JP3253383B2 - Liquid crystal display - Google Patents
Liquid crystal displayInfo
- Publication number
- JP3253383B2 JP3253383B2 JP33748992A JP33748992A JP3253383B2 JP 3253383 B2 JP3253383 B2 JP 3253383B2 JP 33748992 A JP33748992 A JP 33748992A JP 33748992 A JP33748992 A JP 33748992A JP 3253383 B2 JP3253383 B2 JP 3253383B2
- Authority
- JP
- Japan
- Prior art keywords
- liquid crystal
- driver
- transistor
- crystal display
- substrates
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Description
【０００１】[0001]
【産業上の利用分野】本発明は液晶表示装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display.
【０００２】[0002]
【従来の技術】駆動回路内蔵型液晶表示装置の構成は特
開昭６４−６８７２５号のごとく、駆動回路を接着部よ
り外側に配置し、ポリイミドなどの有機絶縁膜を塗布、
パターニングして駆動回路上のみに有機絶縁膜を形成し
ている。このことにより駆動回路の対衝撃性や耐湿性を
向上させている。2. Description of the Related Art The configuration of a liquid crystal display device with a built-in drive circuit is disclosed in Japanese Patent Application Laid-Open No. 64-68725, in which a drive circuit is arranged outside a bonding portion and an organic insulating film such as polyimide is applied.
The organic insulating film is formed only on the drive circuit by patterning. This improves the shock resistance and moisture resistance of the drive circuit.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら前記従来
例では駆動回路が外側に配置されていると駆動回路用の
スペースが必要であり、結果として基板面積の増大を招
くと言う課題を有する。However, in the above-mentioned conventional example, if the driving circuit is disposed outside, a space for the driving circuit is required, and as a result, there is a problem that the substrate area is increased.
【０００４】本発明の目的は、駆動回路の信頼性を低下
させる事無く、省スペース化の出来る液晶表示装置の構
造を提供する事にある。An object of the present invention is to provide a structure of a liquid crystal display device which can save space without deteriorating the reliability of a driving circuit.
【０００５】[0005]
【課題を解決するための手段】本発明の液晶表示装置
は、一対の基板間のシール部の内側には液晶が挟持され
てなり、前記一対の基板の一方の基板の前記シール部内
側にはトランジスタと、前記トランジスタ上にポリイミ
ド樹脂、酸化シリコン及び窒化シリコンのいずれかから
なる絶縁膜を介して配置された画素電極と、前記トラン
ジスタのドライバーとを具備し、前記一方の基板上のド
ライバー上および前記シール部に対向する領域には前記
絶縁膜が配置されておらず、前記ドライバー上には配向
膜が形成されていることを特徴とする。また、本発明の
液晶表示装置は、前記一対の基板の他方の基板上の前記
画素電極に対向する領域及び前記ドライバーに対向する
領域に共通電極を有することを特徴とする。また、本発
明の液晶表示装置は、一対の基板間のシール部の内側に
は液晶が挟持されてなり、前記一対の基板の一方の基板
の前記シール部内側にはトランジスタと、前記トランジ
スタ上に塗布膜を介して配置された画素電極と、前記ト
ランジスタのドライバーとを具備し、前記一方の基板上
のドライバー上および前記シール部に対向する領域には
前記塗布膜が配置されておらず、前記ドライバー上には
配向膜が形成されていることを特徴とする。According to a liquid crystal display device of the present invention, a liquid crystal is sandwiched inside a seal portion between a pair of substrates, and a liquid crystal is sandwiched inside the seal portion of one of the pair of substrates. transistor and said provided pixel electrodes arranged via an insulating film made of any one of polyimide resins, oxidation silicon and silicon nitride over the transistor, and the driver of the transistors, the driver on the one substrate The insulating film is not arranged on the upper side and in a region facing the seal portion, and is oriented on the driver.
