JPH01185913A - Capacity array - Google Patents
Capacity arrayInfo
- Publication number
- JPH01185913A JPH01185913A JP63011578A JP1157888A JPH01185913A JP H01185913 A JPH01185913 A JP H01185913A JP 63011578 A JP63011578 A JP 63011578A JP 1157888 A JP1157888 A JP 1157888A JP H01185913 A JPH01185913 A JP H01185913A
- Authority
- JP
- Japan
- Prior art keywords
- dielectric substrate
- dielectric constant
- capacitor
- capacitor electrodes
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000003990 capacitor Substances 0.000 claims abstract description 84
- 239000000758 substrate Substances 0.000 claims abstract description 53
- 230000001590 oxidative effect Effects 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims 1
- 238000002844 melting Methods 0.000 claims 1
- 230000000694 effects Effects 0.000 description 7
- 239000000919 ceramic Substances 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000003973 paint Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、１つの誘電体基板に複数のコンデンサを構成
してなるコンデンサアレイに関し、特に隣接するコンデ
ンサ電極の間隔を浮遊容量を増大させることなく狭める
ことにより、部品の小型化。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a capacitor array formed by configuring a plurality of capacitors on one dielectric substrate. By making it narrower, the parts can be made smaller.
コスト低減を実現できるようにしたコンデンサアレイの
構造に関する。The present invention relates to a capacitor array structure that enables cost reduction.
従来から、コンデンサは、抵抗やコイル等と組み合わせ
て、電子回路のなかで基本的な機能を果たす部品として
多用されている。このようなコンデンサの一例として、
従来、第４図に示すコンデンサアレイがある。このコン
デンサアレイｌは、セラミックス製誘電体基板２の上面
に所定間隔をあけて３個の第１コンデンサ電極３を形成
し、上記誘電体基板２の下面の略全面に上記第１コンデ
ンサ電極３と該基板２を挟んで対向する共通電極として
の第２コンデンサ電掻４を形成するとともに、上記それ
ぞれの第１．第２コンデンサ電極３゜４にリード端子５
を半田付は接続して構成されている。これにより１つの
部品素子内に３個のコンデンサが構成されている。Conventionally, capacitors have been widely used as components that perform basic functions in electronic circuits in combination with resistors, coils, and the like. An example of such a capacitor is
Conventionally, there is a capacitor array shown in FIG. This capacitor array l has three first capacitor electrodes 3 formed at predetermined intervals on the upper surface of a ceramic dielectric substrate 2, and the first capacitor electrodes 3 formed on substantially the entire lower surface of the dielectric substrate 2. A second capacitor electrode 4 as a common electrode facing each other with the substrate 2 in between is formed, and each of the first and second capacitors 4 is formed as a common electrode. Lead terminal 5 to second capacitor electrode 3゜4
The soldering is made by connecting. As a result, three capacitors are configured within one component element.
また、上記コンデンサアレイ１は、誘電体基板２上に複
数のコンデンサ電極３を並列させることから、できるだ
け該電極膜３間の距離βを接近させることにより誘電体
基板２の面積を小さくして、部品の小型化の要請に応え
るようにしている。Furthermore, since the capacitor array 1 has a plurality of capacitor electrodes 3 arranged in parallel on the dielectric substrate 2, the area of the dielectric substrate 2 can be reduced by making the distance β between the electrode films 3 as close as possible. We are responding to the demand for smaller parts.
