JPH06196520A - 半導体装置のワイヤボンディング方法 - Google Patents

半導体装置のワイヤボンディング方法

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Publication number
JPH06196520A
JPH06196520A JP24A JP40147390A JPH06196520A JP H06196520 A JPH06196520 A JP H06196520A JP 24 A JP24 A JP 24A JP 40147390 A JP40147390 A JP 40147390A JP H06196520 A JPH06196520 A JP H06196520A
Authority
JP
Japan
Prior art keywords
capillary
bonding
outer periphery
junction part
adhesive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24A
Other languages
English (en)
Inventor
Keiichi Misawa
桂一 三沢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Yamagata Ltd
Original Assignee
NEC Yamagata Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Yamagata Ltd filed Critical NEC Yamagata Ltd
Priority to JP24A priority Critical patent/JPH06196520A/ja
Publication of JPH06196520A publication Critical patent/JPH06196520A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4899—Auxiliary members for wire connectors, e.g. flow-barriers, reinforcing structures, spacers, alignment aids
    • H01L2224/48996—Auxiliary members for wire connectors, e.g. flow-barriers, reinforcing structures, spacers, alignment aids being formed on an item to be connected not being a semiconductor or solid-state body
    • H01L2224/48997—Reinforcing structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H01L2224/78302—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

(57)【要約】 【構成】キャピラリ７の外周に円筒部７ａの外周と円筒
部７ａの間から接着剤もしくは絶縁性ペースト８をボン
ディングワイヤ４の接合部にディスペンスする。 【効果】ボンディングワイヤ接合部を接着剤で保護し接
合強度を高めることができる。

Description

【発明の詳細な説明】
【０００１】
【産業上の利用分野】本発明は半導体装置のワイヤボン
ディング方法に関する。
【０００２】
【従来の技術】従来の半導体装置のワイヤボンディング
方法は、図６に示す様に、キャピラリ５の中心を通した
直径３０μｍ程度のボンディングワイヤ４をまず半導体
素子１の外部接続用電極２にボンディングしたのち、キ
ャピラリ５を移動して、図７に示すように、リードフレ
ームのインナーリード３にボンディングしていた。
【０００３】
【発明が解決しようとする課題】上述した従来の半導体
装置のワイヤボンディング方法は、現状では低温ボンデ
ィング、信頼性の向上を目的に超音波併用熱圧着ボンデ
ィングが主流になっていいる。しかしながら量産工程で
の信頼性は、ボンダの高速化によりボンディング時の加
圧力、被接合面の表面状態等のバラツキ等により、ボン
ディングワイヤ接合部の接合強度を一定にすることが困
難である。また突発的な接合部の剥がれも発生し、必ず
しも信頼性が高いと言えないのが現状である。
【０００４】次に、最近銅合金リードフレームのコスト
低減を目的として、リードフレームのインナーリード３
の表面に銀鍍金属６を設けることを省略し、銅合金リー
ドフレームに直接ワイヤボンディングする技術（以下、
これをベアボンディングと言う。）が開発されている
が、インナーリードの酸化膜厚、表面粗度等の接合を阻
害する要因があり、特に多数ピンの半導体装置への適用
に関しては量産レベルに至っていない。
【０００５】
【課題を解決するための手段】本発明の半導体装置のワ
イヤボンディング方法は、キャピラリの外周に円筒部を
有し、前記キャピラリの外周と円筒部の間から接着剤、
または絶縁性ペーストを半導体素子の外部接続用電極部
およびインナーリードのボンディング接合部にディスペ
ンスするというものである。
【０００６】
【実施例】次に本発明の実施例について図面を参照して
説明する。
【０００７】図１〜図３は本発明の一実施例の説明に使
用する工程順断面図である。
【０００８】この実施例に使用するワイヤボンダのキャ
ピラリは、図４に示すように、その外周に円筒部７ａを
有している。キャピラリ７の外周と円筒７ａとの隙間７
ｂから接着剤もしくは絶縁性ペーストをディスペンスす
る。キャピラリ７の先端と円筒部７ａの先端は、ボンデ
ィング時の接着剤、または絶縁性ペーストの飛散を考慮
し、１０〜５００μｍ断差をつける。同様に、キャピラ
リ外周と円筒部のすき間は、１０〜２００μｍ程度とす
る。
【０００９】まず図１に示すように、半導体素子１の外
部接続用電極２にボンディングワイヤ４を接合し、溶融
状の接着剤もしくは絶縁性ペースト８をディスペンスす
る。その後、キャピラリ７を上昇させると、溶融状の接
着剤または絶縁性ペーストは、界面張力の作用により液
滴状になってボンディングワイヤ接合部を保護する。次
に、図２に示すように、キャピラリ７を移動させリード
フレームのインナーリード３にボンディングし、最後に
キャピラリを移動させると図３の状態になる。
【００１０】接着剤もしくは絶縁性ペーストとして、フ
ェノールボラックエポキシ樹脂にアミン系の硬化剤、最
大粒径３０μｍのシリカ（充填剤）、Ｎ−メチル−２−
ピロリドン（溶剤）、シラン系の充填剤表面処理剤をそ
れぞれ適量加えて混合し、粘度１００ｐｓのペーストを
用いた。硬化後の抵抗率は１０の１５乗オーム・センチ
メータである。
【００１１】この実施例ではインナーリード３に銀鍍金
属６を設けたものについて説明したが、図５に示すよう
に銀鍍金属６のないインナーリードへのベアボンディン
グに適用することも可能である。
【００１２】
【発明の効果】以上説明したように本発明は、キャピラ
リの外周に円筒部を設け、そのキャピラリの外周と円筒
部の間から接着剤もしくは絶縁性ペーストを半導体素子
の外部接続電極部と、インナーリードのボンディングワ
イヤ接合部にディスペンスすることにより、ボンディン
グ接合部を保護し接合部の接合強度を高めることができ
る。よって従来得られなかった、接合部の接合強度を制
御することが可能になり、しかも突発的な接合部の剥が
れも抑えることができ、量産工程に於いての信頼性は飛
躍的に向上できる効果がある。
【００１３】また、特に多数ピンに関して従来の実現が
困難であったベアボンディングについても、ボンディン
グワイヤ接合部を接着剤、または絶縁性ペーストで保護
することにより、安定した接合強度を得ることができ、
ベアボンディングが容易に実現できるという効果があ
る。
【図面の簡単な説明】
【図１】本発明の一実施例を説明するための断面図であ
る。
【図２】本発明の一実施例を説明するための断面図であ
る。
【図３】本発明の一実施例を説明するための断面図であ
る。
【図４】本発明で使用するキャピラリの断面図である。
【図５】本発明の一実施例の変形を説明するための断面
図である。
【図６】従来例を説明するための断面図である。
【図７】従来例を説明するための断面図である。
【符号の説明】
１ 半導体素子 ２ 外部接続用電極 ３ リードフレームのインナーリード ４ ボンディングワイヤ ５ 従来例で使用するキャピラリ ６ Ａｇ鍍金属 ７ 本発明で使用するキャピラリ ８ 接着剤または絶縁性ペースト ９ リードフレームの吊りピン

Claims (1)

    【特許請求の範囲】
  1. 【請求項１】 キャピラリの外周に円筒部を有し、前記
    キャピラリの外周と円筒部の間から接着剤もしくは絶縁
    性ペーストを半導体素子の外部接続用電極部およびイン
    ナーリードのボンディングワイヤ接合部にディスペンス
    することを特徴とする半導体装置のワイヤボンディング
    方法。
JP24A 1990-12-12 1990-12-12 半導体装置のワイヤボンディング方法 Pending JPH06196520A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24A JPH06196520A (ja) 1990-12-12 1990-12-12 半導体装置のワイヤボンディング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24A JPH06196520A (ja) 1990-12-12 1990-12-12 半導体装置のワイヤボンディング方法

Publications (1)

Publication Number Publication Date
JPH06196520A true JPH06196520A (ja) 1994-07-15

Family

ID=18511298

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24A Pending JPH06196520A (ja) 1990-12-12 1990-12-12 半導体装置のワイヤボンディング方法

Country Status (1)

Country Link
JP (1) JPH06196520A (ja)

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