JPH0630323B2 - Capacitor array - Google Patents
Capacitor arrayInfo
- Publication number
- JPH0630323B2 JPH0630323B2 JP63011578A JP1157888A JPH0630323B2 JP H0630323 B2 JPH0630323 B2 JP H0630323B2 JP 63011578 A JP63011578 A JP 63011578A JP 1157888 A JP1157888 A JP 1157888A JP H0630323 B2 JPH0630323 B2 JP H0630323B2
- Authority
- JP
- Japan
- Prior art keywords
- capacitor
- dielectric substrate
- dielectric constant
- substrate
- capacitor electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、１つの誘電体基板の複数のコンデンサを構成
してなるコンデンサアレイに関し、特に隣接するコンデ
ンサ電極の間隔を浮遊容量を増大させることなく狭める
ことにより、部品の小型化，コスト低減を実現できるよ
うにしたコンデンサアレイの構造に関する。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a capacitor array including a plurality of capacitors on one dielectric substrate, and more particularly to increasing the stray capacitance by spacing the adjacent capacitor electrodes. The present invention relates to the structure of a capacitor array that can be made smaller and the cost can be reduced by narrowing it.
従来から、コンデンサは、抵抗やコイル等と組み合わせ
て、電子回路のなかで基本的な機能を果たす部品として
多用されている。このようなコンデンサの一例として、
従来、第４図に示すコンデンサアレイがある。このコン
デンサアレイ１は、セラミックス製誘電体基板２の上面
に所定間隔をあけて３個の第１コンデンサ電極３を形成
し、上記誘電体基板２の下面の略全面に上記第１コンデ
ンサ電極３と該基板２を挟んで対向する共通電極として
の第２コンデンサ電極４を形成するとともに、上記それ
ぞれの第１，第２コンデンサ電極３，４にリード端子５
を半田付け接続して構成されている。これにより１つの
部品素子内に３個のコンデンサが構成されている。2. Description of the Related Art Conventionally, a capacitor is often used as a component that performs a basic function in an electronic circuit in combination with a resistor, a coil and the like. As an example of such a capacitor,
Conventionally, there is a capacitor array shown in FIG. In this capacitor array 1, three first capacitor electrodes 3 are formed on a top surface of a ceramic dielectric substrate 2 at predetermined intervals, and the first capacitor electrode 3 and the first capacitor electrode 3 are formed on substantially the entire bottom surface of the dielectric substrate 2. A second capacitor electrode 4 is formed as a common electrode facing each other with the substrate 2 interposed therebetween, and a lead terminal 5 is formed on each of the first and second capacitor electrodes 3 and 4.
Are connected by soldering. As a result, three capacitors are formed in one component element.
また、上記コンデンサアレイ１は、誘電体基板２上に複
数のコンデンサ電極３を並列させることから、できるだ
け該電極膜３間の距離ｌを接近させることにより誘電体
基板２の面積を小さくして、部品の小型化の要請に応え
るようにしている。In the capacitor array 1, the plurality of capacitor electrodes 3 are arranged in parallel on the dielectric substrate 2, so that the distance l between the electrode films 3 is made as close as possible to reduce the area of the dielectric substrate 2. We are trying to meet the demand for miniaturization of parts.
