JPH06177729A - Ｍｏｓパワートランジスタ用ゲート駆動回路 - Google Patents

Ｍｏｓパワートランジスタ用ゲート駆動回路

Info

Publication number
JPH06177729A
JPH06177729A JP5191206A JP19120693A JPH06177729A JP H06177729 A JPH06177729 A JP H06177729A JP 5191206 A JP5191206 A JP 5191206A JP 19120693 A JP19120693 A JP 19120693A JP H06177729 A JPH06177729 A JP H06177729A
Authority
JP
Japan
Prior art keywords
power transistor
mos power
gate
drive circuit
capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5191206A
Other languages
English (en)
Japanese (ja)
Inventor
Thomas L Hopkins
エル． ホプキンス トーマス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics lnc USA
Original Assignee
SGS Thomson Microelectronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=25448414&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JPH06177729(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by SGS Thomson Microelectronics Inc filed Critical SGS Thomson Microelectronics Inc
Publication of JPH06177729A publication Critical patent/JPH06177729A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches

Landscapes

  • Electronic Switches (AREA)
  • Power Conversion In General (AREA)
JP5191206A 1992-07-31 1993-08-02 Ｍｏｓパワートランジスタ用ゲート駆動回路 Pending JPH06177729A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/923,266 US5359244A (en) 1992-07-31 1992-07-31 Gate drive circuit for a MOS power transistor
US923266 1992-07-31

Publications (1)

Publication Number Publication Date
JPH06177729A true JPH06177729A (ja) 1994-06-24

Family

ID=25448414

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5191206A Pending JPH06177729A (ja) 1992-07-31 1993-08-02 Ｍｏｓパワートランジスタ用ゲート駆動回路

Country Status (4)

Country Link
US (1) US5359244A (fr)
EP (1) EP0581580B1 (fr)
JP (1) JPH06177729A (fr)
DE (1) DE69321171T2 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007214647A (ja) * 2006-02-07 2007-08-23 Denso Corp ハイサイド駆動回路

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2103133C (fr) * 1993-11-15 1999-03-02 Thomas P. Murray Interrupteur pour commander le courant d'appel
US5672992A (en) * 1995-04-11 1997-09-30 International Rectifier Corporation Charge pump circuit for high side switch
JP3509318B2 (ja) * 1995-08-09 2004-03-22 日産自動車株式会社 電力用バイポーラトランジスタの制御装置
DE19609121C1 (de) * 1996-03-08 1997-02-27 Siemens Ag Schaltungsanordnung zum Ansteuern eines Feldeffekttransistors mit sourceseitiger Last
US6570777B1 (en) 2001-12-06 2003-05-27 Eni Technology, Inc. Half sine wave resonant drive circuit
US6531895B1 (en) * 2002-02-08 2003-03-11 Delphi Technologies, Inc. Isolated gate drive circuit having a switched input capacitor
US6946885B1 (en) * 2003-05-19 2005-09-20 The United States Of America As Represented By The United States Department Of Energy Ripple gate drive circuit for fast operation of series connected IGBTs
US6856177B1 (en) * 2003-07-22 2005-02-15 International Rectifier Corporation High side power switch with charge pump and bootstrap capacitor
US6975146B1 (en) * 2004-01-02 2005-12-13 Sauer-Danfoss Inc. High side NFET gate driving circuit
US8270189B2 (en) * 2007-05-31 2012-09-18 International Rectifier Corporation Charge circuit for optimizing gate voltage for improved efficiency
US7733135B2 (en) * 2007-10-31 2010-06-08 Texas Instruments Incorporated High side boosted gate drive circuit
US9000836B2 (en) 2008-01-10 2015-04-07 Micron Technology, Inc. Voltage generator circuit
US8456794B2 (en) * 2009-11-12 2013-06-04 Infineon Technologies Ag Clock-pulsed safety switch
DE102011076732A1 (de) * 2011-05-30 2012-12-06 Webasto Ag Spannungsversorgungsschaltung und Verpolschutzschaltung
CN103021359B (zh) * 2012-12-10 2015-11-25 京东方科技集团股份有限公司 一种阵列基板及其驱动控制方法和显示装置
US9065437B2 (en) 2013-04-29 2015-06-23 Mediatek Singapore Pte. Ltd. Circuit for driving high-side transistor utilizing voltage boost circuits
WO2015029456A1 (fr) * 2013-09-02 2015-03-05 富士電機株式会社 Dispositif à semi-conducteurs
CN113078888B (zh) * 2020-01-06 2024-04-19 达尔科技股份有限公司 栅极驱动设备和控制方法
US11101796B2 (en) 2020-01-06 2021-08-24 Diodes Incorporated Gate drive apparatus and control method
WO2024063427A1 (fr) * 2022-09-19 2024-03-28 삼성디스플레이주식회사 Circuit d'attaque de grille

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4540893A (en) * 1983-05-31 1985-09-10 General Electric Company Controlled switching of non-regenerative power semiconductors
KR920010749B1 (ko) * 1989-06-10 1992-12-14 삼성전자 주식회사 반도체 집적소자의 내부전압 변환회로
US4926354A (en) * 1989-09-26 1990-05-15 Allied-Signal Inc. Power controller with low standby current drain
US4992683A (en) * 1989-09-28 1991-02-12 Motorola, Inc. Load driver with reduced dissipation under reverse-battery conditions
US5023474A (en) * 1989-11-08 1991-06-11 National Semiconductor Corp. Adaptive gate charge circuit for power FETs
FR2654880B1 (fr) * 1989-11-22 1994-09-09 Siemens Automotive Sa Circuit integre de puissance "intelligent" du type mos, pour la commande de l'alimentation d'une charge electrique.
US4967109A (en) * 1989-12-08 1990-10-30 General Electric Company High efficiency gate driver circuit for a high frequency converter

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007214647A (ja) * 2006-02-07 2007-08-23 Denso Corp ハイサイド駆動回路
JP4618149B2 (ja) * 2006-02-07 2011-01-26 株式会社デンソー ハイサイド駆動回路

Also Published As

Publication number Publication date
EP0581580A3 (fr) 1994-12-28
EP0581580A2 (fr) 1994-02-02
DE69321171T2 (de) 1999-04-08
US5359244A (en) 1994-10-25
EP0581580B1 (fr) 1998-09-23
DE69321171D1 (de) 1998-10-29

Similar Documents

Publication Publication Date Title
JPH06177729A (ja) Ｍｏｓパワートランジスタ用ゲート駆動回路
US5198699A (en) Capacitor-driven signal transmission circuit
EP0812488B1 (fr) Circuit de commande integre pour circuit en demi-pont
US5023472A (en) Capacitor-driven signal transmission circuit
JP3337344B2 (ja) Ｃｍｏｓ回路
US6208197B1 (en) Internal charge pump voltage limit control
KR980011440A (ko) 반도체 기판용 전하 펌프
US6255853B1 (en) Integrated circuit having dynamic logic with reduced standby leakage current
JPH08103099A (ja) 電子的スイッチのスイッチング用のレベルシフタを有する制御回路
JP2001144603A (ja) レベルシフタ回路およびそれを含むデータ出力回路
JP4224656B2 (ja) ブートストラップ型ｍｏｓドライバー
US20070075765A1 (en) Booster circuit
US5412257A (en) High efficiency N-channel charge pump having a primary pump and a non-cascaded secondary pump
US4638182A (en) High-level CMOS driver circuit
US4347448A (en) Buffer circuit for semiconductor memory
WO1999014857A1 (fr) Circuit d'attaque generateur de tension relevee
EP3326291A1 (fr) Technique et méthode de circuit pour la gestion de l'alimentation et des performances en internet des objets (ido)
JPH09294367A (ja) 電圧供給回路
US5798915A (en) Progressive start-up charge pump and method therefor
JPH0430207B2 (fr)
EP0678969B1 (fr) Circuit intégré semi-conducteur BIMOS avec tension d'alimentation surélevée
US4503344A (en) Power up reset pulse generator
US6275019B1 (en) Absolute control of non overlap time in switch mode power controller output stages
JPH02137254A (ja) 基板電位検知回路
JPH0116058B2 (fr)