JPH06163773A - Lead frame for semiconductor device and its manufacture - Google Patents
Lead frame for semiconductor device and its manufactureInfo
- Publication number
- JPH06163773A JPH06163773A JP33364492A JP33364492A JPH06163773A JP H06163773 A JPH06163773 A JP H06163773A JP 33364492 A JP33364492 A JP 33364492A JP 33364492 A JP33364492 A JP 33364492A JP H06163773 A JPH06163773 A JP H06163773A
- Authority
- JP
- Japan
- Prior art keywords
- groove
- lead frame
- semiconductor
- resin
- grooves
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/183—Connection portion, e.g. seal
- H01L2924/18301—Connection portion, e.g. seal being an anchoring portion, i.e. mechanical interlocking between the encapsulation resin and another package part
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、ＩＣやＬＳＩ等の半導
体装置用のリードフレーム及びこれを製造する方法の改
良に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an improved lead frame for a semiconductor device such as an IC or LSI and a method for manufacturing the same.
【０００２】[0002]
【従来の技術】半導体装置用のリードフレームは、長尺
帯板材をプレス加工して、半導体を載せる半導体搭載部
と、後に導線によって半導体に接続される複数のリード
とを、長手方向に連続的に形成して成る。従来のリード
フレームには、例えば特開平３−５４８５１号のように
長手方向の溝を有するものがある。この溝は、半導体搭
載部上に搭載された半導体を樹脂モールドにて封止する
際に、リードフレームに対する樹脂の食い付きをよくす
るものである。このようなリードフレームの長手方向の
溝は、断面が矩形を成している。2. Description of the Related Art A lead frame for a semiconductor device is formed by pressing a long strip plate material to form a semiconductor mounting portion on which a semiconductor is mounted and a plurality of leads which are subsequently connected to the semiconductor by conductors in a longitudinal direction. It is formed by. Some conventional lead frames have a groove in the longitudinal direction as disclosed in, for example, JP-A-3-54851. The groove improves the biting of the resin with respect to the lead frame when the semiconductor mounted on the semiconductor mounting portion is sealed with the resin mold. Such a groove in the longitudinal direction of the lead frame has a rectangular cross section.
【０００３】[0003]
【発明が解決しようとする課題】上記従来のリードフレ
ームは、半導体を樹脂封止するのにリードフレームに対
する樹脂の食い付きが十分でなく、密着強度が低いし、
耐湿性も不十分であるという問題がある。従って、本発
明は、密着強度及び耐湿性を向上させたリードフレーム
を提供することを課題としている。In the above-mentioned conventional lead frame, the resin does not bite sufficiently onto the lead frame to seal the semiconductor with resin, and the adhesion strength is low.
There is a problem that the moisture resistance is also insufficient. Therefore, an object of the present invention is to provide a lead frame having improved adhesion strength and moisture resistance.
【０００４】[0004]
【課題を解決するための手段】上記課題を解決するた
め、本発明においては、長尺帯板材６に、複数組のリー
ド３と半導体搭載部２とを相隣接して連続的に形成して
成り、かつ半導体封止用樹脂Ｍのモールド封止部に樹脂
Ｍの喰い付き増強用の溝４，５を有するリードフレーム
１であって、この溝４，５は、その底部より開放部の幅
を狭く形成して半導体装置用リードフレーム１を構成し
た。さらに、具体的には、例えば溝５が半導体搭載部２
の半導体Ｓを取り囲むように形成した。そして、これら
のリードフレーム１を製造するに当たり、モールド封止
部に溝７，９を形成した後、この溝７，９の上部をこの
溝の幅より広く圧搾することにより溝４，５の底部より
開放部の幅を狭く形成する方法を採用した。In order to solve the above problems, according to the present invention, a plurality of sets of leads 3 and semiconductor mounting portions 2 are continuously formed adjacent to each other on a long strip plate member 6. The lead frame 1 has grooves 4 and 5 for strengthening the bite of the resin M in the mold sealing portion of the semiconductor sealing resin M, and the grooves 4 and 5 have a width from the bottom to the opening. To form a lead frame 1 for a semiconductor device. Further, specifically, for example, the groove 5 is the semiconductor mounting portion 2
Was formed so as to surround the semiconductor S. Then, in manufacturing these lead frames 1, after forming the grooves 7 and 9 in the mold sealing portion, the upper portions of the grooves 7 and 9 are squeezed wider than the width of the grooves to form the bottom portions of the grooves 4 and 5. The method of forming the width of the open portion narrower was adopted.