しかしながら、上記従来のコンデンサアレイ１において
は、−船釣に静電容量を太き（するために上記誘電体基
板２に誘電率の高いＢａＴｉＯ３系セラミックスを採用
しており、上記隣合うコンデンサ電極３間が高誘電率の
物質で充填された構造となることから、上記コンデンサ
電極３間の距離ｉが近づくほど該電極膜３間の浮遊容量
Ｃが増太し、その結果コンデンサ同士を交流的に分離で
きなくなるという問題点がある。即ち、上記コンデンサ
アレイ１の理想の等価回路（第５図ｔａ＋参照）に対し
て、実際の等価回路（第５図（ｂｌ参照）には余分の浮
遊容量Ｃが存在していることになり、特性に悪影響を与
える場合がある。従って、上記コンデンサ同士の分離を
はかるために浮遊容量Ｃの発生を抑えられる距離ｌを確
保する必要があることから、それだけ上記誘電体基板２
の面積が大きくなり、結局、部品の小型化の要請に十分
応えられていない。また、上記誘電体基板は面積が増大
した分割れ易くなるとともに、部品コストが上昇すると
いう問題点もある。However, in the above-mentioned conventional capacitor array 1, in order to increase the capacitance for boat fishing, BaTiO3 ceramics with a high dielectric constant is used for the dielectric substrate 2, and the adjacent capacitor electrodes 3 Since the space between the capacitor electrodes 3 is filled with a material having a high dielectric constant, the stray capacitance C between the electrode films 3 increases as the distance i between the capacitor electrodes 3 becomes closer, and as a result, the capacitors are connected to each other in an alternating current. There is a problem that separation is impossible.In other words, compared to the ideal equivalent circuit of the capacitor array 1 (see ta+ in FIG. 5), the actual equivalent circuit (see bl in FIG. 5) has an extra stray capacitance C. Therefore, in order to isolate the capacitors mentioned above, it is necessary to secure a distance l that can suppress the generation of stray capacitance C, so the above-mentioned Dielectric substrate 2
As a result, the demand for smaller parts cannot be fully met. Further, the dielectric substrate has an increased area and is easily divided, and there are also problems in that the cost of parts increases.
本発明の目的は、上記浮遊容量を増大させることなくコ
ンデンサ電極を近接して配置でき、ひいては部品の小型
化を実現できるとともに、部品コストを低減できるコン
デンサ７レイを提供することにある。An object of the present invention is to provide a capacitor 7 lay in which capacitor electrodes can be disposed close to each other without increasing the stray capacitance, which can further reduce the size of the components and reduce the cost of the components.
そこで本発明は、誘電体基板の表面に所定の間隔をあけ
て複数の第１コンデンサ電極が、裏面に上記第１コンデ
ンサｔｔｉと上記基板を挟んで対向する第２コンデンサ
電極がそれぞれ形成されたコンデンサアレイにおいて、
上記誘電体基板の上記隣合う第１コンデンサ電極の間に
、上記誘電体基板より誘電率の低い低誘電率部を形成し
たことを特徴としている。Therefore, the present invention provides a capacitor in which a plurality of first capacitor electrodes are formed on the front surface of a dielectric substrate at predetermined intervals, and a second capacitor electrode is formed on the back surface of the dielectric substrate, the second capacitor electrodes facing the first capacitor tti with the substrate in between. In the array,
The present invention is characterized in that a low dielectric constant portion having a dielectric constant lower than that of the dielectric substrate is formed between the adjacent first capacitor electrodes of the dielectric substrate.
ここで、本発明の低誘電率部は、例えば上記誘電体基板
に、幅方向の所定間隔ごとに穿設された複数の孔部、又
は切り欠き形成された溝部により構成することができる
。つまり、これらの低誘電率部は、上記隣接する第１コ
ンデンサ電極間の孔部又は溝部に存在する空気により形
成するという意味である。Here, the low dielectric constant portion of the present invention can be constituted by, for example, a plurality of holes bored at predetermined intervals in the width direction or grooves formed by cutouts in the dielectric substrate. In other words, these low dielectric constant parts are formed by air existing in the holes or grooves between the adjacent first capacitor electrodes.
また、上記低誘電率部は、例えば上記孔部又は溝部内に
低誘電率の絶縁塗料を充填することにより、あるいは酸
化雰囲気中でレーザー照射し、上記誘電体基板を溶融す
ることにより形成することもできる。このレーザー照射
の場合は、例えば基板を構成するＢａＴｉ０ｔがＴ ｉ
Ｏｚとなり、この部分の誘電率が大幅に低下すること
から実現できるものである。The low dielectric constant portion may be formed, for example, by filling the hole or groove with a low dielectric constant insulating paint, or by irradiating a laser in an oxidizing atmosphere to melt the dielectric substrate. You can also do it. In the case of this laser irradiation, for example, BaTi0t constituting the substrate is Ti
This can be realized because the dielectric constant of this portion is significantly reduced.
