment of the present invention. In FIG. 10, an i-th gate signal line 201i, a j-th source signal line 202j, a TFT 20
3ij (subscripts i and j correspond to the pixels in the i-th row and j-th column, respectively) are the same as those shown in the eighth embodiment.
206mi and 206ni are test electrode terminals connected to the left end and the right end of the i-th gate signal wiring in FIG. 10, respectively, and 206pj and 206qj are the upper end and the lower end of the j-th source signal wiring in FIG. Is an inspection electrode terminal connected to. 204i and 205j are TFTs 203ij in the pixel section
This is a TFT for short-circuiting formed by the same process as that described above. The cross-sectional configuration diagram of these short-circuit TFTs 204i and 205j and the connection of the electrodes 207, 208 and 209 are shown in FIG.
It has the same structure as T. The gate electrode 207 of the shorting TFT 204i on the gate signal wiring side is connected to one end of the gate signal wiring 201i, and the gate electrode 207 of the shorting TFT 205j on the source signal wiring side is connected to one end of the source signal wiring 202j. All short-circuit TFT204
The electrodes 208 of i and 205j are short-circuited by a short ring 210 which is a low-resistance wiring. The thickness d (see FIG. 9) of the insulating oxide film 212 of the short-circuit TFT is formed so that the withstand voltage of the two short-circuit TFTs connected in series is lower than the withstand voltage of one pixel TFT 203ij. These short-circuit TFTs 204i and 205j and the short ring 210 are cut off along a broken line 211 after inspection for short-circuit or disconnection of the matrix wiring.

Next, a method of checking for disconnection and short-circuit of each signal wiring of the matrix wiring board of FIG. 10 will be described.
The inspection of the disconnection of the matrix wiring is performed by applying a signal between the gate-side inspection electrode terminals 206mi and 206ni and a signal between the source-side inspection electrode terminals 206pj and 206qj, respectively. In addition, the inspection for short-circuit between the gate signal wiring 201i and the source signal wiring 202j can be performed for each pixel by checking the continuity between a certain gate-side test electrode terminal 206mi and a certain source-side test electrode terminal 206pj. it can.

FIG. 11 is an equivalent circuit diagram of this embodiment viewed from a certain pixel TFT 203ij. When static electricity is generated between certain wirings 201i and 202j in the process of manufacturing a matrix wiring board or in the inspection process, the potential difference between the gate 219 and the source 220 of the TFT 203ij in the pixel portion where these wirings intersect, ie, between A and B. Occurs. This potential difference is caused by the electrodes 207a of two short-circuiting TFTs 205j and 204i connected in series.
And the electrode 207b. Here, the thickness d of the insulating oxide film of the shorting TFT (see FIG. 9) is set so that the withstand voltage of the two short-circuit TFTs 205j and 204i connected in series is lower than the withstand voltage of one pixel TFT 203ij. Since it is formed thin, it flows through the insulating oxide film of the two short-circuit TFTs 205j and 204i. Further, since a voltage drop occurs in this process, the pixel TFT 203
No overvoltage is applied between the gate 219 and the source 220 of ij.

As described above, the short-circuit TFT is connected to one end of each of the gate signal wiring and the source signal wiring.
Since the FTs are connected by the short ring 210 and the withstand voltage of the two short-circuit TFTs connected in series is lower than the withstand voltage of one pixel TFT 203ij, the insulation and short-circuit inspection must be performed for each wiring. In addition to being able to perform pixel display, when static electricity is generated between certain wirings, only the short-circuit TFT is broken down at an early stage, and the pixel TFT is protected from overvoltage.

[Embodiment 10] FIG. 12 is an explanatory view for explaining Embodiment 10 of the present invention. i-th gate signal wiring 201i,
j-th source signal wiring 202j, TFT 203ij (subscripts i and j respectively correspond to pixels in the i-th row and j-th column),
The inspection electrode terminals 206mj, 206ni, 206pj, 206qj are the same as those shown in the ninth embodiment. 221i, 222
j is a short-circuiting TFT formed by the same process as the pixel TFT 203ij. These short TF
The sectional structure of T221i and 222j and the connection of the electrodes 207, 208 and 209 are the same as those shown in FIG. Here, the length of the channel between the source 208 and the drain 209 of the short-circuit TFTs 221i and 222j is reduced, and the short-circuit TFT 2
It is formed such that the withstand voltage of the one in which the source and the drain are connected in series is lower than the withstand voltage between the gate and the source of the pixel TFT 203ij. The electrode 208 of the shorting TFT 221i on the gate signal wiring side is connected to one end of the gate signal wiring 201i, and the electrode 208 of the shorting TFT 222j on the source signal wiring side is connected to one end of the source signal wiring 202j. Also all T for short
The electrodes 209 of the FTs 221i and 222j are short-circuited by a short ring 210 which is a low-resistance wiring. Further, each electrode 207 of all the short-circuit TFTs 221i and 222j is connected to a wiring 223.
To GND level. These short-circuit TFTs 221i and 222j and the short rings 210 and G
The ND wiring 223 is cut off along a broken line 211 after inspection for a short circuit or disconnection of the matrix wiring.

In the tenth embodiment shown in FIG. 12, as in the ninth embodiment, an insulation short-circuit test can be performed for each wiring, pixel display can be performed, and when static electricity is generated between certain wirings. Only the short-circuit TFT is broken down, and the pixel TFT is not broken down. Further, the thickness of the insulating oxide film can be made the same as the thickness of the insulating oxide film of the TFT of the pixel.
T is formed.

[Eleventh Embodiment] FIG. 13 is an explanatory diagram for explaining an eleventh embodiment of the present invention. In FIG. 13, an i-th gate signal line 201i, a j-th source signal line 202j, a TFT 20
3ij, the test electrode terminals 206mi, 206pj are the same as those shown in the tenth embodiment, respectively. This is the side common inspection electrode terminal 217. Reference numeral 229 denotes an MIM (Metal Insulator Metal) element having a structure in which an insulating film is provided between two metal electrodes. Fig. 14
FIG. 14 shows a sectional configuration view of the MIM element 229. 225 is a Cr electrode, 226 is a Ta electrode connected to the gate wiring 201i, 227
Is an insulating oxide film formed of Ta ₂ O ₅ and having a thickness of about 40 to 60 nm, and 214 is a glass substrate. T of MIM element 229
The a electrode 226 is connected to the gate side peripheral wiring 215, and the Cr electrode 225 is connected to the source side peripheral wiring 216, respectively. By setting the thickness of the insulating oxide film 227 of the short-circuit MIM element 229 to an appropriate thickness, the withstand voltage between the gate and the source of the pixel TFT 203ij is made lower. These MIM elements
The 229 and the peripheral wirings 215 and 216 are cut off along the broken line 211 after inspection for a short circuit or disconnection of the matrix wiring.

In the eleventh embodiment shown in FIG. 13, a wiring in which one end of all gate signal wirings is short-circuited and a wiring in which one end of all source signal wirings are short-circuited are formed outside the matrix wiring. Since the electrodes are connected to the two electrodes and the breakdown voltage between the gate and the source of the pixel TFT 203ij is lower than the withstand voltage between the gate and the source of the pixel TFT 203ij, the insulation inspection and the wiring of each line are performed at the time of inspection for disconnection or short circuit of the matrix wiring as in the eighth embodiment. Inspection of a short circuit between the gate and the source of the substrate is possible, and even if static electricity is generated between certain wirings, only the MIM element is broken down.
T is not destroyed.