【０００５】[0005]
【作用】本発明のリードフレーム１は、長尺帯板材６
に、例えばローラＲやプレスＰなどにて溝７，９を形成
し、この溝７，９をさらに圧搾することにより、溝４，
５の縁部４ａ，５ａを内側に押し出して溝４，５の底部
より開放部の幅を狭く形成する。この溝４，５により、
半導体Ｓを樹脂モールドにて封止する際に、リードフレ
ーム１に対する樹脂Ｍの食い付きがよく、着接強度が増
し、良好な耐湿性を有することとなる。特に、半導体搭
載部２を取り囲むように溝５を形成すれば、さらに着接
強度が増す。The lead frame 1 of the present invention is composed of a long strip plate member 6
Then, the grooves 7 and 9 are formed by, for example, the roller R and the press P, and the grooves 7 and 9 are further squeezed to form the grooves 4 and 9.
The edges 4a and 5a of the groove 5 are extruded inward so that the width of the open portion is narrower than the bottom of the grooves 4 and 5. With these grooves 4 and 5,
When the semiconductor S is sealed with a resin mold, the resin M bites well onto the lead frame 1, the adhesion strength increases, and good moisture resistance is obtained. Particularly, if the groove 5 is formed so as to surround the semiconductor mounting portion 2, the attachment strength is further increased.
【０００６】[0006]
【実施例】本発明の実施例を図面について説明する。図
１（Ａ）はリードフレームの平面図、同図（Ｂ）はＡ−
Ａ線拡大断面図、（Ｃ）はＢ−Ｂ線拡大断面図、図２は
長尺帯板材のプレス成形前の状態の平面図、図３（Ａ）
は圧搾前の溝の拡大断面図、（Ｂ）は圧搾後の溝の拡大
断面図、図４（Ａ）は圧搾前の溝の拡大断面図、（Ｂ）
は圧搾後の拡大断面図、図５はリードフレームの断面図
である。図１（Ａ）において、１は半導体Ｓを載せる半
導体搭載部２と、後に導線Ｗによって半導体Ｓに接続さ
れるリード３とが、長手方向に相隣接して連続的に複数
形成されたリードフレームである。このリードフレーム
１の半導体搭載部２の樹脂封止部には長手方向の溝４が
形成されている。この溝４は、図１（Ｂ）に示すよう
に、二段構造を有し、下側の対向する両縁４ａ，４ａの
間隔が底部の幅より狭く、蟻溝状を成している。また、
半導体搭載部２の周縁部にも溝５が設けられている。こ
の溝５は、図１（Ｃ）に示すように、溝４と同様に二段
構造を有するが、下側の対向する両縁５ａ，５ａが上方
に傾いている。Embodiments of the present invention will be described with reference to the drawings. 1A is a plan view of the lead frame, and FIG. 1B is A-.
A line enlarged cross-sectional view, (C) is a BB line enlarged cross-sectional view, FIG. 2 is a plan view of the long strip plate material in a state before press molding, FIG.
Is an enlarged sectional view of the groove before squeezing, (B) is an enlarged sectional view of the groove after squeezing, FIG. 4 (A) is an enlarged sectional view of the groove before squeezing, (B)
Is an enlarged cross-sectional view after squeezing, and FIG. 5 is a cross-sectional view of the lead frame. In FIG. 1 (A), 1 is a lead frame in which a semiconductor mounting portion 2 on which a semiconductor S is placed and a plurality of leads 3 which are later connected to the semiconductor S by a conductive wire W are continuously formed adjacent to each other in the longitudinal direction. Is. A groove 4 in the longitudinal direction is formed in the resin sealing portion of the semiconductor mounting portion 2 of the lead frame 1. As shown in FIG. 1 (B), the groove 4 has a two-step structure, and the interval between the opposite edges 4a, 4a on the lower side is narrower than the width of the bottom portion and forms a dovetail groove shape. Also,
Grooves 5 are also provided in the peripheral portion of the semiconductor mounting portion 2. As shown in FIG. 1 (C), this groove 5 has a two-step structure similar to the groove 4, but both lower edges 5a, 5a facing each other are inclined upward.
