JP3343077B2 - Electrode for plating - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates are those which relate to plating <br/> electrodes applied to the plating process, such as in the manufacturing process of semiconductor devices.

[0002]

2. Description of the Related Art In a semiconductor device manufacturing process,
A plating process is mainly used to form a wiring portion or an electrode portion (such as a bump). Usually, in a plating process applied to a semiconductor device, gold, silver, solder, and the like are formed on aluminum electrode pads of a wafer. The plating solution contains sulfuric acid, sulfuric acid,
A plating solution in which thallium or the like is dissolved or a plating solution in which cyan is dissolved is generally used.

There are also a plurality of plating methods, such as an electrolytic plating method in which plating is performed by applying an electric field depending on a plating solution to be used, and an electroless plating method in which plating is performed without applying an electric field. There are various structures of a plating apparatus used in this plating step.

FIG. 6 is a plan view showing a schematic configuration of an example of a conventional anode electrode used in the electrolytic plating apparatus. As shown in FIG. 6, the anode electrode 20 of the conventional plating apparatus has a single disk shape formed by using a conductive material such as platinum or gold uniformly as a whole, as shown in FIG. Often have. Plating is performed by incorporating the anode electrode 20 into a plating apparatus.

[0005]

However, in a conventional plating apparatus, when plating a wafer having a large diameter, particularly a wafer having a diameter of 8 inches or more, the plating solution flow rate and flow rate are not uniform in the vicinity of the wafer, or the anode is not uniform. The non-uniformity of the potential distribution at or near the wafer, which is the object to be plated, due to the voltage applied between the electrode and the cathode electrode increases, and therefore, in the configuration of the anode electrode 20 shown in FIG. Cannot be absorbed, and a variation in plating thickness may occur.

SUMMARY OF THE INVENTION In view of the above-mentioned conventional problems, the present invention provides a plating method capable of suppressing a variation in plating thickness in a plated object even if the plated object has a large diameter, and obtaining a uniform plated thickness. it is an object to provide a use electrodes.

[0007]

Means for Solving the Problems In order to achieve the above object, the plating electrode according to the present invention has a
A type that jets a plating solution and applies an electric field to the electrodes to perform plating
Electrodes for plating used in jet-type plating
And placed opposite to the object to be plated.
With a low conductive material in the center and a high conductive material in the periphery
It is characterized by quality .

In addition, the object to be plated is placed in a plating solution,
Dipping type plating equipment that performs plating by applying an electric field to
An electrode for plating used for
Placed facing the object to be plated, at least
The part of the body facing the power supply connection
Use conductive material and make other parts highly conductive
Features .

[0009]

[0010]

[0011]

[0012]

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 is a schematic configuration diagram showing a main part of a jet-type plating apparatus for manufacturing a semiconductor in a cross-sectional view for explaining a first embodiment of the present invention. Reference numeral 1 denotes a jet-type plating apparatus. 2, a plating cup, 3 a wafer to be plated (semiconductor wafer), 4 a cathode electrode, 5 a jet pump, 6 a plating solution, and 7 a power supply. In the present embodiment, the entire jet-type plating apparatus has the same configuration as a conventionally used apparatus, but is characterized in that the configuration of the anode electrode 1 is different from that of the conventional apparatus.

FIG. 2 is a plan view showing a schematic structure of the anode electrode 1 used in the jet plating apparatus shown in FIG.
The anode electrode 1 is formed by combining two different materials concentrically, and the outer peripheral portion 1-A is an anode portion made of a high conductive material, and the central portion 1-B is an anode portion made of a low conductive material. There is an outer peripheral portion 1-A and a central portion 1-A
B is formed in a mesh shape so that the plating solution 6 can be jetted.

FIG. 3 is a plan view showing a schematic structure of another anode electrode 1 used in the jet plating apparatus shown in FIG. 1. In the anode electrode 1, 1-C of the outer peripheral portion is made of a highly conductive material. The anode portion and the central portion 1-D are opened so as to form a donut shape as a whole.

A procedure for performing plating using the jet plating apparatus shown in FIG. 1 will be described.

First, one of the disk-shaped anode electrodes 1 shown in FIG. 2 or FIG. 3 is incorporated into the plating cup 2 of the jet plating apparatus main body. Thereafter, the plating target wafer 3 is set on the plating cup 2. On this occasion,
It is necessary to ensure that the wafer 3 to be plated and the cathode electrode 4 are electrically connected to each other. Thereafter, the plating solution 6 is jetted from the lower portion of the plating cup 2 by the jet pump 5, and the plating solution 6 abuts on the wafer 3 to be plated. Thereafter, a current is supplied from the power supply 7 to the anode electrode 1 and the cathode electrode 4, and plating is performed in a known manner.

