JPH06268104A - Tcp semiconductor device and its manufacture - Google Patents

Abstract

PURPOSE:To make the thickness of a sealing resin on the surface of a semiconductor substrate uniform and, at the same time, to uniformly fill up the spaces of in device hole on both sides of the substrate with the sealing resin by making the clearance between the wall of the device hole and substrate on the side on which inner leads are connected to the substrate at longer intervals. CONSTITUTION:The intervals W1 of first-side inner leads 31 connected to the first side of a semiconductor substrate 2 mounted in the device hole 5 of a carrier tape 4 are made longer than those W2 of inner leads 31 connected to the second side of the substrate 2. In such a tape carrier package semiconductor device, the interval L1 between the first side of the hole 5 facing the first side of the substrate 2 and the first side of the substrate 2 is made shorter than that L2 between the second side of the hole 5 facing the second side of the substrate 2 and the second side of the substrate 2.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device (hereinafter referred to as a TCP semiconductor device) using a tape carrier package which is one of the package forms of semiconductor elements, a carrier tape for a TCP semiconductor device, and a method for manufacturing a TCP semiconductor device. .

[0002]

2. Description of the Related Art FIG. 2 is a view for explaining a conventional TCP semiconductor device, FIG. 2a is a sectional view showing a state after resin sealing, and FIG. 2b is a plan view showing a state before resin sealing. is there.
2a is a sectional view taken along line BB of FIG. 2b.

As can be seen from the figure, in recent TCP semiconductor devices, the function of the semiconductor substrate to be mounted has become complicated, and the number of electrodes arranged is often extremely different on opposite sides. That is, the electrodes on each side of the semiconductor substrate were previously relatively evenly arranged,
In recent years, there have been many cases of extremely uneven arrangement. Further, the gap width between the inner leads is becoming narrower due to the increase in the number of electrodes.

In this conventional semiconductor device, a semiconductor substrate is mounted inside the device hole 5 formed in the tape carrier 4. Conductor pattern 3 connected to an electrode formed on a semiconductor substrate 2 mounted on a tape carrier 4
The center 7 of the device hole 5 provided in the tape carrier 4 and the center 6 of the semiconductor substrate 2 are aligned regardless of the number.

In such a semiconductor device, resin encapsulation is usually performed by dropping or applying a softened encapsulating resin (eg, epoxy resin, silicone resin, polyimide resin, etc.) on the surface side of the semiconductor substrate 2. Device hole gap length (indicated by symbol L in the figure) and lead gap width (indicated by symbol W in the figure) from the front surface side of the semiconductor substrate 2 using the property and viscosity.
1, W2) to supply the sealing resin to the device hole 5 on the side surface of the semiconductor substrate 2 through a resin outflow contribution region determined by Do it.

The encapsulating resin 1 serves as a surface protective film for protecting the surface of the semiconductor substrate, and the other encapsulating resins 13 and 14 fill the device holes 5 to prevent adverse effects from the back and side surfaces of the semiconductor substrate 2. Along with maintaining mechanical strength.

In the first side inner lead 33 extending from the first side 53 of the device hole 5 toward the semiconductor substrate 2, the lead gap width (W) is roughly formed (W = W1),
The second side inner lead 34 extending toward the semiconductor substrate 2 from the second side 54 facing the first side 53 of the device hole 5 has a dense lead gap width (W) (W = W2).
ing. For simplicity, the inner lead 3 on the first side
3 and the second side inner leads 34 are evenly arranged.

Now, the area sum S of the resin outflow contribution regions on each side of the device hole will be examined.

Assuming that the lead gap width is W, the device hole gap length is L, and the number of gaps between the leads is N, the area sum S of the resin outflow contribution region is represented by S = W × L × N. For the sake of simplicity, the part where each side intersects will be excluded.

