JPH06118404A - Liquid crystal display device - Google Patents

Liquid crystal display device

Info

Publication number
JPH06118404A
JPH06118404A JP27141292A JP27141292A JPH06118404A JP H06118404 A JPH06118404 A JP H06118404A JP 27141292 A JP27141292 A JP 27141292A JP 27141292 A JP27141292 A JP 27141292A JP H06118404 A JPH06118404 A JP H06118404A
Authority
JP
Japan
Prior art keywords
liquid crystal
crystal display
display device
thin film
film transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP27141292A
Other languages
Japanese (ja)
Inventor
Minoru Matsuo
稔 松尾
Takashi Nakazawa
尊史 中澤
Hideyuki Akanuma
英幸 赤沼
Kiyobumi Kitawada
清文 北和田
Tsutomu Hashizume
勉 橋爪
Yoshiyuki Kitazawa
良幸 北沢
Sumisato Shimone
純理 下根
Satoshi Inoue
聡 井上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP27141292A priority Critical patent/JPH06118404A/en
Publication of JPH06118404A publication Critical patent/JPH06118404A/en
Pending legal-status Critical Current

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  • Liquid Crystal (AREA)

Abstract

PURPOSE:To obtain good moisture resistance and to eliminate the need for a special process for protecting driver circuits for driving thin-film transistors (TFTs) by making it possible to install the driver circuits right under the sealing part of the liquid crystal display device. CONSTITUTION:Transparent substrates 1, 2, the driver circuits 3 for driving the TFTs, wirings 4 formed by using metals, such as Cr, Al and Ta, org. adhesives 5, such as epoxy resins, input terminals 6 for the driver circuits 3, a liquid crystal layer 7, a counter electrode 8 consisting of a transparent conductive film consisting of ITO, etc., pixel electrodes 9 of the TFTs, source wirings of the TFTs and pixel electrodes 9 are insulated and separated to different layers and an insulating film 11 for protecting the driver circuits 3 is provided. Org. materials, such as polyimide, inorg. materials, such as SiO2, or combinations of the org. materials and the inorg. materials are used as this insulating film 11. Then, the formation of the driver circuit 3 for driving the TFTs right under the sealing parts of the liquid crystal display device is possible.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、二枚の基板間に封入さ
れた液晶を用いて表示を行うアクティブ型液晶表示装置
に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an active type liquid crystal display device which performs display by using liquid crystal sealed between two substrates.

【0002】[0002]

【従来の技術】図3は、従来の液晶表示体装置の接合部
を示す図である。薄膜トランジスタおよび薄膜トランジ
スタを駆動するドライバー回路が形成された石英やガラ
スなどの透明基板1および対向電極が形成された透明基
板2によって構成された液晶表示装置を示し、薄膜トラ
ンジスタを駆動するドライバー回路3、ドライバー回路
3からの信号を伝達するCr、Al、Taなどの金属を
用いた配線4を示す。前記のドライバー回路3は、薄膜
トランジスタと同時に基板1上に形成される。図3にお
いて、5は透明基板1、2を接合しているエポキシ樹脂
などの有機接着剤、6は前記のドライバー回路への入力
端子を示している。図4は、図3におけるAA部の断面
を示したもので、図4において、1、2は透明基板、3
は薄膜トランジスタを駆動するドライバー回路、4は配
線、5は有機接着剤、7は液晶層、8はITOなどの透
明導電性膜からなる対向電極、9は薄膜トランジスタの
画素電極、6は入力端子を示す。従来は、液晶表示装置
の表示部10より外側にドライバー回路3が形成されて
いた。しかしながら、この方法では、外周部にあるドラ
イバー回路3の耐湿性向上および損傷防止の為に、ドラ
イバー回路の上部に封止材を必要とする。また、液晶表
示装置が高精細化すると配線4の本数が増え、配線4に
沿って、水分が液晶層7に侵入し易くなり、液晶表示装
置の劣化が外周部から起き始めてしまう。
2. Description of the Related Art FIG. 3 is a view showing a joint portion of a conventional liquid crystal display device. 1 shows a liquid crystal display device including a transparent substrate 1 such as quartz or glass on which a thin film transistor and a driver circuit for driving the thin film transistor are formed, and a transparent substrate 2 on which a counter electrode is formed. Wiring 4 made of a metal such as Cr, Al, or Ta for transmitting the signal from 3 is shown. The driver circuit 3 is formed on the substrate 1 at the same time as the thin film transistor. In FIG. 3, reference numeral 5 denotes an organic adhesive such as epoxy resin that bonds the transparent substrates 1 and 2, and 6 denotes an input terminal to the driver circuit. FIG. 4 shows a cross section taken along the line AA in FIG. 3. In FIG.
Is a driver circuit for driving a thin film transistor, 4 is a wiring, 5 is an organic adhesive, 7 is a liquid crystal layer, 8 is a counter electrode made of a transparent conductive film such as ITO, 9 is a pixel electrode of a thin film transistor, and 6 is an input terminal. . Conventionally, the driver circuit 3 is formed outside the display unit 10 of the liquid crystal display device. However, this method requires a sealing material on the upper part of the driver circuit 3 in order to improve the moisture resistance and prevent damage of the driver circuit 3 on the outer peripheral portion. Further, as the liquid crystal display device becomes finer, the number of wirings 4 increases, water easily enters the liquid crystal layer 7 along the wirings 4, and deterioration of the liquid crystal display device starts to occur from the outer peripheral portion.