[Twelfth Embodiment] FIG. 15 is a view for explaining a twelfth embodiment of the present invention. In FIG. 15, an i-th gate signal line 201i, a j-th source signal line 202j, a TFT 203i
j, inspection electrode terminals 206mi, 206pj, gate side peripheral wiring
215, source side peripheral wiring 216, gate side common inspection electrode terminal
218 and the source-side common inspection electrode terminal 217 are the same as those shown in the eleventh embodiment. 230 is a device in which two opposite diodes are connected in series (hereinafter referred to as BT
B element). FIG. 16 shows a cross-sectional configuration diagram of the BTB element 230. 232 is an n-type amorphous silicon (a
-Si) thin film, 233 is an i-type a-Si thin film, 234 is an insulating oxide film 235, 236 is a platinum electrode, and 237 is a glass substrate. BT
The electrode 235 of the B element 230 is connected to the source side peripheral wiring 216 and the electrode 236.
Are connected to the gate side peripheral wiring 215, respectively. B
The voltage-current characteristics between the electrodes of the TB element 230 have the non-linear characteristics shown in FIG. V ₁ was made smaller than the breakdown voltage between the gate of the pixel TFT203ij source. This BTB
The element 230 and the peripheral wirings 215 and 216 are cut along the broken line 211 after inspection for short-circuit or disconnection of the matrix wiring. The breakdown voltage V1 of the BTB element 230 varies depending on the purpose of use, but usually a voltage of about 8 to ₁₀ V can be used.

The disconnection inspection of the matrix wiring is performed by applying signals between the gate-side inspection electrode terminal 206mi and the gate-side common electrode terminal 218 and between the source-side inspection electrode terminal 206pj and the source-side common electrode terminal 217, respectively. Done. In addition, the short-circuit test between the gate signal wiring 201i and the source signal wiring 202j is performed with the common electrode terminal 217.
In between the 218, whether by applying a signal voltage -V ₁ ~V ₁ shown in FIG. 17, between the gate-side peripheral wiring 215 and the source-side peripheral wiring 216 current flows because that is insulated Can be used to inspect for shorts.

On the other hand, when static electricity is applied between a certain wiring 201i and a certain wiring 202j in a process of manufacturing or inspecting a matrix wiring substrate, a high voltage is applied between the gate and the source of the TFT 203ij in the pixel portion where these wirings intersect. V ₂ occurs. This voltage V ₂ is also applied between the electrodes 235 and 236 of the BTB element 230 connected in parallel. At this time, FIG.
As shown in the figure, a current flows between the electrodes of the BTB element 230,
Since a voltage drop occurs in this process, the pixel TFT 203ij
No voltage is applied between the gate and the source. Therefore, there is static electricity occurs between the wire 201i and 202j, even the high voltage V ₂ is generated between TFT203ij gate and source of the pixel portion in which these lines intersect, pixel TFT203ij
Is not destroyed. Further, by setting the withstand voltage of the BTB element sufficiently high, even if static electricity is generated, if the overvoltage is equal to or less than the withstand voltage of the BTB element, the BTB element is not destroyed. It can respond to the generation of static electricity.

[Thirteenth Embodiment] FIG. 18 is a view for explaining a thirteenth embodiment of the present invention. In FIG. 18, the i-th gate signal line 201i, test electrode terminals 206mi, 206ni, 306pj, 30
6qj is the same as that shown in the ninth embodiment (the subscripts i and j correspond to the pixels in the i-th row and j-th column, respectively). 302j is a j-th source signal wiring formed on the counter substrate side. 240ij is an MIM (Metal Insulator Metal) element having a structure in which an insulating film is provided between two metal electrodes, and its cross-sectional configuration is the same as that shown in FIG. 240ij Ta electrode 226 is a gate signal wiring 201i, and Cr electrode 225 is a source signal wiring 302 formed on the opposite substrate side via a transparent electrode.
j. 245i and 311j are short-circuit MIM elements formed by the same process as the MIM element 240ij in the pixel portion.
The electrode is connected to the gate side peripheral wiring 215, the Cr electrode is connected to the inspection electrode terminal 206ni, the Ta electrode of the MIM element 311j is connected to the inspection electrode terminal 306qj, and the Cr electrode is connected to the source side peripheral wiring 316.

FIG. 19 shows the voltage-current characteristics between the electrodes of the pixel MIM element 240ij and the short-circuit MIM elements 245i and 311j. In FIG. 19, a MIM element 240i for a pixel is used.
j is A, the short MIM elements 245i and 311j
Are represented as B ₁ and B ₂ . As shown in FIG. 19, the rising voltages of the short-circuit MIM elements 245i and 311j (B ₁ and B _{2 in} FIG. 19) are changed to the pixel MIM elements 240i.
j is set to be sufficiently lower than the rising voltage V ₁ , or to have sufficient steepness with respect to the voltage, so that a sufficiently large current flows in the short-circuit MIM element when the higher voltage V ₂ is applied. I have to. Such a rise voltage can be adjusted by changing the thickness and area of the insulating oxide film. This short MIM element
245i, 311j and the peripheral wirings 215, 316 are cut along the broken line 211 after inspection for short-circuit or disconnection of the matrix wiring. In the present embodiment, an example is shown in which two wiring groups are not formed on the same substrate, but one wiring group is provided on the opposite substrate. , Each embodiment of the present invention can be similarly applied. In FIG. 18, components formed on the opposing substrate are shown in the 300s.

In the present embodiment, the inspection for disconnection of the matrix wiring is performed in the same manner as in the ninth embodiment.
6mi and 206ni and source side test electrodes 306pj and 306q
This is done by applying a signal during each of j. The short-circuit test between the gate signal wiring 201 and the source signal wiring 302 can be performed for each pixel by checking the continuity between a certain gate-side test electrode terminal 206mi and a certain source-side test electrode terminal 306pj. On the other hand, during the manufacturing process and inspection process of the matrix wiring board,
201i, even static electricity occurs between 302j, the high voltage V ₂ occurs between these wires and the electrode 225 of the MIM element 240ij pixel portion intersecting 226. This voltage V ₂ is equal to 2
The voltage is also applied between the electrodes of the two MIM elements 245i and 311j.
At this time, as shown in FIG. 19, a larger amount of current flows in the short-circuit MIM element than in the pixel MIM element, and a voltage drop occurs in the process, so that the electrode 2 of the pixel MIM 240ij
Very little voltage is applied between 25 and 226. Thus static electricity is generated between some wires 201i and 302j, be a high voltage V ₂ is applied between the electrodes of the MIM element 240ij of the pixel portion of these lines intersect, MIM elements 240i pixels
j is not destroyed. Furthermore, by setting the withstand voltage of the short-circuit MIM element sufficiently high, even if static electricity is once applied, if the overvoltage is equal to or lower than the withstand voltage, the short-circuit MIM element can be used.
Since the M element is not destroyed, the inspection can be performed as it is, and it is possible to cope with the supply of static electricity again.

[Embodiment 14] FIG. 20 is a cross-sectional view of T in Embodiment 14 of the present invention.
FIG. 3 is an explanatory diagram illustrating a configuration of an FT active matrix wiring board. In FIG. 20, 101 is a gate signal line, 102 is a source signal line, and a TFT is formed at an intersection of the gate signal line 101 and the source signal line 102, but is omitted in the drawing.