しかしながら、上記従来のコンデンサアレイ１において
は、一般的に静電容量を大きくするために上記誘電体基
板２に誘電率の高いＢａＴｉＯ３系セラミックスを採用
しており、上記隣合うコンデンサ電極３間が高誘電率の
物質で充填された構造となることから、上記コンデンサ
電極３間の距離ｌが近づくほど該電極膜３間の浮遊容量
Ｃが増大し、その結果コンデンサ同士を交流的に分離で
きなくなるという問題点がある。即ち、上記コンデンサ
アレイ１の理想の等価回路（第５図(a)参照）に対し
て、実際の等価回路（第５図(b)参照）には余分の浮遊
容量Ｃが存在していることになり、特性に悪影響を与え
る場合がある。従って、上記コンデンサ同士の分離をは
かるために浮遊容量Ｃの発生を抑えられる距離ｌを確保
する必要があることから、それだけ上記誘電体基板２の
面積が大きくなり、結局、部品の小型化の要請に十分応
えられていない。また、上記誘電体基板は面積が増大し
た分割れ易くなるとともに、部品コストが上昇するとい
う問題点もある。However, in the conventional capacitor array 1 described above, BaTiO 3 ceramics having a high dielectric constant is generally used for the dielectric substrate 2 in order to increase the capacitance, and the space between the adjacent capacitor electrodes 3 is increased. Since the structure is filled with a material having a high dielectric constant, the stray capacitance C between the electrode films 3 increases as the distance 1 between the capacitor electrodes 3 decreases, and as a result, the capacitors cannot be separated in an AC manner. There is a problem. That is, there is an extra stray capacitance C in the actual equivalent circuit (see FIG. 5 (b)) in comparison with the ideal equivalent circuit of the capacitor array 1 (see FIG. 5 (a)). And may adversely affect the characteristics. Therefore, in order to separate the capacitors from each other, it is necessary to secure a distance l capable of suppressing the generation of the stray capacitance C, so that the area of the dielectric substrate 2 is increased correspondingly, and eventually, the miniaturization of parts is required. Is not fully answered. In addition, the above-mentioned dielectric substrate has a problem that the area is increased and it is easy to be divided, and the component cost is increased.
本発明の目的は、上記浮遊容量を増大させることなくコ
ンデンサ電極を近接して配置でき、ひいては部品の小型
化を実現できるとともに、部品コストを低減できるコン
デンサアレイを提供することにある。An object of the present invention is to provide a capacitor array in which the capacitor electrodes can be arranged close to each other without increasing the above-mentioned stray capacitance, and eventually the size of parts can be reduced, and the cost of parts can be reduced.
そこで本発明は、誘電体基板の表面に所定の間隔をあけ
て複数の第１コンデンサ電極が、裏面に上記第１コンデ
ンサ電極と上記基板を挟んで対向する第２コンデンサ電
極がそれぞれ形成されたコンデンサアレイにおいて、上
記誘電体基板の上記隣合う第１コンデンサ電極の間の部
分に、酸化性雰囲気中でレーザー照射することにより、
誘電体基板を溶融させてなる空隙部と、誘電体基板から
低誘電体を溶融析出させてなり上記空隙部を充填する該
誘電体基板より誘電率の低い低誘電率部とを同時形成し
たことを特徴としている。ここで、レーザー照射によ
り、例えば基板を構成するＢａＴｉＯ３がＴｉＯ２とな
り、この部分の誘電率が大幅に低下することから低誘電
率部を実現できるものである。Therefore, the present invention is a capacitor in which a plurality of first capacitor electrodes are formed on the front surface of a dielectric substrate at predetermined intervals, and a second capacitor electrode is formed on the back surface so as to face the first capacitor electrode with the substrate sandwiched therebetween. In the array, by irradiating the portion of the dielectric substrate between the adjacent first capacitor electrodes with a laser in an oxidizing atmosphere,
Simultaneous formation of a void portion formed by melting the dielectric substrate and a low dielectric constant portion having a lower dielectric constant than the dielectric substrate formed by melting and depositing a low dielectric material from the dielectric substrate and filling the void portion. Is characterized by. Here, by laser irradiation, for example, BaTiO 3 forming the substrate becomes TiO 2 , and the dielectric constant of this portion is significantly reduced, so that a low dielectric constant portion can be realized.