【0003】[0003]

【発明が解決しようとする課題】本発明により解決しよ
うとする課題は、薄膜トランジスタを駆動するドライバ
ー回路を液晶表示装置の封止部直下に設けることを可能
にする構造を考案することにより、液晶表示装置の信頼
性の向上と、生産性の向上を達成することにある。
The problem to be solved by the present invention is to provide a liquid crystal display by devising a structure that allows a driver circuit for driving a thin film transistor to be provided immediately below a sealing portion of a liquid crystal display device. It is to achieve the improvement of the reliability of the device and the improvement of the productivity.

【0004】[0004]

【課題を解決するための手段】本発明の液晶表示装置
は、前記の問題点を解決するためのものであり、薄膜ト
ランジスタのソース配線と画素電極が有機絶縁膜によっ
て絶縁され、それぞれ異なる層に形成されており、前記
の有機絶縁膜が、液晶表示装置の封止箇所ならびに薄膜
トランジスタを駆動するドライバー回路の上部に形成さ
れ、前記のドライバー回路が、液晶表示装置の封止部直
下に形成されていることを特徴とする。
The liquid crystal display device of the present invention is to solve the above-mentioned problems, and the source wiring of the thin film transistor and the pixel electrode are insulated by an organic insulating film and formed in different layers. The organic insulating film is formed on the sealing portion of the liquid crystal display device and above the driver circuit for driving the thin film transistor, and the driver circuit is formed immediately below the sealing portion of the liquid crystal display device. It is characterized by

【0005】[0005]

【実施例】以下に、本発明の液晶表示装置について、図
示の実施例により詳細に説明する。
The liquid crystal display device of the present invention will be described in detail below with reference to the embodiments shown in the drawings.

【0006】図1は、本発明の液晶表示装置の一実施例
を示す図である。図1において、1、2は透明基板、3
は薄膜トランジスタを駆動するドライバー回路、Cr、
Al、Taなどの金属を用いた配線4、5はエポキシ樹
脂などの有機接着剤、6はドライバー回路3の入力端
子、7は液晶層、8はITOなどの透明導電性膜からな
る対向電極、9は薄膜トランジスタの画素電極、11は
薄膜トランジスタのソース配線と画素電極を異なる層に
絶縁分離し、かつ前記のドライバー回路3を保護するた
めの絶縁膜を示す。前記絶縁膜11としては、ポリイミ
ドやアクリルなどの有機材料や、SiO2やSiNxなど
の無機材料、あるいは前記有機材料と無機材料の組み合
わせなどを用いることが可能である。
FIG. 1 is a diagram showing an embodiment of the liquid crystal display device of the present invention. In FIG. 1, 1 and 2 are transparent substrates and 3
Is a driver circuit for driving the thin film transistor, Cr,
Wirings 4, 5 made of metal such as Al or Ta are organic adhesives such as epoxy resin, 6 are input terminals of the driver circuit 3, 7 is a liquid crystal layer, 8 is a counter electrode made of a transparent conductive film such as ITO, Reference numeral 9 indicates a pixel electrode of the thin film transistor, and 11 indicates an insulating film for insulating the source wiring of the thin film transistor and the pixel electrode into different layers and protecting the driver circuit 3. As the insulating film 11, it is possible to use an organic material such as polyimide or acrylic, an inorganic material such as SiO 2 or SiN x , or a combination of the organic material and the inorganic material.

