JPH0526747Y2 - - Google Patents
Info
- Publication number
- JPH0526747Y2 JPH0526747Y2 JP1987102559U JP10255987U JPH0526747Y2 JP H0526747 Y2 JPH0526747 Y2 JP H0526747Y2 JP 1987102559 U JP1987102559 U JP 1987102559U JP 10255987 U JP10255987 U JP 10255987U JP H0526747 Y2 JPH0526747 Y2 JP H0526747Y2
- Authority
- JP
- Japan
- Prior art keywords
- conductive particles
- wiring
- resin
- thermoplastic resin
- wiring board
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000002245 particle Substances 0.000 claims description 30
- 239000000853 adhesive Substances 0.000 claims description 10
- 230000001070 adhesive effect Effects 0.000 claims description 10
- 238000009429 electrical wiring Methods 0.000 claims description 8
- 229920005992 thermoplastic resin Polymers 0.000 description 22
- 229920005989 resin Polymers 0.000 description 15
- 239000011347 resin Substances 0.000 description 15
- 238000000034 method Methods 0.000 description 9
- 239000000758 substrate Substances 0.000 description 7
- 230000007613 environmental effect Effects 0.000 description 6
- 238000002161 passivation Methods 0.000 description 6
- 229920002050 silicone resin Polymers 0.000 description 6
- 239000003566 sealing material Substances 0.000 description 5
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 239000003094 microcapsule Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- -1 polybutylene terephthalate Polymers 0.000 description 1
- 229920001707 polybutylene terephthalate Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29199—Material of the matrix
- H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83851—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
Landscapes
- Wire Bonding (AREA)
- Multi-Conductor Connections (AREA)
Description
【考案の詳細な説明】
〔産業上の利用分野〕
この考案は複数の端子を有する半導体素子と配
線基板あるいは配線基板同志を接続する電気配線
構造に係り、特に異方性導電樹脂を用いた電気配
線構造の改良に関する。[Detailed description of the invention] [Industrial application field] This invention relates to an electrical wiring structure that connects a semiconductor element having a plurality of terminals and a wiring board, or between wiring boards, and particularly relates to electrical wiring structures using anisotropic conductive resin. Regarding improvement of wiring structure.
複数の端子を有するIC素子と配線基板あるい
は配線基板同志とを電気的に接続する方法として
種々の方法が提案されている。例えば、セラミツ
ク配線基板上にICチツプを搭載し、配線部分と
ICチツプのパツド部分を金線等によつて接続す
るワイヤボンデイング方式、先端部にバンプが形
成されたインナーリードを有するテープ状のポリ
イミドフイルムの前記バンプ部分をICチツプ等
のパツド部分と接続するテープ・オートメイテツ
ド・ボンデイング方式（TAB方式）、ICチツプの
パツド部分に形成したバンプ部を、リード配線が
形成された基板上に接続するフリツプチツプ方式
等がある。これらの方式はそれぞれ長所を有する
が、いずれの方式も自動化のためには比較的複雑
な装置工程を必要としている。
Various methods have been proposed for electrically connecting an IC element having a plurality of terminals to a wiring board or to each other. For example, an IC chip is mounted on a ceramic wiring board, and the wiring part and
A wire bonding method that connects the pad portion of an IC chip with a gold wire, etc.A tape that connects the bump portion of a tape-shaped polyimide film having an inner lead with a bump formed at the tip to the pad portion of the IC chip, etc. - There is an automated bonding method (TAB method), and a flip-chip method in which bumps formed on the pad of an IC chip are connected to a substrate on which lead wiring is formed. Although each of these methods has its advantages, each method requires relatively complicated equipment steps for automation.
そこで、導電性に異方性を持たせた接着剤を使
用する方式が提案されている（例えば特開昭60−
140790号公報参照）。これは配線基板上の配線パ
ターンと対応する他の配線パターンあるいはIC
チツプ等の素子のリード端子を接続する場合に、
両者間に絶縁性接着剤に例えば半田ボールの如き
導電粒子を分散させた接着剤層から成る連結シー
トを用い、接続部間を加圧加熱することにより該
部分に存在する導電粒子が溶融して導通状態とな
り、絶縁性接着剤はこの加熱により溶融流動する
ことにより必要個所のみ電気的に接続するもので
ある。 Therefore, methods using adhesives with anisotropic conductivity have been proposed (for example,
(See Publication No. 140790). This is another wiring pattern or IC that corresponds to the wiring pattern on the wiring board.
