JP3235606B2 - Lead frame, method of manufacturing the same, and semiconductor device - Google Patents
Lead frame, method of manufacturing the same, and semiconductor deviceInfo
- Publication number
- JP3235606B2 JP3235606B2 JP31160199A JP31160199A JP3235606B2 JP 3235606 B2 JP3235606 B2 JP 3235606B2 JP 31160199 A JP31160199 A JP 31160199A JP 31160199 A JP31160199 A JP 31160199A JP 3235606 B2 JP3235606 B2 JP 3235606B2
- Authority
- JP
- Japan
- Prior art keywords
- lead frame
- width
- manufacturing
- groove
- frame material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05554—Shape in top view being square
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
Landscapes
- Punching Or Piercing (AREA)
- ing And Chemical Polishing (AREA)
- Lead Frames For Integrated Circuits (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体装置用のリード
フレーム及びその製造方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a lead frame for a semiconductor device and a method for manufacturing the same.
【０００２】[0002]
【従来の技術】半導体素子を搭載するダイパッドと、半
導体素子の電極を外部に取出すためのインナリードを備
えたリードフレームは、半導体装置に広く使用されてい
る。このようなリードフレームのダイパッドに搭載され
た半導体素子は、図１４に示すように、半導体素子２１
の電極２２と、各電極２２に対応したインナリード３と
がそれぞれワイヤ２３で接続されるが、最近では半導体
素子２１の電極２２が著しく増加しており、したがっ
て、電極２２のピッチも大へん狭くなっている（通常１
００〜１８０μｍ程度）。2. Description of the Related Art A lead frame provided with a die pad on which a semiconductor element is mounted and an inner lead for taking out an electrode of the semiconductor element to the outside is widely used in a semiconductor device. As shown in FIG. 14, the semiconductor element mounted on the die pad of such a lead frame is a semiconductor element 21.
The electrodes 22 and the inner leads 3 corresponding to the respective electrodes 22 are connected by wires 23, respectively. However, recently, the number of the electrodes 22 of the semiconductor element 21 has increased remarkably, and therefore, the pitch of the electrodes 22 is also very narrow. (Usually 1
About 00 to 180 μm).
【０００３】一方、リードフレームのインナリード３
は、例えばヨンニ・アロイからなるリードフレーム素材
をエッチング又はプレス加工により成形しており、図１
５に示すように、インナリード３の幅ｗは通常８０〜１
５０μｍ程度、厚さｔは１００〜３００μｍ程度で、ピ
ッチｐは通常１５０〜２５０μｍ程度、間隔ｇは通常７
０〜１７０μｍ程度である。On the other hand, inner leads 3 of a lead frame
Is formed by etching or pressing a lead frame material made of, for example, Yoni alloy.
As shown in FIG. 5, the width w of the inner lead 3 is usually 80 to 1
About 50 μm, thickness t is about 100 to 300 μm, pitch p is usually about 150 to 250 μm, and interval g is usually 7
It is about 0 to 170 μm.
【０００４】[0004]
【発明が解決しようとする課題】インナリード３の製造
にあたっては、リードフレーム素材の各インナリード３
の間隔（図１５のｇ）に相当する部分をエッチングによ
り除去し、又はプレス加工により打抜いているが、エッ
チングによる場合は、リードフレーム素材の板厚ｔが厚
いため時間がかかり、このため図１６に示すようにイン
ナリード３の両側面が大きく円弧状に除去されてつづみ
状に形成され、断面積が小さくなる。その結果、厚さ方
向の強度を確保することが困難で、ワイヤ２３をボンデ
イングする際つぶれたり変形したりすることがある。In manufacturing the inner lead 3, each inner lead 3 made of a lead frame material is used.
15 (g in FIG. 15) is removed by etching or punched out by press working. In the case of etching, however, it takes time because the plate thickness t of the lead frame material is large. As shown in FIG. 16, both side surfaces of the inner lead 3 are largely removed in an arc shape to form a continuous shape, and the cross-sectional area is reduced. As a result, it is difficult to secure the strength in the thickness direction, and the wire 23 may be crushed or deformed when bonding.