It is characterized in that a film is formed . Further, the liquid crystal display device of the present invention is characterized in that a common electrode is provided in a region facing the pixel electrode and a region facing the driver on the other of the pair of substrates. Further, in the liquid crystal display device of the present invention, a liquid crystal is sandwiched inside a seal portion between the pair of substrates, and a transistor is provided inside the seal portion of one of the pair of substrates, and a transistor is provided on the transistor. A pixel electrode disposed via a coating film, and a driver for the transistor, wherein the coating film is not disposed on the driver on the one substrate and in a region facing the seal portion ; On the driver
It is characterized in that an alignment film is formed .
【０００６】[0006]
【実施例】本発明による一実施例の液晶表示装置の平面
図を図１に示し、そのＸ−Ｘ’間における断面図を図２
に示す。例えばガラス基板の様な絶縁性基板１０１上に
画素スイッチング用ＴＦＴ（以下画素ＴＦＴと称す）１
０２を形成し、同時に前記画素ＴＦＴ群の駆動用ＴＦＴ
（以下ドライバーと称す）１０３を形成する。次に層間
絶縁膜１０４として例えばポリイミドを２μｍ程度の膜
厚となるように塗布する。前記ポリイミドを乾燥後、ク
ロム薄膜を１０００Å程度堆積し、パターニングして前
記層間絶縁膜１０４のエッチングマスクとする。この後
ドライエッチング法にて層間絶縁膜１０４をパターニン
グする。このとき層間絶縁膜１０４の被エッチング部分
は、画素ＴＦＴの画素電極接続部と、ドライバー部を含
む非画素表示部分とする。エッチング終了後エッチング
マスクを剥離し、画素電極１０６をＩＴＯで形成する。
次に絶縁性基板１０１と対向基板１０７をシール部１１
０で接着する。1 is a plan view of a liquid crystal display device according to an embodiment of the present invention, and FIG. 2 is a sectional view taken along line XX 'of FIG.
Shown in For example, a pixel switching TFT (hereinafter, referred to as a pixel TFT) 1 is placed on an insulating substrate 101 such as a glass substrate.
02, and at the same time, a driving TFT for the pixel TFT group
(Hereinafter referred to as a driver) 103 is formed. Next, for example, polyimide is applied as the interlayer insulating film 104 so as to have a thickness of about 2 μm. After drying the polyimide, a chromium thin film is deposited to a thickness of about 1000 ° and patterned to form an etching mask for the interlayer insulating film 104. Thereafter, the interlayer insulating film 104 is patterned by a dry etching method. At this time, the portion to be etched of the interlayer insulating film 104 is a non-pixel display portion including a pixel electrode connection portion of the pixel TFT and a driver portion. After the etching is completed, the etching mask is removed, and the pixel electrode 106 is formed of ITO.
Next, the insulating substrate 101 and the counter substrate 107 are
Adhere with 0.
【０００７】以上が本発明を用いた液晶表示装置の構成
であるが、２μｍ程度の膜厚を持つ層間絶縁膜１０４が
ドライバー部に重ならないことにより、層間絶縁膜１０
４自体の分極によるドライバーのチャージアップを防ぐ
ことが出来る。また対向基板側に形成する対向電極１１
１は少なくともドライバー部の上部に液晶層を介して重
なるよう形成するのであるが、対向電極１１１は共通電
位になっているため、対向電極１１１とドライバー部と
の間に挟まれる部分の液晶層には基本的に電界がかから
ない。従って液晶層の下に位置するドライバー部にも電
界がかからないため、ドライバーの誤動作も防止でき
る。The above is the configuration of the liquid crystal display device using the present invention. However, since the interlayer insulating film 104 having a thickness of about 2 μm does not overlap the driver, the interlayer insulating film 10
4 can prevent the driver from being charged up due to the polarization of itself. Also, a counter electrode 11 formed on the counter substrate side
1 is formed so as to overlap at least the upper part of the driver portion with a liquid crystal layer interposed therebetween. However, since the counter electrode 111 is at a common potential, the portion of the liquid crystal layer sandwiched between the counter electrode 111 and the driver portion is Basically has no electric field. Therefore, no electric field is applied to the driver portion located below the liquid crystal layer, so that malfunction of the driver can be prevented.