本発明に係るコンデンサアレイによれば、誘電体基板の
隣合う第１コンデンサ電極間に、誘電体基板より誘電率
の低い低誘電率部を形成したので、誘電体基板の上記隣
合うコンデンサ電極の間の部分が低誘電率となり、その
結果上記コンデンサ電極同士を近接させても浮遊容量の
増大を回避でき、コンデンサ同士の分離ができる。従っ
て、従来のものよりコンデンサ電極間の距離を狭めるこ
とができ、それだけ誘電体基板の面積を小さくでき、ひ
いては部品の小型化を実現できるとともに、割れの発生
を回避でき、しかも部品コストを低減できる。According to the capacitor array of the present invention, the low dielectric constant portion having a lower dielectric constant than that of the dielectric substrate is formed between the adjacent first capacitor electrodes of the dielectric substrate. The portion between them has a low dielectric constant, and as a result, even if the capacitor electrodes are brought close to each other, an increase in stray capacitance can be avoided, and capacitors can be separated from each other. Therefore, the distance between the capacitor electrodes can be made smaller than that of the conventional one, the area of the dielectric substrate can be made smaller accordingly, and the miniaturization of parts can be realized, the occurrence of cracks can be avoided, and the cost of parts can be reduced. .
また、誘電体基板の第１コンデンサ電極間部分に、酸化
性雰囲気中でレーザーを照射して空隙部とこれを充填す
る低誘電率部とを同時に形成したので誘電体基板の第１
コンデンサ電極間部分に浮遊容量の増大を回避できるシ
ールドを容易確実に形成できる。In addition, the gap between the first capacitor electrodes of the dielectric substrate is irradiated with the laser in the oxidizing atmosphere to simultaneously form the void portion and the low dielectric constant portion filling the void portion.
A shield that can avoid an increase in stray capacitance can be easily and reliably formed between the capacitor electrodes.
以下、本発明の実施例について説明する。 Examples of the present invention will be described below.
第１図は本発明の第１実施例によるコンデンサアレイを
説明するための図であり、図中、第４図と同一符号は同
一又は相当部分を示す。FIG. 1 is a diagram for explaining a capacitor array according to a first embodiment of the present invention. In the figure, the same symbols as those in FIG. 4 indicate the same or corresponding parts.
本実施例のコンデンサアレイ１は、例えばＢａＴｉＯ３
系セラミックスを主成分とする誘電体基板２の上面，下
面に、それぞれＡｇ厚膜ペースト等をスクリーン印刷し
て複数の第１コンデンサ電極３，共通電極としての第２
コンデンサ電極４を形成するとともに、これらの第１，
第２コンデンサ電極３，４にリード端子（図示せず）を
半田付け接続して構成されており、基本的構造は従来と
同様である。なお、必要により、上記誘電体基板２の外
表面を絶縁性樹脂等により被覆してもよい。The capacitor array 1 of this embodiment is made of, for example, BaTiO 3.
A plurality of first capacitor electrodes 3 and a second common electrode 2 are formed by screen-printing Ag thick film paste or the like on the upper surface and the lower surface of the dielectric substrate 2 containing ceramics as a main component.
While forming the capacitor electrode 4, the first of these
A lead terminal (not shown) is connected to the second capacitor electrodes 3 and 4 by soldering, and the basic structure is the same as the conventional one. If necessary, the outer surface of the dielectric substrate 2 may be coated with an insulating resin or the like.
そして、本実施例の上記隣合う第１コンデンサ電極３の
間には低誘電率部６が形成されている。この低誘電率部
６は、上記誘電体基板２に、幅方向に延びる第１コンデ
ンサ電極３の縁部３ａに沿って等間隔ごとに形成された
ミシン目状の孔部７により構成されており、該孔部７は
上記基板２を貫通して形成されている。ここで、上記孔
部７は、酸化性雰囲気中でレーザー照射することによっ
て形成されたものであり、該孔部７の周縁部分は上記レ
ーザー照射によって他の部分より誘電率が低くなってい
る。また、この孔部７の深さは貫通させないで途中まで
形成した場合も、その深さに応じた効果が得られる。The low dielectric constant portion 6 is formed between the adjacent first capacitor electrodes 3 of this embodiment. The low dielectric constant portion 6 is composed of perforated holes 7 formed in the dielectric substrate 2 at equal intervals along the edge 3a of the first capacitor electrode 3 extending in the width direction. The hole 7 is formed so as to penetrate the substrate 2. Here, the hole 7 is formed by laser irradiation in an oxidizing atmosphere, and the peripheral portion of the hole 7 has a lower dielectric constant than other portions due to the laser irradiation. Further, even when the depth of the hole 7 is formed halfway without penetrating, the effect corresponding to the depth can be obtained.
