JPH06250222A - Liquid crystal display device - Google Patents

Liquid crystal display device

Info

Publication number
JPH06250222A
JPH06250222A JP4006193A JP4006193A JPH06250222A JP H06250222 A JPH06250222 A JP H06250222A JP 4006193 A JP4006193 A JP 4006193A JP 4006193 A JP4006193 A JP 4006193A JP H06250222 A JPH06250222 A JP H06250222A
Authority
JP
Japan
Prior art keywords
interlayer insulating
insulating film
liquid crystal
pixel
display device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4006193A
Other languages
Japanese (ja)
Other versions
JP3410754B2 (en
Inventor
Sumisato Shimone
純理 下根
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP4006193A priority Critical patent/JP3410754B2/en
Publication of JPH06250222A publication Critical patent/JPH06250222A/en
Application granted granted Critical
Publication of JP3410754B2 publication Critical patent/JP3410754B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Liquid Crystal (AREA)

Abstract

PURPOSE:To assure the uniformity of a cell gap even if a pixel is provided with a thick interlayer insulating films by forming driver in the outer peripheral part of a sealing part and forming both the first and second interlayer insulating films in an adhering part as well. CONSTITUTION:The active matrix substrate of the liquid crystal display device of the driver 103-contg. active matrix system has the first interlayer insulating film 112 for interlayer sepn. of gate wiring and source wiring and the second interlayer insulating film 104 for interlayer sepn. of source wiring and pixel electrode 106. The driver is formed in the outer peripheral part of the sealing part and both the first and second interlayer insulating films 112, 104 are formed in the sealing part as well. The interlayer insulating film 104 is formed in the sealing part as well in such a manner and, therefore, there are substantially no level differences between the pixel part and the sealing part. Then, there is no need for changing the diameter of the spacer in the sealing part and the spacer in the pixel part and the uniformity of the cell gap is easily controllable.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は液晶表示装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device.

【0002】[0002]

【従来の技術】有機薄膜上に画素電極を形成したことを
特徴とする従来例としては、特公平1−35351号の
ようなものが上げられる。この例では画素電極としてア
ルミニウムを用い、反射型液晶表示装置の構成としてい
る。
2. Description of the Related Art As a conventional example characterized in that a pixel electrode is formed on an organic thin film, Japanese Patent Publication No. 1-35351 can be cited. In this example, aluminum is used as the pixel electrode to form a reflective liquid crystal display device.

【0003】また一般にドライバーをアクティブマトリ
クス基板に内蔵する場合、特開昭64−68725号の
ごとくドライバーは基板間の接着部(以下シール部と称
する)よりも画素部に対して外側に配置され、かつドラ
イバーの耐湿性向上のためポリイミド等の有機樹脂膜で
封止してある。
In general, when a driver is built in an active matrix substrate, the driver is arranged outside the adhesive portion (hereinafter referred to as a seal portion) between the substrates with respect to the pixel portion, as in JP-A-64-68725. Moreover, in order to improve the moisture resistance of the driver, it is sealed with an organic resin film such as polyimide.

【0004】対向する基板間距離を制御する方法として
は対角1インチ程度の小型基板であれば接着部のみにス
ペーサーを配置して5〜6μm程度の基板間距離を確保
するようになっている。一方対角1インチ以上の中型か
ら大型の基板になると接着部のみで基板間距離を制御す
る事は困難であるため、基板間に液晶を注入する際に同
時にスペーサーを注入する。
As a method of controlling the distance between opposed substrates, if a small substrate having a diagonal size of about 1 inch is used, a spacer is arranged only in the adhesive portion to secure a distance between the substrates of about 5 to 6 μm. . On the other hand, since it is difficult to control the distance between the substrates only by the adhesive portion in the case of a medium-sized to large-sized substrate having a diagonal of 1 inch or more, a spacer is injected at the same time when the liquid crystal is injected between the substrates.