When connecting lead terminals of devices such as chips,
A connecting sheet consisting of an adhesive layer in which conductive particles such as solder balls are dispersed in an insulating adhesive is used between the two, and by applying pressure and heat between the connected parts, the conductive particles present in the parts are melted. A conductive state is established, and the insulating adhesive melts and flows due to this heating, thereby electrically connecting only the necessary locations.
ところが、配線パターン同志あるいは配線パタ
ーンと対応する素子のリード端子間を連結シート
を介して完全に対応させるために特別な加工工程
が必要であつたり、素子表面のパツシベーシヨン
膜を破壊したり、素子表面の配線パターンをも破
壊してしまうという問題点を有していた。 However, in order to completely connect the wiring patterns or between the lead terminals of the corresponding element via a connecting sheet, a special processing process is required, or the passivation film on the element surface may be destroyed, or the element surface may be damaged. This has the problem that it also destroys the wiring pattern.
そのため、IC等の素子にダメージを与えるこ
となく所定部分のみ接続することが出来るよう
に、素子のリード端子等の外部接続用パツド領域
と、配線基板上の配線パターン上の電極部分との
間〓をその他の部分より狭くする構造が提案され
ている（例えば特願昭61−192379号参照）。 Therefore, in order to be able to connect only specified parts without damaging elements such as ICs, there is a gap between the pad area for external connection such as the lead terminal of the element and the electrode part on the wiring pattern on the wiring board. A structure has been proposed in which the area is narrower than other parts (see, for example, Japanese Patent Application No. 1987-192379).
これは、第２図に示す如く、配線パターン２を
有する配線基板１の電極部２′と、IC素子３と接
続部３′とを接続するため導電粒子５と熱可塑性
樹脂６から成る連結シートを両者に介在させ、熱
圧着により電極部２′と接続部３′とを導通させ
る。このため電極部２′と接続部３′の間〓を他の
部分、特にパツシベーシヨン膜４の存在する部分
より狭く構成しておくものである。この構造にす
ることによりIC素子と配線基板の接続を完全な
ものにするとともにIC素子表面のパツシベーシ
ヨン膜を破壊することも防止できる。 As shown in FIG. 2, this is a connecting sheet made of conductive particles 5 and thermoplastic resin 6 for connecting the electrode part 2' of the wiring board 1 having the wiring pattern 2, and the IC element 3 and the connecting part 3'. is interposed between the two, and the electrode part 2' and the connecting part 3' are electrically connected by thermocompression bonding. For this reason, the space between the electrode portion 2' and the connecting portion 3' is configured to be narrower than other portions, particularly the portion where the passivation film 4 is present. With this structure, the connection between the IC element and the wiring board can be made perfect, and the passivation film on the surface of the IC element can be prevented from being destroyed.
この場合、導電粒子を含む連結シートの代わり
に導電粒子の周りに熱可塑性樹脂を被覆したマイ
クロカプセルを利用した場合も同様である。 In this case, the same applies when microcapsules in which conductive particles are coated with a thermoplastic resin are used instead of a connecting sheet containing conductive particles.
なお、第２図における８は耐環境性能をよくす
るためのシリコーン樹脂から成る封止剤である。 Note that 8 in FIG. 2 is a sealant made of silicone resin to improve environmental resistance.
ところでこのような電気配線構造を形成する場
合、本来導電粒子５と熱可塑性樹脂６との使用量
を熱圧着後の寸法に出来るだけ近ずける量にする
ことが望ましい。 By the way, when forming such an electrical wiring structure, it is desirable that the amounts of conductive particles 5 and thermoplastic resin 6 used be as close as possible to the dimensions after thermocompression bonding.
