JP4585147B2 - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
JP4585147B2
JP4585147B2 JP2001179974A JP2001179974A JP4585147B2 JP 4585147 B2 JP4585147 B2 JP 4585147B2 JP 2001179974 A JP2001179974 A JP 2001179974A JP 2001179974 A JP2001179974 A JP 2001179974A JP 4585147 B2 JP4585147 B2 JP 4585147B2
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heat spreader
spreader plate
semiconductor device
semiconductor element
semiconductor
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JP2002373956A (en
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健仁 稲葉
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Renesas Electronics Corp
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Renesas Electronics Corp
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Die Bonding (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Description

【０００１】
【発明の属する技術分野】
本発明は半導体装置に係り、特にヒートスプレッダー板に直接半導体素子を接着剤で接着して搭載し、樹脂により半導体素子をモールドした半導体装置に関する。
【０００２】
【従来の技術】
図５は従来技術のヒートスプレッダー板３０を示す図であり、（Ａ）は平面図、（Ｂ）は（Ａ）のＢ−Ｂ部の断面図である。ヒートスプレッダー板３０の半導体素子搭載面３１は平坦面になっている。
【０００３】
尚、ヒートスプレッダー板とは、搭載した半導体素子に発生した熱を拡散して外部に放出する銅系、アルミ系、Ｆｅ系等の金属板またはアルミナ、ＳｉＣ等のセラミック板のことであり、このようなヒートスプレッダー板は、例えば特開平１１−７４４１７号公報あるいは特開２０００−３２３６１０号公報等に開示されている。
【０００４】
このように従来技術のヒートスプレッダー板３０の半導体素子搭載面３１は平坦面になっているから、図６に示すように、半導体素子１３を半導体素子搭載面３１にマウント材１４により被着搭載した場合、搭載時にはみ出したマウント材１４がヒートスプレッダー板上に塗れ広がり、すなわちマウント材の露出部であるブリード（にじみ出し）１４Ｂが広くなる。
【０００５】
そしてこの後で形成される封止樹脂はマウント材と密着性が悪いから、このようにマウント材の露出部１４Ｂが広く設けられてしまうと封止樹脂の剥離等の不都合を生じる。
【０００６】
このように、図５に示すようなヒートスプレッダーを備えたモールドパッケージの半導体装置では、樹脂封止後にマウント材が塗れ広がった箇所から封止樹脂が剥離し、この剥離がリフロー時にヒートスプレッダー板全面に拡大するというパッケージ信頼性上の問題があった。
【０００７】
【発明が解決しようとする課題】
以上説明したように従来技術のヒートスプレッダー板の半導体素子搭載部は平滑な平面であるため、半導体素子搭載時にはみ出したマウント材がヒートスプレッダー板上に塗れ広がり、封止樹脂との密着性が悪いマウント材の露出部が広い面積で発生し、マウント材が塗れ広がった箇所から封止樹脂が剥離し、この剥離がリフロー時にヒートスプレッダー板全面に進行するというＰＫＧ信頼性上の問題があった。
したがって本発明の目的は、半導体素子搭載時におけるマウント材のはみ出し（ブリード）を抑制することができるヒートスプレッダー板を有する半導体装置を提供することである。
【０００８】
【課題を解決するための手段】
本発明によれば、
ヒートスプレッダー板と、
前記ヒートスプレッダー板に設けられたリードフレームと、