【0005】[0005]

【発明が解決しようとする課題】接着部の構造に関し、
前記従来例では画素部に厚い層間絶縁膜を設けた場合、
画素部と接着部で基板間距離が極端に異なる。従って適
正な基板間距離を確保すするためには画素部と接着部の
スペーサー径を変更せねばならぬが、層間絶縁膜の設定
膜厚と実膜厚が異なれば境界近傍では一定の基板間距離
を維持する事が困難であると言う課題を有する。
With respect to the structure of the adhesive portion,
In the conventional example, when a thick interlayer insulating film is provided in the pixel portion,
The distance between the substrates is extremely different between the pixel part and the adhesive part. Therefore, in order to secure a proper distance between the substrates, the spacer diameter of the pixel portion and the adhesive portion must be changed. There is a problem that it is difficult to maintain the distance.

【0006】本発明の目的は、画素部に厚い層間絶縁膜
を設けてもセルギャップの均一性確保が可能な液晶表示
装置の構造を提供する事にある。
An object of the present invention is to provide a structure of a liquid crystal display device capable of ensuring uniformity of cell gap even if a thick interlayer insulating film is provided in a pixel portion.

【0007】[0007]

【課題を解決するための手段】本発明はドライバー内蔵
アクティブマトリクス方式の液晶表示装置において、ア
クティブマトリクス基板はゲート配線とソース配線を層
間分離する第一の層間絶縁膜と、ソース配線と画素電極
を層間分離する第二の層間絶縁膜とを備え、ドライバー
はシール部よりも外周部に形成することと、第一、第二
の両層間絶縁膜は前記接着部にも形成することを特徴と
する。
According to the present invention, in an active matrix type liquid crystal display device with a built-in driver, an active matrix substrate includes a first interlayer insulating film for separating a gate wiring and a source wiring from each other, a source wiring and a pixel electrode. A second interlayer insulating film for interlayer separation, wherein the driver is formed on the outer peripheral portion rather than the seal portion, and both the first and second interlayer insulating films are formed also on the adhesive portion. .

【0008】[0008]

【実施例】本発明による一実施例の液晶表示装置の平面
図を図1に示し、そのA−A’間における断面図を図2
に示す。例えばガラス基板の様な絶縁性基板101上に
真性半導体、導電性半導体、ゲート絶縁膜、ゲート電
極、ソース電極、第一の層間絶縁膜112からなる画素
スイッチング用TFT(以下画素TFTと称す)102
を形成し、同時に前記画素TFT群の駆動用TFT(以
下ドライバーと称す)103を形成する。次に第二の層
間絶縁膜104として例えばポリイミドを2μm程度の
膜厚となるように塗布する。前記ポリイミドを乾燥後、
クロム薄膜を1000Å程度堆積し、パターニングして
エッチングマスク105とする。この後ドライエッチン
グ法にて第二の層間絶縁膜104をパターニングする。
このとき第二の層間絶縁膜104の被エッチング部分
は、画素TFTの画素電極接続部と、対向電極とアクテ
ィブマトリクス基板との導通部、及びシール部110よ
りも外周でドライバー103を含む部分とする。エッチ
ング終了後エッチングマスク105を剥離し、画素電極
106をITOで形成する。次にシール部110で接着
するがその際スペーサーを混入した接着剤で接着する。
最後にスペーサーを混入した液晶を封入する。
1 is a plan view of a liquid crystal display device according to an embodiment of the present invention, and FIG. 2 is a sectional view taken along the line AA '.
Shown in. A pixel switching TFT (hereinafter referred to as a pixel TFT) 102 including an intrinsic semiconductor, a conductive semiconductor, a gate insulating film, a gate electrode, a source electrode, and a first interlayer insulating film 112 on an insulating substrate 101 such as a glass substrate.
And at the same time, a driving TFT (hereinafter referred to as a driver) 103 of the pixel TFT group is formed. Next, for example, polyimide is applied as the second interlayer insulating film 104 so as to have a film thickness of about 2 μm. After drying the polyimide,
A chromium thin film is deposited on the surface of about 1000 Å and patterned to form an etching mask 105. After that, the second interlayer insulating film 104 is patterned by the dry etching method.
At this time, the etched portion of the second interlayer insulating film 104 is a portion including the driver 103 on the outer periphery of the pixel electrode connection portion of the pixel TFT, the conduction portion between the counter electrode and the active matrix substrate, and the seal portion 110. . After the etching is completed, the etching mask 105 is removed and the pixel electrode 106 is formed of ITO. Next, bonding is performed at the seal portion 110, but at this time, bonding is performed with an adhesive containing a spacer.
Finally, the liquid crystal containing the spacer is sealed.

