JPS5828829A - Semiconductor wafer plating apparatus - Google Patents
Semiconductor wafer plating apparatusInfo
- Publication number
- JPS5828829A JPS5828829A JP12717981A JP12717981A JPS5828829A JP S5828829 A JPS5828829 A JP S5828829A JP 12717981 A JP12717981 A JP 12717981A JP 12717981 A JP12717981 A JP 12717981A JP S5828829 A JPS5828829 A JP S5828829A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- plating
- plated
- cathode electrode
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000007747 plating Methods 0.000 title claims abstract description 51
- 239000004065 semiconductor Substances 0.000 title claims abstract description 42
- 239000000463 material Substances 0.000 claims abstract description 11
- 239000002184 metal Substances 0.000 abstract description 6
- 229910052751 metal Inorganic materials 0.000 abstract description 6
- 239000007788 liquid Substances 0.000 abstract description 3
- 238000003825 pressing Methods 0.000 abstract description 3
- 238000009713 electroplating Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 43
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electroplating Methods And Accessories (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は半導体ウエハー表面に配線材料としての金属を
電解メッキ形成する半導体ウエハーのメッキ装置に関す
るものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor wafer plating apparatus for electrolytically plating metal as a wiring material on the surface of a semiconductor wafer.
半導体ウエハー表面に、配線材料としての例えば金又は
銅等を電解メッキを形成する工程は、例えばビームリー
ド型１Ｃ，パンプ型１Ｃの製造工程で行われている。The process of electrolytically plating a wiring material, such as gold or copper, on the surface of a semiconductor wafer is performed, for example, in the manufacturing process of beam lead type 1C and pump type 1C.
半導体ウエハーに対する従来のメッキ装置の構造を第１
図に示す。図中１１はテフロン等よりなるメッキ部本体
、１２はメッキ時の負（−）電極となるいわゆるカソー
ド電極部、１２ａはカソード電極部１２と導通させた半
導体ウエハーの支持部で、メッキ用マスク材（通常ホト
レジスト）を通じて半導体ウエハー表面（メッキ面）へ
メッキ電流を供給する必要から針状に形成されている。The first structure of conventional plating equipment for semiconductor wafers
As shown in the figure. In the figure, 11 is the main body of the plating part made of Teflon or the like, 12 is the so-called cathode electrode part which becomes the negative (-) electrode during plating, 12a is the supporting part of the semiconductor wafer which is electrically connected to the cathode electrode part 12, and is a mask material for plating. It is formed into a needle shape because it is necessary to supply plating current to the semiconductor wafer surface (plating surface) through (usually photoresist).
なお、支持部１２ａはメッキ部本体１１の開口径に、一
定間隔を置いて３〜４個所に設けられたものである。１
３はメッキ時の正（＋）電極となるいわゆるアノード電
極部で、半導体ウエハー１５の被メッキ面と対面してメ
ッキ部本体１１内に配接された網状体１３ａを有してい
る。１４は支持部１２ａ上に半導体ウエハーを圧接して
カソード電極１２に半導体ウエハーを導通させる押えば
ね、１５はメッキ配線を形成しようとする被メッキ部分
を有する半導体ウエハー、１６はメッキ液の流れ状況を
示す。The support portions 12a are provided at three to four locations at regular intervals along the opening diameter of the plated portion main body 11. 1
Reference numeral 3 denotes a so-called anode electrode section which serves as a positive (+) electrode during plating, and has a net-like body 13a disposed within the plating section main body 11, facing the surface to be plated of the semiconductor wafer 15. 14 is a pressing spring that presses the semiconductor wafer onto the support portion 12a and connects the semiconductor wafer to the cathode electrode 12; 15 is a semiconductor wafer having a plated portion on which plated wiring is to be formed; and 16 is a spring for controlling the flow of the plating solution. show.
上記メッキ装置を用いて、半導体ウエハー１５の表面被
メッキ部分にメッキ配線を形成しようとEndpage:1
するときには以下にのべるような欠点があった。When using the above-mentioned plating apparatus to form plating wiring on the surface of the semiconductor wafer 15 to be plated, there were the following drawbacks.
すなわち、
（１）ウエハーの裏面側にメッキ液が廻り込み、正常な
メッキが防げられ、不用なメッキ金属がウエハーの裏面
に付着する。That is, (1) the plating solution flows around to the back side of the wafer, preventing normal plating and causing unnecessary plating metal to adhere to the back side of the wafer.
（２）カソード電極とウエハーのメッキ面との接触不良
が生じ易く、かつ電極の劣化がはげしい。これは、ウエ
ハーが、メッキ液中で電極を兼ねる針状の支持体上に支
えられてカソード電極と、ウエハーのメッキ面との節食
が行なわれるほか、支持体にメッキ金属が付着し、また
支持体がメッキマスク材であるホトレジストで汚される
などの理由による。(2) Poor contact between the cathode electrode and the plated surface of the wafer is likely to occur, and the electrode is subject to rapid deterioration. This is because the wafer is supported in the plating solution on a needle-shaped support that also serves as an electrode, and the cathode electrode and the plated surface of the wafer are not eroded, and the plating metal adheres to the support, and the support This is due to reasons such as the body being contaminated with photoresist, which is a plating mask material.