次に本実施例の作用効果について説明する。Next, the function and effect of this embodiment will be described.
本実施例のコンデンサアレイ１によれば、隣接する第１
コンデンサ電極３間に、レーザー照射によって低誘電率
部６を形成したので、上記各孔部７内には誘電率が１の
空気が存在し、また孔部７の周囲の誘電体の誘電率が低
下していることから、誘電体基板２の上記隣合うコンデ
ンサ電極３の間の部分だけは、低誘電率となり、これに
より浮遊容量を減少できる。従って、上記コンデンサ電
極３同士を近接させてもコンデンサ同士の分離ができ、
チャンネルセパレーションを良好にできる。その結果、
従来のものよりコンデンサ電極間の距離を狭めることが
できる分、誘電体基板２の面積を小さくできるから、ひ
いては部品の小型化の要請に応じられるとともに、割れ
にくく、しかも部品コストを低減できる。しかもこの場
合、上記第１，第２コンデンサ電極３，４間は、高誘電
率の誘電体基板２により大きな静電容量が確保されてお
り、コンデンサ機能を損なうことはない。According to the capacitor array 1 of this embodiment, the adjacent first
Since the low dielectric constant portion 6 was formed between the capacitor electrodes 3 by laser irradiation, air having a dielectric constant of 1 was present in each of the hole portions 7, and the dielectric constant of the dielectric material around the hole portion 7 was Since it is lowered, only the portion between the adjacent capacitor electrodes 3 of the dielectric substrate 2 has a low dielectric constant, which can reduce the stray capacitance. Therefore, even if the capacitor electrodes 3 are brought close to each other, the capacitors can be separated from each other,
Good channel separation. as a result,
Since the distance between the capacitor electrodes can be made smaller than that of the conventional one, the area of the dielectric substrate 2 can be made smaller, so that it is possible to meet the demand for miniaturization of parts, and it is hard to break and the cost of parts can be reduced. Moreover, in this case, a large capacitance is secured between the first and second capacitor electrodes 3 and 4 by the dielectric substrate 2 having a high dielectric constant, and the capacitor function is not impaired.
第２図は上記第１実施例の変形例を示し、これは上記誘
電体基板２に幅方向に延びる溝部８を、酸化性雰囲気中
でのレーザー照射により形成して、上記低誘電率部６を
構成した例である。この溝部８を形成した場合において
も、隣合うコンデンサ電極３間の誘電率を下げることが
できるので、上記実施例と同様の効果が得られる。FIG. 2 shows a modification of the first embodiment, in which a groove portion 8 extending in the width direction is formed in the dielectric substrate 2 by laser irradiation in an oxidizing atmosphere, and the low dielectric constant portion 6 is formed. It is an example of configuring. Even when the groove portion 8 is formed, the dielectric constant between the adjacent capacitor electrodes 3 can be lowered, so that the same effect as in the above embodiment can be obtained.
次に第２実施例について説明する。Next, a second embodiment will be described.
本実施例は、酸化雰囲気中、例えば大気中、あるいは大
気中にさらに酸素を加えて誘電体基板の焼成時より酸素
分圧を高く設定した酸化雰囲気中において、レーザー１
０を照射することにより、誘電体基板２に幅方向に延び
る溝部９を溶融形成する（第３図(a)参照）と同時に、
上記誘電体基板２のＢａＴｉＯ３よりはるかに誘電率の
低いＴｉＯ２等の低誘電体１１を析出させて低誘電率部
６を構成した例である。In this example, the laser 1 is used in an oxidizing atmosphere, for example, in the atmosphere or in an oxidizing atmosphere in which oxygen is further added to the atmosphere to set the oxygen partial pressure higher than that at the time of firing the dielectric substrate.
By irradiating 0, the groove portion 9 extending in the width direction is melted and formed in the dielectric substrate 2 (see FIG. 3 (a)), and at the same time,
This is an example in which the low dielectric constant portion 6 is formed by depositing a low dielectric constant 11 such as TiO 2 having a dielectric constant much lower than that of BaTiO 3 of the dielectric substrate 2.
