JP2916062B2 - TCP semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device (hereinafter, TCP semiconductor device) using a tape carrier package which is one of package forms of a semiconductor element, a carrier tape for the TCP semiconductor device, and a method of manufacturing the TCP semiconductor device. .

[0002]

2. Description of the Related Art FIG. 2 is a view for explaining a conventional TCP semiconductor device. FIG. 2A is a sectional view showing a state after resin sealing, and FIG. 2B is a plan view showing a state before resin sealing. is there.
FIG. 2A is a cross-sectional view taken along line BB of FIG. 2B.

[0003] As can be seen from the figures, in recent TCP semiconductor devices, the function of the semiconductor substrate to be mounted is becoming complicated, and the number of arranged electrodes is often extremely different on opposite sides. That is, the electrodes on each side in the semiconductor substrate were relatively evenly arranged before,
In recent years, extremely uneven arrangements have been increasing. In addition, the width of the gap between the inner leads has been narrowed by increasing the number of electrodes.

In this conventional semiconductor device, a semiconductor substrate is mounted inside a device hole 5 formed in a tape carrier 4. Conductive pattern 3 connected to electrodes formed on semiconductor substrate 2 mounted on tape carrier 4
Irrespective of the number, the center 7 of the device hole 5 provided in the tape carrier 4 and the center 6 of the semiconductor substrate 2 are matched.

In such a semiconductor device, resin sealing is usually performed by dropping or applying a softened sealing resin (for example, epoxy resin, silicone resin, polyimide resin, etc.) on the surface side of the semiconductor substrate 2, From the surface side of the semiconductor substrate 2 utilizing the properties and viscosity, the device hole gap length (indicated by the symbol L in the figure) and the lead gap width (the symbol W in the figure)
1 and W2), the sealing resin is supplied to the device holes 5 on the side surfaces of the semiconductor substrate 2 through the resin outflow contributing region determined by the formula (1), thereby filling the resin on the surface of the semiconductor substrate 2 and the entire device holes 5. Do it.

The sealing resin 1 serves as a surface protection film for protecting the surface of the semiconductor substrate, and the other sealing resins 13 and 14 fill the device holes 5 and prevent adverse effects from the back and side surfaces of the semiconductor substrate 2. And maintain the mechanical strength.

The first side inner lead 33 extending from the first side 53 of the device hole 5 toward the semiconductor substrate 2 has a coarse lead gap width (W) (W = W1).
The second side inner lead 34 extending from the second side 54 facing the first side 53 of the device hole 5 toward the semiconductor substrate 2 has a dense lead gap width (W) (W = W2).
ing. For simplicity, the first side inner lead 3
3. The second side inner leads 34 are arranged in a uniform arrangement.

Here, the area sum S of the resin outflow contributing regions on each side of the device hole will be examined.

Assuming that the lead gap width is W, the device hole gap length is L, and the number of intervals between leads is N, the area sum S of the resin outflow contributing region is represented by S = W × L × N. For the sake of simplicity, the intersection of each side is excluded.

On the first side 53 side of the device hole 5, the first side device hole gap length L is 0.2 mm,
The side inner lead 33 has a lead gap width W1 of 3.0 m.
m, the number of intervals N1 between leads is 5, so that the area sum S1 of the resin outflow contributing region on the first side is S1
= L1 × W1 × N1 = 0.2 × 3.0 × 5 = 3.0 mm
It becomes ² . On the second side 54 side of the device hole 5,
The second side device hole gap length L2 is 0.2 mm,
The lead gap width W2 of the side inner lead 34 is 0.5 m.
m, the number of intervals N2 between leads is 11,
The area sum S2 of the resin outflow contributing regions on the side is S2 = L2 ×
W2 × N2 = 0.2 × 0.5 × 11 = 1.1 mm ² .

That is, the ratio of the sum of the areas of the resin outflow contributing regions, S
2 / S1 is 1.1 / 3.0 = 0.367.

As described above, since the ratio of the sum of the areas of the resin outflow contributing regions is deviated, in the resin sealing step of producing the TCP semiconductor device, the device holes on the semiconductor substrate 2 in which the arrangement of the electrodes formed on the semiconductor substrate 2 becomes sparse are reduced. 5, the first side 53 side,
The difference in the amount of resin supply from the resin supply surface (the surface of the semiconductor substrate 2) to the side surface of the semiconductor substrate 2 is remarkable between the device hole 5 and the second side 54 of the device hole 5 where the electrodes are densely arranged. It is difficult to make the flow of the sealing resin from the substrate to the side surface of the semiconductor substrate 2 uniform and to make the thickness of the resin 1 on the applied side uniform and flat, so that the , And stable production was not possible.