Next, specific materials, configurations and effects of the anode electrode shown in FIG. 2 will be described. For the highly conductive material anode 1-A, a material having a particularly low specific resistance among metals such as platinum, gold, and silver is used. On the other hand, a material having a higher resistance than platinum, gold, and silver, such as titanium and aluminum, is used for the low conductive material anode portion 1-B. As shown in FIG. 2, the outer peripheral portion of the circular anode electrode 1 is made of a high conductive material anode portion 1-A, and the central portion is made of a low conductive material anode portion 1-B. 1-
A and 1-B are formed in a mesh shape so that the plating solution 6 passes therethrough.

For example, a 6 inch wafer has a current density of 0.4 A
When performing gold plating under the condition of / dm ² , the size of the anode electrode 1 for the jet type plating apparatus to be used has a diameter of 10
It is preferable that the thickness is 0 mm, and the portion of the highly conductive material anode portion 1-A is about 30 mm from the outer periphery.

By using the anode electrode 1 in which the anode portion 1-A of the high conductive material and the anode portion 1-B of the low conductive material are combined, the uniformity of the thickness of the plating layer grown on the wafer is improved. can do. This improvement effect can be explained as follows.

That is, in the jet plating apparatus,
By the jet action of the jet pump 5 shown in FIG.
Flows radially from the upper outlet of the plating cup 2 in the direction of the wafer 3 to be plated.
The flow velocity in the central portion of the flow becomes faster, and the flow velocity becomes lower as it comes closer to the tapered surface of the plating cup 2.

By the way, the plating solution 6 contains ions of a conductive substance constituting a plating layer grown on a wafer. Therefore, if the anode electrode 1 is made of a uniform single material as in the prior art, the electric field between the anode electrode 1 and the wafer 3 to be plated becomes almost uniform, and the local flow velocity distribution of the plating solution 6 is obtained. Is reflected on the surface of the wafer 3 to be plated. For this reason, the thickness of the plating layer reflects the amount of ions and thus the flow velocity distribution, and the center of the wafer corresponding to the center of the plating solution jet tends to be thick.

On the other hand, when the anode electrode 1 shown in FIG. 2 is used, the central region of the electrode is constituted by the anode portion 1-B of a low conductive material, and the outer peripheral portion of the electrode is constituted by the anode portion 1-A of a high conductive material. As a result, a potential distribution is generated such that the potential decreases in the central region of the anode electrode 1 and increases in the outer peripheral region. Therefore, the anode electrode 1
The electric field between the substrate 3 and the plating target wafer 3 is small in the center of the jet of the plating solution 6 and large in the outer peripheral portion, and the electric field is distributed. Accordingly, since the electric field is small at the center of the plating solution jet having a large flow rate, the ability of ions to move in the wafer direction is reduced as compared with the vicinity of the plating solution jet.

For this reason, the amount of ions that reach the wafer surface within a certain period of time decreases at the center of the jet compared to the prior art. Therefore, on the wafer, it is possible to form a uniform plating layer in which the plating thickness does not increase at the center corresponding to such an ion amount distribution.

Next, the material, configuration and effect of the donut-shaped anode electrode 1 shown in FIG. 3 will be described. Platinum, gold, silver or the like is used for the highly conductive material anode 1-C,
As shown in FIG. 3, the overall shape is such that the center portion is hollowed out in a circular shape, and an opening 1-D is formed in the center portion of the highly conductive material anode portion 1-C. I have.

The anode electrode 1 shown in FIG. 3 has a donut shape having an opening 1-D at the center thereof, so that there is no potential at the opening 1-D during the plating operation. Therefore, the wafer 3 to be plated
The electric field between the anode electrode 1 and the anode electrode 1 is extremely lower at the center of the jet of the plating solution 6 than when the anode electrode 1 shown in FIG. 2 is used, and the amount of ions reaching the wafer 3 to be plated is greatly reduced. Become. For this reason, the anode electrode 1 shown in FIG. 3 has a nonuniform plating layer thickness that cannot be controlled by the anode electrode 1 shown in FIG. This is very effective when plating a large diameter wafer, for example, a wafer of 8 inches or more.

The anode portion 1-B of the low conductivity material and the anode portion 1-A of the high conductivity material in the anode electrode 1 described above.
The dimensions of the highly conductive material anode portion 1-C and the opening 1-D are not particularly limited to the above examples. These dimensions are appropriately adjusted and set so that the plating layer on the wafer becomes uniform.

FIG. 4 is a schematic structural view showing a main part of the interior of a dip type plating apparatus used in a semiconductor device manufacturing process for explaining a second embodiment of the present invention. Electrode, 11 is a wafer to be plated,
12 is a cathode electrode, 13 is a plating solution, 14 is a power supply, 1
5 is a plating solution tank.

FIG. 5 is a plan view showing a schematic configuration of the anode electrode 10 applied to the dip plating apparatus shown in FIG. 4, wherein 10-A is an anode portion of a high conductive material formed at the lower portion, and 10-B is A low conductive material anode formed on the upper part.

