JPH0657497A - Wafer plating device - Google Patents

Wafer plating device

Info

Publication number
JPH0657497A
JPH0657497A JP23261192A JP23261192A JPH0657497A JP H0657497 A JPH0657497 A JP H0657497A JP 23261192 A JP23261192 A JP 23261192A JP 23261192 A JP23261192 A JP 23261192A JP H0657497 A JPH0657497 A JP H0657497A
Authority
JP
Japan
Prior art keywords
plating
wafer
cup
rubber sheet
cathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP23261192A
Other languages
Japanese (ja)
Other versions
JP3206131B2 (en
Inventor
Takeshi Wakabayashi
猛 若林
Koji Watanabe
孝次 渡辺
Koichi Kanai
孝一 金井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Casio Computer Co Ltd
Original Assignee
Casio Computer Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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Application filed by Casio Computer Co Ltd filed Critical Casio Computer Co Ltd
Priority to JP23261192A priority Critical patent/JP3206131B2/en
Publication of JPH0657497A publication Critical patent/JPH0657497A/en
Application granted granted Critical
Publication of JP3206131B2 publication Critical patent/JP3206131B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)
  • Electroplating Methods And Accessories (AREA)

Abstract

PURPOSE:To avoid contact of a cathode with a plating soln. CONSTITUTION:A cathode 9 is placed on the upper surface of an annular rubber sheet 21 provided on the upper surface of a cup 2 into which a plating soln. 4 is jetted with the end positioned outside at a specified distance from the inner peripheral end of the sheet 21. A plating connecting terminal provided on the surface of a wafer 11 to be plated is brought into contact with the cathode 9, almost all the periphery of the surface to be plated is firmly attached to the upper surface of the sheet 21, hence the clearance is liq.-tightly sealed, the soln. 4 does not flow out of the clearance, and the cathode 9 is completely out of contact with the soln. 4. The soln. 4 in the cup 2 is recovered in a plating tank 1 through many plating soln. outlet holes 22 radially furnished in the upper wall of the cup 2.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】この発明は半導体ウエハにメッキ
を施すためのウエハ用メッキ装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer plating apparatus for plating a semiconductor wafer.

【0002】[0002]

【従来の技術】例えば、半導体ウエハ(以下、単にウエ
ハという)にバンプ電極を形成する場合、ウエハのバン
プ電極形成面(被メッキ面)にメッキレジスト層を形成
し、このメッキレジスト層をエッチングして開口を形成
することにより、この開口を介してパッド部を露出さ
せ、この露出したパッド部にウエハ用メッキ装置を用い
て金等のメッキを施し、この施したメッキによってバン
プ電極を形成している。
2. Description of the Related Art For example, when a bump electrode is formed on a semiconductor wafer (hereinafter simply referred to as a wafer), a plating resist layer is formed on the bump electrode forming surface (surface to be plated) of the wafer, and the plating resist layer is etched. By forming an opening by exposing the pad portion through the opening, the exposed pad portion is plated with gold or the like by using a wafer plating device, and the bump electrode is formed by the plating. There is.