【０００５】また、プレス加工によりインナリード３を
形成する場合は、インナリード３の幅ｗに対して板厚ｔ
が大きいため、下ぬきプレスで上から打抜くと図１７に
示すようにインナリード３に下方が開くねじれが生じ、
上ぬきプレスで下から打抜くと図１８に示すように上方
が狭くなるねじれが生じる。このためワイヤ２３の全面
がインナリード３に接触しないことがあり、接続不良の
原因になっていた。When the inner lead 3 is formed by press working, the thickness w of the inner lead 3 is
When punching from above with a bottoming press, the inner lead 3 is twisted to open downward as shown in FIG.
When punching from below with an upper-side press, a twist occurs in which the upper part is narrowed as shown in FIG. For this reason, the entire surface of the wire 23 may not contact the inner lead 3, causing a connection failure.
【０００６】本発明は、上記の課題を解決するためにな
されたもので、所定の強度を確保し、しかも加工によっ
てねじれ等を生ずるおそれのないインナリードを備えた
リードフレーム及びその製造方法を得ることを目的とし
たものである。SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and provides a lead frame having an inner lead which ensures a predetermined strength and which is not likely to be twisted by processing, and a method of manufacturing the same. It is intended for that purpose.
【０００７】[0007]
【課題を解決するための手段】本発明のリードフレーム
の製造方法は、リードフレーム素材にホトリソグラフィ
ー技術によるエッチング加工を行って、前記リードフレ
ーム素材の除去すべき部位の途中まで溝を形成する第１
の工程と、前記第１の工程の後に残されたリードフレー
ム素材の除去すべき部位をプレス加工により除去する第
２の工程と、を有するリードフレームの製造方法であっ
て、前記溝の深さは、前記第２の工程によって除去する
リードフレーム素材の厚さに比して大であることを特徴
とする。According to a method of manufacturing a lead frame according to the present invention, a lead frame material is etched by photolithography to form a groove halfway through a portion of the lead frame material to be removed. 1
And a second step of removing a portion of the lead frame material left after the first step from which the lead frame material is to be removed by press working, wherein the depth of the groove is Is larger than the thickness of the lead frame material removed in the second step.
【０００８】また、本発明のリードフレームの製造方法
は、リードフレーム素材の厚さ方向において第１の方向
からホトリソグラフィー技術によるエッチング加工を行
って、前記リードフレーム素材の除去すべき部位の途中
まで溝を形成する第１の工程と、前記第１の工程の後に
残されたリードフレーム素材の除去すべき部位をプレス
加工により除去する第２の工程と、を有するリードフレ
ームの製造方法であって、前記第２の工程は、前記第１
の方向と同一の方向で行われることを特徴とする。Further, according to the method of manufacturing a lead frame of the present invention, the lead frame material is etched by photolithography from a first direction in the thickness direction of the lead frame material so that the lead frame material is removed halfway through a portion to be removed. A lead frame manufacturing method, comprising: a first step of forming a groove; and a second step of removing a portion of the lead frame material left after the first step to be removed by press working. , The second step comprises:
Is performed in the same direction as the direction.
【０００９】また、本発明のリードフレームは、上記い
ずれかに記載の製造方法によって製造されることを特徴
とする。さらに、本発明の半導体装置は、上記いずれか
に記載の製造方法によって製造されたリードフレーム
と、前記リードフレームに搭載される半導体素子と、を
有することを特徴とする。A lead frame according to the present invention is manufactured by any one of the manufacturing methods described above. Further, a semiconductor device according to the present invention includes a lead frame manufactured by any one of the manufacturing methods described above, and a semiconductor element mounted on the lead frame.
【００１０】[0010]
【実施例】図１〜図１３はそれぞれ本発明に係るリード
フレームの製造方法の実施例の説明図である。なお、以
下において、１はリードフレーム素材、２はレジスト、
３はインナリードで、それぞれ断面で示してある。1 to 13 are explanatory views of an embodiment of a method for manufacturing a lead frame according to the present invention. In the following, 1 is a lead frame material, 2 is a resist,
Reference numeral 3 denotes inner leads, each of which is shown in a cross section.