本発明に係るコンデンサアレイによれば、誘電体基板の
隣合う第１コンデンサ１ｉ極間に、誘電体基板より誘電
率の低い低誘電率部を形成したので、誘電体基板の上記
隣合うコンデンサ電極の間の部分が低誘電率となり、そ
の結果上記コンデンサ電極同士を近接させても浮遊容量
の増大を回避でき、コンデンサ同士の分離ができる。従
って、従来のものよりコンデンサ電極間の距離を狭める
ことができ、それだけ誘電体基板の面積を小さくでき、
ひいては部品の小型化を実現できるとともに、割れの発
生を回避でき、しかも部品コストを低減できる。According to the capacitor array according to the present invention, since the low dielectric constant portion having a dielectric constant lower than that of the dielectric substrate is formed between the adjacent first capacitors 1i of the dielectric substrate, the adjacent capacitor electrodes of the dielectric substrate The part between them has a low dielectric constant, and as a result, even if the capacitor electrodes are brought close to each other, an increase in stray capacitance can be avoided, and the capacitors can be separated from each other. Therefore, the distance between the capacitor electrodes can be narrowed compared to conventional ones, and the area of the dielectric substrate can be reduced accordingly.
As a result, parts can be made smaller, cracks can be avoided, and parts costs can be reduced.
以下、本発明の実施例について説明する。 Examples of the present invention will be described below.
第１図は本発明の第１実施例によるコンデンサプレイを
説明するための図であり、図中、第４図と同一符号は同
−又は相当部分を示す。FIG. 1 is a diagram for explaining a capacitor play according to a first embodiment of the present invention, and in the figure, the same reference numerals as in FIG. 4 indicate the same or corresponding parts.
本実施例のコンデンサアレイ１は、例えばＢａＴ ｉＯ
ｓ系セラミックスを主成分とする誘電体基板２の上面、
下面に、それぞれＡｇ厚膜ペースト等をスクリーン印刷
して複数の第１コンデンサ電極３．共通電極としての第
２コンデンサ電極４を形成するとともに、これらの第１
．第２コンデンサ電極３．４にリード端子（図示せず）
を半田付は接続して構成されており、基本的構造は従来
と同様である。なお、必要により、上記誘電体基板２の
外表面を絶縁性樹脂等により被覆してもよい。The capacitor array 1 of this embodiment is made of, for example, BaTiO
The upper surface of a dielectric substrate 2 mainly composed of s-based ceramics,
A plurality of first capacitor electrodes 3. are formed on the bottom surface by screen printing Ag thick film paste or the like. While forming the second capacitor electrode 4 as a common electrode, these first
．． Lead terminal (not shown) to the second capacitor electrode 3.4
The basic structure is the same as the conventional one. Note that, if necessary, the outer surface of the dielectric substrate 2 may be covered with an insulating resin or the like.
そして、本実施例の上記隣合う第１コンデンサ電橿３の
間には低誘電率部６が形成されている。A low dielectric constant portion 6 is formed between the adjacent first capacitor wires 3 of this embodiment.
この低誘電率部６は、上記誘電体基板２に、幅方向に延
びる第１コンデンサ電極３の縁部３ａに沿って等間隔ご
とに形成されたミシン目状の孔部７により構成されてお
り、該孔部７は上記基板２を貫通して形成されている。The low dielectric constant portion 6 is constituted by perforation-like holes 7 formed in the dielectric substrate 2 at equal intervals along the edge 3a of the first capacitor electrode 3 extending in the width direction. , the hole 7 is formed to penetrate the substrate 2.
ここで、上記孔部７は、誘電体基板２の製造時において
、グリーンシートを形成した際に形成してもよく、また
焼結生成した後に穿設加工してもよい。また、この孔部
７の深さは貫通させないで途中まで形成した場合も、そ
の深さに応じた効果が得られる。Here, the hole 7 may be formed when the green sheet is formed during the manufacture of the dielectric substrate 2, or may be formed after sintering. Furthermore, even if the hole 7 is formed halfway without penetrating it, an effect corresponding to the depth can be obtained.
次に本実施例の作用効果について説明する。Next, the effects of this embodiment will be explained.