しかし、実際には導電粒子５と熱可塑性樹脂６
の量の制御が少ない方にばらつくと、IC素子３
と配線基板１との接続は該接続部のみとなり接着
力が劣る。そのため通常は若干多い方へ制御し、
パツシベーシヨン膜４と配線基板１間にも熱可塑
性樹脂６により接着力を存在させ、これらの接続
に用いられなかつた導電粒子５と熱可塑性樹脂６
がIC素子３のエツジ部分からはみ出すようにこ
れらの量が制御されている。 However, in reality, the conductive particles 5 and the thermoplastic resin 6
If the amount of control varies toward the smaller side, IC element 3
The connection between the wiring board 1 and the wiring board 1 is only at the connecting portion, and the adhesive strength is poor. Therefore, it is usually controlled to slightly increase the
Adhesive force is also created between the passivation film 4 and the wiring board 1 by the thermoplastic resin 6, and the conductive particles 5 and the thermoplastic resin 6 that are not used for connection between them are
These amounts are controlled so that they protrude from the edge portion of the IC element 3.
ところがこれらの導電粒子５熱可塑性樹脂６の
量が多いと、熱圧着時に電極部２′と接続部３′間
に位置した導電粒子５の間を通つて熱可塑性樹脂
が流れにくくなりIC素子３の下の領域に、前記
の余分の導電粒子５や熱可塑性樹脂６が予定量以
上に残留し、圧縮圧力を受けたまま冷却により固
化してしまう。そのためこの領域で配線基板１と
IC素子３間を離す方向に残留応力が残存する。
However, if the amount of these conductive particles 5 and thermoplastic resin 6 is large, it becomes difficult for the thermoplastic resin to flow through between the conductive particles 5 located between the electrode part 2' and the connection part 3' during thermocompression bonding, and the IC element 3 In the region below, the excess conductive particles 5 and thermoplastic resin 6 remain in an amount greater than the expected amount, and are solidified by cooling while being subjected to compression pressure. Therefore, in this area, wiring board 1 and
Residual stress remains in the direction of separating the IC elements 3.
残留応力が存在すると、装置の製造工程中に行
う高温テストや熱サイクルテスト等の耐環境試験
の際にIC素子３の下の領域に残存する熱可塑性
樹脂６がわずかに軟かくなりこの残留応力のため
熱可塑性樹脂６が膨張し接続部３′における接続
抵抗値が徐々に上昇するという問題点があつた。 If residual stress exists, the thermoplastic resin 6 remaining in the area under the IC element 3 becomes slightly soft during environmental resistance tests such as high temperature tests and thermal cycle tests performed during the manufacturing process of the device, and this residual stress Therefore, there was a problem that the thermoplastic resin 6 expanded and the connection resistance value at the connection portion 3' gradually increased.
また導電粒子５と熱可塑性樹脂６の量が多過ぎ
るとき、この接続部の形成後の残留応力の存在と
いう問題の他に次のような問題点があつた。即
ち、IC素子３の端部に多量の導電粒子５が熱可
塑性樹脂とともにたまつてしまい、この余分の導
電粒子５が隣接する配線間でシヨートをおこした
り、配線パターン２とIC素子３の端部とのシヨ
ートを引き起こすのである。このような問題点
は、異方性導電樹脂シートを使用する場合も同様
である。 Furthermore, when the amounts of the conductive particles 5 and the thermoplastic resin 6 are too large, the following problems occur in addition to the problem of the presence of residual stress after the connection is formed. That is, a large amount of conductive particles 5 accumulate at the edge of the IC element 3 together with the thermoplastic resin, and the excess conductive particles 5 may cause shoots between adjacent wirings or the edges of the wiring pattern 2 and the IC element 3. This causes a dispute with the department. Such problems also occur when an anisotropic conductive resin sheet is used.