（３）さらに劣化したしたカソード電極からはメッキ電
流の一部が漏れ電流となる。(3) Part of the plating current becomes a leakage current from the further deteriorated cathode electrode.
いじょう（１）〜（３）の理由によって従来装置では半
導体ウエハー表面の被メッキ面へ正常なメッキが行なわ
ないという欠点があった。Due to reasons (1) to (3), the conventional apparatus has a drawback in that the surface to be plated on the surface of a semiconductor wafer cannot be properly plated.
本発明は上記問題点を解消するもので、アノード電極部
の網状体を設置したメッキ部本体の開口縁に半導体ウエ
ハーの支持部を設け、該支持部上に載置された半導体ウ
エハーの非メッキ面となる上面にカソード電極を設置し
、該カソード電極にばね材を用いて半導体ウエハーを支
持部上に圧下させるようにしたことを特徴とするもので
ある。The present invention solves the above-mentioned problems by providing a supporting part for the semiconductor wafer on the opening edge of the plating part main body in which the net-like body of the anode electrode part is installed, and non-plating of the semiconductor wafer placed on the supporting part. The device is characterized in that a cathode electrode is installed on the upper surface, and a spring material is used for the cathode electrode to lower the semiconductor wafer onto the support portion.
以下本発明の実施例を第２図によって説明する。An embodiment of the present invention will be described below with reference to FIG.
第２図において、２１はテフロン等よりなるメッキ部本
体、２３はメッキ時の正（＋）電極となるアノード電極
部で、半導体ウエハーの被メッキ面に対向させて本体２
１内に設置された網状体２３ａを有している点は従来と
同じである。本体２１の上部に、本体２１の内周面より
外周面に向けて下傾する傾斜上の排液孔２１ａを開口し
、本体１の開口縁には、一定間隔を置いて３〜４個所に
ウエハー支持部２７を設ける。２５はメッキ配線を形成
しようとする半導体ウエハーで、被メッキ部分を網２３
ａに向き合わせて半導体ウエハー２５を支持部２７上に
載置する。本発明においては、半導体ウエハー２５の上
面（非メッキ面）上にメッキ時の負（−）電極となるカ
ソード電極２２を設置するものである。このカソード電
極２２は第１図に示すウエハー押えばね１４の機能をも
兼ねるもので、ばね材からなり、半導体ウエハー２５の
上面を押圧してこれを支持部２７，２７…上に圧着させ
る。In FIG. 2, 21 is the main body of the plating part made of Teflon or the like, and 23 is the anode electrode part which becomes the positive (+) electrode during plating.
The present invention is the same as the conventional one in that it has a net-like body 23a installed in the interior of the present invention. In the upper part of the main body 21, drain holes 21a are formed on an inclined surface, which is inclined downward from the inner circumferential surface of the main body 21 toward the outer circumferential surface. A wafer support section 27 is provided. 25 is a semiconductor wafer on which plated wiring is to be formed, and the portion to be plated is covered with a net 23.
The semiconductor wafer 25 is placed on the support part 27 facing a. In the present invention, a cathode electrode 22 that serves as a negative (-) electrode during plating is installed on the upper surface (non-plated surface) of the semiconductor wafer 25. This cathode electrode 22 also has the function of the wafer pressing spring 14 shown in FIG. 1, and is made of a spring material and presses the upper surface of the semiconductor wafer 25 to press it onto the supporting parts 27, 27, . . . .
図中２６はメッキ液の流れの方向を示すものである。す
なわち、メッキ液はメッキ部本体２１の下部流入口２８
より本体２１内に直流し、上部に開口された排液孔２１
ａより外部へ流出する。In the figure, 26 indicates the direction of flow of the plating solution. That is, the plating solution flows through the lower inlet 28 of the plating section main body 21.
Direct current flows into the main body 21 through a drainage hole 21 opened at the top.
It flows out from a.
