JPH06258659A - Liquid crystal display device - Google Patents

Liquid crystal display device

Info

Publication number
JPH06258659A
JPH06258659A JP4145593A JP4145593A JPH06258659A JP H06258659 A JPH06258659 A JP H06258659A JP 4145593 A JP4145593 A JP 4145593A JP 4145593 A JP4145593 A JP 4145593A JP H06258659 A JPH06258659 A JP H06258659A
Authority
JP
Japan
Prior art keywords
driver
insulating film
interlayer insulating
liquid crystal
display device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4145593A
Other languages
Japanese (ja)
Inventor
Sumisato Shimone
純理 下根
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP4145593A priority Critical patent/JPH06258659A/en
Publication of JPH06258659A publication Critical patent/JPH06258659A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To save space without degrading the reliability on a driver by arranging a driver nearer a pixel display part than a sealing part. CONSTITUTION:A TFT 102 for pixel switching consisting of a gate electrode, a source electrode, a first interlayer insulating film 113, etc., and a TFT (driver) 103 for driving the pixel electrode are simultaneously formed on an insulating substrate 101. Polyimide is then applied as a second interlayer insulating film 104 and is patterned by a dry etching method. The parts to be etched in the second interlayer insulating film 104 are formed in the parts nearer the outer periphery than the part 108 (sealing part 110) where an active matrix substrate and a counter substrate 107 are adhered at this time. Then, the driver 103 exists on the pixel display part side on the side inner than the sealing part 110 and, therefore, there is no need for assuring the space for the driver outside the sealing part 110. Since the second interlayer insulating film 104 on the driver 103 is not removed, the driver 103 is not damaged by etching.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は液晶表示装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device.

【0002】[0002]

【従来の技術】有機薄膜上に画素電極を形成したことを
特徴とする従来例としては、特公平1−35351号の
ようなものが上げられる。この例では画素電極としてア
ルミニウムを用い、反射型液晶表示装置の構成としてい
る。
2. Description of the Related Art As a conventional example characterized in that a pixel electrode is formed on an organic thin film, Japanese Patent Publication No. 1-35351 can be cited. In this example, aluminum is used as the pixel electrode to form a reflective liquid crystal display device.

【0003】また一般にドライバーをアクティブマトリ
クス基板に内蔵する場合、特開昭64−68725号の
ごとくドライバーは基板間の接着部(以下シール部と称
する)よりも画素部に対して外側に配置され、かつドラ
イバーの耐湿性向上のためポリイミド等の有機樹脂膜で
封止してある。
In general, when a driver is built in an active matrix substrate, the driver is arranged outside the adhesive portion (hereinafter referred to as a seal portion) between the substrates with respect to the pixel portion, as in JP-A-64-68725. Moreover, in order to improve the moisture resistance of the driver, it is sealed with an organic resin film such as polyimide.

【0004】[0004]

【発明が解決しようとする課題】しかし画素表示部の面
積を変える事無くアクティブマトリクス基板を小型化し
ようとするとき、従来のようにドライバーが外側に配置
されているとドライバー用のスペースが必要であり、結
果として基板面積の増大を招く。また通常アクティブマ
トリクス基板は1枚の絶縁性基板上に多数個形成して一
個当たりの製造コストを下げているが、基板面積が増大
すると製造コストを下げれないと言う課題を有する。
However, when attempting to miniaturize the active matrix substrate without changing the area of the pixel display portion, a space for the driver is required if the driver is arranged outside as in the conventional case. Therefore, as a result, the substrate area is increased. Further, usually, a large number of active matrix substrates are formed on one insulating substrate to reduce the manufacturing cost per unit, but there is a problem that the manufacturing cost cannot be reduced if the substrate area increases.

【0005】本発明の目的は、ドライバーの信頼性を低
下させる事無く省スペース化を図り、同時に製造コスト
を下げる事の可能な液晶表示装置の構造を提供する事に
ある。
An object of the present invention is to provide a structure of a liquid crystal display device which can save the space without lowering the reliability of the driver and at the same time reduce the manufacturing cost.