【００１１】図１の実施例は、先ず、リードフレーム素
材１の両面にレジスト２を塗布し、上面に開口部の幅が
インナリード３の間隔ｇにほぼ整合する大きさで、厚さ
ｔの２分の１より若干深い位置までホトリゾグラフィ技
術によりハーフエッチングして断面円弧状あるいは半楕
円状の溝４を形成する。ついで、この溝４にレジスト２
を塗布し、下面から溝４と同じ大きさで溝４に連続する
ようにエッチングして溝４ａを形成し、レジスト２を除
去する。In the embodiment shown in FIG. 1, first, a resist 2 is applied to both surfaces of a lead frame material 1, and the width of the opening is substantially matched to the gap g of the inner lead 3 on the upper surface, and the thickness t is Half-etching is performed by a photolithography technique to a position slightly deeper than half to form a groove 4 having an arc-shaped or semi-elliptical cross section. Next, the resist 2 is
Is applied and etched from the lower surface so as to be continuous with the groove 4 in the same size as the groove 4 to form a groove 4a, and the resist 2 is removed.
【００１２】このような作業をインナリード３の幅ｗを
隔てて同時に行なうことによりリードフレーム素材１に
多数のスリットが設けられ、両側面の中央部が僅かに側
方に突出し、その幅が所定の幅ｗとほぼ等しい断面形状
のインナリード３ａが得られる。By performing such an operation at the same time across the width w of the inner lead 3, a large number of slits are provided in the lead frame material 1, and the central portions of both side surfaces slightly project sideways, and the width is predetermined. Of the inner lead 3a having a cross section substantially equal to the width w of the inner lead.
【００１３】図２の実施例は、製造工程は図１の実施例
の場合と同様であるが、本実施例においては、両面にレ
ジスト２が塗布されたリードフレーム素材１の上面に、
厚さｔのほぼ３分の２に達する溝５をハーフエッチング
により形成すると共に、下面から断面形状が溝５より小
さく、かつ溝５に連続する溝５ａをハーフエッチングに
より形成したもので、これにより両側面の下方が僅かに
両側に突出し、上面の幅が所定の幅ｗとほぼ等しく、下
面の幅がこれより僅かに広い断面形状のインナリード３
ｂを得ることができる。The manufacturing process of the embodiment of FIG. 2 is the same as that of the embodiment of FIG. 1. However, in this embodiment, the upper surface of the lead frame material 1 coated with the resist 2 on both sides is
A groove 5 reaching approximately two thirds of the thickness t is formed by half-etching, and a groove 5a having a cross-sectional shape smaller than the groove 5 from the lower surface and continuous to the groove 5 is formed by half-etching. An inner lead 3 having a cross-sectional shape in which the lower portion of both side surfaces slightly protrudes to both sides, the width of the upper surface is substantially equal to the predetermined width w, and the width of the lower surface is slightly wider than this.
b can be obtained.
【００１４】図３の実施例は図２の実施例と反対に、ハ
ーフエッチングにより上面には小さい溝６を、また下面
にはこの溝６と連続する大きい溝６ａを形成したもの
で、両側面の上方が僅かに両側に突出し、下面の幅が所
定の幅ｗとほぼ等しく、上面の幅がこれより僅かに広い
断面形状のインナリード３ｃが得られる。The embodiment of FIG. 3 is different from the embodiment of FIG. 2 in that a small groove 6 is formed on the upper surface by half etching and a large groove 6a continuous with the groove 6 is formed on the lower surface. Is slightly protruded to both sides, and the inner lead 3c having a cross-sectional shape whose width of the lower surface is substantially equal to the predetermined width w and whose width of the upper surface is slightly wider than this is obtained.
【００１５】図４，図５の実施例は、先ず、図１の実施
例と同様に、開口部の幅がインナリード３の間隔ｇとほ
ぼ等しく、深さが厚さｔのほぼ２分の１に達する溝７を
ハーフエッチングにより形成する。そして、図４の実施
例においては、溝７の開口部の幅より狭い幅のポンチを
用い、プレスにより上方から溝７の底部を打抜いてスリ
ット７ａを形成したものであり、図５の実施例は下方か
ら溝７の底部に向ってポンチで打抜き、スリット７ａを
形成したものである。これにより、いずれも上面の幅が
所定の幅ｗとほぼ等しく、下面の幅がこれより僅かに広
い断面形状のインナリード３ｄ，３ｅが得られる。In the embodiment of FIGS. 4 and 5, first, similarly to the embodiment of FIG. 1, the width of the opening is substantially equal to the distance g between the inner leads 3, and the depth is substantially half the thickness t. A groove 7 reaching 1 is formed by half etching. In the embodiment of FIG. 4, a punch having a width smaller than the width of the opening of the groove 7 is used, and the bottom of the groove 7 is punched from above by pressing to form a slit 7a. In the example, a slit 7a is formed by punching from the bottom toward the bottom of the groove 7 with a punch. As a result, the inner leads 3d and 3e each having the upper surface width substantially equal to the predetermined width w and the lower surface width slightly larger than this are obtained.