On the first side 53 side of the device hole 5, the first side device hole gap length L is 0.2 mm,
The side inner lead 33 has a lead gap width W1 of 3.0 m.
If m, the number of spaces N1 between the leads is 5, so the area sum S1 of the resin outflow contributing regions on the first side is S1.
= L1 x W1 x N1 = 0.2 x 3.0 x 5 = 3.0 mm
It becomes ² . On the second side 54 side of the device hole 5,
The second side device hole gap length L2 is 0.2 mm,
The lead gap width W2 of the side inner lead 34 is 0.5 m
m, and the number of spaces N2 between leads is 11, the second
The area sum S2 of the resin outflow contribution regions on the side is S2 = L2 ×
W2 × N2 = 0.2 × 0.5 × 11 = 1.1 mm ² .

That is, the ratio of the area sum of the resin outflow contribution regions, S
2 / S1 is 1.1 / 3.0 = 0.367.

Since the ratios of the area sums of the resin outflow contributing regions are deviated in this way, in the resin encapsulating step for producing the TCP semiconductor device, the device holes in which the electrodes formed on the semiconductor substrate 2 are sparsely arranged. 5, the first side 53 side,
There is a significant difference in the amount of resin supplied from the resin supply surface (the surface of the semiconductor substrate 2) side to the side surface side of the semiconductor substrate 2 with the second side 54 side of the device hole 5 where the electrodes are densely arranged, and the resin supply surface side It becomes difficult to make the flow of the sealing resin from the side to the side surface of the semiconductor substrate 2 uniform, and to make the thickness of the resin 1 on the applied side a uniform flat surface. However, it was not possible to obtain a stable shape, and stable production could not be achieved.

In other words, due to the uneven flow of resin,
A part 13 that is too thin is formed, or conversely, a part 14 is formed that has a gap because the sealing resin is not sufficiently supplied.
The sealing shape becomes unbalanced on the left and right sides, and sufficient mechanical strength cannot be ensured, causing cracks due to mechanical stress.

[0014]

SUMMARY OF THE INVENTION According to the present invention, the uneven flow of the sealing resin supplied from the front surface side of the semiconductor substrate to the device hole on the side surface of the semiconductor substrate, which is a problem in the above-described conventional TCP semiconductor device, is evenly distributed. This makes it possible to make the thickness of the sealing resin on the surface of the semiconductor substrate uniform and to evenly fill the device holes on the side surface of the semiconductor substrate with the sealing resin. An object of the present invention is to provide a TCP semiconductor device having a resin blocking shape, a carrier tape for a TCP semiconductor device, and a method for manufacturing a TCP semiconductor device.

[0015]

In order to achieve the above object, according to the present invention, a gap between inner leads of a first side which is connected to a first side of a semiconductor substrate mounted inside a device hole of a carrier tape. In the tape carrier package (TCP) semiconductor device, the width of which is formed larger than the gap width of the second side inner leads connected to the second side of the semiconductor substrate corresponding to the first side, The side length of the first side device hole, which is determined by the side and the first side of the device hole corresponding to the side, is determined by the second side of the semiconductor substrate and the second side of the device hole corresponding thereto. It is formed to be smaller than the gap length of the device hole.

The tape carrier package (TC
P) In the semiconductor device, the center defined by the first side of the semiconductor substrate and the second side of the semiconductor substrate is formed so as to be shifted to the first side from the center defined by the first side and the second side of the device hole. , The first side gap length and the second side gap length are made different.

The tape carrier package (TC
P) In the semiconductor device, the sum of the areas of the sealing resin outflow contributing region on the first side, which is determined by the gap length of the first side device hole and the gap width of the first side inner lead, and the second side device hole. And the sum of the areas of the sealing resin outflow contributing region on the second side, which is determined by the gap width of the inner lead of the second side.

In the tape carrier package (TCP) semiconductor device having these configurations, the area of one sealing resin outflow contributing region on the first side of the semiconductor substrate, which is determined by the gap length of the device hole and the gap width of the inner lead. And the corresponding sum of the areas of the sealing resin outflow contributing regions on the second side of the semiconductor substrate corresponding thereto, or the sum of the areas of the sealing resin outflow contributing regions on the first side of the semiconductor substrate. It is effective to make the area sum of the sealing resin outflow contribution regions on the second side of the semiconductor substrate substantially equal per unit length.

