JPH06192545A - Resin composition for semiconductor sealing use - Google Patents

Resin composition for semiconductor sealing use

Info

Publication number
JPH06192545A
JPH06192545A JP34458492A JP34458492A JPH06192545A JP H06192545 A JPH06192545 A JP H06192545A JP 34458492 A JP34458492 A JP 34458492A JP 34458492 A JP34458492 A JP 34458492A JP H06192545 A JPH06192545 A JP H06192545A
Authority
JP
Japan
Prior art keywords
resin
resin composition
filler
composition
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP34458492A
Other languages
Japanese (ja)
Other versions
JP3192255B2 (en
Inventor
Kenji Samejima
賢至 鮫島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Bakelite Co Ltd
Original Assignee
Sumitomo Bakelite Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Bakelite Co Ltd filed Critical Sumitomo Bakelite Co Ltd
Priority to JP34458492A priority Critical patent/JP3192255B2/en
Publication of JPH06192545A publication Critical patent/JPH06192545A/en
Application granted granted Critical
Publication of JP3192255B2 publication Critical patent/JP3192255B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PURPOSE:To provide a composition excellent in the package crack prevention in its reflowing, thus useful for semiconductor packages, comprising, as the main component, a composition made up of an epoxy resin, phenol novolak resin, curing promoter and inorganic filler, and a specific polyimide resin as a filler. CONSTITUTION:The composition comprising (A) as the main component, a composition made up of (1) a epoxy resin, (2) a phenol novolak resin, (3) a curing promoter (e.g. a tertiary amine, imidazole) and (4) an inorganic filler (e.g. crystalline silica, alumina) and (B) as a second filler, 1-20wt.%, based on the whole amount of the final composition, of a polyimide resin (obtained by reaction between a compound of formula I and a compound of formula II at the molar ratio of 1:1) in the form of spherical particles 20-70mum in mean particle diameter and <=150mum in the maximum particle diameter, having a hollow accounting for 20-80vol.% of the volume of the particle itself inside, with a softening point of 200-240 deg.C.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は半導体封止用樹脂組成物
に関するものであり、特にトランジスター、IC,LS
I等の半導体をトランスファー成形により封止する高信
頼性の半導体封止用樹脂組成物に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin composition for semiconductor encapsulation, and particularly to transistors, ICs, LSs.
The present invention relates to a highly reliable semiconductor encapsulating resin composition for encapsulating a semiconductor such as I by transfer molding.

【0002】[0002]

【従来の技術】トランジスター、IC,LSI等の半導
体素子の封止方法としてエポキシ樹脂のトランスファー
成形による方法が低コスト、大量生産に適した方法とし
て採用され、信頼性の面でもエポキシ樹脂の日進月歩の
改良により十分使用に耐えるレベルにある。しかし、エ
レクトロニクス製品の軽薄短小化の流れの中で、半導体
パッケージの表面実装という新しい実装方法が生まれ、
エポキシ樹脂封止半導体製品の信頼性の面で大きな問題
が生じている。即ち、回路基板への半導体パッケージの
半田付けの際、半導体パッケージを回路基板へ仮止め
後、リフロー処理で半田付けを行うため半導体パッケー
ジにリフロー時、非常に高い約240℃の温度条件が加
わり、そのため封止パッケージが吸湿水の熱膨張による
ダメージを受け、シリコンペレットと樹脂界面に隙間が
発生したり、パッケージ自体にクラックが発生したりし
て半導体製品の信頼性が著しく劣化する。
2. Description of the Related Art As a sealing method for semiconductor elements such as transistors, ICs and LSIs, a transfer molding method of epoxy resin has been adopted as a method suitable for low cost and mass production. It is at a level that can be used sufficiently by improvement. However, in the trend of making electronic products lighter, thinner, shorter and smaller, a new mounting method called surface mounting of semiconductor packages was born.
A major problem has arisen in the reliability of epoxy resin-sealed semiconductor products. That is, when the semiconductor package is soldered to the circuit board, after the semiconductor package is temporarily fixed to the circuit board and soldering is performed by reflow processing, a very high temperature condition of about 240 ° C. is added during reflow to the semiconductor package. As a result, the sealed package is damaged by the thermal expansion of the hygroscopic water, a gap is generated at the interface between the silicon pellet and the resin, and a crack is generated in the package itself, which significantly deteriorates the reliability of the semiconductor product.

【0003】従来、この問題を解決するためにエポキシ
樹脂を耐熱化したり(特開昭61−168620号公
報)、エポキシ樹脂に可撓性を付与したり(特開昭62
−115850,62−116654,62−1281
62,62−136860各号公報)という方法が提案
されているが、いずれも十分ではなくリフロー処理後の
半導体製品の信頼性を100%保証するレベルには到達
し得なかった。
Conventionally, in order to solve this problem, the epoxy resin is made heat resistant (Japanese Patent Laid-Open No. 168620/1986) or the epoxy resin is given flexibility (Japanese Patent Laid-Open No. 62-62160).
-11850, 62-116654, 62-1281
No. 62,62-136860), but none of them is sufficient and the level of 100% guarantee of the reliability of the semiconductor product after the reflow process cannot be reached.

【0004】[0004]

【発明が解決しようとする課題】本発明はかかる半導体
製品の表面実装化におけるリフロー処理後の信頼性劣化
を防止するための半導体封止用樹脂組成物を提供するも
のである。
SUMMARY OF THE INVENTION The present invention provides a resin composition for semiconductor encapsulation for preventing reliability deterioration after reflow treatment in surface mounting of such semiconductor products.

【0005】[0005]

【課題を解決するための手段】本発明は、エポキシ樹
脂、フェノールノボラック樹脂、硬化促進剤及び無機充
填材を主成分とする半導体封止用樹脂組成物において、
平均粒径が20〜70μm、最大粒径が150μm以下
の球状で、内部に自体積の20〜80vol%の空孔部
を有し、かつ軟化温度が200〜240℃であるポリイ
ミド樹脂をフィラーとして、樹脂組成物総量中に1〜2
0wt%含有してなる半導体封止用樹脂組成物である。
The present invention provides a semiconductor encapsulating resin composition containing an epoxy resin, a phenol novolac resin, a curing accelerator, and an inorganic filler as main components.
As a filler, a polyimide resin having an average particle diameter of 20 to 70 μm, a maximum particle diameter of 150 μm or less, a spherical shape, a void portion of 20 to 80 vol% of its own volume, and a softening temperature of 200 to 240 ° C. is used as a filler. , 1 to 2 in the total amount of the resin composition
It is a resin composition for semiconductor encapsulation containing 0 wt%.

【0006】本発明に用いられるエポキシ樹脂は、通常
の半導体封止用樹脂組成物に用いられるものならばよ
く、例えば、クレゾールノボラック型エポキシ、三官能
エポキシ、ビフェニル型二官能エポキシ、ビスフェノー
ル型エポキシ、臭素化エポキシ等が挙げられるが、特に
限定するものでない。これらのエポキシ樹脂は単独また
は併用して使用してもよい。硬化剤のフェノールノボラ
ック樹脂は、通常の半導体封止用樹脂組成物に用いられ
るものならばよく、例えば、フェノールノボラック型、
クレゾールノボラック型及びこれらの変性樹脂が挙げら
れるが、特に限定するものでない。これらは単独または
併用して用いてもよい。
The epoxy resin used in the present invention may be any one used in ordinary resin compositions for semiconductor encapsulation, and examples thereof include cresol novolac type epoxy, trifunctional epoxy, biphenyl type bifunctional epoxy, bisphenol type epoxy, Examples thereof include brominated epoxy, but are not particularly limited. These epoxy resins may be used alone or in combination. Phenol novolac resin of the curing agent may be used in the usual resin composition for semiconductor encapsulation, for example, phenol novolac type,
Examples thereof include cresol novolac type and modified resins thereof, but are not particularly limited. These may be used alone or in combination.

【0007】硬化促進剤はエポキシ基とフェノール性水
酸基との反応を促進するものであればよく、一般に半導
体封止用樹脂組成物に使用されているものを広く使用す
ることができ、たとえばBDMA等の第3級アミン類、
イミダゾール類、DBU、トリフェニルホスフィン等の
有機リン化合物等が挙げられ、単独または併用して用い
ることもできる。更に、本発明で用いられる無機充填材
としては結晶シリカ、溶融シリカ、アルミナ、炭酸カル
シウム、タルク、マイカ、ガラス繊維等が挙げられる。
The curing accelerator may be any one as long as it accelerates the reaction between the epoxy group and the phenolic hydroxyl group, and those generally used in the resin composition for semiconductor encapsulation can be widely used. For example, BDMA and the like. Tertiary amines of
Examples thereof include imidazoles, DBU, organic phosphorus compounds such as triphenylphosphine, and the like, which may be used alone or in combination. Further, examples of the inorganic filler used in the present invention include crystalline silica, fused silica, alumina, calcium carbonate, talc, mica, glass fiber and the like.

【0008】本発明で用いられるポリイミドフィラーは
熱可塑性、熱硬化性いずれでも良いが、好ましくはエポ
キシ樹脂との接着性の高い、熱硬化性であり平均粒径が
20〜70μで、最大粒径が150μ以下の球状が好ま
しく、これ以外の粒径や不定形の形状をした場合でもリ
フロー処理時のパッケージクラックの防止作用はあるも
のの、成形時の流動性が劣り、未充填やワイヤー流れ、
パッドシフトといった問題がある。ポリイミドフィラー
内部の空孔は、リフロー処理時にパッケージ内部に発生
する高圧の水蒸気ガスを吸収緩和するために必須であ
り、約240℃で高圧の水蒸気ガスがエポキシ樹脂よ
り、軟化状態にあるポリイミド側へ高速で浸入し、ポリ
イミド内部の空孔へ到達することで吸収され、リフロー
時のパッケージクラックを防止するものである。
The polyimide filler used in the present invention may be either thermoplastic or thermosetting, but is preferably thermosetting with high adhesiveness to epoxy resin and has an average particle size of 20 to 70 μm and a maximum particle size. Is preferably 150μ or less spheres, even if it has a particle size or an irregular shape other than this, although it has the effect of preventing package cracks during reflow treatment, the fluidity during molding is poor, unfilled or wire flow,
There is a problem such as pad shift. The voids inside the polyimide filler are essential to absorb and relax the high-pressure steam gas generated inside the package during the reflow process, and the high-pressure steam gas at about 240 ° C. moves from the epoxy resin to the softened polyimide side. It penetrates at a high speed and reaches the pores inside the polyimide, where it is absorbed and prevents package cracks during reflow.

【0009】約240℃の高温の水蒸気ガスがポリイミ
ドフィラー内部の空孔に急激に拡散する際、気体の膨張
による冷却を受け水蒸気ガスの圧力が下がるため、パッ
ケージクラック防止に有効であり、内部の空孔の体積は
20〜80vol%が必要であるが、好ましくは50〜
80vol%である。80vol%以上になるとポリイ
ミドフィラー自体の強度が弱くなり、封止材のコンパウ
ンディングの加工工程や、成形時の成形圧力によってポ
リイミドフィラーが破壊されてしまうため好ましくな
い。又ポリイミドフィラーの軟化温度は200〜240
℃が好ましく、200℃以下では165〜185℃の成
形時に変形、破壊されてしまい、240℃以上ではリフ
ロー時の240℃近辺で軟化せず、水蒸気の吸収作用が
劣るため好ましくない。半導体封止用樹脂組成物への添
加量は、樹脂組成物総量中に1〜20wt%であること
が適当で、1wt%以下では効果がなく、20wt%以
上では、樹脂組成物の線膨張係数が大きくなり好ましく
ない。
When the steam gas at a high temperature of about 240 ° C. rapidly diffuses into the pores inside the polyimide filler, the steam gas is cooled by the expansion of the gas and the pressure of the steam gas is lowered, which is effective for preventing package cracks. The volume of pores is required to be 20 to 80 vol%, but preferably 50 to
It is 80 vol%. If it is 80 vol% or more, the strength of the polyimide filler itself becomes weak, and the polyimide filler is destroyed due to the compounding process of the encapsulant and the molding pressure during molding, which is not preferable. The softening temperature of the polyimide filler is 200 to 240.
C. is preferable, and when it is 200.degree. C. or less, it is deformed and destroyed during molding at 165 to 185.degree. C., and when it is 240.degree. C. or more, it does not soften near 240.degree. The addition amount to the resin composition for semiconductor encapsulation is appropriately 1 to 20 wt% in the total amount of the resin composition, 1 wt% or less has no effect, and 20 wt% or more, the linear expansion coefficient of the resin composition. Undesirably increases.

【0010】[0010]

【実施例】以下本発明を実施例で示す。配合割合は重量
部で示す。 実施例1 ビフェニル型エポキシ樹脂(油化シェル、YX−4000H、エポキシ当量1 90、軟化点107℃) 90重量部 臭素化エポキシ樹脂(日本化薬、BREN、エポキシ当量270、軟化点70 ℃) 10重量部 フェノールノボラック樹脂(住友デュレズ、PRシリーズ、水酸基当量104 、軟化点110℃) 47重量部 溶融シリカ(龍森 RD−8、デンカ FB−74を1:1配合) 400重量部 ポリイミドフィラーA 10重量部 トリフェニルホスフィン 2重量部 γ−グリシドキシプロピルトリメトキシシラン(日本ユニカー A−187) 4重量部 三酸化アンチモン 10重量部 カルナバワックス 3重量部 カーボンブラック 2重量部 を常温で十分に混合し、次に80〜100℃で二軸熱ロ
ールを用いて混練し冷却後粉砕してタブレット化し半導
体封止用樹脂組成物を得た。
EXAMPLES The present invention will be described below with reference to examples. The blending ratio is shown in parts by weight. Example 1 Biphenyl type epoxy resin (oiled shell, YX-4000H, epoxy equivalent 190, softening point 107 ° C) 90 parts by weight Brominated epoxy resin (Nippon Kayaku, BREN, epoxy equivalent 270, softening point 70 ° C) 10 Parts by weight Phenol novolac resin (Sumitomo Dures, PR series, hydroxyl group equivalent 104, softening point 110 ° C) 47 parts by weight Fused silica (Tatsumori RD-8, Denka FB-74 1: 1 blend) 400 parts by weight Polyimide filler A 10 Parts by weight triphenylphosphine 2 parts by weight γ-glycidoxypropyltrimethoxysilane (Nippon Unicar A-187) 4 parts by weight antimony trioxide 10 parts by weight carnauba wax 3 parts by weight Carbon black 2 parts by weight are thoroughly mixed at room temperature. Next, knead using a twin-screw heat roll at 80 to 100 ° C., cool and pulverize Tableted Te to obtain a resin composition for semiconductor encapsulation.

【0011】本発明に用いるポリイミドフィラーは、式
(1)と式(2)を、
The polyimide filler used in the present invention has the formula (1) and the formula (2):

【0012】[0012]

【化1】 [Chemical 1]

【0013】[0013]

【化2】 [Chemical 2]

【0014】モル比1:1で反応器に入れ、発泡剤を式
(1)に対し5wt%加え、反応溶剤としてN−メチル
−2−ピロリドン及びトルエンの混合溶剤を用い、12
0℃で脱水還流を5時間行った。この際反応液の撹拌ス
ピードを150〜500rpmに調整することでポリイ
ミドフィラーの粒径の調整を行った。反応終了後反応物
を濾過して集め、150℃で真空乾燥させた後、200
℃で1時間加熱し、ポリイミドフィラーを得た。ポリイ
ミドフィラーA、B、Cの性状を表1に示す。 実施例2 実施例1と同様にして表1に示す半導体封止用樹脂組成
物を得た。
The mixture was placed in a reactor at a molar ratio of 1: 1 and 5% by weight of a foaming agent was added to the formula (1), and a mixed solvent of N-methyl-2-pyrrolidone and toluene was used as a reaction solvent.
Dehydration reflux was carried out at 0 ° C. for 5 hours. At this time, the particle size of the polyimide filler was adjusted by adjusting the stirring speed of the reaction liquid to 150 to 500 rpm. After completion of the reaction, the reaction product was collected by filtration, dried in vacuum at 150 ° C.
It heated at 1 degreeC for 1 hour, and obtained the polyimide filler. Table 1 shows the properties of the polyimide fillers A, B, and C. Example 2 In the same manner as in Example 1, the resin composition for semiconductor encapsulation shown in Table 1 was obtained.

【0015】比較例1〜3 実施例1と同様にして表1に示す組成の半導体封止用樹
脂組成物を得た。実施例1、2、比較例1〜3の半導体
封止用樹脂組成物をトランスファー成形機を用いて17
5℃で成形し評価用のテストピースを得た。評価結果を
表2に示す。
Comparative Examples 1 to 3 In the same manner as in Example 1, the resin compositions for semiconductor encapsulation having the compositions shown in Table 1 were obtained. The resin compositions for semiconductor encapsulation of Examples 1 and 2 and Comparative Examples 1 to 3 were prepared using a transfer molding machine.
A test piece for evaluation was obtained by molding at 5 ° C. The evaluation results are shown in Table 2.