前記ヒートスプレッダー板にマウント材で接着して直接搭載されており、樹脂により封止された半導体素子と、を備え、
前記ヒートスプレッダー板の前記半導体素子を搭載する面に、上面視において、少なくとも前記半導体素子の外側に同心四角形状に複数の凹凸が形成されている、半導体装置が提供される。
【０００９】
また、本発明によれば、
ヒートスプレッダー板と、
前記ヒートスプレッダー板に設けられたインターポーザーと、
前記ヒートスプレッダー板にマウント材で接着して直接搭載されており、樹脂により封止された半導体素子と、を備え、
前記ヒートスプレッダー板の前記半導体素子を搭載する面に、上面視において、少なくとも前記半導体素子の外側に同心四角形状に複数の凹凸が形成されている、半導体装置が提供される。
【００１０】
このように上記それぞれの半導体装置では、ヒートスプレッダー板の半導体素子を搭載する面に凹凸が形成されているから、素子搭載時のマウント材の広がり（ブリード）を抑制することが可能となり、これにより封止樹脂の剥離を阻止して信頼性の高い半導体装置を得ることができる。
【００１１】
さらにこの凹凸は互いに同心的に配置した複数の直角四角形状で形成されている。したがって、直角四角形状の半導体素子（半導体チップ）の各辺からの状態が一様となって広がりの制御が容易になる。
【００１２】
すなわち、半導体素子の中心を同心四角形状の凹凸の中心と一致するように半導体素子を接着すれば、半導体素子の各周辺箇所からの広がりを一様に最小限に止めることができる。ここで、凹部を同心的に形成しないで、例えば放射状またはそれに類似の形状に形成するとマウント材の広がりを促進することになり逆効果となる。
【００１３】
ここで、塗れ広がりを小さくするためにはピッチを細かくした方が好ましいが、ピッチを細かくし過ぎると刻印パンチ加工が困難となり、ヒートスプレッダー板のゆがみが大きくなる懸念が生じるから、凹凸のピッチは０．３ｍｍ以上であることが好ましい。
【００１４】
一方、ピッチが大き過ぎると半導体素子（半導体チップ）のサイズによっては、塗れ広がりを防止する機能がはたせなくなる。したがって、凹凸のピッチは１．０ｍｍ以下であることが好ましい。
【００１５】
また、凹の深さ（凸部上面から凹部底面までの寸法）が浅いと本発明の溝としての機能が無くなるから、５．０μｍ以上の深さであることが好ましい。
【００１６】
一方、深さが深すぎるとヒートスプレッダー板がゆがみが問題となる懸念が生じるから、２０．０μｍ以下の深さであることが好ましい。
【００１７】
【発明の実施の形態】
以下図面を参照して本発明を説明する。図２は本発明の実施の形態におけるヒートスプレッダー板を示す図であり、（Ａ）は平面図、（Ｂ）は（Ａ）のＢ−Ｂ部の断面図である。図１は図２のヒートスプレッダー板を用いた場合の半導体素子搭載時を示す断面図である。
【００１８】
先ず図２を参照して、銅板からなり表裏側面にニッケルメッキ等の防錆処理が施されたヒートスプレッダー板１０の半導体素子を搭載する素子搭載面１１の全面に、同心的に複数の直角四角形状に複数の凹部１２，凸部１１Ａが形成されている。
【００１９】
すなわち、凹部１２に対応する断面楔型であり図２（Ａ）の凹部１２と同様な平面形状の複数の同心直角四角形状の鋼鉄製のプレス治具を銅板表面に加圧することにより、複数の同心四角形状の凹部１２を形成し、その間の素子搭載面１１の箇所が凸部１１Ａとなっている。
【００２０】
全面にニッケルメッキを施された銅板表面に、このようなプレス加工を行ないヒートスプレッダー板１０となる。
【００２１】
次に、図１を参照して、ヒートスプレッダー板１０の半導体素子を搭載する素子搭載面１１の全面に形成された凹凸のピッチｐ、すなわち凹部１２となるプレス刻印１２のピッチｐは０．３ｍｍ以上、１０．０ｍｍ以下となっている。
【００２２】
また、凸部１１Ａとなる素子搭載面１１の箇所１１Ａから凹部（刻印）１２の底まで、すなわち凹部（刻印）１２の深さｔは５．０μｍ以上、２０．０μｍ以下となっている。
【００２３】
この同心的に配列の複数の凹凸形状１２、１１Ａの中心と半導体素子１３の中心とを一致させて、半導体素子１３を銀ペーストあるいは絶縁ペースト等のマウント材１４でヒートスプレッダー板１０の素子搭載面１１に直接接着して搭載されている。尚、絶縁ペーストは例えばエポキシ系接着材にガラスフィラーやセラミックフィラーを充填したペーストである。
【００２４】