【００１６】図６，図７の実施例は、図４，図５の実施
例とほぼ同じであるが、上面に、開口部の幅がインナリ
ード３の間隔ｇより広い溝８をリードフレーム素材１の
厚さｔのほぼ３分の２の深さにハーフエッチングで形成
する。そして、図６の実施例は上記インナード３の間隔
ｇより狭い幅のポンチで、プレスにより上方から溝８の
底部を打抜いてスリット８ａを形成したものであり、図
７の実施例は同じポンチにより下方から溝８の底部に向
って打抜き、スリット８ａを形成したものである。The embodiment shown in FIGS. 6 and 7 is substantially the same as the embodiment shown in FIGS. 4 and 5, except that a groove 8 whose opening is wider than the gap g between the inner leads 3 is formed on the upper surface. It is formed by half-etching to a depth of about two thirds of the thickness t. The embodiment shown in FIG. 6 is a punch having a width smaller than the interval g of the inner yard 3 and the bottom of the groove 8 is punched from above by pressing to form a slit 8a. The embodiment shown in FIG. The slit 8a is formed by punching the bottom of the groove 8 from below with a punch.
【００１７】図６，図７の実施例によれば、いずれも上
面の幅が所定の幅ｗよりやや狭く、下面の幅が所定の幅
ｗよりやや広いほぼ凸字状の断面形状で、断面積が所定
の断面積とほぼ等しいインナリード３ｆ，３ｇが得られ
る。According to the embodiments shown in FIGS. 6 and 7, the width of the upper surface is slightly narrower than the predetermined width w, and the width of the lower surface is slightly larger than the predetermined width w. Inner leads 3f and 3g whose areas are substantially equal to the predetermined cross-sectional area are obtained.
【００１８】図８の実施例は、レジスト２が塗布された
リードフレーム素材１の両面から、開口部の幅がインナ
リード３の間隔ｇとほぼ等しい溝９，９ａを、厚さｔの
それぞれ３分の１程度にハーフエッチングし、両溝９，
９ａの間をその開口部の幅より狭い幅のポンチで打抜い
てスリット９ｂを形成したもので、上下面の幅が所定の
幅ｗとほぼ等しく、両側面の中央部が外側に僅かに突出
した断面形状のインナリード３ｈが得られる。In the embodiment shown in FIG. 8, grooves 9 and 9a each having an opening width substantially equal to the interval g of the inner lead 3 are formed on both sides of the lead frame material 1 on which the resist 2 has been applied. Half-etch to about 1 /
A slit 9b is formed by punching a space between the openings 9a with a punch having a width smaller than the width of the opening. The width of the upper and lower surfaces is almost equal to a predetermined width w, and the center portions of both side surfaces slightly project outward. The inner lead 3h having the defined cross-sectional shape is obtained.
【００１９】また、図９，図１０の実施例は、リードフ
レーム素材１の上面に、開口部の幅がインナリード３の
間隔より広く、深さが厚さｔの２分の１程度の溝１０を
ハーフエッチングで形成すると共に、下面に溝１０より
狭い幅及び深さの溝１０ａをハーフエッチングで形成す
る。そして、図９の実施例では両溝１０，１０ａの間を
溝１０ａの開口部の幅より狭い幅のポンチで下から打抜
いてスリット１０ｂを形成し、図１０の実施例では同じ
ポンチで上から打抜いてスリット１０ｂを形成したもの
である。9 and 10, a groove having a width of an opening wider than the interval between the inner leads 3 and a depth of about one half of the thickness t is formed on the upper surface of the lead frame material 1. FIG. 10 is formed by half etching, and a groove 10a having a width and a depth smaller than that of the groove 10 is formed on the lower surface by half etching. In the embodiment shown in FIG. 9, a slit 10b is formed by punching the space between the grooves 10 and 10a from below with a punch having a width smaller than the width of the opening of the groove 10a. In the embodiment shown in FIG. From which a slit 10b is formed.