【0006】[0006]

【課題を解決するための手段】本発明はドライバー内蔵
アクティブマトリクス方式の液晶表示装置において、ア
クティブマトリクス基板はゲート配線とソース配線を層
間分離する第一の層間絶縁膜と、ソース配線と画素電極
を層間分離する第二の層間絶縁膜とを備え、ドライバー
を対向する2枚の基板の接着部よりも画素表示部寄り配
置することと、少なくとも第二の層間絶縁膜は前記ドラ
イバー上にも形成する事と、少なくとも第二の層間絶縁
膜は対向基板との接着部及びその外周には形成しない事
と、前記ドライバー上の層間絶縁膜上には他の配線など
と導通をとらず浮遊電位としたITOなどの導電性薄膜
を形成することと、対向する基板のドライバーに対応す
る位置には対向電極である導電性薄膜を形成しない事を
特徴とする。
According to the present invention, in an active matrix type liquid crystal display device with a built-in driver, an active matrix substrate includes a first interlayer insulating film for separating a gate wiring and a source wiring from each other, a source wiring and a pixel electrode. A second interlayer insulating film for separating the layers, and arranging the driver closer to the pixel display part than the adhesive part of the two substrates facing each other; and forming at least the second interlayer insulating film also on the driver. And that at least the second interlayer insulating film is not formed on the bonding portion with the opposite substrate and its outer periphery, and on the interlayer insulating film on the driver is not electrically connected to other wiring or the like and has a floating potential. It is characterized in that a conductive thin film such as ITO is formed, and that the conductive thin film that is a counter electrode is not formed at a position corresponding to the driver of the facing substrate.

【0007】[0007]

【実施例】本発明による一実施例の液晶表示装置の平面
図を図1に示し、そのA−A’間における断面図を図2
に示す。絶縁性基板101上に導電性半導体、真性半導
体、ゲート絶縁膜、ゲート電極、ソース電極、第一の層
間絶縁膜113からなる画素スイッチング用TFT(以
下画素TFTと称す)102及び前記画素TFT群の駆
動用TFT(以下ドライバーと称す)103を同時に形
成する。次に第二層間絶縁膜104として例えばポリイ
ミドを2μm程度の膜厚となるように塗布する。前記ポ
リイミドを乾燥後、クロム薄膜を1000Å程度堆積
し、パターニングしてエッチングマスク105とする。
この後ドライエッチング法にて第二層間絶縁膜104を
パターニングする。このとき第二層間絶縁膜104の被
エッチング部分は、画素TFT102の画素電極接続部
と、対向電極109とアクティブマトリクス基板との導
通部と、アクティブマトリクス基板と対向基板との接着
部(以下シール部と称す)110、及びシール部110
よりも外周部とする。エッチング終了後エッチングマス
ク105を剥離し、画素電極106をITOで形成す
る。このとき第二層間絶縁膜104上のドライバー部に
対応する位置にもITOを形成し、シールド112とす
る。次に絶縁性基板101と対向基板107を接着部
(以下シール部と称す)110で接着するがその際ギャ
ップ材を混入した接着剤で接着する。最後にギャップ材
を混入した液晶を封入する。
1 is a plan view of a liquid crystal display device according to an embodiment of the present invention, and FIG. 2 is a sectional view taken along the line AA '.
Shown in. A pixel switching TFT (hereinafter referred to as a pixel TFT) 102 including a conductive semiconductor, an intrinsic semiconductor, a gate insulating film, a gate electrode, a source electrode, and a first interlayer insulating film 113 on an insulating substrate 101 and the pixel TFT group. A driving TFT (hereinafter referred to as a driver) 103 is formed at the same time. Next, as the second interlayer insulating film 104, for example, polyimide is applied so as to have a film thickness of about 2 μm. After the polyimide is dried, a chrome thin film of about 1000 Å is deposited and patterned to form an etching mask 105.
After that, the second interlayer insulating film 104 is patterned by the dry etching method. At this time, the etched portion of the second interlayer insulating film 104 includes a pixel electrode connecting portion of the pixel TFT 102, a conductive portion between the counter electrode 109 and the active matrix substrate, and an adhesive portion between the active matrix substrate and the counter substrate (hereinafter referred to as a seal portion). 110) and the seal portion 110
Rather than the outer circumference. After the etching is completed, the etching mask 105 is removed and the pixel electrode 106 is formed of ITO. At this time, ITO is also formed at a position corresponding to the driver portion on the second interlayer insulating film 104 to form the shield 112. Next, the insulating substrate 101 and the counter substrate 107 are adhered to each other at an adhesive portion (hereinafter referred to as a seal portion) 110. At that time, the insulating substrate 101 and the counter substrate 107 are adhered to each other with an adhesive containing a gap material. Finally, the liquid crystal mixed with the gap material is sealed.