従つて本考案の目的は上記問題点を解決するた
め、異方導電樹脂を用いて接続部を形成後、配線
基板と素子等の間に残存する残留応力の影響を少
なくし接続抵抗値を長期間安定させるとともに、
素子の歩留りを向上させ耐環境性能を向上させて
装置の信頼性を高める電気配線構造を提供するも
のである。 Therefore, the purpose of the present invention is to solve the above problems by reducing the influence of residual stress remaining between the wiring board and the element after forming the connection part using an anisotropic conductive resin, and increasing the connection resistance value. In addition to stabilizing the period,
The present invention provides an electrical wiring structure that improves the yield of devices, improves environmental resistance, and enhances the reliability of devices.
前記問題点を解決するため、この考案において
は、配線部材と被配線部材との間に導電性粒子と
接着剤とを含む連結シートを挟んで加圧接合した
電気配線構造において、配線部材と被配線部材の
いずれか一方に導電性粒子及び接着剤の一部を逃
がす逃がし溝を形成したものである。
In order to solve the above problems, in this invention, in an electrical wiring structure in which a connecting sheet containing conductive particles and an adhesive is sandwiched between the wiring member and the wired member and bonded under pressure, the wiring member and the wired member are bonded together under pressure. An escape groove is formed in either one of the wiring members to allow some of the conductive particles and adhesive to escape.
この構造にすることにより不要の金属粒子や樹
脂の逃げ溝の存在により、残留応力が緩和される
とともに、余分の導電粒子が、シヨートを起こし
たりすることがなくなる。 With this structure, residual stress is alleviated due to the presence of unnecessary metal particles and resin escape grooves, and excess conductive particles do not cause shoots.
第１図は本考案の一実施例を示し、ａはその断
面図、ｂは収縮性樹脂と封止材を省略した状態に
おける平面図である。第１図において１は配線基
板、２は配線パターンであり、該基板１上には電
極部２′を有する配線パターン２が形成されてい
る。３はIC素子、４はパツシベーシヨン膜、５
は導電粒子、６は熱可塑性樹脂、７は本考案の収
縮性樹脂、８は封止材、９は本考案の特徴的な樹
脂逃げ溝である。
FIG. 1 shows an embodiment of the present invention, in which a is a cross-sectional view and b is a plan view with the shrinkable resin and sealing material omitted. In FIG. 1, 1 is a wiring board, and 2 is a wiring pattern. On the board 1, the wiring pattern 2 having an electrode portion 2' is formed. 3 is an IC element, 4 is a passivation film, 5
1 is a conductive particle, 6 is a thermoplastic resin, 7 is a shrinkable resin of the present invention, 8 is a sealing material, and 9 is a resin relief groove characteristic of the present invention.
第１図においてIC素子３と配線パターン２は
第２図に示す従来例と同様の手段、即ち、例えば
NiやPdのような導電粒子５と、スチレン／アク
リロニトリル熱可塑性樹脂、ポリブチレンテフタ
レートのような熱可塑性樹脂６から成る連結シー
トとを加熱圧着することによつて、IC素子３の
接続部３′と配線パターン２の電極部２′とが溶融
された導電粒子５によつて接続されている。ここ
で連結シートの導電粒子５と熱可塑性樹脂６の使
用量を熱圧着後の完成寸法に出来るだけ近ずける
ようにその連結シートの大きさを調整するが、実
際には接着力を確実にするために若干多目に制御
している。そのために連結シートの熱圧着後、特
にIC素子３下面の接続部の間の間〓部に残留応
力が残る。 In FIG. 1, the IC element 3 and the wiring pattern 2 are arranged using the same means as in the conventional example shown in FIG.
By heat-pressing conductive particles 5 such as Ni or Pd and a connecting sheet made of a thermoplastic resin 6 such as styrene/acrylonitrile thermoplastic resin or polybutylene terephthalate, the connecting portion 3 of the IC element 3 is bonded. ' and the electrode portion 2' of the wiring pattern 2 are connected by molten conductive particles 5. Here, the size of the connecting sheet is adjusted so that the amount of conductive particles 5 and thermoplastic resin 6 used in the connecting sheet is as close as possible to the finished size after thermocompression bonding, but in reality, the adhesive strength must be ensured. In order to do this, the control is slightly increased. Therefore, after thermocompression bonding of the connection sheet, residual stress remains, especially in the area between the connection parts on the lower surface of the IC element 3.