Furthermore, the gap width of the inner leads on the first side extending from the first side of the device hole for mounting the semiconductor substrate to the first side of the semiconductor substrate to be mounted corresponds to the first side. A tape carrier package (TC) formed to be larger than the gap width of the second side inner lead extending from the second side of the hole to the second side of the semiconductor substrate.
P) In the carrier tape for a semiconductor device, the length of the inner leads on the first side is made shorter than the length of the inner leads on the second side.

The tape carrier package (TC
P) In the carrier tape for a semiconductor device, the first side determined by the first side of the device hole and the first side of the semiconductor substrate.
The sum of the areas of the sealing resin outflow contributing region on the first side, which is determined by the gap length of the side device hole and the gap width of the first side inner lead, and the second side of the device hole and the second side of the semiconductor substrate. The gap length of the second side device hole determined by the above and the sum of the areas of the sealing resin outflow contributing regions on the second side determined by the gap width of the second side inner leads are made substantially equal.

In the tape carrier package (TCP) semiconductor device carrier tape having this structure, one sealing resin outflow contributing region on the first side of the semiconductor substrate, which is determined by the gap length of the device hole and the gap width of the inner lead. And the corresponding sum of the areas of the sealing resin outflow contributing regions on the second side of the semiconductor substrate, or the area of the sealing resin outflow contributing regions on the first side of the semiconductor substrate. It is effective that the sum and the sum of the areas of the sealing resin outflow contributing regions on the second side of the semiconductor substrate are substantially equal per unit length.

[0022]

When the resin flows from the front surface side of the semiconductor substrate to the side surface side of the semiconductor substrate, the main factor affecting the outflow amount is the gap area defined by the device hole edge, the inner lead and the chip edge. Conceivable.

According to the present invention, the resin supply surface (semiconductor) is formed on the first side of the device hole in which the electrodes are sparsely arranged on the semiconductor substrate and on the second side of the device hole in which the electrodes are densely arranged. By adjusting the gap area so that the resin supply amount from the front surface side to the side surface side of the substrate becomes uniform, the resin amount flowing out from the device hole to the back surface of the tape carrier can be made uniform. Moreover, since the flow of the sealing resin becomes uniform, the thickness of the resin on the surface of the semiconductor substrate can be made substantially uniform.

[0024]

DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a diagram for explaining a TCP semiconductor device of the present invention, FIG. 1a is a sectional view showing a state after resin sealing, and FIG. 1b is a plan view showing a state before resin sealing. is there. 1a is a sectional view taken along line AA of FIG. 1b.

In the figure, the semiconductor substrate 2 is mounted inside the device hole 5 formed in the tape carrier 4.

In such a semiconductor device, resin encapsulation is usually performed by dropping or applying a softened encapsulating resin (for example, epoxy resin, silicone resin, polyimide resin, etc.) on the surface side of the semiconductor substrate 2 and flowing the resin. Supplying the sealing resin from the front surface side of the semiconductor substrate 2 to the device hole 5 on the side surface of the semiconductor substrate 2 through the resin outflow contribution region determined by the device hole gap length and the lead gap width by utilizing the property and viscosity. Thus, the surface of the semiconductor substrate 2 and the entire device hole 5 are filled with resin.

The sealing resin 1 serves as a surface protective film for protecting the surface of the semiconductor substrate 2, and the other sealing resins 11 and 12 are provided.
Fills the device hole 5 to prevent adverse effects from the back and side surfaces of the semiconductor substrate 2 and maintain mechanical strength.

The first side inner lead 31 extending from the first side 51 of the device hole 5 toward the semiconductor substrate 2 has a coarse lead gap width (W) (W = W1),
The second side inner lead 32 extending toward the semiconductor substrate 2 from the second side 52 opposite to the first side 51 of the device hole 5 has a dense lead gap width (W) (W = W2).
ing. For simplicity, the inner lead 3 on the first side
The first and second side inner leads 32 are arranged uniformly, but the arrangement is not necessarily limited to this.