【0008】別の実施例として前記実施例に加え、第二
層間絶縁膜104の被エッチング部分をシール部11
0、画素TFT102の画素電極接続部、対向電極10
9とアクティブマトリクス基板との導通部、及びアクテ
ィブマトリクス基板の外部接続端子部とした。これを用
いると通常Alを主成分とする導電性薄膜を用いるドラ
イバー103から外部接続端子への配線の腐食を低減可
能であり結果として、従来のようにアクティブマトリク
ス基板形成後にポリイミドで封止する事無く液晶表示装
置の信頼性を保つ事が可能となった。
As another embodiment, in addition to the above embodiment, the portion to be etched of the second interlayer insulating film 104 is covered with the seal portion 11.
0, the pixel electrode connection portion of the pixel TFT 102, the counter electrode 10
9 and the active matrix substrate, and the external connection terminal portion of the active matrix substrate. If this is used, it is possible to reduce the corrosion of the wiring from the driver 103, which normally uses a conductive thin film containing Al as a main component, to the external connection terminal. As a result, it is possible to seal with polyimide after forming the active matrix substrate as in the conventional case. Without it, it became possible to maintain the reliability of the liquid crystal display device.

【0009】以上の実施例ではエッチングマスクとして
クロムを用いたが、エッチングマスクになるものなら例
えば窒化ケイ素膜や二酸化ケイ素膜のような別の材料で
もかまわない。
Although chromium is used as the etching mask in the above embodiments, another material such as a silicon nitride film or a silicon dioxide film may be used as long as it serves as an etching mask.

【0010】さらにエッチングマスクの除去は必ずしも
必要ではなく、エッチングマスクを介して層間絶縁膜の
上層に画素電極を形成する事も可能である。この場合エ
ッチングマスク剥離工程の削除を伴うので、第二層間絶
縁膜へのダメージを更に低減できる。またエッチングマ
スクのパターニング後、フォトレジストの剥離を行うと
第二層間絶縁膜104のエッチング時に、エッチングマ
スクがエッチングガスに曝されてダメージを受け易くな
るため、前記フォトレジストは剥離しないまま第二層間
絶縁膜のエッチングを行うのが望ましい。
Further, it is not always necessary to remove the etching mask, and it is possible to form a pixel electrode on the upper layer of the interlayer insulating film through the etching mask. In this case, the etching mask stripping step is deleted, so that damage to the second interlayer insulating film can be further reduced. Further, if the photoresist is peeled off after patterning the etching mask, the etching mask is exposed to the etching gas and is easily damaged when the second interlayer insulating film 104 is etched. It is desirable to etch the insulating film.

【0011】また画素電極も例えばアルミニウムが使え
るなどITOには限らない。
The pixel electrode is not limited to ITO, for example, aluminum can be used.

【0012】以上が本発明の実施例であるが、シール部
110には比較的水分の侵入経路となりやすい有機樹脂
を用いた第二層間絶縁膜104が形成されていない。従
って第二層間絶縁膜104を経路として液晶層に水分が
侵入する事は防げ、結果として液晶の劣化を防止でき
る。
Although the embodiment of the present invention has been described above, the second interlayer insulating film 104 made of an organic resin, which is relatively easy to become a moisture entry path, is not formed in the seal portion 110. Therefore, it is possible to prevent water from entering the liquid crystal layer through the second interlayer insulating film 104 as a route, and as a result, it is possible to prevent deterioration of the liquid crystal.

【0013】同時にドライバー103はシール部110
より内側である画素表示部側にあるためわざわざドライ
バー用のスペースを確保する必要がなく省スペース化が
はかれる。さらにドライバー103上の第二層間絶縁膜
104を除去せずに済むためドライバーはエッチングに
よるダメージを受けない。また従来の構造では最終的に
ポリイミドからなるドライバー保護膜114を形成して
ドライバーを封止する必要があったが本発明を用いると
すでに第二層間絶縁膜104で覆われているのでさらな
る封止は不必要となる。
At the same time, the driver 103 has a seal portion 110.
Since it is located on the inner side of the pixel display section, it is not necessary to bother to secure a space for the driver, and space can be saved. Furthermore, since the second interlayer insulating film 104 on the driver 103 does not have to be removed, the driver is not damaged by etching. Further, in the conventional structure, it was necessary to finally form the driver protective film 114 made of polyimide to seal the driver. However, when the present invention is used, the driver protective film 114 is already covered with the second interlayer insulating film 104, so that further sealing is performed. Is unnecessary.