【0007】図2(a)および(b)は、本発明の液晶
表示装置に用いられる薄膜トランジスタの平面図および
断面図を示す。1は透明基板、薄膜トランジスタのチャ
ネル領域12、薄膜トランジスタのゲート絶縁膜13、
薄膜トランジスタのソース・ドレイン領域14、薄膜ト
ランジスタのゲート配線15、薄膜トランジスタのソー
ス配線16、前記のゲート配線15とソース配線16を
絶縁するSiO2やSiNxなどの無機材料からなる第一
の絶縁膜17、薄膜トランジスタの画素電極9、前記の
ソース配線16と画素電極9を絶縁するポリイミドやア
クリルなどの有機材料からなる第二の絶縁膜18を示
す。図1における絶縁膜11は、図2における第二の絶
縁膜18を用いて形成されている。
2A and 2B are a plan view and a sectional view of a thin film transistor used in the liquid crystal display device of the present invention. 1 is a transparent substrate, a channel region 12 of the thin film transistor, a gate insulating film 13 of the thin film transistor,
A source / drain region 14 of the thin film transistor, a gate wiring 15 of the thin film transistor, a source wiring 16 of the thin film transistor, a first insulating film 17 made of an inorganic material such as SiO 2 or SiN x for insulating the gate wiring 15 and the source wiring 16 from each other, The pixel electrode 9 of the thin film transistor, and the second insulating film 18 made of an organic material such as polyimide or acrylic that insulates the source wiring 16 and the pixel electrode 9 from each other are shown. The insulating film 11 in FIG. 1 is formed by using the second insulating film 18 in FIG.

【0008】本実施例によれば、薄膜トランジスタを駆
動するドライバー回路を、液晶表示装置の封止部直下に
形成することが可能となるために、ドライバー回路を保
護するための特別な封止作業を必要としない。また、本
実施例に示すドライバー回路の位置では、ドライバー回
路は液晶層の影響を受けない。また、本実施例におい
て、絶縁膜11上にITOなどの膜を残すことにより、
接着剤5に混入されているギャップ材がポリイミドなど
に埋没することなく、基板1、2の隙間を精度良く仕上
げる事が可能である。ここで対向基板側の対向電極を除
去する理由は、絶縁膜11上に残されたITO膜と対向
電極の間に容量が形成されないようにするためである。
According to this embodiment, since the driver circuit for driving the thin film transistor can be formed immediately below the sealing portion of the liquid crystal display device, a special sealing work for protecting the driver circuit is required. do not need. Further, at the position of the driver circuit shown in this embodiment, the driver circuit is not affected by the liquid crystal layer. Further, in this embodiment, by leaving a film such as ITO on the insulating film 11,
The gap between the substrates 1 and 2 can be accurately finished without the gap material mixed in the adhesive 5 being buried in polyimide or the like. Here, the reason for removing the counter electrode on the counter substrate side is to prevent a capacitance from being formed between the counter electrode and the ITO film left on the insulating film 11.

【0009】[0009]

【発明の効果】以上説明したように、本発明により以下
の効果が得られる。
As described above, the following effects can be obtained by the present invention.

【0010】(1).液晶表示装置の表示部外に露出す
る配線部がなくなり、耐湿性の良好な液晶表示装置が得
られる。
(1). Since the wiring portion exposed outside the display portion of the liquid crystal display device is eliminated, a liquid crystal display device having excellent moisture resistance can be obtained.

【0011】(2).薄膜トランジスタを駆動するドラ
イバー回路を、液晶表示装置の封止部直下に形成するこ
とが可能となり、ドライバー回路を保護する特別な工程
が不要になると同時に、液晶表示装置の取扱い時に生じ
るドライバー回路の損傷(キズ、断線)を防止し、歩止
まりの向上が期待できる。
(2). A driver circuit for driving a thin film transistor can be formed immediately below a sealing portion of a liquid crystal display device, and a special step for protecting the driver circuit is not required, and at the same time, the driver circuit is damaged when handling the liquid crystal display device ( It is possible to prevent scratches and wire breaks and improve yield.

【0012】(3).薄膜トランジスタを駆動するドラ
イバー回路と薄膜トランジスタの配線長を短くできるた
めに、液晶表示装置の小型化が可能である。
(3). Since the wiring length between the driver circuit for driving the thin film transistor and the thin film transistor can be shortened, the liquid crystal display device can be downsized.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の液晶表示装置の一例を示す図。FIG. 1 is a diagram showing an example of a liquid crystal display device of the present invention.