A switching element irreversibly changeable from a conductive state to an insulated state in the middle of a low resistance wiring 105 connecting all of one end of the gate signal wiring 101 and one end of the source signal wiring 102 and irreversible from an insulated state to a conductive state A switching element group 150 is formed by connecting at least two or more composite switching elements in which at least two variable switching elements are connected in series. FIG. 21 shows a conceptual diagram of the switching element group 150. 150 is a switching element 152a that can irreversibly change from a conductive state to an insulating state and a switching element that can irreversibly change from an insulating state to a conductive state
A composite switching element 152, 15 in which 152b is connected in series
3,154 are connected in parallel at least two or more. Figure 2
FIG. 2 shows a cross-sectional view of the configuration of the composite switching element 152. 161
Is a glass substrate, 162 is a metal wiring of, for example, Al or Cr, 1
63 is an insulating film made of, for example, SiO ₂ or SiN;
Is a metal wiring made of, for example, Al or Cr. Fifteen
Reference numeral 2a denotes an irreversible switching element which is in a conductive state at first, and the metal wiring 162 is disconnected by irradiating a laser to be in an insulated state. 152b is in an insulated state for the first time, and the metal wiring 16b is irradiated by laser irradiation.
4 and the insulating film 163 are dissolved, and the upper metal wiring 164 and the lower metal wiring 162 are connected to each other.

In a normal state (other than a short-circuit test between the gate signal wiring and the source signal wiring), the gate signal wiring 101 and the source signal wiring 102 have low resistance by the composite switching element 153 formed only of the conductive state 153a. It is connected to the wiring 105. Therefore, the low-resistance wiring 105 serves as a short ring, and all the wirings are short-circuited.

Between the gate signal wiring 101 and the source signal wiring 102
When performing a short circuit inspection at
By switching the 153a from the conductive state to the insulated state by laser cutting, short-circuit inspection between the gate signal wiring 101 and the source signal wiring 102 can be performed. Further, after the inspection is completed, the 154b of the composite switching element 154 is switched from the insulating state to the conductive state by laser welding, so that the low-resistance wiring 105 again serves as a short ring, and the gate signal wiring 101 and the source signal wiring 102
Are shorted. Composite switching element 15 connected in parallel
Switching can be performed by the number of 0 components. Also,
There is redundancy because they are connected in parallel.

[Embodiment 15] In Embodiment 14, the switching element irreversibly changes from the conductive state to the insulating state.
A switching element group 150 is formed by connecting at least two or more composite switching elements 152 in which a switching element 152b irreversibly changeable from an insulating state to a conducting state and a switching element 152b are connected in series, as shown in FIG. Thus, at least two composite switching elements 172, 173, and 174 in which a switching element 172a that can irreversibly change from a conductive state to an insulating state and a switching element 172b that can irreversibly change from an insulating state to a conductive state are connected in parallel. By forming the switching element group 170 by connecting in series as described above, a large number of composite switching elements can be formed between the gate signal wirings and the source signal wirings having a small pitch width.

Normally (except for the short-circuit inspection between the gate signal wiring and the source signal wiring), the gate signal wiring and the source signal wiring are formed only by the conductive state 172a, and the gate signal wiring and the source signal wiring are formed by the low resistance wiring 105 by the composite switching element 172. And all wirings are short-circuited.

When a short circuit between the gate signal line and the source signal line is inspected, the short circuit between the gate signal line and the source signal line can be inspected by switching the composite switching element 172 from the conductive state to the insulating state. Become. After the inspection is completed, the composite switching element
By switching b from the insulated state to the conductive state, again all the wires are short-circuited. Switching can be performed by the number of components of the composite switching element group 170 connected in series.

[Embodiment 16] FIG. 24 is an explanatory view showing the structure of a TFT active matrix wiring board for explaining Embodiment 16 of the present invention. In FIG. 24, an i-th gate signal line 201i, a j-th source signal line 202j, a pixel TF
T203ij, test electrode terminals 206mi, 206ni, 206pj,
206qj indicates the same part as that shown in the twelfth embodiment. 401mi, 401ni, 401pj, 401qj are pixel TFs
T for test terminal formed by the same process as T203ij
FT. However, TFT 401mi for inspection terminal, 401n
i, 401pj and 401qj are designed to have sufficiently high withstand voltage.
The element area is formed larger than the pixel TFT 203ij.

The drain electrodes 402 of the test terminal TFTs 401mi and 401ni are connected to both ends of the gate signal wiring 201i, and the drain electrodes 402 of the test terminal TFTs 401pj and 401qj are connected to both ends of the source signal wiring 202j. In addition, the source electrode 40 of the inspection terminal TFT 401mi, 401ni.
3 is connected to the test electrode terminals 206mi and 206ni, respectively, and the source electrodes 403 of the test terminal TFTs 401pj and 401qj are connected to the test electrode terminals 206pj and 206qj, respectively. In addition, all the inspection terminal TFTs 401mi, 401n
The gate electrodes 404 of i, 401pj, and 401qj are connected to a switch terminal 406 by a peripheral wiring 405. The inspection terminal TFTs 401mi, 401ni, 401pj, 401qj, the peripheral wiring 405, and the switching terminal 406 are cut off along the broken line 211 after inspection for short circuit or disconnection of the matrix wiring.

In this embodiment, the switch is used for a wiring test such as a short circuit test between the gate signal line 201i and the source signal line 202j, a disconnection test of the gate signal line 201i or the source signal line 202j or a short circuit test of the adjacent line. Terminal
By applying a positive voltage to 406, the test terminal TF
T401mi, 401ni, 401pj, and 401qj are turned on, and each wiring can be inspected by checking conduction between the inspection electrodes. Since no voltage is applied to the switch terminal 406 except at the time of inspection, each inspection electrode terminal is insulated from each matrix wiring, and each of these matrix wirings is covered with a protective film. Is less likely to be applied. Therefore, the pixel TFT 203ij is not easily destroyed by static electricity.

[Embodiment 17] FIG. 25 is an explanatory view showing the structure of a TFT active matrix wiring board for explaining Embodiment 17 of the present invention. In FIG. 25, an i-th gate signal line 201i, a j-th source signal line 202j, a pixel TF
T203ij, test electrode terminals 206mi, 206ni, 206pj,
Reference numeral 206qj, inspection terminal TFTs 401pj and 401qj, peripheral wiring 405, and switch terminal 406 show the same parts as those shown in Embodiment 16, but in this embodiment, the gate signal wiring 201i
The inspection signal TFT is not provided on the side, and the gate signal wiring 201 is not provided.
Test electrode terminals 206mi and 206ni are directly connected to i.

In this embodiment, the switch is used for a wiring inspection such as a short-circuit inspection between the gate signal wiring 201i and the source signal wiring 202j, a disconnection inspection of the gate signal wiring 201i or the source signal wiring 202j or a short-circuit inspection of the adjacent wiring. Terminal
By applying a positive voltage to 406, the inspection terminal TFT4
01pj and 401qj are turned on, and each wiring inspection can be performed by checking conduction between the inspection electrodes. Since no voltage is applied to the switch terminal 406 except at the time of inspection, the inspection electrode terminals 206pj and 206qj on the source side are insulated from each matrix wiring, and the source signal wiring 202j is covered with a protective film. Static electricity is less likely to be generated on the source signal wiring. On the other hand, when static electricity is generated in the gate signal wiring, the potential of the source signal wiring 202j also increases as the potential of the gate signal wiring 201i increases. The charge generated at this time is a high withstand voltage test terminal TFT 401p.
j, 401qj, the dielectric breakdown hardly occurs at the intersection of the gate signal wiring and the source signal wiring.

[Embodiment 18] FIG. 26 is an explanatory view showing the structure of a TFT active matrix wiring board for explaining Embodiment 18 of the present invention. This embodiment is different from the embodiment 16 in that a high breakdown voltage phototransistor 411 is provided instead of the high breakdown voltage inspection terminal TFT connected to both ends of the gate signal wiring 201i and the source signal wiring 202j.