【0009】以上の実施例ではエッチングマスクとして
クロムを用いたが、エッチングマスクになるものなら例
えば窒化ケイ素膜や二酸化ケイ素膜のような別の材料で
もかまわない。
Although chromium is used as the etching mask in the above embodiments, another material such as a silicon nitride film or a silicon dioxide film may be used as long as it serves as an etching mask.

【0010】エッチングマスクが絶縁体であるならばエ
ッチングマスクの除去は必ずしも必要ではなく、エッチ
ングマスクを介して層間絶縁膜の上層に画素電極を形成
する事も可能である。この場合エッチングマスク剥離工
程の削除を伴うので、層間絶縁膜へのダメージを更に低
減できる。またエッチングマスクのパターニング後、フ
ォトレジストの剥離を行うと第二層間絶縁膜104のエ
ッチング時に、エッチングマスクがエッチングガスに曝
されてダメージを受け易くなるため、前記フォトレジス
トは剥離しないまま層間絶縁膜のエッチングを行うのが
望ましい。
If the etching mask is an insulator, it is not always necessary to remove the etching mask, and it is possible to form a pixel electrode on the upper layer of the interlayer insulating film through the etching mask. In this case, since the etching mask removing step is omitted, damage to the interlayer insulating film can be further reduced. Further, if the photoresist is peeled off after patterning the etching mask, the etching mask is easily exposed to etching gas and damaged during etching of the second interlayer insulating film 104. Therefore, the photoresist is not peeled off and the interlayer insulating film is not peeled off. It is desirable to perform the etching.

【0011】以上が本発明の一実施例であるが、シール
部110にも層間絶縁膜104が形成されているため画
素部111とシール部110の段差は殆ど無い。従って
シール部のスペーサーと画素部のスペーサーの径を変更
する必要がなく、セルギャップの均一性制御が容易にな
る。
The above is one embodiment of the present invention, but since the interlayer insulating film 104 is formed also in the seal portion 110, there is almost no step between the pixel portion 111 and the seal portion 110. Therefore, it is not necessary to change the diameter of the spacer of the seal portion and the diameter of the spacer of the pixel portion, and it becomes easy to control the uniformity of the cell gap.

【0012】[0012]

【発明の効果】本発明を用いるとシール部にも画素部と
同一膜厚の層間絶縁膜が存在するため画素部とシール部
の段差は殆どなく、従って画素部とシール部のスペーサ
ー径が同一となるためセルギャップの均一性が向上す
る。
According to the present invention, since an interlayer insulating film having the same film thickness as that of the pixel portion is present in the seal portion, there is almost no step between the pixel portion and the seal portion. Therefore, the spacer diameters of the pixel portion and the seal portion are the same. Therefore, the uniformity of the cell gap is improved.

【図面の簡単な説明】[Brief description of drawings]

【図1】 実施例記載の液晶表示装置の平面図。FIG. 1 is a plan view of a liquid crystal display device described in an embodiment.

【図2】 実施例記載の液晶表示装置のA−A’間に於
ける断面図。
FIG. 2 is a cross-sectional view taken along the line AA ′ of the liquid crystal display device described in the embodiment.

【図3】 実施例の工程を表す断面図。FIG. 3 is a cross-sectional view showing a process of an example.

【図4】 従来例の液晶表示装置の断面図。FIG. 4 is a cross-sectional view of a conventional liquid crystal display device.