このように本発明では、ヒートスプレッダー板の半導体素子搭載面側に、プレス加工により０．３ｍｍ〜１．０ｍｍピッチで同心四角形の刻印１２が施こされているから、図１に示すように、半導体素子搭載時にはみ出したマウント材１４の塗れ広がり量（投影面積）１４Ａ、すなわちマウント材のブリード（塗れ広がり、にじみ出し）１４Ａが狭くなり、これによりこの後の工程で形成される封止樹脂との密着性が悪いマウント材の露出部の面積が減少し、ＰＫＧ信頼性が向上する。
図３は図１および図２に示すヒートスプレッダー板１０をＱＦＰまたはＳＯＰのモールドパッケージの半導体装置に適用した一例を示す断面図である。
【００２５】
ヒートスプレッダー板１０の凹凸を全面に形成した素子搭載面１１に、同心的に配列の複数の凹凸形状１２、１１Ａの中心と半導体素子１３の中心とを一致させて、半導体素子１３を銀ペーストあるいは絶縁ペースト等のマウント材１４で直接接着している。
【００２６】
また、リードフレーム１９のインナーリードを素子搭載面１１に、例えば、ポリイミドテープ基材の両面に熱硬化性接着材や熱可塑性接着材を塗布した接着テープ１５により接着している。
【００２７】
半導体素子の電極とインナーリードの先端をボンディングワイヤー１７で接続し、接着テープ１５と反対側のモールド部分の外側に位置するリードフレームの箇所に樹脂漏れ防止テープ１６を張り付け、半導体素子１３、インナーリード、ボンディングワイヤー１７等を封止樹脂１８でモールドされている。
【００２８】
このような半導体装置では、刻印により形成された同心矩形状の凹凸によりクサビ効果が得られるためマウント材１４のブリードが狭くなり、これにより封止樹脂１８の剥離が防止できるだけではなく、同心矩形状の凹凸１２、１１Ａによるクサビ効果により接着テープ１５、マウント材１４および封止樹脂１８とヒートスプレッダー板１０との界面の密着性も向上する。
【００２９】
図４は図１および図２に示すヒートスプレッダー板１０をプリント基板またはＴＡＢテープのインターポーザーを有し、モールド型のＢＧＡパッケージの半導体装置に適用した一例を示す断面図である。
【００３０】
ヒートスプレッダー板１０の凹凸を全面に形成した素子搭載面１１に、同心的に配列の複数の凹凸形状１２、１１Ａの中心と半導体素子１３の中心とを一致させて、半導体素子１３を銀ペーストあるいは絶縁ペースト等のマウント材１４で直接接着している。
【００３１】
また、プリント基板またはＴＡＢテープ等のインターポーザー２１を素子搭載面１１に、例えば、ポリイミドテープ基材の両面に熱硬化性接着材や熱可塑性接着材を塗布した接着テープ１５により接着している。
【００３２】
そして、インターポーザー２１の他方の面（図で下面）には複数の半田ボール２９の電極が設けられ、インターポーザー１１の配線の先端と半導体素子の電極とをボンディングワイヤー１７で接続し、半導体素子１３、インターポーザー２１の半導体素子側の部分、ボンディングワイヤー１７等を封止樹脂１８でモールドされている。
【００３３】
このような半導体装置では、図３と同様に、刻印により形成された同心矩形状の凹凸によりクサビ効果が得られるためマウント材１４のブリードが狭くなり、これにより封止樹脂１８との密着性が向上して封止樹脂１８の剥離を防止することができるだけではなく、同心矩形状の凹凸１２、１１Ａによるクサビ効果により接着テープ１５、マウント材１４および封止樹脂１８とヒートスプレッダー板１０との界面の密着性も向上する。
【００３４】
【発明の効果】
以上説明したように本発明によれば、同心矩形状に刻印された凹凸により、半導体素子搭載時にはみ出したマウント材の塗れ広がり量（投影面積）が減少するため、封止樹脂との密着性が悪いマウント材の露出部の面積が減少し、ＰＫＧ信頼性が向上する。
【００３５】
また、ヒートスプレッダー板に同心矩形状に凹凸が形成されているので、ヒートスプレッダー板とマウント材の界面でクサビ効果が得られ、ヒートスプレッダー板界面とマウント材界面の密着性が向上する。
【００３６】
また、ヒートスプレッダー板に同心矩形状に凹凸が形成されているので、ヒートスプレッダー板と封止樹脂材の界面でクサビ効果が得られ、ヒートスプレッダー板界面と封止樹脂材界面の密着性が向上する。
【００３７】
さらに、ヒートスプレッダー板に同心矩形状に凹凸が形成されているので、ヒートスプレッダー板と接着テープの界面でクサビ効果が得られ、ヒートスプレッダー板界面と接着テープ界面の密着性が向上する。
【図面の簡単な説明】
【図１】本発明の実施の形態におけるヒートスプレッダー板を用いた場合の半導体素子搭載時を示す断面図である。