本実施例のコンデンサアレイ１によれば、隣接する第１
コンデンサ電極３間に、複数の孔部７により低誘電率部
６を形成したので、上記各孔部７内には誘電率が１の空
気が存在するから、誘電体基板２の上記隣合うコンデン
サ電極３の間の部分だけは、低誘電率となり、これによ
り浮遊容量を減少できる。従って、上記コンデンサ電極
３間士を近接させてもコンデンサ同士の分離ができ、チ
ャンネルセパレーシッンを良好にできる。その結果、従
来のものよりコンデンサ電極間の距離を狭めることがで
きる分、誘電体基板２の面積を小さくできるから、ひい
ては部品の小型化の要請に応じられるとともに、割れに
くく、しかも部品コストを低減できる。しかもこの場合
、上記第１．第２コンデンサ電極３．４間は、高誘電率
の誘電体基板２により大きな静電容量が確保されており
、コンデンサ機能を損なうことはない。According to the capacitor array 1 of this embodiment, the adjacent first
Since the low dielectric constant portion 6 is formed between the capacitor electrodes 3 by the plurality of holes 7, air with a dielectric constant of 1 exists in each hole 7, so that the adjacent capacitors of the dielectric substrate 2 Only the portion between the electrodes 3 has a low dielectric constant, thereby reducing stray capacitance. Therefore, even if the three capacitor electrodes are placed close to each other, the capacitors can be separated from each other, and channel separation can be improved. As a result, the distance between the capacitor electrodes can be narrowed compared to conventional ones, and the area of the dielectric substrate 2 can be reduced, which in turn can meet the demand for smaller components, making them less likely to break, and reducing component costs. can. Moreover, in this case, the above 1. A large capacitance is ensured between the second capacitor electrodes 3 and 4 by the high dielectric constant dielectric substrate 2, and the capacitor function is not impaired.
第２図は上記第１実施例の変形例を示し、これは上記誘
電体基板２に幅方向に延びる溝部８を切り欠き形成して
、上記低誘電率部６を構成した例である。この溝部８を
形成した場合においても、隣合うコンデンサ電極３間の
誘電率を下げることができるので、上記実施例と同様の
効果が得られる。FIG. 2 shows a modification of the first embodiment, in which the dielectric substrate 2 is cut out with grooves 8 extending in the width direction to form the low dielectric constant portions 6. Even when this groove portion 8 is formed, the dielectric constant between adjacent capacitor electrodes 3 can be lowered, so that the same effect as in the above embodiment can be obtained.
次に第２実施例について説明する。Next, a second embodiment will be described.
本実施例は、酸化雰囲気中、例えば大気中、あるいは大
気中にさらに酸素を加えて誘電体基板の焼成時より酸素
分圧を高く設定した酸化雰囲気中において、レーザー１
０を照射することにより、誘電体基板２に幅方向に延び
る溝部９を溶融形成する（第３図（ａｌ参照）と同時に
、上記誘電体基板２のＢ ａ Ｔ ｉ Ｏ３よりはるか
に誘電率の低いＴｉＯ２等の低誘電体１１を析出させて
低誘電率部６を構成した例である。In this example, the laser 1
By irradiating the dielectric substrate 2 with B a T i O 3 , grooves 9 extending in the width direction are melted and formed in the dielectric substrate 2 (see FIG. 3 (al)). This is an example in which the low dielectric constant portion 6 is formed by depositing a low dielectric material 11 such as low TiO2.
本実施例によれば、レーザーＩＯの照射により形成され
た溝部９内に、誘電体基板２よりはるかに低い誘電率の
低誘電体１１を析出させたので、隣合うコンデンサ電極
３の間の部分が低誘電率の物質で充填されることとなり
、その結果上記コンデンサ電極３同士を近接させても浮
遊容量の増大を回避でき、上述した第１実施例と同様の
効果が得られる。According to this embodiment, since the low dielectric material 11 having a much lower dielectric constant than the dielectric substrate 2 is deposited in the groove portion 9 formed by laser IO irradiation, the portion between adjacent capacitor electrodes 3 is is filled with a substance having a low dielectric constant, and as a result, an increase in stray capacitance can be avoided even if the capacitor electrodes 3 are brought close to each other, and the same effect as in the first embodiment described above can be obtained.
なお、上記第２実施例では、酸化雰囲気中におけるレー
ザー照射により低誘電体１１を析出させた場合を例にと
って説明したが、上記誘電体基板２に、第１実施例にお
いて形成したものと同様の孔部や溝部を形成し、これら
の内部に、誘電体基板２より誘電率の低い絶縁塗料を充
填、塗布してもよく、この場合においても上記第２実施
例と略同様の効果が得られる。In the second embodiment, the case where the low dielectric material 11 was deposited by laser irradiation in an oxidizing atmosphere was explained as an example. Holes and grooves may be formed, and an insulating paint having a lower dielectric constant than the dielectric substrate 2 may be filled and applied inside these, and in this case as well, substantially the same effect as in the second embodiment can be obtained. .
また、上記低誘電率部６は、レーザー照射により誘電体
基板２の幅方向にミシン目状に形成して構成してもよい
。Further, the low dielectric constant portion 6 may be formed in the form of a perforation in the width direction of the dielectric substrate 2 by laser irradiation.