【０００８】以上の実施例ではエッチングマスクとして
クロムを用いたが、エッチングマスクになるものなら例
えば窒化ケイ素膜や二酸化ケイ素膜のような別の材料で
もかまわない。Although chromium is used as an etching mask in the above embodiment, another material such as a silicon nitride film or a silicon dioxide film may be used as the etching mask.
【０００９】また、エッチングマスクを絶縁体で形成し
た場合には、エッチングマスクの除去は必ずしも必要で
はなく、エッチングマスクを介して層間絶縁膜１０４の
上層に画素電極を形成する事も可能である。この場合エ
ッチングマスク剥離工程の削除を伴うので、層間絶縁膜
１０４へのダメージを更に低減できる。When the etching mask is formed of an insulator, it is not always necessary to remove the etching mask, and a pixel electrode can be formed on the interlayer insulating film 104 via the etching mask. In this case, since the etching mask stripping step is omitted, damage to the interlayer insulating film 104 can be further reduced.
【００１０】また画素電極も例えばアルミニウムが使え
るなどＩＴＯには限らない。The pixel electrode is not limited to ITO, for example, aluminum can be used.
【００１１】[0011]
【発明の効果】本発明を用いれば、ドライバーは画素表
示エリア近傍にあるため省スペース化がはかれる。さら
にドライバー上には配向膜以外の絶縁膜あるいはＩＴＯ
などの導電性膜がないために外部電場の影響を受けにく
い。According to the present invention, since the driver is located near the pixel display area, the space can be saved. Furthermore, an insulating film other than the alignment film or ITO is formed on the driver.
And the like, there is no conductive film, so that it is hardly affected by an external electric field.
【図１】 実施例記載の液晶表示装置の平面図。FIG. 1 is a plan view of a liquid crystal display device described in an embodiment.
【図２】 実施例記載の液晶表示装置のＸ−Ｘ’間に於
ける断面図。FIG. 2 is a cross-sectional view taken along line XX ′ of the liquid crystal display device described in the embodiment.
【図３】 従来例の液晶表示装置の断面図。FIG. 3 is a cross-sectional view of a conventional liquid crystal display device.
１０１ ガラス基板 １０２ 画素ＴＦＴ １０３ ドライバー １０４ 層間絶縁膜 １０６ 画素電極 １０７ 対向基板 １０８ 画素表示部 １０９ 接着剤 １１０ シール部 １１１ 対向電極 DESCRIPTION OF SYMBOLS 101 Glass substrate 102 Pixel TFT 103 Driver 104 Interlayer insulating film 106 Pixel electrode 107 Counter substrate 108 Pixel display part 109 Adhesive 110 Seal part 111 Counter electrode
フロントページの続き (56)参考文献 特開 平２−234134（ＪＰ，Ａ) 特開 平２−157827（ＪＰ，Ａ) 特開 平３−9328（ＪＰ，Ａ) 特開 昭62−251723（ＪＰ，Ａ) 特開 昭58−85478（ＪＰ，Ａ) 特開 平４−50818（ＪＰ，Ａ)Continuation of the front page (56) References JP-A-2-234134 (JP, A) JP-A-2-15727 (JP, A) JP-A-3-9328 (JP, A) JP-A-62-251723 (JP, A) JP-A-58-85478 (JP, A) JP-A-4-50818 (JP, A)
Claims (3)
晶が挟持されてなり、前記一対の基板の一方の基板の前
記シール部内側にはトランジスタと、前記トランジスタ
上にポリイミド樹脂、酸化シリコン及び窒化シリコンの
いずれかからなる絶縁膜を介して配置された画素電極
と、前記トランジスタのドライバーとを具備し、前記一
方の基板上のドライバー上および前記シール部に対向す
る領域には前記絶縁膜が配置されておらず、前記ドライ
バー上には配向膜が形成されていることを特徴とする液
晶表示装置。1. A liquid crystal is held between the inside of the seal portion between the pair of substrates, and the sealing portion on the inner transistor of one substrate of the pair of substrates, polyimide resins on said transistor, acid A pixel electrode disposed via an insulating film made of any of silicon nitride and silicon nitride, and a driver of the transistor. No insulating film is placed ,
A liquid crystal display device comprising an alignment film formed on a bar .