That is, due to the uneven flow of the resin,
A portion 13 that is too thin and wide is formed, and a portion 14 having a gap is formed because the sealing resin is not sufficiently supplied.
The sealing shape becomes unbalanced on the left and right, and sufficient mechanical strength cannot be ensured, causing cracks due to mechanical stress.

[0014]

SUMMARY OF THE INVENTION The present invention is intended to reduce the uneven flow of the sealing resin supplied from the surface of the semiconductor substrate to the device holes on the side surfaces of the semiconductor substrate, which is a problem in the conventional TCP semiconductor device described above. This makes it possible to make the thickness of the sealing resin on the surface of the semiconductor substrate uniform, and to evenly fill the device holes on the side surfaces of the semiconductor substrate with the sealing resin. An object of the present invention is to provide a TCP semiconductor device having a resin stopper shape, a carrier tape for the TCP semiconductor device, and a method for manufacturing the TCP semiconductor device.

[0015]

According to the first aspect of the present invention, there is provided:
The tape carrier package semiconductor device is mounted
The conductor board is rectangular, and each side of the device hole is
At least, in the region facing each side of the semiconductor substrate,
The device is parallel to each side of the semiconductor substrate facing the
Contacting the first side of the semiconductor substrate mounted inside the chair hole
The gap width of the first side inner lead continued on the first side
Side connected to the second side of the semiconductor substrate corresponding to
Tape key formed larger than the inner lead gap width
Carrier package semiconductor device.
By one side and the first side of the corresponding device hole
The gap length of the first side device hole is determined by the semiconductor substrate.
On the second side of the device hole and the second side of the corresponding device hole
Smaller than the gap length of the second side device hole determined by
It is characterized by being formed.

Further , the tape carrier of the present invention according to claim 2 is provided.
In the rear package semiconductor device, the semiconductor substrate to be mounted is
It is rectangular and each side of the device hole is at least half
In a region facing each side of the conductive substrate, the semiconductor substrate
Parallel to each side of the plate facing the
On the first side of the semiconductor substrate mounted inside the vise hole
The gap width of the first side inner lead to be connected is the first side
Side connected to the second side of the semiconductor substrate corresponding to the side
Tape formed larger than gap width of side inner lead
In a carrier package semiconductor device,
The center defined by the first side and the second side of the semiconductor substrate is
The center defined by the first and second sides of the vise hole
The first side is formed by being shifted to the first side.
Characterized in that the side gap length and the second side gap length are different.
Is what you do.

Further , the tape carrier of the present invention according to claim 3 is provided.
The rear package semiconductor device has a first side device hole.
Is determined by the gap length of the inner lead and the gap width of the first side inner lead.
The sum of the area of the sealing resin outflow contributing region on the first side,
Gap length of side device hole and second side inner lead
Resin outflow contribution area on the second side determined by the gap width
2. The method according to claim 1, wherein the sum of the areas is substantially equal.
Or the tape carrier package semiconductor according to claim 2.
Device. Further, the tape carrier of the present invention according to claim 4 is provided.
For rear package semiconductor devices, the gap length of device holes
Of the semiconductor substrate determined by the gap width between
The sum of the area of one sealing resin outflow contributing region on the first side,
Of the sealing resin on the second side of the semiconductor substrate
The area sum of areas is substantially equal to the area,
The tape carrier package according to any one of claims 1 to 3.
Semiconductor device. Further, according to the present invention described in claim 5,
Tape carrier package semiconductor device
The sum of the area of the sealing resin outflow contributing region on the first side and the semiconductor substrate
Unit is the sum of the area of the sealing resin outflow contributing area on the second side of the plate
2. The method according to claim 1, wherein the lengths are substantially equal.
The tape carrier package according to any one of claims 3 to 4.
A semiconductor device.

Further, the tape carrier of the present invention according to claim 6 is provided.
Carrier tape for rear package semiconductor device
Semiconductor substrate is rectangular, and each side of the device hole
Is at least in a region facing each side of the semiconductor substrate.
Is parallel to each side of the semiconductor substrate,
The first of the device holes for mounting the semiconductor substrate
The first extending from the side to the first side of the semiconductor substrate to be mounted
The gap width of the inner lead on one side is
Extending from the second side of the vise hole to the second side of the semiconductor substrate
Formed larger than the gap width of the second side inner lead.
Tape carrier package carrier table for semiconductor device
The length of the inner lead on the first side is
It is characterized by being shorter than the length of the inner lead
is there.