【０００７】このリードフレーム１は、図２に示すよう
に、素材である長尺帯板材６を所要の基本的形状に圧延
加工する工程において、圧延ローラによって全体の外形
の成型と同時に、図３（Ａ）に示すような断面矩形の第
１溝７を形成する。次に、第１溝７の上部からローラＲ
にて圧搾して第１溝７より浅くかつ幅を広く、図３
（Ｂ）に示すような第２溝８を形成する。これによっ
て、第１溝７の縁４ａ，４ａが内側に水平に押し出され
て、溝７は蟻溝状になり溝４が形成される。この場合に
は、ローラＲによって圧搾された溝４部の金属素材が、
均等に周辺に逃げるため、溝４の両縁または裏側に膨出
部を生じることがなく、溝４の周辺が平滑な断面形状の
長尺帯板材６が得られる。As shown in FIG. 2, this lead frame 1 is formed by rolling a long strip plate material 6 as a raw material into a required basic shape at the same time as molding the entire outer shape by rolling rollers. A first groove 7 having a rectangular cross section as shown in FIG. Next, from the upper part of the first groove 7, the roller R
It is squeezed by and is shallower and wider than the first groove 7,
The second groove 8 as shown in (B) is formed. As a result, the edges 4a, 4a of the first groove 7 are extruded horizontally inward, and the groove 7 becomes dovetail-shaped to form the groove 4. In this case, the metal material of the groove 4 portion squeezed by the roller R is
Since it escapes evenly to the periphery, bulging portions are not formed on both edges or the back side of the groove 4, and the long strip plate member 6 having a smooth cross-section around the groove 4 can be obtained.
【０００８】この後、長尺帯板材６をプレス加工して、
複数の半導体搭載部２とリード３とを連続的に形成する
と共に溝５を形成する。溝５は、打ち抜き加工の際に、
広狭二種の断面矩形のパンチにて、ローラＲに代えて二
段圧搾することにより形成してもよいが、図４（Ａ）に
示すような断面矩形の第１溝９を形成した後、第１溝９
の上部から異形のパンチＰにて、図４（Ｂ）に示すよう
な第１溝９より幅の広い第２溝１０を形成してもよい。
これによって、第１溝９の縁５ａ，５ａが傾斜しつつ内
側に押し出されて、溝９は蟻溝状になり溝５が形成され
る。こうして、形成されたリードフレーム１の半導体搭
載部２に半導体Ｓを載せて導線Ｗにてリード３と接続し
た後、半導体Ｓを樹脂封止すると、図５に示すように、
モールディング樹脂Ｍが溝４，５に入り込んでリードフ
レーム１に対する食い付きがよくなる。After that, the long strip plate material 6 is pressed,
A plurality of semiconductor mounting portions 2 and leads 3 are continuously formed, and a groove 5 is formed. Groove 5 is used for punching
It may be formed by squeezing in two steps in place of the roller R with two kinds of wide and narrow punches having a rectangular cross section, but after forming the first groove 9 having a rectangular cross section as shown in FIG. First groove 9
The second groove 10 having a width wider than that of the first groove 9 as shown in FIG.
As a result, the edges 5a, 5a of the first groove 9 are pushed inward while being inclined, and the groove 9 becomes a dovetail groove, and the groove 5 is formed. After mounting the semiconductor S on the semiconductor mounting portion 2 of the lead frame 1 thus formed and connecting it to the lead 3 by the conductive wire W, when the semiconductor S is resin-sealed, as shown in FIG.
The molding resin M enters the grooves 4 and 5 to improve the biting of the lead frame 1.
【０００９】なお、上記実施例では、圧延加工工程で第
１溝７を形成した後に第２溝８をローラＲにて圧搾して
溝４を形成したが、これに代えて第１溝７を切削加工に
より形成してもよく、また第２溝８をプレス加工工程で
打ち抜きと同時に、あるいはその前後に形成してもよ
い。さらに、第２溝８を形成するローラＲの断面形状を
図４（Ａ）に示すパンチＰと同形状にすることができ
る。In the above embodiment, the first groove 7 is formed in the rolling process, and then the second groove 8 is squeezed by the roller R to form the groove 4, but instead of this, the first groove 7 is formed. It may be formed by cutting, or the second groove 8 may be formed at the same time as punching or before and after punching in a press working step. Further, the cross-sectional shape of the roller R forming the second groove 8 can be made the same as that of the punch P shown in FIG.