さらに、上記レーザー１０の照射時期は、誘電体基板ｚ
上に第１コンデンサ電極３を形成した後、又は該電極膜
３を形成する前のどちらでもよい。Furthermore, the timing of irradiation with the laser 10 is set to the dielectric substrate z.
This may be done either after forming the first capacitor electrode 3 thereon or before forming the electrode film 3 thereon.
さらにまた、上記コンデンサ電極３を葵発し易い、例え
ばＡＩ！で形成する場合は、上記基板２の上面に連続し
てコンデンサ電極３を形成し、しかる後、レーザー照射
により電極膜３の分離と溝部９の形成とを同時に行なう
ことができる。また、低誘電率物質を形成し易いように
、上記照射する部分に予め所定の添加物を塗布しておい
てもよいまた、上記第１．第２実施例では、ＢａＴｉＯ
３からなる誘電体基板を例にとって説明したが、本発明
は勿論、Ｓ ｒ Ｔ ｉ Ｏ：＋を主成分とするもの等
地のセラミックス製基板にも採用できる。Furthermore, the capacitor electrode 3 is likely to be exposed to heat, for example, AI! In this case, the capacitor electrode 3 is formed continuously on the upper surface of the substrate 2, and then the electrode film 3 can be separated and the groove 9 can be formed at the same time by laser irradiation. Further, in order to facilitate the formation of a low dielectric constant material, a predetermined additive may be applied to the irradiated portion in advance. In the second embodiment, BaTiO
Although the present invention has been described by taking as an example a dielectric substrate made of S.sub.rT.sub.3, the present invention can of course also be applied to a ceramic substrate having S.sub.rT.sub.iO:+ as a main component.
以上のように本発明に係るコンデンサアレイによれば、
隣合う第１コンデンサ電掻間に、誘電体基板より誘電率
の低い低誘電率部を形成したので、隣接するコンデンサ
電極間の浮遊容量を増大させることなく該電極膜間を狭
めることができ、ひいては部品の小型化を実現できると
ともに、部品コストを低減できる効果がある。As described above, according to the capacitor array according to the present invention,
Since a low dielectric constant portion having a dielectric constant lower than that of the dielectric substrate is formed between the adjacent first capacitor electrodes, the distance between the electrode films can be narrowed without increasing the stray capacitance between the adjacent capacitor electrodes, As a result, it is possible to realize miniaturization of parts and also to reduce the cost of parts.
第１図は本発明の第１実施例によるコンデンサアレイを
説明するための図であり、第１図ｆａ）はその平面図、
第１図価）はその断面図、第２図は上記実施例の変形例
を示す断面図、第３図（ａｌ、 （ｂ）は本発明の第２
実施例によるコンデンサアレイを示す断面閲、第４図（
ａ）、■）はそれぞれ従来のコンデンサアレイを示す平
面図、正面図、第５図ｆａ）、 （ｂｌはそれぞれ上記
コンデンサアレイの等価回路図である。
図において、１はコンデンサアレイ、２は？’ａＮ体基
板、３は第１コンデンサ電極、４は第２コンデンサ電極
、６は低誘電率部、７は孔部、８．９は溝部、１１は低
誘電体である。FIG. 1 is a diagram for explaining a capacitor array according to a first embodiment of the present invention, and FIG. 1 fa) is a plan view thereof;
Figure 1) is a cross-sectional view of the same, Figure 2 is a cross-sectional view showing a modification of the above embodiment, Figure 3 (al), (b) is a cross-sectional view of the second embodiment of the present invention.
A cross-sectional view showing a capacitor array according to an embodiment, FIG.
Figures a) and ■) are a plan view and a front view showing a conventional capacitor array, respectively, and Figure 5 fa) and (bl are equivalent circuit diagrams of the above capacitor array, respectively. In the figures, 1 is a capacitor array, and 2 is a front view. 'aN body substrate, 3 is a first capacitor electrode, 4 is a second capacitor electrode, 6 is a low dielectric constant portion, 7 is a hole, 8.9 is a groove portion, and 11 is a low dielectric material.