【0014】またITOなどの導電性薄膜であるシール
ド112がドライバー上の第二層間絶縁膜104上に存
在するため外部電場によるドライバーの信頼性低下を招
かない。同時に対向基板上のシールド112に対応する
位置には対向電極を形成しない事によりシールド112
近辺の電界強度は格段に低下する。よってドライバー1
03は外部電場を受けにくくなる。
Since the shield 112, which is a conductive thin film such as ITO, is present on the second interlayer insulating film 104 on the driver, the reliability of the driver is not deteriorated by an external electric field. At the same time, by forming no counter electrode at a position corresponding to the shield 112 on the counter substrate, the shield 112
The electric field strength in the vicinity is significantly reduced. So driver 1
03 becomes hard to receive an external electric field.

【0015】[0015]

【発明の効果】本発明を用いれば、ドライバーはシール
部よりも画素表示部寄りにあるため省スペース化が図れ
る。またドライバー上には画素部と共に同じ膜厚の層間
絶縁膜を形成するのでドライバーに液晶が直接触れる事
が無くドライバーが液晶封入部にあっても信頼性の低下
は防げる。
According to the present invention, since the driver is closer to the pixel display portion than the seal portion, space can be saved. Further, since the interlayer insulating film having the same film thickness is formed on the driver together with the pixel portion, the liquid crystal does not come into direct contact with the driver, so that the reliability can be prevented from being lowered even when the driver is in the liquid crystal sealed portion.

【0016】またドライバーは層間絶縁膜上の導電性薄
膜にも保護されているため、外部電場による悪影響も低
減できる。
Since the driver is also protected by the conductive thin film on the interlayer insulating film, the adverse effect of the external electric field can be reduced.

【図面の簡単な説明】[Brief description of drawings]

【図1】 実施例記載の液晶表示装置の平面図。FIG. 1 is a plan view of a liquid crystal display device described in an embodiment.

【図2】 実施例記載の液晶表示装置のA−A’間に於
ける断面図。
FIG. 2 is a cross-sectional view taken along the line AA ′ of the liquid crystal display device described in the embodiment.

【図3】 実施例の工程を表す断面図。FIG. 3 is a cross-sectional view showing a process of an example.

【図4】 従来例の液晶表示装置の断面図。FIG. 4 is a cross-sectional view of a conventional liquid crystal display device.

【符号の説明】[Explanation of symbols]

101 ガラス基板 102 画素TFT 103 ドライバー 104 第二層間絶縁膜 105 エッチングマスク 106 画素電極 107 対向基板 108 接着剤 109 対向電極 110 シール部 111 画素部 112 シールド 113 第一層間絶縁膜 114 ドライバー保護膜 101 glass substrate 102 pixel TFT 103 driver 104 second interlayer insulating film 105 etching mask 106 pixel electrode 107 counter substrate 108 adhesive 109 counter electrode 110 seal part 111 pixel part 112 shield 113 first interlayer insulating film 114 driver protective film

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 ドライバー内蔵アクティブマトリクス方
式の液晶表示装置において、アクティブマトリクス基板
はゲート配線とソース配線を層間分離する第一の層間絶
縁膜と、ソース配線と画素電極を層間分離する第二の層
間絶縁膜とを備え、ドライバーを対向する2枚の基板の
接着部よりも画素表示部寄り配置することと、少なくと
も第二の層間絶縁膜は前記ドライバー上にも形成する事
と、少なくとも第二の層間絶縁膜は対向基板との接着部
及びその外周には形成しない事と、前記ドライバー上の
層間絶縁膜上には他の配線などと導通をとらず浮遊電位
としたITOなどの導電性薄膜を形成することと、対向
する基板のドライバーに対応する位置には対向電極であ
る導電性薄膜を形成しない事を特徴とする液晶表示装
置。
1. In an active matrix type liquid crystal display device with a built-in driver, an active matrix substrate comprises a first interlayer insulating film for separating a gate wiring and a source wiring from each other and a second interlayer insulating film to separate a source wiring and a pixel electrode from each other. An insulating film, and arranging the driver closer to the pixel display part than the adhesive part of the two substrates facing each other; forming at least the second interlayer insulating film also on the driver; The interlayer insulating film should not be formed on the bonding portion with the opposite substrate and its outer periphery, and a conductive thin film such as ITO having a floating potential without being electrically connected to other wirings should be formed on the interlayer insulating film on the driver. A liquid crystal display device characterized by being formed and not forming a conductive thin film which is a counter electrode at a position corresponding to a driver on a counter substrate.
【請求項2】 請求項1において第二の層間絶縁膜はポ
リイミド樹脂、ポリイミドアミド樹脂、ポリアミド樹脂
などの有機樹脂からなる事を特徴とする液晶表示装置。
2. The liquid crystal display device according to claim 1, wherein the second interlayer insulating film is made of an organic resin such as polyimide resin, polyimideamide resin, or polyamide resin.
JP4145593A 1993-03-02 1993-03-02 Liquid crystal display device Pending JPH06258659A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4145593A JPH06258659A (en) 1993-03-02 1993-03-02 Liquid crystal display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4145593A JPH06258659A (en) 1993-03-02 1993-03-02 Liquid crystal display device