【0003】図2(A)、(B)はこのような場合に用
いられている従来のウエハ用メッキ装置を示したもので
ある。このウエハ用メッキ装置では、メッキ槽1内にカ
ップ2が設けられている。メッキ槽1とカップ2とは液
路3によって連通されている。液路3には、メッキ槽1
内に収容されているメッキ液(イオン化された金を含
む)4をカップ2内に噴流させるための噴流ポンプ5が
介在されている。カップ2内の底部には網状のアノード
電極6が設けられている。アノード電極6はリード線7
を介して図示しない電源装置の陽極に接続されている。
カップ2の上面の等間隔ずつ離間する所定の3個所に
は、所定の3辺にメッキ液遮断壁8aを有する平面ほぼ
方形状のメッキ液遮断部材8が設けられている。メッキ
液遮断部材8内には、内側にウエハ載置壁9aを有する
側面ほぼU字状のカソード電極9が設けられている。カ
ソード電極9のウエハ載置壁9aはメッキ液遮断部材8
のメッキ液遮断壁8aよりも若干上方に突出されてい
る。カソード電極9はリード線10を介して電源装置の
陰極に接続されている。3つのカソード電極9のウエハ
載置壁9aにはウエハ11が載置されている。ウエハ1
1は、詳細には図示していないが、既に説明したよう
に、バンプ電極形成面(図2(A)において下面)に形
成された図示しないメッキレジスト層に開口が形成され
ていることにより、この開口を介してパッド部が露出さ
れ、さらにカソード電極9のウエハ載置壁9aと接触す
る部分に図示しないメッキ用接続端子が設けられた構造
となっている。ウエハ11は、メッキ槽1に取り付けら
れた上蓋12の下面に設けられた板バネ13によって押
え付けられている。
2A and 2B show a conventional wafer plating apparatus used in such a case. In this wafer plating apparatus, a cup 2 is provided in the plating tank 1. The plating tank 1 and the cup 2 are connected by a liquid path 3. The plating tank 1 is provided in the liquid passage 3.
A jet pump 5 for jetting a plating liquid (including ionized gold) 4 contained therein into the cup 2 is interposed. A net-shaped anode electrode 6 is provided on the bottom of the cup 2. Anode electrode 6 is lead wire 7
Is connected to the anode of a power supply device not shown.
Plating solution blocking members 8 having a substantially rectangular shape in a plane having plating solution blocking walls 8a on predetermined three sides are provided at predetermined three locations on the upper surface of the cup 2 that are spaced at equal intervals. Inside the plating liquid blocking member 8, a cathode electrode 9 having a substantially U-shaped side surface and having a wafer mounting wall 9a inside is provided. The wafer mounting wall 9 a of the cathode electrode 9 has a plating liquid blocking member 8
Of the plating liquid blocking wall 8a. The cathode electrode 9 is connected to the cathode of the power supply device via the lead wire 10. A wafer 11 is mounted on the wafer mounting walls 9 a of the three cathode electrodes 9. Wafer 1
1 is not shown in detail, but as described above, the opening is formed in the plating resist layer (not shown) formed on the bump electrode formation surface (the lower surface in FIG. 2A), The pad portion is exposed through this opening, and a plating connection terminal (not shown) is provided at the portion of the cathode electrode 9 that contacts the wafer mounting wall 9a. The wafer 11 is pressed by a leaf spring 13 provided on the lower surface of an upper lid 12 attached to the plating tank 1.

【0004】そして、このウエハ用メッキ装置の噴流ポ
ンプ5が駆動すると、メッキ槽1内に収容されているメ
ッキ液4がアノード電極6を通過してカップ2内に噴流
され、ウエハ11の下面に噴き付けられる。このとき、
アノード電極6とカソード電極9との間にメッキ電流を
流すと、ウエハ11の下面に露出したパッド部に金メッ
キが施され、この施された金メッキによってバンプ電極
が形成される。ウエハ11の下面に噴き付けられたメッ
キ液4は、特に図2(B)において矢印で示すように、
3つのメッキ液遮断部材8を除くカップ2の上端部から
外側にオーバーフローして流れ落ち、メッキ槽1内に回
収される。この場合、メッキ液4が3つのメッキ液遮断
部材8を除くカップ2の上端部から外側に流れ落ちるよ
うにしているのは、1つは、ウエハ11の下面に常に新
しいメッキ液4を供給するとともに、ウエハ11の下面
に接触しているメッキ液4中の気泡を除去してメッキ不
良が発生するのを防止するためである。もう1つは、メ
ッキ液遮断部材8のメッキ液遮断壁8aによってメッキ
液4がメッキ液遮断部材8内に流れ込むのを防止し、こ
れによりメッキ液遮断部材8内に設けたカソード電極9
がメッキ液4と接触してこのカソード電極9がメッキさ
れるのを防止し、ひいてはメッキ液4中の高価な金(メ
ッキ金属)が無駄に消費されるのを防止するためであ
る。
When the jet pump 5 of the wafer plating apparatus is driven, the plating solution 4 contained in the plating tank 1 passes through the anode electrode 6 and is jetted into the cup 2 to reach the lower surface of the wafer 11. Be sprayed. At this time,
When a plating current is passed between the anode electrode 6 and the cathode electrode 9, the pad portion exposed on the lower surface of the wafer 11 is gold-plated, and the bump electrode is formed by this gold plating. The plating liquid 4 sprayed on the lower surface of the wafer 11 is, as shown by an arrow in FIG.
It overflows from the upper end of the cup 2 excluding the three plating liquid blocking members 8 to the outside, flows down, and is collected in the plating tank 1. In this case, the plating liquid 4 is made to flow outward from the upper end of the cup 2 excluding the three plating liquid blocking members 8 is that the new plating liquid 4 is always supplied to the lower surface of the wafer 11. This is to remove bubbles in the plating solution 4 contacting the lower surface of the wafer 11 to prevent defective plating. The other is to prevent the plating solution 4 from flowing into the plating solution blocking member 8 by the plating solution blocking wall 8a of the plating solution blocking member 8, and thereby to prevent the cathode electrode 9 provided in the plating solution blocking member 8.
Is to prevent the cathode electrode 9 from being plated by coming into contact with the plating solution 4, and thus to prevent the expensive gold (plating metal) in the plating solution 4 from being wasted.