【符号の説明】[Explanation of symbols]

101 ガラス基板 102 画素TFT 103 ドライバー 104 第二層間絶縁膜 105 エッチングマスク 106 画素電極 107 対向基板 108 接着剤 109 対向電極 110 シール部 111 画素部 112 第一層間絶縁膜 101 glass substrate 102 pixel TFT 103 driver 104 second interlayer insulating film 105 etching mask 106 pixel electrode 107 counter substrate 108 adhesive 109 counter electrode 110 seal part 111 pixel part 112 first interlayer insulating film

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 ドライバー内蔵アクティブマトリクス方
式の液晶表示装置において、アクティブマトリクス基板
はゲート配線とソース配線を層間分離する第一の層間絶
縁膜と、ソース配線と画素電極を層間分離する第二の層
間絶縁膜とを備え、ドライバーは対向する2枚の基板の
接着部よりも外周部に形成することと、第一、第二の両
層間絶縁膜は前記接着部にも形成することを特徴とする
液晶表示装置。
1. In an active matrix type liquid crystal display device with a built-in driver, an active matrix substrate comprises a first interlayer insulating film for separating a gate wiring and a source wiring from each other and a second interlayer insulating film to separate a source wiring and a pixel electrode from each other. An insulating film is provided, and the driver is formed on an outer peripheral portion of an adhesive portion between two opposing substrates, and both first and second interlayer insulating films are formed on the adhesive portion. Liquid crystal display device.
【請求項2】 請求項1において第二の層間絶縁膜はポ
リイミド樹脂、ポリアミド樹脂、ポリアミドイミド樹脂
などの有機樹脂からなる事を特徴とする液晶表示装置。
2. The liquid crystal display device according to claim 1, wherein the second interlayer insulating film is made of an organic resin such as a polyimide resin, a polyamide resin, or a polyamideimide resin.
JP4006193A 1993-03-01 1993-03-01 Liquid crystal display Expired - Lifetime JP3410754B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4006193A JP3410754B2 (en) 1993-03-01 1993-03-01 Liquid crystal display

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4006193A JP3410754B2 (en) 1993-03-01 1993-03-01 Liquid crystal display

Publications (2)

Publication Number Publication Date
JPH06250222A true JPH06250222A (en) 1994-09-09
JP3410754B2 JP3410754B2 (en) 2003-05-26

Family

ID=12570412

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4006193A Expired - Lifetime JP3410754B2 (en) 1993-03-01 1993-03-01 Liquid crystal display

Country Status (1)

Country Link
JP (1) JP3410754B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11119261A (en) * 1995-08-11 1999-04-30 Sharp Corp Liquid crystal display device, active matrix substrate, and production of liquid crystal display device
JP2001290172A (en) * 1995-08-11 2001-10-19 Sharp Corp Liquid crystal display device
JP2001296558A (en) * 1995-08-11 2001-10-26 Sharp Corp Liquid crystal display device
JP2002189232A (en) * 1995-08-11 2002-07-05 Sharp Corp Liquid crystal display device, and active matrix substrate
US7079215B2 (en) 1997-04-24 2006-07-18 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal panel and equipment comprising said liquid crystal panel
US7636136B2 (en) 1996-04-12 2009-12-22 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for fabricating thereof

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006276287A (en) 2005-03-28 2006-10-12 Nec Corp Display device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11119261A (en) * 1995-08-11 1999-04-30 Sharp Corp Liquid crystal display device, active matrix substrate, and production of liquid crystal display device
JP2001290172A (en) * 1995-08-11 2001-10-19 Sharp Corp Liquid crystal display device
JP2001296558A (en) * 1995-08-11 2001-10-26 Sharp Corp Liquid crystal display device
JP2002189232A (en) * 1995-08-11 2002-07-05 Sharp Corp Liquid crystal display device, and active matrix substrate
US7636136B2 (en) 1996-04-12 2009-12-22 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for fabricating thereof
US7079215B2 (en) 1997-04-24 2006-07-18 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal panel and equipment comprising said liquid crystal panel
US7289184B2 (en) 1997-04-24 2007-10-30 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal panel and equipment comprising said liquid crystal panel
US8045120B2 (en) 1997-04-24 2011-10-25 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal panel and equipment comprising said liquid crystal panel

Also Published As

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JP3410754B2 (en) 2003-05-26

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