JPH06244524A - Semiconductor device - Google Patents

Abstract

PURPOSE:To increase the versatility of a semiconductor package by a method wherein a third member is interposed and inserted between a board and the semiconductor package and a gap is formed between both. CONSTITUTION:A prescribed position on the face which is faced with a board 3 of a semiconductor package 6 is coated with, e.g. a substance in which a granular substance 9 in a prescribed amount has been mixed with an adhesive 8, and the semiconductor package 6 is arranged on the board 3 in such a way that outer leads 7 come into contact with prescribed positions on lands 4. Then, when the semiconductor package 6 is pressed to the board 3, the granular substance 9 is put in order via the adhesive 8, and the board 3 and the semiconductor package 6 form a gap by the granular substance 9 and are bonded by the adhesive 8. The gap which is formed between the board 3 and the semiconductor package 6 contributes toward absorbing the warp and the surface unevenness of the semiconductor package 6 and the board 3 or toward increasing the degree of freedom of the mounting operation of the outer leads 7. Thereby, the versatility of the semiconductor package 6 can be increased.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device in which a semiconductor package is mounted with a gap formed on a substrate.

[0002]

2. Description of the Related Art FIG. 4 is a side view showing a mounted state of a conventional semiconductor device. In the figure, 1 is a semiconductor package sealed with a synthetic resin, which is TCP (Tape Carrier Package)
Type semiconductor device. 1a is a protrusion formed on the surface of the semiconductor package 1 on the mounting side, 2 is an external lead of the semiconductor package 1, 3 is a substrate, 4 is a land formed on the substrate 3,
Reference numeral 5 is an insulating coat applied to the wiring of the substrate 3 and the periphery of the land 4.

Next, the operation will be described. The TCP semiconductor package 1 forms a protrusion 1a when resin-sealed with a synthetic resin by an injection molding method, and the external lead 2 is bent and molded into a predetermined shape at the delivery destination. Therefore, the molding die is configured so as to form the protrusion 1a when the resin is sealed. Then, a gap of 0.1 mm to 0.3 mm is formed between the substrate 3 and the semiconductor package 1 by the protrusion 1a, flux is applied to the external lead 2 and the land 4, and the external lead 2 and the land 4 are soldered or the like. And are connected. As described above, when the gap is formed between the substrate 3 and the semiconductor package 1 by the protrusion 1a formed on the semiconductor package 1, when the flux is removed by cleaning, the flux sneaking around the back surface of the semiconductor package 1 is removed. Easy, and can absorb warpage and surface irregularities of the semiconductor package 1 and the substrate 3,
Further, by increasing the length of the external lead 2 by the gap, the external lead 1a can be mounted when the semiconductor package 1 is mounted.
The degree of freedom with respect to the deformation of itself can be improved. By the way, since the semiconductor package 1 made of TCP has no particular restrictions on the lead molding size and shape, and the user can freely select the shape, the height of the protrusion 1a
Resin molding is performed according to the size, position, etc. of the user's request.

[0004]

The conventional semiconductor device is constructed as described above, and the projection 1a of the semiconductor package 1 is formed.
Is different depending on the user, so that a semiconductor maker needs different molds to change the height, size, and position of the protrusion 1a for each user, which makes it difficult to increase the versatility of the semiconductor package 1. was there.

The present invention has been made to solve the above problems, and a gap is formed between a semiconductor package and a substrate without forming a protrusion on the semiconductor package,
An object of the present invention is to obtain a semiconductor device that can improve the versatility of a semiconductor package.

[0006]

A semiconductor device according to a first aspect of the present invention is such that a third member is interposed between a substrate and a semiconductor package to form a predetermined gap therebetween. . A semiconductor device according to a second aspect of the present invention is such that a granular body is arranged between a substrate and a semiconductor package via an adhesive to form a predetermined gap therebetween. Further, a semiconductor device according to a third aspect of the present invention is such that a plate-like member having a predetermined thickness is arranged between the substrate and the semiconductor package and a predetermined gap is formed therebetween. A semiconductor device according to a fourth aspect of the present invention is such that a protrusion is formed on the substrate and a predetermined gap is formed between the two.

[0007]

The third aspect of the semiconductor device according to the first aspect of the present invention
Member, the granular body arranged via the adhesive of the semiconductor device according to claim 2 of the present invention, the plate-like member of the semiconductor device according to claim 3 of the present invention, and the claim 4 of the present invention. The protrusions formed on the substrate of the semiconductor device in 1) form a predetermined gap with the semiconductor package.

[0008]

EXAMPLES Example 1. Embodiments of the present invention will be described below with reference to the drawings. 1 is a side view showing a mounted state of a semiconductor device according to a first embodiment of the present invention. In the figure, 3 to
Since 5 is the same as the conventional one, its explanation is omitted. Reference numeral 6 denotes a resin-sealed semiconductor package, the surface of which faces the substrate 3 is formed flat. Reference numeral 7 is an external lead of the semiconductor package 6, 8 is an adhesive agent interposed between the semiconductor package 6 and the substrate 3, and 9 is 0.1 to 0.1 which is disposed via the adhesive agent 8.
It is a spherical granular material having a diameter of 0.3 mm and is made of, for example, a synthetic resin.