A procedure for performing plating using the dip plating apparatus shown in FIG. 4 will be described.

First, the anode electrode 10 is assembled in a dip plating apparatus main body. Thereafter, the wafer to be plated 11 is connected to the cathode electrode 12, and the wafer to be plated 11 is placed in the plating solution 13 in the plating solution tank 15. Thereafter, current is supplied from the power source 14 to the anode electrode 10 and the cathode electrode 1.
2 to perform plating.

Next, the material, configuration and effect of the anode electrode 10 for the dip type plating apparatus shown in FIG. 5 will be described. Platinum, gold, silver, or the like is used for the highly conductive material anode portion 10-A. Also, a low conductive material anode section 10-B
Is made of titanium, aluminum or the like. Further, as shown in FIG. 5, a portion spread over the disc-shaped anode electrode 10 (corresponding to the cathode electrode 12 side when installed in the apparatus shown in FIG. 4) is a highly conductive material anode portion 10-A.
And the other part is a low conductive material anode part 10-B
The configuration is as follows.

Generally, in a dip plating apparatus, FIG.
As shown in FIG. 2, the cathode electrode 12 is fixed to the upper end of the wafer 11 to be plated. However, since the resistance value of the wafer 11 to be plated made of a semiconductor material is extremely higher than the resistance value of the anode electrode 10 made of a metal, On the wafer 11 to be plated, current due to ions for forming a plating layer tends to flow intensively near the cathode electrode 12. Then, the plating thickness on the wafer to be plated 11 becomes large in the vicinity of the cathode electrode 12.

Therefore, the anode electrode 10 is configured as shown in FIG.
Is placed on the upper side so as to face the cathode electrode 11, the electric field between the wafer 11 to be plated and the anode electrode 10 becomes smaller at the upper part of the anode electrode 10 and becomes larger at the lower part thereof, as described above. Therefore, the amount of ions moving at a certain time near the upper portion of the anode electrode 10 is smaller than that of the lower portion, and this distribution has an effect of canceling the current concentration in the upper portion of the wafer 11 to be plated near the cathode electrode 12. Become. Therefore, the plating thickness on the plating target wafer 11 can be made uniform.

In the above-described embodiment, the configuration of any one of the anode electrodes 1 and 10 shown in FIGS. 2 and 5 is described as a combination of two materials having different conductivity. Instead, it is also conceivable to configure the anode electrode by combining three or more kinds of materials having different conductivity according to the diameter of the wafer and the degree of non-uniformity of the plating layer on the wafer.

[0036]

As described above, by using the plating electrode according to the structure of the present invention, the nonuniformity of the flow rate and the flow rate of the plating solution in the vicinity of the plating object, or the plating solution on the plating object and its unevenness. The unevenness of the thickness of the plating layer on the object to be plated, which is caused by the unevenness of the potential distribution in the vicinity, can be improved. The present invention is particularly effective when plating a semiconductor wafer having a large diameter of 8 inches or more.

[Brief description of the drawings]

FIG. 1 is a schematic configuration diagram of a jet plating apparatus for explaining a first embodiment of the present invention.

FIG. 2 is a plan view showing a schematic configuration of an anode electrode for a jet plating apparatus according to the first embodiment of the present invention.

FIG. 3 is a plan view showing a schematic configuration of another anode electrode for a jet plating apparatus according to the first embodiment of the present invention.

FIG. 4 is a schematic configuration diagram of a dip plating apparatus for explaining a second embodiment of the present invention.

FIG. 5 is a plan view showing a schematic configuration of an anode electrode for a dip plating apparatus according to a second embodiment of the present invention.

FIG. 6 is a plan view showing a schematic configuration of an anode electrode for a conventional plating apparatus.

[Explanation of symbols]

 1,10 Anode electrode 2 Plating cup 3,11 Plated wafer 4,12 Cathode electrode 5 Jet pump 6,13 Plating solution 7,14 Power supply 15 Plating solution tank 1-A, 1-C, 10-A Highly conductive material anode Part 1-B, 10-B Low conductive material anode part 1-D opening

──────────────────────────────────────────────────続 き Continued on the front page (58) Fields surveyed (Int. Cl. ⁷ , DB name) C25D 17/12 C25D 5/08 C25D 17/10 101 H01L 21/288

Claims (2)

(57) [Claims] 1. A plating solution is jetted onto a body to be plated,
A plating electrode used in a jet-type plating apparatus of a type in which an electric field is applied to an electrode to perform plating. The plating electrode is installed so as to face a body to be plated. An electrode for plating characterized by using a highly conductive material. 2. A plating electrode used in a dip plating apparatus of a type in which an object to be plated is placed in a plating solution and an electric field is applied to the electrode to perform plating, wherein the electrode faces the object to which a power supply is connected. An electrode for plating, wherein at least a portion of the object to be plated facing the power supply connection portion is made of a low conductive material, and other portions are made of a high conductive material.