【図２】本発明の実施の形態におけるヒートスプレッダー板を示す図であり、（Ａ）は平面図、（Ｂ）は（Ａ）のＢ−Ｂ部の断面図である。
【図３】本発明の実施の形態のヒートスプレッダー板を用いた半導体装置を示す断面図である。
【図４】本発明の実施の形態のヒートスプレッダー板を用いた他の半導体装置を示す断面図である。
【図５】従来技術のヒートスプレッダー板を示す図であり、（Ａ）は平面図、（Ｂ）は（Ａ）のＢ−Ｂ部の断面図である。
【図６】図５のヒートスプレッダー板を用いた場合の半導体素子搭載時を示す断面図である。
【符号の説明】
１０ ヒートスプレッダー板
１１ 素子搭載面
１１Ａ 凸部（刻印）
１２ 凹部
１３ 半導体素子
１４ マウント材
１４Ａ 本発明のヒートスプレッダー板によるマウント材のブリード
１４Ｂ 従来技術のヒートスプレッダー板によるマウント材のブリード
１５ 接着テープ
１６ 樹脂漏れ防止テープ
１７ ボンディングワイヤー
１８ 封止樹脂
２１ インターポーザー
２９ 半田ボール
３０ ヒートスプレッダー板
３１ 半導体素子搭載面[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a semiconductor device, and more particularly to a semiconductor device in which a semiconductor element is directly mounted on a heat spreader plate with an adhesive and the semiconductor element is molded with a resin.
[0002]
[Prior art]
5A and 5B are diagrams showing a heat spreader plate 30 of the prior art, in which FIG. 5A is a plan view and FIG. 5B is a cross-sectional view taken along the line BB in FIG. The semiconductor element mounting surface 31 of the heat spreader plate 30 is a flat surface.
[0003]
The heat spreader plate is a copper-based, aluminum-based or Fe-based metal plate or a ceramic plate such as alumina or SiC that diffuses heat generated in the mounted semiconductor element and releases it to the outside. Such a heat spreader plate is disclosed in, for example, Japanese Patent Application Laid-Open No. 11-74417 or Japanese Patent Application Laid-Open No. 2000-323610.
[0004]
As described above, since the semiconductor element mounting surface 31 of the heat spreader plate 30 of the prior art is a flat surface, the semiconductor element 13 is attached and mounted on the semiconductor element mounting surface 31 with the mounting material 14 as shown in FIG. In this case, the mount material 14 that protrudes at the time of mounting spreads and spreads on the heat spreader plate, that is, the bleed 14B that is an exposed portion of the mount material becomes wider.