The center 6 of the semiconductor substrate 2 is connected to the device hole 5
The length of the first side inner lead 31 is formed to be shorter than the length of the second side inner lead 32 so that the first side 51 of the device hole 5 can be displaced from the center 7 and mounted. As a result, the device hole gap length (L) formed when the semiconductor substrate 2 is mounted becomes shorter on the first side 51 side of the device hole 5 (L = L1: first side device hole gap length). On the other hand, on the second side 52 side of the device hole 5, it becomes longer (L = L2: second side device hole gap length).

Here, the area sum S of the resin outflow contributing regions on each side of the device hole is the lead gap width W, the device hole gap length L, and the number of gaps between the leads N, as in the prior art. For example, S = W × L × N. For the sake of simplicity, the part where each side intersects will be excluded. In this embodiment, the resin outflow contributing areas are made equal on opposite sides of the device hole.

On the first side 51 side of the device hole 5, the first side device hole gap length L1 is 0.2 mm,
The lead gap width W1 of the inner lead 31 on the first side is set to 3.
If the distance is 0 mm, the number of spaces N1 between the leads is 5, so that the area sum S1 of the resin outflow contributing regions on the first side is S
1 = L1 × W1 × N1 = 0.2 × 3.0 × 5 = 3.0 m
It becomes m ² .

On the second side 52 side of the device hole 5, the lead gap width W2 of the second side inner lead 32 is 0.5 mm, and the number N2 of intervals between the leads is 11,
The second side device hole gap length L2 is equal to the area sum S2 of the resin outflow contribution regions on the second side and the area sum S1 of the resin outflow contribution regions on the first side, and thus L2 = S2 /
(W2 × N2) = S1 / (W2 × N2) = 3.0 /
(0.5 × 11) = 0.55 mm.

As described above, by equalizing the area sum of the resin outflow contribution regions on the first side and the second side of the device hole, the flow of the sealing resin can be made substantially equal, and therefore the surface of the semiconductor substrate 2 can be obtained. The thickness of the sealing resin 1 can be made substantially uniform over the entire surface sealing portion, and the sealing resin can be evenly filled in the device holes on the side surface of the semiconductor substrate. Therefore, the nonuniform sealing shape as in the prior art does not occur.

In this embodiment, the ratio of the sum of areas of the resin outflow contribution region is set to 1.0, but it is not always necessary to exactly match the above, and for example, S2 / S1 = 0.7 to 1.
Even if it is set to about 3, similar effects can be obtained as compared with the conventional case. This is because the encapsulating resin is in a liquid state at the time of dropping and applying, and has a certain fluidity and viscosity, so that a predetermined amount of resin is supplied from the front surface side of the semiconductor substrate to the side surface side of the semiconductor substrate. It is considered that the sealing resin spreads sufficiently along the holes and the device holes can be sufficiently filled.

FIG. 3 shows the gap width W1 of the inner leads 35 on the first side which are unevenly connected to the first side of the semiconductor substrate 2 mounted inside the device hole 5 of the carrier tape.
a and W1b are the second side of the semiconductor substrate 2 corresponding to the first side.
Second side inner lead 36 that is unevenly connected to the side
2 shows a TCP semiconductor device formed to have a larger gap width W2a, W2b. 4 × S1,3 which is the sum of the areas S1 and S2 of the sealing resin outflow contributing regions at arbitrary locations on the first side of the semiconductor substrate, which are determined by the gap length L1 of the device hole and the gap widths W1a and W1b of the inner leads. × S2, gap length L2 of device hole and gap width W2 of inner lead
a and W2b are equal to the sum of the areas S3 and S4 of the sealing resin outflow contribution regions 6xS3 and 5xS4 on the second side corresponding to the first side of the semiconductor substrate. I am trying to become. That is, the area sum of the sealing resin outflow contributing regions on the first side of the semiconductor substrate and the area sum of the encapsulating resin outflow contributing regions on the second side of the semiconductor substrate are equalized per unit length. ing.