画素電極に対向する領域及び前記ドライバーに対向する
領域に共通電極を有することを特徴とする請求項１に記
載の液晶表示装置。2. The liquid crystal display device according to claim 1, wherein a common electrode is provided in a region facing the pixel electrode and a region facing the driver on the other substrate of the pair of substrates.
晶が挟持されてなり、前記一対の基板の一方の基板の前
記シール部内側にはトランジスタと、前記トランジスタ
上に塗布膜を介して配置された画素電極と、前記トラン
ジスタのドライバーとを具備し、前記一方の基板上のド
ライバー上および前記シール部に対向する領域には前記
塗布膜が配置されておらず、前記ドライバー上には配向
膜が形成されていることを特徴とする液晶表示装置。3. A liquid crystal is sandwiched inside a seal portion between the pair of substrates. A transistor is provided inside the seal portion of one of the pair of substrates via a transistor, and a coating film is formed on the transistor. A pixel electrode disposed thereon, and a driver for the transistor, wherein the coating film is not disposed on the driver on the one substrate and in a region facing the seal portion, and is oriented on the driver.
A liquid crystal display device comprising a film .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33748992A JP3253383B2 (en) | 1992-12-17 | 1992-12-17 | Liquid crystal display |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33748992A JP3253383B2 (en) | 1992-12-17 | 1992-12-17 | Liquid crystal display |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06186578A JPH06186578A (en) | 1994-07-08 |
| JP3253383B2 true JP3253383B2 (en) | 2002-02-04 |
Family
ID=18309135
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33748992A Expired - Lifetime JP3253383B2 (en) | 1992-12-17 | 1992-12-17 | Liquid crystal display |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3253383B2 (en) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6011607A (en) | 1995-02-15 | 2000-01-04 | Semiconductor Energy Laboratory Co., | Active matrix display with sealing material |
| US5834327A (en) * | 1995-03-18 | 1998-11-10 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing display device |
| TWI228625B (en) | 1995-11-17 | 2005-03-01 | Semiconductor Energy Lab | Display device |
| TW309633B (en) | 1995-12-14 | 1997-07-01 | Handotai Energy Kenkyusho Kk | |
| JP3477301B2 (en) | 1995-12-19 | 2003-12-10 | 株式会社半導体エネルギー研究所 | Active matrix type liquid crystal display device and manufacturing method thereof |
| JPH09171192A (en) * | 1995-12-19 | 1997-06-30 | Semiconductor Energy Lab Co Ltd | Active matrix type liquid crystal display device and its manufacture |
| JP3737176B2 (en) | 1995-12-21 | 2006-01-18 | 株式会社半導体エネルギー研究所 | Liquid crystal display |
| JPH10104663A (en) * | 1996-09-27 | 1998-04-24 | Semiconductor Energy Lab Co Ltd | Electrooptic device and its formation |
| KR100505564B1 (en) * | 1997-08-25 | 2005-09-26 | 삼성전자주식회사 | Thin film transistor liquid crystal display and manufacturing method thereof |
| US8853696B1 (en) | 1999-06-04 | 2014-10-07 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and electronic device |
| KR100315209B1 (en) * | 1999-12-17 | 2001-11-29 | 구본준, 론 위라하디락사 | Liquid Crystal Display Device and Method of Fabricating the Same |
| JP5084579B2 (en) * | 2008-03-26 | 2012-11-28 | 株式会社半導体エネルギー研究所 | Liquid crystal display |
-
1992
- 1992-12-17 JP JP33748992A patent/JP3253383B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06186578A (en) | 1994-07-08 |
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