In this embodiment, by irradiating light to the phototransistor 411, each matrix wiring 201i, 2
02j and test electrode terminals 206mi and 206ni and 206pj and 2
Since 06qj is conductive, each wiring inspection can be performed by the same operation as in the sixteenth embodiment. At the time other than the time of inspection, by blocking light to the phototransistor 411, each inspection electrode terminal is insulated from each matrix wiring, and since each of these matrix wirings is covered with a protective film, static electricity is generated. It is unlikely that the voltage will be applied to the matrix wiring. Therefore, the pixel TFT 203ij is not easily destroyed by static electricity.

[Embodiment 19] FIG. 27 is an explanatory view showing the structure of a TFT active matrix wiring substrate for explaining Embodiment 19 of the present invention. In FIG. 27, an i-th gate signal line 201i, a j-th source signal line 202j, a pixel T
FT203ij, test electrode terminals 206mi, 206ni, 206p
j and 206qj indicate the same parts as those described in the tenth embodiment. Reference numeral 420 denotes an irreversible switching element, and the sectional configuration is shown in FIGS. 28 (a) and (b). In FIG. 28 (a),
422 and 423 are conductor terminals, the terminal 422 is a matrix wiring 201i or 202j, and the terminal 423 is a test electrode terminal 206p.
j or 206qj. An insulating film 424 insulates the terminal 422 from the terminal 423. 425 is a protective film.

In this embodiment, in the manufacturing process of the matrix wiring board, each inspection electrode is insulated from each matrix wiring, and since each of these matrix wirings is covered with the protective film, static electricity is applied to the matrix wirings. Is less likely to occur. Therefore, the pixel TFT 203ij is not easily destroyed by static electricity. Also, in the inspection process of the matrix wiring board or during the actual driving, FIG.
As shown in (b), the irreversible switching element 420 is irradiated with laser light to make the terminals 422 and 423 conductive.
Thereby, each matrix wiring and each inspection electrode terminal are electrically connected, and inspection and actual driving can be performed.

[Embodiment 20] FIG. 29 is an explanatory view showing the structure of a TFT active matrix wiring board for explaining Embodiment 20 of the present invention. In FIG. 29, an i-th gate signal line 201i, a j-th source signal line 202j, a pixel TF
T203ij, test electrode terminals 206mi, 206ni, 206pj,
206qj, irreversible switching element 420
However, in this embodiment, no inspection terminal TFT is provided on the gate signal wiring 201i side, and the inspection electrode terminals 206mi, 206mi are provided on the gate signal wiring 201i.
ni are directly connected.

In this embodiment, in the manufacturing process of the matrix wiring board, the inspection electrode terminals 206pj and 206qj on the source side are insulated from each matrix wiring and the source signal wiring is formed on the protective film as in the case of the seventeenth embodiment. Because it is covered, it is difficult for static electricity to be applied to the source signal wiring. On the other hand, when static electricity is generated in the gate signal wiring, the potential of the source wiring 202j also increases with the rise of the potential of the gate signal wiring 201i, so that no voltage is applied between the gate and the source of the pixel TFT 203ij. Therefore, the pixel TFT 203ij is not easily destroyed by static electricity. In the inspection step or actual driving of the matrix wiring board, similarly to the nineteenth embodiment, the irreversible switching element 420 is irradiated with a laser, and each matrix wiring and each inspection electrode terminal are electrically connected to each other to perform inspection or actual inspection. Driving can be performed.

[Embodiment 21] FIG. 30 is an explanatory diagram showing a structure of an embodiment 21 of the present invention. In FIG. 30, 501 is a first wiring group forming a matrix wiring, 502 is a second wiring group forming a matrix wiring, 503 is a test electrode part of the first wiring group 501 forming a matrix wiring, and 504 is The inspection electrode portion of the second wiring group 502 that forms the matrix wiring, 505 are inductors provided at both ends of each wiring of the second matrix wiring group, and 506 is the first matrix wiring 5
01 and the second matrix wiring 502 via the inductor 505
Is a low-resistance wiring for short-circuiting. Since the second wiring group 502 forming the matrix wiring is provided with inductors 505 at both ends and connected to the wiring group 501 forming the matrix wiring, the wiring groups 501 and 5 forming the matrix wiring are formed.
02 can inspect the short circuit and the open circuit between the wirings.
On the other hand, due to the inductors 505 formed at both ends of the wiring group 502 forming the matrix wiring, the current flowing instantaneously via the inductor 505 changes in proportion to the inductance L of the inductor 505. Since the time constant is directly proportional to the inductance L, the larger the value of the inductance L, the smaller the current flowing instantaneously through the inductor 505 to the wiring group 502 forming the matrix wiring. Accordingly, a voltage component having a high frequency component supplied from the opposite side to the matrix wiring group 502 via the inductor 505 is reduced in voltage having a high frequency component by the inductor 505, and an overvoltage is applied to the wiring group 502 forming the matrix wiring. Prevent instantaneous taking. In this embodiment, the inductors 505 are provided at both ends of one of the wires 502 forming the matrix wiring group. However, the same effect can be obtained by providing the inductors 505 at both ends of the wiring group 501 forming the matrix wiring. Needless to say, inductors 505 may be provided at both ends of the wiring group forming the matrix wiring.

[Embodiment 22] FIG. 31 is an explanatory diagram showing a structure of an embodiment 22 of the invention. In FIG. 31, 501 is a first wiring group forming a matrix wiring, 502 is a second wiring group forming a matrix wiring, 503 is a test electrode part of the first wiring group 501 forming a matrix wiring, and 504 is The inspection electrode portion of the second wiring group 502 that forms the matrix wiring, 505 are inductors provided at both ends of each wiring of the second matrix wiring group, and 506 is the first matrix wiring 5
01 and the second matrix wiring 5 via the inductor 505
Reference numeral 507 denotes a connection point where a plurality of inductors 505 provided at both ends of a wiring group 502 forming a matrix wiring are connected for each block. A second wiring group 502 for forming a matrix wiring is provided with inductors 505 at both ends to form a wiring group 501 for forming a matrix wiring.
Therefore, the wiring groups 501 and 502 forming the matrix wiring can be inspected for short circuits and open circuits between the wirings. On the other hand, due to the inductors 505 formed at both ends of the wiring group 502 forming the matrix wiring, the current flowing instantaneously through the inductor 505 is
It changes in proportion to the inductance L of 05. At this time, since the constant is directly proportional to the inductance L, the larger the value of the inductance L is, the smaller the current flowing instantaneously to the wiring group 502 forming the matrix wiring via the inductor 505 becomes smaller. Therefore, a voltage component having a high frequency component supplied from the side opposite to the matrix wiring group 502 via the inductor 505 is reduced by the inductor 505, and an overvoltage is instantaneously applied to the wiring group 502 forming the matrix wiring. To prevent In the present embodiment, the inductor 505 is further connected in units of a plurality to form a block,
By using the connection point 507 as an inspection electrode terminal when inspecting a short circuit between the respective wiring groups 501 and 502 forming the matrix wiring group, it is possible to reduce the time of the inspection process. In this embodiment, one of the wirings forming the matrix wiring group
Although inductors 505 are provided at both ends of 502, similar effects can be obtained by providing inductors 505 at both ends of a wiring group 501 forming a matrix wiring. Further, inductors 505 may be provided at both ends of the group of wirings forming the matrix wiring. Further, also in the matrix wiring group 501, the same effect can be obtained by blocking the inductors 505 formed at both ends of the wiring.