Next, the operation will be described. A mixture of a predetermined amount of the granular material 9 in the adhesive 8 is applied to a predetermined position on the surface of the semiconductor package 6 facing the substrate 3 so that the external lead 7 contacts the predetermined position of the land 4. When the semiconductor package 6 is placed on the substrate 3 and the semiconductor package 6 is pressed against the substrate 3, the particles 9 are aligned with the adhesive 8, and the substrate 3 and the semiconductor package 6 form a gap by the particles 9. It is adhered with an adhesive 8. Then, after applying flux to the external leads 7 and the lands 4,
The external lead 7 and the land 4 are connected by solder or the like. The gap formed between the substrate 3 and the semiconductor package 6 is
As in the conventional case, it contributes to facilitating cleaning of the flux, absorbing warpage and surface irregularities of the semiconductor package 6 and the substrate 3, increasing the degree of freedom in mounting the external leads 7, and the like.

Embodiment 2. In the first embodiment, the adhesive 8 mixed with the particles 9 is applied to the semiconductor package 6. However, the adhesive 8 having the particles 9 is applied to the position where the semiconductor package 6 is mounted on the substrate 3 to apply the particles 8. Even if the bodies 9 are arranged and a gap is formed between the body 9 and the semiconductor package 6, the same effect as that of the first embodiment is exhibited.

Embodiment 3. By selecting the diameter of the granular body 9 in the above-described first and second embodiments, a gap corresponding to the granular body 9 can be formed between the semiconductor package 6 and the substrate 3, which is the same as the above-described exemplary embodiment. Be effective.

Embodiment 4. If the granular material 9 forming the gap in each of the above-mentioned embodiments is made of a metal material having a high thermal conductivity such as alumina, the same effects as those in the above-mentioned embodiments can be obtained and the semiconductor package can be obtained. The heat dissipation of 6 can be improved.

Embodiment 5. Second Embodiment FIG. 2 is a side view showing a mounted state of a semiconductor package according to a fifth embodiment of the present invention. In the figure, reference numerals 3 to 7 are the same as those in FIG. Reference numeral 3a is a protrusion formed on the substrate 3. For example, when the substrate 3 is manufactured, the insulating coat 5 is applied to a predetermined position where the semiconductor package 6 is to be arranged between the lands 4 and 4. By forming the protrusions 3a with the protrusions 3a, a predetermined gap can be formed between the substrate 3 and the semiconductor package 6, and the same effect as that of the above-described embodiment is exhibited.

Example 6. In the fifth embodiment, the insulating coat 5 is applied on the substrate 3 to a predetermined thickness to form the protrusions 3a. For example, a wiring pattern on the substrate 3 (not shown)
By partially plating the protrusions 3a on the upper side to form the protrusions 3a, a predetermined gap can be formed between the substrate 3 and the semiconductor package 6, and the same effect as that of the above embodiment can be obtained. Demonstrate.

Example 7. Third Embodiment FIG. 3 is a side view showing a mounted state of a semiconductor device according to a seventh embodiment of the present invention. In the figure, reference numerals 3 to 7 are the same as those in FIG. Reference numeral 10 denotes a plate-shaped member arranged between the semiconductor package 6 and the substrate 3, which is formed of a synthetic resin film or a metal plate having a thickness of 0.1 to 0.3 mm and is attached to either the semiconductor package 1 or the substrate 3 with an adhesive. A predetermined gap can be formed between the substrate 3 and the semiconductor package 6 by forming the gap, and the same effect as that of the above-described embodiment is exhibited.

Example 8. Although the case where the plate-shaped member 10 is formed of one sheet has been described in the above-described Example 7, even if a plurality of sheets are stacked in accordance with the gap forming the thin plate-shaped member,
The same effect as that of the above-mentioned Example 7 is exhibited.

[0017]

As described above, according to the first aspect of the present invention, the third member is interposed between the semiconductor package and the substrate to form a predetermined gap therebetween, and the present invention is also provided. According to the second aspect of the present invention, a granular body that forms a predetermined gap is disposed between the semiconductor package and the substrate via an adhesive to form a predetermined gap therebetween, and the present invention According to claim 3, a plate-like member that forms a predetermined gap with the semiconductor package is arranged on the substrate to form a predetermined gap therebetween, and according to claim 4 of the present invention, the substrate Since the projections are formed on the base to form a predetermined gap between the two, the versatility of the semiconductor package is improved.

[Brief description of drawings]

FIG. 1 is a side view showing a mounted state of a semiconductor package of a semiconductor device according to a first embodiment of the present invention.

FIG. 2 is a side view showing a mounted state of a semiconductor package of a semiconductor device according to a fifth embodiment of the present invention.

FIG. 3 is a side view showing a mounted state of a semiconductor package of a semiconductor device according to a seventh embodiment of the present invention.

FIG. 4 is a side view showing a mounted state of a semiconductor package of a conventional semiconductor device.

[Explanation of symbols]

 3 substrate 6 semiconductor package 7 external lead 8 adhesive 9 granular material

Claims (4)

[Claims] 1. In a semiconductor device in which a semiconductor package is mounted with a predetermined gap formed on a substrate, a third member is inserted between the substrate and the semiconductor package to form the predetermined gap. A semiconductor device characterized by: 2. The semiconductor device according to claim 1, wherein the third member is a granular body arranged via an adhesive. 3. The semiconductor device according to claim 1, wherein the third member is a plate-shaped member having a predetermined thickness. 4. A semiconductor device in which a semiconductor package is mounted with a predetermined gap formed on a substrate, wherein a protrusion is formed on the substrate to form a predetermined gap between the semiconductor package and the substrate. Characteristic semiconductor device.