【００２０】いずれの場合も、上面の幅が所定の幅ｗよ
り僅かに狭く、下面の幅が所定の幅ｗより僅かに広く両
側面が僅かに突出した断面形状で、断面積が所定の断面
積とほぼ等しいインナリード３ｉ，３ｊが得られる。In each case, the width of the upper surface is slightly smaller than the predetermined width w, the width of the lower surface is slightly larger than the predetermined width w, and both side surfaces are slightly projecting, and the cross-sectional area is a predetermined width. Inner leads 3i and 3j having approximately the same area are obtained.
【００２１】図１１の実施例は、最初にリードフレーム
素材１の上面からインナリード３の間隔ｇとほぼ等しい
幅のポンチにより、厚さｔのほぼ２分の１の深さの溝１
１をプレス加工により形成する。ついで、同じ形状のポ
ンチにより溝１１の底部を下方から打抜いてスリット１
１ａを形成したもので、上下面の幅が所定の幅ｗとほぼ
等しく、断面形状が長方形のインナリード３ｋが得られ
る。なお、ポンチにより溝１１の底部を上方から打抜い
てもよい。In the embodiment shown in FIG. 11, a groove 1 having a depth almost half the thickness t is first formed by a punch having a width substantially equal to the distance g between the inner lead 3 and the upper surface of the lead frame material 1.
1 is formed by press working. Then, the bottom of the groove 11 is punched from below with a punch
The inner lead 3k having the rectangular shape in cross section is obtained in which the width of the upper and lower surfaces is substantially equal to the predetermined width w. The bottom of the groove 11 may be punched from above by a punch.
【００２２】図１２，図１３の実施例は、リードフレー
ム素材１の上面からプレス加工により溝１１を形成する
までの工程は図１１の実施例と同じであるが、図１２の
実施例は溝１１の底部を溝１１より狭い幅のポンチによ
り上方から打抜いてスリット１１ｂを形成したもの、図
１３の実施例はこれより若干幅の広いポンチで下方から
打抜いてスリット１１ｂを形成したもので、いずれも上
面の幅が所定の幅ｗとほぼ等しく、下面の幅がこれより
若干広い断面形状のインナリード３ｍ，３ｎを得ること
ができる。12 and 13 are the same as the embodiment of FIG. 11 until the groove 11 is formed from the upper surface of the lead frame material 1 by pressing, but the embodiment of FIG. The slit 11b is formed by punching the bottom of 11 from above with a punch having a width smaller than that of the groove 11, and the embodiment of FIG. 13 is formed by punching from below with a punch slightly wider than this to form the slit 11b. In each case, the inner leads 3m and 3n having a sectional shape in which the width of the upper surface is substantially equal to the predetermined width w and the width of the lower surface is slightly wider than this can be obtained.
【００２３】以上詳述したように、本発明はリードフレ
ーム素材を２回又はそれ以上のエッチング若しくはプレ
ス加工又はエッチングとプレス加工との組合せにより加
工してインナリードを製造することを特徴とするもの
で、これにより所定の幅及び断面積とほぼ等しい幅及び
断面積を有するインナリードを得ることができる。As described in detail above, the present invention is characterized in that a lead frame material is processed by etching or pressing twice or more or a combination of etching and pressing to produce an inner lead. Thus, an inner lead having a width and a cross-sectional area substantially equal to a predetermined width and a cross-sectional area can be obtained.
【００２４】なお、図１〜図１３により本発明の各種の
実施例について説明したが、本発明はこれに限定するも
のではなく、例えば図４〜図１０のスリット７ａ，８
ａ，９ｂ，１０ｂをエッチングで形成するなど、エッチ
ング若しくはプレス加工又はこれらを適宜組合せること
により、所望のインナリードを製造することができる。Although various embodiments of the present invention have been described with reference to FIGS. 1 to 13, the present invention is not limited to these embodiments. For example, the slits 7a and 8 shown in FIGS.