【0005】[0005]

【発明が解決しようとする課題】しかしながら、従来の
このようなウエハ用メッキ装置では、メッキ液遮断部材
8内に設けたカソード電極9のウエハ載置壁9aにウエ
ハ11を載置して、ウエハ11のメッキ用接続端子とカ
ソード電極9とを導通させているので、メッキ液遮断部
材8のメッキ液遮断壁8aの上面とウエハ11の下面と
の接触を避けるために、その間に若干の例えば0.2〜
0.3mm程度の隙間を設ける必要があり、一方、カッ
プ2内で噴流されるメッキ液4の液面がウエハ11の下
面に接触しており、したがってメッキ液4が上述した隙
間を介してメッキ液遮断部材8内に流出するのを完全に
防止することができず、メッキ液遮断部材8内に流出し
たメッキ液4によってカソード電極9がメッキされてし
まうことがあるという問題があった。この発明の目的
は、カソード電極がメッキ液と全く接触しないようにす
ることのできるウエハ用メッキ装置を提供することにあ
る。
However, in such a conventional wafer plating apparatus, the wafer 11 is mounted on the wafer mounting wall 9a of the cathode electrode 9 provided in the plating liquid blocking member 8 and the wafer 11 is mounted on the wafer mounting wall 9a. Since the plating connection terminal 11 and the cathode electrode 9 are electrically connected to each other, in order to avoid contact between the upper surface of the plating solution blocking wall 8a of the plating solution blocking member 8 and the lower surface of the wafer 11, a small amount of, for example, 0 .2-
It is necessary to provide a gap of about 0.3 mm, while the liquid surface of the plating liquid 4 jetted in the cup 2 is in contact with the lower surface of the wafer 11, and therefore the plating liquid 4 is plated through the gap described above. There is a problem in that it is impossible to completely prevent the liquid from flowing into the liquid blocking member 8, and the cathode electrode 9 may be plated by the plating liquid 4 that has flowed into the plating liquid blocking member 8. An object of the present invention is to provide a wafer plating apparatus capable of preventing the cathode electrode from coming into contact with the plating solution at all.

【0006】[0006]

【課題を解決するための手段】この発明は、メッキ液が
噴流されるカップと、このカップの上壁部に放射状に設
けられた多数のメッキ液流出孔と、前記カップの上面に
設けられたリング状のゴムシートと、端部がこのゴムシ
ートの内周端よりも所定の距離だけ外側に位置した状態
で、前記ゴムシートの上面に設けられたカソード電極と
を具備し、ウエハの被メッキ面に設けられたメッキ用接
続端子を前記カソード電極に接触させた状態で、該被メ
ッキ面のほぼ周囲を前記ゴムシートの上面に密接させる
ようにしたものである。
According to the present invention, a cup into which a plating solution is jetted, a large number of plating solution outflow holes radially provided on an upper wall portion of the cup, and an upper surface of the cup are provided. A ring-shaped rubber sheet and a cathode electrode provided on the upper surface of the rubber sheet in a state where the end portion is located outside the inner peripheral edge of the rubber sheet by a predetermined distance. With the connection terminal for plating provided on the surface being in contact with the cathode electrode, almost the periphery of the surface to be plated is brought into close contact with the upper surface of the rubber sheet.