電極間に通電し、半導体ウエハー２５の下面（被メッキ
面）にメッキ処理を施す場合において、本発明によれば
、メッキ液がウエハー２５に近接してその直下の排液孔
２１ａの傾斜面に沿って流出するため、液の表面張力、
粘性、メッキ液の流量によって従来問題となっていたウ
エハーの上面（非メッキ面）へのメッキ液の廻り込みが
なくなり。非メッキ面にメッキ金属が付着せず、正常な
メッキ処理が可能となる。また、カソード電極を半導体
ウエハーの上方、すなわち、メッキ液外に設置したため
、カソード電極がメッキ液中で半導体ウエハーに接触す
ることによって生ずる問題点、たとえば接触不良、電極
の劣化などの欠点を解消することができるばかりではな
く、カソード電極と、ウエハーとを面接触させることが
可能となり、確実な接触によってメッキ処理を行なうこ
とができ、またメッキ電流の漏れをなくすることができ
る。According to the present invention, when plating the lower surface (surface to be plated) of the semiconductor wafer 25 by applying current between the electrodes, the plating solution is brought close to the wafer 25 and flows onto the inclined surface of the drain hole 21a directly below the wafer 25. Because the liquid flows out along the surface tension of the liquid,
This eliminates the problem of the plating solution flowing around the top surface (non-plated surface) of the wafer, which was a problem in the past due to the viscosity and flow rate of the plating solution. Plating metal does not adhere to non-plated surfaces, allowing normal plating processing. In addition, since the cathode electrode is placed above the semiconductor wafer, that is, outside the plating solution, problems caused by the cathode contacting the semiconductor wafer in the plating solution, such as poor contact and electrode deterioration, are eliminated. In addition, it is possible to bring the cathode electrode and the wafer into surface contact, and plating can be performed through reliable contact, and leakage of plating current can be eliminated.
本発明において、半導体ウエハーの被メッキ面の裏側よ
りカソード電極を取り出す場合に、通常半導体ウエハー
の非メッキ面（裏面）は接触領域となるため、半導体ウ
エハーをチップ上に固形化する部分を活用し、メッキ工
程以前のウエハー製造工程でウエハーの被メッキ面（表
面）からウエハーの裏面に至るメッキ専用の電流経路の
精製をＩＣ回路に設置を取る製造手法に準じて行なえば
、簡単に半導体ウエハーの裏面よりカソード電極を取り
出すことができる。In the present invention, when the cathode electrode is taken out from the back side of the surface to be plated of the semiconductor wafer, the non-plated surface (back surface) of the semiconductor wafer is usually the contact area, so the part where the semiconductor wafer is solidified on the chip is utilized. In the wafer manufacturing process before the plating process, if the current path dedicated to plating from the surface to be plated (front side) of the wafer to the back side of the wafer is refined according to the manufacturing method that requires installation in the IC circuit, semiconductor wafers can be easily manufactured. The cathode electrode can be taken out from the back side.
以上のように本発明によれば半導体ウエハーの表面に配
線材料としての金属を性能よく電解メッキ形成をするこ
とができる効果を有するものである。As described above, according to the present invention, it is possible to electrolytically plate metal as a wiring material on the surface of a semiconductor wafer with good performance.
Endpage:2Endpage:2
第１図は従来の半導体メッキ装置の縦断面図、第２図は
本発明装置の一実施例を示す縦断面図である。
２１…メッキ部本体
２２…カソード電極部
２２ａ…網状体
２３…アノード電極部
２５…半導体ウエハー
２７…ウエハー支持部
特許出願人 日本電気株式会社
代理人 弁理士 菅野中
Endpage:3FIG. 1 is a longitudinal sectional view of a conventional semiconductor plating apparatus, and FIG. 2 is a longitudinal sectional view showing an embodiment of the apparatus of the present invention. 21...Plating part main body 22...Cathode electrode part 22a...Mesh body 23...Anode electrode part 25...Semiconductor wafer 27...Wafer support part Patent applicant NEC Corporation Agent Patent attorney Naka KannoEndpage:3
Claims (1)
の開口縁に半導体ウエハーの支持部を設け、該支持部上
に載置された半導体ウエハーの非メッキ面となる上面に
カソード電極を設置し、該カソード電極にばね材を用い
て半導体ウエハーを支持部上に圧下させるようにしたこ
とを特徴とする半導体ウエハーのメッキ装置。(1) A supporting part for the semiconductor wafer is provided on the opening edge of the plating part main body where the net-like body of the anode electrode part is installed, and a cathode electrode is installed on the upper surface, which is the non-plated surface, of the semiconductor wafer placed on the supporting part. A semiconductor wafer plating apparatus characterized in that a spring material is used for the cathode electrode to lower the semiconductor wafer onto the support part.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12717981A JPS5828829A (en) | 1981-08-13 | 1981-08-13 | Semiconductor wafer plating apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12717981A JPS5828829A (en) | 1981-08-13 | 1981-08-13 | Semiconductor wafer plating apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5828829A true JPS5828829A (en) | 1983-02-19 |
Family
ID=14953621
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12717981A Pending JPS5828829A (en) | 1981-08-13 | 1981-08-13 | Semiconductor wafer plating apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5828829A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4906346A (en) * | 1987-02-23 | 1990-03-06 | Siemens Aktiengesellschaft | Electroplating apparatus for producing humps on chip components |
-
1981
- 1981-08-13 JP JP12717981A patent/JPS5828829A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4906346A (en) * | 1987-02-23 | 1990-03-06 | Siemens Aktiengesellschaft | Electroplating apparatus for producing humps on chip components |
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