[0005]
Since the sealing resin formed thereafter has poor adhesion to the mount material, if the exposed portion 14B of the mount material is provided widely as described above, problems such as peeling of the sealing resin occur.
[0006]
Thus, in the mold package semiconductor device having the heat spreader as shown in FIG. 5, the sealing resin is peeled off from the portion where the mounting material is spread after the resin sealing, and this peeling is the entire surface of the heat spreader plate during reflow. There was a problem in the reliability of the package to expand to.
[0007]
[Problems to be solved by the invention]
As described above, since the semiconductor element mounting portion of the heat spreader plate of the prior art is a smooth flat surface, the mounting material protruding when the semiconductor element is mounted spreads on the heat spreader plate and has poor adhesion to the sealing resin. The exposed portion of the mount material is generated in a wide area, and the sealing resin is peeled off from the place where the mount material is spread and spread, and this peeling proceeds to the entire surface of the heat spreader plate at the time of reflow.
Accordingly, an object of the present invention is to provide a semiconductor device having a heat spreader plate capable of suppressing the protrusion (bleeding) of a mount material when a semiconductor element is mounted.
[0008]
[Means for Solving the Problems]
According to the present invention ,
A heat spreader plate;
A lead frame provided on said heat spreader plate,
It is mounted directly on the heat spreader plate by bonding with a mounting material, and includes a semiconductor element sealed with resin ,
Provided is a semiconductor device in which a plurality of concavities and convexities are formed in a concentric quadrangular shape on at least the outside of the semiconductor element, as viewed from above, on the surface on which the semiconductor element is mounted of the heat spreader plate .
[0009]
Moreover, according to the present invention ,
A heat spreader plate;
And interposer provided on the heat spreader plate,
It is mounted directly on the heat spreader plate by bonding with a mounting material, and includes a semiconductor element sealed with resin ,
Provided is a semiconductor device in which a plurality of concavities and convexities are formed in a concentric quadrangular shape on at least the outside of the semiconductor element, as viewed from above, on the surface on which the semiconductor element is mounted of the heat spreader plate .
[0010]
As described above, in each of the semiconductor devices, since the unevenness is formed on the surface of the heat spreader plate on which the semiconductor element is mounted, it is possible to suppress the spread (bleed) of the mounting material when the element is mounted. A highly reliable semiconductor device can be obtained by preventing peeling of the sealing resin.
[0011]
Further, the unevenness is formed in a plurality of right-angled squares arranged concentrically with each other. Therefore, the state from each side of the right-angled rectangular semiconductor element (semiconductor chip) becomes uniform, and the spread can be easily controlled.
[0012]
That is, if the semiconductor element is bonded so that the center of the semiconductor element coincides with the center of the concentric quadrangular irregularities, the spread of the semiconductor element from each peripheral portion can be uniformly minimized. Here, if the concave portions are not formed concentrically, for example, if they are formed in a radial shape or a similar shape, the spread of the mount material is promoted, which has an adverse effect.
[0013]
Here, in order to reduce the spread of spread, it is preferable to make the pitch fine.However, if the pitch is made too fine, the stamp punching process becomes difficult and the distortion of the heat spreader plate may be increased. It is preferable that it is 0.3 mm or more.
[0014]
On the other hand, if the pitch is too large, depending on the size of the semiconductor element (semiconductor chip), the function of preventing spreading can not be achieved. Therefore, it is preferable that the uneven pitch is 1.0 mm or less.
[0015]
Moreover, since the function as a groove | channel of this invention will be lose | eliminated if the depth (a dimension from a convex part upper surface to a recessed part bottom face) is shallow, it is preferable that it is a depth of 5.0 micrometers or more.
[0016]
On the other hand, if the depth is too deep, there is a concern that the heat spreader plate may be distorted, so that the depth is preferably 20.0 μm or less.