A desired inner lead can be manufactured by etching or pressing, or by appropriately combining them, such as forming a, 9b, and 10b by etching.
【００２５】[0025]
【発明の効果】以上の発明から明らかなように、本発明
は、インナリードを２回又はそれ以上のエッチング若し
くはプレス加工又はこれらの組合せにより形成して所定
の幅及び断面積が得られるようにしたので、厚さ方向の
強度を確保することができ、したがってワイヤをボンデ
イングする際に、つぶれたり変形したりすることのない
リードフレームを得ることができる。As is apparent from the above invention, the present invention provides an inner lead formed by etching or pressing twice or more or a combination thereof to obtain a predetermined width and cross-sectional area. As a result, the strength in the thickness direction can be ensured, and therefore, a lead frame that does not collapse or deform when bonding the wire can be obtained.
【００２６】また、インナリードの加工に際してインナ
リードがねじれたり変形したりすることがないので、ワ
イヤを確実に接続することができ、接続不良などを生ず
るおそれがない。Further, since the inner lead is not twisted or deformed during the processing of the inner lead, the wires can be securely connected, and there is no possibility that a connection failure or the like occurs.
【図１】本発明に係るリードフレームの製造方法の実施
例の説明図である。FIG. 1 is an explanatory view of an embodiment of a method for manufacturing a lead frame according to the present invention.
【図２】本発明に係るリードフレームの製造方法の他の
実施例の説明図である。FIG. 2 is an explanatory view of another embodiment of the method for manufacturing a lead frame according to the present invention.
【図３】本発明に係るリードフレームの製造方法の他の
実施例の説明図である。FIG. 3 is an explanatory view of another embodiment of the method for manufacturing a lead frame according to the present invention.
【図４】本発明に係るリードフレームの製造方法の他の
実施例の説明図である。FIG. 4 is an explanatory view of another embodiment of the method for manufacturing a lead frame according to the present invention.
【図５】本発明に係るリードフレームの製造方法の他の
実施例の説明図である。FIG. 5 is an explanatory view of another embodiment of the method for manufacturing a lead frame according to the present invention.
【図６】本発明に係るリードフレームの製造方法の他の
実施例の説明図である。FIG. 6 is an explanatory view of another embodiment of the method for manufacturing a lead frame according to the present invention.
【図７】本発明に係るリードフレームの製造方法の他の
実施例の説明図である。FIG. 7 is an explanatory view of another embodiment of the method for manufacturing a lead frame according to the present invention.
【図８】本発明に係るリードフレームの製造方法の他の
実施例の説明図である。FIG. 8 is an explanatory diagram of another embodiment of the method for manufacturing a lead frame according to the present invention.
【図９】本発明に係るリードフレームの製造方法の他の
実施例の説明図である。FIG. 9 is an explanatory view of another embodiment of the method for manufacturing a lead frame according to the present invention.
【図１０】本発明に係るリードフレームの製造方法の他
の実施例の説明図である。FIG. 10 is an explanatory diagram of another embodiment of the method for manufacturing a lead frame according to the present invention.
【図１１】本発明に係るリードフレームの製造方法の他
の実施例の説明図である。FIG. 11 is an explanatory view of another embodiment of the method for manufacturing a lead frame according to the present invention.
【図１２】本発明に係るリードフレームの製造方法の他
の実施例の説明図である。FIG. 12 is an explanatory view of another embodiment of the method for manufacturing a lead frame according to the present invention.
【図１３】本発明に係るリードフレームの製造方法の他
の実施例の説明図である。FIG. 13 is an explanatory diagram of another embodiment of the method for manufacturing a lead frame according to the present invention.
【図１４】半導体素子とインナリードとの接続状態を示
す模式図である。FIG. 14 is a schematic diagram showing a connection state between a semiconductor element and an inner lead.
【図１５】インナリードの寸法を説明するための模式図
である。FIG. 15 is a schematic diagram for explaining dimensions of inner leads.
【図１６】エッチングにより製造した従来のインナリー
ドの断面図である。FIG. 16 is a cross-sectional view of a conventional inner lead manufactured by etching.
【図１７】プレス加工により製造した従来のインナリー
ドの断面図である。FIG. 17 is a cross-sectional view of a conventional inner lead manufactured by press working.