Claims (4)
第１コンデンサ電極を形成し、他主面に上記第１コンデ
ンサ電極と上記基板を挟んで対向する第２コンデンサ電
極を形成してなるコンデンサアレイにおいて、上記誘電
体基板の上記隣合う第１コンデンサ電極の間に、上記誘
電体基板より誘電率の低い低誘電率部を形成したことを
特徴とするコンデンサアレイ。(1) A plurality of first capacitor electrodes are formed at predetermined intervals on one main surface of a dielectric substrate, and a second capacitor electrode is formed on the other main surface, facing the first capacitor electrode with the substrate in between. A capacitor array comprising: a low dielectric constant portion having a dielectric constant lower than that of the dielectric substrate is formed between the adjacent first capacitor electrodes of the dielectric substrate.
って穿設された複数の孔部により構成されていることを
特徴とする特許請求の範囲第１項記載のコンデンサアレ
イ。(2) The capacitor array according to claim 1, wherein the low dielectric constant portion is constituted by a plurality of holes formed in the dielectric substrate along the width direction.
成された幅方向に延びる溝部により構成されていること
を特徴とする特許請求の範囲第１項記載のコンデンサア
レイ。(3) The capacitor array according to claim 1, wherein the low dielectric constant portion is constituted by a groove portion formed in the dielectric substrate and extending in the width direction.
射により上記誘電体基板を溶融することにより形成され
ていることを特徴とする特許請求の範囲第１項記載のコ
ンデンサアレイ。(4) The capacitor array according to claim 1, wherein the low dielectric constant portion is formed by melting the dielectric substrate by laser irradiation in an oxidizing atmosphere.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63011578A JPH0630323B2 (en) | 1988-01-21 | 1988-01-21 | Capacitor array |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63011578A JPH0630323B2 (en) | 1988-01-21 | 1988-01-21 | Capacitor array |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01185913A true JPH01185913A (en) | 1989-07-25 |
| JPH0630323B2 JPH0630323B2 (en) | 1994-04-20 |
Family
ID=11781796
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63011578A Expired - Fee Related JPH0630323B2 (en) | 1988-01-21 | 1988-01-21 | Capacitor array |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0630323B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5583738A (en) * | 1993-03-29 | 1996-12-10 | Murata Manufacturing Co., Ltd. | Capacitor array |
| WO2017164377A1 (en) * | 2016-03-25 | 2017-09-28 | ヤマハ株式会社 | Substrate and position detection device |
| JPWO2017170389A1 (en) * | 2016-03-30 | 2019-01-17 | 京セラ株式会社 | High frequency substrate, high frequency package and high frequency module |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5840813A (en) * | 1981-09-04 | 1983-03-09 | ティーディーケイ株式会社 | Thick film composite part |
| JPS5842223A (en) * | 1981-09-04 | 1983-03-11 | 松下電器産業株式会社 | Composite electronic part unit |
| JPS6020925U (en) * | 1983-07-21 | 1985-02-13 | 株式会社クボタ | Engine cover structure for agricultural machinery |
| JPS614420U (en) * | 1984-06-12 | 1986-01-11 | 株式会社村田製作所 | composite feedthrough capacitor |
-
1988
- 1988-01-21 JP JP63011578A patent/JPH0630323B2/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5840813A (en) * | 1981-09-04 | 1983-03-09 | ティーディーケイ株式会社 | Thick film composite part |
| JPS5842223A (en) * | 1981-09-04 | 1983-03-11 | 松下電器産業株式会社 | Composite electronic part unit |
| JPS6020925U (en) * | 1983-07-21 | 1985-02-13 | 株式会社クボタ | Engine cover structure for agricultural machinery |
| JPS614420U (en) * | 1984-06-12 | 1986-01-11 | 株式会社村田製作所 | composite feedthrough capacitor |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5583738A (en) * | 1993-03-29 | 1996-12-10 | Murata Manufacturing Co., Ltd. | Capacitor array |
| WO2017164377A1 (en) * | 2016-03-25 | 2017-09-28 | ヤマハ株式会社 | Substrate and position detection device |
| JP2017173275A (en) * | 2016-03-25 | 2017-09-28 | ヤマハ株式会社 | Substrate and position detector |
| CN108885126A (en) * | 2016-03-25 | 2018-11-23 | 雅马哈株式会社 | Substrate and position detecting device |
| US11002570B2 (en) | 2016-03-25 | 2021-05-11 | Yamaha Corporation | Fixed element and position detection device |
| JPWO2017170389A1 (en) * | 2016-03-30 | 2019-01-17 | 京セラ株式会社 | High frequency substrate, high frequency package and high frequency module |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0630323B2 (en) | 1994-04-20 |
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