[0017]
DETAILED DESCRIPTION OF THE INVENTION
The present invention will be described below with reference to the drawings. 2A and 2B are views showing a heat spreader plate according to the embodiment of the present invention, in which FIG. 2A is a plan view and FIG. 2B is a cross-sectional view taken along line BB in FIG. FIG. 1 is a cross-sectional view showing a semiconductor device mounted when the heat spreader plate of FIG. 2 is used.
[0018]
First, referring to FIG. 2, a plurality of right-angled squares are concentrically formed on the entire surface of the element mounting surface 11 on which the semiconductor elements of the heat spreader plate 10 made of a copper plate and subjected to rust prevention treatment such as nickel plating on the front and back sides are mounted. A plurality of concave portions 12 and convex portions 11A are formed in the shape.
[0019]
That is, a plurality of concentric right-angled square steel pressing jigs having a wedge shape in cross section corresponding to the concave portion 12 and having the same planar shape as the concave portion 12 in FIG. Concentric quadrangular concave portions 12 are formed, and the portion of the element mounting surface 11 therebetween is a convex portion 11A.
[0020]
Such a pressing process is performed on the surface of the copper plate on which the entire surface is nickel-plated to form the heat spreader plate 10.
[0021]
Next, referring to FIG. 1, the pitch p of the unevenness formed on the entire surface of the element mounting surface 11 on which the semiconductor element of the heat spreader plate 10 is mounted, that is, the pitch p of the press mark 12 that becomes the recess 12 is 0.3 mm. Above, it is 10.0 mm or less.
[0022]
Further, the depth t of the concave portion (engraved) 12 from the portion 11A of the element mounting surface 11 serving as the convex portion 11A to the bottom of the concave portion (engraved) 12 is 5.0 μm or more and 20.0 μm or less.
[0023]
The element mounting surface of the heat spreader plate 10 is mounted with a mounting material 14 such as a silver paste or an insulating paste so that the centers of the concentrically arranged plurality of concave and convex shapes 12, 11A coincide with the centers of the semiconductor elements 13. 11 is directly bonded and mounted. The insulating paste is, for example, a paste in which an epoxy adhesive is filled with a glass filler or a ceramic filler.
[0024]
Thus, in the present invention, the concentric quadrangular marking 12 is applied to the semiconductor element mounting surface side of the heat spreader plate at a pitch of 0.3 mm to 1.0 mm by pressing, as shown in FIG. The amount of spread (projection area) 14A of the mount material 14 that protrudes when the semiconductor element is mounted, that is, the bleed (spread and spread) 14A of the mount material is narrowed. The area of the exposed portion of the mount material with poor adhesion is reduced, and the PKG reliability is improved.
FIG. 3 is a cross-sectional view showing an example in which the heat spreader plate 10 shown in FIGS. 1 and 2 is applied to a semiconductor device of a QFP or SOP mold package.
[0025]
On the element mounting surface 11 on which the unevenness of the heat spreader plate 10 is formed on the entire surface, the center of the plurality of uneven shapes 12, 11A arranged concentrically and the center of the semiconductor element 13 are aligned with each other, and the semiconductor element 13 is silver paste or It is directly bonded with a mounting material 14 such as an insulating paste.
[0026]
Further, the inner leads of the lead frame 19 are bonded to the element mounting surface 11 by, for example, an adhesive tape 15 in which a thermosetting adhesive or a thermoplastic adhesive is applied to both surfaces of a polyimide tape substrate.
[0027]
The electrode of the semiconductor element and the tip of the inner lead are connected by a bonding wire 17, and a resin leakage prevention tape 16 is pasted on the lead frame located outside the mold part opposite to the adhesive tape 15. The bonding wire 17 and the like are molded with a sealing resin 18.
[0028]
In such a semiconductor device, since the wedge effect is obtained by the concentric rectangular irregularities formed by engraving, the bleed of the mount material 14 becomes narrow, thereby not only preventing the peeling of the sealing resin 18 but also the concentric rectangular shape. Due to the wedge effect of the irregularities 12 and 11A, the adhesion of the interface between the adhesive tape 15, the mount material 14 and the sealing resin 18 and the heat spreader plate 10 is also improved.