【図１８】プレス加工により製造した従来のインナリー
ドの断面図である。FIG. 18 is a cross-sectional view of a conventional inner lead manufactured by press working.
１ リードフレーム素材 ２ レジスト ３〜３ｎ インナリード 1 Lead frame material 2 Resist 3 ~ 3n Inner lead
Claims (4)
ー技術によるエッチング加工を行って、前記リードフレ
ーム素材の除去すべき部位の途中まで溝を形成する第１
の工程と、 前記第１の工程の後に残されたリードフレーム素材の除
去すべき部位をプレス加工により除去する第２の工程
と、を有するリードフレームの製造方法であって、 前記溝の深さは、前記第２の工程によって除去するリー
ドフレーム素材の厚さに比して大であることを特徴とす
るリードフレームの製造方法。An etching process is performed on a lead frame material by a photolithography technique to form a groove halfway in a portion of the lead frame material to be removed.
And a second step of removing, by press working, a portion of the lead frame material left after the first step to be removed, the method comprising: Is larger than the thickness of the lead frame material removed in the second step.
第１の方向からホトリソグラフィー技術によるエッチン
グ加工を行って、前記リードフレーム素材の除去すべき
部位の途中まで溝を形成する第１の工程と、 前記第１の工程の後に残されたリードフレーム素材の除
去すべき部位をプレス加工により除去する第２の工程
と、を有するリードフレームの製造方法であって、 前記第２の工程は、前記第１の方向と同一の方向で行わ
れることを特徴とするリードフレームの製造方法。A first step of performing etching by a photolithography technique from a first direction in a thickness direction of the lead frame material to form a groove halfway in a portion of the lead frame material to be removed; A second step of removing, by press working, a portion of the lead frame material left after the first step to be removed, wherein the second step comprises: A method for manufacturing a lead frame, wherein the method is performed in the same direction as the first direction.
って製造されることを特徴とするリードフレーム。3. A lead frame manufactured by the manufacturing method according to claim 1.
記リードフレームに搭載される半導体素子と、を有する
ことを特徴とする半導体装置。4. A semiconductor device comprising: the lead frame according to claim 3; and a semiconductor element mounted on the lead frame.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31160199A JP3235606B2 (en) | 1999-11-01 | 1999-11-01 | Lead frame, method of manufacturing the same, and semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31160199A JP3235606B2 (en) | 1999-11-01 | 1999-11-01 | Lead frame, method of manufacturing the same, and semiconductor device |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3071132A Division JP3018542B2 (en) | 1991-04-03 | 1991-04-03 | Lead frame and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000124376A JP2000124376A (en) | 2000-04-28 |
| JP3235606B2 true JP3235606B2 (en) | 2001-12-04 |
Family
ID=18019223
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31160199A Expired - Fee Related JP3235606B2 (en) | 1999-11-01 | 1999-11-01 | Lead frame, method of manufacturing the same, and semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3235606B2 (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100983303B1 (en) | 2003-05-03 | 2010-09-20 | 삼성테크윈 주식회사 | Lead Frame and Manufacturing Method Thereof |
| JP2006123308A (en) * | 2004-10-28 | 2006-05-18 | Brother Ind Ltd | Layered structure of sheet-shape part and its manufacturing method |
| JP5120839B2 (en) * | 2007-08-27 | 2013-01-16 | 国立大学法人九州工業大学 | Fine hole machining method |
| KR100975977B1 (en) | 2008-03-25 | 2010-08-13 | 엘지이노텍 주식회사 | Structure and manufacture method for lead frame of multi-row type |
| JP5678727B2 (en) | 2011-03-03 | 2015-03-04 | セイコーエプソン株式会社 | Vibration device, method for manufacturing vibration device, electronic apparatus |
| JP2013239740A (en) * | 2013-08-02 | 2013-11-28 | Rohm Co Ltd | Semiconductor device |
| DE102016201433A1 (en) * | 2016-02-01 | 2017-08-03 | Bayerische Motoren Werke Aktiengesellschaft | Method for processing and / or producing a component |
-
1999
- 1999-11-01 JP JP31160199A patent/JP3235606B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2000124376A (en) | 2000-04-28 |
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