Further, the tape carrier of the present invention according to claim 7 is provided.
Carrier tapes for rear package semiconductor devices
Determined by the first side of the hole and the first side of the semiconductor substrate
Sum of area of sealing resin outflow contributing region on first side and device
The second side defined by the second side of the hole and the second side of the semiconductor substrate
The gap length of the device hole on the second side and the inner length on the second side
Outflow of the sealing resin on the second side determined by the gap width
Characterized in that the sum of the areas of the
7. The tape carrier package according to claim 6, for a semiconductor device.
It is a carrier tape.

Further, the tape carrier of the present invention according to claim 8 is provided.
Carrier tapes for rear package semiconductor devices
Determined by the gap length of the hole and the gap width of the inner lead
One sealing resin outflow contributing area on the first side of the semiconductor substrate
Area and the corresponding sealing on the second side of the semiconductor substrate.
The characteristic is that the area sum of the resin outflow contributing area is almost equal
The tape carrier according to claim 6 or 7, wherein
It is a carrier tape for package semiconductor devices. Also,
10. The tape carrier package semiconductor of the present invention according to claim 9.
The carrier tape for the body device is sealed on the first side of the semiconductor substrate.
The sum of the area of the resin outflow contributing region and the second side of the semiconductor substrate
And the sum of the area of the sealing resin outflow contributing area per unit length
9. The method according to claim 6, wherein
Carrier for semiconductor device as described in the tape carrier package
It is a tape.

The tape carrier according to claim 10, further comprising :
The method of manufacturing a package semiconductor device includes the steps of:
The substrate is rectangular and each side of the device hole is at least
In a region facing each side of the semiconductor substrate,
It is parallel to each side of the printed circuit board facing the
Of the semiconductor substrate mounted inside the device hole of the
The gap width of the first side inner lead connected to the side is
Connected to the second side of the semiconductor substrate corresponding to the first side
It was formed larger than the gap width of the second side inner lead.
Tape carrier package semiconductor device manufacturing method
The first side of the device hole of the carrier tape and the semiconductor
A first side sealing tree to be formed between the first side of the substrate and the first side
Total area of fat outflow contributing area and device facing the first side
Formed between the second side of the hole and the second side of the semiconductor substrate;
The sum of the areas of the sealing resin outflow contributing regions on the second side to be
The first side by the inside of the device hole to be equal
Side inner lead and the second side inner lead are formed.
And a first side inner lead and a second side inner lead.
Connect the electrode on the first surface of the semiconductor substrate to the tip of the lead
Process and the sealing resin outflow contributing regions on the first side and the second side.
Through the carrier tape from the first surface side of the carrier tape.
Supply sealing resin to the side of the loop and resin seal the semiconductor substrate
And a step of performing the above.

[0022]

When the resin flows from the front surface of the semiconductor substrate to the side surface of the semiconductor substrate, the main factor affecting the outflow is a gap area defined by a device hole edge, an inner lead, and a chip edge. Conceivable.

According to the present invention, the resin supply surface (semiconductor substrate) is formed on the first side of the device hole where the arrangement of electrodes formed on the semiconductor substrate is sparse, and on the second side of the device hole where the arrangement of electrodes is dense. By adjusting the gap area so that the amount of resin supplied from the (front surface) side to the side surface of the substrate is uniform, the amount of resin flowing out from the device holes to the back surface of the tape carrier can be made uniform. Further, since the flow of the sealing resin becomes uniform, the thickness of the resin on the surface of the semiconductor substrate can be made substantially uniform.

[0024]

1 is a view for explaining a TCP semiconductor device of the present invention, FIG. 1a is a sectional view showing a state after resin sealing, and FIG. 1b is a plan view showing a state before resin sealing. is there. FIG. 1A is a cross-sectional view taken along line AA of FIG. 1B.

In the figure, a semiconductor substrate 2 is mounted inside a device hole 5 formed in a tape carrier 4.