【0007】[0007]

【作用】この発明によれば、ウエハの被メッキ面のほぼ
周囲がゴムシートの上面に密接し、その間が液密状態と
なるので、この間からメッキ液が流出することがなく、
したがってカソード電極がメッキ液と全く接触しないよ
うにすることができる。
According to the present invention, substantially the periphery of the surface to be plated of the wafer is in close contact with the upper surface of the rubber sheet, and the space between them is liquid-tight, so that the plating solution does not flow out from this area.
Therefore, the cathode electrode can be prevented from coming into contact with the plating solution at all.

【0008】[0008]

【実施例】図1(A)、(B)はこの発明の一実施例に
おけるウエハ用メッキ装置を示したものである。これら
の図において、図2(A)、(B)と同一名称部分には
同一の符号を付し、その説明を適宜省略する。このウエ
ハ用メッキ装置では、カップ2の上面にリング状のゴム
シート21が設けられている。ゴムシート21の厚さは
無負荷の状態で全体にわたって均一であって、1.0〜
1.5mm程度となっている。ゴムシート21の上面の
等間隔ずつ離間する所定の3個所には、側面ほぼL字状
のカソード電極9がその端部をゴムシート21の内周端
よりも所定の距離だけ外側に位置させられた状態で設け
られている。カソード電極9は厚さ0.1〜0.3mm
程度の白金板からなっている。カップ2の上壁部の等間
隔ずつ離間する多数の個所には、図2(B)において一
部の図示を省略しているが、メッキ液流出孔22が放射
状に設けられている。メッキ液流出孔22は内側から外
側に向かって斜め下方に30〜60°程度の角度で傾斜
されている。メッキ液流出孔22の内端開口部とカップ
2の上面との間隔は、0が望ましいが、強度の関係上、
0.5〜1.0mm程度となっている。
1 (A) and 1 (B) show a wafer plating apparatus in an embodiment of the present invention. In these figures, parts having the same names as those in FIGS. 2A and 2B are designated by the same reference numerals, and the description thereof will be omitted as appropriate. In this wafer plating apparatus, a ring-shaped rubber sheet 21 is provided on the upper surface of the cup 2. The thickness of the rubber sheet 21 is uniform over the whole in an unloaded state,
It is about 1.5 mm. Cathode electrodes 9 each having a substantially L-shaped side surface are disposed at predetermined three positions on the upper surface of the rubber sheet 21 that are spaced apart from each other by a predetermined distance from the inner peripheral end of the rubber sheet 21. It is provided in a closed state. The cathode electrode 9 has a thickness of 0.1 to 0.3 mm
It consists of a platinum plate. Although a part of the illustration is omitted in FIG. 2 (B), the plating solution outflow holes 22 are radially provided at a large number of places on the upper wall of the cup 2 that are equally spaced apart. The plating solution outflow hole 22 is inclined obliquely downward from the inside to the outside at an angle of about 30 to 60 °. The distance between the inner end opening of the plating solution outflow hole 22 and the upper surface of the cup 2 is preferably 0, but in terms of strength,
It is about 0.5 to 1.0 mm.

【0009】さて、このウエハ用メッキ装置を用いてウ
エハ11に金メッキからなるバンプ電極を形成する場合
には、まず、上蓋12を取り外し、ウエハ11をそのバ
ンプ電極形成面を下側にして位置決めした状態でゴムシ
ート21上における3つのカソード電極9の上に載置す
る。次に、上蓋12をメッキ槽1に取り付け、上蓋12
の下面に設けられた板バネ13によってウエハ11を押
え付ける。すると、ウエハ11がカソード電極9を押え
付けることにより、カソード電極9がゴムシート21に
これを弾性変形させつつ食い込み、ウエハ11の下面の
ほぼ周囲がゴムシート21の上面に密接する状態とな
る。したがって、この状態では、ウエハ11の下面に設
けられたメッキ用接続端子がカソード電極9に確実に接
触され、確実な電気的接続が得られる。また、ウエハ1
1の下面がゴムシート21の上面に密接することによ
り、その間が液密状態となる。
When forming bump electrodes made of gold plating on the wafer 11 using this wafer plating apparatus, first, the upper lid 12 is removed and the wafer 11 is positioned with its bump electrode forming surface facing downward. In this state, it is placed on the three cathode electrodes 9 on the rubber sheet 21. Next, the upper lid 12 is attached to the plating tank 1, and the upper lid 12
The wafer 11 is pressed by the leaf spring 13 provided on the lower surface of the wafer. Then, the wafer 11 presses the cathode electrode 9 so that the cathode electrode 9 bites into the rubber sheet 21 while elastically deforming it, and the lower surface of the wafer 11 is in close contact with the upper surface of the rubber sheet 21. Therefore, in this state, the plating connection terminal provided on the lower surface of the wafer 11 is surely brought into contact with the cathode electrode 9, and a reliable electrical connection is obtained. Also, the wafer 1
The lower surface of 1 is brought into close contact with the upper surface of the rubber sheet 21 so that a liquid-tight state is provided between them.

【0010】この状態で、噴流ポンプ5が駆動すると、
メッキ槽1内に収容されているメッキ液4がアノード電
極6を通過してカップ2内に噴流され、ウエハ11の下
面に噴き付けられる。このとき、アノード電極6とカソ
ード電極9との間にメッキ電流を流すと、ウエハ11の
下面に露出したパッド部に金メッキが施され、この施さ
れた金メッキによってバンプ電極が形成される。ウエハ
11の下面に噴き付けられたメッキ液4は、多数のメッ
キ液流出孔22を介してメッキ槽1内に回収される。こ
の場合、多数のメッキ液流出孔22からメッキ液4が流
出するので、従来のオーバーフローと同等の効果が得ら
れ、ウエハ11の下面に常に新しいメッキ液4を供給す
ることができるとともに、ウエハ11の下面に接触して
いるメッキ液4中の気泡を除去してメッキ不良が発生す
るのを防止することができる。また、ウエハ11の下面
のほぼ周囲がゴムシート21の上面に密接し、その間が
液密状態となっているので、この間からメッキ液4が流
出することがなく、しかもカソード電極9の端部がゴム
シート21の内周端よりも所定の距離だけ外側に位置さ
せられているので、カソード電極9がメッキ液4と全く
接触しないようにすることができる。
When the jet pump 5 is driven in this state,
The plating solution 4 contained in the plating tank 1 passes through the anode electrode 6 and is jetted into the cup 2 to be jetted onto the lower surface of the wafer 11. At this time, when a plating current is passed between the anode electrode 6 and the cathode electrode 9, the pad portion exposed on the lower surface of the wafer 11 is gold-plated, and the bump electrode is formed by this gold plating. The plating solution 4 sprayed on the lower surface of the wafer 11 is collected in the plating tank 1 through the numerous plating solution outflow holes 22. In this case, since the plating solution 4 flows out from a large number of the plating solution outflow holes 22, the same effect as the conventional overflow can be obtained, and the new plating solution 4 can always be supplied to the lower surface of the wafer 11 and the wafer 11 can be supplied. The bubbles in the plating solution 4 contacting the lower surface of the plate can be removed to prevent defective plating. Further, since the periphery of the lower surface of the wafer 11 is in close contact with the upper surface of the rubber sheet 21 and the space between them is in a liquid-tight state, the plating solution 4 does not flow out during this period, and the end portion of the cathode electrode 9 is Since the rubber sheet 21 is positioned outside by a predetermined distance from the inner peripheral edge of the rubber sheet 21, the cathode electrode 9 can be prevented from coming into contact with the plating solution 4 at all.