【図2】本発明の液晶表示装置に用いられる薄膜トラン
ジスタの平面図および断面図。
2A and 2B are a plan view and a cross-sectional view of a thin film transistor used in a liquid crystal display device of the present invention.

【図3】従来の液晶表示体装置の接合部を示す図。FIG. 3 is a diagram showing a joint portion of a conventional liquid crystal display device.

【図4】図3におけるAA部の断面図。FIG. 4 is a sectional view of an AA portion in FIG.

【符号の説明】[Explanation of symbols]

1・・・・薄膜トランジスタが形成された透明基板 2・・・・対向電極が形成された透明基板 3・・・・薄膜トランジスタを駆動するドライバー回路 4・・・・配線 5・・・・有機接着剤 6・・・・ドライバー回路の入力端子 7・・・・液晶層 8・・・・対向電極 9・・・・画素電極 10・・・・液晶表示装置の表示部 11・・・・絶縁膜 12・・・・薄膜トランジスタのチャネル領域 13・・・・薄膜トランジスタのゲート絶縁膜 14・・・・薄膜トランジスタのソース・ドレイン領域 15・・・・薄膜トランジスタのゲート配線 16・・・・薄膜トランジスタのソース配線 17・・・・第一の絶縁膜 18・・・・第二の絶縁膜 DESCRIPTION OF SYMBOLS 1 ...- Transparent substrate on which a thin film transistor is formed 2 ...- Transparent substrate on which a counter electrode is formed 3 ...- Driver circuit for driving a thin film transistor 4 ... Wiring 5 ... Organic adhesive 6 ... Input terminal of driver circuit 7 ... Liquid crystal layer 8 ... Counter electrode 9 ... Pixel electrode 10 ... Display portion of liquid crystal display device 11 ... Insulating film 12 .... Channel region of thin film transistor 13 ... Gate insulating film of thin film transistor 14 ... Source / drain region of thin film transistor 15 ... Gate wiring of thin film transistor 16 ... Source wiring of thin film transistor 17 ... .... First insulating film 18 ... Second insulating film

───────────────────────────────────────────────────── フロントページの続き (72)発明者 北和田 清文 長野県諏訪市大和3丁目3番5号セイコー エプソン株式会社内 (72)発明者 橋爪 勉 長野県諏訪市大和3丁目3番5号セイコー エプソン株式会社内 (72)発明者 北沢 良幸 長野県諏訪市大和3丁目3番5号セイコー エプソン株式会社内 (72)発明者 下根 純理 長野県諏訪市大和3丁目3番5号セイコー エプソン株式会社内 (72)発明者 井上 聡 長野県諏訪市大和3丁目3番5号セイコー エプソン株式会社内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Kiyofumi Kitawada 3-5 Yamato, Suwa, Nagano Seiko Epson Corporation (72) Inventor Tsutomu Hashizume 3-5 Yamato, Suwa, Nagano Prefecture Seiko Epson Co., Ltd. (72) Inventor Yoshiyuki Kitazawa 3-5 Yamato, Suwa, Nagano Seiko Epson Co., Ltd. (72) Inventor Junri Shimone 3-5 Yamato, Suwa, Nagano Seiko Epson Corporation (72) Inventor Satoshi Inoue 3-5-3 Yamato, Suwa-shi, Nagano Seiko Epson Corporation

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 薄膜トランジスタおよび薄膜トランジス
タを駆動するドライバー回路が形成された基板と、対向
電極が形成された対向基板が、有機接着剤を用いて封止
され、前記の二枚の基板の間に封入された液晶により表
示を行う液晶表示装置において、前記のドライバー回路
が、二枚の基板の封止箇所の直下に形成されていること
を特徴とする液晶表示装置。
1. A substrate on which a thin film transistor and a driver circuit for driving the thin film transistor are formed, and an opposite substrate on which an opposite electrode is formed are sealed with an organic adhesive and sealed between the two substrates. A liquid crystal display device that performs display using the generated liquid crystal, wherein the driver circuit is formed immediately below a sealing portion of two substrates.
【請求項2】 前記の薄膜トランジスタのソース配線と
画素電極が有機絶縁膜によって絶縁され、それぞれ異な
る層に形成されていることを特徴とする請求項1に記載
の液晶表示装置。
2. The liquid crystal display device according to claim 1, wherein the source wiring and the pixel electrode of the thin film transistor are insulated by an organic insulating film and are formed in different layers.
【請求項3】 前記の有機絶縁膜および画素電極が、前
記の二枚の基板の封止箇所ならびに前記のドライバー回
路の上部に形成されていることを特徴とする請求項1に
記載の液晶表示装置。
3. The liquid crystal display according to claim 1, wherein the organic insulating film and the pixel electrode are formed on a sealing portion of the two substrates and on an upper portion of the driver circuit. apparatus.
【請求項4】 前記の対向基板の対向電極が、前記の二
枚の基板の封止箇所のみ除去されていることを特徴とす
る請求項1に記載の液晶表示装置。
4. The liquid crystal display device according to claim 1, wherein the counter electrode of the counter substrate is removed only at a sealing portion of the two substrates.
JP27141292A 1992-10-09 1992-10-09 Liquid crystal display device Pending JPH06118404A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP27141292A JPH06118404A (en) 1992-10-09 1992-10-09 Liquid crystal display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27141292A JPH06118404A (en) 1992-10-09 1992-10-09 Liquid crystal display device