FIG. 4 is a diagram for further explaining the relationship between the arrangement of the inner leads and the resin outflow contributing region (area) in the present invention.

The case where the area S1 of one resin outflow contribution region on the first side and the corresponding area 4 × S2 of four resin outflow contribution regions on the second side are shown. In these cases as well, since the degree of resin outflow can be made uniform on the opposite sides of the semiconductor substrate 2 on the first side and the second side, the sealing resin is evenly filled on the semiconductor substrate surface and the device holes. can do.

The resin used has a viscosity of 10 poise or more and is effective for non-Newtonian fluids. Although the curing temperature varies depending on the resin, it is higher than the lower temperature (for example, 80 ° C.) (for example, 150 to 200).
It was more effective to carry out the treatment at a high temperature (° C) for a short time (several minutes to 10 minutes).

[0039]

(1) The amount of resin that protects a semiconductor element can be applied uniformly in each direction of the semiconductor element, and as a result, a local pattern is exposed or some sides are extremely thick. I was able to eradicate the poor appearance.

(2) Since the resin flows evenly, a uniform resin thickness can be formed, and the crack resistance and the moisture resistance can be improved.

(3) A uniform resin amount can be applied to each side, and it is not necessary to adjust the application pressure or optimize the drawing speed, and the working time can be shortened.

(4) It is possible to eliminate a defective sealing due to an unnecessary exposure of the conductor pattern due to the nonuniform flow of the sealing resin and an excessive uneven flow of the resin.

(5) The amount of resin that protects the semiconductor element is equalized, and as a result, moisture resistance and thermal stress are equalized.

(6) The number of appearance inspection items can be reduced, and the number of processing steps can be reduced.

[Brief description of drawings]

FIG. 1a is a cross-sectional view of a tape carrier package according to the present invention.

1b is a plan view of the tape carrier package of FIG. 1a.

FIG. 2a is a cross-sectional view of a conventional tape carrier package.

2b is a plan view of the tape carrier package of FIG. 2a.

FIG. 3 is a plan view of another tape carrier package according to the present invention.

FIG. 4 is a diagram illustrating a relationship between an arrangement of inner leads and a resin outflow contributing region (area) in the present invention.

[Explanation of symbols]

1, 11, 12, 13, 14 Sealing resin 2 Semiconductor element 3, 31, 32, 33, 34, 35, 36 Conductor pattern and inner lead 4 Tape carrier 5, 51, 52, 53, 54 Provided in the tape carrier Device hole 6 Center line of semiconductor element 7 Center line of device hole provided in tape carrier L Device hole size (gap length) S Gap area W Inner lead gap width

Claims (10)