【0016】評価方法 耐リフロークラック性:模擬素子を封入した52pQF
P(14×14×2.0mm、チップ6×6mm)を用
い、リフロー処理(85℃、85%RHで168H吸湿
処理後、240℃のリフロー処理)後のパッケージクラ
ックの有無で判定。
Evaluation method Reflow crack resistance: 52 pQF with a simulated element enclosed
Using P (14 × 14 × 2.0 mm, chip 6 × 6 mm), it was judged by the presence or absence of package cracks after the reflow treatment (after the moisture absorption treatment of 168H at 85 ° C. and 85% RH for 168H).

【0017】[0017]

【表1】 [Table 1]

【0018】[0018]

【表2】 [Table 2]

【0019】[0019]

【発明の効果】本発明の半導体封止用樹脂組成物はリフ
ロー処理時のパッケージクラック防止に優れており、該
組成物を用いて封止した半導体パッケージを回路板に実
装する場合のリフロー前のパッケージ前の乾燥を省略で
き高信頼性のパッケージを得ることができる。
The resin composition for semiconductor encapsulation of the present invention is excellent in preventing package cracks at the time of reflow treatment, and is suitable for reflow soldering when a semiconductor package sealed with the composition is mounted on a circuit board. Drying before packaging can be omitted, and a highly reliable package can be obtained.

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 FI 技術表示箇所 H01L 23/29 23/31 ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification code Internal reference number FI technical display location H01L 23/29 23/31

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 エポキシ樹脂、フェノールノボラック樹
脂、硬化促進剤及び無機充填材を主成分とする半導体封
止用樹脂組成物において、 平均粒径が20〜70μm、最大粒径が150μm以下
の球状で、内部に自体積の20〜80vol%の空孔部
を有し、かつ軟化温度が200〜240℃であるポリイ
ミド樹脂をフィラーとして、樹脂組成物総量中に1〜2
0wt%含有してなることを特徴とする半導体封止用樹
脂組成物。
1. A resin composition for encapsulating a semiconductor, which comprises an epoxy resin, a phenol novolac resin, a curing accelerator and an inorganic filler as main components and has a spherical shape with an average particle size of 20 to 70 μm and a maximum particle size of 150 μm or less. In the total amount of the resin composition, 1 to 2 is used as a filler having a polyimide resin having a void portion of 20 to 80 vol% of its own volume inside and a softening temperature of 200 to 240 ° C.
A resin composition for semiconductor encapsulation, which contains 0 wt%.
JP34458492A 1992-12-24 1992-12-24 Resin composition for semiconductor encapsulation Expired - Fee Related JP3192255B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP34458492A JP3192255B2 (en) 1992-12-24 1992-12-24 Resin composition for semiconductor encapsulation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP34458492A JP3192255B2 (en) 1992-12-24 1992-12-24 Resin composition for semiconductor encapsulation

Publications (2)

Publication Number Publication Date
JPH06192545A true JPH06192545A (en) 1994-07-12
JP3192255B2 JP3192255B2 (en) 2001-07-23

Family

ID=18370408

Family Applications (1)

Application Number Title Priority Date Filing Date
JP34458492A Expired - Fee Related JP3192255B2 (en) 1992-12-24 1992-12-24 Resin composition for semiconductor encapsulation

Country Status (1)

Country Link
JP (1) JP3192255B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100496588B1 (en) * 1997-04-07 2005-09-09 신에쓰 가가꾸 고교 가부시끼가이샤 Flame-retardant Epoxy Resin Composition
JP2011225647A (en) * 2010-04-15 2011-11-10 Kaneka Corp Method for imparting flame retardancy, imide flame retardant, resin solution, film, and method for producing the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100496588B1 (en) * 1997-04-07 2005-09-09 신에쓰 가가꾸 고교 가부시끼가이샤 Flame-retardant Epoxy Resin Composition
JP2011225647A (en) * 2010-04-15 2011-11-10 Kaneka Corp Method for imparting flame retardancy, imide flame retardant, resin solution, film, and method for producing the same

Also Published As

Publication number Publication date
JP3192255B2 (en) 2001-07-23

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