【0011】[0011]

【発明の効果】以上説明したように、この発明によれ
ば、ウエハの被メッキ面のほぼ周囲をゴムシートの上面
に密接させ、その間を液密状態としているので、この間
からメッキ液が流出することがなく、したがってカソー
ド電極がメッキ液と全く接触しないようにすることがで
き、ひいてはメッキ金属の無駄な消費を皆無とすること
ができる。
As described above, according to the present invention, the periphery of the surface to be plated of the wafer is brought into close contact with the upper surface of the rubber sheet, and the space between them is kept liquid-tight, so that the plating liquid flows out from this interval. Therefore, it is possible to prevent the cathode electrode from coming into contact with the plating solution at all, and it is possible to eliminate unnecessary consumption of the plating metal.

【図面の簡単な説明】[Brief description of drawings]

【図1】(A)はこの発明の一実施例におけるウエハ用
メッキ装置の断面図、(B)はその一部の平面図。
FIG. 1A is a sectional view of a wafer plating apparatus according to an embodiment of the present invention, and FIG. 1B is a plan view of a part thereof.

【図2】(A)は従来のウエハ用メッキ装置の断面図、
(B)はその一部の平面図。
FIG. 2A is a cross-sectional view of a conventional wafer plating apparatus,
(B) is a plan view of a part thereof.

【符号の説明】[Explanation of symbols]

1 メッキ槽 2 カップ 4 メッキ液 5 噴流ポンプ 6 アノード電極 9 カソード電極 11 ウエハ 21 ゴムシート 22 メッキ液流出孔 1 Plating Tank 2 Cup 4 Plating Liquid 5 Jet Pump 6 Anode Electrode 9 Cathode Electrode 11 Wafer 21 Rubber Sheet 22 Plating Liquid Outflow Hole

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 メッキ液が噴流されるカップと、 このカップの上壁部に放射状に設けられた多数のメッキ
液流出孔と、 前記カップの上面に設けられたリング状のゴムシート
と、 端部がこのゴムシートの内周端よりも所定の距離だけ外
側に位置した状態で、前記ゴムシートの上面に設けられ
たカソード電極とを具備し、 ウエハの被メッキ面に設けられたメッキ用接続端子を前
記カソード電極に接触させた状態で、該被メッキ面のほ
ぼ周囲を前記ゴムシートの上面に密接させるようにした
ことを特徴とするウエハ用メッキ装置。
1. A cup into which a plating solution is jetted, a large number of plating solution outflow holes radially provided on an upper wall portion of the cup, a ring-shaped rubber sheet provided on an upper surface of the cup, and an end. And a cathode electrode provided on the upper surface of the rubber sheet in a state in which the portion is located outside the inner peripheral edge of the rubber sheet by a predetermined distance, and a plating connection provided on the surface to be plated of the wafer. A wafer plating apparatus, wherein substantially the periphery of the surface to be plated is brought into close contact with the upper surface of the rubber sheet while the terminal is in contact with the cathode electrode.
JP23261192A 1992-08-10 1992-08-10 Wafer plating equipment Expired - Fee Related JP3206131B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23261192A JP3206131B2 (en) 1992-08-10 1992-08-10 Wafer plating equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23261192A JP3206131B2 (en) 1992-08-10 1992-08-10 Wafer plating equipment

Publications (2)

Publication Number Publication Date
JPH0657497A true JPH0657497A (en) 1994-03-01
JP3206131B2 JP3206131B2 (en) 2001-09-04

Family

ID=16942060

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23261192A Expired - Fee Related JP3206131B2 (en) 1992-08-10 1992-08-10 Wafer plating equipment

Country Status (1)

Country Link
JP (1) JP3206131B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999045170A1 (en) * 1998-03-02 1999-09-10 Ebara Corporation Substrate plating device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102287717B1 (en) 2019-08-20 2021-08-09 전찬우 Holder for smart device and book

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999045170A1 (en) * 1998-03-02 1999-09-10 Ebara Corporation Substrate plating device
US6582580B1 (en) 1998-03-02 2003-06-24 Ebara Corporation Substrate plating apparatus

Also Published As

Publication number Publication date
JP3206131B2 (en) 2001-09-04

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