[0029]
FIG. 4 is a sectional view showing an example in which the heat spreader plate 10 shown in FIGS. 1 and 2 is applied to a semiconductor device of a mold type BGA package having a printed circuit board or a TAB tape interposer.
[0030]
On the element mounting surface 11 on which the unevenness of the heat spreader plate 10 is formed on the entire surface, the center of the plurality of uneven shapes 12, 11A arranged concentrically and the center of the semiconductor element 13 are aligned with each other, and the semiconductor element 13 is silver paste or It is directly bonded with a mounting material 14 such as an insulating paste.
[0031]
Further, an interposer 21 such as a printed circuit board or a TAB tape is bonded to the element mounting surface 11 by, for example, an adhesive tape 15 in which a thermosetting adhesive or a thermoplastic adhesive is applied to both surfaces of a polyimide tape base material.
[0032]
The other surface (lower surface in the figure) of the interposer 21 is provided with electrodes of a plurality of solder balls 29, and the tip of the wiring of the interposer 11 and the electrode of the semiconductor element are connected by the bonding wire 17, and the semiconductor element 13. The semiconductor element side portion of the interposer 21, the bonding wire 17 and the like are molded with a sealing resin 18.
[0033]
In such a semiconductor device, as in FIG. 3, the wedge effect is obtained by the concentric rectangular irregularities formed by engraving, so that the bleed of the mount material 14 becomes narrow, and thereby the adhesion with the sealing resin 18 is reduced. Not only can the peeling of the sealing resin 18 be improved, but also the interface between the adhesive tape 15, the mounting material 14 and the sealing resin 18 and the heat spreader plate 10 due to the wedge effect caused by the concentric rectangular irregularities 12, 11A. The adhesion is improved.
[0034]
【The invention's effect】
As described above, according to the present invention, the unevenness engraved in a concentric rectangular shape reduces the spread amount (projected area) of the mount material protruding when the semiconductor element is mounted. The area of the exposed portion of the bad mount material is reduced, and the PKG reliability is improved.
[0035]
Further, since the concavity and convexity are formed in a concentric rectangular shape on the heat spreader plate, a wedge effect is obtained at the interface between the heat spreader plate and the mount material, and the adhesion between the heat spreader plate interface and the mount material interface is improved.
[0036]
In addition, because the heat spreader plate is formed with concentric rectangles, a wedge effect is obtained at the interface between the heat spreader plate and the sealing resin material, and the adhesion between the heat spreader plate interface and the sealing resin material interface is improved. To do.
[0037]
Furthermore, since the concavity and convexity are formed in a concentric rectangular shape on the heat spreader plate, a wedge effect is obtained at the interface between the heat spreader plate and the adhesive tape, and the adhesion between the heat spreader plate interface and the adhesive tape interface is improved.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view showing a state where a semiconductor element is mounted when a heat spreader plate according to an embodiment of the present invention is used.
2A and 2B are views showing a heat spreader plate according to an embodiment of the present invention, in which FIG. 2A is a plan view, and FIG. 2B is a cross-sectional view taken along a line BB in FIG.
FIG. 3 is a cross-sectional view showing a semiconductor device using a heat spreader plate according to an embodiment of the present invention.
FIG. 4 is a cross-sectional view showing another semiconductor device using the heat spreader plate according to the embodiment of the present invention.
5A and 5B are views showing a heat spreader plate according to the prior art, in which FIG. 5A is a plan view, and FIG. 5B is a cross-sectional view taken along a line BB in FIG.
6 is a cross-sectional view showing when the semiconductor element is mounted when the heat spreader plate of FIG. 5 is used.