In such a semiconductor device, resin encapsulation is usually performed by dropping or applying a softened encapsulating resin (for example, epoxy resin, silicone resin, polyimide resin, or the like) on the surface side of the semiconductor substrate 2. Supplying the sealing resin from the surface side of the semiconductor substrate 2 to the device holes 5 on the side surfaces of the semiconductor substrate 2 through the resin outflow contributing region determined by the device hole gap length and the lead gap width by utilizing the property and viscosity. Is performed by filling the surface of the semiconductor substrate 2 and the entire device hole 5 with resin.

The sealing resin 1 serves as a surface protection film for protecting the surface of the semiconductor substrate 2, and the other sealing resins 11, 12
Fills the device holes 5 to prevent adverse effects from the back and side surfaces of the semiconductor substrate 2 and maintain mechanical strength.

The first side inner lead 31 extending from the first side 51 of the device hole 5 toward the semiconductor substrate 2 has a coarse lead gap width (W) (W = W1).
The second side inner lead 32 extending from the second side 52 facing the first side 51 of the device hole 5 toward the semiconductor substrate 2 has a dense lead gap width (W) (W = W2).
ing. For simplicity, the first side inner lead 3
The first and second side inner leads 32 are arranged in a uniform arrangement, but are not necessarily limited thereto.

The center 6 of the semiconductor substrate 2 is aligned with the device hole 5
The length of the first-side inner lead 31 is shorter than the length of the second-side inner lead 32 so that the device hole 5 can be shifted toward the first side 51 from the center 7 of the device hole 5. Accordingly, the device hole gap length (L) formed when the semiconductor substrate 2 is mounted is shorter on the first side 51 side of the device hole 5 (L = L1: first side device hole gap length). On the other hand, on the second side 52 side of the device hole 5, the length becomes longer (L = L2: device hole gap length on the second side).

Here, the sum S of the area of the resin outflow contributing region on each side of the device hole is W, the gap length of the lead is L, the gap length of the device hole is N, and the number of intervals between the leads is N, as in the prior art. For example, S = W × L × N. For the sake of simplicity, the intersection of each side is excluded. In this embodiment, the resin outflow contributing area is made equal on opposite sides of the device hole.

On the first side 51 side of the device hole 5, the first side device hole gap length L1 is 0.2 mm,
2. The lead gap width W1 of the first side inner lead 31 is set to 3.
If it is 0 mm, the number of intervals N1 between the leads is 5, so that the area sum S1 of the resin outflow contributing region on the first side is S
1 = L1 × W1 × N1 = 0.2 × 3.0 × 5 = 3.0m
m ² .

On the second side 52 side of the device hole 5, the lead gap width W2 of the second side inner lead 32 is 0.5 mm, and the number of intervals N2 between leads is 11;
The device hole gap length L2 on the second side is equal to the area sum S1 of the resin outflow contributing region on the second side equal to the area sum S1 of the resin outflow contributing region on the second side.
(W2 × N2) = S1 / (W2 × N2) = 3.0 /
(0.5 × 11) = 0.55 mm.

As described above, by making the sum of the areas of the resin outflow contributing regions on the first side and the second side of the device hole equal, the flow of the sealing resin can be made substantially uniform. The thickness of the sealing resin 1 can be made substantially uniform over the entire surface sealing portion, and the filling of the sealing resin into the device holes on the side surfaces of the semiconductor substrate can be made uniform. Therefore, non-uniformity of the sealing shape as in the prior art is eliminated.

In this embodiment, the ratio of the sum of the areas of the resin outflow contributing regions is set to 1.0. However, it is not always necessary to make them strictly coincide with each other, for example, S2 / S1 = 0.7-1.
Even if it is about 3, the same effect can be obtained as compared with the conventional case. This is because the sealing resin is in a liquid state at the time of dropping and coating, and has a certain fluidity and viscosity, so that only a predetermined amount of resin is supplied from the surface side of the semiconductor substrate to the side surface of the semiconductor substrate. It is considered that the sealing resin spreads sufficiently along the holes and the device holes can be sufficiently filled.

FIG. 3 shows a gap width W1 of the first side inner lead 35 unequally connected to the first side of the semiconductor substrate 2 mounted inside the device hole 5 of the carrier tape.
a, W1b is the second of the semiconductor substrate 2 corresponding to the first side.
Second side inner lead 36 unequally connected to the side
Shows a TCP semiconductor device formed larger than the gap widths W2a and W2b. 4 × S1,3 = 4 × S1,3 of the sum of the areas S1 and S2 of the sealing resin outflow contributing regions at an arbitrary position on the first side of the semiconductor substrate determined by the gap length L1 of the device hole and the gap widths W1a and W1b of the inner leads. × S2, the gap length L2 of the device hole, and the gap width W2 of the inner lead.
a and W2b, the sum of the areas S3 and S4 of the sealing resin outflow contributing region at an arbitrary point on the second side corresponding to the first side of the semiconductor substrate, which is equal to 6 × S3 and 5 × S4, is equal. I am trying to become. That is, the sum of the areas of the sealing resin outflow contributing regions on the first side of the semiconductor substrate and the sum of the areas of the sealing resin outflow contributing regions on the second side of the semiconductor substrate are set to be uniform and arbitrary per unit length. ing.

