JPH06212487A - Partially plating device - Google Patents

Partially plating device

Info

Publication number
JPH06212487A
JPH06212487A JP2160193A JP2160193A JPH06212487A JP H06212487 A JPH06212487 A JP H06212487A JP 2160193 A JP2160193 A JP 2160193A JP 2160193 A JP2160193 A JP 2160193A JP H06212487 A JPH06212487 A JP H06212487A
Authority
JP
Japan
Prior art keywords
plating
plated
lead frame
wire
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2160193A
Other languages
Japanese (ja)
Other versions
JP3220820B2 (en
Inventor
Kenji Matsumura
松村健司
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dai Nippon Printing Co Ltd
Original Assignee
Dai Nippon Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dai Nippon Printing Co Ltd filed Critical Dai Nippon Printing Co Ltd
Priority to JP02160193A priority Critical patent/JP3220820B2/en
Publication of JPH06212487A publication Critical patent/JPH06212487A/en
Application granted granted Critical
Publication of JP3220820B2 publication Critical patent/JP3220820B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Electroplating Methods And Accessories (AREA)

Abstract

PURPOSE:To prevent the deposition of a plating soln. even if the soln. is wetted by applying the same or baser potential to the region except a specified region to be plated. CONSTITUTION:A plating soln. is ejected from an election port 5 to plate a specified region of a lead frame 1. An electrical conductive wire 7 such as a copper wire is tied on a top plate 2 to allow the wire 7 and frame 1 to have the same potential or the wire 7 to have a lower potential than the frame 1. A voltage follower circuit is formed between a plating power source and the wire 7, and a current value between an opening 6 for ejecting a liq. as an anode and the frame 1 as a cathode is kept constant even if the plating soln. is leaked or not.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は,半導体素子用リードフ
レーム等の部分メッキ装置に関するもので、特に、所定
のメッキ領域以外のレール部及びアウターリード部等へ
のメッキを防止するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a partial plating apparatus for semiconductor device lead frames and the like, and particularly to prevent plating on rail portions and outer lead portions other than predetermined plating regions.

【0002】[0002]