[Explanation of symbols]
10 Heat spreader plate 11 Element mounting surface 11A Convex part (engraved)
DESCRIPTION OF SYMBOLS 12 Recess 13 Semiconductor element 14 Mounting material 14A Mounting material bleed 14B by heat spreader plate of the present invention Mounting material bleed 15 by conventional heat spreader plate Adhesive tape 16 Resin leakage prevention tape 17 Bonding wire 18 Sealing resin 21 Interposer 29 Solder balls 30 Heat spreader plate 31 Semiconductor element mounting surface

Claims (8)

ヒートスプレッダー板と、
前記ヒートスプレッダー板に設けられたリードフレームと、
前記ヒートスプレッダー板にマウント材で接着して直接搭載されており、樹脂により封止された半導体素子と、を備え、
前記ヒートスプレッダー板の前記半導体素子を搭載する面に、上面視において、少なくとも前記半導体素子の外側に同心四角形状に複数の凹凸が形成されている、半導体装置。 A heat spreader plate;
A lead frame provided on said heat spreader plate,
It is mounted directly on the heat spreader plate by bonding with a mounting material, and includes a semiconductor element sealed with resin ,
Wherein the surface for mounting the semiconductor element of the heat spreader plate, in top view, has a plurality of irregularities on concentric square shape on the outside of at least the semiconductor element is formed and a semiconductor device. 前記半導体装置のパッケージはＱＦＰまたはＳＯＰのモールドパッケージであることを特徴とする請求項１記載の半導体装置。  2. The semiconductor device according to claim 1, wherein the package of the semiconductor device is a mold package of QFP or SOP. ヒートスプレッダー板と、
前記ヒートスプレッダー板に設けられたインターポーザーと、
前記ヒートスプレッダー板にマウント材で接着して直接搭載されており、樹脂により封止された半導体素子と、を備え、
前記ヒートスプレッダー板の前記半導体素子を搭載する面に、上面視において、少なくとも前記半導体素子の外側に同心四角形状に複数の凹凸が形成されている、半導体装置。 A heat spreader plate;
And interposer provided on the heat spreader plate,
It is mounted directly on the heat spreader plate by bonding with a mounting material, and includes a semiconductor element sealed with resin ,
Wherein the surface for mounting the semiconductor element of the heat spreader plate, in top view, has a plurality of irregularities on concentric square shape on the outside of at least the semiconductor element is formed and a semiconductor device. 前記インターポーザーはプリント基板またはＴＡＢテープであり、前記半導体装置のパッケージはＢＧＡのモールドパッケージであることを特徴とする請求項３記載の半導体装置。  4. The semiconductor device according to claim 3, wherein the interposer is a printed circuit board or a TAB tape, and the package of the semiconductor device is a BGA mold package. 前記マウント材は銀ペーストまたは絶縁ペーストであることを特徴とする請求項１乃至請求項４のいずれか一項に記載の半導体装置。The mounting member is a semiconductor device according to any one of claims 1 to 4, characterized in that a silver paste or an insulating paste. 前記凹凸はピッチ０．３ｍｍ以下、１．０ｍｍ以上でプレス刻印したものであることを特徴とする請求項１乃至請求項５のいずれか一項に記載の半導体装置。The uneven pitch 0.3mm A semiconductor device according to any one of claims 1 to 5, characterized in that it is obtained by press stamping in 1.0mm or more. 前記凸からの前記凹の深さは５．０μｍ以上、２０．０μｍ以下であることを特徴とする請求項１乃至請求項６のいずれか一項に記載の半導体装置。The depth of the concave convex is 5.0μm or more, the semiconductor device according to any one of claims 1 to 6, characterized in that not more than 20.0 .mu.m. 平面視において、前記半導体素子の中心と同心四角形状の複数の前記凹凸の中心とが一致している、請求項１から７のいずれか１項に記載の半導体装置。8. The semiconductor device according to claim 1, wherein a center of the semiconductor element coincides with a center of the plurality of concavities and convexities having a concentric quadrangular shape in plan view.
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