Publications (1)

Publication Number Publication Date
JPH06258659A true JPH06258659A (en) 1994-09-16

Family

ID=12608855

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4145593A Pending JPH06258659A (en) 1993-03-02 1993-03-02 Liquid crystal display device

Country Status (1)

Country Link
JP (1) JPH06258659A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6246454B1 (en) 1995-12-19 2001-06-12 Semiconductor Energy Laboratory Co., Ltd. Active matrix liquid crystal display and method of fabricating same
JP2003202589A (en) * 2001-12-28 2003-07-18 Fujitsu Display Technologies Corp Liquid crystal display device and its manufacturing method
US6859247B2 (en) 2000-09-29 2005-02-22 Seiko Epson Corporation Electro-optical apparatus and projection-type display apparatus
US6952020B1 (en) * 1999-07-06 2005-10-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7023518B1 (en) * 1995-12-19 2006-04-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a non-conductive material or a weakly conductive material applied to a side edge of a substrate and a method of fabricating the same
US7158205B2 (en) 1996-10-22 2007-01-02 Seiko Epson Corporation Liquid crystal panel substrate, liquid crystal panel, and electronic device and projection display device using the same
US7215402B2 (en) 1996-06-25 2007-05-08 Semiconductor Energy Laboratory Co., Ltd. Electronic device having liquid crystal display device
JP2008165255A (en) * 2008-03-26 2008-07-17 Semiconductor Energy Lab Co Ltd Liquid crystal display device
US7872728B1 (en) 1996-10-22 2011-01-18 Seiko Epson Corporation Liquid crystal panel substrate, liquid crystal panel, and electronic device and projection display device using the same
US8665411B2 (en) 1995-12-21 2014-03-04 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device having particular conductive layer

Cited By (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7046312B2 (en) 1995-12-19 2006-05-16 Semiconductor Energy Laboratory Co., Ltd. Active matrix liquid crystal display and method of fabricating same
US6246454B1 (en) 1995-12-19 2001-06-12 Semiconductor Energy Laboratory Co., Ltd. Active matrix liquid crystal display and method of fabricating same
US7023518B1 (en) * 1995-12-19 2006-04-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a non-conductive material or a weakly conductive material applied to a side edge of a substrate and a method of fabricating the same
US9316880B2 (en) 1995-12-21 2016-04-19 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US8665411B2 (en) 1995-12-21 2014-03-04 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device having particular conductive layer
US7215402B2 (en) 1996-06-25 2007-05-08 Semiconductor Energy Laboratory Co., Ltd. Electronic device having liquid crystal display device
US8665409B2 (en) 1996-06-25 2014-03-04 Semiconductor Energy Laboratory Co., Ltd. Display device with sealing material
US9507213B2 (en) 1996-06-25 2016-11-29 Semiconductor Energy Laboratory Co., Ltd. Electronic device having liquid crystal display device
US7474376B2 (en) 1996-06-25 2009-01-06 Semiconductor Energy Laboratory Co., Ltd. Display device
US8643820B2 (en) 1996-06-25 2014-02-04 Semiconductor Energy Laboratory Co., Ltd. Electronic device having liquid crystal display device
US7333160B2 (en) 1996-06-25 2008-02-19 Semiconductor Energy Laboratory Co., Ltd. Display device including resin film
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