そこで本実施例では硬化時に収縮応力の残る収
縮性樹脂があるシリコーン樹脂７でIC素子３を
コートーする。シリコーン樹脂７として、例えば
信越化学株式会社製の商品名KJR9050を使用す
る。 Therefore, in this embodiment, the IC element 3 is coated with a silicone resin 7, which is a shrinkable resin that leaves shrinkage stress upon curing. As the silicone resin 7, for example, product name KJR9050 manufactured by Shin-Etsu Chemical Co., Ltd. is used.
このシリコーン樹脂７の存在によりIC素子３
に残る残留応力は抑え込まれて、長期にわたつて
安定した接続抵抗を得ることができる。 Due to the presence of this silicone resin 7, the IC element 3
Residual stress remaining in the bonded area is suppressed, and stable connection resistance can be obtained over a long period of time.
なお、図中８は装置の耐環境性を向上させるた
めに被覆する封止材であつて、シリコーン樹脂７
と同じシリコーン樹脂を用いることができるが、
トーレシリコーン株式会社の商品名JCR6124を用
いることもできる。また、収縮性樹脂７として例
えば上記信越化学株式会社製の商品番号
KJR9050の如く耐環境性のある樹脂を用いた時
には封止材８は省略できる。 In addition, 8 in the figure is a sealing material coated to improve the environmental resistance of the device, and is a silicone resin 7.
The same silicone resin can be used, but
It is also possible to use Toray Silicone Co., Ltd.'s trade name JCR6124. In addition, as the shrinkable resin 7, for example, the above-mentioned product number manufactured by Shin-Etsu Chemical Co., Ltd.
The sealing material 8 can be omitted when an environmentally resistant resin such as KJR9050 is used.
次に本考案の特徴的な逃げ溝９について説明す
る。 Next, the characteristic relief groove 9 of the present invention will be explained.
導電粒子５と熱可塑性樹脂６の量を多目になる
ように異方性導電性の連結シートの大きさを制御
すると在留応力が残存するとともに、IC素子３
のエツジ部では導電粒子が圧力をうけないために
余分の導電粒子５が熱可塑性樹脂６とともにたま
つて隣接配線間でシヨートをおこす等の不都合を
生ずる。この実施例ではこの熱圧着後不要となる
余分の導電粒子５と熱可塑性樹脂６の逃げ溝９を
配線基板１に設けるものである。 When the size of the anisotropic conductive connecting sheet is controlled so that the amount of conductive particles 5 and thermoplastic resin 6 is increased, residual stress remains and the IC element 3
Since the conductive particles are not subjected to pressure at the edge portions, excess conductive particles 5 accumulate together with the thermoplastic resin 6, causing problems such as shoots between adjacent wirings. In this embodiment, escape grooves 9 for extra conductive particles 5 and thermoplastic resin 6 that are unnecessary after thermocompression bonding are provided in wiring board 1.
逃げ溝９は、例えば第１図ｂに示す如く配線パ
ターン２の存在しない残留応力が残在し易い部分
の配線基板１上に直接形成するものである。 The relief groove 9 is formed directly on the wiring board 1 in a portion where the wiring pattern 2 is not present and residual stress is likely to remain, for example, as shown in FIG. 1B.
また、他の実施例として、逃げ溝を形成した他
の絶縁材料を被覆した基板を用いてもよく、さら
に基板上に絶縁層を被覆しこの絶縁層でパターニ
ングして逃げ溝を形成した基板を用いてもよい。 In addition, as another embodiment, a substrate coated with another insulating material with relief grooves may be used, and a substrate further coated with an insulating layer and patterned with this insulating layer to form relief grooves may be used. May be used.
なお前記実施例においてはIC素子と配線基板
の接続について説明したが、本考案はこれに限ら
れるものではなく、配線部材と被配線部材間を異
方性導電樹脂で接続するものであれば、例えば液
晶のガラス基板とフレキシブルプリントサーキツ
ト基板（FPC基板）との接続等にも使用できる。
この場合逃げ溝９はガラス基板側に設けてもよい
し、逆にFPC基板側に設けてもよいし、両基板
に形成することもできる。 Although the connection between the IC element and the wiring board has been described in the above embodiment, the present invention is not limited to this, and any connection between the wiring member and the member to be wired using an anisotropic conductive resin may be used. For example, it can be used to connect a liquid crystal glass substrate and a flexible printed circuit board (FPC board).