【００１０】[0010]
【発明の効果】以上のように、本発明は、長尺帯板材６
に、複数組のリード３と半導体搭載部２とを相隣接して
連続的に形成して成り、かつ半導体封止用樹脂Ｍのモー
ルド封止部に樹脂Ｍの喰い付き増強用の長手方向の溝
４，５を有するリードフレーム１であって、この溝４，
５の底部より開放部の幅を狭く形成して半導体装置用リ
ードフレーム１を構成し、特に、溝５が半導体搭載部２
の半導体Ｓを取り囲むように形成した。また、これらの
リードフレーム１を製造するに当たり、モールド封止部
に溝７，９を形成した後、この溝７，９の上部をこの溝
の幅より広く圧搾することにより溝４，５の底部より開
放部の幅を狭く形成する方法を採用したため、半導体Ｓ
を樹脂封止するのにリードフレーム１に対する樹脂Ｐの
食い付きがよく、密着強度が向上し、耐湿性を増すこと
ができるという効果を奏する。As described above, according to the present invention, the long strip plate material 6 is used.
A plurality of sets of leads 3 and the semiconductor mounting portion 2 are continuously formed adjacent to each other, and the resin M is embedded in the mold sealing portion of the resin M for semiconductor sealing in the longitudinal direction for increasing. A lead frame 1 having grooves 4, 5,
The width of the open portion is narrower than the bottom portion of the semiconductor device 5 to form the lead frame 1 for a semiconductor device.
Was formed so as to surround the semiconductor S. Further, in manufacturing these lead frames 1, after forming the grooves 7 and 9 in the mold sealing portion, the upper portions of the grooves 7 and 9 are squeezed to be wider than the width of the grooves so that the bottom portions of the grooves 4 and 5 are formed. Since the method of forming the width of the open portion narrower is adopted, the semiconductor S
The resin P is well bited to seal the resin with the lead frame 1, and the adhesion strength is improved, and the moisture resistance can be increased.
【図１】（Ａ）はリードフレームの平面図、（Ｂ）はＡ
−Ａ線拡大断面図、（Ｃ）はＢ−Ｂ線拡大断面図であ
る。FIG. 1A is a plan view of a lead frame, and FIG.
-A line expanded sectional view, (C) is a BB line expanded sectional view.
【図２】長尺帯板材のプレス成形前の状態の平面図であ
る。FIG. 2 is a plan view of a long strip plate material before press molding.
【図３】（Ａ）は圧搾前の溝の拡大断面図、（Ｂ）は圧
搾後の溝の拡大断面図である。FIG. 3A is an enlarged cross-sectional view of a groove before squeezing, and FIG. 3B is an enlarged cross-sectional view of a groove after squeezing.
【図４】（Ａ）は圧搾前の溝の拡大断面図、（Ｂ）は圧
搾後の拡大断面図である。FIG. 4A is an enlarged cross-sectional view of a groove before squeezing, and FIG. 4B is an enlarged cross-sectional view after squeezing.
【図５】リードフレームの縦断面図である。FIG. 5 is a vertical sectional view of a lead frame.
１ リードフレーム ２ 半導体搭載部 ３ リード ４ 溝 ４ａ 縁 ５ 溝 ５ａ 縁 ６ 長尺帯板材 ７ 第１溝 ８ 第２溝 ９ 第１溝 １０ 第２溝 Ｍ 半導体封止用樹脂 1 Lead Frame 2 Semiconductor Mounting Part 3 Lead 4 Groove 4a Edge 5 Groove 5a Edge 6 Long Strip Plate Material 7 First Groove 8 Second Groove 9 First Groove 10 Second Groove M Semiconductor Sealing Resin
Claims (3)
搭載部とを相隣接して連続的に形成して成り、かつ半導
体封止用樹脂のモールド封止部に樹脂の喰い付き増強用
の溝を有するリードフレームであって、 前記溝は、底部より開放部の幅が狭いことを特徴とする
半導体装置用リードフレーム。1. A long strip plate material, which is formed by continuously forming a plurality of sets of leads and a semiconductor mounting portion adjacent to each other, and enhances the resin encapsulation portion of the resin for semiconductor encapsulation. A lead frame having a groove for use in a semiconductor device, wherein the groove has a width of an opening portion narrower than a bottom portion thereof.