FIG. 4 is a diagram for further explaining the relationship between the arrangement of inner leads and the resin outflow contributing region (area) in the present invention.

The case where the area S1 of one resin outflow contributing region on the first side is equal to the area 4 × S2 of the corresponding four resin outflow contributing regions on the second side is shown. Also in these cases, the degree of resin outflow on the opposite side of the semiconductor substrate 2 can be made uniform between the first side and the second side, so that the sealing resin is uniformly filled in the semiconductor substrate surface and the device holes. can do.

The resin used has a viscosity of 10 poise or more, and is effective with non-Newtonian fluids. Although the curing temperature varies depending on the resin, a higher temperature (for example, 150 to 200) is lower than a lower temperature (for example, 80 ° C.).
C.) for a short time (several minutes to 10 minutes).

[0039]

(1) The amount of the resin for protecting the semiconductor element can be uniformly applied in each direction of the semiconductor element, and as a result, the local pattern is exposed and some sides become extremely thick. Eradication of poor appearance was achieved.

(2) Since the resin flows evenly, a uniform resin thickness can be formed, and crack resistance and moisture resistance can be improved.

(3) A uniform amount of resin can be applied to each side, and there is no need to adjust the application pressure and optimize the drawing speed, thereby shortening the working time.

(4) Unnecessary exposure of the conductor pattern due to uneven flow of the sealing resin and eradication of the sealing failure due to excessive uneven flow of the resin can be achieved.

(5) The amount of the resin for protecting the semiconductor element becomes uniform, and as a result, the moisture resistance and the thermal stress become uniform.

(6) The items of the appearance inspection can be reduced, and the number of processing steps can be reduced.

[Brief description of the drawings]

FIG. 1a is a cross-sectional view of a tape carrier package according to the present invention.

FIG. 1b is a plan view of the tape carrier package of FIG. 1a.

FIG. 2a is a cross-sectional view of a conventional tape carrier package.

FIG. 2b is a plan view of the tape carrier package of FIG. 2a.

FIG. 3 is a plan view of another tape carrier package according to the present invention.

FIG. 4 is a diagram illustrating the relationship between the arrangement of inner leads and a resin outflow contributing region (area) according to the present invention.

[Explanation of symbols]

1, 11, 12, 13, 14 Sealing resin 2 Semiconductor element 3, 31, 32, 33, 34, 35, 36 Conductor pattern and inner lead 4 Tape carrier 5, 51, 52, 53, 54 Provided in tape carrier Device hole 6 Center line of semiconductor element 7 Center line of device hole provided in tape carrier L Device hole size (gap length) S Gap area W Inner lead gap width

Claims (10)