[Claims] 1. A second side of a semiconductor substrate, wherein a gap width of a first side inner lead connected to a first side of a semiconductor substrate mounted inside a device hole of a carrier tape corresponds to the first side. In a tape carrier package (TCP) semiconductor device formed to be larger than the gap width of the second side inner lead connected to the side, the first side of the semiconductor substrate and the first side of the device hole corresponding to the first side are determined. The gap length of the device hole on the one side is the second of the semiconductor substrate.
A TCP semiconductor device characterized in that it is formed to be smaller than the gap length of the second side device hole defined by the side and the second side of the device hole corresponding thereto. 2. The second side of the semiconductor substrate, wherein the gap width of the first side inner lead connected to the first side of the semiconductor substrate mounted inside the device hole of the carrier tape corresponds to the first side. In a tape carrier package (TCP) semiconductor device formed to have a larger width than the gap between the inner leads connected to the second side, the center defined by the first side of the semiconductor substrate and the second side of the semiconductor substrate is the device hole. The TCP is characterized in that the first side gap length and the second side gap length are different from each other by being formed so as to be shifted to the first side from the center defined by the first side and the second side.
Semiconductor device. 3. The second side of the semiconductor substrate, in which the gap width of the first side inner leads connected to the first side of the semiconductor substrate mounted inside the device hole of the carrier tape corresponds to the first side. In a tape carrier package (TCP) semiconductor device formed to be larger than the gap width of the second side inner lead connected to the side, depending on the gap length of the first side device hole and the gap width of the first side inner lead. The sealing resin outflow contribution region on the second side, which is determined by the sum of the areas of the sealing resin outflow contribution region on the first side, which is determined, and the gap length of the device holes on the second side and the gap width of the inner leads on the second side. The TCP semiconductor device is characterized in that the sum of the areas is substantially equal. 4. The area of one sealing resin outflow contributing region on the first side of the semiconductor substrate, which is determined by the gap length of the device hole and the gap width of the inner lead, and the corresponding second side of the semiconductor substrate. 4. The TCP semiconductor device according to claim 1, 2 or 3, wherein the sum of areas of the sealing resin outflow contribution region of 1) is substantially equal. 5. The sum of areas of the sealing resin outflow contributing regions on the first side of the semiconductor substrate and the sum of areas of the sealing resin outflow contributing regions on the second side of the semiconductor substrate are substantially equal per unit length. 4. The TCP semiconductor device according to claim 1, 2, or 3. 6. A device in which a gap width of a first side inner lead extending from a first side of a device hole for mounting a semiconductor substrate to a first side of a semiconductor substrate to be mounted corresponds to the first side. From the second side of the hole to the second side of the semiconductor substrate
In a carrier tape for a tape carrier package (TCP) semiconductor device formed to be larger than the gap width of the second side inner lead extending to the side, the length of the first side inner lead is larger than that of the second side inner lead. Carrier tape for TCP semiconductor device characterized by being short. 7. A device in which a gap width of a first side inner lead extending from a first side of a device hole for mounting a semiconductor substrate to a first side of a semiconductor substrate to be mounted corresponds to the first side. From the second side of the hole to the second side of the semiconductor substrate
In a carrier tape for a tape carrier package (TCP) semiconductor device, which is formed to be larger than a gap width of a second side inner lead extending to a side, a first side defined by a first side of a device hole and a first side of a semiconductor substrate. The sum of the areas of the sealing resin outflow contribution region on the first side, which is determined by the gap length of the side device hole and the gap width of the inner lead on the first side, and the second side of the device hole and the second side of the semiconductor substrate. The gap length of the device hole on the second side, which is determined,
A carrier tape for a TCP semiconductor device, wherein the sum of areas of the sealing resin outflow contribution region on the second side, which is determined by the gap width of the side inner leads, is substantially equal. 8. The area of one sealing resin outflow contributing region on the first side of the semiconductor substrate, which is determined by the gap length of the device hole and the gap width of the inner lead, and the corresponding second side of the semiconductor substrate. 8. The carrier tape for a TCP semiconductor device according to claim 7, wherein the sum of the areas of the sealing resin outflow contribution region of 1) is substantially equal. 9. The sum of areas of the sealing resin outflow contributing regions on the first side of the semiconductor substrate and the sum of areas of the sealing resin outflow contributing regions on the second side of the semiconductor substrate are substantially equal per unit length. 8. The carrier tape for TCP semiconductor device according to claim 7, wherein 10. The first carrier tape device hole
The sum of the areas of the sealing resin outflow contributing regions on the first side to be formed between the side and the first side of the semiconductor substrate, the second side of the device hole facing the first side, and the second side of the semiconductor substrate. The first side inner lead and the second side inner lead are arranged inside the device hole so that the sum of areas of the second side sealing resin outflow contributing region to be formed between the side and the side becomes substantially equal. Forming step, connecting the electrodes on the first surface of the semiconductor substrate to the tip portions of the first side inner leads and the second side inner leads, and forming the sealing resin outflow contributing regions on the first side and the second side. Through,
A method of manufacturing a TCP type semiconductor device, comprising the step of supplying a sealing resin to the side surface of the carrier tape from the first surface side of the carrier tape to seal the semiconductor substrate with the resin.