Publications (1)

Publication Number Publication Date
JPH06118404A true JPH06118404A (en) 1994-04-28

Family

ID=17499688

Family Applications (1)

Application Number Title Priority Date Filing Date
JP27141292A Pending JPH06118404A (en) 1992-10-09 1992-10-09 Liquid crystal display device

Country Status (1)

Country Link
JP (1) JPH06118404A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06138488A (en) * 1992-10-29 1994-05-20 Seiko Epson Corp Liquid crystal display device
JPH08220560A (en) * 1995-02-15 1996-08-30 Semiconductor Energy Lab Co Ltd Active matrix display device
US6703643B2 (en) 1995-02-15 2004-03-09 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device with an integrated circuit covered with a sealing material
US7053973B1 (en) 1996-05-16 2006-05-30 Semiconductor Energy Laboratory Co., Ltd. Display device
US7202927B2 (en) 2001-10-04 2007-04-10 Seiko Epson Corporation Electrooptic device comprising a silicon nitride film formed directly on the data lines and not existent on a side face of contact holes
US7215402B2 (en) 1996-06-25 2007-05-08 Semiconductor Energy Laboratory Co., Ltd. Electronic device having liquid crystal display device
US7417702B2 (en) 1996-05-16 2008-08-26 Semiconductor Energy Laboratory Co., Ltd. Display device
TWI401994B (en) * 2007-06-13 2013-07-11 Sony Corp Display device and manufacturing method thereof

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06138488A (en) * 1992-10-29 1994-05-20 Seiko Epson Corp Liquid crystal display device
US7538849B2 (en) 1995-02-15 2009-05-26 Semiconductor Energy Laboratory Co., Ltd. Active matrix display and forming method thereof
JPH08220560A (en) * 1995-02-15 1996-08-30 Semiconductor Energy Lab Co Ltd Active matrix display device
US6703643B2 (en) 1995-02-15 2004-03-09 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device with an integrated circuit covered with a sealing material
US7053973B1 (en) 1996-05-16 2006-05-30 Semiconductor Energy Laboratory Co., Ltd. Display device
US7417702B2 (en) 1996-05-16 2008-08-26 Semiconductor Energy Laboratory Co., Ltd. Display device
US7215402B2 (en) 1996-06-25 2007-05-08 Semiconductor Energy Laboratory Co., Ltd. Electronic device having liquid crystal display device
US7333160B2 (en) 1996-06-25 2008-02-19 Semiconductor Energy Laboratory Co., Ltd. Display device including resin film
US7474376B2 (en) 1996-06-25 2009-01-06 Semiconductor Energy Laboratory Co., Ltd. Display device
US8643820B2 (en) 1996-06-25 2014-02-04 Semiconductor Energy Laboratory Co., Ltd. Electronic device having liquid crystal display device
US8665409B2 (en) 1996-06-25 2014-03-04 Semiconductor Energy Laboratory Co., Ltd. Display device with sealing material
US9507213B2 (en) 1996-06-25 2016-11-29 Semiconductor Energy Laboratory Co., Ltd. Electronic device having liquid crystal display device
US7202927B2 (en) 2001-10-04 2007-04-10 Seiko Epson Corporation Electrooptic device comprising a silicon nitride film formed directly on the data lines and not existent on a side face of contact holes
TWI401994B (en) * 2007-06-13 2013-07-11 Sony Corp Display device and manufacturing method thereof

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