本実施例によれば、レーザー１０の照射により形成され
た溝部９内に、誘電体基板２よりはるかに低い誘電率の
低誘電体１１を析出させたので、隣合うコンデンサ電極
３の間の部分が低誘電率の物質で充填されることとな
り、その結果上記コンデンサ電極３同士を近接させても
浮遊容量の増大を回避でき、上述した第１実施例と同様
の効果が得られる。According to the present embodiment, since the low dielectric material 11 having a dielectric constant much lower than that of the dielectric substrate 2 is deposited in the groove portion 9 formed by the irradiation of the laser 10, the portion between the adjacent capacitor electrodes 3 is deposited. Will be filled with a substance having a low dielectric constant, and as a result, even if the capacitor electrodes 3 are brought close to each other, an increase in stray capacitance can be avoided, and the same effect as in the first embodiment described above can be obtained.
また、上記低誘電率部６は、レーザー照射により誘電体
基板２の幅方向にミシン目状に形成して構成してもよ
い。Further, the low dielectric constant portion 6 may be formed by perforating in the width direction of the dielectric substrate 2 by laser irradiation.
さらに、上記レーザー１０の照射時間は、誘電体基板２
上に第１コンデンサ電極３を形成した後、又は該電極膜
３を形成する前のどちらでもよい。Further, the irradiation time of the laser 10 is the dielectric substrate 2
It may be either after forming the first capacitor electrode 3 on the upper side or before forming the electrode film 3.
さらにまた、上記コンデンサ電極３を蒸発し易い、例え
ばＡｌで形成する場合は、上記基板２の上面に連続して
コンデンサ電極３を形成し、しかる後、レーザー照射に
より電極膜３の分離と溝部９の形成とを同時に行なうこ
とができる。また、低誘電率物質を形成し易いように、
上記照射する部分に予め所定の添加物を塗布しておいて
もよい また、上記第１，第２実施例では、ＢａＴｉＯ３からな
る誘電体基板を例にとって説明したが、本発明は勿論、
ＳｒＴｉＯ３を主成分とするもの等他のセラミックス製
基板にも採用できる。Furthermore, when the capacitor electrode 3 is easily evaporated, for example, when it is formed of Al, the capacitor electrode 3 is continuously formed on the upper surface of the substrate 2, and then the electrode film 3 is separated by laser irradiation and the groove portion 9 is formed. Can be formed simultaneously. Further, in order to easily form a low dielectric constant material,
A predetermined additive may be applied in advance to the portion to be irradiated. In the first and second embodiments, the dielectric substrate made of BaTiO 3 has been described as an example.
It can also be applied to other ceramic substrates such as those containing SrTiO 3 as a main component.
以上のように本発明に係るコンデンサアレイによれば、
隣合う第１コンデンサ電極間に、誘電体基板より誘電率
の低い低誘電率部を形成したので、隣接するコンデンサ
電極間の浮遊容量を増大させることなく該電極膜間を狭
めることができ、ひいては部品の小型化を実現できると
ともに、部品コストを低減できる効果がある。また上記
低誘電率部のレーザー照射によって形成したので、この
低誘電率部の形状が容易である。As described above, according to the capacitor array of the present invention,
Since the low dielectric constant portion having a lower dielectric constant than the dielectric substrate is formed between the adjacent first capacitor electrodes, it is possible to narrow the space between the electrode films without increasing the stray capacitance between the adjacent capacitor electrodes. It is possible to reduce the size of parts and reduce the cost of parts. Further, since the low dielectric constant portion is formed by laser irradiation, the shape of the low dielectric constant portion is easy.