[Embodiment 23] FIG. 32 is an explanatory diagram showing a structure of an embodiment 23 of the present invention. In FIG. 32, 501 is a first wiring group forming a matrix wiring, 502 is a second wiring group forming a matrix wiring, 503 is a test electrode part of the first wiring group 501 forming a matrix wiring, and 504 is The inspection electrode portion of the second wiring group 502 that forms the matrix wiring, 515 is a resistor provided at both ends of each wiring of the second matrix wiring group, and 506 is the first wiring through the first matrix wiring 501 and the resistor 515. This is a low-resistance wiring that short-circuits the second matrix wiring 502. Since the resistors 515 are provided at both ends of the second wiring group 502 forming the matrix wiring and connected to the wiring group 501 forming the matrix wiring, the wiring groups 501 and 502 forming the matrix wiring are mutually connected. Inspection of short circuit and open circuit is possible. On the other hand, due to the resistors 515 formed at both ends of the wiring group 502 forming the matrix wiring, the current that flows instantaneously through the
Changes in proportion to the resistance R. Since the time constant is directly proportional to the resistance R, the larger the value of the resistance R, the instantaneously the resistance 51
The current flowing through the wiring group 502 forming the matrix wiring via 5 becomes small. Therefore, a voltage component having a high frequency component supplied from the opposite side to the matrix wiring group 502 via the resistor 515 is reduced by the resistor 515, and an overvoltage is instantaneously applied to the wiring group 502 forming the matrix wiring. To prevent In the present embodiment, the resistors 515 are provided at both ends of one of the wires 502 forming the matrix wiring group. However, the same effect can be obtained by providing the resistors 515 at both ends of the wiring group 501 forming the matrix wiring. . Needless to say, resistors 515 may be provided at both ends of both wiring groups forming the matrix wiring.

[Embodiment 24] FIG. 33 is an explanatory diagram showing a configuration of an embodiment 24 of the invention. In FIG. 33, reference numeral 501 denotes a first wiring group that forms a matrix wiring, 502 denotes a second wiring group that forms a matrix wiring, 503 denotes an inspection electrode unit of the first wiring group 501 that forms a matrix wiring, and 504 denotes a test electrode part. The inspection electrode portion of the second wiring group 502 that forms the matrix wiring, 515 is a resistor provided at both ends of each wiring of the second matrix wiring group, and 506 is a connection through the first matrix wiring 501 and the resistor 515. This is a low-resistance wiring that short-circuits the second matrix wiring 502. Reference numeral 517 denotes a contact point where a plurality of resistors 515 provided at both ends of a wiring group 502 forming a matrix wiring are connected for each block. Since the second wiring group 502 forming the matrix wiring is connected to the wiring group 501 forming the matrix wiring by providing resistors 515 at both ends, the wiring groups 501 and 502 forming the matrix wiring are provided.
Can inspect for short circuit and open circuit between wirings. On the other hand, due to the resistors 515 formed at both ends of the wiring group 502 forming the matrix wiring, the current flowing instantaneously via the resistor 515 changes in proportion to the resistance R of the resistor 515. Since the time constant is directly proportional to the resistance R, the larger the value of the resistance R, the smaller the current flowing instantaneously to the wiring group 502 forming the matrix wiring via the resistance 515. Therefore, a voltage component having a high frequency component supplied from the opposite side to the matrix wiring group 502 via the resistor 515 is reduced in voltage by the resistor 515, and an overvoltage is instantaneously applied to the wiring group 502 forming the matrix wiring. This is prevented. In this embodiment, a plurality of resistors 515 are further connected to each other to form a block and form a matrix wiring group.
By using the connection point 517 as an inspection electrode when inspecting a mutual short circuit between 501 and 502, it is possible to reduce the time of the inspection process. In the present embodiment, the resistors 515 are provided at both ends of one of the wires 502 forming the matrix wiring group.
Is provided, the same effect can be obtained by blocking. Further, resistors 515 may be provided at both ends of both wiring groups forming the matrix wiring to form a block.

[Embodiment 25] FIG. 34 is an explanatory diagram showing a structure of an embodiment 25 of the invention. In FIG. 34, reference numerals 501 to 504 denote the same parts as in Example 21, 525 denotes a resistor provided at both ends of each wiring of the second matrix wiring group 502, and 526 denotes each of the wirings of the second matrix wiring group. An inductor 506 connected in series with the resistor 525 provided at both ends is a low-resistance wire that short-circuits the second matrix wire 502 via the first matrix wire 501, the resistor 525 and the inductor 526. Since the second wiring group 502 forming the matrix wiring is connected to the wiring group 501 forming the matrix wiring by connecting the resistor 525 and the inductor 526 in series at both ends, the wiring group 501 forming the matrix wiring and 502 is capable of testing for shorts and opens between wires.

On the other hand, a wiring group forming a matrix wiring
A resistor 525 formed at both ends of 502 and an inductor 526 connected in series with the resistor make the resistor 525 and the inductor 52
The instantaneous current flowing through 6 varies in proportion to the resistance R of the resistor 525 and the inductance L of the inductor 526. Since the time constant is directly proportional to R and L, the current flowing instantaneously through the resistor 525 and the inductor 526 to the wiring group 502 forming the matrix wiring becomes small. Accordingly, a voltage component having a high frequency component supplied from the side opposite to the matrix wiring group 502 via the resistor 525 and the inductor 526 is reduced by the resistor 525 and the inductor 526 to form a wiring forming a matrix wiring. This prevents an overvoltage from being momentarily applied to the group 502. In this embodiment, one of the wiring groups 502 forming the matrix wiring group
Are provided at both ends, respectively. However, the same effect can be obtained by providing a resistor 525 and an inductor 526 in series at both ends of a wiring group 501 forming a matrix wiring. Note that the resistor 525 and inductor 5
As 26, the same resistors and inductors as those of the embodiments 23 and 21 can be used. Also, a resistor 52 is provided at each end of both wiring groups forming the matrix wiring.
Similar effects can be obtained by providing 5 and the inductor 526.

[Twenty-Sixth Embodiment] FIG. 35 is an explanatory diagram showing the structure of a twenty-sixth embodiment of the present invention. In FIG. 35, all the reference numerals denote the same parts as in Example 25. Inductor 526
In the reverse order. Also in this embodiment, the current flowing instantaneously is attenuated by the series connection of the resistor and the inductor, and the same effect as in the twenty-fifth embodiment can be obtained.

[Twenty-Seventh Embodiment] FIG. 36 is an explanatory diagram showing a structure of a twenty-seventh embodiment of the present invention. In FIG. 36, reference numerals indicate the embodiments.
In this embodiment, an inductor 526 is connected in series to a connection point 527 where a plurality of resistors 525 provided at both ends of each wiring of the second matrix wiring group are connected for each block. This is different from the embodiments 25 and 26 in that
Also in the present embodiment, the second
Is a wiring group 501 in which a resistor 525 and an inductor 526 are connected in series at both ends to form a matrix wiring.
Therefore, the wiring groups 501 and 502 forming the matrix wiring can be inspected for short-circuit and open-circuit between the wirings. Further, by connecting the resistors 525 in units of a plurality to form a block, and using the connection point 527 as an inspection electrode when inspecting a short circuit between the respective wirings 501 and 502 forming the matrix wiring group, an inspection process is performed. Time can be reduced. On the other hand, the resistances 525 formed at both ends of the wiring group 502 forming the matrix wiring group and the inductor 526 connected in series with the resistance are used in the embodiments 25 and 26.
Similarly, the current flowing through the wiring group 502 becomes smaller. Therefore, a voltage component having a high frequency component applied from the side opposite to the matrix wiring group 502 via the resistor 525 and the inductor 526 is reduced in voltage by the resistor 525 and the inductor 526 to form a matrix wiring. Wiring group 50
2 can be prevented from being instantaneously applied with an overvoltage. In addition,
In the present embodiment, the resistor 525 and the inductor 526 are provided at both ends of one of the wiring groups 502 forming the matrix wiring group. Similar effects can be obtained by providing an inductor 526 in series at the connection point. Also,
The same effect can be obtained by providing the block of the resistor 525 and the inductor 526 which are similarly provided at both ends of both wiring groups forming the matrix wiring.