ことを特徴とする請求項１に記載の半導体装置用リード
フレーム。2. The lead frame for a semiconductor device according to claim 1, wherein the groove surrounds the semiconductor of the semiconductor mounting portion.
と半導体搭載部とを相隣接して連続的に形成する請求項
１又は２に記載のリードフレームの製造方法であって、 前記モールド封止部に溝を形成した後、この溝の上部を
この溝の幅より広く圧搾することにより溝の底部より開
放部の幅を狭くすることを特徴とする半導体装置用リー
ドフレームの製造方法。3. The method of manufacturing a lead frame according to claim 1, wherein a long strip of plate material is punched out to form a large number of sets of leads and semiconductor mounting portions adjacently and continuously. A method for manufacturing a lead frame for a semiconductor device, comprising forming a groove in a sealing portion, and squeezing an upper portion of the groove wider than a width of the groove so that a width of an opening portion is narrower than a bottom portion of the groove.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33364492A JPH06163773A (en) | 1992-11-19 | 1992-11-19 | Lead frame for semiconductor device and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33364492A JPH06163773A (en) | 1992-11-19 | 1992-11-19 | Lead frame for semiconductor device and its manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06163773A true JPH06163773A (en) | 1994-06-10 |
Family
ID=18268365
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33364492A Pending JPH06163773A (en) | 1992-11-19 | 1992-11-19 | Lead frame for semiconductor device and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06163773A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008155726A2 (en) * | 2007-06-21 | 2008-12-24 | Nxp B.V. | A carrier for electric packages and a method of structuring a carrier |
| JP2011091330A (en) * | 2009-10-26 | 2011-05-06 | Shindengen Electric Mfg Co Ltd | Resin-sealed semiconductor device and method or manufacturing the samef |
| CN102969297A (en) * | 2012-11-20 | 2013-03-13 | 无锡市威海达机械制造有限公司 | Pouring basin type lead frame structure |
| JP2014143326A (en) * | 2013-01-24 | 2014-08-07 | Transphorm Japan Inc | Semiconductor device, method of manufacturing semiconductor device, lead, and method of manufacturing lead |
| CN105575822A (en) * | 2015-12-28 | 2016-05-11 | 四川金湾电子有限责任公司 | Method for punching dovetail groove in front surface of lead frame of semiconductor |
| JP2020161671A (en) * | 2019-03-27 | 2020-10-01 | 日亜化学工業株式会社 | Light-emitting device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6378558A (en) * | 1986-09-22 | 1988-04-08 | Hitachi Ltd | Electronic device |
| JPH05235228A (en) * | 1991-02-28 | 1993-09-10 | Sanken Electric Co Ltd | Method of manufacturing electronic component |
-
1992
- 1992-11-19 JP JP33364492A patent/JPH06163773A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6378558A (en) * | 1986-09-22 | 1988-04-08 | Hitachi Ltd | Electronic device |
| JPH05235228A (en) * | 1991-02-28 | 1993-09-10 | Sanken Electric Co Ltd | Method of manufacturing electronic component |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008155726A2 (en) * | 2007-06-21 | 2008-12-24 | Nxp B.V. | A carrier for electric packages and a method of structuring a carrier |
| WO2008155726A3 (en) * | 2007-06-21 | 2009-03-05 | Nxp Bv | A carrier for electric packages and a method of structuring a carrier |
| JP2011091330A (en) * | 2009-10-26 | 2011-05-06 | Shindengen Electric Mfg Co Ltd | Resin-sealed semiconductor device and method or manufacturing the samef |
| CN102969297A (en) * | 2012-11-20 | 2013-03-13 | 无锡市威海达机械制造有限公司 | Pouring basin type lead frame structure |
| JP2014143326A (en) * | 2013-01-24 | 2014-08-07 | Transphorm Japan Inc | Semiconductor device, method of manufacturing semiconductor device, lead, and method of manufacturing lead |
| CN105575822A (en) * | 2015-12-28 | 2016-05-11 | 四川金湾电子有限责任公司 | Method for punching dovetail groove in front surface of lead frame of semiconductor |
| JP2020161671A (en) * | 2019-03-27 | 2020-10-01 | 日亜化学工業株式会社 | Light-emitting device |
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