【従来の技術】従来、半導体素子用リードフレームの銀
メッキ等は、インナーリード先端と素子の端子部をワイ
ヤボンデイングで接続する為、所定のリード先端部のみ
を部分メッキしている。この銀メッキ等に使用される部
分メッキ装置は図1に記載されるように、メッキ液の圧
に対抗して、裏面よりリードフレーム1全体を押さえる
プレス部4と、リードフレーム1を支持し、リードフレ
ーム1のメッキすべき所定領域以外の部分を覆う部分メ
ッキ用のマスクを形成する、非導電体からなるトッププ
レート部2を有し、メッキ液5を開孔部6先端より、噴
射させながらリードフレーム1のインナーリード先端等
の所定領域のみ銀メッキを施すが、一般的である。図1
では、開口部近傍を(+)に接続し、開口部を導電性材
料としているので、実質的に開口部をアノード(+)と
しており、メッキする所定領域以外のリードフレーム部
をマスキングして、インナーリード部等のメッキすべき
部分のみをメッキ液にさらして、アノード(+)となる
開口部から陰極(−)となるリードフレーム1へ電流を
流して行っている。しかしながら、種々の理由から、図
1のトッププレート表面にも、開孔より噴出されたメッ
キ液が流れ出し、メッキすべき所定領域以外の、リード
フレームのフレーム部等も、流れ出したメッキ液に浸さ
れ、流れ出したメッキ液がメッキ液排液孔部まで達する
ことがある。この場合、開孔部とメッキすべき所定領域
以外の、リードフレームのレール部等に、アノード
(+)から電気が流れ、銀が析出する。このような、所
定の領域以外への銀メッキの被着は、銀の無駄使いであ
るばかりでなく、所定領域への電流量にも影響し、所定
領域のメッキ量にむらがでる場合がある。近年、リード
フレームの分野でも、フアイン化、高品質化、多様化、
量産化、低価格化が、ますます要求されるようになって
き、このような、メッキ液のもれによる所定領域以外の
部分へのメッキ液洩れも大きな問題となってきた。
2. Description of the Related Art Conventionally, in the case of silver plating of a semiconductor element lead frame, only a predetermined lead tip portion is partially plated in order to connect the inner lead tip and the element terminal portion by wire bonding. As shown in FIG. 1, the partial plating apparatus used for this silver plating or the like supports the lead frame 1 and a press section 4 that presses the entire lead frame 1 from the back side against the pressure of the plating solution, While having a top plate portion 2 made of a non-conductive material that forms a mask for partial plating covering a portion of the lead frame 1 other than a predetermined area to be plated, the plating solution 5 is sprayed from the tip of the opening portion 6. It is common that silver plating is applied only to a predetermined area such as the tip of the inner lead of the lead frame 1. Figure 1
Then, since the vicinity of the opening is connected to (+) and the opening is made of a conductive material, the opening is substantially the anode (+), and the lead frame portion other than the predetermined area to be plated is masked, Only the portion to be plated, such as the inner lead portion, is exposed to the plating solution, and an electric current is passed from the opening portion serving as the anode (+) to the lead frame 1 serving as the cathode (-). However, for various reasons, the plating solution ejected from the openings also flows onto the surface of the top plate in FIG. 1, and the frame portion of the lead frame other than the predetermined area to be plated is also immersed in the flowing plating solution. , The flowing out plating solution may reach the plating solution drain hole. In this case, electricity flows from the anode (+) to the rail portion of the lead frame other than the opening and the predetermined area to be plated, and silver is deposited. Such deposition of silver plating on a region other than the predetermined region not only wastes silver, but also affects the amount of current flowing to the predetermined region, which may cause uneven plating on the predetermined region. . In recent years, even in the field of lead frames, finer, higher quality, diversification,
Mass production and cost reduction are becoming more and more demanded, and leakage of the plating solution to a portion other than a predetermined area due to the leakage of the plating solution has become a big problem.

【0003】[0003]

【発明が解決しようとする課題】従来、半導体素子用リ
ードフレームのインナーリード部への銀メッキにおいて
は、このような所定領域以外のフレーム部等へのメッキ
付着防止策として、(1)所定領域以外へのメッキ付着
を剥離処理で取り除く、(2)リードフレーム部及び部
分メッキ用のマスクを支持する非導電体からなるトップ
プレート部上のメッキ液流出をなくす、(3)リードフ
レーム全面をマスキングする、(4)メッキ時、アノー
ド(+)となる、液を噴出する開孔部とメッキすべき所
定の領域以外のフレーム部等に電気的な閉回路をつくら
せないよう柵等で遮蔽をする、等が考えられてきた。
(1)は最も簡単な方法であるが、Cu材では困難であ
り、剥離用の薬品も高価である。42材においても銀メ
ッキ面にダメージを与え、黒点等の不良を招く、(2)
は完全に行うことが難しく、完全に行わないと長時間モ
レを防止することはできない、(3)は調整に時間がか
かる、(4)は装置の大改造が必要となる、などそれぞ
れ問題があった。又、(2)については、メッキ液洩れ
自体の防止は、種々の理由で、完全にはできない。実際
に、長時間完全に洩れを防止することは、非常に困難な
ことである。以上のように、所定領域以外のレール部等
へのメッキ付着を防止することは、上記の(1)〜
(4)の方法等では、長時間安定して、所定領域以外の
フレーム部等へのメッキ付着なく、メッキを行うことは
難しく、(1)〜(4)に代わる対応方法が求められて
いた。本発明は,上記のような状況のもと、比較的簡単
な方法により、長期的に安定して、所定の領域以外への
メッキ付着を防止し、且つ、所定領域のメッキ量にむら
がない部分めっき方法を提供とするものである。
Conventionally, in the silver plating on the inner lead portion of the lead frame for a semiconductor element, as a measure for preventing the plating adhesion to the frame portion other than such a predetermined area, (1) the predetermined area Removal of plating adhered to other parts by peeling process (2) Eliminate the outflow of plating solution on the top plate part consisting of a non-conductor supporting the lead frame part and the mask for partial plating, (3) Masking the entire lead frame (4) When plating, shield with a fence to prevent the formation of an electrically closed circuit in the openings that will become the anode (+), which ejects the liquid, and the frame part other than the prescribed area to be plated. Have been considered.
Although (1) is the simplest method, it is difficult to use a Cu material and the chemicals for peeling are expensive. 42 material also damages the silver-plated surface, leading to defects such as black spots (2)
Is difficult to do completely, and if it is not done completely, leakage cannot be prevented for a long time, (3) takes a long time to adjust, (4) requires a major modification of the device, etc. there were. With regard to (2), it is not possible to completely prevent the leakage of the plating solution for various reasons. In fact, it is very difficult to completely prevent leakage for a long time. As described above, preventing the plating from adhering to the rail portion or the like other than the predetermined area can be prevented by the above (1)
According to the method (4), it is difficult to perform plating without being attached to the frame portion other than the predetermined area stably for a long period of time, and there has been a demand for a corresponding method instead of (1) to (4). . Under the circumstances as described above, the present invention, by a relatively simple method, stably stabilizes for a long period of time, prevents the adhesion of plating to areas other than the predetermined area, and has no uneven plating amount in the predetermined area. A partial plating method is provided.