第１図は本発明の第１実施例によるコンデンサアレイを
説明するための図であり、第１図(a)はその平面図、第
１図(b)はその断面図、第２図は上記実施例の変形例を
示す断面図、第３図(a)，(b)は本発明の第２実施例によ
るコンデンサアレイを示す断面図、第４図(a)，(b)はそ
れぞれ従来のコンデンサアレイを示す平面図，正面図、
第５図(a)，(b)はそれぞれ上記コンデンサアレイの等価
回路図である。 図において、１はコンデンサアレイ、２は誘電体基板、
３は第１コンデンサ電極、４は第２コンデンサ電極、６
は低誘電率部、７は孔部、８，９は溝部、１１は低誘電
体である。FIG. 1 is a diagram for explaining a capacitor array according to a first embodiment of the present invention. FIG. 1 (a) is a plan view thereof, FIG. 1 (b) is a sectional view thereof, and FIG. FIG. 3 (a) and FIG. 3 (b) are sectional views showing a capacitor array according to a second embodiment of the present invention, and FIGS. 4 (a) and 4 (b) are conventional sectional views, respectively. Plan view, front view, showing the capacitor array
5 (a) and 5 (b) are equivalent circuit diagrams of the above-mentioned capacitor array, respectively. In the figure, 1 is a capacitor array, 2 is a dielectric substrate,
3 is the first capacitor electrode, 4 is the second capacitor electrode, 6
Is a low dielectric constant portion, 7 is a hole portion, 8 and 9 are groove portions, and 11 is a low dielectric material.
Claims (1)
間隔をあけて複数の第１コンデンサ電極を形成し、他主
面に上記第１コンデンサ電極と上記基板を挟んで対向す
る第２コンデンサ電極を形成してなるコンデンサアレイ
において、上記誘電体基板の上記隣合う第１コンデンサ
電極の間の部分に、酸化性雰囲気中でレーザー照射する
ことにより、誘電体基板を溶融させてなる空隙部と、誘
電体基板から低誘電体を溶融析出させてなり上記空隙部
を充填する該誘電体基板より誘電率の低い低誘電率部と
を同時形成したことを特徴とするコンデンサアレイ。1. A plurality of first capacitor electrodes are formed on a main surface of a ceramics substrate made of ceramics at predetermined intervals, and a second main surface is opposed to the first capacitor electrode with the substrate interposed therebetween. In a capacitor array in which capacitor electrodes are formed, a space formed by melting the dielectric substrate by irradiating a laser between the adjacent first capacitor electrodes of the dielectric substrate in an oxidizing atmosphere. And a low dielectric constant portion having a lower dielectric constant than the dielectric substrate, which is formed by melting and depositing a low dielectric material from the dielectric substrate and fills the void portion, at the same time.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63011578A JPH0630323B2 (en) | 1988-01-21 | 1988-01-21 | Capacitor array |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63011578A JPH0630323B2 (en) | 1988-01-21 | 1988-01-21 | Capacitor array |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01185913A JPH01185913A (en) | 1989-07-25 |
| JPH0630323B2 true JPH0630323B2 (en) | 1994-04-20 |
Family
ID=11781796
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63011578A Expired - Fee Related JPH0630323B2 (en) | 1988-01-21 | 1988-01-21 | Capacitor array |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0630323B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5583738A (en) * | 1993-03-29 | 1996-12-10 | Murata Manufacturing Co., Ltd. | Capacitor array |
| JP6862668B2 (en) * | 2016-03-25 | 2021-04-21 | ヤマハ株式会社 | Board and position detector |
| WO2017170389A1 (en) * | 2016-03-30 | 2017-10-05 | 京セラ株式会社 | High frequency substrate, high frequency package and high frequency module |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5842223A (en) * | 1981-09-04 | 1983-03-11 | 松下電器産業株式会社 | Composite electronic part unit |
| JPS5840813A (en) * | 1981-09-04 | 1983-03-09 | ティーディーケイ株式会社 | Thick film composite part |
| JPS6020925U (en) * | 1983-07-21 | 1985-02-13 | 株式会社クボタ | Engine cover structure for agricultural machinery |
| JPS614420U (en) * | 1984-06-12 | 1986-01-11 | 株式会社村田製作所 | composite feedthrough capacitor |
-
1988
- 1988-01-21 JP JP63011578A patent/JPH0630323B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01185913A (en) | 1989-07-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |