JPH06177214A - Crimp terminal and connecting method therefor and mounting method for semiconductor device - Google Patents

Abstract

PURPOSE:To improve reliability on electrical connection regarding a crimp terminal maintaining electrical connection abutted against an opposite terminal with adhesives, a crimping method an the mounting method of a semiconductor device utilizing said crimp terminal. CONSTITUTION:Grooves 17a, 17b are formed on the top face of crimp terminals 6d, 6e abutted against opposite terminals, and conventional abutting surfaces are divided into a plurality of abutting surfaces 6b. Projecting sections formed by such grooves 17a, 17b are plastically deformed easily when the projecting section are abutted against the opposite terminals, and adhesives held by connecting sections are made to flow out easily. Consequently, when the contact- bonding terminals 6d, 6e are connected to the opposite terminals, the areas of connection are ensured readily, are reliability is improved. Adhesive-filling grooves are shaped on the top faces of the crimp terminals, no adhesive adheres on the abutting surfaces with the opposite terminals, and the crimp terminals are pushed at two stages and the increase of the diameters of adhesives is controlled, thus enhancing the reliability of a connecting section.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a crimp terminal used in a liquid crystal display device and a crimping method therefor, and more particularly to a conventional crimp connection using an anisotropic conductive resin mixed with conductive particles when mounting a semiconductor device. An alternative crimp terminal and a crimping method using the terminal.

In recent years, the number of crimp terminals of a semiconductor device has increased and the size thereof has decreased with the high integration and high density of LSI. Therefore, it is not only required that each crimping terminal surely contacts the corresponding mating terminal and that all crimping terminals are securely connected to the mating terminal. It is required to be uniform.

As described above, recently, high reliability is required for the connection between the crimp terminal and the mating terminal.

[0004]

2. Description of the Related Art FIG. 29 is a plan view showing a configuration example of a display unit of a liquid crystal display device, FIG. 30 is a plan view showing a schematic configuration of an example of an insulating film on which a semiconductor device is mounted, and FIG. 31 is an anisotropic conductive resin. FIG. 32 is an explanatory view of a conventional terminal connection method using a film, FIG. 32 is an explanatory view of a semiconductor device mounting method by COG connection, and FIG. 33 is a conventional method for preventing an adhesive from entering between a bump of a semiconductor device and a connection partner terminal thereof. It is explanatory drawing of an example.

In FIG. 29, a liquid crystal display panel 1 in which liquid crystal is filled in a gap between a pair of glass substrates on which a large number of transparent electrodes are formed and three printed wiring boards 2a are IC chips for driving the display panel 1. A printed wiring board 2b which is connected by an insulating film 3 having (integrated circuit device) mounted thereon, and is not connected to the display panel 1 between the three printed wiring boards 2a.
And the printed wiring board 2a between the jumper cable 4
Connect with.

In such a display unit, the electrode terminals formed on the liquid crystal display panel 1 at a high density of, for example, 50 μm pitch and the wiring terminals formed on the insulating film 3 at the same pitch as the electrode terminals are generally connected by thermocompression bonding. .

In FIG. 30, a heat-resistant insulating film (generally a polyimide film) 3 on which two integrated circuit devices 5 accommodating IC chips are mounted has an integrated circuit device 5 and electrode terminals formed on the liquid crystal display panel 1. A plurality of conductor patterns 6 for connecting the integrated circuit device 5 and the printed wiring board 2a
A plurality of conductor patterns 7 that connect to the conductor pattern formed in 1. are formed.

Since the conductor patterns 6 and 7 are formed by etching a copper foil (not shown) attached to the insulating film 4 with an adhesive 8 (see FIG. 31), the cross-sectional shape thereof is trapezoidal by side etching. is there.

In FIG. 31, an electrode terminal (counter terminal) 11 formed on the glass substrate 1a of the liquid crystal display panel 1 and a crimping terminal 6a at the tip of the conductor pattern 6 generally have a length of about 3 mm and are thermosetting. Alternatively, a part of the conductive particles 10 mixed with the photo-curable adhesive 9 is electrically connected via the conductive particles 10 'sandwiched between the crimp terminal 6a and the electrode terminal 11, The connection is maintained by the adhesive force and shrinkage stress of the adhesive 9 filled and cured between the glass substrate 1a and the insulating film 3.

An adhesive film containing conductive particles 10 is generally an anisotropic conductive film (ACF; Anisotropic).
Known as Conductive Film). For example, the pitch
The cross-sectional shape of the crimp terminal 6a, which is 50 μm and in which side etching has occurred, has a width of the bottom surface of the insulating film 3 of about 25.
The width of the upper surface connected to the electrode terminal 11 is 5 μm
It will be around 10 μm.

In the electrical connection between the electrode terminal 11 and the crimp terminal 6a, when the contact points between the upper surface of the crimp terminal 6a and the electrode terminal 11 are set to, for example, about 20 points, about 20 conductive particles are used. It is necessary to intervene 10. At that time, the particle size of the conductive particles 10 is about 5 μm or more, and only one crimp terminal 6a having a pitch of 50 μm can exist in the width direction.

In FIG. 32, a plurality of pads (crimp terminals) 13 of about 50 μm × 50 μm are formed on the lower surface (face) of the semiconductor chip 12, and conductor terminals 15 for connecting the pads 13 are formed on the glass substrate 14. Then, the electrical connection in which the pad 13 is brought into contact with the conductor terminal 15 is maintained by the adhesive force and shrinkage stress of the adhesive 16 filled and cured between the semiconductor chip 12 and the substrate 14. Generally, a thermosetting or light (ultraviolet) curable adhesive is used as the adhesive 16.

The conventional method shown in FIG. 33 is disclosed in Japanese Unexamined Patent Publication No. 62-132331. First, a small amount of the first resin (adhesive) is applied onto the wiring board 41 on which the wiring 42 is formed as shown in (a). Agent) 71
Apply.

The amount of the resin 71 is determined by aligning the electrodes (pads) 13 of the semiconductor chip 12 with the wirings 42 of the wiring board 41, and the amount of resin shown in FIG.
As shown in (b), pressurizing tool 72
When the is pressed against the wiring board 41, the electrode 13 and the wiring 42 are not reached.

Therefore, when the pressure of the pressure tool 72 is released after the resin 71 is cured, the electrical connection between the electrode 13 and the wiring 42 is maintained by the resin 71. Furthermore, FIG.
As shown in (c), the gap between the semiconductor chip 12 and the wiring board 41 is filled with the second resin (adhesive) 73, and the electrode 13 and the wiring 42
The electrical connection with and becomes stronger.

[0016]

As described above,
The conductor pattern 6 formed of metal foil has a trapezoidal cross section,
Only one conductive particle 10 can exist in the width direction of the crimp terminal 6a between the electrode terminal 11 and the crimp terminal 6a having a pitch of about 50 μm, and when the terminals are brought into contact with each other, the electrode terminal 11 and the crimp terminal 6a The adhesive 9 between the opposite side of 6a flows toward the outside of the crimp terminal 6a.

Therefore, before connection, the electrode terminal 11 and the crimp terminal 6 are connected.
A part of the conductive particles 10 that were between the a and
Before being cured, it can be pushed out of the facing area or barely caught as shown in the central portion of FIG.

Generally, it is necessary to sandwich 20 or more conductive particles 10 between each connection between the electrode terminal 11 and the crimp terminal 6a. ,
The connection resistance between the liquid crystal display panel 1 and the integrated circuit device 3 increases, and the reliability is impaired.

In order to solve such a drawback by the conventional technique, it is necessary to increase the overlapping length of the electrode terminal 11 and the crimp terminal 6a. Therefore, the liquid crystal display panel 1 needs to be large-sized and the crimping force at the time of connection must be increased, and the liquid crystal display panel 1 is likely to be damaged.

On the other hand, as shown in FIG. 32, the electrical connection method which does not use the conductive particles 10 is also a semiconductor device (semiconductor chip).
Used in 12 implementations. However, in these connection methods, the contact surface, that is, the lower surfaces of the many pads 13 formed on the semiconductor chip 12 need to be aligned on the same plane with an error of about 2 μm or less, and an adhesive film is formed between the connection surfaces. There is a problem in that the reliability of the electrical connection is likely to remain and the reliability of the electrical connection is likely to be impaired, and if the pressing force at the time of connection is increased to secure the reliability, mounting distortion increases and conversely the reliability decreases.

Further, strictly speaking, each pad 13 and the mating terminal 15 formed on the substrate 14 are brought into contact with each other only at a few points in the strict sense, and the current flowing through the connection is slightly increased. If a voltage difference of about 100 mV occurs, display unevenness will occur.

Further, the pad 13 can be highly accurately set to 2 μm or less.
Even if the semiconductor chip 12 is relatively small and the size of the pad 13 is about 50 μm × 50 μm, the liquid crystal display panel 1 and the insulating film 3 can be aligned.
It cannot be applied to the connection with, as it is extremely difficult technically and economically.

As one method for densifying the crimp terminals 6a without using conductive particles, a structure in which needle-shaped or lump-shaped metal projections are formed on the surface of the crimp terminals by the electrodeposition method is known.
According to the publication, the pitch of the crimp terminals can be set to about 70 μm.

However, since the metal protrusions are formed by the electrodeposition method, they are relatively easily peeled off, an electric short circuit is apt to occur due to the peeled metal protrusions, and it is difficult to reduce the pitch of the crimp terminals 6a to about 50 μm.

As a conventional structure for reducing the resistance of electrical connection and improving the reliability, in Japanese Patent Laid-Open No. 62-133331, a semiconductor element is fixed to a substrate with a first resin, and then a second resin is electrically connected. A method of filling the static connection has been proposed.

However, since the first resin 19 is fixed to the central portion of the semiconductor chip 12, uneven stress acts on the semiconductor chip 12, and as a result, the contact resistance tends to change over time. There is.

Further, generally, about 200 bumps are formed on the semiconductor chip 12, but it is not easy to inspect whether such bumps are connected to a predetermined mating terminal. There was also.

[0028]

DISCLOSURE OF THE INVENTION An object of the present invention is to provide a crimp terminal having high reliability of electrical connection without using conductive particles, a connecting method using the terminal, and a semiconductor using the terminal. It is to provide a mounting method of a device.

FIG. 1 showing a typical example of a crimp terminal according to the present invention.
According to the method, a plurality of grooves 17a, 17b are formed on the upper surface of the crimp terminal 6d, 6e facing the terminal of the connection partner, and the crimp terminal is formed by the grooves formed by etching or embossing.
The upper surfaces of 6d and 6e are divided into a plurality of contact surfaces 6b.

An example of connecting the crimp terminals 6d, 6e and the mating terminal is
As shown in FIG. 7, the crimp terminal 6e pushes the adhesives 24 and 25 away to bring them into contact with the mating terminal 11, and after electrically connecting them, the adhesives 24 and 25 are cured.

In order to prevent the adhesive from adhering to the contact surface of the crimp terminal, for example, as shown in the embodiment of FIG. 21, the crimp terminal 6j
The resin inflow groove 17d is provided on the upper surface of the and the adhesive that has flowed into the groove 17d is used, or as shown in FIG.
A through hole 63 is provided in the insulating film 3 having 6n formed, and an adhesive is injected from the back surface to the front surface of the insulating film 3.

The crimp terminal according to the present invention is effective when applied to a bump of a semiconductor device. At that time, it is more effective not to sandwich an adhesive between the bump and the mating terminal. Therefore, in the present invention, for example, as shown in the embodiment of FIG. 12, the adhesive when the crimp terminal 31 is brought into contact with the mating terminal 42.
Quantify the adhesive 44 so that 44 does not reach the crimp terminal 31,
It is proposed that the adhesive 44 covers the crimp terminal 31 as the pressing proceeds.

Further, in the present invention, as a means for facilitating the inspection of the connection state between the crimp terminal and the mating terminal, for example, in FIG.
As shown in 15, an auxiliary bump 47 that does not come into contact with the mating terminal is provided, and the gap between the mating terminal 15 and the bump 47 is measured by using a laser microscope or the like.

[0034]

With the crimp terminal whose upper surface is divided into a plurality of contact surfaces by the groove, for example, the adhesive is pushed away to bring the crimp terminal into contact with the mating terminal, and then the adhesive is cured to interpose conductive particles. Without crimping, it is possible to connect to the mating terminal at a larger number of contact points than in the conventional method, and the adhesive filled in the groove increases the maintenance force for the contact connection and stabilizes it. Is applied to a bump of a semiconductor device, and the same effect can be obtained.

Further, the means for filling the resin inflow groove provided in the crimp terminal with the adhesive, the means for injecting the adhesive from the through hole provided in the insulating film, and the quantification of the adhesive and the crimp terminal are used. According to the above-mentioned means which uses the stepwise pressing together, the adhesive does not enter between the crimp terminal and the mating terminal thereof, so that the connection between the crimp terminal and the mating terminal is further stabilized.

Further, according to the above-mentioned means for providing the auxiliary bump, the connection state between the crimp terminal and the mating terminal, which has been difficult due to the electric means, can be observed with a microscope, and especially before the adhesive is completely cured. By observing with a microscope, the defective crimp terminal (semiconductor device) can be easily replaced.

[0037]

1 is a perspective view showing an embodiment of a crimp terminal according to the present invention (No. 1), FIG. 2 is a perspective view showing an embodiment of a crimp terminal according to the present invention (No. 2), and FIG. 3 is according to the present invention. FIG. 5 is an explanatory view of a first manufacturing example of the crimp terminal according to the present invention, FIG. 5 is an explanatory view of a second manufacturing example of the crimp terminal according to the present invention, 6 is an explanatory view of a third manufacturing example of the crimp terminal according to the present invention, FIG. 7 is an explanatory view of a crimp terminal connecting method according to the embodiment of the present invention, and FIG. 8 is a perspective view showing an embodiment of the crimp terminal according to the present invention. FIG. 9 is a cross-sectional view showing (No. 4) and its connection state, and FIG.
Explanatory drawing of G connection, FIG. 10 shows CO according to another embodiment of the present invention.
It is explanatory drawing of the crimp terminal for G connection.

In FIG. 1A, a conductor pattern 6 is formed on the insulating film 3 by etching, and the upper surface of the crimp terminal 6d at the tip of the conductor pattern 6 adhered to the insulating film 3 with an adhesive 8 is formed. For example, a plurality of grooves 17a (two in the figure) are formed in the length direction of the conductor pattern 6 on the upper surface of the crimp terminal 6d having a length of about 3 mm, and a plurality of grooves 17a in the width direction of the conductor pattern 6 (the figure is shown). Multiple grooves 17b are formed.

The grooves 17a and 17b have a width of 2 μm and a depth of 1 to 2 μ, for example.
The contact surface 6b is formed by the grooves 17a and 17b so that the adhesive is pushed away and brought into contact with the mating terminal.
The dimension is, for example, a square of about 2 μm × 2 μm.

In FIG. 1B, a conductive pattern 6 is formed on the insulating film 3 by etching, and the upper surface of the crimp terminal 6e at the tip of the conductive pattern 6 adhered to the insulating film 3 with an adhesive 8, For example, a plurality of grooves 17a (two in the figure) are formed in the length direction of the conductor pattern 6 on the upper surface of the crimp terminal 6d having a length of about 3 mm, and a plurality of grooves 17a in the width direction of the conductor pattern 6 (the figure is shown). Multiple grooves 17b are formed.

The grooves 17a and 17b are, for example, 2 μm wide and 1-2 μm deep.
The contact surface 6b is formed by the grooves 17a and 17b so that the adhesive is pushed away and brought into contact with the mating terminal.
The size of the rectangle is, for example, a rectangle of about 2 μm × 5 μm.

In FIG. 2 (a), the insulating film 3 has
On the upper surface of the crimp terminal 6f, which is one end of the conductive pattern 6 adhered to the insulating film 3 by the adhesive 8 by forming the conductor pattern 6 by photoetching, for example, on the upper surface of the crimp terminal 6f having a length of about 3 mm. A plurality of (two in the figure) grooves 17a are formed in the length direction of the conductor pattern 6.

The groove 17a has, for example, a width of 2 μm and a depth of 1 to 2 μm, and the groove is formed so that the adhesive is pushed away to abut the mating terminal.
A plurality of strip-shaped rectangular contact surfaces 6b formed by 17a
Has a width of, for example, about 2 μm.

In FIG. 2B, the insulating film 3 has
On the upper surface of the crimp terminal 6g, which is one end of the conductive pattern 6 adhered to the insulating film 3 with the adhesive 8 by forming the conductor pattern 6 by photoetching, for example, on the upper surface of the crimp terminal 6g having a length of about 3 mm. A large number (a large number in the figure) of grooves 17b are formed in the width direction of the conductor pattern 6.

The groove 17b has a width of 2 μm and a depth of 1 to 2 μm, for example, so that the adhesive may be pushed away to abut the mating terminal.
The width of the plurality of strip contact surfaces 6b formed by 17b is, for example, about 2 μm.

In FIG. 3A, the insulating film 3 has
On the upper surface of the crimp terminal 6h, which is one end of the conductor pattern 6 adhered to the insulating film 3 by the adhesive 8 by forming the conductor pattern 6 by photoetching, for example, on the upper surface of the crimp terminal 6h having a length of about 3 mm. A plurality of (a large number in the figure) grooves 17b are formed in the lengthwise direction of the conductor pattern 6.

The groove 17b has a width of 2 μm and a depth of 1 to 2 μm, for example, so that the adhesive may be pushed away to contact the mating terminal.
A plurality of contact surfaces 6b formed in a substantially square shape by 17b
Is, for example, about 3 μm on a side.

In FIG. 3B, the insulating film 3 has
A conductor pattern 6 is formed by photo-etching, and is attached to the upper surface of the crimp terminal 6i which is one end of the conductor pattern 6 adhered to the insulating film 3 with the adhesive 8, for example, the upper surface of the crimp terminal 6i having a length of about 3 mm. , A large number of grooves 17 (a large number are shown in the figure) which are inclined in the longitudinal direction of the conductor pattern 6 by, for example, 45 degrees
form c.

The groove 17c has, for example, a width of 2 μm and a depth of 1 to 2 μm.
The plurality of strip-shaped contact surfaces 6b formed by 17c have a width of, for example, about 2 μm.

In FIG. 4 (a), after forming the conductor pattern 6 adhered to the insulating film 3 with the adhesive 8, the groove (17a or 17a and 17b or 17b) of the crimp terminal portion of the conductor pattern 6 is formed. A resist pattern 19 having corresponding through holes 18 is formed.

Then, as shown in FIG. 4B, the groove 17a (or 17a) is formed by etching using the resist pattern 19.
And 17b or 17b or 17c). The depth of the groove 17a is set to an appropriate value by controlling the etching time, for example, 2 μm.
And

After that, when the resist pattern 19 is removed, as shown in FIG. 4C, the crimp terminal 6f (or 6d or
6e or 6g or 6h or 6i) is completed. In FIG. 5 (a), after forming the conductor pattern 6 adhered to the insulating film 3 with the adhesive 8, the conductor pattern 6 is selectively etched with respect to the metal layer, for example, the conductor pattern 6 made of copper. A nickel layer 20 capable of selective etching is formed on the conductor pattern 6, and a groove (17a or 17a and 17b or 17) of the crimp terminal formation portion of the conductor pattern 6 is formed.
A resist pattern 19 having a through hole 18 corresponding to b or 17c) is formed.

Next, as shown in FIG. 5B, the nickel layer 20 is etched by using the resist pattern 19 to form grooves 17a (or 17a and 17b or 17b or 17c) having a uniform depth. .

After that, when the resist pattern 19 is removed, as shown in FIG. 5C, the crimp terminal 6f (or 6d or
6e or 6g or 6h or 6i) Crimp terminal 6f ′ with the same shape as
(Or terminals with the same shape as terminals 6d, 6e, 6g, 6h, 6i) are completed.

In FIG. 6 (a), after forming the conductor pattern 6 adhered to the insulating film 3 with the adhesive 8, the insulating film 3 is fixed to the base 21 as shown in FIG. Groove (17a or 17a and 17b) of the crimp terminal formation part of pattern 6
Alternatively, the conductor pattern 6 is pressed by the pressing die 22 having the convex portion 23 corresponding to 17b or 17c).

Then, when the pressing die 22 is removed, FIG.
As shown in (c), the groove 17a (or 17a and
17b or 17b) formed crimp terminal 6f (or 6d or
6e or 6g or 6h or 6i) is completed.

In FIG. 7A, the mating terminal 11 and the glass substrate 1a on which the mating terminal 11 is formed so that the adhesive sheet 24 is sandwiched between the crimping terminals 6f (or 6d or 6e or 6g or 6h or 6i). The adhesive sheet 24 made of a thermosetting resin, a thermoplastic resin, a photocurable resin, or a mixed resin of a thermosetting resin and a thermoplastic resin is placed on the insulating film 3.

FIG. 7B shows an embodiment in which a fluid resin is used instead of the adhesive sheet 24, and a thermosetting resin, a thermoplastic resin, or a photocuring resin is applied to the glass substrate 1a on which the mating terminals 11 are formed. Adhesive 25, which is made of a thermosetting resin or a mixed resin of a thermosetting resin and a thermoplastic resin, is applied, and the mating terminal 11 and the crimp terminal 6f (or 6d or 6e or 6g or 6h) are applied.
Alternatively, the insulating film 3 is overlaid on the adhesive 25 so that it faces 6i).

Then, as shown in FIG. 7 (c), a pressure heating head 26 is used to press the insulating film 3 against the glass substrate 1a with an appropriate pressing force, for example, a pressing force of about 30 kg / cm ² , and the mating terminal. After the 11 and the contact surface 6b of the crimp terminal 6e are brought into contact with each other, the thermosetting or thermoplastic adhesive sheet 24 or the adhesive 25 is heated to its curing temperature and then cooled to be photocured. The agent sheet 24 or the adhesive 25 is irradiated with light having an energy intensity necessary for curing.

Then, the adhesive sheet 24 or the adhesive 25
The adhesive 9 formed by curing is bonded to the glass substrate 1a and the insulating film 3 in a state where the crimp terminal 6f (or 6d or 6e or 6g or 6h or 6i) and its mating terminal 11 are in contact with each other, The electrical connection by the contact is maintained by the adhesive force of the adhesive 9 and the contraction stress.

In FIG. 8A, after forming the conductor pattern terminal 11 'on the glass substrate 1a, the crimp terminal 6d (or 6e, 6f, 6g, 6h, 6i) is formed on the terminal 11'. Become. The crimping terminal 6d is such that a conductor layer made of, for example, gold or aluminum is formed on the terminal 11 'to a thickness of several μm, and the conductor layer is etched to form grooves 17a and 17b (or only 17a or
Form 17b only or 17c).

In FIG. 8B, a conductor terminal (counter terminal) 6'which is adhered with an adhesive 8 is formed on the insulating film 3, and the crimp terminal 6d and the conductor terminal 6'formed on the terminal 11 'are formed. After making them contact with each other formed at the same pitch, the corresponding contact (electrical connection) is made by using the adhesive force and shrinkage stress of the adhesive 9 by the same method as described above with reference to FIG. You will be able to maintain it.

In FIG. 9, (A) is a side view of the COG connection according to the embodiment of the present invention, (B) is an enlarged bottom view of the COG connection crimp terminal shown in (A), and (C) is (A). It is the side view which expanded the crimp terminal for COG connection shown in FIG.

In FIG. 9A, a plurality of Cs of about 50 μm × 50 μm are provided on the lower surface of the semiconductor device (semiconductor chip) 12.
The OG (Chip on Glass) connection crimp terminal 31 is formed, the conductor terminal 15 for connecting the crimp terminal 31 is formed on the glass substrate 14, and the crimp terminal 31 is brought into contact with the conductor terminal 15 for electrical connection. Adhesive 16 of thermosetting resin filled between semiconductor chip 12 and substrate 14 and cured, or thermoplastic resin, or mixed resin of thermosetting resin and thermoplastic resin, or light (ultraviolet) curable resin 16 It can be maintained by the contraction stress of.

In FIGS. 9B and 9C, for example, the thickness is 10 μm.
The crimp terminal 31 having a size of about m to 20 μm and made of gold or the like has a plurality of vertical grooves 32 (four in the figure) and a plurality of vertical grooves (four in the figure) on the lower surface of the conventional pad 13 (see FIG. 14) formed by plating. The figure shows 4
The horizontal groove 33 is formed by etching or machining, and a plurality of contact surfaces 31a (25 in the figure) are formed on the lower surface of the crimp terminal 31.

The grooves 32 and 33 are, for example, about 2 μm wide and 1 μ deep.
The contact surface 31a has a side of 2 μm to 10 μm.
Make a square or rectangle of about μm. Therefore, a crimp terminal 31 having a plurality of contact surfaces 31a, for example, 25 contact surfaces
Since the crimp terminal 31 including 31a comes into contact with the conductor terminal 15 at 10 to 25 points, the reliability of the electrical connection to the conductor terminal 15 is ensured.

In FIG. 10, (a) is an enlarged bottom view in which a plurality of vertical grooves 34 and horizontal grooves 35 are provided on the pad 36 to form the protrusion 36a, and (b) is a side surface of the pad 36 shown in (a). As shown in FIG. 3C, the lower surface of the pad 36 is covered with, for example, a nickel plating layer 37, and the protrusion 36a is covered with the plating layer 37 to complete the crimp terminal 38.

In the crimp terminal 38, each contact surface 38a has a convex curved surface. Therefore, when the contact surface 38a is brought into contact with the mating terminal, the tip end of the contact surface 38a is apt to be plastically deformed,
Compared to the flat contact surface 31a formed as shown in FIG. 8, it has an advantage that the contact area with the mating terminal is larger.

FIG. 11 is a perspective explanatory view (a) of a crimp terminal according to still another embodiment of the present invention and an explanatory view (b) of COG connection. In FIG. 11 (a), the crimp terminal 6h formed on the conductor pattern 6 has a plurality of grooves 17b for dividing the upper surface in the width direction of the crimp terminal 6h, and has a substantially square contact surface 6.
b is formed. The crimp terminal 6h is applied when the width of the upper side of the conductor pattern 6 having a trapezoidal cross section becomes, for example, about 3 μm by increasing the density of the conductor patterns 6 to be aligned. It can be small.

In FIG. 11B, the bottom surface of the semiconductor chip 12 has a plurality of COG connection terminals of about 50 μm × 50 μm.
(Bumps) 31 'are formed, and the crimp terminal 15' according to the present invention is formed on the glass substrate 14, and the crimp terminal 15 'whose upper surface is divided into a plurality of contact surfaces by forming a plurality of grooves. The flat terminals 31 'are brought into contact with each other, and the electrical connection by the contact is made by a photo-curing resin adhesive, a thermosetting resin adhesive, a thermoplastic resin adhesive, or a thermosetting resin and a thermosetting resin. It is configured to be maintained by the adhesive force and shrinkage stress of the adhesive agent 16 in which a plastic oil is mixed.

FIG. 12 is an explanatory view of an embodiment of the method of the present invention in which the bumps of the semiconductor device and their mating terminals are connected by two-step pressing so that no adhesive agent is sandwiched between them, and FIG. 13 is the method of the present invention shown in FIG. FIG. 14 is a diagram showing the relationship between the curing reaction rate and the heating temperature of the adhesive used in FIG. 14, FIG. 14 is a diagram showing the change over time in the contact resistance of the connection portion obtained by the method of the present invention in FIG. 12, and FIG. 15 is an auxiliary bump. FIG. 16 is an explanatory view of the basic configuration of the present invention to be used, FIG. 16 is an explanatory view of an embodiment of the present invention which uses an auxiliary bump (No. 1), and FIG. 17 is an explanatory view of an embodiment of the present invention which uses an auxiliary bump (that. 2), FIG. 18 is an explanatory diagram of a semiconductor device mounting method applied to the embodiment of the present invention, FIG. 19 is an explanatory diagram of a new bump array applied to the embodiment of the present invention, and FIG. 20 is a diagram of a bump to which the present invention is applied. FIG. 21 is an explanatory diagram of an embodiment, and FIG. 21 is an explanatory diagram of a crimp terminal provided with an adhesive inflow groove according to the present invention (part 1). , 22 is an explanatory view of the crimp terminals provided an adhesive inflow groove by the present invention (Part 2), Fig.
23 is an explanatory view (3) of the crimp terminal provided with the adhesive inflow groove according to the present invention, FIG. 24 is an explanatory view (4) of the crimp terminal provided with the adhesive inflow groove according to the present invention, and FIG. 25 is the present invention 26 is an explanatory view (5) of the crimp terminal provided with the adhesive inflow groove by FIG.
Is an explanatory view (6) of a crimp terminal provided with an adhesive inflow groove according to the present invention, and FIG. 27 is an explanatory view of a connection method of the crimp terminal shown in FIGS.

In FIG. 12A, electrode terminals 42 aligned in two rows in the thickness direction of the drawing paper are formed on the surface of the printed wiring board (or glass substrate) 41, and the electrode terminals 42 are arranged between the rows. Applies an adhesive, for example a photocurable adhesive 44. Then, the crimp terminals (bumps) 31 according to the present invention are formed on the semiconductor device (semiconductor chip) 12.

As the adhesive 44, a thermosetting resin, a thermoplastic resin, a mixed resin of thermosetting and thermoplastic resins, a photocurable resin, and a liquid or sheet type can be used. 44 may be attached to the semiconductor chip 12.

After the semiconductor chip 12 and the wiring board 41 have been aligned with each other, the amount of the adhesive 44 is adjusted by pressing the semiconductor chip 12 as shown in FIG. (The end surface of the part) 31a is brought into contact with the tip of the electrode terminal 42 to expand the diameter, and the amount is such that it does not reach the crimp terminal 31 and the electrode terminal 42, and the semiconductor chip 12 is pressed further strongly and the crimp terminal 31
When the protrusion of the crimp terminal 31 is crushed so that the connection between the crimp terminal 31 and the electrode terminal 42 is sufficient, the crimp terminal 31 and the electrode terminal 42 are expanded to the entire lower surface of the semiconductor chip 12 as shown in FIG. 12C. When the adhesive 44 is in the form of a sheet, the optimum width b is the thickness of the adhesive 44, the facing distance of the crimp terminal 31 is a, and the height of the crimp terminal 31 is h _0. If so, b = a · h
It is determined from ₀ / h.

Therefore, the adhesive 44 is hardened, for example, heated to 180 ° C. to be hardened, and as shown in FIG. 12D, the adhesive 44 is adhered to the entire lower surface of the semiconductor chip 12.
Is completed. In one embodiment in which the adhesive 44 is pushed and spread in two steps to completely cover the crimp terminal 31 and prevent non-uniform residual strain,
The pressing force of 12 is 4 × 9 mm and the pressing force of the first pressing is about 5 kg and the pressing force of the second pressing is 20-25 kg against the semiconductor chip 12 on which 180 crimp terminals 31 are formed. was gotten.

In the embodiment described with reference to FIG. 12, the first pressing force and the second pressing force are clearly explained. However, since the first pressing force can be obtained in the process of finally applying the required pressing force (second pressing force), it is not necessary to clearly separate it as described above.

In FIG. 13, the horizontal axis represents the heating temperature (° C.) and the vertical axis represents the curing reaction rate (%) of the thermosetting resin. As is clear from the figure, Regarding the curing reaction, when the curing temperature is about 180 ° C, the curing reaction rate at about 140 ° C becomes 30 to 60%, and temporary adhesion becomes possible.

Therefore, in the embodiment described with reference to FIG. 12, the first pressing force is applied under the heating condition in which the curing reaction rate of the thermosetting adhesive 44 is 30 to 60%, and the crimp terminal 31 is applied.
The electrode terminal 42 and the crimp terminal 31 and the electrode terminal 42.
After the connection state with and is tested, the second pressing force is applied and the heating temperature is raised to completely cure the adhesive 44.

In FIG. 14, the horizontal axis represents time (hr) and the vertical axis represents the figure.
It is the contact resistance (mΩ) between the crimp terminal 31 and the electrode terminal 42 described using 12. In the figure, the characteristic (a) connecting the measured values shown by ▽,
The characteristics (b) connecting the measured values shown by ○, the characteristics connecting the measured values shown by △ (c), and the characteristics connecting the measured values shown by ● (d) are the contact resistance in an environment of temperature 85 ° C and humidity 85%. And the elapsed time.

However, the measured value ∇, the characteristic (a) has a sample having the connecting portion described with reference to FIG. 12, and the measured value ◯, the characteristic (b) has the conventional COG connecting portion described with reference to FIG. 32. Sample, measured value △, characteristic (c) is the sample with the conventional connection described with reference to FIG. 33, measured value ●, characteristic (d) is the sample with the conventional connection described with reference to FIG. Correspond.

As is clear from FIG. 14, the contact resistance of the connection portion described with reference to FIG. 12 is lower than that of the other samples, and
Almost no change over 400 hours. On the contrary, the characteristic (c), which has a lower resistance than the characteristics (b) and (d) in the initial stage,
The contact resistance sharply increases after 20 hours. It is speculated that the increase in contact resistance in the characteristic (c) is caused by the gradual relaxation of the internal stress of the cured adhesive resin 19 and the decrease in the contact area between the electrode 13 and the wiring 18.

15 (a) and 15 (b), for example, on a bump 45 provided on the semiconductor chip 12 and having two sides of 120 μm × 120 μm and a height of about 10 μm, for example, two sides of 100 μm × 60.
Main bumps (crimp terminals) of μm and height of 10 μm 46
And an auxiliary bump (auxiliary terminal) 47 having two sides of 50 μm × 25 μm and a height of 5 μm. Main bump 46
The grooves 31 and 32 are provided in two intersecting directions (vertical and horizontal) to form a plurality of (12 in the figure) abutting surfaces 31a.

The bumps 46 and 47, which are made of gold or the like and are provided on the conventional bump 45, are formed by a usual manufacturing method, for example, I on a glass substrate.
A TO film is deposited, a resist mask having a predetermined through hole is formed thereon, gold is plated on the ITO film exposed in the through hole, and then transferred to the bump 45.

However, the short auxiliary bumps 47 are transferred prior to the tall main bumps 46, and then the grooves 31, 32 of the main bumps 46 are formed by stamping or the like. Figure
In 15 (c), if the conductor terminals 15 for connecting the bumps 46 are formed on the glass substrate 14 and the crush amount of the bumps 46 suitable for connecting the bumps 46 to the conductor terminals 15 is about 3 μm, The gap between 47 and the conductor terminal 15 is about 2 μm.

Therefore, the gaps between all the auxiliary bumps 47 and the conductor terminals 15 are measured by using a laser microscope or the like, and if the value is 2 μm or less, the connection of the bumps 47 can be regarded as normal.

Since an adhesive is required to maintain the connection between the bumps 46 and the conductor terminals 15, the gap between the auxiliary bumps 47 and the conductor terminals 15 is measured through the adhesive. In such a measurement, the laser microscope can detect without being obstructed by the adhesive.

FIG. 16 is a plan view (a) showing an elliptical main bump (crimp terminal) and an auxiliary bump, and a sectional view (b) taken along the line XX ′ when the main bump is connected to a mating terminal. . In Figure 16 (a), the major axis is 100 μm, the minor axis is 60 μm, and the height is 10 μm on the bump 45, which has 120 μm × 120 μm on two sides and a height of about 10 μm.
A main bump 48 of m 2 and an auxiliary bump 49 having a long diameter of 40 μm, a short diameter of 25 μm and a height of 5 μm are provided.

However, the gold main bump 48 and the auxiliary bump
49 is arranged in a zigzag pattern and is configured to prevent a short circuit between the adjacent bumps 48 even when the bumps 48 are excessively crushed, and the upper surface of the main bump 48 has grooves 31, 32 (see FIG. 15). ), It is divided into a plurality of contact surfaces 31a (see FIG. 15).

Therefore, after the main bump 48 and the conductor terminal 15 which is the connection partner thereof are aligned, a pressure of, for example, about 10 kg / cm ² is applied for about 20 seconds while heating the semiconductor chip 12 to about 200 ° C. When the semiconductor chip 12 is pressed against the glass substrate 14, the projections of the bumps 48 due to the formation of the grooves (31, 32) are plastically deformed and electrically connected to the conductor terminals 15, as shown in FIG. 16B. Become.

Therefore, whether the crush amount of the bump 48 is appropriate, that is, whether the electrical connection between the bump 48 and the conductor terminal 15 is good or not is determined by checking the gap between the auxiliary bump 49 and the conductor terminal 15 with a laser microscope as described with reference to FIG. It will be possible to measure and confirm with such as.

FIG. 17 is a plan view showing an elliptical main bump (crimp terminal) and a pair of auxiliary bumps (a), and a sectional view taken along the line XX 'when the main bump is connected to a mating terminal (b).
Is.

In FIG. 17 (a), on the bump 45 provided on the semiconductor chip 12 with two sides of 120 μm × 120 μm and a height of about 10 μm, the major axis is 35 μm, the minor axis is 10 μm, and the height is The second auxiliary bump 50 of 5 μm has a major axis of 50 μm and a minor axis of
1st auxiliary bump 51 with 35 μm and height of 7 μm and major axis 1
A main bump 52 having a diameter of 00 μm, a short diameter of 40 μm and a height of 10 μm is provided.

However, a pair of auxiliary bumps 50, 5 made of gold
1 and the main bump 52 are arranged in a staggered pattern,
Even if the bump 52 is over-crushed, the adjacent bump
It is configured to prevent a short circuit between 52, and the upper surface of the main bump 52 has a plurality of contact surfaces formed by forming grooves 31 and 32 (see FIG. 15).
It is divided into 31a (see Fig. 15).

Therefore, after aligning the main bump 52 and the conductor terminal 15 which is a connection partner thereof, while heating the semiconductor chip 12 to about 200 ° C., for example, a pressure of about 10 kg / cm ² is applied for about 20 seconds, When the semiconductor chip 12 is pressed against the glass substrate 14, the protrusions of the bumps 52 due to the formation of the grooves (31, 32) are plastically deformed and electrically connected to the conductor terminals 15, as shown in FIG. 17B. Become.

When the semiconductor chip 12 is pressed toward the glass substrate 14, the auxiliary bump 51 plays a role of a stopper for the predetermined crush amount of the main bump 52 of 3 μm. The quality of the electrical connection with the conductor terminal 15 can be confirmed by measuring the gap between the auxiliary bump 50 and the conductor terminal 15 with a laser microscope or the like as described with reference to FIG.

In the embodiment shown in FIG. 18, the semiconductor chip 12 is pressed toward the wiring board 41 to expand the diameter of the adhesive 44 adhered to one of the wiring board 41 and the semiconductor chip 12. The pressing force of is as small as possible.

In FIG. 18, (a) is a side view in which the bumps (crimping terminals) 31 of the semiconductor chip 12 are brought into contact with the electrode terminals 42 by the first pressing, and then the second pressing force stronger than the first pressing force. When the pressing force is applied, all the bumps 31 are covered with the adhesive 44 as shown in the side view (b) through the state of the side view (b).

In the figure, (d) shows the relationship between the bump 31 and the adhesive 44 in the side view (a), and (e) shows the relationship between the bump 31 and the adhesive 44 in the side view (b). Showing the figure,
(F) is a diagram showing the relationship between the bump 31 and the adhesive 44 in the side view (C).

When the adhesive 44 is sandwiched between the wiring board 41 on which the electrode terminals 42 are formed and the semiconductor chip 12, and the semiconductor chip 12 is pressed toward the wiring board 41 by the first pressing, for example, a pressing force of 5 kg, As shown in 18 (a) and 18 (d), the contact surface 31a (see FIG. 9) formed on the bump 31 is electrically connected to the tip of the electrode terminal 42. At that time, the pre-quantified adhesive
The diameter of the 44 is increased so that it does not reach the tip of the bump 31 and the electrode terminal 42.

Next, when the semiconductor chip 12 is pressed toward the wiring board 41 for the second time, for example, with a pressing force of about 10 kg, the adhesive 44 is the same as shown in FIGS. 18 (b) and 18 (e). After the diameter is expanded to the extent that it covers the bumps 31 in the center of the row, the adhesive 44 expands so that all the bumps 31 are covered, as shown in FIGS. The agent 44 is cured to complete the mounting of the semiconductor chip 12.

In the mounting of the semiconductor chip 12, by applying the bumps 31 according to the present invention, the second pressing force is 1/2 that when the conventional bumps 13 (see FIG. 33) are used.
For example, it is possible to reduce from about 20 kg in the prior art to about 10 kg.

FIG. 19 is an explanatory view of an embodiment for further reducing the semiconductor chip pressing force as compared with the embodiment of FIG.
The semiconductor chip 12 'with the bumps 31 formed in two rows is
When the column-to-column distance of 31 is a, the distance b between the column-end bump 31 and the semiconductor chip end is set to 1/2 or more of the distance a.

As shown in FIG. 18 (e), the spread of the adhesive 44 due to the pressing force is hard to spread at the four corners of the semiconductor chip 12. It is the embodiment of FIG. 19 that the semiconductor chip pressing force is reduced by solving such a problem, and as a result, as shown by the broken line in FIG. 19, the diameter of the adhesive 44 that covers all the bumps 31 is expanded. In addition, the pressing force corresponding to the second pressing force in the embodiment of FIG. 18 can be reduced to about 80%.

In the embodiment described with reference to FIG. 18 or FIG. 19, the first pressing force and the second pressing force have been clearly explained. However, since the first pressing force can be obtained in the process of finally applying the required pressing force (second pressing force), it is not necessary to clearly separate it as described above.

In FIG. 20, continuous chevron-shaped projections 53 are formed on the bumps 31 _{-1 to} 31 _-6 by etching or stamping means.
Alternatively, a discontinuous chevron ridge 54, a square protrusion 55, a square protrusion 56, a conical protrusion 57, or a columnar protrusion 58 is formed, and such bumps 31 _{-1 to} 31
_-6 can be used similarly to the bump 31 (see FIG. 9) in which the contact surface 31a is formed by the grooves 32 and 33 (see FIG. 9).

In FIG. 21, a conductor pattern 6 is formed on the insulating film 3 by photoetching, and an adhesive 8 is formed.
On the upper surface of the crimp terminal 6j which is one end of the conductor pattern 6 adhered to the insulating film 3, for example, on the upper surface of each crimp terminal 6j having a length of about 3 mm, a groove 17d in the length direction of the conductor pattern 6 is formed. , A plurality of conductor patterns 6 across the width direction
(FIG. 2 shows two grooves).

The groove 17d for the inflow of the adhesive has a width of 2 μm and a depth of 1 to 2 μm, for example, and the groove 60 for adhering the adhesive 44 in a band shape.
Is deeper and wider than the groove 17d, and the grooves 17d and 60 are formed by etching or embossing.

In FIG. 22A, the insulating film 3 has
The conductor pattern 6 is formed by photo-etching, and is attached to the upper surface of the crimp terminal 6k which is one end of the conductor pattern 6 adhered to the insulating film 3 with the adhesive 8, for example, the upper surface of each crimp terminal 6k having a length of about 3 mm. Is a groove 17d in the length direction of the conductor pattern 6, a plurality of grooves 17e crossing the conductor pattern 6 in the width direction, and a plurality of grooves 17e crossing the conductor pattern 6 in the width direction.
(FIG. 2 shows two grooves).

The grooves 17d and 17e for inflowing the adhesive have a width of 2 μm and a depth of 1 to 2 μm, for example, and the band-shaped adhesive 44
The groove 60 for adhering is deeper and wider than the grooves 17d and 17e, and the grooves 17d, 17e, 60 are formed by etching or embossing.

22 (b), 22 (c), 22 (d), and 22 (e) are a plan view and a side view of the crimp terminals 6l, 6m, which are similar to the crimp terminal 6k. 22 (b) and 22 (c), the crimp terminal 6l, which is one end of the conductor pattern 6 and is similar to the crimp terminal 6k, has a plurality of triangular grooves 17f crossing the conductor pattern 6 in the width direction and a plurality of crimp terminals 17f.
(Two in the figure). The grooves 17f and 60 are formed by etching or embossing.

22 (d) and 22 (e), a crimp terminal 6m, which is one end of the conductor pattern 6 and is similar to the crimp terminal 6k, has a groove 17d in the length direction of the conductor pattern 6 and the conductor pattern 6 in the width direction. 17g with multiple rounded triangular grooves across
(Two in the figure). The grooves 17d, 17g, 60 are formed by etching or embossing.

The crimp terminals 6j, 6k, 6l, 6m are shown in FIG.
As shown in (b), attach the adhesive 44 to the groove 60, and
(See Fig. 7) When heated and pressed on top of each other, the crimp terminals 6j, 6
The k, 6l, 6m and the mating terminal 11 directly contact and electrically connect to each other, and a part of the adhesive 44 flows into the grooves 17d, 17e, 17f, 17g and hardens, and the crimping terminals 6j, 6k, 6l, 6m and mating terminal 11
Crimping terminals 6j, 6k, 6 without sticking to the electrical contact surface with
The connection between l and 6m and the mating terminal 11 will be maintained.

In FIG. 23A, the insulating film 3 has
The conductor pattern 6 is formed by photoetching, and is attached to the upper surface of the crimp terminal 6n, which is one end of the conductor pattern 6 adhered to the insulating film 3 with the adhesive 8, for example, the upper surface of each crimp terminal 6n having a length of about 3 mm. Forms a groove 17d in the lengthwise direction of the conductor pattern 6 and forms a bank 61 which is slightly thicker than the thickness of the conductor pattern 6 in the adhesive 8 which is separated from the tip of the crimp terminal 6n by an appropriate distance.

The space between the bank 61 extending in the direction orthogonal to the lengthwise direction of the conductor pattern 6 and the conductor pattern 6 is shown in FIG.
As shown in (b), this is a region where the adhesive 44 having substantially the same thickness as the conductor pattern 6 is attached.

As shown in FIG. 23 (C), the electrical connection between the crimp terminal 6n and the electrode terminal 42 formed on the wiring board 41 is performed even if a part of the adhesive 44 flows into the groove 17d and hardens. The agent 44 is maintained without the adhesive 44 sticking to the electrical contact surface.

In FIG. 24 (a), a heat-resistant protective film
A plurality of strip adhesives 44 are attached to 62 at the same pitch as the pitch of the crimp terminals provided with the adhesive inflow grooves at least in the width direction.

Then, as shown in FIG. 24 (b), the insulation film 3 and the protective film having the crimping terminal 6p formed so that the crimping terminal 6p having the adhesive inflow groove in the width direction and the adhesive 44 enter each other. Overlap 62 and heat and pressurize. However,
When the adhesive 44 is a thermosetting resin, the heating is performed at a temperature at which the resin is transferable and does not completely cure.

As a result, the softened adhesive 44 as shown in FIG. 24 (c) is filled between the formation of the crimp terminal 6p and the adhesive inflow groove and hardened, but the electrical contact surface 6b of the crimp terminal 6p. It is applied without the adhesive 44 attached to.

Therefore, at the time of electrical connection between the contact surface 6b and the connection partner, the adhesive 44 applied to the crimp terminal 6p.
Will be used to maintain the connection. In FIG. 25, the insulating film 3 and the adhesive 8 for adhering the plurality of crimp terminals 6n include a plurality of linear through holes intersecting in the length direction of the crimp terminals 6n, for example, a width of several tens of μm. Through hole 63
Has been opened.

In FIGS. 26 (a) and 26 (b), the adhesive 8 for adhering the insulating film 3 and the plurality of crimp terminals 6n is provided on the entire surface thereof or as shown in FIG. As shown in (b), a large number of through holes, for example, a through hole 64 having a diameter of several tens of μm, are formed while avoiding the pasted portion of the crimp terminal 6n.

A method of using the through holes 63 and 64 will be described with reference to FIG. In FIG. 27 (a), through holes 63, 6 are provided on the back surface of the insulating film 3 having the pressure-bonding terminals 6n attached to the front surface via the adhesive 8.
Adhesive 44 is applied or coated so as to close 4 and the crimp terminal 6n is opposed to the electrode terminal 42 which is the connection partner.

Therefore, when the heating / pressurizing wedge 65 disposed so as to face the adhesive 44 is used and the crimp terminal 6n is brought into contact with the electrode terminal 42, the softened adhesive is obtained as shown in FIG. 27 (b). 44 passes through the through holes 63 or 64 and flows into the periphery of the connection portion between the crimp terminal 6n and the electrode terminal 42, and the adhesive 44 is cured to complete the connection between the crimp terminal 6n and the electrode terminal 42. To do.

FIG. 28 is an explanatory view of an embodiment in which the crimp terminal of the present invention is connected by a clip without using an adhesive. Figure 28
In, the conductor pattern 68 protected by the protective film 67 is formed on the wiring board 66, and one end of the conductor pattern 68 is connected to the electrode terminal 42 by soldering. Then, a crimp terminal according to the present invention, for example, a crimp terminal 6d is formed on the other end of the conductor pattern 68, and the electrode terminal 11 and the crimp terminal 6d are crimped by utilizing the compressive force of the clip 67 having spring property.

At the time of such crimping, in the crimping terminal 6d which has already been described with reference to FIG. 1, the tips of the projections due to the formation of the grooves 17a and 17b are the contact surfaces 6b, and the projections are compressed by the clip 67. Because of plastic deformation, a simple and stable electrical connection can be secured.

[0125]

As described above, the crimp terminal according to the present invention, the connecting method using the terminal, and the mounting method of the semiconductor device are contacted at a number of points more than the conventional crimp terminal and the connection using the terminal. It is possible, and since the adhesive filled in the groove on the top of the crimp terminal contributes to maintaining the connection of the crimp terminal,
It has the effect of improving stability and reliability for electrical connection.

In particular, according to the present invention, a structure in which the adhesive does not enter the contact surface between the crimp terminal and the mating terminal, a two-step pressing structure for reducing the influence of distortion due to the adhesive, and a connection between the crimping terminal and the mating terminal are made by a microscope. By applying the configuration that can be confirmed by the above, the above effect becomes more remarkable.

[Brief description of drawings]

FIG. 1 is a perspective view showing an embodiment of a crimp terminal according to the present invention (No. 1)

FIG. 2 is a perspective view showing an embodiment of the crimp terminal according to the present invention (No. 2)

FIG. 3 is a perspective view showing an embodiment of the crimp terminal according to the present invention (part 3).

FIG. 4 is an explanatory view of a first manufacturing example of the crimp terminal according to the present invention.

FIG. 5 is an explanatory view of a second manufacturing example of the crimp terminal according to the present invention.

FIG. 6 is an explanatory view of a third manufacturing example of the crimp terminal according to the present invention.

FIG. 7 is an explanatory diagram of a crimp terminal connection method according to an embodiment of the present invention.

FIG. 8 is a perspective view (No. 4) showing an embodiment of the crimp terminal according to the present invention and a cross-sectional view showing a connection state thereof.

FIG. 9 is an explanatory diagram of COG connection according to an embodiment of the present invention.

FIG. 10 is an explanatory view of a crimp terminal for COG connection according to another embodiment of the present invention.

FIG. 11 is an explanatory view of a crimp terminal and its COG connection according to still another embodiment of the present invention.

FIG. 12 is an explanatory view of an embodiment of the method of the present invention for pressing a semiconductor device in two steps.

FIG. 13 is a diagram showing the relationship between the curing reaction rate of the thermosetting adhesive and the heating temperature.

FIG. 14 is a diagram showing the change over time in the contact resistance of the connection portion according to the method of the present invention in FIG.

FIG. 15 is an explanatory diagram of a basic configuration of the present invention using an auxiliary bump.

FIG. 16 is an explanatory diagram of an embodiment of the present invention using an auxiliary bump (No. 1)

FIG. 17 is an explanatory diagram of an embodiment of the present invention using an auxiliary bump (No. 2)

FIG. 18 is an explanatory diagram of a semiconductor device mounting method applied to the embodiment of the present invention.

FIG. 19 is an explanatory diagram of a new bump array applied to the embodiment of the present invention.

FIG. 20 is an explanatory diagram of an example of a bump to which the present invention has been applied.

FIG. 21 is an explanatory view of a crimp terminal provided with an adhesive inflow groove according to the present invention (No. 1)

FIG. 22 is an explanatory view of a crimp terminal provided with an adhesive inflow groove according to the present invention (part 2).

FIG. 23 is an explanatory view of a crimp terminal provided with an adhesive inflow groove according to the present invention (part 3).

FIG. 24 is an explanatory view of a crimp terminal provided with an adhesive inflow groove according to the present invention (Part 4).

FIG. 25 is an explanatory view (5) of the crimp terminal provided with the adhesive inflow groove according to the present invention.

FIG. 26 is an explanatory view (6) of the crimp terminal provided with the adhesive inflow groove according to the present invention.

FIG. 27 is an explanatory diagram of a connection method for the crimp terminals shown in FIGS.

FIG. 28 is an explanatory view of an example of connecting the crimp terminal of the present invention with a clip.

FIG. 29 is a plan view showing a configuration example of a display unit of a liquid crystal display device.

FIG. 30 is a plan view showing a schematic configuration of an example of a semiconductor device mounting insulating film.

FIG. 31 is an explanatory view of a conventional terminal connection method using an anisotropic conductive resin film.

FIG. 32 is an explanatory diagram of a semiconductor device mounting method by COG connection.

FIG. 33 is an explanatory view of a conventional example in which an adhesive is not sandwiched between a bump and its mating terminal.

[Explanation of symbols]

1a is a glass substrate (heat resistant insulating substrate) 3 is a heat resistant insulating film 6 is a conductor pattern formed by patterning a metal foil 6b, 31a, 38a is a contact surface of a crimp terminal 6d, 6e, 6f, 6g, 6h, 6i, 6j , 6k, 6l, 6m, 6n, 31,36,46,48,52 are crimp terminals 9,16,25,44 are adhesives 11,15,42 are mating terminals 12 are semiconductor devices (semiconductor chips) 14 are semiconductors The device mounting board 16 is a thermosetting resin, a thermoplastic resin, or a mixed resin of thermosetting resin and thermoplastic resin, or an adhesive of a photocurable resin.17a, 17b, 17c, 32, 33, 34, 35 are crimp terminals. Groove 17d formed on the upper surface is an adhesive inflow groove 47, 49, 50 is an auxiliary bump.

Front page continued (72) Inventor Toshiaki Sukeda 1015 Kamiodanaka, Nakahara-ku, Kawasaki-shi, Kanagawa, Fujitsu Limited 72) Inventor Yoshiaki Maruyama 1015 Kamiodanaka, Nakahara-ku, Kawasaki City, Kanagawa Prefecture, Fujitsu Limited (72) Inventor Eiji Hito, 1015, Kamikodanaka, Nakahara-ku, Kawasaki City, Kanagawa Prefecture 1015 Kamiodanaka, Nakahara-ku, Kawasaki-shi, Japan Within Fujitsu Limited (72) Inventor Hiroaki Kobayashi 1015, Kamikodanaka, Nakahara-ku, Kawasaki-shi, Kanagawa Within Fujitsu Limited

Claims (19)

[Claims] 1. In a crimp connection in which an abutting surface of the crimp terminal is brought into contact with a mating terminal and an electrical connection by the contact is maintained by an adhesive, the crimp terminal (11, 15) facing the mating terminal (11, 15) is provided. 6d, 6e, 6f, 6
g, 6h, 6i, 31,36,46,48,52) has multiple grooves (17a, 17
b, 17c, 32, 33, 34, 35), and the upper surface is divided into a plurality of corresponding contact surfaces (6b, 31a, 38a) by the plurality of grooves. . 2. The contact surface (6b) of the upper surface of the crimp terminal (6d, 6e, 31, 36, 46) which is patterned from a metal foil and has the same thickness as that of the metal foil has the upper surface thereof First divided in the length direction
Groove (17a) and a second groove that divides the upper surface in the width direction
It is formed by (17b), The crimp terminal of Claim 1 characterized by the above-mentioned. 3. The contact surface (6b) on the upper surface of the crimp terminal (6f), which is patterned from a metal foil and has the same thickness as the metal foil.
The crimp terminal according to claim 1, wherein the crimp terminal is formed by a groove (17a) that divides the upper surface in the longitudinal direction. 4. The abutting surface on the upper surface of the crimp terminal (6g, 6h), which has a pattern formed from a metal foil and has the same thickness as the metal foil.
The crimp terminal according to claim 1, wherein the (6b) is formed by a groove (17b) dividing the upper surface in the width direction. 5. The contact surface (6b) on the upper surface of the crimp terminal (6i), which is patterned from a metal foil and has the same thickness as the metal foil.
Is a groove that divides the upper surface in an oblique direction with respect to the length direction.
The crimp terminal according to claim 1, wherein the crimp terminal is formed of (17c). 6. The crimp terminal (6d, 6e, 6f, 6g, 6h, 6i) is formed at an end of a conductor pattern (6) formed on a wiring board. Alternatively, the crimp terminal according to claim 3, claim 4, or claim 5. 7. The crimp terminal (31, 36, 46, 48, 52) is a bump formed on a semiconductor device (12), and the upper surface of the bump is divided by the groove (32, 33, 34, 35). The crimp terminal according to claim 1, wherein 8. The crimp terminal according to claim 1, wherein the groove (17a, 17b, 17c, 32, 33, 34, 35) is formed by etching. 9. The crimp terminal according to claim 1, wherein the groove (17a, 17b, 17c, 32, 33, 34, 35) is formed by a plastic deformation process for pressing a die. . 10. The crimp terminal (6d, 6e, 6f, 6f, 6e, 6f,
6g, 6h, 6i) on the other side of the heat-resistant insulating film (3) and the heat-resistant insulating substrate (1a) with the crimp terminal
(11) is formed, the mating terminal and the crimping terminal are overlapped with the adhesive (24, 25) interposed, and the contact surface of the crimping terminal is brought into contact with the mating terminal, and the mating terminal and the corresponding contact are contacted. A method for connecting crimp terminals, characterized in that the adhesive is cured in a state in which the surfaces are in contact with each other. 11. A crimp terminal (31, 36, 46, 48, 52) according to claim 7 is formed on a semiconductor device (12), and the crimp terminal is provided on a substrate (14) on which the semiconductor device is mounted. The mating terminal (15) to be connected is formed, the mating terminal and the crimping terminal are overlapped with the adhesive (16) interposed, and the abutting surface (31a, 38a) of the crimping terminal is brought into contact with the mating terminal. A method for mounting a semiconductor device, wherein the adhesive is cured in a closed state. 12. The semiconductor device (12) is formed with the crimp terminal (31, 36, 46, 48, 52) according to claim 7, and the board (14) on which the semiconductor device is mounted is provided with the crimp terminal. A mating terminal (15) to be connected is formed, and the crimping terminal is formed on the mating terminal forming surface of the semiconductor device or the mating terminal forming surface of the substrate when the semiconductor device is pressed toward the substrate. An adhesive (44) is applied that does not spread to the formation area of the crimp terminal even if it abuts, and that spreads so as to cover the crimp terminal due to the progress of the pressing, and the adhesive covers the crimp terminal. A method for mounting a semiconductor device, which comprises: curing in an open state. 13. A crimp connection (6j, 6j, which opposes the mating terminal (11) in a crimp connection in which an abutting surface of the crimp terminal is brought into contact with the mating terminal and the electrical connection by the corresponding contact is maintained by an adhesive. 6k, 6l, 6m) is provided with an adhesive inflow groove (17d, 17f, 17g) and an adhesive sticking groove (60) communicating with the adhesive inflow groove on the upper surface of the adhesive sticking groove. A crimp terminal, characterized in that the fluidized adhesive (44) is filled in the adhesive inflow groove. 14. The crimping terminal (6n) facing the mating terminal (11) in a crimping connection in which the contact surface of the crimping terminal is brought into contact with the mating terminal and the electrical connection by the corresponding contact is maintained by an adhesive. On the upper surface of
An adhesive inflow groove (17d) is provided which is open at the tip surface and extends in the lengthwise direction, and the board on which the crimp terminal is formed is separated from the tip surface of the crimp terminal by an appropriate distance, and An embankment that is appropriately higher than the crimp terminal is provided, and the adhesive (44) that is affixed and fluidized between the tip surface of the crimp terminal and the embankment is filled in the adhesive inflow groove (17d), and the crimp A method for connecting crimp terminals, characterized in that the electrical connection between the terminal and the mating terminal is maintained. 15. In a crimp connection in which an abutting surface of the crimp terminal is brought into contact with a mating terminal and the electrical connection by the contact is maintained by an adhesive, the substrate having the crimp terminal (6n) formed on the surface is: A through hole is provided through the substrate in its thickness direction, and the adhesive (44) attached to the back surface of the substrate is fluidized and poured into the surface of the substrate, and the electrical connection between the crimp terminal and the mating terminal is made. The periphery of the electrical contact surface to be adhered to maintain the connection of the electrical contact.
A method for connecting crimp terminals characterized in. 16. The method for mounting a semiconductor device according to claim 12, wherein the adhesive (44) is the crimp terminal (31, 36, 46, 48, 5).
In the state of pressing without spreading to the formation region of 2), temporary bonding is performed by curing the adhesive so that the curing reaction rate becomes 30 to 60%, and in the temporary bonding state, the mating terminal is energized. A method for mounting a semiconductor device, comprising: testing an electrical connection state to the crimp terminal, advancing the pressing so that the adhesive covers the crimp terminal, and then completely curing the adhesive. . 17. The method of mounting a semiconductor device according to claim 12, wherein the semiconductor device (12) is paired with the crimp terminal (46, 48), and the crimp terminal is used as the mating terminal (15). Auxiliary bumps (47, 49) having a height that allows a predetermined gap to be formed between the contact terminal and the mating terminal are arranged, and the gap is measured to determine whether or not the crimp terminal and the mating terminal are in contact with each other. A method for mounting a semiconductor device, comprising: determining. 18. The method for mounting a semiconductor device according to claim 12, wherein the crimp terminal (52), a first auxiliary bump (51) which is lower than the crimp terminal by a predetermined amount, and which is made of hard metal,
A second auxiliary bump (50), which is lower than the first auxiliary bump, is placed side by side so that the mating terminal (1
5) The tip portion of the crimp terminal that is in contact with 5) is crushed and the first auxiliary bump is brought into contact with the mating terminal, and the tip of the crimp terminal is formed by the gap between the second auxiliary bump and the mating terminal. A method for mounting a semiconductor device, comprising: checking a crushed amount of a portion. 19. The crimp terminal (46, 48) and the auxiliary bump (47, 49) according to claim 17, or the crimp terminal (5 according to claim 18).
2), the first auxiliary bumps (51) and the second auxiliary bumps (50) are arranged in a zigzag pattern so that the crimp terminals and the mating terminals can be connected at high density. A method for mounting a semiconductor device, comprising: