JPH06187786A - アドレス遷移検出器 - Google Patents
アドレス遷移検出器Info
- Publication number
- JPH06187786A JPH06187786A JP5184586A JP18458693A JPH06187786A JP H06187786 A JPH06187786 A JP H06187786A JP 5184586 A JP5184586 A JP 5184586A JP 18458693 A JP18458693 A JP 18458693A JP H06187786 A JPH06187786 A JP H06187786A
- Authority
- JP
- Japan
- Prior art keywords
- transition
- address
- detection
- level
- signal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/18—Address timing or clocking circuits; Address control signal generation or management, e.g. for row address strobe [RAS] or column address strobe [CAS] signals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Dram (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019920013439A KR940002860A (ko) | 1992-07-27 | 1992-07-27 | 어드레스 변동 검출기 |
| KR1992P13439 | 1992-07-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06187786A true JPH06187786A (ja) | 1994-07-08 |
Family
ID=19337062
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5184586A Pending JPH06187786A (ja) | 1992-07-27 | 1993-07-27 | アドレス遷移検出器 |
Country Status (4)
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100472728B1 (ko) * | 1997-05-08 | 2005-06-27 | 주식회사 하이닉스반도체 | 반도체장치의어드레스천이검출회로 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4985865A (en) * | 1988-12-21 | 1991-01-15 | Texas Instruments Incorporated | Asymmetrical delay for controlling word line selection |
| KR930010990A (ko) * | 1991-11-19 | 1993-06-23 | 김광호 | 반도체 메모리 장치에서의 스피드 향상을 위한 회로 |
-
1992
- 1992-07-27 KR KR1019920013439A patent/KR940002860A/ko not_active Abandoned
-
1993
- 1993-06-23 TW TW082105028A patent/TW224552B/zh active
- 1993-07-08 EP EP93305381A patent/EP0581465A3/en not_active Withdrawn
- 1993-07-27 JP JP5184586A patent/JPH06187786A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| TW224552B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1994-06-01 |
| EP0581465A3 (en) | 1995-04-12 |
| EP0581465A2 (en) | 1994-02-02 |
| KR940002860A (ko) | 1994-02-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6111796A (en) | Programmable delay control for sense amplifiers in a memory | |
| US5910914A (en) | Sensing circuit for a floating gate memory device having multiple levels of storage in a cell | |
| US5467037A (en) | Reset generation circuit to reset self resetting CMOS circuits | |
| US5841719A (en) | Data latching circuit for read-out operations of data from memory device | |
| KR950001430B1 (ko) | 전류 감지 증폭 회로 | |
| US5313435A (en) | Semiconductor memory device having address transition detector | |
| KR980011453A (ko) | 출력버퍼회로 | |
| US5805517A (en) | Self-calibrating address transition detection scheme | |
| US6486713B2 (en) | Differential input buffer with auxiliary bias pulser circuit | |
| JPH10334668A (ja) | 半導体メモリ素子の感知増幅器インエーブル信号発生回路 | |
| US5978286A (en) | Timing control of amplifiers in a memory | |
| JPH06187786A (ja) | アドレス遷移検出器 | |
| US20040013161A1 (en) | Temperature detecting circuit | |
| JP3109986B2 (ja) | 信号遷移検出回路 | |
| JP3313383B2 (ja) | 読み出し専用記憶装置 | |
| JPH06338189A (ja) | カラムアドレス遷移検出回路 | |
| JP2001177384A (ja) | パルス発生器 | |
| US5652535A (en) | Non-overlaping signal generation circuit | |
| KR100505454B1 (ko) | 반도체 장치의 데이터 출력 회로 및 방법 | |
| KR0155620B1 (ko) | 반도체 메모리 소자의 펄스 폭 제어 회로 | |
| KR0132369B1 (ko) | 반도체집적 장치의 데이타 입력버퍼 및 그 입력 버퍼링 방법 | |
| US6107837A (en) | Address decoding circuit | |
| KR100479819B1 (ko) | 신호천이검출장치 | |
| KR0170519B1 (ko) | 반도체 메모리 장치의 전류 감지 증폭기 회로 | |
| KR960003532B1 (ko) | 반도체 메모리 장치의 어드레스 변환 감지 회로 |