In this case, the relief groove 9 may be provided on the glass substrate side, or conversely, on the FPC substrate side, or may be formed on both substrates.
また前記説明は異方性導電樹脂シートを使用し
た例について説明したが、勿論これのみに限定さ
れるものではなく、例えば異方性導電粒子を使用
した場合でも本考案は適用できる。 In addition, although the above description has been made with reference to an example in which an anisotropic conductive resin sheet is used, the invention is of course not limited to this, and the present invention can be applied even when anisotropic conductive particles are used, for example.
本考案の構成により配線部材と被配線部材間を
異方導電樹脂によつて電気的に接続する際に残存
する残留応力を収縮性樹脂の収縮応力により抑え
込むことができるのみならず、余分の導電粒子や
熱可塑性樹脂を逃げ溝によつて逃がし残留応力を
緩和することが出来る。そのため熱サイクルテス
ト等の環境試験や長期間に使用に対して接続抵抗
値の上昇を防ぎ、耐環境性能を向上させ、信頼性
の高い実装構造を得ることができる。
With the configuration of the present invention, it is possible not only to suppress the residual stress that remains when electrically connecting the wiring member and the wired member using the anisotropic conductive resin, but also to suppress the residual stress that remains due to the shrinkage stress of the shrinkable resin. The residual stress can be alleviated by allowing particles and thermoplastic resin to escape through the escape groove. Therefore, it is possible to prevent an increase in connection resistance value during environmental tests such as thermal cycle tests and long-term use, improve environmental resistance performance, and obtain a highly reliable mounting structure.
第１図は本考案の一実施例構成図、第２図は従
来例の構成図である。
１……配線基板、２……配線パターン、３……
IC素子、４……パツシベーシヨン膜、５……導
電粒子、６……熱可塑性樹脂、７……収縮性樹
脂、８……封止材、９……逃げ溝。
FIG. 1 is a block diagram of an embodiment of the present invention, and FIG. 2 is a block diagram of a conventional example. 1... Wiring board, 2... Wiring pattern, 3...
IC element, 4... Passivation film, 5... Conductive particles, 6... Thermoplastic resin, 7... Shrinkable resin, 8... Sealing material, 9... Relief groove.
Claims (1)
着剤とを含む連結シートを挟んで加圧接合した電
気配線構造において、配線部材と被配線部材のい
ずれか一方に導電性粒子及び接着剤の一部を逃が
す逃がし溝を形成したことを特徴とする電気配線
構造。 In an electrical wiring structure in which a connection sheet containing conductive particles and an adhesive is sandwiched between a wiring member and a wired member and bonded under pressure, conductive particles and adhesive are applied to either the wiring member or the wired member. An electrical wiring structure characterized by forming an escape groove that allows a portion of the electrical wiring to escape.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987102559U JPH0526747Y2 (en) | 1987-07-03 | 1987-07-03 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987102559U JPH0526747Y2 (en) | 1987-07-03 | 1987-07-03 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS648734U JPS648734U (en) | 1989-01-18 |
| JPH0526747Y2 true JPH0526747Y2 (en) | 1993-07-07 |
Family
ID=31332576
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1987102559U Expired - Lifetime JPH0526747Y2 (en) | 1987-07-03 | 1987-07-03 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0526747Y2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4669635B2 (en) * | 2001-07-12 | 2011-04-13 | 積水化学工業株式会社 | Method for producing fine particle arrangement conductive connection film |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61279139A (en) * | 1985-06-04 | 1986-12-09 | Nec Corp | Hybrid integrated circuit device |
-
1987
- 1987-07-03 JP JP1987102559U patent/JPH0526747Y2/ja not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61279139A (en) * | 1985-06-04 | 1986-12-09 | Nec Corp | Hybrid integrated circuit device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS648734U (en) | 1989-01-18 |
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