[Embodiment 28] FIG. 37 is an explanatory diagram showing a structure of an embodiment 28 of the invention. In FIG. 37, all the reference numerals denote the same parts as in Embodiment 27, and in this embodiment, inductors provided at both ends of each wiring of the second matrix wiring group.
This embodiment differs from the twenty-seventh embodiment in that a resistor 525 is connected in series to a connection point 527 where a plurality of 526s are connected for each block.
Also in the present embodiment, the second
Is connected to a wiring group 501 that forms a matrix wiring by providing an inductor 526 and a resistor 525 at both ends in series, so that the wiring groups 501 and 502 that form the matrix wiring are short-circuited with each other. Open inspection is possible. Further, when the inductors 526 are connected in a plural number to form a block, and the wirings 501 and 502 forming the matrix wiring group are inspected for a mutual short circuit, a connection point 52 is formed.
By using 7 as an inspection electrode terminal, the time of the inspection process can be reduced. On the other hand, due to the inductor 526 formed at both ends of the wiring group 502 forming the matrix wiring and the resistor 525 connected in series with the inductor, the current flowing through the wiring group 502 is reduced as in the twenty-seventh embodiment. Therefore, the matrix wiring group 50 is connected via the inductor 526 and the resistor 525.
A voltage component having a high frequency component applied from the side opposite to 2 is reduced by the inductor 526 and the resistor 525, so that an overvoltage can be prevented from being instantaneously applied to the wiring group 502 forming the matrix wiring. In the present embodiment, the inductor 526 and the resistor 525 are provided at both ends of one wiring group 502 forming the matrix wiring group. However, the inductors 526 are provided at both ends of the wiring group 501 forming the matrix wiring.
The same effect can be obtained even if the resistors 525 are connected in series to form a block at the connection point. The same effect can be obtained by providing the inductor 526 and the resistor 525 at both ends of both wiring groups forming the matrix wiring.

[Embodiment 29] FIG. 38 is an explanatory diagram showing a structure of an embodiment 29 of the invention. In FIG. 38, 101 is a gate signal wiring, 102 is a source signal wiring, 103 is a gate-side inspection electrode terminal, and 104 is a source-side inspection electrode terminal. 601 is an equipotential path, and 602 is a capacitor.

One electrode is connected to the end of each of the matrix wirings, and the other electrode is formed on a matrix wiring substrate connected to the equipotential path 601.
2 acts as a low impedance with respect to a voltage signal having a high frequency component supplied to the matrix wiring, and by flowing a current between the equipotential path 601, a steep overvoltage occurs at the intersection of the matrix wiring. It is prevented from being applied. As the capacitor 602, a capacitor having a capacitance of about 1 μF or less can be used although it depends on the use of the wiring board.

At the time of inspection for short circuit between the gate signal wiring 101 and the source signal wiring 102, a DC voltage is applied to the inspection electrode terminal 10
By applying the voltage to 3 and 104, the equipotential path 601 and the matrix wirings 101 and 102 become insulated, and the equipotential path does not serve as a short ring.

FIG. 39 shows a structure when a capacitor 602 is formed between an equipotential path 601 and a matrix wiring. FIG. 39 shows a cross section of the substrate on which the matrix wiring is formed, for example, shows a cross section of a main portion near an end of the gate signal wiring 101. A dielectric film 603 is provided between the wiring layer of the gate signal wiring 101 and the wiring layer of the equipotential path 601 so that the wirings overlap each other.
602 is formed.

FIG. 40 shows a structure of a capacitor formed planarly between an equipotential path 601 and a matrix wiring, for example, a gate signal wiring 101. FIG. FIG. 40 is a plan view seen from above the substrate on which the matrix wiring is formed. The equipotential paths 601 and the gate signal lines 101 are alternately arranged in a comb shape, and a dielectric is buried between them to form a dielectric film 603, and a capacitor 602 is formed.

[Embodiment 30] FIG. 41 is an explanatory view showing a structure of an embodiment 30 of the invention. In FIG. 41, 101 is a gate signal wiring, 102 is a source signal wiring, 103 is a gate-side inspection electrode terminal, and 104 is a source-side inspection electrode terminal. 611 is a resistor.

The resistance wiring in which all of the matrix wirings are connected by a plurality of resistors 611 so that all of the matrix wirings have a higher resistance than the matrix wiring and are lower than the resistance value at the intersection is: When static electricity is applied between the two matrix wirings, an electric current is caused to flow through the resistance wiring to prevent an overvoltage from being applied to the intersection of the matrix wirings.

If the resistance between the two matrix wirings is sufficiently higher than the resistance of the matrix wiring itself, the inspection of the matrix wiring board is possible.

FIG. 42 shows a structure in which matrix wirings are connected by a resistor 611. A thick film resistor 611 is formed between the matrix wirings, for example, the gate signal wirings 101, and the respective wirings are connected to form a resistance wiring.

FIG. 43 is a diagram showing a resistor between matrix wirings.
This shows another structural example when the connection is made by 611. Matrix wiring, for example, an amorphous silicon film, a polysilicon film, a NiCr alloy film, or the like, is formed between the gate signal wirings 101, and a resistance wiring having a higher resistivity than the signal wiring is formed.
By setting to 1, each wiring is connected.

FIG. 44 shows a resistor between matrix wirings.
This shows still another example of the structure when the connection is made by 611. Matrix wiring, for example, gate signal wiring 10
During the period 1, each wiring is connected by connecting wirings of a pattern having a smaller line width than that of the matrix wiring and using them as resistors.

[Embodiment 31] FIG. 45 is an explanatory diagram showing a structure of an embodiment 31 of the invention. In FIG. 45, 101 is a gate signal wiring, 102 is a source signal wiring, 103 is a gate-side inspection electrode terminal, and 104 is a source-side inspection electrode terminal. 601 is an equipotential path, 611 is a resistor, and 602 is a capacitor.

The matrix wiring board shown in FIG. 45 has a capacitor 602 in which test electrode terminals 103 and 104 are connected to one electrode and an equipotential path 601 is connected to the other electrode.
Further, all of the matrix wirings are connected by a resistor having a higher resistance than the matrix wiring and lower than the resistance value at the intersection. In such a matrix wiring, the capacitor 602 formed on the matrix wiring board acts as a low impedance with respect to a voltage signal having a high frequency component supplied to the matrix wiring, so that the capacitor 602 is provided between the equipotential paths 601. This prevents a sharp overvoltage from being applied to the intersection of the matrix wiring by flowing a current. When static electricity is applied between the two matrix wirings, the resistor 611
To prevent an overvoltage from being applied to the intersection of the matrix wirings.

Each resistor 611 between two matrix wirings
Is sufficiently higher than the resistance of the matrix wiring itself, and since the equipotential path 601 and the matrix wiring are insulated DC-wise by the capacitor 602, the inspection of the matrix wiring board is also possible.

FIG. 46 shows a structure in which matrix wirings are connected by a resistor 611 and a capacitor 602 is provided between the matrix wirings and the equipotential path 601. Equipotential path 601 and matrix wiring, for example, gate signal wiring 101
The capacitor shown in FIG. 39 is provided between them, and the resistor 611 composed of the thick film resistor shown in FIG. 42 is provided between the matrix wirings.
To connect the wires.

FIG. 47 shows another example of the structure in which the matrix wiring is connected by a resistor 611 and a capacitor 602 is provided between the matrix wiring 101 and the equipotential path 601.
A capacitor 602 shown in FIG. 39 is provided between the equipotential path 601 and a matrix wiring, for example, a gate signal wiring 101, and the wiring is connected between the matrix wirings by a resistor 611 made of polysilicon shown in FIG.

FIG. 48 shows still another structural example in which the matrix wiring is connected by a resistor 611 and a capacitor 602 is provided between the matrix wiring and the equipotential path 601. A capacitor 602 of the planar arrangement shown in FIG. 40 is provided between the equipotential path 601 and the matrix wiring, for example, the gate signal wiring 101, and a resistor 611 made of a thick film resistor shown in FIG. Connect the wires.

FIG. 49 shows still another structural example in which the matrix wiring is connected by a resistor 611 and a capacitor 602 is provided between the matrix wiring and the equipotential path 601. A capacitor 602 of the planar arrangement shown in FIG. 40 is provided between the equipotential path 601 and the matrix wiring, for example, the gate signal wiring 101, and the wiring is provided by a resistor 606 made of polysilicon shown in FIG. 43 between the matrix wirings. Connect between.

FIG. 50 shows still another structural example in which the matrix wiring is connected by a resistor 611 and a capacitor 602 is provided between the matrix wiring and the equipotential path 601. A capacitor 40 shown in FIG. 39 is provided between the equipotential path 601 and a matrix wiring, for example, a gate signal wiring 101, and the wiring is connected between the matrix wirings by a resistor 611 composed of a thin wiring shown in FIG.

FIG. 51 shows a structure in which the matrix wiring is connected by a resistor 611 and a capacitor 602 is provided between the matrix wiring and the equipotential path 601. Equipotential path 601 and matrix wiring, for example, gate signal wiring
During the period 101, the planar capacitor 602 shown in FIG.
Are provided, and the wiring is connected between the matrix wirings by a resistor 606 composed of the thin wiring shown in FIG.

[0122]

As described above, by arranging an appropriate element in the middle of the low-resistance wiring for connecting the matrix wiring, the electric characteristics of the matrix wiring substrate can be improved in a state where the ends of the matrix wiring are connected by the low-resistance wiring. It is possible to obtain a matrix wiring board that can be inspected and that can prevent failures such as dielectric breakdown and characteristic deterioration of active devices formed at intersections or at intersections of the matrix wiring boards due to static electricity.

Similar effects can be obtained by arranging appropriate elements at both ends of the matrix wiring.

Further, similar effects can be obtained by connecting the matrix wirings with high resistance wires having an appropriate resistance value.

[Brief description of the drawings]

FIG. 1 is an explanatory diagram showing a configuration of a first embodiment showing one embodiment of a matrix wiring board of the present invention.

FIG. 2 is an explanatory diagram showing a configuration of a second embodiment showing one embodiment of the matrix wiring board of the present invention.

FIG. 3 is an explanatory view showing a configuration of a third embodiment showing one embodiment of the matrix wiring board of the present invention.

FIG. 4 is an explanatory diagram showing a configuration of a fourth embodiment showing one embodiment of the matrix wiring board of the present invention.

FIG. 5 is an explanatory view showing a configuration of a fifth embodiment showing one embodiment of the matrix wiring board of the present invention.

FIG. 6 is an explanatory diagram showing a configuration of Embodiment 6 showing one embodiment of the matrix wiring board of the present invention.

FIG. 7 is an explanatory diagram showing a configuration of a seventh embodiment showing one embodiment of the matrix wiring board of the present invention.

FIG. 8 is an explanatory diagram showing a configuration of an eighth embodiment showing one embodiment of the matrix wiring board of the present invention.

FIG. 9 is a cross-sectional view of a short-circuit TFT according to an eighth embodiment showing one embodiment of the matrix wiring substrate of the present invention.

FIG. 10 is an explanatory view showing a configuration of a ninth embodiment showing one embodiment of the matrix wiring board of the present invention.

FIG. 11 is an equivalent circuit diagram of an embodiment 9 of the matrix wiring substrate according to the present invention, as viewed from the TFT 403ij of the ninth embodiment.

FIG. 12 is an explanatory view showing a configuration of a tenth embodiment showing one embodiment of the matrix wiring board of the present invention.

FIG. 13 is an explanatory diagram showing a configuration of an eleventh embodiment showing one embodiment of the matrix wiring board of the present invention.

FIG. 14 is a sectional configuration view of an MIM element according to an eleventh embodiment showing one embodiment of the matrix wiring board of the present invention.

FIG. 15 is an explanatory diagram showing a configuration of a twelfth embodiment showing one embodiment of the matrix wiring board of the present invention.

FIG. 16 is a sectional view showing the structure of a BTB element according to a twelfth embodiment, showing one embodiment of the matrix wiring board of the present invention.

FIG. 17 is a voltage-current characteristic diagram of a BTB element of Example 12 showing one example of the matrix wiring board of the present invention.

FIG. 18 is an explanatory view showing a structure of a thirteenth embodiment showing one embodiment of the matrix wiring board of the present invention.

FIG. 19 is a voltage-current characteristic diagram of the MIM element of Example 13 showing one example of the matrix wiring board of the present invention.

FIG. 20 is an explanatory diagram showing a configuration of Embodiment 14 showing one embodiment of the matrix wiring board of the present invention.

FIG. 21 is an explanatory view of a composite element group of Example 14 showing one example of the matrix wiring board of the present invention.

FIG. 22 is a sectional view of a switching element of Example 14 showing an example of the matrix wiring board of the present invention.

FIG. 23 is an explanatory diagram of a composite element group of Example 15 showing one example of the matrix wiring board of the present invention.

FIG. 24 is an explanatory diagram showing a configuration of Embodiment 16 showing one embodiment of the matrix wiring board of the present invention.

FIG. 25 is an explanatory view showing the configuration of Embodiment 17 showing one embodiment of the matrix wiring board of the present invention.

FIG. 26 is an explanatory view showing the structure of an embodiment 18 showing an embodiment of the matrix wiring board of the present invention.

FIG. 27 is an explanatory view showing a configuration of a nineteenth embodiment showing one embodiment of the matrix wiring board of the present invention.

FIG. 28 is a sectional view of an irreversible switching element of Example 19 showing one example of the matrix wiring board of the present invention.

FIG. 29 is an explanatory view showing a configuration of a twentieth embodiment showing one embodiment of the matrix wiring board of the present invention.

FIG. 30 is an explanatory diagram showing the configuration of Embodiment 21 showing one embodiment of the matrix wiring board of the present invention.

FIG. 31 is an explanatory view showing a structure of a twenty-second embodiment showing one embodiment of the matrix wiring board of the present invention.

FIG. 32 is an explanatory view showing the structure of Embodiment 23 showing one embodiment of the matrix wiring board of the present invention.

FIG. 33 is an explanatory diagram showing a configuration of a twenty-fourth embodiment showing one embodiment of the matrix wiring board of the present invention.

FIG. 34 is an explanatory diagram showing a configuration of a twenty-fifth embodiment showing one embodiment of the matrix wiring board of the present invention.

FIG. 35 is an explanatory diagram showing the configuration of Embodiment 26 showing one embodiment of the matrix wiring board of the present invention.

FIG. 36 is an explanatory view showing the configuration of Embodiment 27 showing one embodiment of the matrix wiring board of the present invention.

