JPH0621348A - Semiconductor element - Google Patents

Abstract

PURPOSE:To obtain a semiconductor chip capable of constituting a circuit containing passive elements such as resistors and capacitors of large value. CONSTITUTION:A passive element is formed into one body by using an insulating film 3, a thin-film conductor 4 or a thin-film resistor 5 on the rear surface of a semiconductor chip 1, and a circuit is constituted by utilizing the passive elements, so that a circuit containing passive elements may be constituted of a semiconductor chip by itself.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor element, and more particularly to a semiconductor element that requires passive elements such as resistors and capacitors as external parts.

[0002]

2. Description of the Related Art A conventional semiconductor element is an active element such as a diode or a transistor formed by introducing impurities into a semiconductor substrate. However, a required area is required to form a resistor having a large resistance value or a large-capacity capacitor. Therefore, it has been difficult to realize a circuit including these passive elements.
Therefore, conventionally, a required circuit is configured as a hybrid structure as shown in FIG. That is, the wiring board 11
The circuit pattern 12 is formed on the conductor film, the semiconductor element chip 1 is mounted on the circuit pattern 12, or the chip capacitor 13 is mounted, and electrical connection to the circuit pattern 12 is performed by the bonding wire 14 and the solder 15. ing. Further, the resistor 16 is formed by forming a resistive film on a part of the circuit pattern 12.

[0003]

In such a conventional structure, when a circuit including passive elements such as a resistor having a large resistance value and a large-capacity capacitor is formed, a hybrid structure must be used. There is a problem that the entire structure of the device becomes complicated, the outer shape becomes large, and the cost becomes high. An object of the present invention is to provide a semiconductor element capable of forming a circuit including a passive element having a large value with an element chip alone.

[0004]

The semiconductor device of the present invention comprises:
A passive element is integrally formed on the back surface of the semiconductor element chip by using an insulating film, a thin film conductor, a thin film resistor and the like. A resistor or a capacitor is configured as the passive element.

[0005]

According to the present invention, since passive elements such as resistors and capacitors are integrally formed on the back surface of the semiconductor element chip,
It is possible to configure the circuit including the passive element by the semiconductor element chip alone.

[0006]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described with reference to the drawings. FIG. 1 is a sectional view showing a first embodiment of the present invention. The semiconductor element chip 1 forms an element by diffusing predetermined impurities on the surface side of the semiconductor substrate, and forms a required circuit by an insulating film and internal wiring formed on the surface. And
A bonding pad 2 is formed on a part of the circuit and is exposed on the surface of the semiconductor element chip 1. On the other hand, an insulating film 3 such as a silicon oxide film is formed on the back surface of the semiconductor element chip 1.
Is formed, the tantalum resistor 5 is formed of a tantalum thin film in a state of being insulated from the semiconductor substrate by the insulating film 3, and these tantalum resistors 5 are electrically connected to each other by a circuit pattern 4 formed into a required pattern. .

According to this structure, a resistor can be formed on the back surface of the semiconductor element chip 1, and this resistor is used.
Since it is possible to use substantially the entire area of the back surface of the device, it becomes easy to form a resistor having a large resistance value. For this reason,
A semiconductor circuit including a resistor having a large resistance value can be configured by a semiconductor element chip alone.

FIG. 2 is a sectional view of a second embodiment of the present invention. In this embodiment, similar to the first embodiment, the bonding pad 2 is formed on the surface of the semiconductor element chip 1,
A tantalum resistor 5 is formed on the insulating film 3 on the back surface of the semiconductor element chip 1, and a circuit pattern 4, a dielectric film 6 and an upper metal film 7 are further formed. In this configuration, since the circuit pattern 4 or the tantalum resistor 5, the dielectric film 6, and the upper metal film 7 can form a capacitor, a resistor having a large resistance value and a capacitor having a large capacitance are formed on the back surface of the semiconductor element chip 1. Therefore, the circuit including these passive elements can be configured by the semiconductor element chip alone.

[0009]

As described above, according to the present invention, since a large-value resistor or large-capacity capacitor is integrally formed on the back surface of a semiconductor element chip by an insulating film, a thin-film resistor, a thin-film conductor, etc. The capacitor can be incorporated into the semiconductor element, a required circuit can be configured by the semiconductor element chip alone, and it is not necessary to hybridize the semiconductor device.

[Brief description of drawings]

FIG. 1 is a sectional view of a first embodiment of the present invention.

FIG. 2 is a sectional view of a second embodiment of the present invention.

FIG. 2 is a cross-sectional view of a conventional hybrid semiconductor device.

[Explanation of symbols]

1 Semiconductor Element Chip 2 Bonding Pad 3 Insulating Film 4 Circuit Pattern 5 Tantalum Resistor 6 Dielectric Film 7 Upper Metal Film

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[Procedure amendment]

[Submission date] July 14, 1993

[Procedure Amendment 1]

[Document name to be amended] Statement

[Name of item to be corrected] Brief description of the drawing

[Correction method] Change

[Correction content]

[Brief description of drawings]

FIG. 1 is a sectional view of a first embodiment of the present invention.

FIG. 2 is a sectional view of a second embodiment of the present invention.

FIG. 3 is a cross-sectional view of a conventional hybrid semiconductor device.

[Explanation of reference numerals] 1 semiconductor element chip 2 bonding pad 3 insulating film 4 circuit pattern 5 tantalum resistance 6 dielectric film 7 upper metal film

Claims (2)

[Claims] 1. A semiconductor element in which a passive element is integrally formed by using an insulating film, a thin film conductor, a thin film resistor and the like formed on the back surface of a semiconductor element chip. 2. The semiconductor device according to claim 1, wherein the passive device is a resistor or a capacitor.