(57) [Claims] 1. A semiconductor substrate to be mounted is rectangular, and
Each side of the vise hole is at least each side of the semiconductor substrate
In the region opposed to the semiconductor substrate
It is parallel to each side and installed inside the above device hole
First side inner connected to the first side of the semiconductor substrate
The width of the gap between the leads is equal to the width of the semiconductor substrate corresponding to the first side.
By the gap width of the second side inner lead connected to the two sides
Tape carrier package semiconductor device
In location, the first side of the semiconductor substrate and the device holes corresponding thereto
Gap length of the first side device hole determined by the first side
Is the device side corresponding to the second side of the semiconductor substrate.
Between the device holes on the second side defined by the second side of the
Tape key characterized by being formed smaller than the gap length
Carrier package semiconductor device. 2. The semiconductor substrate to be mounted has a rectangular shape.
Each side of the vise hole is at least each side of the semiconductor substrate
In the region opposed to the semiconductor substrate
Parallel to each side, inside the device hole of the carrier tape
Connected to the first side of the semiconductor substrate mounted on the first side
The gap width of the side inner lead is half the gap width corresponding to the first side.
The second side innerly connected to the second side of the conductive substrate
Tape carrier package formed larger than the gap width
In a semiconductor device, the first side of the semiconductor substrate and the second side of the semiconductor substrate are defined.
Center is defined by the first and second sides of the device hole.
It is formed so as to be shifted toward the first side from the center of the circle.
The gap length of the first side is different from the gap length of the second side.
And a tape carrier package semiconductor device. 3. The gap length of the first side device hole and the first
Of the first side determined by the gap width of the side inner lead
The sum of the area of the sealing resin outflow contributing region and the second side device
The gap length of the inner lead and the gap width of the second side inner lead.
The sum of the area of the sealing resin outflow contributing area on the second side determined
3. The method according to claim 1 or claim 2, wherein
The tape carrier package semiconductor device according to the above. 4. The gap length of a device hole and inner liability.
On the first side of the semiconductor substrate determined by the gap width of the semiconductor substrate
And the corresponding half of the
The sum of the area of the sealing resin outflow contributing region on the second side of the conductive substrate and
Are substantially equal to each other.
Tape carrier package semiconductor instrumentation according to any of
Place. 5. An outflow of a sealing resin on a first side of a semiconductor substrate.
The sum of the area of the applied region and the sealing resin flow on the second side of the semiconductor substrate
That the area sum of
The method according to any one of claims 1 to 3, wherein
Onboard tape carrier package semiconductor device. 6. A semiconductor substrate to be mounted is rectangular, and has a rectangular shape.
Each side of the vise hole is at least each side of the semiconductor substrate
In the region opposed to the semiconductor substrate
It is parallel to each side and is the data for mounting the semiconductor substrate.
Of the semiconductor substrate to be mounted from the first side of the vise hole
The gap width of the first side inner lead extending to the first side is
The semiconductor substrate starts from the second side of the device hole corresponding to the first side.
Gap width of the second side inner lead extending to the second side of the plate
Larger formed tape carrier package semiconductor
In the device carrier tape, the length of the first side inner lead is equal to the length of the second side inner lead.
Tape carrier pad, which is shorter than
Carrier tape for cage semiconductor devices. 7. A semiconductor device comprising : a first side of a device hole;
A sealing resin outflow contributing region on the first side defined by the first side
Of the device hole, the second side of the device hole and the
The gap length of the second side device hole determined by the two sides
And the gap width of the second side inner lead
The sum of the areas of the sealing resin outflow contributing areas on the two sides is almost equal
7. The tape carrier according to claim 6, wherein:
Carrier tape for package semiconductor devices. 8. The gap length of a device hole and inner liability.
On the first side of the semiconductor substrate determined by the gap width of the semiconductor substrate
Area of the sealing resin outflow contributing area and the corresponding semiconductor
The sum of the areas of the sealing resin outflow contributing regions on the second side of the body substrate is
The method according to claim 6, wherein the two are substantially equal.
Carrier for semiconductor device as described in the tape carrier package
tape. 9. An outflow of a sealing resin on a first side of a semiconductor substrate.
The sum of the area of the applied region and the sealing resin flow on the second side of the semiconductor substrate
The area sum of the output contributing area is approximately equal per unit length
The tape key according to claim 6 or 7, wherein
Carrier tape Carrier tape for semiconductor devices. 10. A semiconductor substrate to be mounted is rectangular.
Each side of the device hole is at least
In a region opposed to the side, the semiconductor substrate is opposed to the semiconductor substrate.
Parallel to each side of the carrier tape
The first side connected to the first side of the semiconductor substrate mounted inside
The gap width of one side inner lead corresponds to the first side
A second side inner connected to the second side of the semiconductor substrate
Tape carrier package formed larger than the gap
In a method of manufacturing a cage semiconductor device, a first side of a device hole of a carrier tape and a semiconductor substrate
Resin flow on the first side to be formed between the first side and the first side
Sum of the area of the output contributing region and the device
Formed between the second side of the semiconductor substrate and the second side of the semiconductor substrate.
The sum of the areas of the sealing resin outflow contributing areas on the second side
To the first side due to the inside of the device hole.
Forming the inner lead and the second side inner lead
And the tip of the first side inner lead and the second side inner lead
Through the step of connecting the electrode on the first surface of the semiconductor substrate to the end portion, and the sealing resin outflow contributing regions on the first side and the second side,
From the first surface side of the carrier tape to the side of the carrier tape
Step of supplying a sealing resin to the surface and sealing the semiconductor substrate with the resin
And a tape carrier package comprising:
A method for manufacturing a semiconductor device.