FIG. 37 is an explanatory diagram showing a configuration of a twenty-eighth embodiment showing one embodiment of the matrix wiring board of the present invention.

FIG. 38 is an explanatory view showing a structure of a twenty-ninth embodiment showing one embodiment of the matrix wiring board of the present invention.

FIG. 39 is an explanatory view showing the structure of a capacitor according to an embodiment 29 showing an embodiment of the matrix wiring board of the present invention;

FIG. 40 is an explanatory view showing another example of the configuration of the capacitor according to the embodiment 29 showing an embodiment of the matrix wiring board of the present invention;

FIG. 41 is an explanatory diagram showing a configuration of a thirtieth embodiment showing one embodiment of the matrix wiring board of the present invention.

FIG. 42 is an explanatory diagram showing a configuration of an equipotential path according to an embodiment 30 showing an embodiment of the matrix wiring board of the present invention.

FIG. 43 is an explanatory view showing another example of the configuration of the equipotential path in Example 30 showing one example of the matrix wiring board of the present invention.

FIG. 44 is an explanatory view showing still another example of the configuration of the equipotential path according to the embodiment 30 showing an embodiment of the matrix wiring board of the present invention.

FIG. 45 is an explanatory diagram showing a configuration of Embodiment 31 showing one embodiment of the matrix wiring board of the present invention.

FIG. 46 is an explanatory view showing the configuration of the end portion of the matrix wiring of Embodiment 31 showing one embodiment of the matrix wiring board of the present invention.

FIG. 47 is an explanatory diagram showing another example of the configuration of the end portion of the matrix wiring of Embodiment 31 showing one embodiment of the matrix wiring board of the present invention.

FIG. 48 is an explanatory view showing still another example of the configuration of the end of the matrix wiring of Embodiment 31 showing one embodiment of the matrix wiring board of the present invention.

FIG. 49 is an explanatory view showing still another example of the configuration of the end of the matrix wiring of Embodiment 31 showing one embodiment of the matrix wiring board of the present invention.

FIG. 50 is an explanatory view showing still another example of the configuration of the end of the matrix wiring of Embodiment 31 showing one embodiment of the matrix wiring board of the present invention;

FIG. 51 is an explanatory diagram showing still another example of the configuration of the end portion of the matrix wiring of Embodiment 31 showing one embodiment of the matrix wiring board of the present invention.

FIG. 52 is a diagram showing an example of a conventional matrix wiring board.

FIG. 53 is a diagram showing another example of the conventional matrix wiring board.

[Explanation of symbols]

 101 Gate signal wiring 102 Source signal wiring 103 Test electrode terminal 104 Test electrode terminal 105 Low resistance wiring 106 Transistor 121 Short ring capacitor 122 Short ring resistor 150 Switching element group 152 Composite switching element 162 Composite switching element 160 Switching element group 201 Gate signal wiring 202 Source signal wiring 204 Shorting TFT 210 Short ring 215 Peripheral wiring 216 Peripheral wiring 221 Shorting TFT 222 Shorting TFT 229 MIM element 230 BTB element 240 MIM element 245 Shorting MIM element 302 Source signal wiring 311 Shorting MIM Element 401 TFT for inspection terminal 405 Peripheral wiring 411 High breakdown voltage phototransistor 420 Irreversible switching element 501 First wiring group 502 Second wiring group 503 Inspection terminal 504 Inspection terminal 505 Inductor 506 Low resistance wiring 515 Resistance 525 Resistance 526 Inn Kuta 601 Equipotential path 602 capacitor 611 resistor

──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Toshio Ohana 8-1-1, Tsukaguchi Honcho, Amagasaki City Inside the Materials and Devices Laboratory, Mitsubishi Electric Corporation (72) Inventor Yoshinori Numano 8-1-1, Tsukaguchi Honcho, Amagasaki City No. 1 In the Materials and Devices Laboratory, Mitsubishi Electric Corporation (72) Inventor Fumio Matsukawa 8-1-1, Tsukaguchihonmachi, Amagasaki-shi In the Materials and Devices Laboratory Mitsubishi Electric Corporation (56) References JP-A-5-323381 (JP) JP-A-6-258665 (JP, A) JP-A-6-202150 (JP, A) JP-A-6-258668 (JP, A) JP-A-62-283390 (JP, A) 2-118515 (JP, A) JP-A-63-85586 (JP, A) JP-A-1-303416 (JP, A) JP-A-3-116117 (JP, A) JP-A-3-296725 (JP, A) A) JP-A-2-24 4126 (JP, A) 5-5137 (JP, U) (58) Fields investigated (Int. Cl. ⁷ , DB name) G02F 1/1368 H01L 21/3205 H01L 29/786

Claims (6)

(57) [Claims] A first wiring group formed of a conductor on an insulating substrate; and a second wiring group formed of a conductor having an intersection part electrically insulated from the first wiring group. , And at least one first low-resistance wiring connecting at least ends of at least a part of the first wiring group and at least a part of a wiring of the second wiring group. At least one second low-resistance wiring connecting the ends of the first and second low-resistance wirings, and the first low-resistance wiring and the second low-resistance wiring have a function of an electrical switch for DC or AC. The element which is connected via the element and has the function of the electric switch is a short-circuit TFT having an insulating film thinner than the pixel TFT, and is irreversible when a voltage of a certain voltage value or more is applied. Switches that become electrically conductive Matrix wiring board that is a switching element. 2. A first wiring group formed by a conductor on an insulating substrate, and a second wiring group formed by a conductor having an intersection part electrically insulated from the first wiring group. Wherein at least one end of one wiring of the first wiring group or at least one end of at least one end of the plurality of wirings is connected to at least one end of the first wiring group.
One end of each of the first switching elements is connected, and the first
The other end of the switching element is connected to the end of each wiring of the second wiring group directly or via the second switching element, and the first and / or second switching element is insulated from the conductive state. A matrix wiring board comprising at least two combined switching elements connected in series with switching elements irreversibly changing to a state and switching elements irreversibly changing from an insulating state to a conducting state. 3. A first wiring group formed by a conductor on an insulating substrate and a second wiring group formed by a conductor having an intersection part electrically insulated from the first wiring group. An element having a function of an electric switch for direct current or alternating current at each end of each wiring constituting each of at least one matrix wiring group or at each connection portion at both ends of each of a plurality of wirings. Is provided, the element having the function of the electrical switch,
A matrix wiring board that is an inductor. 4. A first wiring group formed by a conductor on an insulating substrate and a second wiring group formed by a conductor having an intersection part electrically insulated from the first wiring group. An element having a function of an electric switch for direct current or alternating current at each end of each wiring constituting each of at least one matrix wiring group or at each connection portion at both ends of each of a plurality of wirings. Is provided, the element having the function of the electrical switch,
A matrix wiring board which is an element in which an inductor and a resistor are connected in series. 5. A first wiring group formed by a conductor on an insulating substrate, and a second wiring group formed by a conductor having an intersection part electrically insulated from the first wiring group. Wherein both ends of each wiring are connected to one electrode of a capacitor formed in a planar comb shape on the matrix wiring substrate, and the other electrode of the capacitor is connected to an equipotential path. Matrix wiring board connected to 6. A first wiring group formed by a conductor on an insulating substrate, and a second wiring group formed by a conductor having an intersecting portion electrically insulated from the first wiring group. A matrix wiring board, wherein all ends of the matrix wiring have a higher resistance than the resistance of the matrix wiring and a resistance lower than the inter-wiring insulation resistance at the intersection. And both ends of each wiring of the matrix wiring are connected to one electrode of a capacitor formed on the matrix wiring substrate, and the other electrode of the capacitor is connected to an equipotential path. Matrix wiring board.