【0004】[0004]

【課題を解決するための手段】本発明は,上記の問題を
比較的簡単で、効果的に解決できる方法を提供しようと
するものであって、あらかじめ被メッキ物をかこむよう
に導電体を配置し、メッキ液がトッププレート上に流出
し、メッきすべき所定の領域以外の部分とアノードとが
メッキ液により、電気的に導通となった場合、被メッキ
物と該導電体とを同電位、もしくは、被メッキ物に対し
て該導電体を低い電位とすることにより、メッキすべき
所定の領域以外へのメッキを防止すものである。図1の
ように、トッププレート部に銅線等の電気導電性のワイ
ヤをくくりつけ、且つ、そのワイヤとリードフレームと
を同じ電位となるように接続するか、もしくは、ワイヤ
部がリードフレームより低い電位となるように回路を設
け接続することにより、流出したメッキ液によるリード
フレームのメッキすべき所定領域以外のレール部等への
メッキの付着を防止するものである。
DISCLOSURE OF THE INVENTION The present invention is intended to provide a method capable of solving the above problems relatively easily and effectively, in which a conductor is arranged in advance so as to enclose an object to be plated. When the plating liquid flows out onto the top plate and the portion other than the predetermined region to be covered and the anode are electrically connected by the plating liquid, the object to be plated and the conductor are at the same potential, or By setting the electric potential of the conductor to be low with respect to the object to be plated, plating in a region other than a predetermined region to be plated is prevented. As shown in FIG. 1, an electrically conductive wire such as a copper wire is attached to the top plate portion and the wire and the lead frame are connected so as to have the same potential, or the wire portion is connected to the lead frame. By providing a circuit so as to have a low potential and connecting the circuit, it is possible to prevent the plating solution from adhering to the rail portion or the like other than the predetermined area of the lead frame to be plated by the plating solution that has flowed out.

【0005】これにより、所定領域以外のメッキ付着は
防止されるが、導電体とリードフレームを同電位となる
ように直結した場合、アノード(+)からの電流は、リ
ードフレーム部への電流とトッププレート部への電流に
分離され、リードフレームのメッキすべき所定領域への
電流値は減少することになる。これを防止するため、上
記構成とするとともに、更に、メッキ電源と、ワイヤ用
の電源とを別電源とした。即ち、メッキ電源とワイヤー
間にボルテージフオロア回路を図1のように入れ、アノ
ード(+)とリードフレーム(−)間の電流値を一定と
した。ボルテージフオロア回路としては、アノード、リ
ード間の浴抵抗の100倍以上の入力抵抗を持ち、出力
抵抗が1オーム以下のものが適当である。又、上記手段
は、図1に示されるような、部分メッキ装置に限定され
ないことは言うまでもない。
This prevents the adhesion of plating in areas other than the predetermined area. However, when the conductor and the lead frame are directly connected so as to have the same potential, the current from the anode (+) is the same as the current to the lead frame section. The current to the top plate portion is separated, and the current value to the predetermined area of the lead frame to be plated is reduced. In order to prevent this, in addition to the above configuration, the plating power source and the wire power source are different power sources. That is, a voltage follower circuit was inserted between the plating power source and the wire as shown in FIG. 1 to make the current value between the anode (+) and the lead frame (−) constant. As the voltage follower circuit, a circuit having an input resistance 100 times or more the bath resistance between the anode and the lead and an output resistance of 1 ohm or less is suitable. Needless to say, the above means is not limited to the partial plating apparatus as shown in FIG.

【0006】[0006]

【作用】上記のように、本発明の半導体素子用リードフ
レームの銀メッキ等の部分メッキにおいては、以下の作
用を奏する。 (1)銅ワイヤ等の導電体で、被メッキ物を囲み、且
つ、該導電体が、被メッキ物と等電位、もしくは、該該
導電体が被メッキ物に対して低い電位になる回路を有す
ることによって、メッキ液が漏れて、メッキすべき領域
以外の部分がメッキ液に浸され、メッキ液により被メッ
キ物とアノードとが電気的に導通となった場合にも、該
導電体が被メッキ物に対して、同電位もしくは卑の電位
に成るため、電気的に、被メッキ物のメッキすべき所定
領域以外の部分へのメッキ付着を防止させることができ
る。 (2)メッキ電源とワイヤー間にボルテージフオロア回
路をいれることにより、アノード(+)となる液を噴出
する開孔部と陰極(−)となるリードフレーム等の被メ
ッキ物間の電流値を、メッキ液の洩れの有無に関わらず
一定とすることができる。
As described above, in the partial plating such as silver plating of the lead frame for a semiconductor device of the present invention, the following effects are exhibited. (1) A circuit in which an object to be plated is surrounded by an electric conductor such as a copper wire, and the electric conductor has the same potential as the object to be plated or the electric conductor has a lower potential than the object to be plated. With this structure, even if the plating liquid leaks and the portion other than the area to be plated is immersed in the plating liquid and the plating liquid electrically connects the object to be plated and the anode, the conductor is covered. Since the same potential or base potential is applied to the plated object, it is possible to electrically prevent the plated object from being attached to a portion other than the predetermined region to be plated. (2) By inserting a voltage follower circuit between the plating power source and the wire, the current value between the object to be plated such as the lead frame etc., which becomes the cathode (-) and the opening (where the anode (+) is ejected) It can be kept constant regardless of whether or not the plating solution leaks.

【0008】[0008]

【実施例】実施例は半導体素子用のリードフレームの素
子端子とリードフレームのインナーリード先端部とをワ
イヤボンデイングするためのインナーリード先端部への
銀メッキに関するもので、図1にそい説明する。図1は
リードフレーム1の所定領域のみに銀の部分メッキを施
すための装置で、1は被メッキ物であるリードフレー
ム、2はリードフレーム部を支持し、部分メッキ用のマ
スクを構成する、トッププレート部、3及び4はリード
フレームを、メッキ液圧に対抗して抑えるためのプレス
部で、3はシリコンゴム等の弾性体からなるプレスラバ
ーで、4は圧をかけるためのプレスブロックである。5
はメッキ液で開孔部6を通り、被メッキ物であるリード
フレーム1に噴射され、排出される。開孔部6はメッキ
液の噴出口で、メッキのアノード部(+)であり、トッ
ププレート部2は、メッキの陰極となるリードフレーム
1を搭載し、リードフレーム1の所定の領域のみをメッ
キ液にさらし、且つ、メッキ液全体を覆うためのもので
ある。図1に示すように、銅ワイヤ部7をトッププレー
ト2部の側面全周にくくりつけ、この銅ワイヤ部7とリ
ードフレーム部1が同電位となるよう接続するととも
に、ボルテージフオロア回路を形成し、リードフレーム
のメッキすべき所定の領域部への電流量が一定(約1%
以下の変動)になるようにした。これにより、リードフ
レームの所定の領域以外のフレーム等へのメッキ付着が
なくなるとともに、所定の領域へのメッキの付着量を安
定して、長時間メッキを実施することができた。
EXAMPLE An example relates to silver plating on the tip of the inner lead for wire bonding the element terminal of the lead frame for a semiconductor element and the tip of the inner lead of the lead frame, which will be described with reference to FIG. FIG. 1 shows an apparatus for performing a partial plating of silver only on a predetermined area of a lead frame 1, 1 is a lead frame that is an object to be plated, 2 is a lead frame portion, and constitutes a mask for partial plating. Top plate parts 3 and 4 are press parts for suppressing the lead frame against the plating liquid pressure, 3 is a press rubber made of an elastic material such as silicon rubber, and 4 is a press block for applying pressure. is there. 5
Is injected into the lead frame 1 which is the object to be plated by the plating solution through the opening portion 6 and is discharged. The opening portion 6 is a jet of the plating solution and is an anode portion (+) of the plating, and the top plate portion 2 is mounted with a lead frame 1 serving as a cathode of the plating, and only a predetermined area of the lead frame 1 is plated. It is for exposing to the liquid and covering the entire plating liquid. As shown in FIG. 1, the copper wire portion 7 is attached to the entire circumference of the side surface of the top plate 2 so that the copper wire portion 7 and the lead frame portion 1 are connected so as to have the same potential, and a voltage follower circuit is formed. However, the amount of current to the predetermined area of the lead frame to be plated is constant (about 1%).
The following fluctuation). As a result, the plating adhesion to the frame and the like other than the predetermined region of the lead frame was eliminated, and the plating adhesion amount to the predetermined region was stabilized, and the plating could be performed for a long time.

【0009】[0009]

【発明の効果】上記のような構成にすることにより、被
メッキ物のメッキすべき所定領域以外の、不必要な部分
への銀の析出を防止するとともに、メッキすべき所定領
域への電流量を安定化し、品質的にも、生産的にも、安
定な部分メッキができる装置の提供を可能にしている。
With the above-described structure, silver is prevented from being deposited on unnecessary portions other than the predetermined area to be plated on the object to be plated, and the current amount to the predetermined area to be plated is increased. This makes it possible to provide a device that can perform stable partial plating in terms of quality and productivity.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の実施例を示す図。FIG. 1 is a diagram showing an embodiment of the present invention.

【図2】従来の部分メッキ装置を示す図。FIG. 2 is a diagram showing a conventional partial plating apparatus.

【符号の説明】[Explanation of symbols]

1 リードフレーム 2 トッププレート 3 プレートラバー 4 プレス部 5 メッキ液 6 開孔部(メッキ液噴射部) 7 銅ワイヤ 8 メッキ用定電流源 9 ボルテージフオロア回路 10 ボルテージフオロア回路用電源 1 Lead frame 2 Top plate 3 Plate rubber 4 Press part 5 Plating liquid 6 Opening part (plating liquid injection part) 7 Copper wire 8 Constant current source for plating 9 Voltage follower circuit 10 Power supply for voltage follower circuit

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 ワイヤ等の導電体で、被メッキ物を囲
み、且つ、該導電体が、被メッキ物と等電位、もしく
は、該導電体が被メッキ物に対して低い電位になる回路
を有することを特徴とする部分メッキ用装置
1. A circuit in which an object to be plated is surrounded by a conductor such as a wire, and the conductor has the same potential as the object to be plated or the conductor has a lower potential than the object to be plated. Partial plating device characterized by having
【請求項2】 第1項記載の部分メッキ用治具におい
て、メッキ電源とワイヤー等の導電体間にボルテージフ
オロア回路をいれ、アノード(+)と被メッキ物(−)
間の電流をメッキ液の洩れの有無に関わらず一定とした
ことを特徴とする部分メッキ用装置
2. The jig for partial plating according to claim 1, wherein a voltage follower circuit is provided between a plating power source and a conductor such as a wire, and the anode (+) and the object to be plated (-) are placed.
Partial plating device characterized in that the current between the electrodes is constant regardless of whether or not the plating solution leaks.
【請求項3】 第1項ないし第2項記載の部分メッキ用
装置が、メッキ液の圧に対抗して、裏面より被メッキ物
であるリードフレーム全体を押えるプレス部と、リード
フレーム部を支持し、部分メッキ用のマスクを構成する
非導電体からなるトッププレート部を有し、部分メッキ
用のマスクを介してメッキが行われる、リードフレーム
用の部分メッキ用治具であって、ワイヤー等の導電体を
トッププレート部の側面全周にくくりつけたことを特徴
とする半導体素子用リードフレームの部分メッキ用装置
3. The apparatus for partial plating according to claim 1 or 2, which supports a press section for pressing the entire lead frame as the object to be plated from the back side against the pressure of the plating solution and a lead frame section. However, it is a jig for partial plating for a lead frame, which has a top plate portion made of a non-conductive material that constitutes a mask for partial plating, and is plated through the mask for partial plating, such as a wire. Device for partial plating of lead frame for semiconductor element, characterized in that the electric conductor is attached to the entire circumference of the side surface of the top plate portion.
JP02160193A 1993-01-18 1993-01-18 Equipment for partial plating Expired - Fee Related JP3220820B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP02160193A JP3220820B2 (en) 1993-01-18 1993-01-18 Equipment for partial plating

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP02160193A JP3220820B2 (en) 1993-01-18 1993-01-18 Equipment for partial plating

Publications (2)

Publication Number Publication Date
JPH06212487A true JPH06212487A (en) 1994-08-02
JP3220820B2 JP3220820B2 (en) 2001-10-22

Family

ID=12059563

Family Applications (1)

Application Number Title Priority Date Filing Date
JP02160193A Expired - Fee Related JP3220820B2 (en) 1993-01-18 1993-01-18 Equipment for partial plating

Country Status (1)

Country Link
JP (1) JP3220820B2 (en)

Also Published As

Publication number Publication date
JP3220820B2 (en) 2001-10-22

Similar Documents

Publication Publication Date Title
CA1070635A (en) Method and apparatus for selectively electroplating an area of a surface
KR100291653B1 (en) Electroplating apparatus and method
US4545885A (en) Selective electroplating apparatus having a cleaning device
TWI405513B (en) Metal plugged substrates with no adhesive between metal and polyimide
US7713398B2 (en) Selective plating apparatus and selective plating method
JPH06212487A (en) Partially plating device
JP2617637B2 (en) Partial plating apparatus and lead frame for semiconductor device
JP6740428B1 (en) Electrolytic stripping device
JP2882416B2 (en) Method of forming metal element by electrolytic plating
JPH08274231A (en) Lead frame and manufacture of lead frame
JP3343077B2 (en) Electrode for plating
JPH10189854A (en) Thin plating method of lead frame for semiconductor device
JP2926497B2 (en) Method for manufacturing semiconductor device
JP3438420B2 (en) Partial plating equipment
JPH06179998A (en) Plating device
JP3206131B2 (en) Wafer plating equipment
JP3440348B2 (en) Continuous plating method and continuous plating apparatus
JP3167782B2 (en) High-speed solder plating equipment for electronic components
JPH04246200A (en) Method for electroplating substrate
JPS5828829A (en) Semiconductor wafer plating apparatus
JP2004183073A (en) Method for partial plating of lead frame
JPH04199550A (en) Solder plating device for lead
JPS60183757A (en) Partial plating method of semiconductor lead frame
JPH087642Y2 (en) Lead solder plating equipment
JPS61110790A (en) Jet plating method of ic lead frame

Legal Events

Date Code Title Description
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20010703

LAPS Cancellation because of no payment of annual fees